WO2006079084A2 - Method for modification of built in potential of diodes - Google Patents

Method for modification of built in potential of diodes Download PDF

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Publication number
WO2006079084A2
WO2006079084A2 PCT/US2006/002541 US2006002541W WO2006079084A2 WO 2006079084 A2 WO2006079084 A2 WO 2006079084A2 US 2006002541 W US2006002541 W US 2006002541W WO 2006079084 A2 WO2006079084 A2 WO 2006079084A2
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Prior art keywords
semiconductor
junction
metal
electron
junctions
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PCT/US2006/002541
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French (fr)
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WO2006079084A3 (en
Inventor
Avto Tavkhelidze
Amiran Bibilashvili
Rodney T. Cox
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Borealis Technical Limited
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Priority to US11/883,011 priority Critical patent/US8330192B2/en
Priority to GB0716559A priority patent/GB2438340B/en
Publication of WO2006079084A2 publication Critical patent/WO2006079084A2/en
Publication of WO2006079084A3 publication Critical patent/WO2006079084A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to diode devices .
  • Semiconductor heterojunctions were proposed as a way of increasing amplification and achieving higher frequencies and power .
  • Such a heterostructure consists of two semiconductors whose atomic structures fit one another well , but which have different electronic properties .
  • Semiconductor heterostructures have been at least equally important to the development of photonics - lasers , light emitting diodes , modulators and solar panels , to mention a few examples .
  • the semiconductor laser is based upon the recombination of electrons and holes , emitting particles of light, photons . The concentration of electrons , holes and photons becomes much higher if they are confined to a thin semiconductor layer between two others - a double heterojunction.
  • Metal-to-semiconductor junctions are of great importance since they are present in every semiconductor device . They can behave either as a Schottky barrier or as an ohmic contact dependent on the characteristics of the interface .
  • Other junctions that have a significant impact on the performance of a device include metal oxide - semiconductor junctions , such as MOSFET.
  • the ability to tune the barrier height/band-offset is strongly desirable .
  • the contact resistance to a semiconductor can be dramatically improved with a reduction in its Schottky barrier height
  • the ohmic contact issue is particularly relevant for wide band gap semiconductors with doping difficulties , such as the p-type GaW.
  • Another interface where the ability to tune the Schottky barrier height is beneficial is between high permittivity (high-K) gate dielectrics and metal gates , which is an important element of next-generation ULSI devices .
  • metal gates help to keep the crucial effective oxide thickness (EOT) small by avoiding reaction with the high-k dielectric and thereby obviating the need for a (lower-k) buffer layer.
  • metal gate One philosophy for metal gate is to choose a metal with a work function that matches roughly the mid-gap point of the semiconductor .
  • SBH Schottky barrier height
  • layers of insulators , semiconductors , molecular dipoles, and chemical passivation, formed on the semiconductor surface have been shown to modify the barrier height of Schottky contact .
  • the manner by which the SBH is affected by the interlayer is rather unpredictable and system-specific .
  • U. S . Patent Nos . 6 , 281 , 514 , 6 , 495 , 843 , and 6 , 531 , 703 disclose methods for promoting the passage of electrons at or through a potential barrier comprising providing a potential barrier having a geometrical shape for causing de Broglie interference between electrons .
  • the invention provides an electron-emitting surface having a series of indents . The depth of the indents is chosen so that the probability wave of the electron reflected from the bottom of the indent interferes destructively with the probability wave of the electron reflected from the surface . This results in the increase of tunneling through the potential barrier .
  • the invention provides vacuum diode devices , including a vacuum diode heat pump, a thermionic converter and a photoelectric converter, in which either or both of the electrodes in these devices utilize said electron-emitting surface .
  • devices are provided in which the separation of the surfaces in such devices is controlled by piezo-electric positioning elements .
  • a further embodiment provides a method for making an electron-emitting surface having " a series of indents .
  • U. S . Patent No . 6 , 680 , 214 and U. S . Pat . App . No . 2004/0206881 disclose methods for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves . Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal . In a preferred embodiment , a trench or series of nano-sized trenches are formed in the metal .
  • U. S . Patent No . 6 , 117 , 344 discloses methods for fabricating nano-structured surfaces having geometries in which the passage of electrons through a potential barrier is enhanced.
  • the methods use combinations of electron beam lithography, lift-off , and rolling, imprinting or stamping processes .
  • WO9964642 discloses a method for fabricating nanostructures directly in a material film, preferably a metal film, deposited on a substrate .
  • a mold or stamp having a surface which is the topological opposite of the nanostructure to be created is pressed into a heated metal coated on a substrate .
  • the film is cooled and the mold is removed.
  • the thin layer of metal remaining attached to the substrate is removed using bombardment with a charged particle beam.
  • WO03083177 teaches that a metal surface can be modified with patterned indents to increase the Fermi energy level inside the metal , leading to decrease in electron work function. This effect would exist in any quantum system comprising fermions inside a potential energy box .
  • WO04040617 offers a method which blocks movement of low energy electrons through a thermoelectric material . This is achieved using a filter which is more transparent to high energy electrons than to low energy ones .
  • Tunnel barrier on the path of the electrons is used as filter .
  • the filter works on the basis of the wave properties of the electrons .
  • the geometry of the tunnel barrier is such that the barrier becomes transparent for electrons having certain de Broglie wavelength . If the geometry of the barrier is such that its transparency wavelength matches the wavelength of high energy electrons it will be transparent for high energy electrons and will be blocking low energy ones by means of tunnel barrier .
  • the present invention extends our previous work to new junction designs for electronic devices .
  • the present invention is a semiconductor/semiconductor or Metal/Semiconductor junction comprising a first material and a second material , in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed.
  • Figure 1 shows in a schematic fashion a junction of the present invention
  • Figure 2 shows in a schematic fashion the nature of the periodic repeating structure .
  • Figure 1 shows a simple representation of a junction of the present invention
  • a first component 102 of the junction is in contact with a second component 104.
  • Component 104 has a surface that has a periodic repeating structure , as shown in Figure 2.
  • Indent 206 has a width 208 and a depth 212 and the separation between the indents is 210.
  • distances 208 and 210 are substantially equal .
  • distance 208 is of the order of 2 ⁇ m or less .
  • Utilization of e-beam lithography to create structures of the kind shown in Figure 2 may allow indents to be formed in which distance 208 is 200 nm or less .
  • Distance 212 is of the order of 20 nm or less , and is preferably of the order of 5 nm.
  • the dimensions of the repeating structure are such that the probability wave of an electron reflected from the bottom- of an indent of the periodic structure interferes destructively with the probability wave of an electron ⁇ reflected from the surface .
  • the configuration of the surface may resemble a corrugated pattern of squared-off, "u" -shaped ridges and/or valleys .
  • the pattern may be a regular pattern of rectangular “plateaus " or "holes , " where the pattern resembles a checkerboard .
  • the walls of said indents should be substantially perpendicular to one another, and the edges of the indents should be substantially sharp . Further, one of ordinary skill in the art will recognize that other configurations are possible that may produce the desired interference of wave function of electron.
  • the surface configuration may be achieved using conventional approaches known in the art , including without limitation lithography and e-beam milling.
  • component 104 may be a metal or a semiconductor .
  • Component 102 may be a semiconductor or a metal when component 104 is a semiconductor, and is a semiconductor when component 104 is a metal .
  • the metal may also comprise its oxide .
  • Component 102 may be fabricated by methods disclosed in our previous disclosures , or by other approaches known to the art .
  • the structure shown in Figure 1 may additionally comprise a third material 106 , which may be a metal or a semiconductor .
  • Table 1 shows the variations and combinations of junction materials that fall within the scope of the present invention.
  • the present invention results in a change in the built in potential of the junction (both in p-n and Schottky case) . This leads to a change in the opening voltage and breakdown voltage of the junction, and it allows a junction with predefined parameters to be fabricated .
  • Such junctions are applicable in the fields of :
  • p-n diodes including : Bipolar transistors , Photodiodes , Solar batteries .
  • Schottky diodes including : Schottky transistors , Ohmic contacts .
  • Optical heterostructures including : Light diodes , Semiconductor Lasers .

