WO2006049912A3 - Cmp composition comprising surfactant - Google Patents
Cmp composition comprising surfactant Download PDFInfo
- Publication number
- WO2006049912A3 WO2006049912A3 PCT/US2005/038028 US2005038028W WO2006049912A3 WO 2006049912 A3 WO2006049912 A3 WO 2006049912A3 US 2005038028 W US2005038028 W US 2005038028W WO 2006049912 A3 WO2006049912 A3 WO 2006049912A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- surfactant
- cmp composition
- polishing
- polishing composition
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007539010A JP4965451B2 (en) | 2004-10-28 | 2005-10-21 | CMP composition comprising a surfactant |
KR1020077011829A KR101109300B1 (en) | 2004-10-28 | 2005-10-21 | Cmp composition comprising surfactant |
EP05817425A EP1829093B1 (en) | 2004-10-28 | 2005-10-21 | Cmp composition comprising surfactant |
DE602005012546T DE602005012546D1 (en) | 2004-10-28 | 2005-10-21 | CMP COMPOSITION WITH A TENSID |
IL182536A IL182536A (en) | 2004-10-28 | 2007-04-12 | Cmp composition comprising surfactant |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/975,585 US7524347B2 (en) | 2004-10-28 | 2004-10-28 | CMP composition comprising surfactant |
US10/975,585 | 2004-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006049912A2 WO2006049912A2 (en) | 2006-05-11 |
WO2006049912A3 true WO2006049912A3 (en) | 2006-10-26 |
Family
ID=35840204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/038028 WO2006049912A2 (en) | 2004-10-28 | 2005-10-21 | Cmp composition comprising surfactant |
Country Status (11)
Country | Link |
---|---|
US (1) | US7524347B2 (en) |
EP (1) | EP1829093B1 (en) |
JP (1) | JP4965451B2 (en) |
KR (1) | KR101109300B1 (en) |
CN (2) | CN101044600A (en) |
AT (1) | ATE421769T1 (en) |
DE (1) | DE602005012546D1 (en) |
IL (1) | IL182536A (en) |
MY (1) | MY143941A (en) |
TW (1) | TWI313703B (en) |
WO (1) | WO2006049912A2 (en) |
Cited By (1)
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---|---|---|---|---|
CN103045099A (en) * | 2007-09-14 | 2013-04-17 | 安集微电子(上海)有限公司 | Chemical mechanical polishing solution for polishing polycrystalline silicon |
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JP2005244123A (en) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | Polishing composition |
US7504044B2 (en) | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
KR100684877B1 (en) * | 2005-01-05 | 2007-02-20 | 삼성전자주식회사 | Slurry compositions and favrication method of semiconductor device including chemical mechanical polishing process using the same |
US20080096385A1 (en) * | 2006-09-27 | 2008-04-24 | Hynix Semiconductor Inc. | Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same |
US20080148652A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Compositions for chemical mechanical planarization of copper |
US8901053B2 (en) * | 2007-09-14 | 2014-12-02 | Kao Corporation | Aqueous cleaning composition for substrate for perpendicular magnetic recording hard disk |
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US7905994B2 (en) * | 2007-10-03 | 2011-03-15 | Moses Lake Industries, Inc. | Substrate holder and electroplating system |
JP4981750B2 (en) * | 2007-10-29 | 2012-07-25 | 花王株式会社 | Polishing liquid composition for hard disk substrate |
CN101177591B (en) * | 2007-12-07 | 2010-06-02 | 天长市华润清洗科技有限公司 | Metal polish and method for preparing the same |
JP2009164188A (en) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | Polishing composition |
US7922926B2 (en) * | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
US20090188553A1 (en) * | 2008-01-25 | 2009-07-30 | Emat Technology, Llc | Methods of fabricating solar-cell structures and resulting solar-cell structures |
US8247326B2 (en) * | 2008-07-10 | 2012-08-21 | Cabot Microelectronics Corporation | Method of polishing nickel-phosphorous |
TWI537367B (en) * | 2008-07-11 | 2016-06-11 | Nitta Haas Inc | Grinding composition |
CN101638557A (en) * | 2008-08-01 | 2010-02-03 | 安集微电子(上海)有限公司 | Chemi-mechanical polishing liquid |
CN101665661A (en) * | 2008-09-05 | 2010-03-10 | 安集微电子科技(上海)有限公司 | Application of amine compounds and chemical mechanical polishing solution |
JP5576634B2 (en) * | 2008-11-05 | 2014-08-20 | 山口精研工業株式会社 | Abrasive composition and method for polishing magnetic disk substrate |
