WO2006083190A1

WO2006083190A1 - Microelectronic bundle module or device

Info

Publication number: WO2006083190A1
Application number: PCT/RU2005/000183
Authority: WO
Inventors: Bronya Tsoy; Yuriy Vasilievich Kogai; Vladimir Vladimirovich Lavrentiev
Original assignee: Bronya Tsoy; Yuriy Vasilievich Kogai; Lavrentiev Vladimir Vladimirov
Priority date: 2005-01-28
Filing date: 2005-04-12
Publication date: 2006-08-10
Also published as: RU2005101944A

Abstract

The invention relate to radioelectronic engineering and can be used for producing high-accurate, ultra-accurate, ultrastable and high-quality oscillating loops, circuits and devices in radio and electronic sectors requiring a high and ultra-high accuracy and quality of electronic components and circuits. The inventive microelectronic bundle module or device comprises the following multilayer electronic bundle components: microelectronic boards, substrates, conductor tracks, resistors, inductive coils, capacitors, diodes, tyristors, transistors which form different microcircuits for modules or devices and made from thin single-type elements consisting of N>1 layers of thin films or fibre elements, wherein said films and fibres are combined into a pile or beam whose thickness d< 80 mkm, the physical characteristics of the components are proportionally enhanced and the dispersion thereof is decreased when the number of layers in the pile or the number of fibres in the bundle having said thickness is increased. In comparison with single-element modules or devices, the invention makes it possible to increase by one order and more of magnitude the result consisting in improving a resolution capability, input resistance, quality, accuracy and ultra-accuracy, reliability, service life, environmental stability, current overloading and a power.

Description

BEAM MICROELECTRONIC MODULE OR DEVICE.

Field of Invention

The invention relates to electronics and can be used to develop and manufacture high-precision, ultra-precise, ultra-stable and ultra-high-quality oscillatory circuits, circuits and devices, as well as in other areas of radio engineering and electronics, where high and ultra-high accuracy and quality factor of electronic components and circuits are required.

State of the art

A basic radio-electronic circuit (or module) of an oscillatory circuit is known, consisting of a dielectric substrate (electronic board) on which circuit elements are mounted (or sprayed): a conductive circuit, an inductor, and a capacitor having active resistance.

Currently, conductive paths, capacitors, inductors, and other circuit components are made (or sprayed) and arranged on a printed circuit board or semiconductor substrate using a single-layer technology using single-layer (single-element) film or fiber materials.

The disadvantages, for example, of the oscillatory circuits are the low quality factor and the large error arising from the scatter of the physical characteristics of the components of the electronic components: active resistance, inductance coil and capacitor capacitance.

Consider, for example, the shortcomings of these components, which are associated with an error in the physical characteristics of electronic elements.

1. Electronic printed circuit boards from single-layer film materials [1]. The disadvantage of electronic printed circuit boards is the spread of tanδ values and large dielectric losses (tanδ reaches up to 10 ^" - 10 ^" ), which reduces the quality factor and the stability of the oscillatory circuit, the radio signal power is lost and their use in microwave products becomes impossible.

SUBSTITUTE SHEET (RULE 26) 2. The electrical resistance of a circuit made of a thin single-layer conductor (for example, by copper deposition, or etching), etc. [2]. A disadvantage of any resistor is the error of its resistance to the passage of electric current R - up to 15% -20% of the nominal value specified in the technical specifications (TU) of this electronic device and the high noise level created by it during operation.

3. Capacitors with a single-layer dielectric film-interlayer, for example, from mica, polystyrene, fluoroplast, polyimide, etc. [2]. The disadvantage of the capacitor is the error in the values of capacitance and breakdown voltage - up to 10-15% of the nominal value specified in the technical specifications and a large noise level, as well as low quality factor due to the high dielectric loss of the dielectric layer.

4. Inductors from single-layer wire or film conductive paths [3]. The disadvantage of any inductance coils, including flexible ones, is the error in the inductance and quality factor.

