WO2006068359A1 - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- WO2006068359A1 WO2006068359A1 PCT/KR2005/002332 KR2005002332W WO2006068359A1 WO 2006068359 A1 WO2006068359 A1 WO 2006068359A1 KR 2005002332 W KR2005002332 W KR 2005002332W WO 2006068359 A1 WO2006068359 A1 WO 2006068359A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- combination
- emitting device
- phosphors
- emitting diode
- Prior art date
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- 239000010949 copper Substances 0.000 claims abstract description 87
- 229910052802 copper Inorganic materials 0.000 claims abstract description 79
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 65
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 47
- 150000001875 compounds Chemical class 0.000 claims abstract description 30
- 150000004645 aluminates Chemical class 0.000 claims abstract description 20
- 150000004760 silicates Chemical class 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 9
- 235000021317 phosphate Nutrition 0.000 claims abstract description 9
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 62
- 229910052748 manganese Inorganic materials 0.000 claims description 16
- 229910052693 Europium Inorganic materials 0.000 claims description 15
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 15
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 14
- 229910052772 Samarium Inorganic materials 0.000 claims description 14
- 229910052788 barium Inorganic materials 0.000 claims description 14
- 229910052790 beryllium Inorganic materials 0.000 claims description 14
- 229910052797 bismuth Inorganic materials 0.000 claims description 14
- 229910052793 cadmium Inorganic materials 0.000 claims description 14
- 229910052791 calcium Inorganic materials 0.000 claims description 14
- 229910052746 lanthanum Inorganic materials 0.000 claims description 14
- 229910052745 lead Inorganic materials 0.000 claims description 14
- 229910052749 magnesium Inorganic materials 0.000 claims description 14
- 229910052706 scandium Inorganic materials 0.000 claims description 14
- 229910052712 strontium Inorganic materials 0.000 claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 14
- 229910052727 yttrium Inorganic materials 0.000 claims description 14
- 229910052725 zinc Inorganic materials 0.000 claims description 14
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 12
- 229910052771 Terbium Inorganic materials 0.000 claims description 12
- 229910052792 caesium Inorganic materials 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 12
- 229910052744 lithium Inorganic materials 0.000 claims description 12
- 229910052700 potassium Inorganic materials 0.000 claims description 12
- 229910052701 rubidium Inorganic materials 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 229910052708 sodium Inorganic materials 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 229910052787 antimony Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229910052684 Cerium Inorganic materials 0.000 claims description 8
- 229910052691 Erbium Inorganic materials 0.000 claims description 8
- 229910052689 Holmium Inorganic materials 0.000 claims description 8
- 229910052765 Lutetium Inorganic materials 0.000 claims description 8
- 229910052779 Neodymium Inorganic materials 0.000 claims description 8
- 229910052775 Thulium Inorganic materials 0.000 claims description 8
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- 239000003566 sealing material Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 239000007858 starting material Substances 0.000 description 30
- 239000000203 mixture Substances 0.000 description 23
- 238000002360 preparation method Methods 0.000 description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 20
- 230000005284 excitation Effects 0.000 description 20
- 230000004907 flux Effects 0.000 description 14
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 13
- 238000010304 firing Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000003801 milling Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000009877 rendering Methods 0.000 description 4
- 229910018626 Al(OH) Inorganic materials 0.000 description 3
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 3
- 229910018557 Si O Inorganic materials 0.000 description 3
- 229910004283 SiO 4 Inorganic materials 0.000 description 3
- 150000004679 hydroxides Chemical class 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000002798 polar solvent Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical class O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ITVPBBDAZKBMRP-UHFFFAOYSA-N chloro-dioxido-oxo-$l^{5}-phosphane;hydron Chemical class OP(O)(Cl)=O ITVPBBDAZKBMRP-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 235000015250 liver sausages Nutrition 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7734—Aluminates
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- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/664—Halogenides
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- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/666—Aluminates; Silicates
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- C09K11/74—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
- C09K11/75—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth containing antimony
- C09K11/751—Chalcogenides
- C09K11/753—Chalcogenides with alkaline earth metals
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- C09K11/74—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
- C09K11/75—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth containing antimony
- C09K11/755—Halogenides
- C09K11/756—Halogenides with alkali or alkaline earth metals
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77344—Aluminosilicates
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
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- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/4809—Loop shape
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- H01L2224/73265—Layer and wire connectors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Definitions
- the invention relates to light emitting devices and more particularly to light emitting devices including at least one light-emitting diode and phosphor, the phosphor including lead and/or copper doped chemical compounds and converting the wavelength of light.
- LEDs Light emitting devices
- LEDs which used to be used for electronic devices, are now used for automobiles and illumination products. Since light emitting devices have superior electrical and mechanical characteristics, demands for light emitting devices have been increased. In connection to this, interests in white LEDs are increasing as an alternative to fluorescent lamps and incandescent lamps.
- realization of white LED technology is to put the phosphor on the light- emitting diode, and mix the primary emission from the light emitting diode and the secondary emission from the phosphor, which converts the wavelength.
