WO2006115592A8 - Anti-stiction technique for electromechanical systems and electromechanical device employing same - Google Patents

Anti-stiction technique for electromechanical systems and electromechanical device employing same

Info

Publication number
WO2006115592A8
WO2006115592A8 PCT/US2006/008600 US2006008600W WO2006115592A8 WO 2006115592 A8 WO2006115592 A8 WO 2006115592A8 US 2006008600 W US2006008600 W US 2006008600W WO 2006115592 A8 WO2006115592 A8 WO 2006115592A8
Authority
WO
WIPO (PCT)
Prior art keywords
stiction
channel
electromechanical
stiction channel
seal
Prior art date
Application number
PCT/US2006/008600
Other languages
French (fr)
Other versions
WO2006115592A1 (en
Inventor
Markus Ulm
Matthias Metz
Brian Stark
Gary Yama
Markus Lutz
Aaron Partridge
Wilhelm Frey
Original Assignee
Bosch Gmbh Robert
Markus Ulm
Matthias Metz
Brian Stark
Gary Yama
Markus Lutz
Aaron Partridge
Wilhelm Frey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert, Markus Ulm, Matthias Metz, Brian Stark, Gary Yama, Markus Lutz, Aaron Partridge, Wilhelm Frey filed Critical Bosch Gmbh Robert
Publication of WO2006115592A1 publication Critical patent/WO2006115592A1/en
Publication of WO2006115592A8 publication Critical patent/WO2006115592A8/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0096—For avoiding stiction when the device is in use, i.e. after manufacture has been completed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/0005—Anti-stiction coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/11—Treatments for avoiding stiction of elastic or moving parts of MEMS
    • B81C2201/112—Depositing an anti-stiction or passivation coating, e.g. on the elastic or moving parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

Abstract

A mechanical structure is disposed in a chamber, at least a portion of which is defined by the encapsulation structure. A first method provides a channel cap having at least one preform portion disposed over or in at least a portion of an anti-stiction channel to seal the anti-stiction channel, at least in part. A second method provides a channel cap having at least one portion disposed over or in at least a portion of an anti-stiction channel to seal the anti-stiction channel, at least in part. The at least one portion is fabricated apart from the electromechanical device and thereafter affixed to the electromechanical device. A third method provides a channel cap having at least one portion disposed over or in at least a portion of the anti-stiction channel to seal an anti-stiction channel, at least in part. The at least one portion may comprise a wire ball, a stud, metal foil or a solder preform. A device includes a substrate, an encapsulation structure and a mechanical structure. An anti-stiction layer is disposed on at least a portion of the mechanical structure. An anti-stiction channel is formed in at least one of the substrate and the encapsulation structure. A cap has at least one preform portion disposed over or in at least a portion of the anti-stiction channel to seal the anti-stiction channel, at least in part.
PCT/US2006/008600 2005-04-27 2006-03-10 Anti-stiction technique for electromechanical systems and electromechanical device employing same WO2006115592A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/115,828 2005-04-27
US11/115,828 US7449355B2 (en) 2005-04-27 2005-04-27 Anti-stiction technique for electromechanical systems and electromechanical device employing same

Publications (2)

Publication Number Publication Date
WO2006115592A1 WO2006115592A1 (en) 2006-11-02
WO2006115592A8 true WO2006115592A8 (en) 2007-11-01

Family

ID=36940493

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/008600 WO2006115592A1 (en) 2005-04-27 2006-03-10 Anti-stiction technique for electromechanical systems and electromechanical device employing same

Country Status (2)

