WO2006055003A1 - Systems and methods for creating crystallographic-orientation controlled poly-silicon films - Google Patents

Systems and methods for creating crystallographic-orientation controlled poly-silicon films Download PDF

Info

Publication number
WO2006055003A1
WO2006055003A1 PCT/US2004/039055 US2004039055W WO2006055003A1 WO 2006055003 A1 WO2006055003 A1 WO 2006055003A1 US 2004039055 W US2004039055 W US 2004039055W WO 2006055003 A1 WO2006055003 A1 WO 2006055003A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
grains
orientation
mask
laser
Prior art date
Application number
PCT/US2004/039055
Other languages
French (fr)
Inventor
James S. Im
Paul Christian Van Der Wilt
Original Assignee
The Trustees Of Columbia University In The City Ofnew York
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Trustees Of Columbia University In The City Ofnew York filed Critical The Trustees Of Columbia University In The City Ofnew York
Priority to JP2007543001A priority Critical patent/JP5068171B2/en
Priority to PCT/US2004/039055 priority patent/WO2006055003A1/en
Priority to EP04811722A priority patent/EP1812958A1/en
Priority to KR1020077013682A priority patent/KR101212378B1/en
Publication of WO2006055003A1 publication Critical patent/WO2006055003A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Definitions

  • FIG. IA illustrate low- temperature poly-silicon (poly-si) (LTPS) microstructures that can be obtained by laser induced melting and solidification. The process typically uses a long, narrow beam shape that is continuously advanced over the substrate surface, so that the beam can potentially irradiate the entire semiconductor thin film in a single scan across the surface.
  • LTPS low- temperature poly-silicon
  • the process typically uses a long, narrow beam shape that is continuously advanced over the substrate surface, so that the beam can potentially irradiate the entire semiconductor thin film in a single scan across the surface.
  • ELA produces small-grained polycrystalline films; however, the method often suffers from microstructural non-uniformities which can be caused by pulse to pulse energy density fluctuations and/or non-uniform beam intensity profiles.
  • FIG. 2 is an image of the random microstructure that results from ELA. The Si film is irradiated multiple times to create the random polycrystalline film with a uniform grain size.
  • Sequential lateral solidification (SLS) using an excimer laser is one method that has been used to form high quality polycrystalline films having large and uniform grains.
  • SLS is a crystallization process that provides elongated grains of a crystallized material in predefined locations on a film.
  • FIGS. IB-ID illustrate microstructures that can be obtained by SLS.
  • a large-grained polycrystalline film can exhibit enhanced switching characteristics because the reduced number of grain boundaries in the direction of electron flow provides higher electron mobility.
  • SLS processing controls the location of grain boundaries.
  • FIGS. 3A-3F illustrate the SLS process schematically.
  • an initially amorphous or polycrystalline film for example, a continuous wave (CW) - processed Si film, an as-deposited film, or solid phase crystallized film
  • the beamlet is formed, for example, by passing a laser beam pulse through a slotted mask, which is projected onto the surface of the silicon film.
  • the beamlet melts the amorphous silicon and, upon cooling, the amorphous silicon film recrystallizes to form one or more crystals.
  • the crystals grow primarily inward from edges of the irradiated area toward the center.
  • a second beamlet irradiates the film at a location less than the "lateral growth length" from the previous beamlet.
  • crystal grains grow laterally from the crystal seeds of the polycrystalline material formed in the previous step.
  • the elongated crystal grains are generally perpendicular to the length of the narrow beamlet and are separated by grain boundaries that run approximately parallel to the long grain axes.
  • the total resistance to carrier transport is affected by the combination of barriers that a carrier has to cross as it travels under the influence of a given potential. Due to the additional number of grain boundaries that are crossed when the carrier travels in a direction perpendicular to the long grain axes of the polycrystalline material or when a carrier travels across a larger number of small grains, the carrier will experience higher resistance as compared to the carrier traveling parallel to long grain axes. Therefore, the performance of devices fabricated on polycrystalline films formed using SLS, such as TFTs, will depend upon the crystalline quality and microstructure of the TFT channel relative to the long grain axes, which corresponds to the main growth direction. [0006] To achieve acceptable system performance for devices that utilize a polycrystalline thin film there still remains a need to optimize manufacturing processes that provide a defined, crystallographic orientation of the crystal grains.
  • the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture.
  • the methods provide elongated grains or single-crystal islands of a specified crystallographic orientation.
  • a method of processing a film on a substrate includes providing a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation.
  • One preferred direction of crystallographic orientation is a direction normal to the surface of the film.
  • the process of sequential lateral solidification generally includes generating a plurality of laser beam pulses; directing the plurality of laser beam pulses through a mask to generate a plurality of patterned laser beams; irradiating a portion of a selected region of a film with one of the plurality of patterned beams, the beam having an intensity that is sufficient to melt throughout its entire thickness the irradiated portion of the film, wherein the irradiated portion of the film laterally crystallizes upon cooling.
  • the process includes repositioning the film to irradiate a subsequent portion of the selected region with patterned beams, such that the subsequent position overlaps with the previously irradiated portion permitting the further lateral growth of the crystal grains.
  • successive portions of the selected region are irradiated such that the film is substantially completely crystallized in a single traversal of the patterned beams over the selected region of the film.
  • completely crystallized it is meant that the selected region of the film possesses the desired microstructure and crystal orientation, so that no further laser scanning of the region is required.
  • the mask includes a dot-patterned mask and has opaque array patterns which include at least one of dot-shaped areas, hexagonal- shaped areas and rectangular shaped areas.
  • the textured film is generated by one of zone melt recrystallization, solid phase recrystallization, direct deposition methods, surface-energy driven secondary grain growth methods or by pulsed laser crystallization methods.
  • the direct deposition methods comprise one of chemical vapor deposition, sputtering and evaporation.
  • the pulsed laser crystallization methods include SLS or multiple-pulse ELA methods.
  • the film can be a metal film or a semiconductor film.
  • a system for processing a film on a substrate includes at least one, laser for generating a plurality of laser beam pulses; a film support for positioning the film that is capable of movement in at least one direction; a mask support; optics for directing a first set of laser beam pulses through a first mask to generate a textured film; optics for directing a second set of laser beams onto the textured film; and a controller for controlling the movement of the film support and mask support in conjunction with frequency of laser beam pulses.
  • a device comprising a polycrystalline thin film having periodically located grains in which each of the grains are predominantly of one crystallographic orientation.
  • the predominant crystallographic orientation is a ⁇ 111> orientation or in another embodiment is a ⁇ 100> orientation.
  • the periodically located grains form columns of elongated grains.
  • FIG. IA illustrates low temperature poly-silicon (LTPS) microstructures that are obtained for laser-induced melting and solidification.
  • LTPS low temperature poly-silicon
  • FIGS. IB-ID illustrate microstructures that are obtained by sequential lateral solidification (SLS).
  • FIG. 2 is an image of the random orientation of the microstructure that results from excimer laser annealing (ELA).
  • FIGS. 3A-3F illustrate schematically the processes involved in sequential lateral solidification (SLS).
  • FIG. 4 is a flow diagram of the hybrid sequential lateral solidification (SLS) methods in accordance with an embodiment of the present invention.
  • FIG. 5A is a schematic diagram of a dual-axis projection irradiation system used for SLS in accordance with an embodiment of the present invention.
  • FIG. 5B is an illustrative diagram showing a mask having a polka-dot pattern.
  • FIG. 5C illustrates the mask translation using the mask of FIG. 5B.
  • FIGS. 6A and 6B illustrate images of a crystallized film using electron back scatter diffraction for mapping crystallographic orientation resulting from the hybrid SLS process for ⁇ 111> islands after creation of the textured precursor and after the SLS process, respectively, and respective inverse pole figures, FIGS. 6A-1, and 6B-1, in accordance with an embodiment of the present invention.
  • FIGS. 7A-7C illustrate a crystallized film processed with the multiple- pulse grain enlargement of (111) textured precursor with ELA in accordance with an embodiment of the invention.
  • FIGS. 8 A and 8B illustrate images of a crystallized film using electron back scatter diffraction for mapping crystallographic orientation resulting from the hybrid SLS process for ⁇ 100> islands after the creation of the textured precursor and after the SLS process, respectively, and respective inverse pole figures, FIGS. 8A- 1, and 8B- 1 in accordance with an embodiment of the invention.
  • FIG. 9 illustrates an image of a crystallized film of the (100) textured precursor using rapid zone-melting recrystallization (ZMR) using a continuous-wave (CW) laser in accordance with an embodiment of the invention.
  • ZMR rapid zone-melting recrystallization
  • CW continuous-wave
  • FIGS. lOA-lOC illustrate transmission electron microscopy (TEM) images of mostly ⁇ 110>, ⁇ 111> and ⁇ 100> oriented islands, respectively.
  • TEM transmission electron microscopy
  • FIGS. 1 IA-11C illustrate the scanning electron microscopy images
  • FIGS. 12A-12C illustrate the scanning electron microscopy images (SEM) and the electron back scatter diffraction (EBSD) data of the mostly ⁇ 111> oriented islands corresponding to the image illustrated in FIG. 1OB.
  • SEM scanning electron microscopy images
  • EBSD electron back scatter diffraction
  • FIGS. 13A-13C illustrate the scanning electron microscopy images
  • SLS sequential sequential lateral solidification
  • the embodiments of the invention are predicated on the recognition that the crystal orientation of lateral crystal growth during SLS depends on the orientation of the material at the boundary of the irradiated region. Lateral crystal growth of a material from a solidus boundary defined by a textured crystal promotes growth of that crystallographic orientation.