At present, in order to compensate for errors arising from the scatter of the values of the active resistance, the circuit includes an additional tuning variable resistance. However, this does not solve the problems associated with the error of other components - capacitance and inductance.

In order to get rid of spurious errors of the electronic circuit, to stabilize its electrical parameters and reduce the level of intrinsic noise, researchers modify the materials of these components, in particular, their chemical structure and develop ultra-pure defect-free materials using expensive technologies, which requires large energy and financial costs .

A superconducting tunneling diode is known from the patent literature, comprising two electrodes, an emitter and a collector of a superconductor, separated by a semiconductor layer. To increase the maximum operating frequency and power, the semiconductor interlayer is made in the form of a multilayer quantum heterostructure consisting of at least two semiconductor

SUBSTITUTE SHEET (RULE 26) materials differing in bandgap. A layer of narrow-gap material is located between the layers of wide-gap materials and forms a potential well for the main charge carriers containing at least one quantum level (see USSR author's certificate N ° 1575858, 1988.)

From the patent literature known superconducting material in the form of a film formed by several monomolecular layers superimposed on each other on a substrate, and containing at least one first set of layers forming an electric charge storage device, and at least one second set of layers forming a superconducting zone, formed of n superconducting layers consisting of copper oxide and separated from each other by cushioning layers, wherein said electric charge storage device and superconducting Single zone adjacent to each other in a tight package layers. Said number n is an integer of at least 4.

The electric charge storage device is formed by at least two layers made of calcium oxide and separated by at least one layer made of at least one metal oxide.

The object of the invention is also components containing material of the type described above, in particular elements of intersystem connections, high-speed transistors, elements of microwave equipment, high-speed communication and storage devices used in digital technology (see RF patent Ja 2131157, 1994).

Disclosure of invention

The invention is aimed at creating, for example, an oscillatory circuit with low and ultra-low values of the dispersion of physical characteristics without modifying the chemical structure of the materials of the circuit components with a low level of intrinsic noise, with high mechanical and electrical strength, and durability.

The implementation of the invention is based on the use in the installation of an oscillatory circuit of electronic components with ultra-precise values of physical characteristics (resistance R, inductance L, capacitance C, dielectric loss tangent tanδ), which have no errors in their

SUBSTITUTE SHEET (RULE 26) values. In turn, the implementation of super-precision and the lack of dispersion in the values of physical characteristics is based on the application, discovered by Russian scientists, of universal general natural laws of changing the physical characteristics of single-element (B. Tsoi effect) and multi-element structures, the phenomenon of a multi-element scale effect (“Tsoi-Kartashov-Shevelev effect” »), As well as the discovery of general patterns of data scatter in physical measurements [4-7].

According to these discoveries, when the linear dimensions of single-element structures (films and fibers) are reduced, the effect of high amplification of the physical characteristics of polymers and solids occurs, and when these single-element structures are combined into a bundle (stack), the effect of an ultrahigh increase in physical characteristics and a decrease in dispersion is proportional to the number of elements in the beam , i.e. the scatter of the experimental data decreases with an increase in the number of individual elements of the same type in the beam.

The technical result in the components, for example, of the oscillatory circuit is achieved by using the open effect: the disappearance of the scatter in the values of the electrophysical parameters of the conductors and dielectrics when combining monofilms (monofilaments) of them into a multilayer stack (bundle) of N elements, where N> 1. In this case, the configuration of thin films or fibers can be arbitrary. Combining in a stack or bundle simultaneously improves the structure of materials and increases their strength characteristics. Another unexpected effect discovered by the authors is a decrease in the level of intrinsic noise of devices made from these materials. Combining in a multilayer stack allows you to improve any materials from single-layer (single) materials.

To eliminate the noted drawbacks, they are assembled into a bundle (stack, packet) of thin fibers (or films) of thickness d <80 μm from N> 1 elements. The constituent elements of the beam (stack, package) can be from any conductive or dielectric materials.