Abstract

In broad terms the present invention is a semiconductor junction comprising a first material (102) and a second material (104), in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed.

Description

Method for Modification of Built in Potential of Diodes
Technical Field
The present invention relates to diode devices .
Background Art
The behaviour of semiconductor devices depends chiefly on the physics of band alignment (more precisely band offsets in semiconductor - semiconductor heterojunctions and Schottky barriers at metal - semiconductor contact) and existence of interface states .
Semiconductor heterojunctions were proposed as a way of increasing amplification and achieving higher frequencies and power . Such a heterostructure consists of two semiconductors whose atomic structures fit one another well , but which have different electronic properties . Semiconductor heterostructures have been at least equally important to the development of photonics - lasers , light emitting diodes , modulators and solar panels , to mention a few examples . The semiconductor laser is based upon the recombination of electrons and holes , emitting particles of light, photons . The concentration of electrons , holes and photons becomes much higher if they are confined to a thin semiconductor layer between two others - a double heterojunction.
Metal-to-semiconductor junctions are of great importance since they are present in every semiconductor device . They can behave either as a Schottky barrier or as an ohmic contact dependent on the characteristics of the interface . Other junctions that have a significant impact on the performance of a device include metal oxide - semiconductor junctions , such as MOSFET.
The ability to tune the barrier height/band-offset is strongly desirable . For example , the contact resistance to a semiconductor can be dramatically improved with a reduction in its Schottky barrier height , The ohmic contact issue is particularly relevant for wide band gap semiconductors with doping difficulties , such as the p-type GaW. Another interface where the ability to tune the Schottky barrier height is beneficial is between high permittivity (high-K) gate dielectrics and metal gates , which is an important element of next-generation ULSI devices . In addition, metal gates help to keep the crucial effective oxide thickness (EOT) small by avoiding reaction with the high-k dielectric and thereby obviating the need for a (lower-k) buffer layer. One philosophy for metal gate is to choose a metal with a work function that matches roughly the mid-gap point of the semiconductor . However, to be able to maintain the threshold gate voltage for the field effect transistor at a convenient voltage , especially at scaled-back power supply voltages , it is desirable to have separate Fermi level positions for the gates on n-type and p-type channels . For this purpose, one needs to control the Schottky barrier height (SBH) between the metal gate and the high-K dielectric . The most successful approaches to modify the SBH has been to insert a very thin layer of material between the metal and the semiconductor . For example, layers of insulators , semiconductors , molecular dipoles, and chemical passivation, formed on the semiconductor surface, have been shown to modify the barrier height of Schottky contact . The manner by which the SBH is affected by the interlayer is rather unpredictable and system-specific .
U. S . Patent Nos . 6 , 281 , 514 , 6 , 495 , 843 , and 6 , 531 , 703 disclose methods for promoting the passage of electrons at or through a potential barrier comprising providing a potential barrier having a geometrical shape for causing de Broglie interference between electrons . In another embodiment, the invention provides an electron-emitting surface having a series of indents . The depth of the indents is chosen so that the probability wave of the electron reflected from the bottom of the indent interferes destructively with the probability wave of the electron reflected from the surface . This results in the increase of tunneling through the potential barrier . In further embodiments , the invention provides vacuum diode devices , including a vacuum diode heat pump, a thermionic converter and a photoelectric converter, in which either or both of the electrodes in these devices utilize said electron-emitting surface . In yet further embodiments , devices are provided in which the separation of the surfaces in such devices is controlled by piezo-electric positioning elements . A further embodiment provides a method for making an electron-emitting surface having" a series of indents .
U. S . Patent No . 6 , 680 , 214 and U. S . Pat . App . No . 2004/0206881 disclose methods for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves . Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal . In a preferred embodiment , a trench or series of nano-sized trenches are formed in the metal .
U. S . Patent No . 6 , 117 , 344 discloses methods for fabricating nano-structured surfaces having geometries in which the passage of electrons through a potential barrier is enhanced. The methods use combinations of electron beam lithography, lift-off , and rolling, imprinting or stamping processes .
WO9964642 discloses a method for fabricating nanostructures directly in a material film, preferably a metal film, deposited on a substrate . In a preferred embodiment a mold or stamp having a surface which is the topological opposite of the nanostructure to be created is pressed into a heated metal coated on a substrate . The film is cooled and the mold is removed. In another embodiment , the thin layer of metal remaining attached to the substrate is removed using bombardment with a charged particle beam.