  • hybrid SLS is a two-step process as illustrated in FIG. 4.
  • a textured precursor is produced or provided.
  • a textured film contains grains having predominantly the same crystallographic orientation in at least a single direction; however, they are randomly located on the surface and are of no particular size (microstructure). More specifically, if one crystallographic axis of most crystallites in a thin polycrystalline film points preferentially in a given direction, we refer to the microstructure as having a one-axial texture. For the embodiments described herein, the preferential direction of the one-axial texture is a direction normal to the surface of the crystallites. Thus, "texture” refers to a one-axial surface texture of the grains as used herein.
  • the degree of texture can vary depending upon the particular application. For example, a higher degree of texture is preferable for a thin film transistor (TFT) being used for a driver circuit as opposed to a TFT that is used for a switch circuit.
  • TFT thin film transistor
  • the second step 44 of the hybrid SLS process SLS is performed.
  • the lateral crystallization results in "location-controlled growth" of grain boundaries and elongated crystals of a desired crystallographic orientation.
  • Location-controlled growth referred to herein is defined as the controlled location of grains and grain boundaries using particular beam patterns and masks such as, for example, dot- patterned masks.
  • sequential lateral solidification is a crystallization process that provides elongated grains or single-crystal islands of a crystallized material in predefined locations on a film.
  • SLS is not able to fully define the crystallographic orientation of those grains.
  • growth begins with existing grains as it is epitaxial growth and, thus, the process cannot provide for growth in a preferred orientation.
  • Epitaxial growth is referred to as the growth of the crystals of one material on the crystal face of another material, such that the crystalline grains of both materials have the same structural orientation.
  • Sequential lateral solidification produces large grained structures through small-scale translation of a thin film between sequential pulses emitted by a pulsed laser.
  • lateral crystal growth or “lateral crystallization,” as those terms are used herein, it is meant a growth technique in which a region of a film is melted to the film/surface interface and in which recrystallization occurs in a crystallization front moving laterally across the substrate surface.
  • the thin film may be a metal or semiconductor film.
  • Exemplary metals include aluminum, copper, nickel, titanium, gold, and molybdenum.
  • Exemplary semiconductor films include conventional semiconductor materials, such as silicon, germanium, and silicon-germanium. Additional layers situated beneath or above the metal or semiconductor film are contemplated. The additional layers can be made of silicon oxide, silicon nitride and/or mixtures of oxide, nitride or other materials that are suitable, for example, for use as a thermal insulator to protect the substrate from overheating or as a diffusion barrier to prevent diffusion of impurities from the substrate to the film.
  • PCT Publication No. WO 2003/084688 describes methods and systems for providing an aluminum thin film with a controlled crystal orientation using pulsed laser induced melting and nucleation-initiated crystallization, the entire teachings of which are incorporated herein by reference.
  • a thin film is processed into a location-controlled elongated grain polycrystalline thin film using SLS.
  • An exemplary SLS process includes generating a plurality of excimer laser pulses of a predetermined fluence, controllably modulating the fluence of the excimer laser pulses, homogenizing the intensity profile of the laser pulse plane, masking each homogenized laser pulse to define patterned laser beams, irradiating the thin film with the laser beams to effect melting of portions thereof, and controllably and continuously translating the sample to move the patterned beam across the substrate surface.
  • the laser pulse frequency and the movement (speed and direction) of the sample may be adjusted so that the areas of sequential irradiation of the sample overlap from one irradiation/crystallization cycle to the next, so as to provide for the lateral crystal growth that gives rise to large grains.
  • Pulse frequency and stage and mask position may be coordinated and controlled by a computer.
  • Systems and methods for providing continuous motion sequential lateral solidification are provided in United States Patent No. 6,368,945, which is incorporated herein in its entirety by reference.
  • the exemplary SLS processes are described in U.S. Patent No. 6,555,449, and U.S. Patent Application No. 10/944,350 which uses a dot-patterned mask, the entire teachings of which are incorporated herein by reference.
  • FIG. 5A illustrates an exemplary dual-axis projection SLS system.
  • a light source for example, an excimer laser 52 generates a laser beam which then passes through a pulse duration extender 54 and attenuator plates 56 prior to passing through optical elements such as mirrors 58, 62, 70, a telescope 60, a homogenizer 64, a beam splitter 66 and a lens 72.
  • the laser beam pulses are then passed through a mask 74 and projection optics 82.
  • the projection optics reduce the size of the laser beam and simultaneously increase the intensity of the optical energy striking the substrate 88 at a desired location.
  • the substrate 88 is provided on a precision x-y-z stage that can accurately position the substrate 88 under the beam and assist in focusing or defocusing the image of the mask 74 produced by the laser beam at the desired location on the substrate.
  • HG. 5B illustrates a mask 90 incorporating a polka-dot pattern 92.
  • the polka-dot mask 90 is an inverted mask, where the polka-dots 92 correspond to masked regions and the remainder of the mask 94 is transparent.
  • the polka-dot pattern may be sequentially translated about the points on the sample where such crystals are desired. For example, as shown in FIG.
  • the polka-dot mask may be translated 96 a short distance in the positive Y direction after a first laser pulse, a short distance in the negative X direction 98 after a second laser pulse, and a short distance in the negative Y direction 99 after a third laser pulse to induce the formation of large crystals. If the separation distance between polka-dots is greater than two times the lateral growth distance, a crystalline structure where crystals separated by small grained polycrystalline silicon regions is generated. If the separation distance is less or equal to two times the lateral growth distance so as to avoid nucleation, a crystalline structure where crystals are generated. Further details about this SLS method are described in U.S. Patent No. 6,555,449, the entire teachings of which are incorporated herein by reference.
  • Embodiments of the present invention provide uniformly oriented material in epitaxy by performing SLS on a textured precursor.
  • a laterally grown grain adapts the orientation of the seed.
  • the polycrystalline film varies widely from grain to grain in the prior art.
  • seed crystals of similar crystallographic orientation texture
  • microstructure microstructure grains of similar crystallographic orientation.
  • the embodiments of this invention are directed at particular combinations of a texture-developing technology and the SLS process.
  • ZMR zone melt recrystallization
  • CVD chemical vapor deposition
  • SEDSGG surface-energy-driven secondary grain growth
  • SLS pulsed laser crystallization
  • As-deposited poly-silicon films sometimes show texture, depending on the details of the deposition process, such as pressure and temperature. Typically, texture in these films develops throughout the deposition process, that is initial growth at the SiO 2 interface is randomly oriented. As the lateral growth in SLS starts at the very edge of the unmolten portion, which is located at the SiO 2 interface, crystallographic orientation may still be random (which has been observed for ⁇ 110> oriented poly-Si films). It is, however, possible that methods are developed that yield texture throughout the thickness of the film or that a post- treatment is performed to establish the same goal through grain growth (i.e., preferred grains growing at the expense of others).
  • Seed Selection through Ion Channeling can be used to provide (110) texture in crystalline films.
  • Non-textured (or mildly (110)-textured) as- deposited poly-silicon (Si) films can be converted into strongly (110) textured films by silicon "self implantation" at a specific dose close to the complete amorphization threshold followed by solid-phase crystallization. Due to the effect of ion channeling along the ⁇ 110> directions in Si grains, only those grains that have this direction parallel to the direction of the implantation survive. When the implantation is perpendicular to the surface of the Si film, this means that ⁇ 110> surface oriented grains survive. During the subsequent recrystallization, a large-grain ⁇ 110> oriented poly-Si film is obtained.
  • SEDGG Surface-Energy-Driven Grain Growth
  • SEDSGG surface-energy-driven secondary grain growth
  • Primary, or normal, grain growth is observed upon heating (>1000°C) of a material and is driven by a reduction of the grain boundary area. In the case of thin films, this process is halted when the grain diameter reaches values comparable to the film thickness. Beyond that point, secondary, or abnormal, grain growth can occur. This process is driven by free energy anisotropics at the surface and the interface of the secondary grains.
  • MILC Metal-Induced Lateral Crystallization
  • metal the most popular being nickel (Ni)
  • Ni nickel
  • the Ni-Si contacting is done only locally (for example, by having a windowed buffer layer between the Si and metal films), a laterally crystallized poly-Si film is obtained with a lower Ni residue and with a high degree of (110) texture.
  • NiSi 2 precipitates are formed by Ni diffusion through the Si film.
  • NiSi 2 has a cubic lattice and the lattice mismatch with c-Si is only 0.4%. Due to this small mismatch, a few nm of c-Si will grow after which the Ni migrates/diffuses to its surface and the process is repeated. As the process continues, long needle-like crystals are formed and high degree of crystallization can be reached if some additional solid-phase crystallization is allowed to happen sideways from these needle-like crystals. Growth on the NiSi 2 precipitates occurs on a single ⁇ 111 ⁇ plane only and as such it is one dimensional.
  • Partial Melting ZMR can be used to provide crystalline films having (100) texture.
  • Zone-melting recrystallization (ZMR) of Si films results in the formation of large grained poly crystalline Si films having a preferential ⁇ 100> surface orientation of the crystals.
  • An embodiment of the present invention uses these orientated polycrystalline films as a precursor for crystallization using SLS.
