WO2006079084A3 - Method for modification of built in potential of diodes - Google Patents

Method for modification of built in potential of diodes Download PDF

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Publication number
WO2006079084A3
WO2006079084A3 PCT/US2006/002541 US2006002541W WO2006079084A3 WO 2006079084 A3 WO2006079084 A3 WO 2006079084A3 US 2006002541 W US2006002541 W US 2006002541W WO 2006079084 A3 WO2006079084 A3 WO 2006079084A3
Authority
WO
WIPO (PCT)
Prior art keywords
diodes
built
potential
modification
junction
Prior art date
Application number
PCT/US2006/002541
Other languages
French (fr)
Other versions
WO2006079084A2 (en
Inventor
Avto Tavkhelidze
Amiran Bibilashvili
Rodney T Cox
Original Assignee
Borealis Tech Ltd
Avto Tavkhelidze
Amiran Bibilashvili
Rodney T Cox
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Borealis Tech Ltd, Avto Tavkhelidze, Amiran Bibilashvili, Rodney T Cox filed Critical Borealis Tech Ltd
Priority to GB0716559A priority Critical patent/GB2438340B/en
Priority to US11/883,011 priority patent/US8330192B2/en
Publication of WO2006079084A2 publication Critical patent/WO2006079084A2/en
Publication of WO2006079084A3 publication Critical patent/WO2006079084A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

In broad terms the present invention is a semiconductor junction comprising a first material (102) and a second material (104), in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed.
PCT/US2006/002541 2005-01-24 2006-01-24 Method for modification of built in potential of diodes WO2006079084A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0716559A GB2438340B (en) 2005-01-24 2006-01-24 Method for modification of built in potential of diodes
US11/883,011 US8330192B2 (en) 2005-01-24 2006-01-24 Method for modification of built in potential of diodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0501413.9 2005-01-24
GBGB0501413.9A GB0501413D0 (en) 2005-01-24 2005-01-24 Method for modification of built in potential of diodes

Publications (2)

Publication Number Publication Date
WO2006079084A2 WO2006079084A2 (en) 2006-07-27
WO2006079084A3 true WO2006079084A3 (en) 2006-12-07

Family

ID=34259553

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/002541 WO2006079084A2 (en) 2005-01-24 2006-01-24 Method for modification of built in potential of diodes

Country Status (3)

Country Link
US (1) US8330192B2 (en)
GB (2) GB0501413D0 (en)
WO (1) WO2006079084A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11496072B2 (en) * 2020-05-06 2022-11-08 Koucheng Wu Device and method for work function reduction and thermionic energy conversion

