WO2006107356A3 - Method of adding fabrication monitors to integrated circuit chips - Google Patents

Method of adding fabrication monitors to integrated circuit chips Download PDF

Info

Publication number
WO2006107356A3
WO2006107356A3 PCT/US2005/047083 US2005047083W WO2006107356A3 WO 2006107356 A3 WO2006107356 A3 WO 2006107356A3 US 2005047083 W US2005047083 W US 2005047083W WO 2006107356 A3 WO2006107356 A3 WO 2006107356A3
Authority
WO
WIPO (PCT)
Prior art keywords
integrated circuit
shapes
monitors
circuit chips
fill
Prior art date
Application number
PCT/US2005/047083
Other languages
French (fr)
Other versions
WO2006107356A2 (en
Inventor
James W Adkisson
Greg Bazan
John M Cohn
Matthew S Grady
Thomas G Sopchak
David P Vallett
Original Assignee
Ibm
James W Adkisson
Greg Bazan
John M Cohn
Matthew S Grady
Thomas G Sopchak
David P Vallett
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, James W Adkisson, Greg Bazan, John M Cohn, Matthew S Grady, Thomas G Sopchak, David P Vallett filed Critical Ibm
Priority to JP2008504019A priority Critical patent/JP5052501B2/en
Priority to EP05855609.3A priority patent/EP1869595B1/en
Priority to CN2005800492611A priority patent/CN101147148B/en
Publication of WO2006107356A2 publication Critical patent/WO2006107356A2/en
Publication of WO2006107356A3 publication Critical patent/WO2006107356A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An integrated circuit, a method and a system for designing and a method fabricating the integrated circuit. The method including: (a) generating a photomask level design of an integrated circuit design (300) of the integrated circuit, the photomask level design comprising a multiplicity of integrated circuit element shapes; (b) designating regions of the photomask level design between adjacent integrated circuit element shapes, the designated regions large enough to require placement of fill shaped (305) between the adjacent integrated circuit elements based on fill shape rules (310), the fill shapes not required for the operation of the integrated circuit; and (c) placing one or more monitor structure shapes (320) of a monitor structure (315) in at least one of the designated regions, the monitor structure not required for the operation of the integrated circuit.
PCT/US2005/047083 2005-04-04 2005-12-22 Method of adding fabrication monitors to integrated circuit chips WO2006107356A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008504019A JP5052501B2 (en) 2005-04-04 2005-12-22 Method for adding a manufacturing monitor to an integrated circuit chip
EP05855609.3A EP1869595B1 (en) 2005-04-04 2005-12-22 Method of adding fabrication monitors to integrated circuit chips
CN2005800492611A CN101147148B (en) 2005-04-04 2005-12-22 Method of adding fabrication monitors to integrated circuit chips

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/907,494 2005-04-04
US10/907,494 US7240322B2 (en) 2005-04-04 2005-04-04 Method of adding fabrication monitors to integrated circuit chips

Publications (2)

Publication Number Publication Date
WO2006107356A2 WO2006107356A2 (en) 2006-10-12
WO2006107356A3 true WO2006107356A3 (en) 2007-11-22

Family

ID=37072118

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/047083 WO2006107356A2 (en) 2005-04-04 2005-12-22 Method of adding fabrication monitors to integrated circuit chips

Country Status (6)