  • the embodiment includes the use of oriented seed grains to promote the formation of large directionally grown oriented crystals.
  • ZMR of polycrystalline films is used to obtain (100) textured large-grain poly-Si films.
  • Growth of long (100) textured grains starts on grains formed in the "transition region" between the unmelted and the completely melted areas of the film.
  • This is the regime of partial melting (i.e., coexistence of solid and liquid), which only exists in radiatively heated Si films as a result of a significant increase in reflectivity of Si upon melting (a semiconductor- metal transition).
  • ⁇ 100> grains have been observed to dominate, a phenomenon that is linked to a crystallographic anisotropy in the SiO 2 -Si interfacial energy.
  • Zone melt irradiation using a continuous laser produces silicon films having ⁇ 100> orientation as described by M.W. Geis et. al., "Zone-Melting recrystallization of Si films with a moveable-strip-heater oven", J. Electro-Chem. Soc.
  • FIG. 9 A illustrates an image of a crystallized film of the (100) textured precursor after partial melting using rapid ZMR using a CW-laser as described herein before.
  • (100) textured are preferred for electronics as it leads to a maximum quality Si/SiO 2 interface in terms of the number of interface states.
  • Near-Complete-Melting ELA can be used to generate crystalline films having (111) texture.
  • Multiple-pulse excimer-laser crystallization in the partial melting regime is used to create uniform poly-Si films having grains that are predominantly ⁇ 111> surface-oriented.
  • Maximum grain size uniformity can be obtained due to interference effects at the roughened surface of the poly-Si film. This leads to poly-Si films with a grain size that is roughly equal to the wavelength, for example, using a XeCl laser -300 nm. At slightly higher energy densities, but still below the complete-melting threshold, grain diameter is no longer stabilized by the interference effects and much larger predominantly ⁇ 111> surface-oriented grains are obtained.
  • FIGS. 7A-7C illustrate a crystallized film processed with the multiple-pulse grain enlargement of (111) textured precursor with ELA.
  • SLS can be used to generate crystalline films having (110) texture.
  • the hybrid SLS process in certain embodiments can use an SLS process in the first step of generating a textured precursor.
  • the SLS process used in the first step is a texture inducing SLS process.
  • Analysis of directional poly-Si obtained through excimer-laser based SLS show that depending on the details of the process (film thickness, step size, pulse duration), either (100) or (110) texture is obtained in the direction of the scan.
  • film thickness, step size, pulse duration For the surface orientation of the grains, this results in a limitation to a certain range of orientations compatible with these in-plane orientations (for example, (111) surface texture is physically impossible when there is a (100) in- plane texture).
  • One method to obtain a particular (100) texture includes a particular SLS process to create a certain in-plane texture twice, perpendicular with respect to each other. The details of this process are described in U.S. Patent Application No.: 60/503,419, J.S. Im, entitled “Method and system for producing crystalline thin films with a uniform crystalline orientation,” the entire teachings of which are incorporated herein by reference. This can lead to formation of surface oriented material: if the orientation is controlled in both x and y directions, the orientation in the z direction per definition is controlled as well.
  • SLS can be used to generate crystalline films having (111) texture.
  • Analysis of SLS using a pulsed solid-state laser (frequency-doubled Nd:YVO 4 ), are described by M. Nerding et. al., in, "Tailoring texture in laser crystallization of silicon thin-films on glass,” Solid State Phenom. 93, 173 (2003), the entire contents of which are incorporated herein by reference.
  • the wavelength 532 nm
  • the spatial profile Gaussian
  • the pulse duration (20 ns) also play a role in the process.
  • III-V semiconductors such as
  • Gallium arsenide (GaAs), on a Silicon (Si) carrier enables products that combine the benefits of both materials: for example, light emitting diodes (LEDs) made in GaAs combined with electrical circuitry made in Si. If, in addition, the Si is a deposited film on top of a non-semiconducting substrate, such as glass, one is able to have these benefits on large-area and/or transparent substrates for a low price.
  • a non-semiconducting substrate such as glass
  • a higher energy-density ELA process as described herein before is used as a result of which a larger average grain size film is obtained.
  • These films can either have a strong (111) or (100) texture depending upon the conditions of the ELA process selected; a process that is likely to be related to anisotropies in melting and solidification of differently oriented grains. A very high degree of texture is obtained with commercially available line-beam ELA systems. These precursor textured films are not used in production of TFTs or for epitaxial processes due to the randomness of the microstructure.
  • FIGS. 6 A and 6B illustrate images of a crystallized film resulting from the hybrid SLS process for ⁇ 111> islands after creation of the textured precursor (FIG. 6A) using the aforementioned high-energy ELA process followed by the SLS process (FIG. 6B) respectively, in accordance with an embodiment of the invention.
  • Data for the FIGS. 6A and 6B was collected using electron back scatter diffraction (EBSD), a scanning electron-microscopy (SEM) based method for mapping of the crystallographic orientation.
  • FIG. 6A shows a map and its corresponding inverse pole figure (IPF) (FIG.
  • FIG. 6A-1 of a film after step one of the process, using multiple-pulse ELA at an energy density slightly higher than that commonly used in manufacturing of TFT (i.e., as shown in FIG. 6B).
  • the map 100 illustrates random high-angle grain boundaries, while the IPF shows the strong texture in these (111) grains.
  • FIG. 6B and its corresponding IPF illustrates the image of the film after performance of the SLS process having a dot-patterned mask (referred to herein also as dot-SLS) as described in U.S. Patent Application No. 10/944,350, the entire teachings of which are incorporated herein by reference.
  • the microstructure is well controlled (i.e., location- controlled single-crystal regions) and the texture is maintained.
  • the experimental conditions for the embodiment [(111) texture, SLS (150 nm Si)] include scanning a 500 x 500 ⁇ m 2 with a 4 ⁇ mbetween-pulse translation leading to 125 pulses per unit area, performed with the SLS system described with respect to FIG. 5A.
  • a commercially available ELA system can be used in an alternate embodiment and fewer pulses per unit area may be sufficient to reach the desired degree of texture.
  • For the second step of SLS processing a 4-shot dot - SLS system using ⁇ 1.8 ⁇ m large shadow regions placed in an 8 ⁇ m square grid is used. [0060] Combining the ELA pretreatment with the SLS process as described in
  • FIGS. 8 A and 8B illustrate an image of a crystallized film for mapping of the crystallographic orientation resulting from the hybrid SLS process for ⁇ 100> islands after creation of the textured precursor (FIG. 8A) using the aforementioned ELA process, and after the SLS process (FIG. 8B), respectively, in accordance with an embodiment of the invention.
  • Data for the images in FIGS. 8A and 8B are collected using the electron back scatter diffraction method for mapping of the crystallographic orientation.
  • FIG. 8A shows a map and its corresponding inverse pole figure (IPF) (FIG. 8A-1) of a film after step one of the process carried out using the multiple-pulse ELA at an energy density slightly higher than that commonly used in manufacturing of TFTs.
  • IPF inverse pole figure
  • FIG. 8B and its corresponding IPF shows the image after performance of the dot-SLS process.
  • the experimental conditions for this embodiment include the use of a frequency-doubled (532 nm) Nd: YV04 continuous wave laser shaped in a thin beam (100s ⁇ m long, ⁇ 10 or tens of ⁇ m wide) scanned at 1 cm/s.
  • FIG. 8B uses a 3.3 cm/s scan followed by 4-shot dot-SLS process using the system described in FIG. 5A.
  • FIGS. 10A- 1OC illustrate transmission electron microscopy (TEM) images of mostly ⁇ 110>, ⁇ 111> and ⁇ 100> oriented islands, respectively.
  • FIGS. 1 IA-11C illustrate the scanning electron microscopy images (SEM) and the electron back scatter diffraction (EBSD) data of the mostly ⁇ 110> oriented islands corresponding to the image illustrated in FIG. 1OA.
  • FIGS. 12A-12C illustrate the scanning electron microscopy images (SEM) and the electron back scatter diffraction (EBSD) data of the mostly ⁇ 111> oriented islands corresponding to the image illustrated in FIG. 1OB.
  • FIGS. 13A-13C illustrate the scanning electron microscopy images (SEM) and the electron back scatter diffraction (EBSD) data of the mostly ⁇ 100> oriented islands corresponding to the image illustrated in FIG. 1OC.
  • FIGS. lOA-lOC it is observed that the predominant planar defect is the Sigma3 boundary.
  • Sigma3 boundaries are one of a series of special high-angle grain boundaries described by the coincident-site lattice (CSL) as opposed to random high-angle grain boundaries which are shown in the EBSD results herein before with respect to FIGS. 6A, 6B, 8A and 8B.
  • CSL boundaries are twin boundaries, meaning they may have no electrical activity.
  • CSL boundaries tend to have a lower defect density and are thus less harmful for electrical properties. It has been observed that these boundaries are formed during crystallization rather than being present in the precursor.
  • FIG. 1OA illustrates that the surface orientation changes upon formation of Sigma3 planar defects and the island contains many defects.
  • the ⁇ 111> surface orientation has fewer defects, and no change in surface orientation (important for applications where the surface orientation is crucial, such as epitaxy and TFTs).
  • the ⁇ 100> surface orientation is predominantly free of planar defects.
  • the ⁇ 111> and ⁇ 100> islands can be obtained island having the ⁇ 100> orientation have the lowest density of defects, followed by ⁇ 111>.
  • These two observations indicate a preference for especially ⁇ 100> and to a lesser degree ⁇ 111> orientation.
  • These observations are valid when working at typical conditions (i.e., 50- 250nm Si films, 30-300ns pulse duration, room temperature, etc.).
  • Alternate embodiments that include working at different conditions, can suppress the formation of Sigma3 boundaries, meaning that defect free islands of any orientation can be obtained.
  • such a computer usable medium can include a readable memory device, such as, a hard drive device, a CD-ROM, a DVD-ROM, or a computer diskette, having computer readable program code segments stored thereon.
  • the computer readable medium can also include a communications or transmission medium, such as, a bus or a communications link, either optical, wired, or wireless having program code segments carried thereon as digital or analog data signals.