- a blue light emitting diode which is capable of emitting a peak wavelength at 450-490 nm
- YAG group material which absorbs light from the blue light emitting diode and emits yellowish light (mostly), which may have different wavelength from that of the absorbed light
- the present invention is conceived to solve the aforementioned problems in the prior art. It is an object of the present invention to provide a light emitting device capable of providing wide range of color temperature from about 2,00OK to about 8,000K or about 10,000K and/or color rendering index of greater than about 90. [6] Another object of the present invention is to provide a light emitting device in which desired color temperature or specific color coordination can be easily embodied.
- An additional object of the present invention is to provide a light emitting device with improved luminescent properties and also with improved stability against water, humidity as well as other polar solvents.
- a device for emitting light.
- the device can include a substrate, a plurality of electrodes provided on the substrate, a light emitting diode configured to emit light, the light emitting diode being provided on one of the plurality of electrodes, phosphors configured to change a wavelength of the light, the phosphors substantially covering at least a portion of the light emitting diode, and an electrically conductive device configured to connect the light emitting diode with another of the plurality of electrodes.
- a light emitting device can include a plurality of leads , a diode holder provided at the end of one of the plurality of lead, a light emitting diode provided in the diode holder, the light emitting diode including a plurality of electrodes, phosphors configured to change a wavelength of the light, the phosphors substantially covering at least a portion of the light emitting diode; and an electrically conductive device configured to connect the light emitting device with another of the plurality of leads .
- a light emitting device may include a housing, a heat sink at least partially provided in the housing, a plurality of lead frames provided on the heat sink, a light emitting diode mounted on one of the plurality of lead frames, phosphors configured to change a wavelength of the light, the phosphors substantially covering at least a portion of the light emitting diode, and an electrically conductive device configured to connect the light emitting diode with another of the plurality of lead frames.
- the phosphor in consistent with this invention may include aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates, lead and/or copper doped germanates, lead and/or copper doped germanate- silicates, lead and/or copper doped phosphates, or any combination thereof.
- Formulas for phosphors consistent with this invention are also provided.
- FIG. 1 shows a side cross-sectional view of an illustrative embodiment of a portion of a chip-type package light emitting device consistent with this invention
- FIG. 2 shows a side cross-sectional view of an illustrative embodiment of a portion of a top-type package light emitting device consistent with this invention
- FIG. 3 shows a side cross-sectional view of an illustrative embodiment of a portion of a lamp-type package light emitting device consistent with this invention
- FIG. 4 shows a side cross-sectional view of an illustrative embodiment of a portion of a light emitting device for high power consistent with this invention
- FIG. 5 shows a side cross-sectional view of another illustrative embodiment of a portion of a light emitting device for high power consistent with this invention
- Fig. 6 shows emitting spectrum of a light emitting device with luminescent material consistent with this invention.
- Fig. 7 shows emitting spectrum of the light emitting device with luminescent material according to another embodiment of the invention.
- Fig. 1 shows a side cross-sectional view of an illustrative embodiment of a portion of a chip-type package light emitting device consistent with this invention.
- the chip- type package light emitting device may comprise at least one light emitting diode and a phosphorescent substance .
- Electrodes 5 may be formed on both sides of substrate 1.
- Light emitting diode 6 emitting light may be mounted on one of the electrodes 5.
- Light emitting diode 6 may be mounted on electrode 5 through electrically conductive paste 9.
- An electrode of light emitting diode 6 may be connected to electrode pattern 5 via an electrically conductive wire 2.
- Light emitting diodes may emit light with a wide range of wavelengths, for example, from ultraviolet light to visible light.
- a UV light emitting diode and/or blue light emitting diode may be use.
- Phosphor i.e., a phosphorescent substance, 3 may be placed on the top and side faces of the light emitting diode 6.
- the phosphor in consistent with this invention may include lead and/or copper doped aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates , lead and/or copper doped germanates, lead and/or copper doped germanate- silicates, lead and/or copper doped phosphates, or any combination thereof.
- Phosphor 3 converts the wavelength of the light from the light emitting diode 6 to another wavelength or other wavelengths. In one embodiment consistent with this invention, the light is in a visible light range after the conversion.
- P hosphor 3 may be applied to light emitting diode 6 after mixing phosphor 3 with a hardening resin.
- the hardening resin including phosphor 3 may also be applied to the bottom of light emitting diode 6 after mixing phosphor 3 with electrically conductive paste 9.
- the light emitting diode 6 mounted on substrate 1 may be sealed with one or more sealing materials 10.
- Phosphor 3 may be placed on the top and side faces of light emitting diode 6.
- Phosphor 3 can also be distributed in the hardened sealing material during the production. Such a manufacturing method is described in U.S. Patent No. 6,482,664, which is hereby incorporated by reference in its entirety.
- Phosphor 3 may comprise lead and/or copper doped chemical compound(s).
- Phosphor 3 may include one or more single chemical compounds.
- the single compound may have an emission peak of, for example, from about 440nm to about 500nm, from about 500nm to about 590nm, or from about 580nm to 700nm.
- Phosphor 3 may include one or more single phosphors, which may have an emission peak as exemplified above.