Country Link
US (2) US7449355B2 (en)
WO (1) WO2006115592A1 (en)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050250253A1 (en) * 2002-10-23 2005-11-10 Cheung Kin P Processes for hermetically packaging wafer level microscopic structures
US7449355B2 (en) * 2005-04-27 2008-11-11 Robert Bosch Gmbh Anti-stiction technique for electromechanical systems and electromechanical device employing same
US20070170528A1 (en) 2006-01-20 2007-07-26 Aaron Partridge Wafer encapsulated microelectromechanical structure and method of manufacturing same
KR100750741B1 (en) * 2006-09-15 2007-08-22 삼성전기주식회사 Cap wafer, semicondoctor chip having the same, and fabrication method thereof
US20080248613A1 (en) * 2006-09-27 2008-10-09 Dongmin Chen Method of Forming a Micromechanical Device with Microfluidic Lubricant Channel
US7932569B2 (en) * 2006-09-27 2011-04-26 Miradia, Inc. Micromechanical device with microfluidic lubricant channel
US7671515B2 (en) * 2006-11-07 2010-03-02 Robert Bosch, Gmbh Microelectromechanical devices and fabrication methods
US20080119002A1 (en) * 2006-11-17 2008-05-22 Charles Grosjean Substrate contact for a MEMS device
KR100865911B1 (en) * 2007-02-05 2008-10-29 성균관대학교산학협력단 Fabricating method of Microstructures
US7544531B1 (en) * 2007-03-13 2009-06-09 Sitime Inc. Ground strap for suppressing stiction during MEMS fabrication
US7968986B2 (en) * 2007-05-07 2011-06-28 Innovative Micro Technology Lid structure for microdevice and method of manufacture
US20080290494A1 (en) * 2007-05-21 2008-11-27 Markus Lutz Backside release and/or encapsulation of microelectromechanical structures and method of manufacturing same
KR101349373B1 (en) * 2007-07-31 2014-01-10 삼성전자주식회사 Semiconductor device and method of manufacturing a semiconductor device
US20090134481A1 (en) * 2007-11-28 2009-05-28 Analog Devices, Inc. Molded Sensor Package and Assembly Method
US8044755B2 (en) * 2008-04-09 2011-10-25 National Semiconductor Corporation MEMS power inductor
US7705411B2 (en) * 2008-04-09 2010-04-27 National Semiconductor Corporation MEMS-topped integrated circuit with a stress relief layer
JP5374077B2 (en) 2008-06-16 2013-12-25 ローム株式会社 MEMS sensor
US8011242B2 (en) * 2008-07-29 2011-09-06 Garmin Switzerland Gmbh System and device for measuring and analyzing forces applied by a cyclist on a pedal of a bicycle
JP2010098518A (en) * 2008-10-16 2010-04-30 Rohm Co Ltd Method of manufacturing mems sensor, and mems sensor
US7875482B2 (en) * 2009-03-19 2011-01-25 Robert Bosch Gmbh Substrate with multiple encapsulated pressures
WO2010111601A2 (en) 2009-03-26 2010-09-30 Semprius, Inc. Methods of forming printable integrated circuit devices and devices formed thereby
US8710599B2 (en) * 2009-08-04 2014-04-29 Fairchild Semiconductor Corporation Micromachined devices and fabricating the same
JP5640379B2 (en) 2009-12-28 2014-12-17 ソニー株式会社 Manufacturing method of semiconductor device
US8343789B2 (en) 2010-08-17 2013-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Microstructure device with an improved anchor
WO2012037538A2 (en) 2010-09-18 2012-03-22 Fairchild Semiconductor Corporation Micromachined monolithic 6-axis inertial sensor
US9278845B2 (en) 2010-09-18 2016-03-08 Fairchild Semiconductor Corporation MEMS multi-axis gyroscope Z-axis electrode structure
KR20130052652A (en) 2010-09-18 2013-05-22 페어차일드 세미컨덕터 코포레이션 Sealed packaging for microelectromechanical systems