Abstract

In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes generating a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation.

Description

SYSTEMS AND METHODS FOR CREATING CRYSTALLOGRAPHIC- ORBENTATION CONTROLLED poly-SILICON FILMS
BACKGROUND
[0001] In recent years, various techniques for crystallizing or improving the crystallinity of an amorphous or polycrystalline semiconductor film have been investigated. This technology is used in the manufacture of a variety of devices, such as image sensors and displays, for example, active-matrix liquid-crystal display (AMLCD) devices. In the latter, a regular array of thin-film transistors (TFTs) are fabricated on an appropriate transparent substrate, and each transistor serves as a pixel controller.
[0002] Semiconductor films are processed using excimer laser annealing
(ELA), also known as line beam ELA, in which a region of the film is irradiated by an excimer laser to partially melt the film and then is crystallized. FIG. IA illustrate low- temperature poly-silicon (poly-si) (LTPS) microstructures that can be obtained by laser induced melting and solidification. The process typically uses a long, narrow beam shape that is continuously advanced over the substrate surface, so that the beam can potentially irradiate the entire semiconductor thin film in a single scan across the surface. ELA produces small-grained polycrystalline films; however, the method often suffers from microstructural non-uniformities which can be caused by pulse to pulse energy density fluctuations and/or non-uniform beam intensity profiles. FIG. 2 is an image of the random microstructure that results from ELA. The Si film is irradiated multiple times to create the random polycrystalline film with a uniform grain size.
[0003] Sequential lateral solidification (SLS) using an excimer laser is one method that has been used to form high quality polycrystalline films having large and uniform grains. SLS is a crystallization process that provides elongated grains of a crystallized material in predefined locations on a film. FIGS. IB-ID illustrate microstructures that can be obtained by SLS. A large-grained polycrystalline film can exhibit enhanced switching characteristics because the reduced number of grain boundaries in the direction of electron flow provides higher electron mobility. SLS processing controls the location of grain boundaries. U.S. Patent Nos. 6,322,625; 6,368,945; 6,555,449; and 6,573,531 issued to Dr. James Im, the entire disclosures of which are incorporated herein by reference, and which are assigned to the common assignee of the present application, describe such SLS systems and processes. [0004] FIGS. 3A-3F illustrate the SLS process schematically. In an SLS process, an initially amorphous or polycrystalline film (for example, a continuous wave (CW) - processed Si film, an as-deposited film, or solid phase crystallized film) is irradiated by a very narrow laser beamlet. The beamlet is formed, for example, by passing a laser beam pulse through a slotted mask, which is projected onto the surface of the silicon film. The beamlet melts the amorphous silicon and, upon cooling, the amorphous silicon film recrystallizes to form one or more crystals. The crystals grow primarily inward from edges of the irradiated area toward the center. After an initial beamlet has crystallized a portion of the film, a second beamlet irradiates the film at a location less than the "lateral growth length" from the previous beamlet. In the newly irradiated film location, crystal grains grow laterally from the crystal seeds of the polycrystalline material formed in the previous step. As a result of this lateral growth, the crystals are of high quality along the direction of the advancing beamlet. The elongated crystal grains are generally perpendicular to the length of the narrow beamlet and are separated by grain boundaries that run approximately parallel to the long grain axes.
[0005] When polycrystalline material is used to fabricate electronic devices, the total resistance to carrier transport is affected by the combination of barriers that a carrier has to cross as it travels under the influence of a given potential. Due to the additional number of grain boundaries that are crossed when the carrier travels in a direction perpendicular to the long grain axes of the polycrystalline material or when a carrier travels across a larger number of small grains, the carrier will experience higher resistance as compared to the carrier traveling parallel to long grain axes. Therefore, the performance of devices fabricated on polycrystalline films formed using SLS, such as TFTs, will depend upon the crystalline quality and microstructure of the TFT channel relative to the long grain axes, which corresponds to the main growth direction. [0006] To achieve acceptable system performance for devices that utilize a polycrystalline thin film there still remains a need to optimize manufacturing processes that provide a defined, crystallographic orientation of the crystal grains.
SUMMARY OF THE INVENTION [0007] In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes providing a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation. One preferred direction of crystallographic orientation is a direction normal to the surface of the film. [0008] The process of sequential lateral solidification (SLS) generally includes generating a plurality of laser beam pulses; directing the plurality of laser beam pulses through a mask to generate a plurality of patterned laser beams; irradiating a portion of a selected region of a film with one of the plurality of patterned beams, the beam having an intensity that is sufficient to melt throughout its entire thickness the irradiated portion of the film, wherein the irradiated portion of the film laterally crystallizes upon cooling. The process includes repositioning the film to irradiate a subsequent portion of the selected region with patterned beams, such that the subsequent position overlaps with the previously irradiated portion permitting the further lateral growth of the crystal grains. In one embodiment, successive portions of the selected region are irradiated such that the film is substantially completely crystallized in a single traversal of the patterned beams over the selected region of the film. By "completely crystallized" it is meant that the selected region of the film possesses the desired microstructure and crystal orientation, so that no further laser scanning of the region is required. The mask includes a dot-patterned mask and has opaque array patterns which include at least one of dot-shaped areas, hexagonal- shaped areas and rectangular shaped areas. [0009] According to one aspect of the invention, the textured film is generated by one of zone melt recrystallization, solid phase recrystallization, direct deposition methods, surface-energy driven secondary grain growth methods or by pulsed laser crystallization methods. The direct deposition methods comprise one of chemical vapor deposition, sputtering and evaporation. The pulsed laser crystallization methods include SLS or multiple-pulse ELA methods. The film can be a metal film or a semiconductor film.
[0010] According to another aspect of the present invention, a system for processing a film on a substrate includes at least one, laser for generating a plurality of laser beam pulses; a film support for positioning the film that is capable of movement in at least one direction; a mask support; optics for directing a first set of laser beam pulses through a first mask to generate a textured film; optics for directing a second set of laser beams onto the textured film; and a controller for controlling the movement of the film support and mask support in conjunction with frequency of laser beam pulses.
[0011] According to another aspect of the present invention, a device comprising a polycrystalline thin film having periodically located grains in which each of the grains are predominantly of one crystallographic orientation. The predominant crystallographic orientation is a <111> orientation or in another embodiment is a <100> orientation. The periodically located grains form columns of elongated grains.
[0012] The foregoing and other features and advantages of the invention will be apparent from the following more particular description of embodiments of the invention, as illustrated in the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] FIG. IA illustrates low temperature poly-silicon (LTPS) microstructures that are obtained for laser-induced melting and solidification.
[0014] FIGS. IB-ID illustrate microstructures that are obtained by sequential lateral solidification (SLS).
[0015] FIG. 2 is an image of the random orientation of the microstructure that results from excimer laser annealing (ELA).
[0016] FIGS. 3A-3F illustrate schematically the processes involved in sequential lateral solidification (SLS).
[0017] FIG. 4 is a flow diagram of the hybrid sequential lateral solidification (SLS) methods in accordance with an embodiment of the present invention.
[0018] FIG. 5A is a schematic diagram of a dual-axis projection irradiation system used for SLS in accordance with an embodiment of the present invention.
[0019] FIG. 5B is an illustrative diagram showing a mask having a polka-dot pattern.
[0020] FIG. 5C illustrates the mask translation using the mask of FIG. 5B.
[0021] FIGS. 6A and 6B illustrate images of a crystallized film using electron back scatter diffraction for mapping crystallographic orientation resulting from the hybrid SLS process for <111> islands after creation of the textured precursor and after the SLS process, respectively, and respective inverse pole figures, FIGS. 6A-1, and 6B-1, in accordance with an embodiment of the present invention.
[0022] FIGS. 7A-7C illustrate a crystallized film processed with the multiple- pulse grain enlargement of (111) textured precursor with ELA in accordance with an embodiment of the invention. [0023] FIGS. 8 A and 8B illustrate images of a crystallized film using electron back scatter diffraction for mapping crystallographic orientation resulting from the hybrid SLS process for <100> islands after the creation of the textured precursor and after the SLS process, respectively, and respective inverse pole figures, FIGS. 8A- 1, and 8B- 1 in accordance with an embodiment of the invention.
[0024] FIG. 9 illustrates an image of a crystallized film of the (100) textured precursor using rapid zone-melting recrystallization (ZMR) using a continuous-wave (CW) laser in accordance with an embodiment of the invention.
[0025] FIGS. lOA-lOC illustrate transmission electron microscopy (TEM) images of mostly < 110>, <111> and <100> oriented islands, respectively.
[0026] FIGS. 1 IA-11C illustrate the scanning electron microscopy images
(SEM) and the electron back scatter diffraction (EBSD) data of the mostly <110> oriented islands corresponding to the image illustrated in FIG. 1OA.
[0027] FIGS. 12A-12C illustrate the scanning electron microscopy images (SEM) and the electron back scatter diffraction (EBSD) data of the mostly <111> oriented islands corresponding to the image illustrated in FIG. 1OB.
[0028] FIGS. 13A-13C illustrate the scanning electron microscopy images
(SEM) and the electron back scatter diffraction (EBSD) data of the mostly <100> oriented islands corresponding to the image illustrated in FIG. 1OC.
DETAILED DESCRIPTION
[0029] The processes and systems described herein, defined as hybrid sequential lateral solidification (SLS), provide elongated grains or single-crystal islands of a specified crystallographic orientation. The embodiments of the invention are predicated on the recognition that the crystal orientation of lateral crystal growth during SLS depends on the orientation of the material at the boundary of the irradiated region. Lateral crystal growth of a material from a solidus boundary defined by a textured crystal promotes growth of that crystallographic orientation.
[0030] At its most basic, hybrid SLS is a two-step process as illustrated in FIG. 4. In the first step 42, a textured precursor is produced or provided. A textured film contains grains having predominantly the same crystallographic orientation in at least a single direction; however, they are randomly located on the surface and are of no particular size (microstructure). More specifically, if one crystallographic axis of most crystallites in a thin polycrystalline film points preferentially in a given direction, we refer to the microstructure as having a one-axial texture. For the embodiments described herein, the preferential direction of the one-axial texture is a direction normal to the surface of the crystallites. Thus, "texture" refers to a one-axial surface texture of the grains as used herein. The degree of texture can vary depending upon the particular application. For example, a higher degree of texture is preferable for a thin film transistor (TFT) being used for a driver circuit as opposed to a TFT that is used for a switch circuit.
[0031] In the second step 44 of the hybrid SLS process, SLS is performed. The lateral crystallization results in "location-controlled growth" of grain boundaries and elongated crystals of a desired crystallographic orientation. Location-controlled growth referred to herein is defined as the controlled location of grains and grain boundaries using particular beam patterns and masks such as, for example, dot- patterned masks.
[0032] As described briefly herein before, sequential lateral solidification ("SLS") is a crystallization process that provides elongated grains or single-crystal islands of a crystallized material in predefined locations on a film. However, SLS is not able to fully define the crystallographic orientation of those grains. In an SLS process growth begins with existing grains as it is epitaxial growth and, thus, the process cannot provide for growth in a preferred orientation. Epitaxial growth is referred to as the growth of the crystals of one material on the crystal face of another material, such that the crystalline grains of both materials have the same structural orientation. Sequential lateral solidification produces large grained structures through small-scale translation of a thin film between sequential pulses emitted by a pulsed laser. As the film absorbs the energy of each pulse, a small area of the film melts completely and recrystallizes laterally from the solidus/melt interface to form a crystalline region. By "lateral crystal growth" or "lateral crystallization," as those terms are used herein, it is meant a growth technique in which a region of a film is melted to the film/surface interface and in which recrystallization occurs in a crystallization front moving laterally across the substrate surface.
