WO2006041730A3 - Method and system for a programming approach for a nonvolatile electronic device - Google Patents
Method and system for a programming approach for a nonvolatile electronic device Download PDFInfo
- Publication number
- WO2006041730A3 WO2006041730A3 PCT/US2005/035296 US2005035296W WO2006041730A3 WO 2006041730 A3 WO2006041730 A3 WO 2006041730A3 US 2005035296 W US2005035296 W US 2005035296W WO 2006041730 A3 WO2006041730 A3 WO 2006041730A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electronic device
- programming
- reference voltage
- nonvolatile electronic
- initial
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5634—Reference cells
Abstract
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT001904A ITMI20041904A1 (en) | 2004-10-07 | 2004-10-07 | "METHOD AND SYSTEM FOR A PROGRAMMING APPROACH FOR A NON-VOLATILE ELECTRONIC DEVICE" |
ITMI2004A001904 | 2004-10-07 | ||
US11/128,939 US7345921B2 (en) | 2004-10-07 | 2005-05-12 | Method and system for a programming approach for a nonvolatile electronic device |
US11/128,939 | 2005-05-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006041730A2 WO2006041730A2 (en) | 2006-04-20 |
WO2006041730A3 true WO2006041730A3 (en) | 2006-08-17 |
Family
ID=36148805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/035296 WO2006041730A2 (en) | 2004-10-07 | 2005-09-30 | Method and system for a programming approach for a nonvolatile electronic device |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2006041730A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2944295B1 (en) | 2009-04-10 | 2014-08-15 | Saint Gobain Coating Solutions | MOLYBDENE-BASED TARGET AND THERMAL PROJECTION DELIVERY METHOD OF A TARGET |
FR2944293B1 (en) | 2009-04-10 | 2012-05-18 | Saint Gobain Coating Solutions | THERMAL PROJECTION DEVELOPING METHOD OF A TARGET |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5509134A (en) * | 1993-06-30 | 1996-04-16 | Intel Corporation | Method and apparatus for execution of operations in a flash memory array |
US5757699A (en) * | 1996-06-03 | 1998-05-26 | Nec Corporation | Programming which can make threshold voltages of programmed memory cells have a narrow distribution in a nonvolatile semiconductor memory |
US20060028875A1 (en) * | 2004-07-26 | 2006-02-09 | M-Systems Flash Disk Pioneers, Ltd. | Drift compensation in a flash memory |
-
2005
- 2005-09-30 WO PCT/US2005/035296 patent/WO2006041730A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5509134A (en) * | 1993-06-30 | 1996-04-16 | Intel Corporation | Method and apparatus for execution of operations in a flash memory array |
US5757699A (en) * | 1996-06-03 | 1998-05-26 | Nec Corporation | Programming which can make threshold voltages of programmed memory cells have a narrow distribution in a nonvolatile semiconductor memory |
US20060028875A1 (en) * | 2004-07-26 | 2006-02-09 | M-Systems Flash Disk Pioneers, Ltd. | Drift compensation in a flash memory |
Also Published As
Publication number | Publication date |
---|---|
WO2006041730A2 (en) | 2006-04-20 |
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