- light emitting diode 6 may emit primary light when light emitting diode 6 receives power from a power supply.
- the primary light then may stimulate phosphor(s) 3, and phosphor(s) 3 may convert the primary light to a light with longer wavelength(s) (a secondary light).
- the primary light from the light emitting diode 6 and the secondary light from the phosphors 3 are diffused and mixed together so that a predetermined color of light in visible spectrum may be emitted from light emitting diode 6.
- more than one light emitting diodes that have different emission peaks can be mounted together.
- specific color of light, color temperature, and CRI can be provided.
- the light emitting diode 6 and the compound included in phosphor 3 are properly controlled then desired color temperature or specific color coordination can be provided, especially, wide range of color temperature, for example, from about 2,00OK to about 8,000K or about 10,000K and/or color rendering index of greater than about 90. Therefore, the light emitting devices consistent with this invention may be used for electronic devices such as home appliances, stereos, telecommunication devices, and for interior/exterior custom displays. The light emitting devices consistent with this invention may also be used for automobiles and illumination products because they provide similar color temperatures and CRI to those of the visible light.
- Fig. 2 shows a side cross-sectional view of an illustrative embodiment of a portion of a top-type package light emitting device consistent with this invention.
- a top -type package light emitting device consistent with this invention may have a similar structure as that of the chip type package light emitting device 40 of Fig. 1.
- the top- type package device may have reflector 31 which may reflect the light from the light emitting diode 6 to the desire direction.
- top -type package light emitting device 50 more than one light emitting diodes can be mounted. Each of such light emitting diodes may have a different peak wavelength from that of others.
- Phosphor 3 may comprise a plurality of single compounds with different emission peak. The proportion of each of such plurality of compounds may be regulated. Such a phosphor may be applied to the light emitting diode and/or uniformly distributed in the hardening material of the reflector 31.
- the phosphor in consistent with this invention may include lead and/or copper doped aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates, lead and/or copper doped germanates, lead and/or copper doped germanate- silicates, lead and/or copper doped phosphates, or any combination thereof .
- Fig. 1 or Fig. 2 can include a metal substrate, which may have good heat conductivity. Such a light emitting device may easily dissipate the heat from the light emitting diode. Therefore, light emitting devices for high power may be manufactured. If a heat sink is provided beneath the metal substrate, the heat from the light emitting diode may be dissipated more effectively.
- Fig. 3 shows a side cross-sectional view of an illustrative embodiment of a portion of a lamp-type package light emitting device consistent with this invention.
- Lamp type light emitting device 60 may have a pair of leads 51, 52, and a diode holder 53 may be formed at the end of one lead.
- Diode holder 53 may have a shape of cup, and one or more light emitting diodes 6 may provided in the diode holder 53. When a number of light emitting diodes are provided in the diode holder 53, each of them may have a different peak wavelength from that of others.
- An electrode of light emitting diode 6 may be connected to lead 52 by, for example, electrically conductive wire 2.
- phosphor 3 Regular volume of phosphor 3, which may be mixed in the epoxy resin, may be provided in diode holder 53. As explained more fully below, phosphor 3 may include lead and/or copper doped components.
- the diode holder may include the light emitting diode 6 and the phosphor 3 may be sealed with hardening material such as epoxy resin or silicon resin.
- the lamp type package light emitting device may have more than one pair of electrode pair leads.
- FIG. 4 shows a side cross-sectional view of an illustrative embodiment of a portion of a light emitting device for high power consistent with this invention.
- Heat sink 71 may be provided inside of housing 73 of the light emitting device for high power 70, and it may be partially exposed to outside.
- a pair of lead frame 74 may protrude from housing 73.
- One or more light emitting diodes may be mounted one lead frame 74, and an electrode of the light emitting diode 6 and another lead frame 74 may be connected via electrically conductive wire. Electrically conductive pate 9 may be provided between light emitting diode 6 and lead frame 74. The phosphor 3 may be placed on top and side faces of light emitting diode 6.
- FIG. 5 shows a side cross-sectional view of another illustrative embodiment of a portion of a light emitting device for high power consistent with this invention.
- Light emitting device for high power 80 may have housing 63, which may contain light emitting diodes 6, 7, phosphor 3 arranged on the top and side faces of light emitting diodes 6, 7, one or more heat sinks 61, 62, and one or more lead frames 64.
- the lead frames 64 may receive power from a power supplier and may protrude from housing 63.
- a lens may be combined with housing 63, 73.
- one or more light emitting diodes can be used selectively and the phosphor can be regulated depending on the light emitting diode.
- the phosphor may include lead and/or copper doped components.
- a light emitting device for high power consistent with this invention may have a radiator (not shown) and/or heat sink(s). Air or a fan may be used to cool the radiator.
- the light emitting devices consistent with this invention is not limited to the structures described above, and the structures can be modified depending on the characteristics of light emitting diodes, phosphor, wavelength of light, and also applications. Moreover, new part can be added to the structures.
- Phosphor in consistence with this invention may include lead and/or copper doped chemical compounds.
- the phosphor may be excited by UV and/or visible light, for example, blue light.