WO2012037501A2 (en) 2010-09-18 2012-03-22 Cenk Acar Flexure bearing to reduce quadrature for resonating micromachined devices
EP2616772B1 (en) 2010-09-18 2016-06-22 Fairchild Semiconductor Corporation Micromachined monolithic 3-axis gyroscope with single drive
KR101871865B1 (en) 2010-09-18 2018-08-02 페어차일드 세미컨덕터 코포레이션 Multi-die mems package
US9006846B2 (en) 2010-09-20 2015-04-14 Fairchild Semiconductor Corporation Through silicon via with reduced shunt capacitance
CN103221795B (en) 2010-09-20 2015-03-11 快捷半导体公司 Microelectromechanical pressure sensor including reference capacitor
JP5419923B2 (en) * 2011-05-09 2014-02-19 三菱電機株式会社 Sensor element
JP5541306B2 (en) 2011-05-27 2014-07-09 株式会社デンソー Mechanical quantity sensor device and manufacturing method thereof
US8779533B2 (en) 2011-07-12 2014-07-15 Robert Bosch Gmbh MEMS with single use valve and method of operation
US9062972B2 (en) 2012-01-31 2015-06-23 Fairchild Semiconductor Corporation MEMS multi-axis accelerometer electrode structure
US9466532B2 (en) 2012-01-31 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same
US8978475B2 (en) 2012-02-01 2015-03-17 Fairchild Semiconductor Corporation MEMS proof mass with split z-axis portions
US8716852B2 (en) * 2012-02-17 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Micro-electro mechanical systems (MEMS) having outgasing prevention structures and methods of forming the same
US9174837B2 (en) 2012-03-30 2015-11-03 Analog Devices, Inc. System and method for detecting surface charges of a MEMS device
US8754694B2 (en) 2012-04-03 2014-06-17 Fairchild Semiconductor Corporation Accurate ninety-degree phase shifter
US9488693B2 (en) 2012-04-04 2016-11-08 Fairchild Semiconductor Corporation Self test of MEMS accelerometer with ASICS integrated capacitors
US8742964B2 (en) 2012-04-04 2014-06-03 Fairchild Semiconductor Corporation Noise reduction method with chopping for a merged MEMS accelerometer sensor
KR102058489B1 (en) 2012-04-05 2019-12-23 페어차일드 세미컨덕터 코포레이션 Mems device front-end charge amplifier
US9069006B2 (en) 2012-04-05 2015-06-30 Fairchild Semiconductor Corporation Self test of MEMS gyroscope with ASICs integrated capacitors
EP2647955B8 (en) 2012-04-05 2018-12-19 Fairchild Semiconductor Corporation MEMS device quadrature phase shift cancellation
EP2647952B1 (en) 2012-04-05 2017-11-15 Fairchild Semiconductor Corporation Mems device automatic-gain control loop for mechanical amplitude drive
US9625272B2 (en) 2012-04-12 2017-04-18 Fairchild Semiconductor Corporation MEMS quadrature cancellation and signal demodulation
US9094027B2 (en) 2012-04-12 2015-07-28 Fairchild Semiconductor Corporation Micro-electro-mechanical-system (MEMS) driver
US9029179B2 (en) 2012-06-28 2015-05-12 Analog Devices, Inc. MEMS device with improved charge elimination and methods of producing same
US9556016B2 (en) * 2012-08-20 2017-01-31 Robert Bosch Gmbh Capacitive MEMS sensor and method
DE102013014881B4 (en) 2012-09-12 2023-05-04 Fairchild Semiconductor Corporation Enhanced silicon via with multi-material fill
JP6095308B2 (en) * 2012-09-25 2017-03-15 株式会社東芝 Semiconductor device and manufacturing method thereof
FR2999335B1 (en) * 2012-12-06 2016-03-11 Commissariat Energie Atomique IMPROVED METHOD FOR PRODUCING A SUSPENDED STRUCTURE COMPONENT AND A CO-INTEGRATED TRANSISTOR ON THE SAME SUBSTRATE
US9041213B2 (en) * 2013-03-14 2015-05-26 Freescale Semiconductor Inc. Microelectromechanical system devices having through substrate vias and methods for the fabrication thereof
