WO2006127327A3 - A resonance method for production of intense low-impurity ion beams of atoms and molecules - Google Patents

A resonance method for production of intense low-impurity ion beams of atoms and molecules Download PDF

Info

Publication number
WO2006127327A3
WO2006127327A3 PCT/US2006/018847 US2006018847W WO2006127327A3 WO 2006127327 A3 WO2006127327 A3 WO 2006127327A3 US 2006018847 W US2006018847 W US 2006018847W WO 2006127327 A3 WO2006127327 A3 WO 2006127327A3
Authority
WO
WIPO (PCT)
Prior art keywords
ionization
production
molecules
resonant
atoms
Prior art date
Application number
PCT/US2006/018847
Other languages
French (fr)
Other versions
WO2006127327A2 (en
Inventor
Kenneth H Purser
Albert E Litherland
Norman L Turner
Original Assignee
Kenneth H Purser
Albert E Litherland
Norman L Turner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/185,141 external-priority patent/US7365340B2/en
Application filed by Kenneth H Purser, Albert E Litherland, Norman L Turner filed Critical Kenneth H Purser
Priority to CN2006800174740A priority Critical patent/CN101292139B/en
Priority to KR1020077018174A priority patent/KR101246186B1/en
Priority to JP2008512429A priority patent/JP5420239B2/en
Publication of WO2006127327A2 publication Critical patent/WO2006127327A2/en
Publication of WO2006127327A3 publication Critical patent/WO2006127327A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/24—Ion sources; Ion guns using photo-ionisation, e.g. using laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation

Abstract

The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non- resonant processes are exploited to enhance or attenuate particular charge- changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields. An example having commercial importance is ionization of the decaborane molecule, B10H14 where an almost perfect ionization resonance match occurs between decaborane molecules and arsenic atoms.
PCT/US2006/018847 2005-05-20 2006-05-16 A resonance method for production of intense low-impurity ion beams of atoms and molecules WO2006127327A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2006800174740A CN101292139B (en) 2005-05-20 2006-05-16 A resonance method for production of intense low-impurity ion beams of atoms and molecules
KR1020077018174A KR101246186B1 (en) 2005-05-20 2006-05-16 A resonance method for production of intense low-impurity ion beams of atoms and molecules
JP2008512429A JP5420239B2 (en) 2005-05-20 2006-05-16 Resonance method for the production of atomic and molecular low-impurity strong ion beams.

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US68301605P 2005-05-20 2005-05-20
US60/683,016 2005-05-20
US11/185,141 2005-07-20
US11/185,141 US7365340B2 (en) 2005-07-20 2005-07-20 Resonance method for production of intense low-impurity ion beams of atoms and molecules

Publications (2)

Publication Number Publication Date
WO2006127327A2 WO2006127327A2 (en) 2006-11-30
WO2006127327A3 true WO2006127327A3 (en) 2007-11-29

Family

ID=37452588

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/018847 WO2006127327A2 (en) 2005-05-20 2006-05-16 A resonance method for production of intense low-impurity ion beams of atoms and molecules

Country Status (4)

Country Link
JP (1) JP5420239B2 (en)
KR (1) KR101246186B1 (en)
CN (1) CN101292139B (en)
WO (1) WO2006127327A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102549812B (en) 2009-10-02 2016-05-18 丰田自动车株式会社 Lithium secondary battery and this positive electrode for battery
CN101963596B (en) * 2010-09-01 2012-09-05 中国科学院广州地球化学研究所 Rare gas determination system based on quadrupole mass spectrometer
GB2484488B (en) * 2010-10-12 2013-04-17 Vg Systems Ltd Improvements in and relating to ion guns
EP3510621B1 (en) * 2016-09-07 2020-06-03 Forschungszentrum Jülich GmbH Tuneable charged particle vortex beam generator and method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395302A (en) * 1966-01-10 1968-07-30 High Voltage Engineering Corp Vapor target for particle accelerators
US4037100A (en) * 1976-03-01 1977-07-19 General Ionex Corporation Ultra-sensitive spectrometer for making mass and elemental analyses
US4486665A (en) * 1982-08-06 1984-12-04 The United States Of America As Represented By The United States Department Of Energy Negative ion source
US20020003208A1 (en) * 1997-12-01 2002-01-10 Vadim G. Dudnikov Space charge neutralization of an ion beam
US6452338B1 (en) * 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US6573510B1 (en) * 1999-06-18 2003-06-03 The Regents Of The University Of California Charge exchange molecular ion source
US6686595B2 (en) * 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
US20040119025A1 (en) * 2002-09-27 2004-06-24 Klepper C. Christopher Boron ion delivery system
US20050051096A1 (en) * 1999-12-13 2005-03-10 Semequip, Inc. Ion implantation ion source, system and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817374A (en) * 1994-06-28 1996-01-19 Shimadzu Corp Negative ion gun
JPH0817376A (en) * 1994-07-01 1996-01-19 Mitsubishi Electric Corp Ion source and ion implanter
JP3156627B2 (en) * 1997-03-14 2001-04-16 日本電気株式会社 Negative ion source
EP1347804A4 (en) * 2000-11-30 2009-04-22 Semequip Inc Ion implantation system and control method
JP2003257357A (en) * 2002-03-01 2003-09-12 Nissin Electric Co Ltd Particle injection device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395302A (en) * 1966-01-10 1968-07-30 High Voltage Engineering Corp Vapor target for particle accelerators
US4037100A (en) * 1976-03-01 1977-07-19 General Ionex Corporation Ultra-sensitive spectrometer for making mass and elemental analyses
US4486665A (en) * 1982-08-06 1984-12-04 The United States Of America As Represented By The United States Department Of Energy Negative ion source
US20020003208A1 (en) * 1997-12-01 2002-01-10 Vadim G. Dudnikov Space charge neutralization of an ion beam
US6573510B1 (en) * 1999-06-18 2003-06-03 The Regents Of The University Of California Charge exchange molecular ion source
US6452338B1 (en) * 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US20050051096A1 (en) * 1999-12-13 2005-03-10 Semequip, Inc. Ion implantation ion source, system and method
US6686595B2 (en) * 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
US20040119025A1 (en) * 2002-09-27 2004-06-24 Klepper C. Christopher Boron ion delivery system

Also Published As

Publication number Publication date
CN101292139B (en) 2013-04-24
JP5420239B2 (en) 2014-02-19
WO2006127327A2 (en) 2006-11-30
JP2008541406A (en) 2008-11-20
KR101246186B1 (en) 2013-03-21
CN101292139A (en) 2008-10-22
KR20080016524A (en) 2008-02-21

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