- the compound may include Aluminate, Silicate, Antimonate, Germanate, Germanate-silicate, or Phosphate type compounds.
- Aluminate type compounds may comprise compounds having formula (1), (2), and/or (5)
- M' may be Pb, Cu, and/or any combination thereof;
- M" may be one or more monovalent elements, for example, Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof;
- M '" may be one or more divalent elements, for example, Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof;
- M"" may be one or more trivalent elements, for example, Sc, B, Ga, In, and/or any combination thereof;
- M may be Si, Ge, Ti, Zr, Mn, V, Nb, Ta, W, Mo, and/or any combination thereof;
- M may be Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or any combination thereof;
- X may be F, Cl, Br, J, and/or any combination thereof; 0
- M' may be Pb, Cu, and/or any combination thereof;
- M" may be one or more monovalent elements, for example, Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof;
- M'" may be one or more divalent elements, for example, Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof;
- M"" may be Bi, Sn, Sb, Sc, Y, La, In, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and any combination thereof;
- X may be F, Cl, Br, J, and any combination thereof; 0 ⁇ a ⁇ 4;0 ⁇ b ⁇ 2;0 ⁇ c ⁇ 2;0 ⁇ d ⁇ l;0 ⁇ e ⁇ l;0 ⁇ f ⁇ l;0 ⁇ g ⁇ l;0 ⁇ h ⁇ 2;l ⁇ x ⁇ 2;andl ⁇ y ⁇ 5.
- the preparation of copper as well as lead doped luminescent materials may be a basic solid state reaction. Pure starting materials without any impurities, e.g. iron, may be used. Any starting material which may transfer into oxides via a heating process may be used to form oxygen dominated phosphors.
- the starting materials in the form of oxides, hydroxides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, e.g., H BO .
- the mixture may be fired in an alumina crucible in a first step at about 1,200 0 C for about one hour. After milling the pre-fired materials a second firing step at about 1,45O 0 C in a reduced atmosphere for about 4 hours may be followed. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum of about 494 nm.
- TTaabbllee 11 ccooppppeerr ddooppeedd EEuu ++ --aaccttiivvaatteedd aalluummiinnaatte compared with Eu + -activated aluminate without copper at about 400 nm excitation wavelength
- Starting materials PbO, SrCO , Al O , Eu O , and/or any combination thereof.
- the starting materials in form of very pure oxides, carbonates, or other components which may decompose thermically into oxides, may be mixed in stoichiometric proportion together with small amounts of flux, for example, H BO .
- the mixture may be fired in an alumina crucible at about 1,200 0 C for about one hour in the air. After milling the pre-fired materials a second firing step at about 1,45O 0 C in air for about 2 hours and in a reduced atmosphere for about 2 hours may be followed. Then the material may be milled, washed, dried, and sieved.
- the resulting luminescent material may have an emission maximum of from about 494.5 nm.
- Table 2 lead doped Eu + -activated aluminate compared with Eu + -activated aluminate without lead at about 400 nm excitation wavelength
- Table 3 optical properties of some copper and/or lead doped aluminates excitable by long wave ultraviolet and/or by visible light and their luminous density in % at 400 nm excitation wavelength
- M' may be Pb, Cu, and/or any combination thereof; M" may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M'" may be B, Ga, In, and/or any combination thereof; M"" may be Si, Ge, Ti, Zr, Hf, and/or any combination thereof ; M may be Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho,
- the starting materials in the form of, for example, pure oxides and/or as carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, AlF .
- the mixture may be fired in an alumina crucible at about 1,25O 0 C in a reduced atmosphere for about 3 hours. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum of about 521.5 nm.
- the starting materials in the form of, for example, pure oxides, hydroxides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, AlF .
- the mixture may be fired in an alumina crucible at about 1,42O 0 C in a reduced atmosphere for about 2 hours. After that the material may be milled, washed, dried, and sieved.
- the resulting luminescent material may have an emission maximum of about 452 nm.
- the luminescent material having formula (8) [85] Pb 0 1 Sr0 9 Al 2O 4 : Eu (8) [86] Starting materials: PbO, SrCO , Al(OH) , Eu O , and/or any combination thereof. [87] The starting materials in form of, for example, pure oxides, hydroxides, and/or carbonates may be mixed in stochiometric proportions together with small amounts of flux, for example , H BO . The mixture may be fired in an alumina crucible at about 1,000 0 C for about 2 hours in the air. After milling the pre-fired materials a second firing step at about 1,42O 0 C in the air for about 1 hour and in a reduced atmosphere for about 2 hours may be followed. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum of about 521 nm.
- a lead and/or copper doped silicates having formula (9) [94] aa((MM'O ( )-b(MO)-c(M"'X)-d(M"' 0)-e(M"" O >f(M O >g(SiO )• h(M O )
- M' may be Pb, Cu, and/or any combination thereof;
- M" may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof;
- M'" may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof;
- M"" may be Al, Ga, In, and/or any combination thereof;
- M may be Ge, V, Nb, Ta, W, Mo, Ti, Zr, Hf, and/or any combination thereof;
- M may be Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd,
- X may be F, Cl, Br, J, and any combination thereof; 0 ⁇ a ⁇ 2; 0 ⁇ b ⁇ 8; 0 ⁇ c ⁇ 4; 0 ⁇ d ⁇ 2; 0 ⁇ e ⁇ 2; 0 ⁇ f ⁇ 2; 0 ⁇ g ⁇ 10; 0 ⁇ h ⁇ 5; 1 ⁇ o ⁇ 2; 1 ⁇ p ⁇ 5; 1 ⁇ x ⁇ 2; and 1 ⁇ y ⁇ 5.
