WO2006104803A3 - Novel photosensitive resin compositions - Google Patents

Novel photosensitive resin compositions Download PDF

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Publication number
WO2006104803A3
WO2006104803A3 PCT/US2006/010394 US2006010394W WO2006104803A3 WO 2006104803 A3 WO2006104803 A3 WO 2006104803A3 US 2006010394 W US2006010394 W US 2006010394W WO 2006104803 A3 WO2006104803 A3 WO 2006104803A3
Authority
WO
WIPO (PCT)
Prior art keywords
composition
compound
present
photosensitive resin
substrate
Prior art date
Application number
PCT/US2006/010394
Other languages
French (fr)
Other versions
WO2006104803A2 (en
Inventor
Ahmad A Naiini
David B Powell
Jon N Metivier
Donald F Perry
Original Assignee
Fujifilm Electronic Materials
Ahmad A Naiini
David B Powell
Jon N Metivier
Donald F Perry
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials, Ahmad A Naiini, David B Powell, Jon N Metivier, Donald F Perry filed Critical Fujifilm Electronic Materials
Priority to EP06739266A priority Critical patent/EP1861749A4/en
Priority to JP2008503127A priority patent/JP2008535003A/en
Publication of WO2006104803A2 publication Critical patent/WO2006104803A2/en
Publication of WO2006104803A3 publication Critical patent/WO2006104803A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives

Abstract

A photosensitive resin composition comprising: (a) at least one polybenzoxazole precursor polymer; (b) at least one compound having Structure Vl wherein, V is CH or N, Y is O or NR3 wherein R3 is H, CH3 or C2H5, R1 and R2 each independently are H, C1 - C4 alkyl group, C1 - C4 alkoxy group, cyclopentyl or cyclohexyl, or alternatively, R1 and R2 can be fused to produce a substituted or unsubstituted benzene ring; and (c) at least one solvent; wherein the amount of the compound of Structure VI present in the composition is effective to inhibit residue from forming when the composition is coated on a substrate and the coated substrate is subsequently processed to form an image on the substrate, and with the proviso that if the polybenzoxazole precursor polymer solely consists of polybenzoxazole precursor polymers that do not contain a photoactive moiety in the polymer, then (d) at least one photoactive compound is also present in the composition.. The present invention also concerns a process for forming a relief pattern and electronic parts using the composition.
PCT/US2006/010394 2005-03-25 2006-03-22 Novel photosensitive resin compositions WO2006104803A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP06739266A EP1861749A4 (en) 2005-03-25 2006-03-22 Novel photosensitive resin compositions
JP2008503127A JP2008535003A (en) 2005-03-25 2006-03-22 Novel photosensitive resin composition

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US66554605P 2005-03-25 2005-03-25
US60/665,546 2005-03-25
US68934705P 2005-06-10 2005-06-10
US60/689,347 2005-06-10

Publications (2)

Publication Number Publication Date
WO2006104803A2 WO2006104803A2 (en) 2006-10-05
WO2006104803A3 true WO2006104803A3 (en) 2008-01-10

Family

ID=37053909

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/010394 WO2006104803A2 (en) 2005-03-25 2006-03-22 Novel photosensitive resin compositions

Country Status (6)

Country Link
US (1) US7407731B2 (en)
EP (1) EP1861749A4 (en)
JP (1) JP2008535003A (en)
KR (1) KR20070118584A (en)
TW (1) TW200640998A (en)
WO (1) WO2006104803A2 (en)