WO03083177 teaches that a metal surface can be modified with patterned indents to increase the Fermi energy level inside the metal , leading to decrease in electron work function. This effect would exist in any quantum system comprising fermions inside a potential energy box .
WO04040617 offers a method which blocks movement of low energy electrons through a thermoelectric material . This is achieved using a filter which is more transparent to high energy electrons than to low energy ones . Tunnel barrier on the path of the electrons is used as filter . The filter works on the basis of the wave properties of the electrons . The geometry of the tunnel barrier is such that the barrier becomes transparent for electrons having certain de Broglie wavelength . If the geometry of the barrier is such that its transparency wavelength matches the wavelength of high energy electrons it will be transparent for high energy electrons and will be blocking low energy ones by means of tunnel barrier .
Disclosure of Invention
The present invention extends our previous work to new junction designs for electronic devices .
In broad terms the present invention is a semiconductor/semiconductor or Metal/Semiconductor junction comprising a first material and a second material , in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed. Brief Description of Drawings
For a more complete explanation of the present invention and the technical advantages thereof , reference is now made to the following description and the accompanying drawing in which :
Figure 1 shows in a schematic fashion a junction of the present invention;
Figure 2 shows in a schematic fashion the nature of the periodic repeating structure .
Best Mode for Carrying Out the Invention
Embodiments of the present invention and their technical advantages may be better understood by referring to Figure 1.
Referring now to Figure 1, which shows a simple representation of a junction of the present invention, a first component 102 of the junction is in contact with a second component 104. Component 104 has a surface that has a periodic repeating structure , as shown in Figure 2. Indent 206 has a width 208 and a depth 212 and the separation between the indents is 210. Preferably distances 208 and 210 are substantially equal . Preferably distance 208 is of the order of 2 μm or less . Experimental observations using a Kelvin probe indicate that the magnitude of a reduction in an apparent work function increases as distance 212 is reduced. Utilization of e-beam lithography to create structures of the kind shown in Figure 2 may allow indents to be formed in which distance 208 is 200 nm or less . Distance 212 is of the order of 20 nm or less , and is preferably of the order of 5 nm.
The dimensions of the repeating structure are such that the probability wave of an electron reflected from the bottom- of an indent of the periodic structure interferes destructively with the probability wave of an electron ^reflected from the surface . This leads to a change in work function, and consequently in built in potential of the junction. This leads to change in the opening voltage and the breakdown voltage of the junction, resulting in a junction with predefined properties . The configuration of the surface may resemble a corrugated pattern of squared-off, "u" -shaped ridges and/or valleys . Alternatively, the pattern may be a regular pattern of rectangular "plateaus " or "holes , " where the pattern resembles a checkerboard . The walls of said indents should be substantially perpendicular to one another, and the edges of the indents should be substantially sharp . Further, one of ordinary skill in the art will recognize that other configurations are possible that may produce the desired interference of wave function of electron. The surface configuration may be achieved using conventional approaches known in the art , including without limitation lithography and e-beam milling.
In Figure 1, component 104 may be a metal or a semiconductor . Component 102 may be a semiconductor or a metal when component 104 is a semiconductor, and is a semiconductor when component 104 is a metal . In addition, the metal may also comprise its oxide .
Component 102 may be fabricated by methods disclosed in our previous disclosures , or by other approaches known to the art .
The structure shown in Figure 1 may additionally comprise a third material 106 , which may be a metal or a semiconductor . Table 1 below shows the variations and combinations of junction materials that fall within the scope of the present invention.
Figure imgf000007_0001
Table 1 - variations and combinations of junction materials (M is metal;
SC is semiconductor) Industrial Applicability
The present invention results in a change in the built in potential of the junction (both in p-n and Schottky case) . This leads to a change in the opening voltage and breakdown voltage of the junction, and it allows a junction with predefined parameters to be fabricated . Such junctions are applicable in the fields of :
1. p-n diodes including : Bipolar transistors , Photodiodes , Solar batteries .
2. Schottky diodes including : Schottky transistors , Ohmic contacts .
3. Optical heterostructures including : Light diodes , Semiconductor Lasers .

