WO2006078908A3 - Differential alternating phase shift mask optimization - Google Patents

Differential alternating phase shift mask optimization Download PDF

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Publication number
WO2006078908A3
WO2006078908A3 PCT/US2006/002046 US2006002046W WO2006078908A3 WO 2006078908 A3 WO2006078908 A3 WO 2006078908A3 US 2006002046 W US2006002046 W US 2006002046W WO 2006078908 A3 WO2006078908 A3 WO 2006078908A3
Authority
WO
WIPO (PCT)
Prior art keywords
design
mask
mask design
features
rules
Prior art date
Application number
PCT/US2006/002046
Other languages
French (fr)
Other versions
WO2006078908A2 (en
Inventor
Lars W Liebermann
Zachary Baumn
Original Assignee
Ibm
Lars W Liebermann
Zachary Baumn
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Lars W Liebermann, Zachary Baumn filed Critical Ibm
Priority to EP06719024A priority Critical patent/EP1849112A2/en
Priority to JP2007552287A priority patent/JP4755655B2/en
Priority to CN2006800028621A priority patent/CN101213547B/en
Publication of WO2006078908A2 publication Critical patent/WO2006078908A2/en
Publication of WO2006078908A3 publication Critical patent/WO2006078908A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof

Abstract

A method of mask design comprises creating a first mask design by aligning mask resolution enhancement technology (RET) features, such as alternating phase shifting regions or sub-resolution assist features, with critical width segments of the integrated circuit design, such that the first mask design meets manufacturability design rules, and creating a second mask design by aligning RET features with the critical width segments of the integrated circuit design, such that the second mask design meets lithographic design rules in regions local to the critical width segments. Features of the second mask design are identified that violate the manufacturability design rules, and then a third mask design is created, derived from the second mask design wherein the features of the second mask design that violate the manufacturability rules are selectively replaced by features from the first mask design so that the third mask design meets the manufacturability design rules.
PCT/US2006/002046 2005-01-21 2006-01-20 Differential alternating phase shift mask optimization WO2006078908A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP06719024A EP1849112A2 (en) 2005-01-21 2006-01-20 Differential alternating phase shift mask optimization
JP2007552287A JP4755655B2 (en) 2005-01-21 2006-01-20 Optimization of differential alternating phase shift mask
CN2006800028621A CN101213547B (en) 2005-01-21 2006-01-20 Differential alternating phase shift mask design method and system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/905,822 US7617473B2 (en) 2005-01-21 2005-01-21 Differential alternating phase shift mask optimization
US10/905,822 2005-01-21

Publications (2)

Publication Number Publication Date
WO2006078908A2 WO2006078908A2 (en) 2006-07-27
WO2006078908A3 true WO2006078908A3 (en) 2007-11-22

Family

ID=36692923

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/002046 WO2006078908A2 (en) 2005-01-21 2006-01-20 Differential alternating phase shift mask optimization

Country Status (6)

Country Link
US (2) US7617473B2 (en)
EP (1) EP1849112A2 (en)
JP (1) JP4755655B2 (en)
CN (1) CN101213547B (en)
TW (1) TW200710694A (en)
WO (1) WO2006078908A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7617473B2 (en) * 2005-01-21 2009-11-10 International Business Machines Corporation Differential alternating phase shift mask optimization
US20080028359A1 (en) * 2006-07-31 2008-01-31 Stefan Blawid Termination structure, a mask for manufacturing a termination structure, a lithographic process and a semiconductor device with a termination structure
US8875063B2 (en) 2010-10-11 2014-10-28 International Business Machines Corporation Mask layout formation
CN102289146B (en) * 2011-09-14 2012-12-05 北京理工大学 Method for optimizing two-phase phase shift mask based on generalized wavelet penalty function
US9223911B2 (en) 2014-01-30 2015-12-29 Globalfoundries Inc. Optical model employing phase transmission values for sub-resolution assist features
EP2952964A1 (en) * 2014-06-03 2015-12-09 Aselta Nanographics Method for determining the parameters of an ic manufacturing process by a differential procedure
KR102305092B1 (en) 2014-07-16 2021-09-24 삼성전자주식회사 Mask for photolithography and method for fabricating the same

Citations (2)

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Publication number Priority date Publication date Assignee Title
US4849369A (en) * 1986-08-21 1989-07-18 Commissariat A L'energie Atomique Method of making an EPROM memory cell
US6832364B2 (en) * 2002-10-03 2004-12-14 International Business Machines Corporation Integrated lithographic layout optimization

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KR20010024117A (en) * 1997-09-17 2001-03-26 뉴메리컬 테크날러쥐스 인코포레이티드 Design rule checking system and method
US6335128B1 (en) 1999-09-28 2002-01-01 Nicolas Bailey Cobb Method and apparatus for determining phase shifts and trim masks for an integrated circuit
US6569574B2 (en) 1999-10-18 2003-05-27 Micron Technology, Inc. Methods of patterning radiation, methods of forming radiation-patterning tools, and radiation-patterning tools
US6503666B1 (en) 2000-07-05 2003-01-07 Numerical Technologies, Inc. Phase shift masking for complex patterns
JP4064617B2 (en) * 2000-10-26 2008-03-19 株式会社東芝 Mask pattern correction method, mask pattern correction apparatus, recording medium storing mask pattern correction program, and method of manufacturing semiconductor device
US6573010B2 (en) 2001-04-03 2003-06-03 Numerical Technologies, Inc. Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
US6703167B2 (en) * 2001-04-18 2004-03-09 Lacour Patrick Joseph Prioritizing the application of resolution enhancement techniques
US6569583B2 (en) * 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
US6821689B2 (en) * 2002-09-16 2004-11-23 Numerical Technologies Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
US7172838B2 (en) * 2002-09-27 2007-02-06 Wilhelm Maurer Chromeless phase mask layout generation
US7229722B2 (en) * 2004-01-28 2007-06-12 International Business Machines Corporation Alternating phase shift mask design for high performance circuitry
US7175942B2 (en) * 2004-02-05 2007-02-13 International Business Machines Corporation Method of conflict avoidance in fabrication of gate-shrink alternating phase shifting masks
JP2007536581A (en) * 2004-05-07 2007-12-13 メンター・グラフィクス・コーポレーション Integrated circuit layout design method using process variation band
KR100716990B1 (en) 2005-01-05 2007-05-14 삼성전자주식회사 Liquid crystal device for compensating aberration and optical pickup and optical recording and/or reproducing apparatus employing it
US7617473B2 (en) * 2005-01-21 2009-11-10 International Business Machines Corporation Differential alternating phase shift mask optimization

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849369A (en) * 1986-08-21 1989-07-18 Commissariat A L'energie Atomique Method of making an EPROM memory cell
US6832364B2 (en) * 2002-10-03 2004-12-14 International Business Machines Corporation Integrated lithographic layout optimization

Also Published As

Publication number Publication date
CN101213547A (en) 2008-07-02
EP1849112A2 (en) 2007-10-31
WO2006078908A2 (en) 2006-07-27
JP4755655B2 (en) 2011-08-24
US20060166105A1 (en) 2006-07-27
US20100017780A1 (en) 2010-01-21
US8181126B2 (en) 2012-05-15
CN101213547B (en) 2012-05-09
JP2008529066A (en) 2008-07-31
TW200710694A (en) 2007-03-16
US7617473B2 (en) 2009-11-10

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