WO2006060302A3 - Wide bandgap semiconductor lateral trench fet and method of making - Google Patents

Wide bandgap semiconductor lateral trench fet and method of making Download PDF

Info

Publication number
WO2006060302A3
WO2006060302A3 PCT/US2005/042871 US2005042871W WO2006060302A3 WO 2006060302 A3 WO2006060302 A3 WO 2006060302A3 US 2005042871 W US2005042871 W US 2005042871W WO 2006060302 A3 WO2006060302 A3 WO 2006060302A3
Authority
WO
WIPO (PCT)
Prior art keywords
devices
channel
making
source
wide bandgap
Prior art date
Application number
PCT/US2005/042871
Other languages
French (fr)
Other versions
WO2006060302A2 (en
Inventor
Igor Sankin
Jeffrey B Casady
Jospeh N Merrett
Original Assignee
Semisouth Lab Inc
Igor Sankin
Jeffrey B Casady
Jospeh N Merrett
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semisouth Lab Inc, Igor Sankin, Jeffrey B Casady, Jospeh N Merrett filed Critical Semisouth Lab Inc
Priority to CA002589028A priority Critical patent/CA2589028A1/en
Priority to EP05852246A priority patent/EP1825522A4/en
Priority to CN200580046793XA priority patent/CN101317271B/en
Priority to NZ555625A priority patent/NZ555625A/en
Priority to JP2007544414A priority patent/JP5417585B2/en
Priority to KR1020077014819A priority patent/KR101224810B1/en
Priority to AU2005312118A priority patent/AU2005312118B2/en
Publication of WO2006060302A2 publication Critical patent/WO2006060302A2/en
Publication of WO2006060302A3 publication Critical patent/WO2006060302A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8122—Vertical transistors

Abstract

A wide bandgap semiconductor junction field effect transistor comprises source, channel, drift, and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift, and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions, can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemeneted for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monothilic microwave integrated circuits. Methods for making the transistors and inte rated circuits com rising the devices are also described.
PCT/US2005/042871 2004-12-01 2005-11-30 Wide bandgap semiconductor lateral trench fet and method of making WO2006060302A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CA002589028A CA2589028A1 (en) 2004-12-01 2005-11-30 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors
EP05852246A EP1825522A4 (en) 2004-12-01 2005-11-30 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors
CN200580046793XA CN101317271B (en) 2004-12-01 2005-11-30 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making
NZ555625A NZ555625A (en) 2004-12-01 2005-11-30 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and intergrated circuits incorperating the transistors
JP2007544414A JP5417585B2 (en) 2004-12-01 2005-11-30 Lateral trench field effect transistor in a wide bandgap semiconductor material, method of manufacturing the transistor, and integrated circuit incorporating the transistor
KR1020077014819A KR101224810B1 (en) 2004-12-01 2005-11-30 Lateral trench field effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors
AU2005312118A AU2005312118B2 (en) 2004-12-01 2005-11-30 Wide bandgap semiconductor lateral trench FET and method of making

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/999,954 US7119380B2 (en) 2004-12-01 2004-12-01 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors
US10/999,954 2004-12-01

Publications (2)

Publication Number Publication Date
WO2006060302A2 WO2006060302A2 (en) 2006-06-08
WO2006060302A3 true WO2006060302A3 (en) 2007-12-13

Family

ID=36565582

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/042871 WO2006060302A2 (en) 2004-12-01 2005-11-30 Wide bandgap semiconductor lateral trench fet and method of making

Country Status (9)

