WO2006062588A1 - Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission - Google Patents

Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission Download PDF

Info

Publication number
WO2006062588A1
WO2006062588A1 PCT/US2005/037648 US2005037648W WO2006062588A1 WO 2006062588 A1 WO2006062588 A1 WO 2006062588A1 US 2005037648 W US2005037648 W US 2005037648W WO 2006062588 A1 WO2006062588 A1 WO 2006062588A1
Authority
WO
WIPO (PCT)
Prior art keywords
led according
potential well
adapted led
wavelength
led
Prior art date
Application number
PCT/US2005/037648
Other languages
French (fr)
Inventor
Thomas J. Miller
Michael A. Haase
Terry L. Smith
Xiaoguang Sun
Original Assignee
3M Innovative Properties Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Company filed Critical 3M Innovative Properties Company
Priority to EP05810227A priority Critical patent/EP1831934A1/en
Priority to JP2007545453A priority patent/JP5059617B2/en
Publication of WO2006062588A1 publication Critical patent/WO2006062588A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05023—Disposition the whole internal layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Definitions

  • This invention relates to adaptation of short-wavelength LED's to emit polychromatic or broadband light, which may appear as white or near-white light, by addition of a re-emitting semiconductor construction to down-convert a portion of the emitted light to longer wavelengths.
  • LED's Light emitting diodes
  • Conventional LED's contain a single pn junction.
  • the pn junction may include an intermediate undoped region; this type of pn junction may also be called a pin junction.
  • conventional LED's pass an electrical current much more readily in one direction, i.e., in the direction where electrons are moving from the n-region to the p-region. When a current passes in the "forward" direction through the LED, electrons from the n-region recombine with holes from the p-region, generating photons of light.
  • the light emitted by a conventional LED is monochromatic in appearance; that is, it is generated in a single narrow band of wavelengths.
  • the wavelength of the emitted light corresponds to the energy associated with electron-hole pair recombination. In the simplest case, that energy is approximately the band gap energy of the semiconductor in which the recombination occurs.
  • LED's may additionally contain one or more quantum wells at the pn junction which capture high concentrations of both electrons and holes, thereby enhancing light-producing recombination.
  • Several investigators have attempted to produce an LED device which emits white light, or light which appears white to the 3- color perception of the human eye.
  • the present invention provides an adapted LED comprising a short- wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction.
  • the potential well(s) are typically quantum well(s).
  • the re-emitting semiconductor construction additionally comprises an absorbing layer closely or immediately adjacent to a potential well.
  • the re-emitting semiconductor construction additionally comprises at least one second potential well not located within a pn junction having a second transition energy not equal to the transition energy of the first potential well.
  • the short- wavelength LED is a UV LED.
  • the re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to blue-wavelength light, at least one second potential well not located within a pn junction having a second transition energy corresponding to green- wavelength light, and at least one third potential well not located within a pn junction having a third transition energy corresponding to red- wavelength light.
  • the short-wavelength LED is a visible light LED, typically a green, blue or violet LED, more typically a green or blue LED, and most typically a blue LED.
  • the re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to yellow- or green-wavelength light, more typically green-wavelength light, and at least one second potential well not located within a pn junction having a second transition energy corresponding to orange- or red-wavelength light, more typically red-wavelength light.
  • the present invention provides a graphic display device comprising the adapted LED according to the present invention.
  • the present invention provides an illumination device comprising the adapted LED according to the present invention.
  • illumination device comprising the adapted LED according to the present invention.
  • “potential well” means a layer of semiconductor in a semiconductor device which has a lower conduction band energy than surrounding layers or a higher valence band energy than surrounding layers, or both;
  • Quantum well means a potential well which is sufficiently thin that quantization effects raise the electron-hole pair transition energy in the well, typically having a thickness of 100 nm or less;
  • transition energy means electron-hole recombination energy
  • laminate-matched means, with reference to two crystalline materials, such as an epitaxial film on a substrate, that each material taken in isolation has a lattice constant, and that these lattice constants are substantially equal, typically not more than 0.2% different from each other, more typically not more than 0.1% different from each other, and most typically not more than 0.01% different from each other
  • pseudomorphic means, with reference to a first crystalline layer of given thickness and a second crystalline layer, such as an epitaxial film and a substrate, that each layer taken in isolation has a lattice constant, and that these lattice constants are sufficiently similar so that the first layer, in the given thickness, can adopt the lattice spacing of the second layer in the plane of the layer substantially without misfit defects.
  • FIG. 1 is a schematic diagram of an LED according to one embodiment of the present invention.
  • Fig. 2 is a flat-band diagram of conduction and valence bands of semiconductors in a construction according to one embodiment of the present invention. Layer thickness is not represented to scale.
  • Fig. 3 is a graph indicating lattice constant and band gap energy for a variety of ⁇ -VI binary compounds and alloys thereof.
  • Fig. 4 is a graph representing the spectrum of light that emits from a device according to one embodiment of the present invention.
  • the present invention provides an adapted LED comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction.
  • the potential wells are typically quantum wells.
  • the short-wavelength LED emits photons in response to an electric current and the re-emitting semiconductor construction emits photons in response to the absorption of a portion of the photons emitted from the short- wavelength LED.
  • the re-emitting semiconductor construction additionally comprises an absorbing layer closely or immediately adjacent to the potential well.
  • Absorbing layers typically have a band gap energy which is less than or equal to the energy of photons emitted by the short-wavelength LED and greater than the transition energy of the potential wells of the re-emitting semiconductor construction. In typical operation the absorbing layers assist absorption of photons emitted from the short-wavelength LED.
  • the re-emitting semiconductor construction additionally comprises at least one second potential well not located within a pn junction having a second transition energy not equal to the transition energy of the first potential well.
  • the short-wavelength LED is a UV LED.
  • the re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to blue- wavelength light, at least one second potential well not located within a pn junction having a second transition energy corresponding to green-wavelength light, and at least one third potential well not located within a pn junction having a third transition energy corresponding to red-wavelength light.
  • the short-wavelength LED is a visible light LED, typically a green, blue or violet LED, more typically a green or blue LED, and most typically a blue LED.
  • the re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to yellow- or green- wavelength light, more typically green-wavelength light, and at least one second potential well not located within a pn junction having a second transition energy corresponding to orange- or red-wavelength light, more typically red-wavelength light.
  • the re-emitting semiconductor construction may comprise additional potential wells and additional absorbing layers.
  • the adapted LED according to the present invention may be composed of any suitable semiconductors, including Group IV elements such as Si or Ge (other than in light-emitting layers), IH-V compounds such as InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, II- VI compounds such as ZnSe, CdSe, BeSe,
  • Group IV elements such as Si or Ge (other than in light-emitting layers)
  • IH-V compounds such as InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof
  • II- VI compounds such as ZnSe, CdSe, BeSe,
  • the semiconductors may be n-doped or p-doped by any suitable method or by inclusion of any suitable dopant.
  • the short wavelength LED is a ⁇ i-V semiconductor device and the re-emitting semiconductor construction is a II- VI semiconductor device.
  • compositions of the various layers of the components of the adapted LED are selected in light of the following considerations.
  • Each layer typically will be pseudomorphic to the substrate at the thickness given for that layer or lattice matched to the substrate. Alternately, each layer may be pseudomorphic or lattice matched to immediately adjacent layers.
  • Potential well layer materials and thicknesses are typically chosen so as to provide a desired transition energy, which will correspond to the wavelength of light to be emitted from the quantum well. For example, the points labeled 460 run, 540 nm and 630 nm in Fig.
  • each quantum well layer represents Cd(Mg)ZnSe alloys having lattice constants close to that for an InP substrate (5.8687 Angstroms or 0.58687 nm) and band gap energies corresponding to wavelengths of 460nm (blue), 540nm (green) and 630nm (red).
  • the potential well may be regarded as a quantum well.
  • the thickness of each quantum well layer will determine the amount of quantization energy in the quantum well, which is added to the bulk band gap energy to determine the transition energy in the quantum well.
  • the wavelength associated with each quantum well can be tuned by adjustment of the quantum well layer thickness.
  • thicknesses for quantum well layers are between 1 nm and 100 nm, more typically between 2 nm and 35 nm.
  • the quantization energy translates into a reduction in wavelength of 20 to 50 nm relative to that expected on the basis of the band gap energy alone.
  • Strain in the emitting layer may also change the transition energy for potential wells and quantum wells, including the strain resulting from the imperfect match of lattice constants between pseudomorphic layers.
  • any suitable emission wavelengths may be chosen, including those in the infrared, visible, and ultraviolet bands.
  • the emission wavelengths are chosen so that the combined output of light emitted by the adapted LED creates the appearance of any color that can be generated by the combination of two, three or more monochromatic light sources, including white or near-white colors, pastel colors, magenta, cyan, and the like, hi another embodiment, the adapted LED according to the present invention emits light at an invisible infrared or ultraviolet wavelength and at a visible wavelength as an indication that the device is in operation.
  • the short-wavelength LED emits photons of the shortest wavelength, so that photons emitted from the short-wavelength LED have sufficient energy to drive the potential wells in the re-emitting semiconductor construction.
  • Fig. 1 is a schematic diagram of an adapted LED according to one embodiment of the present invention.