SUBSTITUTE SHEET (RULE 26) The dielectric layer of the capacitor is made of a stack of N> 1 thin film layers with a thickness d <80 μm. Films can be from any dielectric material.

For the inductance loop, a beam (stack) of N> 1 conductive (flat or any other) elements with a thickness of d <80 μm is used.

For electronic printed circuit boards, a multilayer stack of thin monofilms with a thickness d <80 μm of N> 1 layer elements is used. Films can be from any dielectric materials: polyimide, or quartz, or mica.

Brief Description of the Drawings

The invention is illustrated by graphs, drawings and diagrams, where:

Figure l - shows the distribution of the measured values of resistance R, according to sequence numbers n for three series of N = 500 tested samples tested from data on the measurement of single (N = I) samples of copper wire 5 μm thick and length = 10 mm (curve 1 Fig 1). As can be seen from these data, the spread reaches impressive sizes from 0.1 Ohm to 1.0 Ohm. When combined into a beam of N> 1 and N »l (curve 2 and 3 of FIG. 1), the spread unexpectedly decreases to zero. Moreover, an increase in the number of components N in the stack (or in the beam) leads to a further decrease in the resistance value R (curve 3 of FIG. 1).

Similar data were obtained for the values of L, C, tanδ (Figs. 2–3) for monofilms or mono-wires with a thickness of less than 80 μm and the number of constituent elements in a stack (bundle) of more than 1;

Figure 2 - presents:

4, 5 - distribution of capacity C for film polyethylene terephthalate; 4- monofilm with a thickness of d = 20 μm (the number of element layers N = I); 5 - multilayer film, the number of layers N> 1. layer thickness d = 20 μm b, 7 — distribution of inductance L from a copper wire; 6 - inductance coil from a monowire with a thickness of d = 30 μm and b turns and a winding diameter of 5 mm; 7 - a beam inductance coil with a number N> 1 of mono-wires in a beam with a thickness of d = 30 μm, the number of turns in the coil is b, the diameter of the winding is 5 mm.

FIG. 3 are presented:

SUBSTITUTE SHEET (RULE 26) b

8 - distribution of dielectric loss tangent for. PM-4 polyimide monoplesh with a thickness of d = 35 μm, linear dimensions of the sample - 10x10 mm;

9.10 - distribution of the dielectric loss tangent tanδ for a multilayer polyimide film PM-4; monolayer thickness d = 35 μm, layers N> 1.

These experimental data show the implementation of the technical effect in a beam with the number of elements N> 1, namely: the scatter of the experimental values of L, C, tan δ in a beam with the diameter of individual thin (thickness d <80 μm) individual components becomes zero;

FIG. 4 - an example of mounting a resistor on a multilayer flexible printed circuit board, consisting of 4 films of polyimide, where:

11- resistor, 12- copper rings on the top film of the stack, 13- output of the resistor, 14- through holes in the board, 15- lower conductive layer (mounting), 16- monofilms of the stack, 17- drops of solder.

FIG. 5 is a diagram of an oscillatory circuit;

FIG. b - circuit transistor oscillator type RC;

FIG. 7 is a diagram of a transistor oscillator with inductive coupling;

FIG. 8 is a diagram of a resistive cascade of an amplifier with a common emitter;

FIG. 9 is a diagram of a direct amplification direct current amplifier. Embodiments of the Inventions

A beam microelectronic module or device contains multilayer beam electronic components: microelectronic boards, substrates, current paths, resistors, inductors, capacitors, diodes, thyristors, transistors that make up various microcircuits of modules or devices and made of thin separate elements of the same type consisting of N> 1 layers of thin films or fiber elements, and individual films of the same type or fiber elements are combined into a stack or bundle with a thickness of d <80 μm, while increasing layers in st the optical fiber or the number of fiber elements in the bundle at the specified thickness, the physical characteristics of the components are proportionally enhanced, and their dispersion decreases.