- the starting materials in the form of pure oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH 4 Cl.
- the mixture may be fired in an alumina crucible at about 1,200 0 C in an inert gas atmosphere (e.g., N or noble gas) for about 2 hours. Then the material may be milled. After that, the material may be fired in an alumina crucible at about 1,200 0 C in a slightly reduced atmosphere for about 2 hours. Then, the material may be milled, washed, dried, and sieved. The resulting luminescent material may have an emission maximum at about 592 nm.
- an inert gas atmosphere e.g., N or noble gas
- Table 8 copper doped Eu + - activated silicate compared with Eu + -activated silicate without copper at about 400 nm excitation wavelength
- the starting materials in the form of very pure oxides and carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH 4 Cl.
- the mixture may be fired in an alumina crucible at about 1,100 0 C in a reduced atmosphere for about 2 hours. Then the material may be milled. After that the material may be fired in an alumina crucible at about 1,235 0 C in a reduced atmosphere for about 2 hours. Then that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum at about 467 nm.
- Table 9 copper doped Eu + -activated silicate compared with Eu + -activated silicate without copper at 400 nm excitation wavelength
- the starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH 4 Cl.
- the mixture may be fired in an alumina crucible at about 1,000 0 C for about 2 hours in the air. After milling the pre-fired materials a second firing step at 1,22O 0 C in air for 4 hours and in reducing atmosphere for 2 hours may be followed. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum at about 527 nm.
- Table 10 lead doped Eu + -activated silicate compared with Eu + -activated silicate without lead at about 400 nm excitation wavelength
- a second firing step at about 1,22O 0 C in the air for about 4 hours and in a reduced atmosphere for about 1 hour may be followed. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 492 nm.
- Table 11 lead doped Eu + -activated chlorosilicate compared with Eu + -activated chlorosilicate without lead at 400 nm excitation wavelength [120]
- Table 12 optical properties of some copper and/or lead doped rare earth activated silicates excitable by long wave ultraviolet and/or by visible light and their luminous density in % at about 400 nm excitation wavelength
- M' may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof
- M" may be Bi, Sn, Sc, Y, La, Pr, Sm, Eu, Tb, Dy, Gd, and/or any combination thereof
- X may be F, Cl, Br, J, and/or any combination thereof; 0 ⁇ a ⁇ 2;0 ⁇ b ⁇ 2;0 ⁇ c ⁇ 4;0 ⁇ d ⁇ 8;0 ⁇ e ⁇ 8;0 ⁇ f ⁇ 2;l ⁇ x ⁇ 2; and 1 ⁇ y ⁇ 5.
- the starting materials in the form of oxides may be mixed in stoichiometric proportion together with small amounts of flux.
- the mixture may be fired in an alumina crucible at about 985 0 C in the air for about 2 hours. After pre-firing the material may be milled again.
- the mixture may be fired in an alumina crucible at about 1,200 0 C in an atmosphere containing oxygen for about 8 hours. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum at about 626 nm.
- Table 13 copper doped antimonate compared with antimonate without copper at about 400 nm excitation wavelength
- the mixture may be fired in an alumina crucible at about 1,175 0 C in the air for about 4 hours and then in an oxygen-containing atmosphere for about 4 hours. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 637 nm.
- M' may be Pb, Cu, and/or any combination thereof; M" may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M'" may be Be, Mg, Ca, Sr, Ba, Zn, Cd, and/or any combination thereof; M"" may be Sc, Y, B, Al, La, Ga, In, and/or any combination thereof; M may be Si, Ti, Zr, Mn, V, Nb, Ta, W, Mo, and/or any combination thereof; M may be Bi, Sn, Pr, Sm, Eu, Gd, Dy, and/or any combination thereof ; X may be F, Cl, Br, J, and/or any combination thereof; 0 ⁇ a ⁇ 2; 0 ⁇ b ⁇ 2; 0 ⁇ c ⁇ 10; 0 ⁇ d ⁇ 10; 0 ⁇ e ⁇ 14; 0 ⁇ f ⁇ 14; 0 ⁇ g ⁇ 10; 0
- the starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH 4 Cl.
- the mixture may be fired in an alumina crucible at about 1,200 0 C in an oxygen-containing atmosphere for about 2 hours. Then, the material may be milled again.
- the mixture may be fired in an alumina crucible at about 1,200 0 C in oxygen containing atmosphere for about 2 hours. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum at about 655 nm.
- Table 16 lead doped Mn-activated germanate compared with Mn-activated germanate without lead at about 400 nm excitation wavelength
- Starting materials CuO, SrCO , GeO , SiO , MnCO , and/or any combination thereof
- the starting materials in the form of oxides and/or carbonates may be mixed in sto- ichiometric proportions together with small amounts of flux, for example, NH 4 Cl.
