WO2006104863A3 - A plasma enhanced atomic layer deposition system - Google Patents

A plasma enhanced atomic layer deposition system Download PDF

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Publication number
WO2006104863A3
WO2006104863A3 PCT/US2006/010682 US2006010682W WO2006104863A3 WO 2006104863 A3 WO2006104863 A3 WO 2006104863A3 US 2006010682 W US2006010682 W US 2006010682W WO 2006104863 A3 WO2006104863 A3 WO 2006104863A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing chamber
process material
chamber
atomic layer
layer deposition
Prior art date
Application number
PCT/US2006/010682
Other languages
French (fr)
Other versions
WO2006104863A2 (en
Inventor
Tadahiro Ishizaka
Tsukasa Matsuda
Jr Frankm Cerio
Kaoru Yamamoto
Original Assignee
Tokyo Electron Ltd
Tadahiro Ishizaka
Tsukasa Matsuda
Jr Frankm Cerio
Kaoru Yamamoto
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tadahiro Ishizaka, Tsukasa Matsuda, Jr Frankm Cerio, Kaoru Yamamoto filed Critical Tokyo Electron Ltd
Publication of WO2006104863A2 publication Critical patent/WO2006104863A2/en
Publication of WO2006104863A3 publication Critical patent/WO2006104863A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Abstract

A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by altematingly introducing the first process material and the second process material.
PCT/US2006/010682 2005-03-28 2006-03-22 A plasma enhanced atomic layer deposition system WO2006104863A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/090,256 2005-03-28
US11/090,256 US7651568B2 (en) 2005-03-28 2005-03-28 Plasma enhanced atomic layer deposition system

Publications (2)

Publication Number Publication Date
WO2006104863A2 WO2006104863A2 (en) 2006-10-05
WO2006104863A3 true WO2006104863A3 (en) 2007-10-04

Family

ID=37033920

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/010682 WO2006104863A2 (en) 2005-03-28 2006-03-22 A plasma enhanced atomic layer deposition system

Country Status (3)