  • Adapted LED 50 includes short- wavelength LED 20 and re-emitting semiconductor construction 10.
  • Re-emitting semiconductor construction 10 may be attached to the emitting surface of short-wavelength LED 20 by any suitable method, including the use of adhesive or welding materials, pressure, heat or combinations thereof.
  • adapted LED 50 is flip-chip mounted on header 40. Solder contacts 27 and 28 maintain electrical contact between LED electrodes 25 and 26 and header traces 42 and 43, respectively.
  • Short-wavelength LED 20 is typically a UV wavelength LED or a visible wavelength LED. Where short- wavelength LED 20 is a visible wavelength LED, it typically a green, blue or violet wavelength LED and most typically a blue or violet wavelength LED.
  • Short- wavelength LED 20 may comprise any suitable components, hi the depicted embodiment, short-wavelength LED 20 comprises electrical contacts 25 and 26, a transparent base layer 21 , and functional layers 22, 23 and 24. Functional layers 22, 23 and 24 may represent any suitable LED construction but typically represent a pn junction, including p- and n-doped semiconductors 22 and 24 and a light-emitting region 23 which may comprise one or more quantum wells.
  • a re-emitting semiconductor construction 10 according to the present invention is mounted on the emitting surface of the short- wavelength LED 20. In the depicted embodiment, re-emitting semiconductor construction 10 comprises red quantum well layer 12, green quantum well layer 14, and intermediate layers 11, 13 and 15.
  • intermediate layers 11, 13 and 15 include support layers and absorbing layers, as described below, hi one typical embodiment, short wavelength LED 20 is a III-V semiconductor device, such as a blue-emitting GaN-based LED, and re-emitting semiconductor construction 10 is a II- VI semiconductor device.
  • Fig. 2 is a band diagram representing conduction and valence bands of semiconductors in a re-emitting semiconductor construction according to one embodiment of the present invention. Layer thickness is not represented to scale. Table I indicates the composition of layers 1-9 in this embodiment and the band gap energy (Eg) for that composition. This construction may be grown on an InP substrate.
  • Eg band gap energy
  • Layer 3 represents a single potential well which is a red-emitting quantum well having a thickness of about 10 ran.
  • Layer 7 represents a single potential well which is a green-emitting quantum well having a thickness of about 10 ran.
  • Layers 2, 4, 6 and 8 represent absorbing layers, each having a thickness of about 1000 ran.
  • Layers 1, 5 and 9 represent support layers. Support layers are typically chosen so as to be substantially transparent to light emitted from quantum wells 3 and 7 and from short- wavelength
  • the device may comprise multiple red- or green-emitting potential wells or quantum wells separated by absorbing layers and/or support layers.
  • Fig. 1 operates according to the following principles: When an electrical current passes between electrodes 25 and 26, short-wavelength photons are emitted from short-wavelength LED 20. Photons traveling in the direction of the emitting surface of short-wavelength LED 20 enter re-emitting semiconductor construction 10. Photons passing through re-emitting semiconductor construction 10 maybe absorbed and re-emitted from the green-emitting quantum well 7 as green- wavelength photons or from the red-emitting quantum well 3 as red-wavelength photons.
  • the absorption of a short-wavelength photon generates an electron-hole pair which may then recombine in the quantum wells, with the emission of a photon.
  • the polychromatic combination of blue-, green- and red- wavelength light emitted from the device may appear white or near- white in color.
  • the intensity of blue-, green- and red- wavelength light emitted from the device may be balanced in any suitable manner, including manipulation of the number of quantum wells of each type, the use of filters or reflective layers, and manipulation of the thickness and composition of absorbing layers.
  • Fig. 4 represents a spectrum of light that emits from one embodiment of the device according to the present invention.
  • absorbing layers 2, 4, 5 and 8 may be adapted to absorb photons emitted from short wavelength LED 20 by selecting a band gap energy for the absorbing layers that is intermediate between the energy of photons emitted from short wavelength LED 20 and the transition energies of quantum wells 3 and 7. Electron-hole pairs generated by absorption of photons in the absorbing layers 2, 4, 6 and 8 are typically captured by the quantum wells 3 and 7 before recombining with concomitant emission of a photon.
  • Absorbing layers may optionally have a gradient in composition over all or a portion of their thickness, so as to funnel or direct electrons and/or holes toward potential wells.
  • the short-wavelength LED 20 is a visible wavelength LED
  • layers 11-15 of re-emitting semiconductor construction 10 may be partially transparent to the light emitted from the short wavelength LED.
  • Vector B represents a blue wavelength photon passing through re-emitting semiconductor construction 10.
  • Vector R represents a red wavelength photon emitted from red quantum well layer 12 after absorption of a blue wavelength photon emitted from short- wavelength LED 20.
  • Vector G represents a green wavelength photon emitted from green quantum well layer 14 after absorption of a blue wavelength photon emitted from short-wavelength LED 20.
  • short-wavelength LED 20 is a UV wavelength LED
  • layers 11-15 of re-emitting semiconductor construction 10 may block a greater portion or substantially or completely all of the light emitted from the short wavelength LED 20, so that a greater portion or substantially or completely all of the light emitted from the adapted LED 50 is light re-emitted from re-emitting semiconductor construction 10.
  • short- wavelength LED 20 is a UV wavelength LED
  • re-emitting semiconductor construction 10 may include red-, green- and blue-emitting quantum wells.
  • the adapted LED according to the present invention may comprise additional layers of conducting, semiconducting or non-conducting materials. Electrical contact layers may be added to provide a path for supply of electrical current to the short- wavelength LED.
  • the adapted LED according to the present invention is a white or near- white LED which emits light at four principal wavelengths in the blue, green, yellow and red bands. In one embodiment, the adapted LED according to the present invention is a white or near-white LED which emits light at two principal wavelengths in the blue and yellow bands.
  • the adapted LED according to the present invention may comprise additional semiconductor elements comprising active or passive components such as resistors, diodes, zener diodes, conventional LED's, capacitors, transistors, bipolar transistors, FET transistors, MOSFET transistors, insulated gate bipolar transistors, phototransistors, photodetectors, SCR' s, thyristors, triacs, voltage regulators, and other circuit elements.
  • the adapted LED according to the present invention may comprise an integrated circuit.
  • the adapted LED according to the present invention may comprise a display panel or an illumination panel.
  • the short-wavelength LED and the re-emitting semiconductor construction which make up the adapted LED according to the present invention may be manufactured by any suitable method, which may include molecular beam epitaxy
  • the elements of the adapted LED according to the present invention may include a substrate. Any suitable substrate may be used in the practice of the present invention. Typical substrate materials include Si, Ge, GaAs, InP, sapphire, SiC and ZnSe. The substrate may be n-doped, p-doped, or semi-insulating, which may be achieved by any suitable method or by inclusion of any suitable dopant. Alternately, the elements of the adapted LED according to the present invention may be without a substrate. In one embodiment, elements of the adapted LED according to the present invention maybe formed on a substrate and then separated from the substrate.
  • the elements of the adapted LED according to the present invention may be joined together by any suitable method, including the use of adhesive or welding materials, pressure, heat or combinations thereof.
  • the re-emitting semiconductor construction is formed on a substrate, bonded to the short-wavelength LED, and then its substrate is removed by physical, chemical or energetic methods.
  • the bond created is transparent. Bonding methods may include interfacial or edge bonding.
  • refractive index matching layers or interstitial spaces may be included.
  • the adapted LED according to the present invention may be a component or the critical component of a graphic display device such as a large- or small-screen video monitor, computer monitor or display, television, telephone device or telephone device display, personal digital assistant or personal digital assistant display, pager or pager display, calculator or calculator display, game or game display, toy or toy display, large or small appliance or large or small appliance display, automotive dashboard or automotive dashboard display, automotive interior or automotive interior display, marine dashboard or marine dashboard display, marine interior or marine interior display, aeronautic dashboard or aeronautic dashboard display, aeronautic interior or aeronautic interior display, traffic control device or traffic control device display, advertising display, advertising sign, or the like.
  • a graphic display device such as a large- or small-screen video monitor, computer monitor or display, television, telephone device or telephone device display, personal digital assistant or personal digital assistant display, pager or pager display, calculator or calculator display, game or game display, toy or toy display, large or small appliance or large or small appliance display, automotive dashboard or automotive dashboard display, automotive interior or automotive interior
  • the adapted LED according to the present invention may be a component or the critical component of a liquid crystal display (LCD), or like display, as a backlight to that display.
  • the semiconductor device according to the present invention is specially adapted for use a backlight for a liquid crystal display by matching the colors emitted by the semiconductor device according to the present invention to the color filters of the LCD display.
  • the adapted LED according to the present invention may be a component or the critical component of an illumination device such as a free-standing or built-in lighting fixture or lamp, landscape or architectural illumination fixture, hand-held or vehicle- mounted lamp, automotive headlight or taillight, automotive interior illumination fixture, automotive or non-automotive signaling device, road illumination device, traffic control signaling device, marine lamp or signaling device or interior illumination fixture, aeronautic lamp or signaling device or interior illumination fixture, large or small appliance or large or small appliance lamp, or the like; or any device or component used as a source of infrared, visible, or ultraviolet radiation.
  • an illumination device such as a free-standing or built-in lighting fixture or lamp, landscape or architectural illumination fixture, hand-held or vehicle- mounted lamp, automotive headlight or taillight, automotive interior illumination fixture, automotive or non-automotive signaling device, road illumination device, traffic control signaling device, marine lamp or signaling device or interior illumination fixture, aeronautic lamp or signaling device or interior illumination fixture, large or small appliance or large or small appliance lamp, or the like