- the mixture may be fired in an alumina crucible at about 1,100 0 C in an oxygen-containing atmosphere for about 2 hours. Then, the material may be milled again.
- the mixture may be fired in an alumina crucible at about 1,18O 0 C in an oxygen-containing atmosphere for about 4 hours. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum at about 658 nm.
- Table 17 copper doped Mn- activated germanate- silicate compared with Mn- activated germanate-silicate without copper at 400 nm excitation wavelength
- Table 18 optical properties of some copper and/or lead doped germanate-silicates excitable by long wave ultraviolet and/or by visible light and their luminous density in % at about 400 nm excitation wavelength
- M' may be Pb, Cu, and/or any combination thereof; M" may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M'" may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M"" may be Sc, Y, B, Al, La, Ga, In, and/or any combination thereof; M may be Si, Ge, Ti, Zr, Hf, V, Nb, Ta, W, Mo, and/or any combination thereof; M may be Bi, Sn, Pr, Sm, Eu, Gd, Dy, Ce, Tb, and/or any combination thereof; X may be F, Cl, Br, J, and/or any combination thereof; 0 ⁇ a ⁇ 2; 0 ⁇ b ⁇ 12;0 ⁇ c ⁇ 16;0 ⁇ d ⁇ 3;0 ⁇ e ⁇ 5;0 ⁇ f ⁇ 3;0 ⁇ g ⁇ 2;0 ⁇ h ⁇ 2;l ⁇ x ⁇ 2; and 1
- the starting materials in the form of oxides, phosphates, and/or carbonates and chlorides may be mixed in stoichiometric proportions together with small amounts of flux.
- the mixture may be fired in an alumina crucible at about 1,24O 0 C in reducing atmosphere for about 2 hours. After that the material may be milled, washed, dried and sieved.
- the luminescent material may have an emission maximum at about 450 nm.
- Table 19 copper doped Eu + -activated chlorophosphate compared with Eu + - activated chlorophosphate without copper at about 400 nm excitation wavelength
- Table 20 copper and/or lead doped phosphates excitable by long wave ultraviolet and/or by visible light and their luminous density in % at about 400 nm excitation wavelength
- the phosphor of the light emitting device consistent with this invention can comprise aluminate, silicate, antimonate, germanate, phosphate type chemical compound, and any combination thereof.
- Fig. 6 is a one of the embodiment's emission spectrum according to the invention, which the phosphor is used for the light emitting device.
- the embodiment may have a light emitting diode with 405nm wavelength and the phosphor, which is mixture of the selected multiple chemical compounds in proper ratio.
- the phosphor may be composed of Cu 0 05 BaMg 1 95 Al 16 O 27 : Eu which may have peak wavelength at about 451 nm, Cu 0 03
- Mn + which may have peak wavelength at about 637nm, Pb 0 15 Ba 1 84 Zn 001 Si 0 99 Zr 0 01 O 4
- 02 3 8 14 25 which may have peak wavelength at about 494nm.
- part of the initial about 405nm wavelength emission light from the light emitting diode is absorbed by the phosphor, and it is converted to longer 2 n wavelength.
- the 1 st and 2 n light is mixed together and the desire emission is produced.
- the light emitting device convert the 1 st UV light of 405nm wavelength to wide spectral range of visible light, that is, white light, and at this time the color temperature is about 3,000K and CRI is about 90 to about 95.
- Fig. 7 is another embodiment's emission spectrum according to the invention, which the phosphor is applied for the light emitting device.
- the embodiment may have a light emitting diode with about 455nm wavelength and the phosphor, which is mixture of the selected multiple chemical compounds in proper ratio.
- the ⁇ phos ⁇ phor is com ⁇ posed of Cu 0 05 Sr 1 7 Ca0 25 SiO 4 : Eu which may J have ⁇ peak wavelength at about 592nm, Pb 0 1 Ba 095 Sr 095 Si 0998 Ge 0002 O 4 : Eu which may J have r peak wavelength at about 527nm, and Cu 0 05 Li 0 002 Sr 1 5 Ba 0448 SiO 4 : Gd, Eu which may have peak wavelength at about 557nm.
- part of the initial about 455nm wavelength emission light from the light emitting diode is absorbed by the phosphor, and it is converted to longer 2 n wavelength.
- the 1 st and 2 n light is mixed together and the desire emission is produced.
- the light emitting device convert the 1 st blue light of about 455nm wavelength to wide spectral range of visible light, that is, white light, and at this time the color temperature is about 4,00OK to about 6,500K and CRI is about 86 to about 93.
- the phosphor of the light emitting device according to the invention can be applied by single chemical compound or mixture of plurality of single chemical compound besides the embodiments in relation to Fig. 6 and Fig. 7, which are explained above.
- light emitting device with wide range of color temperature about 2,00OK or about 8,000K or about 10,000K and superior color rendering index more than about 90 can be realized by using the lead and/or copper doped chemical compounds containing rare earth elements.
