WO2006058030A3 - Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys - Google Patents
Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys Download PDFInfo
- Publication number
- WO2006058030A3 WO2006058030A3 PCT/US2005/042376 US2005042376W WO2006058030A3 WO 2006058030 A3 WO2006058030 A3 WO 2006058030A3 US 2005042376 W US2005042376 W US 2005042376W WO 2006058030 A3 WO2006058030 A3 WO 2006058030A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- lead frame
- die
- mesas
- semiconductor package
- contacts
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32057—Shape in side view
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73151—Location prior to the connecting process on different surfaces
- H01L2224/73153—Bump and layer connectors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0101—Neon [Ne]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007543413A JP4575955B2 (en) | 2004-11-23 | 2005-11-22 | Semiconductor package and manufacturing method thereof |
DE112005002899.2T DE112005002899B4 (en) | 2004-11-23 | 2005-11-22 | Semiconductor device with a chip, which is arranged between a cup-shaped printed circuit board and a circuit board with mesas and valleys, and method for its preparation |
CN2005800467643A CN101443906B (en) | 2004-11-23 | 2005-11-22 | Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/996,148 | 2004-11-23 | ||
US10/996,149 US7238551B2 (en) | 2004-11-23 | 2004-11-23 | Method of fabricating semiconductor package including die interposed between cup-shaped lead frame having mesas and valleys |
US10/996,149 | 2004-11-23 | ||
US10/996,148 US7394150B2 (en) | 2004-11-23 | 2004-11-23 | Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006058030A2 WO2006058030A2 (en) | 2006-06-01 |
WO2006058030A3 true WO2006058030A3 (en) | 2009-04-02 |
Family
ID=36498476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/042376 WO2006058030A2 (en) | 2004-11-23 | 2005-11-22 | Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4575955B2 (en) |
DE (1) | DE112005002899B4 (en) |
WO (1) | WO2006058030A2 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7663211B2 (en) * | 2006-05-19 | 2010-02-16 | Fairchild Semiconductor Corporation | Dual side cooling integrated power device package and module with a clip attached to a leadframe in the package and the module and methods of manufacture |
JPWO2010147201A1 (en) * | 2009-06-19 | 2012-12-06 | 株式会社安川電機 | Power converter |
US8586419B2 (en) * | 2010-01-19 | 2013-11-19 | Vishay-Siliconix | Semiconductor packages including die and L-shaped lead and method of manufacture |
US8723311B2 (en) | 2011-06-30 | 2014-05-13 | Stmicroelectronics S.R.L. | Half-bridge electronic device with common heat sink on mounting surface |
ITMI20111219A1 (en) | 2011-06-30 | 2012-12-31 | St Microelectronics Srl | SYSTEM WITH SHARED HEAT SINK |
ITMI20111213A1 (en) | 2011-06-30 | 2012-12-31 | St Microelectronics Srl | SEMI-BRIDGE ELECTRONIC DEVICE WITH COMMON AUXILIARY HEAT SINK |
ITMI20111208A1 (en) | 2011-06-30 | 2012-12-31 | St Microelectronics Srl | SYSTEM WITH STABILIZED HEAT SINK |
ITMI20111217A1 (en) | 2011-06-30 | 2012-12-31 | St Microelectronics Srl | CONTAINER / SINK SYSTEM FOR ELECTRONIC COMPONENT |
ITMI20111218A1 (en) * | 2011-06-30 | 2012-12-31 | St Microelectronics Srl | HIGH SPEED POWER DEVICE? OF SWITCHING |
ITMI20111214A1 (en) | 2011-06-30 | 2012-12-31 | St Microelectronics Srl | POWER REDUCED THICKNESS DEVICE |
ITMI20111216A1 (en) | 2011-06-30 | 2012-12-31 | St Microelectronics Srl | ELECTRONIC POWER DEVICE WITH HIGH HEAT DISSIPATION AND STABILITY? |
WO2013157172A1 (en) * | 2012-04-20 | 2013-10-24 | パナソニック株式会社 | Semiconductor package and method for producing same, semiconductor module, and semiconductor device |
IT202000032267A1 (en) | 2020-12-23 | 2022-06-23 | St Microelectronics Srl | ENCAPSULATED ELECTRONIC DEVICE WITH HIGH THERMAL DISSIPATION AND RELATED MANUFACTURING PROCEDURE |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030052408A1 (en) * | 2000-04-13 | 2003-03-20 | Fairchild Semiconductor Corporation | Semiconductor device including molded wireless exposed drain packaging |
US6777800B2 (en) * | 2002-09-30 | 2004-08-17 | Fairchild Semiconductor Corporation | Semiconductor die package including drain clip |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6744124B1 (en) * | 1999-12-10 | 2004-06-01 | Siliconix Incorporated | Semiconductor die package including cup-shaped leadframe |
US6762067B1 (en) * | 2000-01-18 | 2004-07-13 | Fairchild Semiconductor Corporation | Method of packaging a plurality of devices utilizing a plurality of lead frames coupled together by rails |
US6870254B1 (en) * | 2000-04-13 | 2005-03-22 | Fairchild Semiconductor Corporation | Flip clip attach and copper clip attach on MOSFET device |
JP4085563B2 (en) * | 2000-08-24 | 2008-05-14 | 富士電機ホールディングス株式会社 | Power semiconductor module manufacturing method |
JP4102012B2 (en) * | 2000-09-21 | 2008-06-18 | 株式会社東芝 | Semiconductor device manufacturing method and semiconductor device |
US7119447B2 (en) * | 2001-03-28 | 2006-10-10 | International Rectifier Corporation | Direct fet device for high frequency application |
JP2002315357A (en) * | 2001-04-16 | 2002-10-25 | Hitachi Ltd | Inverter device |
JP3868777B2 (en) * | 2001-09-11 | 2007-01-17 | 株式会社東芝 | Semiconductor device |
JP2003188335A (en) * | 2001-12-14 | 2003-07-04 | Hitachi Ltd | Semiconductor device and its manufacturing method |
JP2004214368A (en) * | 2002-12-27 | 2004-07-29 | Matsushita Electric Ind Co Ltd | Semiconductor device |
-
2005
- 2005-11-22 WO PCT/US2005/042376 patent/WO2006058030A2/en active Application Filing
- 2005-11-22 JP JP2007543413A patent/JP4575955B2/en active Active
- 2005-11-22 DE DE112005002899.2T patent/DE112005002899B4/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030052408A1 (en) * | 2000-04-13 | 2003-03-20 | Fairchild Semiconductor Corporation | Semiconductor device including molded wireless exposed drain packaging |
US6777800B2 (en) * | 2002-09-30 | 2004-08-17 | Fairchild Semiconductor Corporation | Semiconductor die package including drain clip |
Also Published As
Publication number | Publication date |
---|---|
JP2008533694A (en) | 2008-08-21 |
DE112005002899B4 (en) | 2016-11-17 |
WO2006058030A2 (en) | 2006-06-01 |
DE112005002899T5 (en) | 2007-10-04 |
JP4575955B2 (en) | 2010-11-04 |
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