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298108A (en) * 1991-07-05 1994-03-29 The University Of California Serpentine superlattice methods and devices
US20040046202A1 (en) * 2002-09-11 2004-03-11 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740592A (en) 1970-11-12 1973-06-19 Energy Res Corp Thermionic converter
US4039352A (en) 1971-09-13 1977-08-02 Institutul De Cercetaro Energetice Industriale Si Proictari Utilaje Energetice High efficiency thermoelectric generator for the direct conversion of heat into electrical energy
US4011582A (en) 1973-10-30 1977-03-08 General Electric Company Deep power diode
US4063965A (en) 1974-10-30 1977-12-20 General Electric Company Making deep power diodes
AT382040B (en) 1983-03-01 1986-12-29 Guenther Stangl METHOD FOR PRODUCING OPTICALLY STRUCTURED FILTERS FOR ELECTROMAGNETIC RADIATION AND OPTICALLY STRUCTURED FILTERS
DE3404137A1 (en) 1984-02-07 1985-08-08 Reinhard Dr. 7101 Flein Dahlberg Thermoelectric configuration having foreign-layer contacts
US5068535A (en) 1988-03-07 1991-11-26 University Of Houston - University Park Time-of-flight ion-scattering spectrometer for scattering and recoiling for electron density and structure
DE3818192A1 (en) 1988-05-28 1989-12-07 Dahlberg Reinhard Thermoelectric arrangement having tunnel contacts
JPH0812913B2 (en) * 1988-11-07 1996-02-07 日本電気株式会社 Semiconductor device and manufacturing method thereof
US5023671A (en) 1989-03-27 1991-06-11 International Business Machines Corporation Microstructures which provide superlattice effects and one-dimensional carrier gas channels
US5233205A (en) 1989-09-25 1993-08-03 Hitachi, Ltd. Quantum wave circuit
JP2670366B2 (en) 1989-11-09 1997-10-29 日本原子力発電株式会社 Thermoelectric generator
EP0437654A1 (en) 1990-01-16 1991-07-24 Reinhard Dr. Dahlberg Thermoelement branch with directional quantization of the charge carriers
US5247223A (en) 1990-06-30 1993-09-21 Sony Corporation Quantum interference semiconductor device
JPH0480964A (en) 1990-07-24 1992-03-13 Nec Corp Semiconductor device
DE69132928T2 (en) 1990-08-09 2002-08-22 Canon Kk Arrangements for coupling or decoupling electron waves and arrangements with a quantum interference effect
EP0480354B1 (en) 1990-10-08 1997-02-26 Canon Kabushiki Kaisha Electron wave interference device and related method for modulating an interference current
US5204588A (en) 1991-01-14 1993-04-20 Sony Corporation Quantum phase interference transistor
JP2744711B2 (en) 1991-03-28 1998-04-28 光技術研究開発株式会社 Quantum wire structure and manufacturing method thereof
JP3235144B2 (en) 1991-08-02 2001-12-04 ソニー株式会社 How to make a quantum box train
JP2730357B2 (en) 1991-11-18 1998-03-25 松下電器産業株式会社 Electronic component mounted connector and method of manufacturing the same
FR2684807B1 (en) 1991-12-10 2004-06-11 Thomson Csf QUANTUM WELL TRANSISTOR WITH RESONANT TUNNEL EFFECT.
JPH05226704A (en) 1992-02-10 1993-09-03 Matsushita Electric Ind Co Ltd Thermoelectric device and its manufacture
JP3455987B2 (en) 1993-02-26 2003-10-14 ソニー株式会社 Quantum box assembly device and information processing method
US5579232A (en) 1993-03-29 1996-11-26 General Electric Company System and method including neural net for tool break detection
US5705321A (en) 1993-09-30 1998-01-06 The University Of New Mexico Method for manufacture of quantum sized periodic structures in Si materials
JP2991931B2 (en) 1994-07-12 1999-12-20 松下電器産業株式会社 Semiconductor devices and their manufacturing methods
US5503963A (en) 1994-07-29 1996-04-02 The Trustees Of Boston University Process for manufacturing optical data storage disk stamper
JPH0870173A (en) 1994-08-30 1996-03-12 Matsushita Electric Ind Co Ltd Circuit board
US5699668A (en) 1995-03-30 1997-12-23 Boreaus Technical Limited Multiple electrostatic gas phase heat pump and method
US5772905A (en) 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US6309580B1 (en) 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US5722242A (en) 1995-12-15 1998-03-03 Borealis Technical Limited Method and apparatus for improved vacuum diode heat pump
US6214651B1 (en) 1996-05-20 2001-04-10 Borealis Technical Limited Doped diamond for vacuum diode heat pumps and vacuum diode thermionic generators
US5675972A (en) 1996-09-25 1997-10-14 Borealis Technical Limited Method and apparatus for vacuum diode-based devices with electride-coated electrodes
US7140102B2 (en) 2001-09-02 2006-11-28 Borealis Technical Limited Electrode sandwich separation
AU9225098A (en) 1997-09-08 1999-03-29 Borealis Technical Limited Diode device
US6225205B1 (en) 1998-01-22 2001-05-01 Ricoh Microelectronics Company, Ltd. Method of forming bump electrodes
US6281514B1 (en) 1998-02-09 2001-08-28 Borealis Technical Limited Method for increasing of tunneling through a potential barrier
US6495843B1 (en) 1998-02-09 2002-12-17 Borealis Technical Limited Method for increasing emission through a potential barrier
US6117344A (en) 1998-03-20 2000-09-12 Borealis Technical Limited Method for manufacturing low work function surfaces
WO1999064642A1 (en) 1998-06-08 1999-12-16 Borealis Technical Limited Method for fabricating metal nanostructures
US6680214B1 (en) 1998-06-08 2004-01-20 Borealis Technical Limited Artificial band gap
WO2000059047A1 (en) 1999-03-11 2000-10-05 Eneco, Inc. Hybrid thermionic energy converter and method
US6417060B2 (en) 2000-02-25 2002-07-09 Borealis Technical Limited Method for making a diode device
US6608250B2 (en) 2000-12-07 2003-08-19 International Business Machines Corporation Enhanced interface thermoelectric coolers using etched thermoelectric material tips
EP1492908A4 (en) 2002-03-22 2006-08-23 Borealis Tech Ltd Influence of surface geometry on metal properties
JP2003342097A (en) 2002-05-28 2003-12-03 Japan Aviation Electronics Industry Ltd Method for making photonic crystal
US20040174596A1 (en) 2003-03-05 2004-09-09 Ricoh Optical Industries Co., Ltd. Polarization optical device and manufacturing method therefor
US7085443B1 (en) * 2003-08-15 2006-08-01 Luxtera, Inc. Doping profiles in PN diode optical modulators
US6891191B2 (en) * 2003-09-02 2005-05-10 Organic Vision Inc. Organic semiconductor devices and methods of fabrication
US7027277B1 (en) * 2004-05-21 2006-04-11 National Semiconductor Corporation High voltage tolerant electrostatic discharge (ESD) protection clamp circuitry

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298108A (en) * 1991-07-05 1994-03-29 The University Of California Serpentine superlattice methods and devices
US20040046202A1 (en) * 2002-09-11 2004-03-11 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same

Also Published As

Publication number Publication date
US20090121254A1 (en) 2009-05-14
GB0501413D0 (en) 2005-03-02
GB0716559D0 (en) 2007-10-10
GB2438340A (en) 2007-11-21
GB2438340B (en) 2010-09-15
US8330192B2 (en) 2012-12-11
WO2006079084A2 (en) 2006-07-27

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