Abstract

An adapted LED is provided comprising a short-wavelength LED and a re emitting semiconductor construction, wherein the re emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

Description

005/037648
Adapting Short- Wavelength LED's for Polychromatic, Broadband, or "White" Emission
Field of the Invention
This invention relates to adaptation of short-wavelength LED's to emit polychromatic or broadband light, which may appear as white or near-white light, by addition of a re-emitting semiconductor construction to down-convert a portion of the emitted light to longer wavelengths.
Background of the Invention
Light emitting diodes (LED's) are solid-state semiconductor devices which emit light when an electrical current is passed between anode and cathode. Conventional LED's contain a single pn junction. The pn junction may include an intermediate undoped region; this type of pn junction may also be called a pin junction. Like non- light emitting semiconductor diodes, conventional LED's pass an electrical current much more readily in one direction, i.e., in the direction where electrons are moving from the n-region to the p-region. When a current passes in the "forward" direction through the LED, electrons from the n-region recombine with holes from the p-region, generating photons of light. The light emitted by a conventional LED is monochromatic in appearance; that is, it is generated in a single narrow band of wavelengths. The wavelength of the emitted light corresponds to the energy associated with electron-hole pair recombination. In the simplest case, that energy is approximately the band gap energy of the semiconductor in which the recombination occurs.
Conventional LED's may additionally contain one or more quantum wells at the pn junction which capture high concentrations of both electrons and holes, thereby enhancing light-producing recombination. Several investigators have attempted to produce an LED device which emits white light, or light which appears white to the 3- color perception of the human eye.
Some investigators report the purported design or manufacture of LED's having multiple quantum wells within the pn junction, where the multiple quantum wells are intended to emit light at different wavelengths. The following references may be relevant to such a technology: U.S. Pat. No. 5,851,905; U.S. Pat. No. 6,303,404; U.S. Pat. No. 6,504,171; U.S. Pat. No. 6,734,467; Damilano et al., Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells, Jpn. J. Appl. Phys. Vol. 40 (2001) pp. L918-L920; Yamada et al., Phosphor Free High-Luminous- Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well, Jpn. J. Appl. Phys. Vol. 41 (2002) pp. L246-L248; Dalmasso et al., Injection Dependence of the Electroluminescence Spectra of Phosphor Free GaN-Based White Light Emitting Diodes, phys. stat sol. (a) 192, No. 1, 139-143 (2003).
Some investigators report the purported design or manufacture of LED devices which combine two conventional LED's, intended to independently emit light at different wavelengths, in a single device. The following references may be relevant to such a technology: U.S. Pat. No. 5,851,905; U.S. Pat. No. 6,734,467; U.S. Pat. Pub. No. 2002/0041148 Al; U.S. Pat. Pub. No. 2002/0134989 Al; and Luo et al., Patterned three-color ZnCdSeZZnCdMgSe quantum-well structures for integrated full-color and white light emitters, App. Phys. Letters, vol. 77, no. 26, pp. 4259-4261 (2000).
Some investigators report the purported design or manufacture of LED devices which combine a conventional LED element with a chemical phosphor, such as yttrium aluminum garnet (YAG), which is intended to absorb a portion of the light emitted by the LED element and re-emit light of a longer wavelength. U.S. Pat. No. 5,998,925 and U.S. Pat. No. 6,734,467 may be relevant to such a technology.
Some investigators report the purported design or manufacture of LED's grown on a ZnSe substrate n-doped with I, Al, Cl, Br, Ga or In so as to create fluorescing centers in the substrate, which are intended to absorb a portion of the light emitted by the LED element and re-emit light of a longer wavelength. U.S. Pat. App. 6,337,536 and Japanese Pat. App. Pub. No. 2004-072047 may be relevant to such a technology. Summary of the Invention
Briefly, the present invention provides an adapted LED comprising a short- wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). In one embodiment, the re-emitting semiconductor construction additionally comprises an absorbing layer closely or immediately adjacent to a potential well. In one embodiment, the re-emitting semiconductor construction additionally comprises at least one second potential well not located within a pn junction having a second transition energy not equal to the transition energy of the first potential well. In one embodiment, the short- wavelength LED is a UV LED. In one such embodiment, the re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to blue-wavelength light, at least one second potential well not located within a pn junction having a second transition energy corresponding to green- wavelength light, and at least one third potential well not located within a pn junction having a third transition energy corresponding to red- wavelength light. In one embodiment, the short-wavelength LED is a visible light LED, typically a green, blue or violet LED, more typically a green or blue LED, and most typically a blue LED. In one such embodiment, the re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to yellow- or green-wavelength light, more typically green-wavelength light, and at least one second potential well not located within a pn junction having a second transition energy corresponding to orange- or red-wavelength light, more typically red-wavelength light. In another aspect, the present invention provides a graphic display device comprising the adapted LED according to the present invention.
In another aspect, the present invention provides an illumination device comprising the adapted LED according to the present invention. In this application: with regard to a stack of layers in a semiconductor device, "immediately adjacent" means next in sequence without intervening layers, "closely adjacent" means next in sequence with one or a few intervening layers, and "surrounding" means both before and after in sequence;
"potential well" means a layer of semiconductor in a semiconductor device which has a lower conduction band energy than surrounding layers or a higher valence band energy than surrounding layers, or both;
"quantum well" means a potential well which is sufficiently thin that quantization effects raise the electron-hole pair transition energy in the well, typically having a thickness of 100 nm or less;
"transition energy" means electron-hole recombination energy; "lattice-matched" means, with reference to two crystalline materials, such as an epitaxial film on a substrate, that each material taken in isolation has a lattice constant, and that these lattice constants are substantially equal, typically not more than 0.2% different from each other, more typically not more than 0.1% different from each other, and most typically not more than 0.01% different from each other; and "pseudomorphic" means, with reference to a first crystalline layer of given thickness and a second crystalline layer, such as an epitaxial film and a substrate, that each layer taken in isolation has a lattice constant, and that these lattice constants are sufficiently similar so that the first layer, in the given thickness, can adopt the lattice spacing of the second layer in the plane of the layer substantially without misfit defects. It should be understood that, for any embodiment of the present invention described herein comprising n-doped and p-doped semiconductor regions, a further embodiment should be considered as disclosed herein wherein n doping is exchanged with p doping and vice-versa.
It should be understood that, where each of "potential well," "first potential well," "second potential well" and "third potential well" are recited herein, a single potential well may be provided or multiple potential wells, which typically share similar properties, may be provided. Likewise, it should be understood that, where each of "quantum well," "first quantum well," "second quantum well" and "third quantum well" are recited herein, a single quantum well may be provided or multiple quantum wells, which typically share similar properties, may be provided. It is an advantage of certain embodiments of the present invention to provide an LED device capable of emitting polychromatic, white or near-white light.
Brief Description of the Drawing Fig. 1 is a schematic diagram of an LED according to one embodiment of the present invention.
Fig. 2 is a flat-band diagram of conduction and valence bands of semiconductors in a construction according to one embodiment of the present invention. Layer thickness is not represented to scale. Fig. 3 is a graph indicating lattice constant and band gap energy for a variety of π-VI binary compounds and alloys thereof.
Fig. 4 is a graph representing the spectrum of light that emits from a device according to one embodiment of the present invention.
Detailed Description
The present invention provides an adapted LED comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential wells are typically quantum wells. In typical operation, the short-wavelength LED emits photons in response to an electric current and the re-emitting semiconductor construction emits photons in response to the absorption of a portion of the photons emitted from the short- wavelength LED. In one embodiment, the re-emitting semiconductor construction additionally comprises an absorbing layer closely or immediately adjacent to the potential well. Absorbing layers typically have a band gap energy which is less than or equal to the energy of photons emitted by the short-wavelength LED and greater than the transition energy of the potential wells of the re-emitting semiconductor construction. In typical operation the absorbing layers assist absorption of photons emitted from the short-wavelength LED. In one embodiment, the re-emitting semiconductor construction additionally comprises at least one second potential well not located within a pn junction having a second transition energy not equal to the transition energy of the first potential well. In one embodiment, the short-wavelength LED is a UV LED. In one such embodiment, the re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to blue- wavelength light, at least one second potential well not located within a pn junction having a second transition energy corresponding to green-wavelength light, and at least one third potential well not located within a pn junction having a third transition energy corresponding to red-wavelength light. In one embodiment, the short-wavelength LED is a visible light LED, typically a green, blue or violet LED, more typically a green or blue LED, and most typically a blue LED. In one such embodiment, the re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to yellow- or green- wavelength light, more typically green-wavelength light, and at least one second potential well not located within a pn junction having a second transition energy corresponding to orange- or red-wavelength light, more typically red-wavelength light. The re-emitting semiconductor construction may comprise additional potential wells and additional absorbing layers.
The adapted LED according to the present invention may be composed of any suitable semiconductors, including Group IV elements such as Si or Ge (other than in light-emitting layers), IH-V compounds such as InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, II- VI compounds such as ZnSe, CdSe, BeSe,
MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, BeS, MgS and alloys thereof, or alloys of any of the above. Where appropriate, the semiconductors may be n-doped or p-doped by any suitable method or by inclusion of any suitable dopant. In one typical embodiment, the short wavelength LED is a πi-V semiconductor device and the re-emitting semiconductor construction is a II- VI semiconductor device.
In one embodiment of the present invention, the compositions of the various layers of the components of the adapted LED are selected in light of the following considerations. Each layer typically will be pseudomorphic to the substrate at the thickness given for that layer or lattice matched to the substrate. Alternately, each layer may be pseudomorphic or lattice matched to immediately adjacent layers. Potential well layer materials and thicknesses are typically chosen so as to provide a desired transition energy, which will correspond to the wavelength of light to be emitted from the quantum well. For example, the points labeled 460 run, 540 nm and 630 nm in Fig. 3 represent Cd(Mg)ZnSe alloys having lattice constants close to that for an InP substrate (5.8687 Angstroms or 0.58687 nm) and band gap energies corresponding to wavelengths of 460nm (blue), 540nm (green) and 630nm (red). Where a potential well layer is sufficiently thin that quantization raises the transition energy above the bulk band gap energy in the well, the potential well may be regarded as a quantum well. The thickness of each quantum well layer will determine the amount of quantization energy in the quantum well, which is added to the bulk band gap energy to determine the transition energy in the quantum well. Thus, the wavelength associated with each quantum well can be tuned by adjustment of the quantum well layer thickness. Typically thicknesses for quantum well layers are between 1 nm and 100 nm, more typically between 2 nm and 35 nm. Typically the quantization energy translates into a reduction in wavelength of 20 to 50 nm relative to that expected on the basis of the band gap energy alone. Strain in the emitting layer may also change the transition energy for potential wells and quantum wells, including the strain resulting from the imperfect match of lattice constants between pseudomorphic layers.