[0033] The thin film may be a metal or semiconductor film. Exemplary metals include aluminum, copper, nickel, titanium, gold, and molybdenum. Exemplary semiconductor films include conventional semiconductor materials, such as silicon, germanium, and silicon-germanium. Additional layers situated beneath or above the metal or semiconductor film are contemplated. The additional layers can be made of silicon oxide, silicon nitride and/or mixtures of oxide, nitride or other materials that are suitable, for example, for use as a thermal insulator to protect the substrate from overheating or as a diffusion barrier to prevent diffusion of impurities from the substrate to the film. PCT Publication No. WO 2003/084688 describes methods and systems for providing an aluminum thin film with a controlled crystal orientation using pulsed laser induced melting and nucleation-initiated crystallization, the entire teachings of which are incorporated herein by reference.
[0034] A thin film is processed into a location-controlled elongated grain polycrystalline thin film using SLS. An exemplary SLS process includes generating a plurality of excimer laser pulses of a predetermined fluence, controllably modulating the fluence of the excimer laser pulses, homogenizing the intensity profile of the laser pulse plane, masking each homogenized laser pulse to define patterned laser beams, irradiating the thin film with the laser beams to effect melting of portions thereof, and controllably and continuously translating the sample to move the patterned beam across the substrate surface. The laser pulse frequency and the movement (speed and direction) of the sample may be adjusted so that the areas of sequential irradiation of the sample overlap from one irradiation/crystallization cycle to the next, so as to provide for the lateral crystal growth that gives rise to large grains. Pulse frequency and stage and mask position may be coordinated and controlled by a computer. Systems and methods for providing continuous motion sequential lateral solidification are provided in United States Patent No. 6,368,945, which is incorporated herein in its entirety by reference. The exemplary SLS processes are described in U.S. Patent No. 6,555,449, and U.S. Patent Application No. 10/944,350 which uses a dot-patterned mask, the entire teachings of which are incorporated herein by reference.
[0035] FIG. 5A illustrates an exemplary dual-axis projection SLS system. A light source, for example, an excimer laser 52 generates a laser beam which then passes through a pulse duration extender 54 and attenuator plates 56 prior to passing through optical elements such as mirrors 58, 62, 70, a telescope 60, a homogenizer 64, a beam splitter 66 and a lens 72. The laser beam pulses are then passed through a mask 74 and projection optics 82. The projection optics reduce the size of the laser beam and simultaneously increase the intensity of the optical energy striking the substrate 88 at a desired location. The substrate 88 is provided on a precision x-y-z stage that can accurately position the substrate 88 under the beam and assist in focusing or defocusing the image of the mask 74 produced by the laser beam at the desired location on the substrate.
[0036] An alternate SLS method is used in different embodiments and is referred to herein as the dot-patterned SLS process. HG. 5B illustrates a mask 90 incorporating a polka-dot pattern 92. The polka-dot mask 90 is an inverted mask, where the polka-dots 92 correspond to masked regions and the remainder of the mask 94 is transparent. In order to fabricate large silicon crystals, the polka-dot pattern may be sequentially translated about the points on the sample where such crystals are desired. For example, as shown in FIG. 5C, the polka-dot mask may be translated 96 a short distance in the positive Y direction after a first laser pulse, a short distance in the negative X direction 98 after a second laser pulse, and a short distance in the negative Y direction 99 after a third laser pulse to induce the formation of large crystals. If the separation distance between polka-dots is greater than two times the lateral growth distance, a crystalline structure where crystals separated by small grained polycrystalline silicon regions is generated. If the separation distance is less or equal to two times the lateral growth distance so as to avoid nucleation, a crystalline structure where crystals are generated. Further details about this SLS method are described in U.S. Patent No. 6,555,449, the entire teachings of which are incorporated herein by reference.
[0037] Embodiments of the present invention provide uniformly oriented material in epitaxy by performing SLS on a textured precursor. A laterally grown grain adapts the orientation of the seed. The polycrystalline film varies widely from grain to grain in the prior art. By selecting seed crystals of similar crystallographic orientation (texture), it is possible to grow large location-controlled (microstructure) grains of similar crystallographic orientation. The embodiments of this invention are directed at particular combinations of a texture-developing technology and the SLS process.
[0038] Conventional methods of obtaining a precursor textured film are used in the first step, including zone melt recrystallization (ZMR), solid phase recrystallization, direct deposition techniques (chemical vapor deposition (CVD), sputtering, evaporation), surface-energy-driven secondary grain growth (SEDSGG) and pulsed laser crystallization (SLS, multiple-pulse ELA) methods. It is envisioned that other texture-inducing methods may also be used in a similar way to generate the textured precursors. Even though the methods of obtaining a precursor textured film are applicable to a large variety of metal and/or semiconductor films, the following methods are described with respect to a silicon film due to the importance of the silicon in semiconductor industry and the level of understanding of silicon in the industry due to all the studies performed to date using silicon.
[0039] The following methods are used in different embodiments to provide textured polycrystalline films that can then be used in a hybrid SLS process to create microstructure-controlled and crystallographic-orientation controlled poly-Si films. These methods describe the use of non-patterned planar samples. Methods using patterning, such as graphoepitaxy are often suggested as a means to also reach some control of the microstructure. SLS, however, is not always tolerant of non-planar or patterned films and, in addition, it is most likely superior in controlling the microstructure. [0040] As-Deposited CVD poly-Silicon films can be used to provide (110) or (100) texture in crystalline films. As-deposited poly-silicon films sometimes show texture, depending on the details of the deposition process, such as pressure and temperature. Typically, texture in these films develops throughout the deposition process, that is initial growth at the SiO2 interface is randomly oriented. As the lateral growth in SLS starts at the very edge of the unmolten portion, which is located at the SiO2 interface, crystallographic orientation may still be random (which has been observed for <110> oriented poly-Si films). It is, however, possible that methods are developed that yield texture throughout the thickness of the film or that a post- treatment is performed to establish the same goal through grain growth (i.e., preferred grains growing at the expense of others).
[0041] Seed Selection through Ion Channeling (SSIC) can be used to provide (110) texture in crystalline films. Non-textured (or mildly (110)-textured) as- deposited poly-silicon (Si) films can be converted into strongly (110) textured films by silicon "self implantation" at a specific dose close to the complete amorphization threshold followed by solid-phase crystallization. Due to the effect of ion channeling along the <110> directions in Si grains, only those grains that have this direction parallel to the direction of the implantation survive. When the implantation is perpendicular to the surface of the Si film, this means that <110> surface oriented grains survive. During the subsequent recrystallization, a large-grain <110> oriented poly-Si film is obtained.
[0042] Surface-Energy-Driven Grain Growth (SEDGG) can be used to generate (111) texture in crystalline film. SEDGG is a particular secondary grain growth mechanism and is commonly also called surface-energy-driven secondary grain growth (SEDSGG). Primary, or normal, grain growth is observed upon heating (>1000°C) of a material and is driven by a reduction of the grain boundary area. In the case of thin films, this process is halted when the grain diameter reaches values comparable to the film thickness. Beyond that point, secondary, or abnormal, grain growth can occur. This process is driven by free energy anisotropics at the surface and the interface of the secondary grains. Since the magnitude of the surface free energy is almost certainly larger than that of the Si-SiO2 interface free energy, it is expected that minimization thereof dominates the process. The energy of a free surface of Si is minimized with (111) texture and indeed it is observed that secondary grains are predominantly <111>.
[0043] Analysis on SEDGG predominantly discusses results obtained with Si films doped with phosphorous (P) or arsenic (As). These dopants are known to enhance the rate of secondary grain growth, through an increase of the grain boundary mobility. Intrinsic films still show secondary grain growth; order to get reasonable growth rates, the driving force and/or increase the grain boundary mobility is increased in alternative ways. Respective examples hereof are decreasing the film thickness or increasing the annealing temperature.
[0044] Metal-Induced Lateral Crystallization (MILC) can be used to provide crystalline films having (110) texture. In metal-induced crystallization, metal, the most popular being nickel (Ni), is brought in contact with the Si film and subsequent heating causes the film to crystallize rapidly. When the Ni-Si contacting is done only locally (for example, by having a windowed buffer layer between the Si and metal films), a laterally crystallized poly-Si film is obtained with a lower Ni residue and with a high degree of (110) texture.
[0045] In this process, NiSi2 precipitates are formed by Ni diffusion through the Si film. NiSi2 has a cubic lattice and the lattice mismatch with c-Si is only 0.4%. Due to this small mismatch, a few nm of c-Si will grow after which the Ni migrates/diffuses to its surface and the process is repeated. As the process continues, long needle-like crystals are formed and high degree of crystallization can be reached if some additional solid-phase crystallization is allowed to happen sideways from these needle-like crystals. Growth on the NiSi2 precipitates occurs on a single { 111 } plane only and as such it is one dimensional. Occasionally, however, a different { 111 } plane is chosen and the needle-like crystal makes a 109° or 71 ° turn. This process can be sustained when the needles remain in the plane of the film (i.e., they do not hit surface of interface) and this can be achieved when the surface orientation of the grains is <110>. [0046] Partial Melting ZMR can be used to provide crystalline films having (100) texture. Zone-melting recrystallization (ZMR) of Si films results in the formation of large grained poly crystalline Si films having a preferential <100> surface orientation of the crystals. An embodiment of the present invention uses these orientated polycrystalline films as a precursor for crystallization using SLS. The embodiment includes the use of oriented seed grains to promote the formation of large directionally grown oriented crystals. Thus, ZMR of polycrystalline films is used to obtain (100) textured large-grain poly-Si films. Growth of long (100) textured grains starts on grains formed in the "transition region" between the unmelted and the completely melted areas of the film. This is the regime of partial melting (i.e., coexistence of solid and liquid), which only exists in radiatively heated Si films as a result of a significant increase in reflectivity of Si upon melting (a semiconductor- metal transition). In this partial melting regime, <100> grains have been observed to dominate, a phenomenon that is linked to a crystallographic anisotropy in the SiO2-Si interfacial energy.
[0047] The above results have typically been obtained at scanning velocities of a few mm/s to less than 1 mm/s. For higher velocities (i.e., for "rapid-ZMR"), (100) textured growth is no longer stable and a random orientation is obtained. It is observed that the crystallographic orientation of laterally growing grains "rolls off into random orientations. The "transition region", however, exhibits a strong (100) texture, even though the degree decreases with increasing velocity. One way to maximize the degree of texture in partial melting rapid-ZMR is to create a precursor with a maximized number of seeds for <100> growth. One way to do so includes depositing a (lOO)-textured poly-Si films. It may also work to precrystallize the Si film into very small-grain material that, provided orientation is random, ensures a high density of texture (100) grains, for example, through complete-melting crystallization (CMC) to create nucleated grains.
[0048] Zone melt irradiation using a continuous laser produces silicon films having <100> orientation as described by M.W. Geis et. al., "Zone-Melting recrystallization of Si films with a moveable-strip-heater oven", J. Electro-Chem. Soc.
129, 2812 (1982), the entire teachings of which are incorporated hereby by reference.