Country Link
US (2) US7119380B2 (en)
EP (2) EP2375451A3 (en)
JP (1) JP5417585B2 (en)
KR (1) KR101224810B1 (en)
CN (1) CN101317271B (en)
AU (1) AU2005312118B2 (en)
CA (1) CA2589028A1 (en)
NZ (1) NZ555625A (en)
WO (1) WO2006060302A2 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7642566B2 (en) * 2006-06-12 2010-01-05 Dsm Solutions, Inc. Scalable process and structure of JFET for small and decreasing line widths
US8193612B2 (en) * 2004-02-12 2012-06-05 International Rectifier Corporation Complimentary nitride transistors vertical and common drain
US7820511B2 (en) * 2004-07-08 2010-10-26 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
US20070029573A1 (en) * 2005-08-08 2007-02-08 Lin Cheng Vertical-channel junction field-effect transistors having buried gates and methods of making
US7745851B2 (en) * 2006-04-13 2010-06-29 Cree, Inc. Polytype hetero-interface high electron mobility device and method of making
US8269262B2 (en) * 2006-05-02 2012-09-18 Ss Sc Ip Llc Vertical junction field effect transistor with mesa termination and method of making the same
US7274083B1 (en) * 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
US8421119B2 (en) * 2006-09-13 2013-04-16 Rohm Co., Ltd. GaN related compound semiconductor element and process for producing the same and device having the same
JP2008118082A (en) * 2006-10-11 2008-05-22 New Japan Radio Co Ltd Nitride semiconductor device and method of manufacturing the same
US7501670B2 (en) 2007-03-20 2009-03-10 Velox Semiconductor Corporation Cascode circuit employing a depletion-mode, GaN-based FET
US7688117B1 (en) 2008-04-21 2010-03-30 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration N channel JFET based digital logic gate structure
KR20120032531A (en) * 2009-06-19 2012-04-05 에스에스 에스시 아이피, 엘엘시 Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith
CN102054699B (en) * 2009-11-05 2012-07-25 中芯国际集成电路制造(上海)有限公司 Method for improving junction depth property of semiconductor device
JP2011119512A (en) * 2009-12-04 2011-06-16 Denso Corp Semiconductor device and method of manufacturing the same
US8236640B2 (en) * 2009-12-18 2012-08-07 Intel Corporation Method of fabricating a semiconductor device having gate finger elements extended over a plurality of isolation regions formed in the source and drain regions
JP4985757B2 (en) * 2009-12-25 2012-07-25 株式会社デンソー Silicon carbide semiconductor device
JP2011159714A (en) * 2010-01-29 2011-08-18 Denso Corp Silicon carbide semiconductor device and manufacturing method therefor
JP5126245B2 (en) * 2010-02-12 2013-01-23 株式会社デンソー Silicon carbide semiconductor device having complementary junction field effect transistor and method of manufacturing the same
US9064887B2 (en) 2012-09-04 2015-06-23 Infineon Technologies Austria Ag Field-effect semiconductor device and manufacturing method therefor
CN104409335B (en) * 2014-11-18 2017-11-21 中国电子科技集团公司第五十五研究所 A kind of preparation method of the carborundum JFET grid structures with rectification
DE102015110490A1 (en) * 2015-06-30 2017-01-05 Infineon Technologies Austria Ag Semiconductor devices and a method of forming a semiconductor device
US9455701B1 (en) * 2015-10-02 2016-09-27 The United States Of America As Represented By The Secretary Of The Navy Apparatus and methods for modulating current / voltage response using multiple semi-conductive channel regions (SCR) produced from different integrated semiconductor structures
US10553494B2 (en) * 2016-11-29 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Breakdown resistant semiconductor apparatus and method of making same
US11247363B2 (en) 2018-01-23 2022-02-15 Oregon Tool, Inc. Saw chain presets
CN109273552B (en) * 2018-08-31 2020-04-21 东南大学 Single-row carrier photoelectric mixer and electromagnetic wave phased array antenna receiving front end
CN111129139B (en) * 2018-11-01 2021-03-30 西安电子科技大学 Self-aligned gate gallium nitride enhanced vertical power device based on suspension field plate
US11545585B2 (en) * 2020-08-21 2023-01-03 Monolithic Power Systems, Inc. Single sided channel mesa power junction field effect transistor
CN112420694B (en) * 2020-11-06 2023-06-23 电子科技大学 Reversible conduction silicon carbide JFET power device integrated with reverse Schottky freewheel diode
CN112599588B (en) * 2020-12-15 2023-08-25 陈小建 SiC semiconductor device and method for manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545297B1 (en) * 1998-05-13 2003-04-08 Micron Technology, Inc. High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown
US20050067630A1 (en) * 2003-09-25 2005-03-31 Zhao Jian H. Vertical junction field effect power transistor
US6943407B2 (en) * 2003-06-17 2005-09-13 International Business Machines Corporation Low leakage heterojunction vertical transistors and high performance devices thereof
