WO2006036604A1 - High output group iii nitride light emitting diodes - Google Patents
High output group iii nitride light emitting diodes Download PDFInfo
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- WO2006036604A1 WO2006036604A1 PCT/US2005/033239 US2005033239W WO2006036604A1 WO 2006036604 A1 WO2006036604 A1 WO 2006036604A1 US 2005033239 W US2005033239 W US 2005033239W WO 2006036604 A1 WO2006036604 A1 WO 2006036604A1
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- light emitting
- emitting diode
- diode according
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- dominant wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
Definitions
- the present invention relates to light emitting diodes (LEDs) and in particular relates to LEDs formed with active portions of Group III nitrides on silicon carbide substrates.
- a light emitting diode is a p-n junction semiconductor diode that emits photons when forward biased.
- light emitting diodes produce light based upon the movement of electrons in a semiconductor material. Therefore, LEDs do not require (although they can be used in conjunction with) vapors or phosphors. They share the desirable characteristics of most semiconductor-based devices, including high efficiency (their emissions include little or no heat), high reliability and long life. For example, typical LEDs have a mean time between failures of between about 100,000 and 1,000,000 hours meaning that a conservative half lifetime for an LED is on the order of 50,000 hours.
- an LED's emitted light has a frequency (which in turn relates directly to wavelength and color in accordance with well-understood principles of physics) based upon the energy difference between permitted energy levels in the material, a characteristic referred to as the bandgap.
- the bandgap is a fundamentally property of the semiconductor material and its doping.
- LEDs formed in silicon Si, bandgap of 1.12 electron volts (eV)
- eV electron volts
- LEDs formed in gallium arsenide bandgap 1.42 eV
- silicon-doped aluminum gallium arsenide AlGaAs
- AlGaAs silicon-doped aluminum gallium arsenide
- Such materials include diamond (5.47 eV), silicon carbide (2.99 eV) and Group III nitrides such as GaN (3.4 eV).
- wide bandgap LEDs can be combined with red and green LEDs to produce white light, or with phosphors that produce white light when excited by blue or UV light, or both.
- the Group III nitride compositions i.e., Group III of the periodic table
- GaN, AlGaN, InGaN and AlInGaN are particularly useful for blue-emitting LEDs.
- they are "direct" emitters, meaning that when an electron transition occurs across the bandgap, much of the energy is emitted as light.
- Group III nitrides offer efficiency advantages over indirect transition materials.
- the Group III nitrides will also be referred to herein as the Group III nitride material system.
- the bandgap of ternary and quaternary Group III materials depends upon the atomic fraction of the included Group III elements.
- the wavelength (color) of the emission can be tailored (within limits) by controlling the atomic fraction of each Group III element in a ternary or quaternary nitride.
- GaP gallium-arsenide or gallium phosphide
- blue and UV-emitting LEDs have lagged behind GaP -based LED's in their commercial appearance.
- silicon carbide is physically very hard, has no melt phase, and requires high temperatures (on the order of about 1500-2000 °C) for epitaxial or sublimation growth.
- the Group III nitrides have relatively large nitrogen vapor pressures at their melting temperatures and thus are likewise difficult or impossible to grow from a melt.
- lighting is typically quantified as to its output.
- One typical unit of measure is the lumen, defined as a unit of luminous flux equal to the light emitted in a unit solid angle by a uniform point source of one candela (cd) intensity, hi turn, the candela is the base unit of luminous intensity in the International System of Units that is equal to the luminous intensity in a given direction of a source which emits monochromatic radiation of frequency 540 x 1012 hertz and has a radiant intensity in that direction of 1/683 watt per unit solid angle.
- an intensity of 1200-1800 lumens is typical of incandescent bulbs and 1000-6000 lumens (depending upon circumstances) is typical in natural daylight.
- Light emitting diodes are much less intense, for example on the order of about 10-100 lumens.
- One reason is their small size.
- applications for single (or small groups of) LEDs have historically gravitated towards indication (e.g. the register of a hand-held calculator) rather than illumination (a reading lamp).
