WO2006078791A3 - Systems, masks and methods for printing contact holes and other patterns - Google Patents

Systems, masks and methods for printing contact holes and other patterns Download PDF

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Publication number
WO2006078791A3
WO2006078791A3 PCT/US2006/001854 US2006001854W WO2006078791A3 WO 2006078791 A3 WO2006078791 A3 WO 2006078791A3 US 2006001854 W US2006001854 W US 2006001854W WO 2006078791 A3 WO2006078791 A3 WO 2006078791A3
Authority
WO
WIPO (PCT)
Prior art keywords
masks
contact holes
patterns
methods
systems
Prior art date
Application number
PCT/US2006/001854
Other languages
French (fr)
Other versions
WO2006078791A2 (en
Inventor
Danping Peng
Yong Liu
Daniel S Abrams
Original Assignee
Luminescent Technologies Inc
Danping Peng
Yong Liu
Daniel S Abrams
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Luminescent Technologies Inc, Danping Peng, Yong Liu, Daniel S Abrams filed Critical Luminescent Technologies Inc
Publication of WO2006078791A2 publication Critical patent/WO2006078791A2/en
Publication of WO2006078791A3 publication Critical patent/WO2006078791A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Abstract

Contact hole patterns are disclosed having a plurality of peripheral regions formed around a target area in which a contact hole is to be formed. The peripheral regions visually resemble 'lobes' or 'leaves' extending outwards towards the periphery of the target area. The lobes may be disjoint or connected to each other. Present methods can be used to prepare masks for printing contact holes on wafers, as well as to prepare design patterns for laser-writers or direct- write lithography in order to print contact holes on masks or directly on wafers. The methods apply to both binary and phase-shift mask designs with varying illuminations.
PCT/US2006/001854 2005-01-18 2006-01-18 Systems, masks and methods for printing contact holes and other patterns WO2006078791A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US64527605P 2005-01-18 2005-01-18
US60/645,276 2005-01-18
US72365305P 2005-10-04 2005-10-04
US60/723,653 2005-10-04

Publications (2)

Publication Number Publication Date
WO2006078791A2 WO2006078791A2 (en) 2006-07-27
WO2006078791A3 true WO2006078791A3 (en) 2006-12-28

Family

ID=36692858

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/001854 WO2006078791A2 (en) 2005-01-18 2006-01-18 Systems, masks and methods for printing contact holes and other patterns

Country Status (4)

Country Link
US (1) US20060172204A1 (en)
KR (1) KR20070100896A (en)
TW (1) TW200639590A (en)
WO (1) WO2006078791A2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7698665B2 (en) 2003-04-06 2010-04-13 Luminescent Technologies, Inc. Systems, masks, and methods for manufacturable masks using a functional representation of polygon pattern
US7703049B2 (en) 2005-10-06 2010-04-20 Luminescent Technologies, Inc. System, masks, and methods for photomasks optimized with approximate and accurate merit functions
US7788627B2 (en) 2005-10-03 2010-08-31 Luminescent Technologies, Inc. Lithography verification using guard bands
US7793253B2 (en) 2005-10-04 2010-09-07 Luminescent Technologies, Inc. Mask-patterns including intentional breaks
US7921385B2 (en) 2005-10-03 2011-04-05 Luminescent Technologies Inc. Mask-pattern determination using topology types

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7124394B1 (en) 2003-04-06 2006-10-17 Luminescent Technologies, Inc. Method for time-evolving rectilinear contours representing photo masks
JP2005116756A (en) * 2003-10-07 2005-04-28 Fujitsu Ltd Semiconductor device and its manufacturing method
US7707541B2 (en) 2005-09-13 2010-04-27 Luminescent Technologies, Inc. Systems, masks, and methods for photolithography
US7721247B2 (en) * 2006-12-28 2010-05-18 Macronix International Co., Ltd. Side lobe image searching method in lithography
US8028252B2 (en) * 2007-09-14 2011-09-27 Luminescent Technologies Inc. Technique for determining mask patterns and write patterns
US20090191468A1 (en) * 2008-01-29 2009-07-30 International Business Machines Corporation Contact Level Mask Layouts By Introducing Anisotropic Sub-Resolution Assist Features
US20090250760A1 (en) * 2008-04-02 2009-10-08 International Business Machines Corporation Methods of forming high-k/metal gates for nfets and pfets
TWI427677B (en) * 2008-05-12 2014-02-21 Richtek Technology Corp Used to reduce the embossing of the metal mask, hole layout and methods
US7975246B2 (en) * 2008-08-14 2011-07-05 International Business Machines Corporation MEEF reduction by elongation of square shapes
CN102219177A (en) * 2010-04-14 2011-10-19 原相科技股份有限公司 Micro electro mechanical system photomask and method for improving topological appearance of tungsten sediment
US20170053058A1 (en) * 2015-08-21 2017-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Model-based rule table generation
CN112506000A (en) * 2019-09-16 2021-03-16 长鑫存储技术有限公司 Improved OPC method and mask pattern manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020177050A1 (en) * 2001-05-24 2002-11-28 Nec Corporation Phase shift mask and design method therefor
US6596466B1 (en) * 2000-01-25 2003-07-22 Cypress Semiconductor Corporation Contact structure and method of forming a contact structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000101222A (en) * 1998-09-21 2000-04-07 Mitsubishi Electric Corp Printed wiring board and producing method therefor
IT1313154B1 (en) * 1999-08-05 2002-06-17 St Microelectronics Srl Attenuated phase shifting mask used in integrated circuit manufacture, has partially transparent layer made of phase shift material having octagonal window, placed over quartz plate
US6803155B2 (en) * 2001-07-31 2004-10-12 Micron Technology, Inc. Microlithographic device, microlithographic assist features, system for forming contacts and other structures, and method of determining mask patterns

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596466B1 (en) * 2000-01-25 2003-07-22 Cypress Semiconductor Corporation Contact structure and method of forming a contact structure
US20020177050A1 (en) * 2001-05-24 2002-11-28 Nec Corporation Phase shift mask and design method therefor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7698665B2 (en) 2003-04-06 2010-04-13 Luminescent Technologies, Inc. Systems, masks, and methods for manufacturable masks using a functional representation of polygon pattern
US7788627B2 (en) 2005-10-03 2010-08-31 Luminescent Technologies, Inc. Lithography verification using guard bands
US7921385B2 (en) 2005-10-03 2011-04-05 Luminescent Technologies Inc. Mask-pattern determination using topology types
US7793253B2 (en) 2005-10-04 2010-09-07 Luminescent Technologies, Inc. Mask-patterns including intentional breaks
US7703049B2 (en) 2005-10-06 2010-04-20 Luminescent Technologies, Inc. System, masks, and methods for photomasks optimized with approximate and accurate merit functions

Also Published As

Publication number Publication date
KR20070100896A (en) 2007-10-12
US20060172204A1 (en) 2006-08-03
WO2006078791A2 (en) 2006-07-27
TW200639590A (en) 2006-11-16

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