DE102013007593B4 (en) * 2013-05-02 2022-12-29 Northrop Grumman Litef Gmbh ACCELERATION SENSOR AND METHOD FOR MANUFACTURING ACCELERATION SENSOR
US10081535B2 (en) * 2013-06-25 2018-09-25 Analog Devices, Inc. Apparatus and method for shielding and biasing in MEMS devices encapsulated by active circuitry
FR3008690B1 (en) * 2013-07-22 2016-12-23 Commissariat Energie Atomique DEVICE COMPRISING A FLUID CHANNEL PROVIDED WITH AT LEAST ONE MICRO OR NANOELECTRONIC SYSTEM AND METHOD OF MAKING SUCH A DEVICE
US9102512B2 (en) * 2013-10-04 2015-08-11 Analog Devices, Inc. Sealed MEMS devices with multiple chamber pressures
US20150102437A1 (en) * 2013-10-14 2015-04-16 Freescale Semiconductor, Inc. Mems sensor device with multi-stimulus sensing and method of fabrication
US9764946B2 (en) 2013-10-24 2017-09-19 Analog Devices, Inc. MEMs device with outgassing shield
JP2015112703A (en) * 2013-12-13 2015-06-22 株式会社東芝 Mems device and method for manufacturing the same
SG10201408532SA (en) * 2013-12-19 2015-07-30 Agency Science Tech & Res Method For Thin Film Encapsulation (TFE) Of A Microelectromechanical System (MEMS) Device And The MEMS Device Encapsulated Thereof
US9725310B2 (en) * 2013-12-20 2017-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Micro electromechanical system sensor and method of forming the same
FI127168B (en) 2014-05-20 2017-12-29 Murata Manufacturing Co Method for making a MEMS structure and use of the method
TWI542019B (en) * 2014-06-25 2016-07-11 明銳光電股份有限公司 Pressure sensor and manufacture method thereof
US9676606B2 (en) * 2015-04-29 2017-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Microelectromechanical systems (MEMS) structure to prevent stiction after a wet cleaning process
US20170003499A1 (en) * 2015-07-02 2017-01-05 Pixtronix, Inc. Silane modified fluid for mems stiction reduction
US9567208B1 (en) * 2015-11-06 2017-02-14 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for fabricating the same
US10273141B2 (en) * 2016-04-26 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Rough layer for better anti-stiction deposition
DE102016111911A1 (en) * 2016-06-29 2018-01-04 Snaptrack, Inc. Component with thin-film cover and method of manufacture
US10192850B1 (en) 2016-09-19 2019-01-29 Sitime Corporation Bonding process with inhibited oxide formation
TWI673230B (en) 2017-01-16 2019-10-01 昇佳電子股份有限公司 Manufacturing method of micro-electro-mechanical systems device
US10112822B2 (en) * 2017-02-16 2018-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
DE102017207111A1 (en) * 2017-04-27 2018-10-31 Robert Bosch Gmbh Method for producing a micromechanical inertial sensor
US10446550B2 (en) * 2017-10-13 2019-10-15 Globalfoundries Inc. Cut inside replacement metal gate trench to mitigate N-P proximity effect
CN110713168B (en) * 2018-07-13 2023-09-26 浙江清华柔性电子技术研究院 Method for preparing microfluidic device
DE102018219519A1 (en) * 2018-11-15 2020-05-20 Robert Bosch Gmbh Method for adjusting a pressure in a cavern, system formed using a substrate and a substrate cap
US11834331B2 (en) * 2021-04-07 2023-12-05 Texas Instruments Incorporated MEMS encapsulation employing lower pressure and higher pressure deposition processes
EP4332052A1 (en) * 2022-08-31 2024-03-06 Infineon Technologies AG Encapsulated mems device and method for manufacturing the mems device