Country Link
US (3) US7240322B2 (en)
EP (1) EP1869595B1 (en)
JP (1) JP5052501B2 (en)
CN (1) CN101147148B (en)
TW (1) TWI362598B (en)
WO (1) WO2006107356A2 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7240322B2 (en) * 2005-04-04 2007-07-03 International Business Machines Corporation Method of adding fabrication monitors to integrated circuit chips
US7926006B2 (en) * 2007-02-23 2011-04-12 International Business Machines Corporation Variable fill and cheese for mitigation of BEOL topography
JP5431661B2 (en) * 2007-09-05 2014-03-05 ルネサスエレクトロニクス株式会社 Semiconductor integrated circuit and pattern layout method thereof
US7999566B2 (en) * 2007-12-31 2011-08-16 Hitachi Global Storage Technologies, Netherlands B.V. Wafer level testing
US8716135B1 (en) 2008-01-30 2014-05-06 Cadence Design Systems, Inc. Method of eliminating a lithography operation
WO2009119642A1 (en) * 2008-03-26 2009-10-01 日本電気株式会社 Service response performance analyzing device, method, program, and recording medium containing the program
US20110101534A1 (en) * 2009-11-04 2011-05-05 International Business Machines Corporation Automated short length wire shape strapping and methods of fabricting the same
US8470674B2 (en) * 2011-01-03 2013-06-25 International Business Machines Corporation Structure, method and system for complementary strain fill for integrated circuit chips
TWI447887B (en) * 2011-06-01 2014-08-01 矽品精密工業股份有限公司 Circuit element via chain structure and layout method thereof
US9524916B2 (en) * 2012-10-31 2016-12-20 International Business Machines Corporation Structures and methods for determining TDDB reliability at reduced spacings using the structures
US9059052B2 (en) 2013-05-16 2015-06-16 International Business Machines Corporation Alternating open-ended via chains for testing via formation and dielectric integrity
US9672316B2 (en) 2013-07-17 2017-06-06 Arm Limited Integrated circuit manufacture using direct write lithography
JP5647328B2 (en) * 2013-12-09 2014-12-24 ルネサスエレクトロニクス株式会社 Semiconductor integrated circuit and pattern layout method thereof
US9519210B2 (en) * 2014-11-21 2016-12-13 International Business Machines Corporation Voltage contrast characterization structures and methods for within chip process variation characterization
US10199283B1 (en) 2015-02-03 2019-02-05 Pdf Solutions, Inc. Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage
US9799575B2 (en) 2015-12-16 2017-10-24 Pdf Solutions, Inc. Integrated circuit containing DOEs of NCEM-enabled fill cells
US10593604B1 (en) 2015-12-16 2020-03-17 Pdf Solutions, Inc. Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells
US10978438B1 (en) 2015-12-16 2021-04-13 Pdf Solutions, Inc. IC with test structures and E-beam pads embedded within a contiguous standard cell area
US9905553B1 (en) 2016-04-04 2018-02-27 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells
US9929063B1 (en) 2016-04-04 2018-03-27 Pdf Solutions, Inc. Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates
US9653446B1 (en) 2016-04-04 2017-05-16 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, TS-short-configured, and AA-short-configured, NCEM-enabled fill cells
US9748153B1 (en) 2017-03-29 2017-08-29 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure
US9773774B1 (en) 2017-03-30 2017-09-26 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells
US9768083B1 (en) 2017-06-27 2017-09-19 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells
US9786649B1 (en) 2017-06-27 2017-10-10 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells
US10096530B1 (en) 2017-06-28 2018-10-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells
US9865583B1 (en) 2017-06-28 2018-01-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6998866B1 (en) * 2004-07-27 2006-02-14 International Business Machines Corporation Circuit and method for monitoring defects
US7093213B2 (en) * 2004-08-13 2006-08-15 International Business Machines Corporation Method for designing an integrated circuit defect monitor