FIG. 9 A illustrates an image of a crystallized film of the (100) textured precursor after partial melting using rapid ZMR using a CW-laser as described herein before. (100) textured are preferred for electronics as it leads to a maximum quality Si/SiO2 interface in terms of the number of interface states.
[0049] Near-Complete-Melting ELA can be used to generate crystalline films having (111) texture. Multiple-pulse excimer-laser crystallization in the partial melting regime is used to create uniform poly-Si films having grains that are predominantly <111> surface-oriented. Maximum grain size uniformity can be obtained due to interference effects at the roughened surface of the poly-Si film. This leads to poly-Si films with a grain size that is roughly equal to the wavelength, for example, using a XeCl laser -300 nm. At slightly higher energy densities, but still below the complete-melting threshold, grain diameter is no longer stabilized by the interference effects and much larger predominantly <111> surface-oriented grains are obtained.
[0050] Even though the energy density at which these processes are performed is in the partial melting regime, some complete melting must locally occur in order to allow for the cumulative growth of grains larger than the film thickness. It is suggested that preferential melting can occur at grain boundaries due to a locally enhanced absorption and/or reduced melting temperature. During melting and regrowth of the grain-boundary area, there apparently is a preference for <111> oriented grains either in their resistance to melting or their lateral growing velocity. As a result, <111> oriented grains grow at the expense of differently oriented grains.
[0051] With respect to Si precursor films, multiple-pulse irradiation from an excimer laser in the near-melting regime provides Si films having <111> orientation as described by H. J. Kim and James S. Im in Mat. Res. Soc. Sym. Proc, 321, 665- 670 (1994) the entire teachings of which are incorporated herein by reference. FIGS. 7A-7C illustrate a crystallized film processed with the multiple-pulse grain enlargement of (111) textured precursor with ELA.
[0052] SLS can be used to generate crystalline films having (110) texture. The hybrid SLS process in certain embodiments can use an SLS process in the first step of generating a textured precursor. The SLS process used in the first step is a texture inducing SLS process. Analysis of directional poly-Si obtained through excimer-laser based SLS (see FIG. 5A) show that depending on the details of the process (film thickness, step size, pulse duration), either (100) or (110) texture is obtained in the direction of the scan. For the surface orientation of the grains, this results in a limitation to a certain range of orientations compatible with these in-plane orientations (for example, (111) surface texture is physically impossible when there is a (100) in- plane texture). The in-plane texture gets developed rather rapidly, as observed from the mild texture for 2-shot SLS. Due to "roll-off of the orientation, however, it may not get much stronger when grains are extended, even for long-scan directional SLS. [0053] One method to obtain a particular (100) texture includes a particular SLS process to create a certain in-plane texture twice, perpendicular with respect to each other. The details of this process are described in U.S. Patent Application No.: 60/503,419, J.S. Im, entitled "Method and system for producing crystalline thin films with a uniform crystalline orientation," the entire teachings of which are incorporated herein by reference. This can lead to formation of surface oriented material: if the orientation is controlled in both x and y directions, the orientation in the z direction per definition is controlled as well.
[0054] SLS can be used to generate crystalline films having (111) texture. Analysis of SLS using a pulsed solid-state laser (frequency-doubled Nd:YVO4), are described by M. Nerding et. al., in, "Tailoring texture in laser crystallization of silicon thin-films on glass," Solid State Phenom. 93, 173 (2003), the entire contents of which are incorporated herein by reference. Although fundamentally the same process as with an excimer laser, there are some differences that can influence the orientation of the grains. The most prominent of these is the wavelength (532 nm), but it is possible that the spatial profile (Gaussian) and the pulse duration (20 ns) also play a role in the process. When SiNx buffer layers are used, however, a strong (111) surface orientation is obtained for a film thickness of at least approximately 150 nm.
[0055] In an embodiment, epitaxial growth of III-V semiconductors, such as
Gallium arsenide (GaAs), on a Silicon (Si) carrier enables products that combine the benefits of both materials: for example, light emitting diodes (LEDs) made in GaAs combined with electrical circuitry made in Si. If, in addition, the Si is a deposited film on top of a non-semiconducting substrate, such as glass, one is able to have these benefits on large-area and/or transparent substrates for a low price.
[0056] Proper epitaxy, however, requires both high-quality (i.e., defect free) as well as a uniformly oriented material. High quality can be achieved with the sequential lateral solidification (SLS) method, most importantly, with processes that can be used to create location-controlled single-crystal islands. In particular, the embodiments described herein of the hybrid SLS process are useful in the thin film transistor (TFT) industry as they leverage epitaxial growth, provide for TFT uniformity though anisotropy of performance level both through mobility and through interfacial defect density and TFT uniformity through quality of the material. Details of the effects of uniformity of TFTs, being field effect devices, are described by T. Sato, Y. Takeishi, H. Hara and Y. Okamoto, "Mobility anisotropy of electrons in inversion layers on oxidized silicon surfaces," in Physical Review B (Solid State) 4, 1950 (1971) and by M.H. White and J.R. Cricchi, "Characterization of thin-oxide MNOS memory transistors," in IEEE Trans. Electron Devices ED-19, 1280 (1972), the entire teachings of both are incorporated herein by reference.
[0057] In an embodiment, a higher energy-density ELA process as described herein before is used as a result of which a larger average grain size film is obtained. These films can either have a strong (111) or (100) texture depending upon the conditions of the ELA process selected; a process that is likely to be related to anisotropies in melting and solidification of differently oriented grains. A very high degree of texture is obtained with commercially available line-beam ELA systems. These precursor textured films are not used in production of TFTs or for epitaxial processes due to the randomness of the microstructure.
[0058] FIGS. 6 A and 6B illustrate images of a crystallized film resulting from the hybrid SLS process for <111> islands after creation of the textured precursor (FIG. 6A) using the aforementioned high-energy ELA process followed by the SLS process (FIG. 6B) respectively, in accordance with an embodiment of the invention. Data for the FIGS. 6A and 6B was collected using electron back scatter diffraction (EBSD), a scanning electron-microscopy (SEM) based method for mapping of the crystallographic orientation. FIG. 6A shows a map and its corresponding inverse pole figure (IPF) (FIG. 6A-1) of a film after step one of the process, using multiple-pulse ELA at an energy density slightly higher than that commonly used in manufacturing of TFT (i.e., as shown in FIG. 6B). The map 100 illustrates random high-angle grain boundaries, while the IPF shows the strong texture in these (111) grains. FIG. 6B and its corresponding IPF (FIG. 6B- 1) illustrates the image of the film after performance of the SLS process having a dot-patterned mask (referred to herein also as dot-SLS) as described in U.S. Patent Application No. 10/944,350, the entire teachings of which are incorporated herein by reference. The microstructure is well controlled (i.e., location- controlled single-crystal regions) and the texture is maintained.
[0059] The experimental conditions for the embodiment [(111) texture, SLS (150 nm Si)] include scanning a 500 x 500 μm2 with a 4μmbetween-pulse translation leading to 125 pulses per unit area, performed with the SLS system described with respect to FIG. 5A. A commercially available ELA system can be used in an alternate embodiment and fewer pulses per unit area may be sufficient to reach the desired degree of texture. For the second step of SLS processing, a 4-shot dot - SLS system using ~1.8μm large shadow regions placed in an 8μm square grid is used. [0060] Combining the ELA pretreatment with the SLS process as described in
U.S. Patent Application No. 10/944,350, the entire contents of which are incorporated herein by reference, leads to location-controlled single-crystal islands with a <111> orientation that may be useful for epitaxial growth of IH-V semiconductors or even for uniform TFT on low-cost large-area transparent substrates.
[0061] FIGS. 8 A and 8B illustrate an image of a crystallized film for mapping of the crystallographic orientation resulting from the hybrid SLS process for <100> islands after creation of the textured precursor (FIG. 8A) using the aforementioned ELA process, and after the SLS process (FIG. 8B), respectively, in accordance with an embodiment of the invention. Data for the images in FIGS. 8A and 8B are collected using the electron back scatter diffraction method for mapping of the crystallographic orientation. FIG. 8A shows a map and its corresponding inverse pole figure (IPF) (FIG. 8A-1) of a film after step one of the process carried out using the multiple-pulse ELA at an energy density slightly higher than that commonly used in manufacturing of TFTs. FIG. 8B and its corresponding IPF (FIG. 8B-1) shows the image after performance of the dot-SLS process. The experimental conditions for this embodiment include the use of a frequency-doubled (532 nm) Nd: YV04 continuous wave laser shaped in a thin beam (100s μm long, ~10 or tens of μm wide) scanned at 1 cm/s. FIG. 8B uses a 3.3 cm/s scan followed by 4-shot dot-SLS process using the system described in FIG. 5A.
[0062] FIGS. 10A- 1OC illustrate transmission electron microscopy (TEM) images of mostly <110>, <111> and <100> oriented islands, respectively. FIGS. 1 IA-11C illustrate the scanning electron microscopy images (SEM) and the electron back scatter diffraction (EBSD) data of the mostly <110> oriented islands corresponding to the image illustrated in FIG. 1OA. FIGS. 12A-12C illustrate the scanning electron microscopy images (SEM) and the electron back scatter diffraction (EBSD) data of the mostly <111> oriented islands corresponding to the image illustrated in FIG. 1OB. FIGS. 13A-13C illustrate the scanning electron microscopy images (SEM) and the electron back scatter diffraction (EBSD) data of the mostly <100> oriented islands corresponding to the image illustrated in FIG. 1OC.
[0063] In FIGS. lOA-lOC, it is observed that the predominant planar defect is the Sigma3 boundary. Sigma3 boundaries are one of a series of special high-angle grain boundaries described by the coincident-site lattice (CSL) as opposed to random high-angle grain boundaries which are shown in the EBSD results herein before with respect to FIGS. 6A, 6B, 8A and 8B. In its most particular form, these boundaries are twin boundaries, meaning they may have no electrical activity. In general, CSL boundaries tend to have a lower defect density and are thus less harmful for electrical properties. It has been observed that these boundaries are formed during crystallization rather than being present in the precursor. FIG. 1OA illustrates that the surface orientation changes upon formation of Sigma3 planar defects and the island contains many defects. In FIG. 1OB, the <111> surface orientation has fewer defects, and no change in surface orientation (important for applications where the surface orientation is crucial, such as epitaxy and TFTs). In FIG. 1OC, the <100> surface orientation is predominantly free of planar defects.
[0064] In particular embodiments using the dot-SLS (process dot-patterned mask) the <111> and <100> islands can be obtained island having the <100> orientation have the lowest density of defects, followed by <111>. These two observations indicate a preference for especially <100> and to a lesser degree <111> orientation. These observations are valid when working at typical conditions (i.e., 50- 250nm Si films, 30-300ns pulse duration, room temperature, etc.). Alternate embodiments that include working at different conditions, can suppress the formation of Sigma3 boundaries, meaning that defect free islands of any orientation can be obtained.
[0065] In view of the wide variety of embodiments to which the principles of the present invention can be applied, it should be understood that the illustrated embodiments are exemplary only, and should not be taken as limiting the scope of the present invention. For example, the steps of the diagrams may be taken in sequences other than those described, and more or fewer elements may be used in the diagrams. While various elements of the embodiments have been described as being implemented in software, other embodiments in hardware or firmware implementations may alternatively be used, and vice- versa. [0066] It will be apparent to those of ordinary skill in the art that methods involved in creating crystallographic orientation controlled poly-silicon films may be embodied in a computer program product that includes a computer usable medium. For example, such a computer usable medium can include a readable memory device, such as, a hard drive device, a CD-ROM, a DVD-ROM, or a computer diskette, having computer readable program code segments stored thereon. The computer readable medium can also include a communications or transmission medium, such as, a bus or a communications link, either optical, wired, or wireless having program code segments carried thereon as digital or analog data signals.
[0067] Other aspects, modifications, and embodiments are within the scope of the following claims.