KR101178717B1 (en) | 2008-12-22 | 2012-08-31 | 제일모직주식회사 | CMP slurry composition for polishing Poly silicon layer and polishing method using the same |
US8226841B2 (en) * | 2009-02-03 | 2012-07-24 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous memory disks |
US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
US9330703B2 (en) * | 2009-06-04 | 2016-05-03 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous memory disks |
US8883034B2 (en) * | 2009-09-16 | 2014-11-11 | Brian Reiss | Composition and method for polishing bulk silicon |
JP5536433B2 (en) * | 2009-12-11 | 2014-07-02 | 花王株式会社 | Polishing liquid composition for hard disk substrate |
US8404369B2 (en) * | 2010-08-03 | 2013-03-26 | WD Media, LLC | Electroless coated disks for high temperature applications and methods of making the same |
KR20120020556A (en) * | 2010-08-30 | 2012-03-08 | 삼성전자주식회사 | A slurry composite of chemical mechanical polishing process and a method of forming phase change memory device using the same |
KR20120136881A (en) * | 2011-06-10 | 2012-12-20 | 동우 화인켐 주식회사 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
JP2013030235A (en) * | 2011-07-27 | 2013-02-07 | Alphana Technology Co Ltd | Rotating apparatus and method for manufacturing rotating apparatus |
US9039914B2 (en) * | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
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JP2018506176A (en) * | 2014-12-16 | 2018-03-01 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | Chemical mechanical polishing (CMP) composition for high-efficiency polishing of substrates containing germanium |
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US10479911B1 (en) | 2018-06-05 | 2019-11-19 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced edge roll off |
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-
2004
- 2004-10-28 US US10/975,585 patent/US7524347B2/en active Active
-
2005
- 2005-10-21 CN CNA2005800360044A patent/CN101044600A/en active Pending
- 2005-10-21 CN CN201110150388.XA patent/CN102337080B/en not_active Expired - Fee Related
- 2005-10-21 JP JP2007539010A patent/JP4965451B2/en active Active
- 2005-10-21 WO PCT/US2005/038028 patent/WO2006049912A2/en active Application Filing
- 2005-10-21 AT AT05817425T patent/ATE421769T1/en not_active IP Right Cessation
- 2005-10-21 DE DE602005012546T patent/DE602005012546D1/en active Active
- 2005-10-21 EP EP05817425A patent/EP1829093B1/en not_active Not-in-force
- 2005-10-21 KR KR1020077011829A patent/KR101109300B1/en not_active IP Right Cessation
- 2005-10-26 MY MYPI20055046A patent/MY143941A/en unknown
- 2005-10-26 TW TW094137531A patent/TWI313703B/en active
-
2007
- 2007-04-12 IL IL182536A patent/IL182536A/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999047618A1 (en) * | 1998-03-18 | 1999-09-23 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
WO2001032793A2 (en) * | 1999-11-04 | 2001-05-10 | Cabot Microelectronics Corporation | Use of cesium hydroxide in a dielectric cmp slurry |
WO2004033574A1 (en) * | 2002-10-11 | 2004-04-22 | Cabot Microelectronics Corporation | Cmp method utilizing amphiphilic non-ionic surfactants |
WO2004076574A2 (en) * | 2003-02-27 | 2004-09-10 | Cabot Microelectronics Corporation | Cmp composition comprising a sulfonic acid and a method for polishing noble metals |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103045099A (en) * | 2007-09-14 | 2013-04-17 | 安集微电子(上海)有限公司 | Chemical mechanical polishing solution for polishing polycrystalline silicon |
Also Published As
Publication number | Publication date |
---|---|
CN102337080A (en) | 2012-02-01 |
EP1829093A2 (en) | 2007-09-05 |
CN101044600A (en) | 2007-09-26 |
EP1829093B1 (en) | 2009-01-21 |
MY143941A (en) | 2011-07-29 |
WO2006049912A2 (en) | 2006-05-11 |
JP2008517791A (en) | 2008-05-29 |
CN102337080B (en) | 2016-01-20 |
TW200621961A (en) | 2006-07-01 |
IL182536A0 (en) | 2007-09-20 |
IL182536A (en) | 2014-06-30 |
ATE421769T1 (en) | 2009-02-15 |
US7524347B2 (en) | 2009-04-28 |
JP4965451B2 (en) | 2012-07-04 |
DE602005012546D1 (en) | 2009-03-12 |
KR101109300B1 (en) | 2012-01-31 |
KR20070072617A (en) | 2007-07-04 |
TWI313703B (en) | 2009-08-21 |
US20060096496A1 (en) | 2006-05-11 |
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