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1204823B (en) 1963-04-30 1965-11-11 Hoechst Ag Process for polymerizing cyclic acetals individually or in admixture
US3767946A (en) 1972-07-17 1973-10-23 Western Electric Co Junction field effect transistor device for replacing a pentode
US4107725A (en) 1974-08-02 1978-08-15 Nippon Gakki Seizo Kabushiki Kaisha Compound field effect transistor
US4663547A (en) 1981-04-24 1987-05-05 General Electric Company Composite circuit for power semiconductor switching
US4587712A (en) 1981-11-23 1986-05-13 General Electric Company Method for making vertical channel field controlled device employing a recessed gate structure
JPS59147467A (en) * 1983-02-12 1984-08-23 New Japan Radio Co Ltd Static induction transistor
US4945394A (en) * 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
JPH02126678A (en) 1988-11-07 1990-05-15 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US5264713A (en) 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
JP3070182B2 (en) * 1991-09-27 2000-07-24 日本電気株式会社 Manufacturing method of electrostatic induction transistor
JPH05243256A (en) * 1992-03-02 1993-09-21 Matsushita Electric Ind Co Ltd Heterojunction bipolar transistor and manufacture thereof
JP3229012B2 (en) * 1992-05-21 2001-11-12 株式会社東芝 Method for manufacturing semiconductor device
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
US5391895A (en) * 1992-09-21 1995-02-21 Kobe Steel Usa, Inc. Double diamond mesa vertical field effect transistor
US5798539A (en) * 1992-12-10 1998-08-25 Daimler Benz Ag Bipolar transistor for very high frequencies
US5610085A (en) 1993-11-29 1997-03-11 Texas Instruments Incorporated Method of making a vertical FET using epitaxial overgrowth
DE4430732C2 (en) * 1994-08-30 1998-07-02 Daimler Benz Ag Vertical high power field effect transistor and method of manufacturing the same
US5710455A (en) 1996-07-29 1998-01-20 Motorola Lateral MOSFET with modified field plates and damage areas
US5714777A (en) * 1997-02-19 1998-02-03 International Business Machines Corporation Si/SiGe vertical junction field effect transistor
US5903020A (en) * 1997-06-18 1999-05-11 Northrop Grumman Corporation Silicon carbide static induction transistor structure
US5945701A (en) 1997-12-19 1999-08-31 Northrop Grumman Corporation Static induction transistor
US6156611A (en) 1998-07-20 2000-12-05 Motorola, Inc. Method of fabricating vertical FET with sidewall gate electrode
US6600192B1 (en) 1998-10-09 2003-07-29 The Kansai Electric Power Co., Inc. Vertical field-effect semiconductor device with buried gate region
KR100661691B1 (en) * 1999-12-24 2006-12-26 스미토모덴키고교가부시키가이샤 Junction field-effect transistor and method of manufacture thereof
US6461980B1 (en) * 2000-01-28 2002-10-08 Applied Materials, Inc. Apparatus and process for controlling the temperature of a substrate in a plasma reactor chamber
JP2001308102A (en) 2000-04-19 2001-11-02 Nippon Telegr & Teleph Corp <Ntt> Three-terminal electronic device
DE10036208B4 (en) 2000-07-25 2007-04-19 Siced Electronics Development Gmbh & Co. Kg Semiconductor structure with buried island area and contact area
JP2002076020A (en) 2000-08-31 2002-03-15 Sumitomo Electric Ind Ltd Semiconductor device
US7009209B2 (en) 2001-01-03 2006-03-07 Mississippi State University Research And Technology Corporation (Rtc) Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
US6503782B2 (en) 2001-03-02 2003-01-07 Mississippi State University Research And Technology Corporation (Rtc) Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors
JP2003031592A (en) 2001-07-19 2003-01-31 Auto Network Gijutsu Kenkyusho:Kk Junction field effect transistor and manufacturing method therefor
JP4127987B2 (en) 2001-08-23 2008-07-30 株式会社日立製作所 Semiconductor device
JP2003110117A (en) * 2001-09-28 2003-04-11 Nec Tokin Corp Method for manufacturing semiconductor device
US6841812B2 (en) 2001-11-09 2005-01-11 United Silicon Carbide, Inc. Double-gated vertical junction field effect power transistor
JP3765268B2 (en) 2001-12-21 2006-04-12 株式会社デンソー Silicon carbide semiconductor device and manufacturing method thereof
JP2003209263A (en) 2002-01-11 2003-07-25 Sumitomo Electric Ind Ltd Vertical junction field effect transistor and its manufacturing method
US7202528B2 (en) * 2004-12-01 2007-04-10 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545297B1 (en) * 1998-05-13 2003-04-08 Micron Technology, Inc. High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
US6943407B2 (en) * 2003-06-17 2005-09-13 International Business Machines Corporation Low leakage heterojunction vertical transistors and high performance devices thereof
US20050067630A1 (en) * 2003-09-25 2005-03-31 Zhao Jian H. Vertical junction field effect power transistor