Country Link
US (1) US7651568B2 (en)
TW (1) TW200727342A (en)
WO (1) WO2006104863A2 (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100676979B1 (en) * 2001-02-09 2007-02-01 동경 엘렉트론 주식회사 Film forming device
JP4943669B2 (en) * 2005-06-08 2012-05-30 東京エレクトロン株式会社 Vacuum device seal structure
WO2007009190A1 (en) * 2005-07-21 2007-01-25 Hard Technologies Pty Ltd Duplex surface treatment of metal objects
JP4997842B2 (en) * 2005-10-18 2012-08-08 東京エレクトロン株式会社 Processing equipment
KR100849929B1 (en) * 2006-09-16 2008-08-26 주식회사 피에조닉스 Apparatus of chemical vapor deposition with a showerhead regulating the injection velocity of reactive gases positively and a method thereof
US7829158B2 (en) * 2007-05-07 2010-11-09 Tokyo Electron Limited Method for depositing a barrier layer on a low dielectric constant material
JP5308679B2 (en) * 2008-01-22 2013-10-09 東京エレクトロン株式会社 Seal mechanism, seal groove, seal member, and substrate processing apparatus
KR101588482B1 (en) * 2008-07-07 2016-01-25 램 리써치 코포레이션 Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber
TWI475592B (en) 2008-07-07 2015-03-01 Lam Res Corp Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting plasma instabilities in a plasma processing chamber
US20110065287A1 (en) * 2009-09-11 2011-03-17 Tokyo Electron Limited Pulsed chemical vapor deposition of metal-silicon-containing films
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US8580693B2 (en) * 2010-08-27 2013-11-12 Applied Materials, Inc. Temperature enhanced electrostatic chucking in plasma processing apparatus
US8133349B1 (en) * 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
KR101253908B1 (en) * 2011-06-02 2013-04-16 주식회사 케이씨텍 Showerhead module of atomic layer deposition apparatus
US9017481B1 (en) * 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
JP6054695B2 (en) * 2011-11-25 2016-12-27 東京エレクトロン株式会社 Deposition equipment
CN102677022B (en) * 2012-01-04 2014-12-24 北京印刷学院 Atomic layer deposition device
JP2013182961A (en) * 2012-02-29 2013-09-12 Toshiba Corp Semiconductor manufacturing device and method of manufacturing semiconductor device
WO2014143903A1 (en) * 2013-03-15 2014-09-18 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and a gasket for use therein
TWI627305B (en) * 2013-03-15 2018-06-21 應用材料股份有限公司 Atmospheric lid with rigid plate for carousel processing chambers
US9478438B2 (en) * 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
JP5800969B1 (en) * 2014-08-27 2015-10-28 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium
JP5916909B1 (en) * 2015-02-06 2016-05-11 株式会社日立国際電気 Substrate processing apparatus, gas rectifier, semiconductor device manufacturing method and program
US9963782B2 (en) * 2015-02-12 2018-05-08 Asm Ip Holding B.V. Semiconductor manufacturing apparatus
US11384432B2 (en) 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US10253412B2 (en) * 2015-05-22 2019-04-09 Lam Research Corporation Deposition apparatus including edge plenum showerhead assembly
SG10201606973YA (en) * 2015-08-31 2017-03-30 Ultratech Inc Plasma-enhanced atomic layer deposition system with rotary reactor tube
WO2017070634A1 (en) * 2015-10-23 2017-04-27 Applied Materials, Inc. Methods for spatial metal atomic layer deposition
KR20170048787A (en) * 2015-10-27 2017-05-10 세메스 주식회사 Apparatus and Method for treating a substrate
JP6570993B2 (en) * 2015-12-16 2019-09-04 東京エレクトロン株式会社 Plasma processing equipment
KR20190092154A (en) * 2018-01-30 2019-08-07 삼성전자주식회사 Sealing device and Gas flow control device of semiconductor equipment
EP4207244A1 (en) 2019-08-12 2023-07-05 Kurt J. Lesker Company Ultra high purity conditions for atomic scale processing
USD931241S1 (en) 2019-08-28 2021-09-21 Applied Materials, Inc. Lower shield for a substrate processing chamber
US20210066051A1 (en) * 2019-08-28 2021-03-04 Applied Materials, Inc. High conductance lower shield for process chamber
DE102020112568A1 (en) 2020-02-14 2021-08-19 AIXTRON Ltd. Gas inlet element for a CVD reactor
WO2022015512A1 (en) * 2020-07-13 2022-01-20 Lam Research Corporation Seal venting in a substrate processing chamber
US11946140B2 (en) * 2021-03-26 2024-04-02 Applied Materials, Inc. Hot showerhead

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5935336A (en) * 1996-04-02 1999-08-10 Micron Technology, Inc. Apparatus to increase gas residence time in a reactor
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US20030200929A1 (en) * 1999-12-10 2003-10-30 Hayashi Otsuki Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US20040017049A1 (en) * 2002-07-29 2004-01-29 Tokyo Electron Limited Sealing apparatus having a single groove
US20040082251A1 (en) * 2002-10-29 2004-04-29 Applied Materials, Inc. Apparatus for adjustable gas distribution for semiconductor substrate processing
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3672207A (en) * 1971-01-04 1972-06-27 North American Rockwell Apparatus for verifying hermeticity of small electronic assemblies
US5133561A (en) * 1990-02-26 1992-07-28 Tokyo Electron Limited Sealing device
US5578132A (en) * 1993-07-07 1996-11-26 Tokyo Electron Kabushiki Kaisha Apparatus for heat treating semiconductors at normal pressure and low pressure
US5997963A (en) * 1998-05-05 1999-12-07 Ultratech Stepper, Inc. Microchamber
US6232248B1 (en) * 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
KR100596822B1 (en) * 1999-03-30 2006-07-03 동경 엘렉트론 주식회사 Plasma processing apparatus, its repair method, and its construction method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5935336A (en) * 1996-04-02 1999-08-10 Micron Technology, Inc. Apparatus to increase gas residence time in a reactor
US20030200929A1 (en) * 1999-12-10 2003-10-30 Hayashi Otsuki Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US20040017049A1 (en) * 2002-07-29 2004-01-29 Tokyo Electron Limited Sealing apparatus having a single groove
US20040082251A1 (en) * 2002-10-29 2004-04-29 Applied Materials, Inc. Apparatus for adjustable gas distribution for semiconductor substrate processing

Also Published As

Publication number Publication date
TW200727342A (en) 2007-07-16
US20060213438A1 (en) 2006-09-28
WO2006104863A2 (en) 2006-10-05
US7651568B2 (en) 2010-01-26

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