Techniques for calculating the transition energy of a strained or unstrained potential well or quantum well are known in the art, e.g., in Herbert Kroemer, Quantum Mechanics for Engineering, Materials Science and Applied Physics (Prentice Hall, Englewood Cliffs, New Jersey, 1994) at pp. 54 -63; and Zory, ed., Quantum Well Lasers (Academic Press, San Diego, California, 1993) at pp. 72-79
Any suitable emission wavelengths may be chosen, including those in the infrared, visible, and ultraviolet bands. In one embodiment of the present invention, the emission wavelengths are chosen so that the combined output of light emitted by the adapted LED creates the appearance of any color that can be generated by the combination of two, three or more monochromatic light sources, including white or near-white colors, pastel colors, magenta, cyan, and the like, hi another embodiment, the adapted LED according to the present invention emits light at an invisible infrared or ultraviolet wavelength and at a visible wavelength as an indication that the device is in operation. Typically the short-wavelength LED emits photons of the shortest wavelength, so that photons emitted from the short-wavelength LED have sufficient energy to drive the potential wells in the re-emitting semiconductor construction.
Fig. 1 is a schematic diagram of an adapted LED according to one embodiment of the present invention. Adapted LED 50 includes short- wavelength LED 20 and re-emitting semiconductor construction 10. Re-emitting semiconductor construction 10 may be attached to the emitting surface of short-wavelength LED 20 by any suitable method, including the use of adhesive or welding materials, pressure, heat or combinations thereof. In the depicted embodiment, adapted LED 50 is flip-chip mounted on header 40. Solder contacts 27 and 28 maintain electrical contact between LED electrodes 25 and 26 and header traces 42 and 43, respectively. Short-wavelength LED 20 is typically a UV wavelength LED or a visible wavelength LED. Where short- wavelength LED 20 is a visible wavelength LED, it typically a green, blue or violet wavelength LED and most typically a blue or violet wavelength LED. Short- wavelength LED 20 may comprise any suitable components, hi the depicted embodiment, short-wavelength LED 20 comprises electrical contacts 25 and 26, a transparent base layer 21 , and functional layers 22, 23 and 24. Functional layers 22, 23 and 24 may represent any suitable LED construction but typically represent a pn junction, including p- and n-doped semiconductors 22 and 24 and a light-emitting region 23 which may comprise one or more quantum wells. A re-emitting semiconductor construction 10 according to the present invention is mounted on the emitting surface of the short- wavelength LED 20. In the depicted embodiment, re-emitting semiconductor construction 10 comprises red quantum well layer 12, green quantum well layer 14, and intermediate layers 11, 13 and 15. hi one embodiment of the present invention, intermediate layers 11, 13 and 15 include support layers and absorbing layers, as described below, hi one typical embodiment, short wavelength LED 20 is a III-V semiconductor device, such as a blue-emitting GaN-based LED, and re-emitting semiconductor construction 10 is a II- VI semiconductor device.
Fig. 2 is a band diagram representing conduction and valence bands of semiconductors in a re-emitting semiconductor construction according to one embodiment of the present invention. Layer thickness is not represented to scale. Table I indicates the composition of layers 1-9 in this embodiment and the band gap energy (Eg) for that composition. This construction may be grown on an InP substrate.
Table I
Figure imgf000011_0001
Layer 3 represents a single potential well which is a red-emitting quantum well having a thickness of about 10 ran. Layer 7 represents a single potential well which is a green-emitting quantum well having a thickness of about 10 ran. Layers 2, 4, 6 and 8 represent absorbing layers, each having a thickness of about 1000 ran. Layers 1, 5 and 9 represent support layers. Support layers are typically chosen so as to be substantially transparent to light emitted from quantum wells 3 and 7 and from short- wavelength
LED 20. Alternately, the device may comprise multiple red- or green-emitting potential wells or quantum wells separated by absorbing layers and/or support layers.
Without wishing to be bound by theory, it is believed that the embodiment of the present invention depicted in Fig. 1 operates according to the following principles: When an electrical current passes between electrodes 25 and 26, short-wavelength photons are emitted from short-wavelength LED 20. Photons traveling in the direction of the emitting surface of short-wavelength LED 20 enter re-emitting semiconductor construction 10. Photons passing through re-emitting semiconductor construction 10 maybe absorbed and re-emitted from the green-emitting quantum well 7 as green- wavelength photons or from the red-emitting quantum well 3 as red-wavelength photons. The absorption of a short-wavelength photon generates an electron-hole pair which may then recombine in the quantum wells, with the emission of a photon. The polychromatic combination of blue-, green- and red- wavelength light emitted from the device may appear white or near- white in color. The intensity of blue-, green- and red- wavelength light emitted from the device may be balanced in any suitable manner, including manipulation of the number of quantum wells of each type, the use of filters or reflective layers, and manipulation of the thickness and composition of absorbing layers. Fig. 4 represents a spectrum of light that emits from one embodiment of the device according to the present invention.
Again with reference to the embodiment represented by Fig. 2, absorbing layers 2, 4, 5 and 8 may be adapted to absorb photons emitted from short wavelength LED 20 by selecting a band gap energy for the absorbing layers that is intermediate between the energy of photons emitted from short wavelength LED 20 and the transition energies of quantum wells 3 and 7. Electron-hole pairs generated by absorption of photons in the absorbing layers 2, 4, 6 and 8 are typically captured by the quantum wells 3 and 7 before recombining with concomitant emission of a photon. Absorbing layers may optionally have a gradient in composition over all or a portion of their thickness, so as to funnel or direct electrons and/or holes toward potential wells.
Where the short-wavelength LED 20 is a visible wavelength LED, layers 11-15 of re-emitting semiconductor construction 10 may be partially transparent to the light emitted from the short wavelength LED. Vector B represents a blue wavelength photon passing through re-emitting semiconductor construction 10. Vector R represents a red wavelength photon emitted from red quantum well layer 12 after absorption of a blue wavelength photon emitted from short- wavelength LED 20. Vector G represents a green wavelength photon emitted from green quantum well layer 14 after absorption of a blue wavelength photon emitted from short-wavelength LED 20. Alternately, where short-wavelength LED 20 is a UV wavelength LED, layers 11-15 of re-emitting semiconductor construction 10 may block a greater portion or substantially or completely all of the light emitted from the short wavelength LED 20, so that a greater portion or substantially or completely all of the light emitted from the adapted LED 50 is light re-emitted from re-emitting semiconductor construction 10. Where short- wavelength LED 20 is a UV wavelength LED, re-emitting semiconductor construction 10 may include red-, green- and blue-emitting quantum wells. The adapted LED according to the present invention may comprise additional layers of conducting, semiconducting or non-conducting materials. Electrical contact layers may be added to provide a path for supply of electrical current to the short- wavelength LED. Electrical contact layers may be placed such that the current passes also through the re-emitting semiconductor construction, or such that the current does not pass through the re-emitting semiconductor construction. Light filtering layers may be added to alter or correct the balance of light wavelengths in the light emitted by the adapted LED. To improve brightness and efficiency, layers comprising a mirror or reflector may be added. In one embodiment, the adapted LED according to the present invention is a white or near- white LED which emits light at four principal wavelengths in the blue, green, yellow and red bands. In one embodiment, the adapted LED according to the present invention is a white or near-white LED which emits light at two principal wavelengths in the blue and yellow bands. The adapted LED according to the present invention may comprise additional semiconductor elements comprising active or passive components such as resistors, diodes, zener diodes, conventional LED's, capacitors, transistors, bipolar transistors, FET transistors, MOSFET transistors, insulated gate bipolar transistors, phototransistors, photodetectors, SCR' s, thyristors, triacs, voltage regulators, and other circuit elements. The adapted LED according to the present invention may comprise an integrated circuit. The adapted LED according to the present invention may comprise a display panel or an illumination panel.
The short-wavelength LED and the re-emitting semiconductor construction which make up the adapted LED according to the present invention may be manufactured by any suitable method, which may include molecular beam epitaxy
(MBE), chemical vapor deposition, liquid phase epitaxy and vapor phase epitaxy. The elements of the adapted LED according to the present invention may include a substrate. Any suitable substrate may be used in the practice of the present invention. Typical substrate materials include Si, Ge, GaAs, InP, sapphire, SiC and ZnSe. The substrate may be n-doped, p-doped, or semi-insulating, which may be achieved by any suitable method or by inclusion of any suitable dopant. Alternately, the elements of the adapted LED according to the present invention may be without a substrate. In one embodiment, elements of the adapted LED according to the present invention maybe formed on a substrate and then separated from the substrate. The elements of the adapted LED according to the present invention may be joined together by any suitable method, including the use of adhesive or welding materials, pressure, heat or combinations thereof. In one embodiment, the re-emitting semiconductor construction is formed on a substrate, bonded to the short-wavelength LED, and then its substrate is removed by physical, chemical or energetic methods. Typically, the bond created is transparent. Bonding methods may include interfacial or edge bonding. Optionally, refractive index matching layers or interstitial spaces may be included.
The adapted LED according to the present invention may be a component or the critical component of a graphic display device such as a large- or small-screen video monitor, computer monitor or display, television, telephone device or telephone device display, personal digital assistant or personal digital assistant display, pager or pager display, calculator or calculator display, game or game display, toy or toy display, large or small appliance or large or small appliance display, automotive dashboard or automotive dashboard display, automotive interior or automotive interior display, marine dashboard or marine dashboard display, marine interior or marine interior display, aeronautic dashboard or aeronautic dashboard display, aeronautic interior or aeronautic interior display, traffic control device or traffic control device display, advertising display, advertising sign, or the like.
The adapted LED according to the present invention may be a component or the critical component of a liquid crystal display (LCD), or like display, as a backlight to that display. In one embodiment, the semiconductor device according to the present invention is specially adapted for use a backlight for a liquid crystal display by matching the colors emitted by the semiconductor device according to the present invention to the color filters of the LCD display.
The adapted LED according to the present invention may be a component or the critical component of an illumination device such as a free-standing or built-in lighting fixture or lamp, landscape or architectural illumination fixture, hand-held or vehicle- mounted lamp, automotive headlight or taillight, automotive interior illumination fixture, automotive or non-automotive signaling device, road illumination device, traffic control signaling device, marine lamp or signaling device or interior illumination fixture, aeronautic lamp or signaling device or interior illumination fixture, large or small appliance or large or small appliance lamp, or the like; or any device or component used as a source of infrared, visible, or ultraviolet radiation.
Various modifications and alterations of this invention will become apparent to those skilled in the art without departing from the scope and principles of this invention, and it should be understood that this invention is not to be unduly limited to the illustrative embodiments set forth hereinabove.