Claims

CLAIMSWhat is claimed is:
1. A method of processing a film on a substrate, the method comprising: providing a textured film comprising crystal grains having a crystallographic orientation predominantly in one direction; and generating a microstructure using sequential lateral solidification crystallization for providing a location-controlled growth of said crystal grains orientated in said crystallographic orientation.
2. The method of claim 1, wherein sequential lateral solidification crystallization comprises: generating a plurality of laser beam pulses; directing the plurality of laser beam pulses through a mask to generate a plurality of patterned laser beams; irradiating a portion of a film with one of the plurality of patterned beams, said beam having an intensity that is sufficient to melt through the entire thickness of the irradiated portion of the film, wherein the irradiated portion of the film laterally crystallizes upon cooling; and repositioning the film to irradiate a subsequent portion with patterned beams, such that the subsequent portion of the film overlaps with the previously irradiated portion permitting further lateral growth of the crystal grains.
3. The method of claim 1, wherein sequential lateral solidification crystallization comprises: generating a plurality of laser beam pulses; directing the plurality of laser beam pulses through a mask to generate a plurality of patterned laser beams;
irradiating a portion of a selected region of a film with one of the plurality of patterned beams, said beam having an intensity that is sufficient to melt the irradiated portion of the film, wherein the irradiated portion of the film crystallizes upon cooling, moving the film along a first translation pathway and moving the mask along a second translation pathway while successive portions of the selected region are irradiated with patterned beams, such that the selected region of the film is substantially completely crystallized in a single traversal of the patterned beams over the selected region of the film.
4. The method of claim 2, wherein the mask comprises a dot-patterned mask.
5. The method according to claim 4, wherein the mask includes opaque array patterns which include at least one of dot-shaped areas, hexagonal-shaped areas and rectangular- shaped areas.
6. The method of claim 1, wherein the textured film is generated by one of zone melt recrystallization, solid phase recrystallization, direct deposition methods, surface-energy driven secondary grain growth methods and pulsed laser crystallization methods.
7. The method of claim 6, wherein the direct deposition methods comprise one of chemical vapor deposition, sputtering and evaporation.
8. The method of claim 6, wherein the pulsed laser crystallization methods comprise one of sequential lateral solidification and multiple-pulse ELA processes.
9. . The method of claim 1, wherein the film is a semiconductor film.
10. The method of claim 1, wherein the film is a metallic film.
11. The method of claim 1, wherein the one direction is preferably a direction normal to the surface of the film.
12. The method according to claim 1, wherein the predominant crystallographic orientation is a <111> orientation.
13. The method according to claim 1, wherein the predominant crystallographic orientation is a <100> orientation.
14. A system for processing a film on a substrate, comprising: at least one laser for generating a plurality of laser beam pulses; a film support for positioning the film that is capable of movement in at least one direction; a mask support; optics for directing a first set of laser beam pulses through a first mask to generate a textured film; optics for directing a second set of laser beam pulses through a second mask onto the textured film; and a controller for controlling the movement of the film support and mask support in conjunction with frequency of the first set of and second set of laser beam pulses.
15. The system of claim 14, wherein the textured film is generated by one of zone melt recrystallization, solid phase recrystallization, direct deposition methods, surface-energy driven secondary grain growth methods and pulsed laser crystallization methods.
16. The system of claim 14, wherein the direct deposition methods comprise one of chemical vapor deposition, sputtering, and evaporation.
17. The system of claim 14, wherein the pulsed laser crystallization methods comprise one of sequential lateral solidification and multiple-pulse ELA processes.
18. The system of claim 14, wherein the film is a semiconductor film.
19. The system of claim 14, wherein the film is a metallic film.
20. A device comprising a polycrystalline thin film, comprising: a polycrystalline thin film having periodically located grains in which each of the grains are predominantly of one crystallographic orientation.
21. The device of claim 20, wherein the film is a semiconductor film.
22. The device of claim 20, wherein the film is a metallic film.
23. The device of claim 20, wherein the predominant crystallographic orientation is a <111> orientation.
24. The device of claim 20, wherein the predominant crystallographic orientation is a <100> orientation.
25. The device of claim 20, wherein the microstructure of the periodically located grains is a hexagonal pattern, a round pattern, a rectangular pattern, or a square pattern.
26. The device of claim 20, wherein the periodically located grains form columns of elongated grains.
PCT/US2004/039055 2004-11-18 2004-11-18 Systems and methods for creating crystallographic-orientation controlled poly-silicon films WO2006055003A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007543001A JP5068171B2 (en) 2004-11-18 2004-11-18 System and method for producing a crystallographically controlled polysilicon film
PCT/US2004/039055 WO2006055003A1 (en) 2004-11-18 2004-11-18 Systems and methods for creating crystallographic-orientation controlled poly-silicon films
EP04811722A EP1812958A1 (en) 2004-11-18 2004-11-18 Systems and methods for creating crystallographic-orientation controlled poly-silicon films
KR1020077013682A KR101212378B1 (en) 2004-11-18 2004-11-18 SYSTEMS AND METHODS FOR CREATING CRYSTALLOGRAPHIC-ORIENTATION CONTROLLED poly-SILICON FILMS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2004/039055 WO2006055003A1 (en) 2004-11-18 2004-11-18 Systems and methods for creating crystallographic-orientation controlled poly-silicon films