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2198611B (en) 1986-12-13 1990-04-04 Spectrol Reliance Ltd Method of forming a sealed diaphragm on a substrate
US4945769A (en) 1989-03-06 1990-08-07 Delco Electronics Corporation Semiconductive structure useful as a pressure sensor
US5369544A (en) 1993-04-05 1994-11-29 Ford Motor Company Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
DE4317274A1 (en) 1993-05-25 1994-12-01 Bosch Gmbh Robert Process for the production of surface-micromechanical structures
US5616514A (en) 1993-06-03 1997-04-01 Robert Bosch Gmbh Method of fabricating a micromechanical sensor
KR0155141B1 (en) 1993-12-24 1998-10-15 손병기 Method for manufacturing a semiconductor device using porous silicons
US5906310A (en) 1994-11-10 1999-05-25 Vlt Corporation Packaging electrical circuits
US5922212A (en) 1995-06-08 1999-07-13 Nippondenso Co., Ltd Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body
US6969635B2 (en) 2000-12-07 2005-11-29 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
JP3361916B2 (en) 1995-06-28 2003-01-07 シャープ株式会社 Method of forming microstructure
US5963788A (en) 1995-09-06 1999-10-05 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
US5759876A (en) 1995-11-01 1998-06-02 United Technologies Corporation Method of making an antifuse structure using a metal cap layer
US6146917A (en) 1997-03-03 2000-11-14 Ford Motor Company Fabrication method for encapsulated micromachined structures
US6287885B1 (en) 1998-05-08 2001-09-11 Denso Corporation Method for manufacturing semiconductor dynamic quantity sensor
US6303986B1 (en) 1998-07-29 2001-10-16 Silicon Light Machines Method of and apparatus for sealing an hermetic lid to a semiconductor die
US6829131B1 (en) 1999-09-13 2004-12-07 Carnegie Mellon University MEMS digital-to-acoustic transducer with error cancellation
US6477901B1 (en) 1999-12-21 2002-11-12 Integrated Sensing Systems, Inc. Micromachined fluidic apparatus
KR100327596B1 (en) 1999-12-31 2002-03-15 박종섭 Method for fabricating contact plug of semiconductor device using Selective Epitaxial Growth of silicon process
US6352935B1 (en) 2000-01-18 2002-03-05 Analog Devices, Inc. Method of forming a cover cap for semiconductor wafer devices
US6489178B2 (en) 2000-01-26 2002-12-03 Texas Instruments Incorporated Method of fabricating a molded package for micromechanical devices
US6507082B2 (en) 2000-02-22 2003-01-14 Texas Instruments Incorporated Flip-chip assembly of protected micromechanical devices
US6310018B1 (en) 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride
JP3435665B2 (en) 2000-06-23 2003-08-11 株式会社村田製作所 Composite sensor element and method of manufacturing the same
US6590267B1 (en) 2000-09-14 2003-07-08 Mcnc Microelectromechanical flexible membrane electrostatic valve device and related fabrication methods
US6498056B1 (en) 2000-10-31 2002-12-24 International Business Machines Corporation Apparatus and method for antifuse with electrostatic assist
EP1220010A3 (en) 2000-12-29 2004-10-27 Texas Instruments Incorporated Micromechanical device recoat methods
US6625047B2 (en) * 2000-12-31 2003-09-23 Texas Instruments Incorporated Micromechanical memory element
US6500348B2 (en) 2001-02-14 2002-12-31 Delphi Technologies, Inc. Deep reactive ion etching process and microelectromechanical devices formed thereby
US6602351B2 (en) 2001-02-15 2003-08-05 Micell Technologies, Inc. Methods for the control of contaminants following carbon dioxide cleaning of microelectronic structures
US6859577B2 (en) 2001-06-25 2005-02-22 Analog Devices Inc. Self assembled micro anti-stiction structure