Claims

We claim:
1. An adapted LED comprising a short- wavelength LED and a re-emitting semiconductor construction, wherein said re-emitting semiconductor construction comprises a potential well not located within a pn junction.
2. The adapted LED according to claim 1 wherein said re-emitting semiconductor construction additionally comprises an absorbing layer closely adjacent to at least one of said at least one potential well.
3. The adapted LED according to claim 1 wherein said re-emitting semiconductor construction additionally comprises an absorbing layer immediately adjacent to at least one of said at least one potential well.
4. The adapted LED according to claim 1 wherein said re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy and at least one second potential well not located within a pn junction having a second transition energy not equal to said first transition energy.
5. The adapted LED according to claim 1 wherein said short- wavelength LED is a UV LED.
6. The adapted LED according to claim 1 wherein said short- wavelength LED is a green, blue or violet LED.
7. The adapted LED according to claim 1 wherein said short-wavelength LED is a blue LED.
8. The adapted LED according to claim 5, wherein said re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to blue-wavelength light, at least one second potential well not located within a pn junction having a second transition energy corresponding to green-wavelength light, and at least one third potential well not located within a pn junction having a third transition energy corresponding to red- wavelength light.
9. The adapted LED according to claim 6, wherein said re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to yellow- or green-wavelength light and at least one second potential well not located within a pn junction having a second transition energy corresponding to orange- or red-wavelength light.
10. The adapted LED according to claim 7, wherein said re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to yellow- or green-wavelength light and at least one second potential well not located within a pn junction having a second transition energy corresponding to orange- or red-wavelength light.
11. The adapted LED according to claim 7, wherein said re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to green-wavelength light and at least one second potential well not located within a pn junction having a second transition energy corresponding to red-wavelength light.
12. The adapted LED according to claim 1 wherein said at least one potential well includes a quantum well.
13. The adapted LED according to claim 2 wherein said at least one potential well includes a quantum well.
14. The adapted LED according to claim 3 wherein said at least one potential well includes a quantum well. 15. The adapted LED according to claim 4 wherein said at least one first potential well includes a first quantum well and wherein said at least one second potential well includes a second quantum well.
16. The adapted LED according to claim 5 wherein said at least one potential well includes a quantum well.
17. The adapted LED according to claim 6 wherein said at least one potential well includes a quantum well.
18. The adapted LED according to claim 7 wherein said at least one potential well includes a quantum well.
19. The adapted LED according to claim 8 wherein said at least one first potential well includes a first quantum well, wherein said at least one second potential well includes a second quantum well, and wherein said at least one third potential well includes a third quantum well.
20. The adapted LED according to claim 9 wherein said at least one first potential well includes a first quantum well and wherein said at least one second potential well includes a second quantum well.
21. The adapted LED according to claim 10 wherein said at least one first potential well includes a first quantum well and wherein said at least one second potential well includes a second quantum well.
22. The adapted LED according to claim 11 wherein said at least one first potential well includes a first quantum well and wherein said at least one second potential well includes a second quantum well.
23. A graphic display device comprising the adapted LED according to claim 1. 24. An illumination device comprising the adapted LED according to claim 1.
25. A graphic display device comprising the adapted LED according to claim 2.
26. An illumination device comprising the adapted LED according to claim 2.
27. A graphic display device comprising the adapted LED according to claim 6.
28. An illumination device comprising the adapted LED according to claim 6.
29. A graphic display device comprising the adapted LED according to claim 10.
30. An illumination device comprising the adapted LED according to claim 10.
31. A graphic display device comprising the adapted LED according to claim 12.
32. An illumination device comprising the adapted LED according to claim 12.
33. A graphic display device comprising the adapted LED according to claim 13.
34. An illumination device comprising the adapted LED according to claim 13.
35. A graphic display device comprising the adapted LED according to claim 17.
36. An illumination device comprising the adapted LED according to claim 17.
37. A graphic display device comprising the adapted LED according to claim 21.
38. An illumination device comprising the adapted LED according to claim 21. 39. The adapted LED according to claim 7, wherein said re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to yellow- wavelength light.
40. The adapted LED according to claim 5, wherein said re-emitting semiconductor construction comprises at least one first potential well not located within a pn junction having a first transition energy corresponding to blue-wavelength light and at least one second potential well not located within a pn junction having a second transition energy corresponding to yellow-wavelength light.
41. The adapted LED according to claim 1 , wherein said short-wavelength LED comprises πi-V semiconductors and said re-emitting semiconductor construction comprises H-VI semiconductors.
42. The adapted LED according to claim 1 , wherein said short-wavelength LED comprises GaN semiconductors and said re-emitting semiconductor construction comprises II- VI semiconductors.
1/4
Figure imgf000021_0001
2/4
Figure imgf000022_0001
Fig. 2
Figure imgf000023_0001
5.2 5.4 5.6 5.8 6 6.2 6.4 6.6
Lattice Constant [angstroms] o Hl-V ■ II-VI
Fig. 3
4/4
Figure imgf000024_0001
Intensity [arbitrary, not to scale]
PCT/US2005/037648 2004-12-09 2005-10-18 Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission WO2006062588A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05810227A EP1831934A1 (en) 2004-12-09 2005-10-18 Adapting short-wavelength led's for polychromatic, broadband, or "white" emission
JP2007545453A JP5059617B2 (en) 2004-12-09 2005-10-18 Adaptive short wavelength LED for multicolor, broadband or "white" emission