Publications (1)

Publication Number Publication Date
WO2006055003A1 true WO2006055003A1 (en) 2006-05-26

Family

ID=34959694

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/039055 WO2006055003A1 (en) 2004-11-18 2004-11-18 Systems and methods for creating crystallographic-orientation controlled poly-silicon films

Country Status (4)

Country Link
EP (1) EP1812958A1 (en)
JP (1) JP5068171B2 (en)
KR (1) KR101212378B1 (en)
WO (1) WO2006055003A1 (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206322A (en) * 2008-02-28 2009-09-10 Renesas Technology Corp Semiconductor device, method of manufacturing semiconductor device, semiconductor manufacturing/inspecting device and inspecting device
JP2011515833A (en) * 2008-02-29 2011-05-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク Flash optical annealing for thin films
JP2011515834A (en) * 2008-02-29 2011-05-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク Lithographic method for producing uniform crystalline silicon thin films
CN102181940A (en) * 2011-04-08 2011-09-14 光为绿色新能源有限公司 Preparation method of multicrystalline silicon texture
US8415670B2 (en) 2007-09-25 2013-04-09 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
US8426296B2 (en) 2007-11-21 2013-04-23 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US8445365B2 (en) 2003-09-19 2013-05-21 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
US8507368B2 (en) 2002-08-19 2013-08-13 The Trustees Of Columbia University In The City Of New York Single-shot semiconductor processing system and method having various irradiation patterns
US8557040B2 (en) 2007-11-21 2013-10-15 The Trustees Of Columbia University In The City Of New York Systems and methods for preparation of epitaxially textured thick films
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
US8598588B2 (en) 2005-12-05 2013-12-03 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
US8617313B2 (en) 2005-04-06 2013-12-31 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US8715412B2 (en) 2003-09-16 2014-05-06 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US8734584B2 (en) 2004-11-18 2014-05-27 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8748326B2 (en) 2009-11-05 2014-06-10 V Technology Co., Ltd. Device and method for forming low-temperature polysilicon film
US8802580B2 (en) 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US8859436B2 (en) 1996-05-28 2014-10-14 The Trustees Of Columbia University In The City Of New York Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9466402B2 (en) 2003-09-16 2016-10-11 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI528418B (en) * 2009-11-30 2016-04-01 應用材料股份有限公司 Crystallization processing for semiconductor applications
KR20210070417A (en) 2019-12-04 2021-06-15 삼성디스플레이 주식회사 Display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19839718A1 (en) * 1998-09-01 2000-03-02 Strunk Horst P Laser crystallization or crystal structure alteration of amorphous or polycrystalline semiconductor layers comprises paired laser pulse irradiation for extended melt time while maintaining a low substrate temperature
US6300175B1 (en) * 1998-06-09 2001-10-09 Lg. Philips Lcd., Co., Ltd. Method for fabricating thin film transistor
US20020083557A1 (en) * 2000-12-28 2002-07-04 Yun-Ho Jung Apparatus and method of crystallizing amorphous silicon
DE10103670A1 (en) * 2001-01-27 2002-08-01 Christiansen Jens I Textured crystalline silicon layer production using laser, includes control of energy intensity to achieve textured crystallites of specific diameter

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273030A (en) * 1994-03-28 1995-10-20 Tokyo Electron Ltd Method for polycrystallizing amorphous film of substrate and manufacture of liquid crystal display substrate
US6573163B2 (en) * 2001-01-29 2003-06-03 Sharp Laboratories Of America, Inc. Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films
US6635555B2 (en) * 2001-02-28 2003-10-21 Sharp Laboratories Of America, Inc. Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films
JP2003124230A (en) * 2001-10-12 2003-04-25 Hitachi Ltd Thin film transistor device, method for manufacturing the device, and image display apparatus using the device
JP2002203809A (en) * 2001-10-25 2002-07-19 Hitachi Ltd Semiconductor device and its manufacturing method
US6962860B2 (en) * 2001-11-09 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
KR100618184B1 (en) * 2003-03-31 2006-08-31 비오이 하이디스 테크놀로지 주식회사 Method of crystallization

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6300175B1 (en) * 1998-06-09 2001-10-09 Lg. Philips Lcd., Co., Ltd. Method for fabricating thin film transistor
DE19839718A1 (en) * 1998-09-01 2000-03-02 Strunk Horst P Laser crystallization or crystal structure alteration of amorphous or polycrystalline semiconductor layers comprises paired laser pulse irradiation for extended melt time while maintaining a low substrate temperature
US20020083557A1 (en) * 2000-12-28 2002-07-04 Yun-Ho Jung Apparatus and method of crystallizing amorphous silicon
DE10103670A1 (en) * 2001-01-27 2002-08-01 Christiansen Jens I Textured crystalline silicon layer production using laser, includes control of energy intensity to achieve textured crystallites of specific diameter

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CROWDER M A ET AL: "Parametric investigation of SLS-processed poly-silicon thin films for TFT applications", PREPARATION AND CHARACTERIZATION, ELSEVIER SEQUOIA, NL, vol. 427, no. 1-2, 3 March 2003 (2003-03-03), pages 101 - 107, XP004417451, ISSN: 0040-6090 *

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8859436B2 (en) 1996-05-28 2014-10-14 The Trustees Of Columbia University In The City Of New York Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
US8883656B2 (en) 2002-08-19 2014-11-11 The Trustees Of Columbia University In The City Of New York Single-shot semiconductor processing system and method having various irradiation patterns
US8507368B2 (en) 2002-08-19 2013-08-13 The Trustees Of Columbia University In The City Of New York Single-shot semiconductor processing system and method having various irradiation patterns
US9466402B2 (en) 2003-09-16 2016-10-11 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US8715412B2 (en) 2003-09-16 2014-05-06 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US8445365B2 (en) 2003-09-19 2013-05-21 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
US8734584B2 (en) 2004-11-18 2014-05-27 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8617313B2 (en) 2005-04-06 2013-12-31 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US8598588B2 (en) 2005-12-05 2013-12-03 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
US9012309B2 (en) 2007-09-21 2015-04-21 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
US8415670B2 (en) 2007-09-25 2013-04-09 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
US8426296B2 (en) 2007-11-21 2013-04-23 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8557040B2 (en) 2007-11-21 2013-10-15 The Trustees Of Columbia University In The City Of New York Systems and methods for preparation of epitaxially textured thick films
US8871022B2 (en) 2007-11-21 2014-10-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparation of epitaxially textured thick films
JP2009206322A (en) * 2008-02-28 2009-09-10 Renesas Technology Corp Semiconductor device, method of manufacturing semiconductor device, semiconductor manufacturing/inspecting device and inspecting device
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
JP2011515834A (en) * 2008-02-29 2011-05-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク Lithographic method for producing uniform crystalline silicon thin films
JP2011515833A (en) * 2008-02-29 2011-05-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク Flash optical annealing for thin films
US8802580B2 (en) 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8748326B2 (en) 2009-11-05 2014-06-10 V Technology Co., Ltd. Device and method for forming low-temperature polysilicon film
US8889569B2 (en) 2009-11-24 2014-11-18 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral soldification
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
CN102181940A (en) * 2011-04-08 2011-09-14 光为绿色新能源有限公司 Preparation method of multicrystalline silicon texture

Also Published As

Publication number Publication date
KR101212378B1 (en) 2012-12-13
JP2008521247A (en) 2008-06-19
KR20070097442A (en) 2007-10-04
JP5068171B2 (en) 2012-11-07
EP1812958A1 (en) 2007-08-01

Similar Documents

Publication Publication Date Title
US8734584B2 (en) Systems and methods for creating crystallographic-orientation controlled poly-silicon films
KR101212378B1 (en) SYSTEMS AND METHODS FOR CREATING CRYSTALLOGRAPHIC-ORIENTATION CONTROLLED poly-SILICON FILMS
US8598588B2 (en) Systems and methods for processing a film, and thin films
US8715412B2 (en) Laser-irradiated thin films having variable thickness
US7135388B2 (en) Method for fabricating single crystal silicon film
US8012861B2 (en) Systems and methods for preparing epitaxially textured polycrystalline films
US6495405B2 (en) Method of optimizing channel characteristics using laterally-crystallized ELA poly-Si films
WO2005029138A2 (en) Systems and methods for inducing crystallization of thin films using multiple optical paths
EP1912252A1 (en) Polysilicon thin film transistor and method of fabricating the same
US9087696B2 (en) Systems and methods for non-periodic pulse partial melt film processing
CN101111925A (en) System and method for generating polysilicon film controlled on crystallization direction
JP2007281421A (en) Method of crystallizing semiconductor thin film
US20050142897A1 (en) Method for forming polycrystalline silicon film
JP2007281420A (en) Method for crystallizing semiconductor thin film
JP4769491B2 (en) Crystallization method, thin film transistor manufacturing method, thin film transistor, and display device
Van Der Wilt et al. A hybrid approach for obtaining orientation-controlled single-crystal Si regions on glass substrates
KR100713895B1 (en) Method for forming polycrystalline film
JP4365757B2 (en) Method for forming polycrystalline silicon film of polycrystalline silicon thin film transistor
Morikawa et al. 33.3: Comparison of Poly‐Si TFT Characteristics Crystallized by a YAG2ω Laser and an Excimer Laser
JP2000114175A (en) Semiconductor film crystallization method and manufacture
JP2005101311A (en) Semiconductor device and its manufacturing method
KR20100084813A (en) Method for forming polycrystalline film

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2007543001

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

REEP Request for entry into the european phase

Ref document number: 2004811722

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2004811722

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020077013682

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 200480044730.6

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2004811722

Country of ref document: EP