Also Published As

Publication number Publication date
EP1825522A2 (en) 2007-08-29
EP2375451A3 (en) 2012-04-18
NZ555625A (en) 2011-01-28
US20070012946A1 (en) 2007-01-18
US20060113561A1 (en) 2006-06-01
CA2589028A1 (en) 2006-06-08
KR101224810B1 (en) 2013-01-21
US7242040B2 (en) 2007-07-10
AU2005312118A1 (en) 2006-06-08
CN101317271B (en) 2011-08-03
WO2006060302A2 (en) 2006-06-08
EP1825522A4 (en) 2009-04-01
CN101317271A (en) 2008-12-03
AU2005312118B2 (en) 2011-10-06
EP2375451A2 (en) 2011-10-12
JP2008522435A (en) 2008-06-26
JP5417585B2 (en) 2014-02-19
KR20070097475A (en) 2007-10-04
US7119380B2 (en) 2006-10-10

Similar Documents

Publication Publication Date Title
WO2006060302A3 (en) Wide bandgap semiconductor lateral trench fet and method of making
WO2007018578A3 (en) Vertical-channel junction fets having buried gates
US7968400B2 (en) Short channel LV, MV, and HV CMOS devices
US8338255B2 (en) Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation
US9905687B1 (en) Semiconductor device and method of making
WO2009105466A3 (en) Reduced leakage current field-effect transistor having asymmetric doping and fabrication method therefor
EP1542270A4 (en) Vertical junction field effect transistor and method for fabricating the same
US10446695B2 (en) Planar multi-implanted JFET
US20060292805A1 (en) Semiconductor device
TW200703646A (en) Trench MOSFET and method of manufacturing the same
KR20110100021A (en) Semiconductor device
US9716169B2 (en) Lateral double diffused metal oxide semiconductor field-effect transistor
TW200629552A (en) Strained silicon, gate engineered fermi-FETs
WO2006065324A3 (en) Transistors having buried n-type and p-type regions beneath the source region and methods of fabricating the same
KR20100064264A (en) Semiconductor device and method for manufacturing the same
US10121907B2 (en) Planar triple-implanted JFET
EP1284496A4 (en) Junction field-effect transistor and method of manufacture thereof
JP2004247496A (en) Silicon carbide semiconductor device and method for manufacturing it
KR20150076840A (en) Semiconductor device and method manufacturing the same
US8415720B2 (en) Vertically pinched junction field effect transistor
KR102424768B1 (en) P-type LATERAL DOUBLE DIFFUSED MOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
US9871135B2 (en) Semiconductor device and method of making
US9590096B2 (en) Vertical FET having reduced on-resistance
US9054181B2 (en) Semiconductor device, integrated circuit and method of manufacturing a semiconductor device
EP4156270A3 (en) Lateral diodes in stacked transistor technologies

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200580046793.X

Country of ref document: CN

AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KN KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

WWP Wipo information: published in national office

Ref document number: 555625

Country of ref document: NZ

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2589028

Country of ref document: CA

Ref document number: 2007544414

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2005852246

Country of ref document: EP

Ref document number: 555625

Country of ref document: NZ

WWE Wipo information: entry into national phase

Ref document number: 2005312118

Country of ref document: AU

WWE Wipo information: entry into national phase

Ref document number: 1020077014819

Country of ref document: KR

ENP Entry into the national phase

Ref document number: 2005312118

Country of ref document: AU

Date of ref document: 20051130

Kind code of ref document: A

WWP Wipo information: published in national office

Ref document number: 2005312118

Country of ref document: AU

WWP Wipo information: published in national office

Ref document number: 2005852246

Country of ref document: EP