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/009,217 2004-12-09
US11/009,217 US7402831B2 (en) 2004-12-09 2004-12-09 Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission

Publications (1)

Publication Number Publication Date
WO2006062588A1 true WO2006062588A1 (en) 2006-06-15

Family

ID=35954099

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/037648 WO2006062588A1 (en) 2004-12-09 2005-10-18 Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission

Country Status (7)

Country Link
US (5) US7402831B2 (en)
EP (1) EP1831934A1 (en)
JP (1) JP5059617B2 (en)
KR (1) KR20070093092A (en)
CN (1) CN100490194C (en)
TW (1) TW200637032A (en)
WO (1) WO2006062588A1 (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009094980A1 (en) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Optical-electronic component and method for production thereof
WO2009085594A3 (en) * 2007-12-28 2009-09-11 3M Innovative Properties Company Down-converted light source with uniform wavelength emission
EP2122695A1 (en) * 2007-03-08 2009-11-25 3M Innovative Properties Company Array of luminescent elements
EP2232591A2 (en) * 2007-12-10 2010-09-29 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
WO2010108811A1 (en) * 2009-03-25 2010-09-30 Osram Opto Semiconductors Gmbh Light diode
WO2010129464A1 (en) * 2009-05-05 2010-11-11 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with leds and methods of manufacture
JP2011507273A (en) * 2007-12-10 2011-03-03 スリーエム イノベイティブ プロパティズ カンパニー Semiconductor light emitting device and manufacturing method thereof
WO2011153153A1 (en) * 2010-06-04 2011-12-08 3M Innovative Properties Company Multicolored light converting led with minimal absorption
US8304976B2 (en) 2009-06-30 2012-11-06 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
US8541803B2 (en) 2009-05-05 2013-09-24 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction
US8629611B2 (en) 2009-06-30 2014-01-14 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
US8994071B2 (en) 2009-05-05 2015-03-31 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
US10553748B2 (en) 2014-05-27 2020-02-04 Osram Opto Semiconductors Gmbh Semiconductor component and illumination device
DE102018124473A1 (en) * 2018-10-04 2020-04-09 Osram Opto Semiconductors Gmbh OPTOELECTRONIC COMPONENT, METHOD FOR CONTROLLING AN OPTOELECTRONIC COMPONENT AND LIGHTING DEVICE
CN114175281A (en) * 2019-07-30 2022-03-11 佳能株式会社 Light-emitting element and method for manufacturing light-emitting element