US6465280B1 (en) 2001-03-07 2002-10-15 Analog Devices, Inc. In-situ cap and method of fabricating same for an integrated circuit device
US6746886B2 (en) 2001-03-19 2004-06-08 Texas Instruments Incorporated MEMS device with controlled gas space chemistry
US6528875B1 (en) 2001-04-20 2003-03-04 Amkor Technology, Inc. Vacuum sealed package for semiconductor chip
KR100421217B1 (en) 2001-05-30 2004-03-02 삼성전자주식회사 Method for fabricating stiction-resistant micromachined structures
US7291363B2 (en) 2001-06-30 2007-11-06 Texas Instruments Incorporated Lubricating micro-machined devices using fluorosurfactants
US6625342B2 (en) 2001-07-03 2003-09-23 Network Photonics, Inc. Systems and methods for overcoming stiction using a lever
EP1423713A1 (en) 2001-08-24 2004-06-02 Honeywell International Inc. Hermetically sealed silicon micro-machined electromechanical system (mems) device having diffused conductors
US6808954B2 (en) * 2001-09-07 2004-10-26 Intel Corporation Vacuum-cavity MEMS resonator
US6818464B2 (en) 2001-10-17 2004-11-16 Hymite A/S Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes
US6815818B2 (en) 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6716275B1 (en) 2001-12-11 2004-04-06 Sandia Corporation Gas impermeable glaze for sealing a porous ceramic surface
US6844218B2 (en) 2001-12-27 2005-01-18 Texas Instruments Incorporated Semiconductor wafer with grouped integrated circuit die having inter-die connections for group testing
US6876046B2 (en) 2002-02-07 2005-04-05 Superconductor Technologies, Inc. Stiction alleviation using passivation layer patterning
US7045459B2 (en) 2002-02-19 2006-05-16 Northrop Grumman Corporation Thin film encapsulation of MEMS devices
US20030161949A1 (en) 2002-02-28 2003-08-28 The Regents Of The University Of California Vapor deposition of dihalodialklysilanes
US6701779B2 (en) 2002-03-21 2004-03-09 International Business Machines Corporation Perpendicular torsion micro-electromechanical switch
US20030183916A1 (en) * 2002-03-27 2003-10-02 John Heck Packaging microelectromechanical systems
US6621392B1 (en) 2002-04-25 2003-09-16 International Business Machines Corporation Micro electromechanical switch having self-aligned spacers
US6739497B2 (en) 2002-05-13 2004-05-25 International Busines Machines Corporation SMT passive device noflow underfill methodology and structure
JP3967199B2 (en) 2002-06-04 2007-08-29 シャープ株式会社 Semiconductor device and manufacturing method thereof
US6822326B2 (en) 2002-09-25 2004-11-23 Ziptronix Wafer bonding hermetic encapsulation
US6743740B2 (en) 2002-10-18 2004-06-01 Intel Corporation Using sonic energy in connection with laser-assisted direct imprinting
US6835657B2 (en) 2002-12-02 2004-12-28 Applied Materials, Inc. Method for recrystallizing metal in features of a semiconductor chip
US6777263B1 (en) * 2003-08-21 2004-08-17 Agilent Technologies, Inc. Film deposition to enhance sealing yield of microcap wafer-level package with vias
US6930367B2 (en) * 2003-10-31 2005-08-16 Robert Bosch Gmbh Anti-stiction technique for thin film and wafer-bonded encapsulated microelectromechanical systems
US7449355B2 (en) * 2005-04-27 2008-11-11 Robert Bosch Gmbh Anti-stiction technique for electromechanical systems and electromechanical device employing same

Also Published As

Publication number Publication date
US20060246631A1 (en) 2006-11-02
US7625773B2 (en) 2009-12-01
US7449355B2 (en) 2008-11-11
US20090065928A1 (en) 2009-03-12
WO2006115592A1 (en) 2006-11-02

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