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602775B2 (en) * 1981-08-28 1985-01-23 富士通株式会社 Large-scale integrated circuit with monitor function and its manufacturing method
US4801869A (en) * 1987-04-27 1989-01-31 International Business Machines Corporation Semiconductor defect monitor for diagnosing processing-induced defects
US5159752A (en) 1989-03-22 1992-11-03 Texas Instruments Incorporated Scanning electron microscope based parametric testing method and apparatus
JPH0645439A (en) * 1992-07-23 1994-02-18 Nec Corp Semiconductor device
US5736863A (en) 1996-06-19 1998-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Abatement of electron beam charging distortion during dimensional measurements of integrated circuit patterns with scanning electron microscopy by the utilization of specially designed test structures
US5723874A (en) * 1996-06-24 1998-03-03 International Business Machines Corporation Dishing and erosion monitor structure for damascene metal processing
US5781445A (en) 1996-08-22 1998-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma damage monitor
US5959459A (en) * 1996-12-10 1999-09-28 International Business Machines Corporation Defect monitor and method for automated contactless inline wafer inspection
US6147361A (en) 1997-02-07 2000-11-14 Taiwan Semiconductor Manufacturing Company Polysilicon electromigration sensor which can detect and monitor electromigration in composite metal lines on integrated circuit structures with improved sensitivity
US5900644A (en) 1997-07-14 1999-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Test site and a method of monitoring via etch depths for semiconductor devices
US5952674A (en) * 1998-03-18 1999-09-14 International Business Machines Corporation Topography monitor
US6121156A (en) * 1998-04-28 2000-09-19 Cypress Semiconductor Corporation Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit
US6030732A (en) 1999-01-07 2000-02-29 Taiwan Semiconductor Manufacturing Company In-situ etch process control monitor
JP2000294730A (en) * 1999-04-09 2000-10-20 Mitsubishi Electric Corp System lsi chip and its manufacture
JP2001077114A (en) * 1999-09-03 2001-03-23 Seiko Epson Corp Method and device for designing dummy pattern, semiconductor device comprising dummy pattern, and manufacture thereof
US6834117B1 (en) * 1999-11-30 2004-12-21 Texas Instruments Incorporated X-ray defect detection in integrated circuit metallization
JP4307664B2 (en) * 1999-12-03 2009-08-05 株式会社ルネサステクノロジ Semiconductor device
US6509197B1 (en) * 1999-12-14 2003-01-21 Kla-Tencor Corporation Inspectable buried test structures and methods for inspecting the same
US6771806B1 (en) * 1999-12-14 2004-08-03 Kla-Tencor Multi-pixel methods and apparatus for analysis of defect information from test structures on semiconductor devices
US6433561B1 (en) * 1999-12-14 2002-08-13 Kla-Tencor Corporation Methods and apparatus for optimizing semiconductor inspection tools
US6362634B1 (en) * 2000-01-14 2002-03-26 Advanced Micro Devices, Inc. Integrated defect monitor structures for conductive features on a semiconductor topography and method of use
US6576923B2 (en) * 2000-04-18 2003-06-10 Kla-Tencor Corporation Inspectable buried test structures and methods for inspecting the same
US6787271B2 (en) * 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US6808944B1 (en) * 2000-07-24 2004-10-26 Cypress Semiconductor Corporation Structure and method for monitoring a semiconductor process, and method of making such a structure
KR100363093B1 (en) * 2000-07-28 2002-12-05 삼성전자 주식회사 Method of planarizing interlevel insulating layer in semiconductor device
JP2002110809A (en) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp Design method of dummy pattern and manufacturing method of semiconductor device
US6504225B1 (en) * 2001-04-18 2003-01-07 Advanced Micro Devices, Inc. Teos seaming scribe line monitor
JP3556647B2 (en) * 2001-08-21 2004-08-18 沖電気工業株式会社 Method for manufacturing semiconductor device
JP2005533363A (en) * 2001-09-28 2005-11-04 ピー・デイ・エフ ソリユーシヨンズ インコーポレイテツド Test structure for evaluating dishing and erosion effects in copper damascene technology
US6624031B2 (en) * 2001-11-20 2003-09-23 International Business Machines Corporation Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure
AU2003216443A1 (en) * 2002-02-28 2003-09-16 Pdf Solutions, Inc. Back end of line clone test vehicle
KR100476890B1 (en) * 2002-04-11 2005-03-17 삼성전자주식회사 Test pattern and method of cmp process control using the same
KR100428791B1 (en) * 2002-04-17 2004-04-28 삼성전자주식회사 Method of forming dual damascene interconnection using low dielectric material
US6823496B2 (en) * 2002-04-23 2004-11-23 International Business Machines Corporation Physical design characterization system
US6623995B1 (en) * 2002-10-30 2003-09-23 Taiwan Semiconductor Manufacturing Company Optimized monitor method for a metal patterning process
US6774395B1 (en) * 2003-01-15 2004-08-10 Advanced Micro Devices, Inc. Apparatus and methods for characterizing floating body effects in SOI devices
US7507598B2 (en) * 2003-06-06 2009-03-24 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor fabrication method and structure
US7089522B2 (en) * 2003-06-11 2006-08-08 Chartered Semiconductor Manufacturing, Ltd. Device, design and method for a slot in a conductive area
US7135344B2 (en) * 2003-07-11 2006-11-14 Applied Materials, Israel, Ltd. Design-based monitoring
US6936920B2 (en) * 2003-08-29 2005-08-30 Lsi Logic Corporation Voltage contrast monitor for integrated circuit defects
US7194706B2 (en) * 2004-07-27 2007-03-20 International Business Machines Corporation Designing scan chains with specific parameter sensitivities to identify process defects
US7240322B2 (en) * 2005-04-04 2007-07-03 International Business Machines Corporation Method of adding fabrication monitors to integrated circuit chips

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6998866B1 (en) * 2004-07-27 2006-02-14 International Business Machines Corporation Circuit and method for monitoring defects
US7093213B2 (en) * 2004-08-13 2006-08-15 International Business Machines Corporation Method for designing an integrated circuit defect monitor

Also Published As

Publication number Publication date
TWI362598B (en) 2012-04-21
CN101147148A (en) 2008-03-19
CN101147148B (en) 2010-07-07
EP1869595B1 (en) 2013-08-07
TW200705229A (en) 2007-02-01
WO2006107356A2 (en) 2006-10-12
JP2008535239A (en) 2008-08-28
US20070160920A1 (en) 2007-07-12
EP1869595A4 (en) 2009-12-16
US7240322B2 (en) 2007-07-03
EP1869595A2 (en) 2007-12-26
US7323278B2 (en) 2008-01-29
JP5052501B2 (en) 2012-10-17
US20060225023A1 (en) 2006-10-05
US20080017857A1 (en) 2008-01-24
US7620931B2 (en) 2009-11-17

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