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
FR2888664B1 (en) * 2005-07-18 2008-05-02 Centre Nat Rech Scient METHOD FOR MAKING A BIPOLAR HETEROJUNCTION TRANSISTOR
FR2898434B1 (en) * 2006-03-13 2008-05-23 Centre Nat Rech Scient MONOLITHIC WHITE ELECTROLUMINESCENT DIODE
US7674641B2 (en) * 2006-04-12 2010-03-09 Atomic Energy Council Method for fabricating white-light-emitting flip-chip diode having silicon quantum dots
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7863634B2 (en) * 2006-06-12 2011-01-04 3M Innovative Properties Company LED device with re-emitting semiconductor construction and reflector
KR20090018631A (en) * 2006-06-12 2009-02-20 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Led device with re-emitting semiconductor construction and converging optical element
US7952110B2 (en) 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US7902542B2 (en) * 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
JP5568305B2 (en) 2006-09-29 2014-08-06 ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド Method and apparatus for infrared detection and display
US20080149951A1 (en) * 2006-12-22 2008-06-26 Industrial Technology Research Institute Light emitting device
TWI404228B (en) 2007-07-12 2013-08-01 Epistar Corp Semiconductor light emitting device and method
CN101821866B (en) * 2007-10-08 2012-05-23 3M创新有限公司 Light emitting diode with bonded semiconductor wavelength converter
JP5398742B2 (en) * 2008-01-31 2014-01-29 コーニンクレッカ フィリップス エヌ ヴェ Light emitting device
RU2010138903A (en) * 2008-02-22 2012-03-27 Конинклейке Филипс Электроникс Н.В. (Nl) BILATERAL ORGANIC Luminous Emitting Diode (OLED)
JP2011523212A (en) * 2008-06-05 2011-08-04 スリーエム イノベイティブ プロパティズ カンパニー Light emitting diode with semiconductor wavelength converter bonded
FR2932608B1 (en) * 2008-06-13 2011-04-22 Centre Nat Rech Scient METHOD FOR GROWING NITRIDE OF ELEMENTS OF GROUP III.
CN102124583B (en) * 2008-06-26 2013-06-19 3M创新有限公司 Semiconductor light converting construction
US8461608B2 (en) * 2008-06-26 2013-06-11 3M Innovative Properties Company Light converting construction
EP2308102A4 (en) * 2008-06-26 2014-05-07 3M Innovative Properties Co Method of fabricating light extractor
JP2011526074A (en) * 2008-06-26 2011-09-29 スリーエム イノベイティブ プロパティズ カンパニー Semiconductor optical conversion structure
US20110101402A1 (en) * 2008-06-26 2011-05-05 Jun-Ying Zhang Semiconductor light converting construction
JP2010062201A (en) * 2008-09-01 2010-03-18 Sony Corp Semiconductor light emitting element and method of manufacturing the same
US20110156002A1 (en) * 2008-09-04 2011-06-30 Leatherdale Catherine A Light source having light blocking components
US20110254019A1 (en) * 2008-09-26 2011-10-20 Hsu Chen Adapted semiconductor light emitting device and method for manufacturing the same
US9721825B2 (en) 2008-12-02 2017-08-01 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
US9601530B2 (en) 2008-12-02 2017-03-21 Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
WO2014039693A1 (en) * 2012-09-07 2014-03-13 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
WO2010138811A2 (en) 2009-05-29 2010-12-02 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
WO2010074987A2 (en) 2008-12-24 2010-07-01 3M Innovative Properties Company Light generating device having double-sided wavelength converter
WO2010075177A2 (en) 2008-12-24 2010-07-01 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
CN102317845B (en) * 2009-02-13 2015-02-18 3M创新有限公司 Stereoscopic 3D display device
EP2422371A2 (en) 2009-04-20 2012-02-29 3M Innovative Properties Company Non-radiatively pumped wavelength converter
WO2010123814A1 (en) 2009-04-20 2010-10-28 3M Innovative Properties Company Non-radiatively pumped wavelength converter
US8192048B2 (en) * 2009-04-22 2012-06-05 3M Innovative Properties Company Lighting assemblies and systems
EP2427922A1 (en) 2009-05-05 2012-03-14 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
DE102009023351A1 (en) 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
WO2011014490A2 (en) 2009-07-30 2011-02-03 3M Innovative Properties Company Pixelated led
CN101621103B (en) * 2009-07-31 2011-05-11 苏州纳维科技有限公司 Light-emitting diode (LED) and growing method thereof
EP2499663A2 (en) * 2009-11-09 2012-09-19 3M Innovative Properties Company Etching process for semiconductors
EP2499664A2 (en) * 2009-11-09 2012-09-19 3M Innovative Properties Company Process for anisotropic etching of semiconductors
JP2013511844A (en) * 2009-11-18 2013-04-04 スリーエム イノベイティブ プロパティズ カンパニー Novel wet etchants and methods for II-VI semiconductors
WO2011066396A2 (en) * 2009-11-24 2011-06-03 University Of Florida Research Foundation, Inc. Method and apparatus for sensing infrared radiation
WO2012021196A2 (en) 2010-05-21 2012-02-16 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method for manufacturing electronic devices and electronic devices thereof
WO2012021197A2 (en) 2010-05-21 2012-02-16 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof
EP2577747B1 (en) 2010-05-24 2018-10-17 University of Florida Research Foundation, Inc. Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
GB2484711A (en) * 2010-10-21 2012-04-25 Optovate Ltd Illumination Apparatus
EP2641277A4 (en) 2010-11-18 2016-06-15 3M Innovative Properties Co Light emitting diode component comprising polysilazane bonding layer
DE102011014845B4 (en) 2011-03-23 2023-05-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Semiconductor light-emitting device and method of manufacturing a semiconductor light-emitting device
CN102731533B (en) 2011-04-12 2016-08-10 精工爱普生株式会社 Thiadiazoles based compound, light-emitting component compound, light-emitting component, light-emitting device, certification device and electronic equipment
JP5765034B2 (en) 2011-04-18 2015-08-19 セイコーエプソン株式会社 Thiadiazole compounds, compounds for light emitting devices, light emitting devices, light emitting devices, authentication devices, and electronic devices
BR112013033122A2 (en) 2011-06-30 2017-01-24 Nanoholdings Llc method and apparatus for detecting gain infrared radiation
JP5790279B2 (en) 2011-08-09 2015-10-07 セイコーエプソン株式会社 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE
KR20130018547A (en) 2011-08-09 2013-02-25 세이코 엡슨 가부시키가이샤 Thiadiazole, light-emitting element, light-emitting apparatus, authentication apparatus, and electronic device
US9331252B2 (en) 2011-08-23 2016-05-03 Micron Technology, Inc. Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods
US8975614B2 (en) * 2011-08-23 2015-03-10 Micron Technology, Inc. Wavelength converters for solid state lighting devices, and associated systems and methods
JP5970811B2 (en) 2011-12-28 2016-08-17 セイコーエプソン株式会社 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE
US9324952B2 (en) 2012-02-28 2016-04-26 Seiko Epson Corporation Thiadiazole, compound for light-emitting elements, light-emitting element, light-emitting apparatus, authentication apparatus, and electronic device
CN107011365A (en) 2012-10-18 2017-08-04 精工爱普生株式会社 Thiadiazoles system compound, light-emitting component compound, light-emitting component, light-emitting device, authentication device and electronic equipment
FR3003402B1 (en) 2013-03-14 2016-11-04 Centre Nat Rech Scient MONOLITHIC LIGHT EMITTING DEVICE.
WO2017034645A2 (en) 2015-06-09 2017-03-02 ARIZONA BOARD OF REGENTS, a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY Method of providing an electronic device and electronic device thereof
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
WO2015156891A2 (en) 2014-01-23 2015-10-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
FR3019380B1 (en) * 2014-04-01 2017-09-01 Centre Nat Rech Scient PIXEL SEMICONDUCTOR, MATRIX OF SUCH PIXELS, SEMICONDUCTOR STRUCTURE FOR CARRYING OUT SUCH PIXELS AND METHODS OF MAKING SAME
EP3143641A4 (en) 2014-05-13 2018-01-17 Arizona Board of Regents, a Body Corporate of the State of Arizona acting for and on behalf of Arizona State University Method of providing an electronic device and electronic device thereof
US10446582B2 (en) 2014-12-22 2019-10-15 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an imaging system and imaging system thereof
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
DE102015105693B4 (en) 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Radiation-emitting semiconductor component and method for generating radiation using a radiation-emitting semiconductor component
US10749058B2 (en) 2015-06-11 2020-08-18 University Of Florida Research Foundation, Incorporated Monodisperse, IR-absorbing nanoparticles and related methods and devices
US10136123B2 (en) 2015-10-30 2018-11-20 Disney Enterprises, Inc. Display system with normalized show lighting for wavelength multiplex visualization (WMV) environment
DE102015119817A1 (en) * 2015-11-17 2017-05-18 Osram Opto Semiconductors Gmbh Semiconductor device
DE102017103856A1 (en) * 2017-02-24 2018-08-30 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
FR3066045A1 (en) * 2017-05-02 2018-11-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives LIGHT-EMITTING DIODE COMPRISING WAVELENGTH CONVERSION LAYERS
US11100844B2 (en) 2018-04-25 2021-08-24 Raxium, Inc. Architecture for light emitting elements in a light field display

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001066997A2 (en) * 2000-03-06 2001-09-13 Teledyne Lighting And Display Products, Inc. Lighting apparatus having quantum dot layer
US20020139984A1 (en) * 2001-01-26 2002-10-03 Kabushiki Kaisha Toshiba Semiconductor light emitting element
WO2002097902A1 (en) * 2001-05-31 2002-12-05 Epivalley Co., Ltd. Semiconductor led device
EP1363335A2 (en) * 2002-05-15 2003-11-19 Sumitomo Electric Industries, Ltd. White color light emitting device
EP1469516A1 (en) * 2003-04-14 2004-10-20 Epitech Corporation, Ltd. White-light emitting semiconductor device using a plurality of light emitting diode chips

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US42861A (en) * 1864-05-24 Improvement in machinery for winding conical bobbins
US4527179A (en) * 1981-02-09 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Non-single-crystal light emitting semiconductor device
FR2538171B1 (en) * 1982-12-21 1986-02-28 Thomson Csf SURFACE EMITTING LIGHT EMITTING DIODE
US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
US5459337A (en) * 1993-02-19 1995-10-17 Sony Corporation Semiconductor display device with red, green and blue emission
JPH06244506A (en) 1993-02-19 1994-09-02 Sony Corp Semiconductor display and its manufacture
JPH06268331A (en) * 1993-03-11 1994-09-22 Toshiba Corp Semiconductor light emitting device
JP2991616B2 (en) * 1994-06-30 1999-12-20 シャープ株式会社 Semiconductor light emitting device
US5646419A (en) * 1995-04-07 1997-07-08 California Institute Of Technology n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same
DE19542241C2 (en) * 1995-11-13 2003-01-09 Siemens Ag Optoelectronic component in II-VI semiconductor material
JPH09181398A (en) * 1995-12-25 1997-07-11 Sony Corp Semiconductor light emitting device
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
DE19703615A1 (en) * 1997-01-31 1998-08-06 Siemens Ag Optoelectronic semiconductor component
DE19729396A1 (en) * 1997-07-09 1999-01-14 Siemens Ag Electrical contact for a II-VI semiconductor device and method for producing the electrical contact
JP3068075B2 (en) * 1998-01-17 2000-07-24 ハンベック コーポレイション Horizontal reactor for compound semiconductor production
JP3559446B2 (en) * 1998-03-23 2004-09-02 株式会社東芝 Semiconductor light emitting element and semiconductor light emitting device
US6294795B1 (en) 1998-04-28 2001-09-25 Canare Electric Co., Ltd. Light-receiving device with quantum-wave interference layers
TW406442B (en) * 1998-07-09 2000-09-21 Sumitomo Electric Industries White colored LED and intermediate colored LED
US6252896B1 (en) * 1999-03-05 2001-06-26 Agilent Technologies, Inc. Long-Wavelength VCSEL using buried bragg reflectors
US6303404B1 (en) * 1999-05-28 2001-10-16 Yong Tae Moon Method for fabricating white light emitting diode using InGaN phase separation
AU5463700A (en) * 1999-06-04 2000-12-28 Trustees Of Boston University Photon recycling semiconductor multi-wavelength light-emitting diodes
DE19952932C1 (en) * 1999-11-03 2001-05-03 Osram Opto Semiconductors Gmbh LED white light source with broadband excitation
US6504171B1 (en) * 2000-01-24 2003-01-07 Lumileds Lighting, U.S., Llc Chirped multi-well active region LED
JP3486900B2 (en) * 2000-02-15 2004-01-13 ソニー株式会社 Light emitting device and optical device using the same
JP4008656B2 (en) * 2000-12-27 2007-11-14 株式会社東芝 Semiconductor light emitting device
TW497277B (en) * 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
JP4559661B2 (en) 2000-05-19 2010-10-13 アイシン・エーアイ株式会社 Manual transmission
KR100382481B1 (en) * 2000-06-09 2003-05-01 엘지전자 주식회사 White Light Emitting Diode and Fabricating Method for the same
DE10036940A1 (en) * 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Luminescence conversion LED
JP2002217456A (en) * 2001-01-19 2002-08-02 Ngk Insulators Ltd Semiconductor light-emitting device
US6711194B2 (en) 2001-02-08 2004-03-23 The Furukawa Electric Co., Ltd. High output power semiconductor laser diode
AUPR551201A0 (en) * 2001-06-01 2001-07-12 Garvan Institute Of Medical Research Neuronal cell-specific promoter
JP3791765B2 (en) * 2001-06-08 2006-06-28 豊田合成株式会社 Group III nitride compound semiconductor light emitting device
US6837605B2 (en) * 2001-11-28 2005-01-04 Osram Opto Semiconductors Gmbh Led illumination system
US6711195B2 (en) 2002-02-28 2004-03-23 Agilent Technologies, Inc. Long-wavelength photonic device with GaAsSb quantum-well layer
US6831306B1 (en) * 2002-03-06 2004-12-14 Daktronics, Inc. Extended length light emitting diode
JP2004047748A (en) 2002-07-12 2004-02-12 Stanley Electric Co Ltd Light-emitting diode
JP2004072047A (en) 2002-08-09 2004-03-04 Sumitomo Electric Ind Ltd White light emitting device, and substrate for white light emitting devices and its manufacturing method
US6791104B2 (en) * 2002-09-26 2004-09-14 Wisconsin Alumni Research Foundation Type II quantum well optoelectronic devices
MY149573A (en) * 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
TW591811B (en) * 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
JP3717480B2 (en) * 2003-01-27 2005-11-16 ローム株式会社 Semiconductor light emitting device
TWI289937B (en) * 2003-03-04 2007-11-11 Topco Scient Co Ltd White light LED
US7126160B2 (en) * 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7223998B2 (en) * 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US20060081858A1 (en) * 2004-10-14 2006-04-20 Chung-Hsiang Lin Light emitting device with omnidirectional reflectors
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US9018619B2 (en) * 2006-10-09 2015-04-28 Cree, Inc. Quantum wells for light conversion