- wavelength conversion light emitting device is capable of applying on mobile phone, note book and electronic devices such as home appliance, stereo, telecommunication products, but also for custom display's key pad and back light application. Moreover, it can be applied for automobile, medical instrument and illumination products.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA2592096A CA2592096C (en) | 2004-12-22 | 2005-07-20 | Light emitting device |
BRPI0517584-4A BRPI0517584B1 (en) | 2004-12-22 | 2005-07-20 | LIGHTING DEVICE |
MX2007007648A MX2007007648A (en) | 2004-06-10 | 2005-07-20 | Light emitting device. |
AU2005319965A AU2005319965B2 (en) | 2004-12-22 | 2005-07-20 | Light emitting device |
NO20073682A NO341529B1 (en) | 2004-12-22 | 2007-07-17 | Light emitting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04106882.6 | 2004-12-22 | ||
EP04106882A EP1605030B1 (en) | 2004-06-10 | 2004-12-22 | Light emitting device |
Publications (1)
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WO2006068359A1 true WO2006068359A1 (en) | 2006-06-29 |
Family
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Family Applications (1)
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PCT/KR2005/002332 WO2006068359A1 (en) | 2004-06-10 | 2005-07-20 | Light emitting device |
Country Status (7)
Country | Link |
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AU (1) | AU2005319965B2 (en) |
BR (1) | BRPI0517584B1 (en) |
CA (1) | CA2592096C (en) |
NO (1) | NO341529B1 (en) |
RU (2) | RU2359362C2 (en) |
SG (1) | SG161205A1 (en) |
WO (1) | WO2006068359A1 (en) |
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US9209162B2 (en) | 2004-05-13 | 2015-12-08 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
US9312246B2 (en) | 2006-03-31 | 2016-04-12 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
US9429279B2 (en) | 2007-10-09 | 2016-08-30 | Philips Solid-State Lighting Solutions, Inc. | Integrated LED-based luminaire for general lighting |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0578659A (en) * | 1991-09-18 | 1993-03-30 | Toshiba Corp | Fluorescent substance and fluorescent lamp |
WO1996032457A1 (en) * | 1995-04-14 | 1996-10-17 | Kabushiki Kaisha Tokyo Kagaku Kenkyusho | Phosphor with afterglow characteristic |
JPH0940946A (en) * | 1995-07-28 | 1997-02-10 | Tokyo Kagaku Kenkyusho:Kk | Molded phosphor having afterglow characteristics |
US5770110A (en) * | 1995-10-23 | 1998-06-23 | Hoechst Aktiengesellschaft | UV-active regenerated cellulose fiber |
US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
JP2002097466A (en) * | 2000-09-21 | 2002-04-02 | Kasei Optonix Co Ltd | Aluminate phosphor, phosphor paste composition and light-emitting device by vacuum ultraviolet excitation |
US6670751B2 (en) * | 2001-05-24 | 2003-12-30 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode, light emitting device using the same, and fabrication processes therefor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7013516A (en) * | 1970-09-12 | 1972-03-14 | ||
NL7807274A (en) * | 1978-03-10 | 1979-09-12 | Philips Nv | LUMINESCENT FABRIC, LUMINESCENT DISPLAY WITH SUCH FABRIC AND LOW-PRESSURE MERCURY DISCHARGE LAMP WITH SUCH DISPLAY. |
JPS55135190A (en) * | 1979-04-06 | 1980-10-21 | Dainippon Toryo Co Ltd | Fluorescent substance and its manufacture |
JPS61258892A (en) * | 1985-05-13 | 1986-11-17 | Matsushita Electronics Corp | Fluorescent lamp |
US5472636A (en) * | 1994-09-14 | 1995-12-05 | Osram Sylvania Inc. | Method of preparing manganese and lead coactivated calcium silicate phosphor |
US6600175B1 (en) * | 1996-03-26 | 2003-07-29 | Advanced Technology Materials, Inc. | Solid state white light emitter and display using same |
US5966393A (en) * | 1996-12-13 | 1999-10-12 | The Regents Of The University Of California | Hybrid light-emitting sources for efficient and cost effective white lighting and for full-color applications |
AT410266B (en) * | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | LIGHT SOURCE WITH A LIGHT-EMITTING ELEMENT |
JP4101468B2 (en) * | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | Method for manufacturing light emitting device |
US7019335B2 (en) * | 2001-04-17 | 2006-03-28 | Nichia Corporation | Light-emitting apparatus |
ES2335878T3 (en) * | 2002-08-30 | 2010-04-06 | Lumination, Llc | COVERED LED WITH IMPROVED EFFECTIVENESS. |
RU2219622C1 (en) * | 2002-10-25 | 2003-12-20 | Закрытое акционерное общество "Светлана-Оптоэлектроника" | Semiconductor white light source |
US7042020B2 (en) * | 2003-02-14 | 2006-05-09 | Cree, Inc. | Light emitting device incorporating a luminescent material |