SUBSTITUTE SHEET (RULE 26) A beam microelectronic module or device is characterized in that dielectric materials, for example, polyimide, or quartz, or mica are used as films.

A beam microelectronic module or device is characterized in that electrically conductive materials, for example silver, or copper, or carbon fibers, or aluminum, or nichrome are used as films or fiber elements.

The beam microelectronic module is made in the form of an oscillatory circuit.

A beam microelectronic module or device is made in the form of a transistor oscillator type RC.

A beam microelectronic module or device is made in the form of a transistor oscillator with inductive coupling.

A beam microelectronic module or device is made in the form of a resistive cascade amplifier with a common emitter.

A beam microelectronic module or device is made in the form of a direct current amplifier of direct current.

The claimed invention, compared with single-element single-layer modules or devices, can significantly (an order of magnitude or more) increase their technical result, which consists in increasing: the resolution of the module or device; input impedance; quality factor; accuracy and over accuracy; reliability; longevity; resistance to external factors on the device; resistance to current overloads; and the power of the module or device.

Figure 1 shows the distribution of the measured values of resistance R, according to sequence numbers n for three series of n = 500 tested samples tested from data on the measurement of single (N = I) samples of copper wire 5 μm thick and length = 10 mm (curve 1 of FIG. one). As can be seen from these data, the spread reaches impressive sizes from 0.1 Ohm to 1.0 Ohm. When combined into a beam of N> 1 and N »l (curve 2 and 3 of FIG. 1), the spread unexpectedly decreases to zero.

SUBSTITUTE SHEET (RULE 26) Moreover, an increase in the number of components N in the stack (or in the beam) leads to a further decrease in the resistance value R (curve 3 of FIG. 1).

Similar data were obtained for the values of L, C, tanδ (Figs. 2–3) for monofilms or monowires with a thickness of less than 80 μm and the number of constituent elements in a stack (bundle) of more than 1.

In Fig 2 presents:

4, 5 - distribution of capacity C for film polyethylene terephthalate; 4- monofilm with a thickness of d = 20 μm (the number of element layers N = I); 5 - multilayer film, the number of layers N> 1. layer thickness d = 20 μm

6, 7 - distribution of the inductance L of a copper wire; 6 - inductance coil from a monowire with a thickness of d = 30 μm and 6 turns and a winding diameter of 5 mm; 7 - a beam inductance coil with a number N> 1 of mono-wires in a beam with a thickness of d = 30 μm, the number of turns in the coil is 6, the diameter of the winding is 5 mm.

In Fig 3 presents:

8 - distribution of dielectric loss tangent for PM-4 polyimide monofilm with a thickness d = 35 μm, linear dimensions of the sample - 10x10 mm;

9.10 - distribution of the dielectric loss tangent tanδ for a multilayer polyimide film PM-4; monolayer thickness d = 35 μm, layers N> 1

These experimental data show the implementation of the technical effect in the beam with the number of elements N> 1, namely: the scatter of the experimental values of L, C, tan δ in the beam with the diameter of individual thin (thickness d <80 μm) individual components becomes zero.

In addition, from FIG. Figure 3 shows that in the beam (stack or packet), the dielectric loss tangent also decreases significantly to 10 ° and lower (in modern dielectrics, its value is an order of magnitude higher), which makes it possible to use an oscillatory circuit with such values of the dielectric losses of the component components under microwave conditions. At the same time, a decrease in the dielectric loss tangent indicates an increase in the quality factor of the oscillatory circuit with such values of the characteristics of the component components, for example, the oscillatory circuit.

SUBSTITUTE SHEET (RULE 26) The constituent components of the oscillatory circuit can be obtained, for example, as follows (see Fig. 5).

