WO2006113725A3 - Optical transceiver integratable with silicon vlsi - Google Patents

Optical transceiver integratable with silicon vlsi Download PDF

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Publication number
WO2006113725A3
WO2006113725A3 PCT/US2006/014578 US2006014578W WO2006113725A3 WO 2006113725 A3 WO2006113725 A3 WO 2006113725A3 US 2006014578 W US2006014578 W US 2006014578W WO 2006113725 A3 WO2006113725 A3 WO 2006113725A3
Authority
WO
WIPO (PCT)
Prior art keywords
modulator
optical transceiver
integratable
resonant cavity
semiconductor nanocrystals
Prior art date
Application number
PCT/US2006/014578
Other languages
French (fr)
Other versions
WO2006113725A2 (en
Inventor
Ya-Hong Xie
Bin Shi
Original Assignee
Univ California
Ya-Hong Xie
Bin Shi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Ya-Hong Xie, Bin Shi filed Critical Univ California
Publication of WO2006113725A2 publication Critical patent/WO2006113725A2/en
Publication of WO2006113725A3 publication Critical patent/WO2006113725A3/en
Priority to US11/871,024 priority Critical patent/US7589882B2/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/218—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference using semi-conducting materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/213—Fabry-Perot type

Abstract

A modulator for an optical transceiver is disclosed. The modulator has two quarter-wave stack mirrors composed of alternating dielectric layers with an optically absorbing layer sandwiched in between to form the vertical resonant cavity. The optically absorbing layer is made of semiconductor nanocrystals embedded in a dialectic material. The device is configured to operate near the saturation point of the absorption layer. By adjusting the biasing voltage across the absorption layer, the saturation threshold of the semiconductor nanocrystals is altered, resulting in the overall reflectivity of the resonant cavity to vary. The modulator is configured to be fabricated as the extension of the backend process of Si CMOS.
PCT/US2006/014578 2005-04-18 2006-04-18 Optical transceiver integratable with silicon vlsi WO2006113725A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/871,024 US7589882B2 (en) 2005-04-18 2007-10-11 Optical transceiver integratable with silicon VLSI

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67291105P 2005-04-18 2005-04-18
US60/672,911 2005-04-18

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/871,024 Continuation US7589882B2 (en) 2005-04-18 2007-10-11 Optical transceiver integratable with silicon VLSI

Publications (2)

Publication Number Publication Date
WO2006113725A2 WO2006113725A2 (en) 2006-10-26
WO2006113725A3 true WO2006113725A3 (en) 2007-03-01

Family

ID=37115869

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/014578 WO2006113725A2 (en) 2005-04-18 2006-04-18 Optical transceiver integratable with silicon vlsi

Country Status (2)

Country Link
US (1) US7589882B2 (en)
WO (1) WO2006113725A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7606499B2 (en) * 2005-08-01 2009-10-20 Massachusetts Institute Of Technology Bidirectional transceiver assembly for POF application
DE102013006624B3 (en) * 2013-04-18 2014-05-28 Forschungszentrum Jülich GmbH High-frequency conductor with improved conductivity and method of its production
CN105378937B (en) * 2013-08-02 2017-08-08 英特尔公司 Low-voltage photoelectric detector
US9749054B2 (en) * 2014-07-27 2017-08-29 Mer-Cello Wireless Solutions Ltd. Multilayer vertical cavity surface emitting electro-absorption optical transceiver
US20170047708A1 (en) * 2015-08-12 2017-02-16 Finisar Corporation Wavefunction deconfinement electro-absorption modulator
WO2017171988A2 (en) * 2016-01-21 2017-10-05 The Trustees Of Columbia University In The City Of New York Micron-scale active complementary metal-oxide-semiconductor (cmos) optical tags

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5495360A (en) * 1994-12-02 1996-02-27 Bell Communications Research Inc. 1.5 μm wavelength asymmetric fabry-perot modulator with negative chirp
US5909303A (en) * 1996-01-04 1999-06-01 The Board Of Trustees Of The Leland Stanford Junior University Optical modulator and optical modulator array
US6005707A (en) * 1997-11-21 1999-12-21 Lucent Technologies Inc. Optical devices comprising polymer-dispersed crystalline materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5495360A (en) * 1994-12-02 1996-02-27 Bell Communications Research Inc. 1.5 μm wavelength asymmetric fabry-perot modulator with negative chirp
US5909303A (en) * 1996-01-04 1999-06-01 The Board Of Trustees Of The Leland Stanford Junior University Optical modulator and optical modulator array
US6005707A (en) * 1997-11-21 1999-12-21 Lucent Technologies Inc. Optical devices comprising polymer-dispersed crystalline materials

Also Published As

Publication number Publication date
WO2006113725A2 (en) 2006-10-26
US20080085120A1 (en) 2008-04-10
US7589882B2 (en) 2009-09-15

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