KR101100467B1 (en) * | 2003-03-13 | 2011-12-29 | 오스람 옵토 세미컨덕터스 게엠베하 | Luminescence conversion of led with phosphorescence effect and use thereof |
-
2005
- 2005-07-20 BR BRPI0517584-4A patent/BRPI0517584B1/en active IP Right Grant
- 2005-07-20 WO PCT/KR2005/002332 patent/WO2006068359A1/en active Application Filing
- 2005-07-20 CA CA2592096A patent/CA2592096C/en active Active
- 2005-07-20 SG SG201001939-6A patent/SG161205A1/en unknown
- 2005-07-20 RU RU2007127910/28A patent/RU2359362C2/en active
- 2005-07-20 AU AU2005319965A patent/AU2005319965B2/en not_active Ceased
-
2007
- 2007-07-17 NO NO20073682A patent/NO341529B1/en not_active IP Right Cessation
-
2009
- 2009-02-18 RU RU2009105655/28A patent/RU2485633C2/en active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0578659A (en) * | 1991-09-18 | 1993-03-30 | Toshiba Corp | Fluorescent substance and fluorescent lamp |
WO1996032457A1 (en) * | 1995-04-14 | 1996-10-17 | Kabushiki Kaisha Tokyo Kagaku Kenkyusho | Phosphor with afterglow characteristic |
JPH0940946A (en) * | 1995-07-28 | 1997-02-10 | Tokyo Kagaku Kenkyusho:Kk | Molded phosphor having afterglow characteristics |
US5770110A (en) * | 1995-10-23 | 1998-06-23 | Hoechst Aktiengesellschaft | UV-active regenerated cellulose fiber |
US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
JP2002097466A (en) * | 2000-09-21 | 2002-04-02 | Kasei Optonix Co Ltd | Aluminate phosphor, phosphor paste composition and light-emitting device by vacuum ultraviolet excitation |
US6670751B2 (en) * | 2001-05-24 | 2003-12-30 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode, light emitting device using the same, and fabrication processes therefor |
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WO2007055538A1 (en) * | 2005-11-11 | 2007-05-18 | Seoul Semiconductor Co., Ltd. | Copper-alkaline-earth-silicate mixed crystal phosphors |
US8273266B2 (en) | 2005-11-11 | 2012-09-25 | Seoul Semiconductor Co., Ltd. | Copper-alkaline-earth-silicate mixed crystal phosphors |
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US9576939B2 (en) | 2006-03-31 | 2017-02-21 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
US11322484B2 (en) | 2006-03-31 | 2022-05-03 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
US8674380B2 (en) | 2006-08-29 | 2014-03-18 | Seoul Semiconductor Co., Ltd. | Light emitting device having plural light emitting diodes and plural phosphors for emitting different wavelengths of light |
US8188492B2 (en) | 2006-08-29 | 2012-05-29 | Seoul Semiconductor Co., Ltd. | Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light |
EP1908810A1 (en) * | 2006-10-06 | 2008-04-09 | Nemoto & Co., Ltd. | Phosphor |
US8137589B2 (en) | 2007-08-22 | 2012-03-20 | Seoul Semiconductor Co., Ltd. | Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
US8501040B2 (en) | 2007-08-22 | 2013-08-06 | Seoul Semiconductor Co., Ltd. | Non-stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
KR101106175B1 (en) * | 2007-08-22 | 2012-01-20 | 서울반도체 주식회사 | Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
EP2031038A1 (en) * | 2007-08-22 | 2009-03-04 | Seoul Semiconductor Co., Ltd. | Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
US8431954B2 (en) | 2007-08-28 | 2013-04-30 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
KR101055769B1 (en) * | 2007-08-28 | 2011-08-11 | 서울반도체 주식회사 | Light-emitting device adopting non-stoichiometric tetra-alkaline earth silicate phosphor |
US9429279B2 (en) | 2007-10-09 | 2016-08-30 | Philips Solid-State Lighting Solutions, Inc. | Integrated LED-based luminaire for general lighting |
US8703014B2 (en) | 2009-06-24 | 2014-04-22 | Seoul Semiconductor Co., Ltd. | Luminescent substances having Eu2+-doped silicate luminophores |
US8535564B2 (en) | 2009-06-24 | 2013-09-17 | Seoul Semiconductor, Co., Ltd. | Light emitting device employing luminescent substances with oxyorthosilicate luminophores |
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CN104910908B (en) * | 2015-05-08 | 2016-09-07 | 江苏师范大学 | Red fluorescent material for white light LED and preparation method thereof |
Also Published As
Publication number | Publication date |
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BRPI0517584A (en) | 2008-10-14 |
AU2005319965A1 (en) | 2006-06-29 |
RU2007127910A (en) | 2009-01-27 |
NO341529B1 (en) | 2017-12-04 |
SG161205A1 (en) | 2010-05-27 |
BRPI0517584B1 (en) | 2017-12-12 |
NO20073682L (en) | 2007-09-24 |
RU2359362C2 (en) | 2009-06-20 |
CA2592096C (en) | 2013-08-06 |
RU2009105655A (en) | 2010-09-10 |
CA2592096A1 (en) | 2006-06-29 |
AU2005319965B2 (en) | 2011-02-10 |
RU2485633C2 (en) | 2013-06-20 |
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