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US7687208B2 (en) * 2006-08-15 2010-03-30 Asahi Kasei Emd Corporation Positive photosensitive resin composition
US7592119B2 (en) * 2007-02-09 2009-09-22 Sony Corporation Photosensitive polyimide resin composition
JP5205772B2 (en) * 2007-03-01 2013-06-05 住友ベークライト株式会社 Positive photosensitive resin composition, cured film, protective film, insulating film, and semiconductor device and display device using the same
DE602008003423D1 (en) * 2007-03-23 2010-12-23 Council Scient Ind Res NEW DIAZO NAPHTHOCHINONE SULFURIC ACID BISPHENOL DERIVATIVE FOR PHOTOLITHOGRAPHIC SUBMICRON STRUCTURING AND MANUFACTURING METHOD THEREFOR
US9519216B2 (en) * 2008-02-04 2016-12-13 Fujifilm Electronic Materials U.S.A., Inc. Positive photosensitive resin compositions
KR100932765B1 (en) * 2008-02-28 2009-12-21 한양대학교 산학협력단 Polyimide-polybenzoxazole copolymer, preparation method thereof, and gas separation membrane comprising the same
CA2640517A1 (en) * 2008-05-19 2009-11-19 Industry-University Cooperation Foundation, Hanyang University Polyamic acids dope composition, preparation method of hollow fiber using the same and hollow fiber prepared therefrom
US8013103B2 (en) * 2008-10-10 2011-09-06 Industry-University Cooperation Foundation, Hanyang University Polymer compounds and a preparation method thereof
US8487064B2 (en) 2008-10-10 2013-07-16 Industry-University Cooperation Foundation, Hanyang University Polymer compounds and a preparation method thereof
US8231785B2 (en) * 2009-05-12 2012-07-31 Uop Llc Staged membrane system for gas, vapor, and liquid separations
JP5562585B2 (en) * 2009-07-06 2014-07-30 旭化成イーマテリアルズ株式会社 Photosensitive resin composition
KR101021947B1 (en) * 2009-08-28 2011-03-16 주식회사 엘지화학 Low temperature curable photosensitive resin composition and dry film prepared using the same
KR101200140B1 (en) * 2009-08-31 2012-11-12 금호석유화학 주식회사 Positive typed photosensitive composition
KR20110023354A (en) * 2009-08-31 2011-03-08 금호석유화학 주식회사 Positive typed photosensitive composition
JP2011053458A (en) * 2009-09-02 2011-03-17 Hitachi Chemical Dupont Microsystems Ltd Photosensitive resin composition, method of manufacturing pattern-cured film using the same, and electronic component
KR101333698B1 (en) 2009-11-10 2013-11-27 제일모직주식회사 Positive photosensitive resin composition
KR101186675B1 (en) * 2010-01-22 2012-09-27 금호석유화학 주식회사 Positive typed photosensitive composition
US20130108967A1 (en) * 2010-07-09 2013-05-02 Sumitomo Bakelite Co., Ltd. Method for forming cured film
KR20120066923A (en) 2010-12-15 2012-06-25 제일모직주식회사 Novel phenol compounds and positive photosensitive resin composition including the same
KR101423539B1 (en) 2010-12-20 2014-07-25 삼성전자 주식회사 Positive type photosensitive resin composition
KR101910220B1 (en) 2011-06-15 2018-10-19 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 Photosensitive resin composition, method for forming pattern-cured film using photosensitive resin composition, and electronic component
JP2014084347A (en) * 2012-10-22 2014-05-12 Sumitomo Bakelite Co Ltd Polyamide resin, positive type photosensitive resin composition, cured film, protection film, insulating film, semiconductor device, and display device
US8841062B2 (en) * 2012-12-04 2014-09-23 Az Electronic Materials (Luxembourg) S.A.R.L. Positive working photosensitive material
JP6225445B2 (en) * 2013-03-26 2017-11-08 東レ株式会社 Photoresist for dry etching, relief pattern using the same, and method for manufacturing light emitting device
KR102028483B1 (en) * 2013-09-17 2019-10-07 동우 화인켐 주식회사 A colored photosensitive resin composition, color filter and liquid crystal display device having the same
JP6364788B2 (en) * 2014-01-29 2018-08-01 日立化成デュポンマイクロシステムズ株式会社 Photosensitive resin composition and method for producing patterned cured film using the same
US9754805B1 (en) 2016-02-25 2017-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging method and structure
JP6782298B2 (en) * 2016-08-31 2020-11-11 富士フイルム株式会社 Resin composition and its applications
JP2017125210A (en) * 2017-04-05 2017-07-20 住友ベークライト株式会社 Polyamide resin, positive photosensitive resin composition, cured film, protective film, insulation film, semiconductor device and display device
JP7094150B2 (en) * 2018-05-31 2022-07-01 太陽ホールディングス株式会社 Photosensitive resin compositions, dry films, cured products, and electronic components

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Also Published As

Publication number Publication date
TW200640998A (en) 2006-12-01
EP1861749A4 (en) 2010-10-06
KR20070118584A (en) 2007-12-17
EP1861749A2 (en) 2007-12-05
US7407731B2 (en) 2008-08-05
WO2006104803A2 (en) 2006-10-05
US20060216641A1 (en) 2006-09-28
JP2008535003A (en) 2008-08-28

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