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001066997A2 (en) * 2000-03-06 2001-09-13 Teledyne Lighting And Display Products, Inc. Lighting apparatus having quantum dot layer
US20020139984A1 (en) * 2001-01-26 2002-10-03 Kabushiki Kaisha Toshiba Semiconductor light emitting element
WO2002097902A1 (en) * 2001-05-31 2002-12-05 Epivalley Co., Ltd. Semiconductor led device
EP1363335A2 (en) * 2002-05-15 2003-11-19 Sumitomo Electric Industries, Ltd. White color light emitting device
EP1469516A1 (en) * 2003-04-14 2004-10-20 Epitech Corporation, Ltd. White-light emitting semiconductor device using a plurality of light emitting diode chips

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
25 November 2006 (2006-11-25), Retrieved from the Internet <URL:http://www.qdots.com/live/render/content.asp?id=71> [retrieved on 20060331] *
CHEN W R ET AL: "ZNCDSETE-BASED ORANGE LIGHT-EMITTING DIODE", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 14, no. 8, August 2002 (2002-08-01), pages 1061 - 1063, XP001132217, ISSN: 1041-1135 *
Retrieved from the Internet <URL:http://web.archive.org/web/*/http://www.qdots.com/live/render/content.asp?id=71> [retrieved on 20060331] *
WEN RAY CHEN ET AL: "ZNSE-BASED MIXED-COLOR LEDS", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 16, no. 5, May 2004 (2004-05-01), pages 1259 - 1261, XP001212198, ISSN: 1041-1135 *

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2122695A1 (en) * 2007-03-08 2009-11-25 3M Innovative Properties Company Array of luminescent elements
EP2122695A4 (en) * 2007-03-08 2013-09-11 3M Innovative Properties Co Array of luminescent elements
JP2011507273A (en) * 2007-12-10 2011-03-03 スリーエム イノベイティブ プロパティズ カンパニー Semiconductor light emitting device and manufacturing method thereof
EP2232591A4 (en) * 2007-12-10 2013-12-25 3M Innovative Properties Co Down-converted light emitting diode with simplified light extraction
EP2232591A2 (en) * 2007-12-10 2010-09-29 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
JP2011507272A (en) * 2007-12-10 2011-03-03 スリーエム イノベイティブ プロパティズ カンパニー Down-converting light-emitting diode with simple light extraction method
US8338838B2 (en) 2007-12-28 2012-12-25 3M Innovative Properties Company Down-converted light source with uniform wavelength emission
WO2009085594A3 (en) * 2007-12-28 2009-09-11 3M Innovative Properties Company Down-converted light source with uniform wavelength emission
JP2011508450A (en) * 2007-12-28 2011-03-10 スリーエム イノベイティブ プロパティズ カンパニー Downconverted light source with uniform wavelength emission
US8686451B2 (en) 2008-01-31 2014-04-01 Osram Opto Semiconductor Gmbh Optical-electronic component and method for production thereof
WO2009094980A1 (en) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Optical-electronic component and method for production thereof
WO2010108811A1 (en) * 2009-03-25 2010-09-30 Osram Opto Semiconductors Gmbh Light diode
CN102362348A (en) * 2009-03-25 2012-02-22 欧司朗光电半导体有限公司 Light diode
US8994071B2 (en) 2009-05-05 2015-03-31 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
US8541803B2 (en) 2009-05-05 2013-09-24 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction
US9293622B2 (en) 2009-05-05 2016-03-22 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture
WO2010129464A1 (en) * 2009-05-05 2010-11-11 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with leds and methods of manufacture
US8304976B2 (en) 2009-06-30 2012-11-06 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
US8629611B2 (en) 2009-06-30 2014-01-14 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
US8710533B2 (en) 2010-06-04 2014-04-29 3M Innovative Properties Company Multicolored light converting LED with minimal absorption
WO2011153153A1 (en) * 2010-06-04 2011-12-08 3M Innovative Properties Company Multicolored light converting led with minimal absorption
US10553748B2 (en) 2014-05-27 2020-02-04 Osram Opto Semiconductors Gmbh Semiconductor component and illumination device
US11393949B2 (en) 2014-05-27 2022-07-19 Osram Opto Semiconductors Gmbh Semiconductor component and illumination device
DE102018124473A1 (en) * 2018-10-04 2020-04-09 Osram Opto Semiconductors Gmbh OPTOELECTRONIC COMPONENT, METHOD FOR CONTROLLING AN OPTOELECTRONIC COMPONENT AND LIGHTING DEVICE
US11594659B2 (en) 2018-10-04 2023-02-28 Osram Opto Semiconductors Gmbh Optoelectronic component, method for driving an optoelectronic component, and illumination device
CN114175281A (en) * 2019-07-30 2022-03-11 佳能株式会社 Light-emitting element and method for manufacturing light-emitting element
EP4006995A4 (en) * 2019-07-30 2023-08-30 Canon Kabushiki Kaisha Light-emitting element, and method for manufacturing light-emitting element

Also Published As

Publication number Publication date
US20070051967A1 (en) 2007-03-08
CN101076897A (en) 2007-11-21
JP2008523615A (en) 2008-07-03
US7902543B2 (en) 2011-03-08
CN100490194C (en) 2009-05-20
US7700938B2 (en) 2010-04-20
US7402831B2 (en) 2008-07-22
US20080272387A1 (en) 2008-11-06
JP5059617B2 (en) 2012-10-24
US20060124917A1 (en) 2006-06-15
US20100155694A1 (en) 2010-06-24
KR20070093092A (en) 2007-09-17
EP1831934A1 (en) 2007-09-12
US20080272362A1 (en) 2008-11-06
US7737430B2 (en) 2010-06-15
US7700939B2 (en) 2010-04-20
TW200637032A (en) 2006-10-16

Similar Documents

Publication Publication Date Title
US7700939B2 (en) Adapting short-wavelength LED&#39;s for polychromatic, broadband, or “white” emission
EP1825526B1 (en) Polychromatic led&#39;s and related semiconductor devices
US8148742B2 (en) Type II broadband or polychromatic LEDs
US7902542B2 (en) Adapted LED device with re-emitting semiconductor construction
CN115188862A (en) Flip-chip type light emitting diode structure and manufacturing method thereof
JP2022163951A (en) Flip chip type light emitting diode structure and manufacturing method capable of emitting light in three primary color spectrum

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2005810227

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2007545453

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 200580042502.X

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 1020077015504

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2005810227

Country of ref document: EP