WO2006044417A3 - Cmp composition with a polymer additive for polishing noble metals - Google Patents

Cmp composition with a polymer additive for polishing noble metals Download PDF

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Publication number
WO2006044417A3
WO2006044417A3 PCT/US2005/036577 US2005036577W WO2006044417A3 WO 2006044417 A3 WO2006044417 A3 WO 2006044417A3 US 2005036577 W US2005036577 W US 2005036577W WO 2006044417 A3 WO2006044417 A3 WO 2006044417A3
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
substrate
noble metals
polymer additive
cmp composition
Prior art date
Application number
PCT/US2005/036577
Other languages
French (fr)
Other versions
WO2006044417B1 (en
WO2006044417A2 (en
Inventor
Rege Thesauro Francesco De
Benjamin Bayer
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Priority to JP2007536823A priority Critical patent/JP5583888B2/en
Priority to KR1020077010501A priority patent/KR101128551B1/en
Priority to CN2005800348540A priority patent/CN101040021B/en
Priority to EP05810260A priority patent/EP1799785A2/en
Publication of WO2006044417A2 publication Critical patent/WO2006044417A2/en
Publication of WO2006044417A3 publication Critical patent/WO2006044417A3/en
Publication of WO2006044417B1 publication Critical patent/WO2006044417B1/en
Priority to IL182170A priority patent/IL182170A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)

Abstract

The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system comprising (a) a polishing component selected from the group consisting of an abrasive, a polishing pad, and a combination thereof, (b) an oxidizing agent, (c) an ethylene-oxide containing polymer, and (d) a liquid carrier, and abrading at least a portion of the noble metal with the chemical-mechanical polishing system to polish the substrate.
PCT/US2005/036577 2004-10-12 2005-10-11 Cmp composition with a polymer additive for polishing noble metals WO2006044417A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007536823A JP5583888B2 (en) 2004-10-12 2005-10-11 CMP composition with polymer additive for precious metal polishing
KR1020077010501A KR101128551B1 (en) 2004-10-12 2005-10-11 Cmp composition with a polymer additive for polishing noble metals
CN2005800348540A CN101040021B (en) 2004-10-12 2005-10-11 Cmp composition with a polymer additive for polishing noble metals
EP05810260A EP1799785A2 (en) 2004-10-12 2005-10-11 Cmp composition with a polymer additive for polishing noble metals
IL182170A IL182170A (en) 2004-10-12 2007-03-25 Method for polishing noble metals with cmp composition containing a polymer additive

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/963,108 2004-10-12
US10/963,108 US7563383B2 (en) 2004-10-12 2004-10-12 CMP composition with a polymer additive for polishing noble metals

Publications (3)

Publication Number Publication Date
WO2006044417A2 WO2006044417A2 (en) 2006-04-27
WO2006044417A3 true WO2006044417A3 (en) 2006-08-10
WO2006044417B1 WO2006044417B1 (en) 2006-08-31

Family

ID=35677420

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/036577 WO2006044417A2 (en) 2004-10-12 2005-10-11 Cmp composition with a polymer additive for polishing noble metals

Country Status (9)

Country Link
US (1) US7563383B2 (en)
EP (1) EP1799785A2 (en)
JP (1) JP5583888B2 (en)
KR (1) KR101128551B1 (en)
CN (1) CN101040021B (en)
IL (1) IL182170A (en)
MY (1) MY144187A (en)
TW (1) TWI308924B (en)
WO (1) WO2006044417A2 (en)

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US7803203B2 (en) * 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8008202B2 (en) * 2007-08-01 2011-08-30 Cabot Microelectronics Corporation Ruthenium CMP compositions and methods
EP2237311A4 (en) * 2008-02-01 2011-11-30 Fujimi Inc Polishing composition and polishing method using the same
US8247326B2 (en) * 2008-07-10 2012-08-21 Cabot Microelectronics Corporation Method of polishing nickel-phosphorous
US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
US9080079B2 (en) * 2009-04-22 2015-07-14 Lg Chem, Ltd. Slurry for chemical mechanical polishing
CN101955731A (en) * 2009-07-13 2011-01-26 安集微电子（上海）有限公司 Chemical mechanical polishing solution
JP5321430B2 (en) * 2009-12-02 2013-10-23 信越半導体株式会社 Polishing agent for polishing silicon wafer and polishing method for silicon wafer
KR20130136593A (en) 2010-03-12 2013-12-12 히타치가세이가부시끼가이샤 Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same
US9881801B2 (en) 2010-11-22 2018-01-30 Hitachi Chemical Company, Ltd. Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
US8610280B2 (en) 2011-09-16 2013-12-17 Micron Technology, Inc. Platinum-containing constructions, and methods of forming platinum-containing constructions
JP6044630B2 (en) 2012-02-21 2016-12-14 日立化成株式会社 Abrasive, abrasive set, and substrate polishing method
KR102004570B1 (en) 2012-02-21 2019-07-26 히타치가세이가부시끼가이샤 Abrasive, abrasive set, and method for abrading substrate
KR20150014924A (en) * 2012-04-18 2015-02-09 가부시키가이샤 후지미인코퍼레이티드 Polishing composition
WO2013175859A1 (en) 2012-05-22 2013-11-28 日立化成株式会社 Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
JP5943072B2 (en) 2012-05-22 2016-06-29 日立化成株式会社 Slurry, polishing liquid set, polishing liquid and polishing method for substrate
US11026765B2 (en) 2013-07-10 2021-06-08 H2O Tech, Inc. Stabilized, water-jet slurry apparatus and method
CN104073169B (en) * 2014-06-10 2015-07-22 大庆佳昌晶能信息材料有限公司 Chemical mechanical polishing agent for compound semiconductors
US11820919B2 (en) * 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation

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US6604987B1 (en) * 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
US20040006924A1 (en) * 2002-02-11 2004-01-15 Scott Brandon Shane Free radical-forming activator attached to solid and used to enhance CMP formulations
WO2004031455A2 (en) * 2002-10-01 2004-04-15 Universtiy Of Florida Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures
WO2005005561A1 (en) * 2003-06-30 2005-01-20 Cabot Microelectronics Corporation Cmp of noble metals
WO2005071031A1 (en) * 2004-01-09 2005-08-04 Cabot Microelectronics Corporation Polishing system comprising a highly branched polymer

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WO2003062338A1 (en) * 2002-01-18 2003-07-31 Cabot Microelectronics Corporation Cmp systems and methods utilizing amine-containing polymers
US20040006924A1 (en) * 2002-02-11 2004-01-15 Scott Brandon Shane Free radical-forming activator attached to solid and used to enhance CMP formulations
US6604987B1 (en) * 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
WO2004031455A2 (en) * 2002-10-01 2004-04-15 Universtiy Of Florida Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures
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Also Published As

Publication number Publication date
CN101040021A (en) 2007-09-19
US20060076317A1 (en) 2006-04-13
WO2006044417B1 (en) 2006-08-31
JP2008516465A (en) 2008-05-15
WO2006044417A2 (en) 2006-04-27
TWI308924B (en) 2009-04-21
CN101040021B (en) 2012-06-20
JP5583888B2 (en) 2014-09-03
US7563383B2 (en) 2009-07-21
IL182170A (en) 2011-12-29
KR20070084096A (en) 2007-08-24
IL182170A0 (en) 2007-07-24
TW200624527A (en) 2006-07-16
EP1799785A2 (en) 2007-06-27
MY144187A (en) 2011-08-15
KR101128551B1 (en) 2012-03-23

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