Example 1

A film of conductive material, for example, copper foil with a thickness d <80 μm, is taken. The film is folded into the foot in several layers. The number of layers is selected depending on the required value of the resistance R. An insulating layer, for example, paper with a thickness of several microns, is laid between the layers of the foil. Under the foot in the framework of the present invention should be understood a multilayer (multi-element) structure having a lower layer, upper layer and intermediate layers, each of which is placed in any known manner on the layer closest to it from below. Then, blanks of the necessary configuration and size, for example, of a rectangular shape, are cut out from such a stack of books, for example, electrodes are soldered from opposite sides of such a blank. The simplest resistor is ready.

The resistor can be sprayed. In this case, the insulating layers are also sprayed with an oxide film.

Some additional equipment for the implementation of this example is not required - everything fits into the current technology.

Example 2

An industrial film of a polyimide material with a thickness d <80 μm is taken. The film is folded in several layers. Then (if it is necessary to obtain a small-sized board, for example, for a thin-film microcircuit), blanks for the dimensions and configuration of the future electronic board are cut out of such a stack of books. The blank of the board is planted on the seat. The necessary electronic circuit is deposited onto the blank of the electronic board thus prepared.

For ordinary printed circuit boards and flexible printed cables of the same type, films or plates of the same thickness are stacked in a bundle (stack). At the same time, if it is necessary for screening, a shielding metal coating is applied to the lower layer by spraying, for example, by vacuum spraying or by the galvanic method. On the top layer of the stack (in case of unilateral

SUBSTITUTE SHEET (RULE 26) installation) conductive paths are applied by spraying or electroplating to which the radio components are soldered. In the case of conventional mounting in a stack, through holes are made into which the terminals of the radio components are inserted. At the same time, small conductive rings (half rings) are made on the top film (plate) of the stack. After inserting a radio component, for example, the output of a resistor, capacitor, etc. the element is soldered from the installation side (bottom of the stack). Part of the solder falling into the ring (or half ring) from the top of the stack (the insertion side of the radio component) remains there after hardening and, thus, reliably holds the film (plate) of the stack together without any glue. The installation is reliable, and the dielectric loss tangent of the board is extremely low, which allows it to be used in the microwave range, for example, in converters and amplifiers of parabolic microwave antennas, satellite and terrestrial mobile phones, etc. If current-carrying tracks must be located on both surfaces of the board (two-sided installation), then the rings are not made, and the installation is carried out immediately on the top and bottom film of the stack.

Flexible printed (ribbon) connecting cables and flexible inductors are similarly manufactured. In the manufacture of the latter, a decrease in dielectric loss leads to an increase in the quality factor of the circuit, which allows them to be used, for example, as resonant microwave strip contours.

Example 3. FIG. 4 shows an example of mounting a resistor on a multilayer flexible printed circuit board consisting of 4 polyimide films, where:

1 1- resistor, 12- copper rings on the top film of the stack, 13- output of the resistor, 14- through holes in the board, 15- lower conductive layer (mounting), 16- monofilms of the stack, 17- drops of solder.

Example 4. A thin enamel-insulated silver wire (fiber) with a thickness of less than 80 microns is taken. Then, 10 blank samples of equal length are cut from this wire. Workpieces cut in this way are collected in a bundle. Then the ends of the workpieces are soldered and the simplest ultra-precise resistor is ready.

SUBSTITUTE SHEET (RULE 26) AND

Example 5. Known basic electronic circuit of a transistor oscillator type RC (see Fig. B), consisting of a substrate (electronic board), a semiconductor device (for example, a bipolar or field effect transistor), adjacent to it conductive circuits (circuits), resistors, capacitors from which it is then possible to assemble more complex and combined electronic circuits of generators, for example, an oscillator with inductive coupling (see Fig. 7), etc.

Deficiencies in the electronic circuits of oscillators are similar to deficiencies in amplification circuits, circuits, or in any other single-layer electronic devices. Elimination of deficiencies is also similar to previous cases. The implementation of the invention i.e. based, as in previous cases, using microelectronic components made of separate films of the same type or fiber, with ultra-precise values of physical characteristics (resistance R, inductance L, capacitance C, dielectric loss tangent tanδ, transistors, etc.) that do not have errors in their values and having ideal electrical parameters.

