WO2006078299A3 - Integrated nanotube and field effect switching device - Google Patents

Integrated nanotube and field effect switching device Download PDF

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Publication number
WO2006078299A3
WO2006078299A3 PCT/US2005/018535 US2005018535W WO2006078299A3 WO 2006078299 A3 WO2006078299 A3 WO 2006078299A3 US 2005018535 W US2005018535 W US 2005018535W WO 2006078299 A3 WO2006078299 A3 WO 2006078299A3
Authority
WO
WIPO (PCT)
Prior art keywords
switching device
devices
field effect
nanotube
switching
Prior art date
Application number
PCT/US2005/018535
Other languages
French (fr)
Other versions
WO2006078299A2 (en
Inventor
Claude L Bertin
Original Assignee
Nantero Inc
Claude L Bertin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc, Claude L Bertin filed Critical Nantero Inc
Priority to EP05856763A priority Critical patent/EP1776763B1/en
Priority to CA2570486A priority patent/CA2570486C/en
Priority to DE602005012110T priority patent/DE602005012110D1/en
Publication of WO2006078299A2 publication Critical patent/WO2006078299A2/en
Publication of WO2006078299A3 publication Critical patent/WO2006078299A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/54—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes
    • H03K17/545—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes using microengineered devices, e.g. field emission devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit

Abstract

Hybrid switching devices (10) integrate nanotube switching elements (20) with field effect devices (30), such as NFETs and PFETs. A switching device forms and unforms a conductive channel from the signal input to the output subject to the relative state of the control input. In embodiments of the invention, the conductive channel includes a nanotube channel element (20) and a field modulatable semiconductor channel element (30). The switching device may include a nanotube switching element and a field effect device electrically disposed in series. According to one aspect of the invention, an integrated switching device is a four-terminal device with a signal input terminal (25), a control input terminal (40’), a second input terminal (40), and an output terminal (45). The devices may be non-volatile. The devices can form the basis for a hybrid NT-FET logic family and can be used to implement any Boolean logic circuit.
PCT/US2005/018535 2004-06-18 2005-05-26 Integrated nanotube and field effect switching device WO2006078299A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP05856763A EP1776763B1 (en) 2004-06-18 2005-05-26 Integrated nanotube and field effect switching device
CA2570486A CA2570486C (en) 2004-06-18 2005-05-26 Integrated nanotube and field effect switching device
DE602005012110T DE602005012110D1 (en) 2004-06-18 2005-05-26 SWITCHING DEVICE WITH INTEGRATED NANO-EYE AND FIELD EFFECT TECHNOLOGY

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US58101504P 2004-06-18 2004-06-18
US60/581,015 2004-06-18
US11/033,089 US7288970B2 (en) 2004-06-18 2005-01-10 Integrated nanotube and field effect switching device
US11/033,089 2005-01-10

Publications (2)

Publication Number Publication Date
WO2006078299A2 WO2006078299A2 (en) 2006-07-27
WO2006078299A3 true WO2006078299A3 (en) 2006-10-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/018535 WO2006078299A2 (en) 2004-06-18 2005-05-26 Integrated nanotube and field effect switching device

Country Status (6)

Country Link
US (3) US7288970B2 (en)
EP (1) EP1776763B1 (en)
AT (1) ATE419676T1 (en)
CA (1) CA2570486C (en)
DE (1) DE602005012110D1 (en)
WO (1) WO2006078299A2 (en)

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US7564269B2 (en) 2009-07-21
CA2570486A1 (en) 2006-07-27
WO2006078299A2 (en) 2006-07-27
US7859311B2 (en) 2010-12-28
US20090295431A1 (en) 2009-12-03
EP1776763A4 (en) 2007-10-17
US20080218210A1 (en) 2008-09-11
US7288970B2 (en) 2007-10-30
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ATE419676T1 (en) 2009-01-15
US20060061389A1 (en) 2006-03-23
EP1776763B1 (en) 2008-12-31

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