Claims

Claims
1. A semiconductor junction comprising a first material and a second material , wherein a surface of one or both of said junction materials is characterized in that it has a periodically repeating structure having one or more indents of a depth less than approximately 10 nm and a width less than approximately 1 μm.
2. The semiconductor junction of claim 1 in which said depth is approximately 5 nm.
3. The semiconductor junction of claim 1 in which said width is less than approximately 100 nm.
4. The semiconductor junction of claim 1 wherein said first material is a metal .
5. The semiconductor junction of claim 1 wherein said second material is a metal .
6. The semiconductor junction of claim 1 wherein said first material is a semiconductor .
7. The semiconductor junction of claim 1 wherein said second material is a semiconductor .
8. A semiconductor device comprising one or more semiconductor junctions of claim 1.
9. A p-n diode comprising one or more semiconductor junctions of claim 1.
10. The p-n diode of claim 9 selected from the group consisting of : bipolar transistors , photodiodes , and solar batteries .
11. A Schottky diode comprising one or more semiconductor junctions of claim 1.
12. The Schottky diode of claim 11 selected from the group consisting of : Schottky transistors and Ohmic contacts .
13. An optical heterostructure comprising one or more semiconductor junctions of claim 1.
14. The optical heterostructure of claim 13 selected from the group consisting of : light diodes and semiconductor lasers .
PCT/US2006/002541 2005-01-24 2006-01-24 Method for modification of built in potential of diodes WO2006079084A2 (en)

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