Referring to the examples in FIG. 4-9 various schemes of modules and devices made of multilayer beam microelectronic components, consisting of separate elements of the same type from N> 1 layers of thin films or fiber elements, combined into a stack or beam with a thickness of d <80 μm shows that the claimed invention provides a solution The assigned technical task is the main thing: it increases the resolution of the module or device by an order of magnitude or more.

Information sources.

1. Bogoroditsky H.P., Pasynkov V.V., Tareev B. M. Electrotechnical materials. Ed. 7th, L .: Energoatomizdat, Leningrad. Dep., 1985.- 304 p.

2. Resistors, capacitors, transformers, chokes, switching devices REA: Ref. / NN Akimov, EP Vashchukov, VA Prokhorenko, Yu.P. Khodorenok - Mn .: Belarus, 1994.- 591 p.

SUBSTITUTE SHEET (RULE 26) 3. Production of inductors from flat cable for printed circuit boards. Edrington, Hinkle. University of Applied Research Laboratory Texas.

4. Tsoi, E.M. Kartashov, V.V. Shevelev. The pattern of changes in the physical characteristics of multi-element structures of polymers and solids with a change in the number of elements. Moscow. Diploma N "207 for the opening of 18.06. 2002, reg. Ne 245.

5. Tsoi B, E.M. Kartashov, V.V. Shevelev. The regularity of the distribution of the values of the physical characteristics of polymers and solids under external multifactor exposure. Moscow. Opening diploma N ° 209. October 2, 2002 Reg. N ° 248.

6. Tsoi B., E.M. Kartashov, V.V. Shevelev. The phenomenon of a multi-element scale effect of the characteristics of physical objects (Tsoi-Karatshov-Shevelev effect). Moscow. Opening Diploma Na 243 dated December 16, 2003 Reg. Na 287.

7. Choi B. The pattern of changes in the physical characteristics of single-element structures of polymers and solids with a change in scale (B. Choi effect). Moscow. Opening diploma N ° 247 dated March 2, 2004 Reg. G293.

SUBSTITUTE SHEET (RULE 26)

Claims

Claim.

1. A beam microelectronic module or device containing multilayer beam electronic components: microelectronic circuit boards, substrates, conductive paths, resistors, inductors, capacitors, diodes, thyristors, transistors that make up various microchips of modules or devices and made of thin separate elements of the same type consisting of N> 1 layers of thin films or fiber elements, and individual films of the same type or fiber elements are combined into a stack or bundle with a thickness d <80 μm, while increasing layers in a stack or the number of fiber elements in a bundle at a specified thickness, the physical characteristics of the components are proportionally enhanced, and their dispersion is reduced.

2. A bundle microelectronic module or device according to claim 1, characterized in that dielectric materials, for example, polyimide, or quartz, or mica are used as films.

3. A bundle microelectronic module or device according to claim 1, characterized in that electrically conductive materials, for example, silver, or copper, or carbon fibers, or aluminum, or nichrome, are used as films or fiber elements. v

4. A beam microelectronic module or device according to any one of p. 1-3, characterized in that it is made in the form of an oscillatory circuit.

5. A beam microelectronic module or device according to any one of claims 1 to 3, characterized in that it is made in the form of an RC type transistor oscillator.

6. A beam microelectronic module or device according to any one of p. 1-3, characterized in that it is made in the form of a transistor oscillator with inductive coupling.

7. A beam microelectronic module or device according to any one of p. 1-3, characterized in that it is made in the form of a resistive cascade amplifier with a common emitter.

8. A beam microelectronic module or device according to any one of p. 1-3, characterized in that it is made in the form of a direct current direct current amplifier.

SUBSTITUTE SHEET (RULE 26)