- indication e.g. the register of a hand-held calculator
- illumination a reading lamp
- the output of LEDs is often measured in units other than lumens. Additionally, an LED's output also depends upon the applied current, which in turn depends upon the potential difference applied across the diode. Thus, the output of an LED is often referred to as its radiant flux (R f ) and is expressed in milliwatts (mW) at a standard 20 milliamp (niA) drive current.
- Blue LEDs are becoming more frequently included in consumer electronic devices, particularly small displays. Common examples include items such as computer screens, personal digital assistants ("PDAs”) and cellular phones, hi turn, these small devices drive demand for LEDs with reduced size (“footprint”). Such LEDs, however, must still operate at low forward voltages (V f ) and high light output. To date, however, reducing the size of the blue-emitting Group III nitride devices has tended to increase their forward voltage and reduce their radiant flux. - A -
- the LEDs disclosed in the '965 application offers significant advantages in increased brightness (using the standard parameters noted above) and reduced forward voltage even at small size.
- LEDs are advantageous for smaller devices (such as cellular phone displays); the incorporation of LEDs into larger devices presents different challenges. For example, using greater numbers of small diodes in larger displays can reduce energy conversion, increase power consumption and require the manufacturer to purchase, assemble and maintain a greater number of components. Larger numbers of smaller components can also increase weight, size, volume and the number of required electrical connections. Statistically, larger numbers of smaller devices will include a larger absolute number of defects and may require the manufacturer to maintain larger inventories in order to maintain or increase a given reliability.
- CTRs cathode ray tubes
- LCD liquid crystal
- liquid crystal displays operate by changing the orientation of liquid crystals, and thus their appearance, using appropriate electrical controls. Liquid crystals do not emit light, however, and thus LCD displays such as televisions must be back lit by some additional source.
- LCD displays such as televisions must be back lit by some additional source.
- RGB red, green, and blue
- white light emitting diodes offers such an appropriate back lighting source.
- a large display requires a large number of light emitting diodes.
- the individual diodes must be physically supported and functionally incorporated into electronic circuits.
- light emitting diodes are highly efficient in comparison to incandescent lighting, they still generate a finite amount of energy as heat.
- incorporating hundreds or thousands of light emitting diodes into larger applications, particularly those used indoors correspondingly generates noticeable, or even troublesome amounts of heat and other technological challenges.
- both complexity and heat are typical problems that must be addressed in designing and using electronic equipment (including large flat-panel displays) that incorporates LEDs, a need exists, and corresponding benefits are desired, for further increasing the efficiency and output of light emitting diodes.
- This need includes the call for light emitting diodes that produce white light from blue emitting diodes either by incorporating phosphors or through their combination with red and green LEDs. [0020] Accordingly, a need exists for continual improvement in the output of small- size LEDs formed in the Group III nitride silicon carbide material system.
- the invention is a light emitting diode comprising a silicon carbide single crystal substrate, a light emitting structure formed from the Group III nitride material system on the single crystal substrate, the diode having an area greater than 100,000 square microns, and in many examples at least one side that is at least 400 microns in length, and the diode having a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
- the invention is a light emitting diode comprising quantum efficiency a silicon carbide single crystal substrate, a light emitting structure formed from the Group III nitride material system on the single crystal substrate, the diode having an area of at least 100,000 square microns, and in many examples at least one side that is at least 400 microns in length and, and the diode having an external quantum efficiency greater than 50 percent at 20 milliamps current at its dominant wavelength between 390 and 540 nanometers.
- the invention is a light emitting diode comprising a silicon carbide single crystal substrate, a light emitting structure formed from the Group III nitride material system on the single crystal substrate, the diode having an area of at least 100,000 square microns, and in many examples at least one side that is at least 400 microns in length, and the diode having an optical power efficiency of at least 50 percent at a dominant wavelength between 450 and 460 nanometers.
- Figure 1 is a cross sectional schematic view of one embodiment of a diode according to the present invention.
- Figure 2 is a plot of radiant flux as against dominant wavelength in nanometers that includes LEDs according to the present invention.
- Figure 3 is a plot of external quantum efficiency as against dominant wavelength that includes LEDs according to the present invention.
- Figure 4 is a plot of optical power efficiency versus dominant wavelength for LEDs according to the present invention.
- Figure 5 is a plot of light enhancement as against chip size for diodes according to the present invention.
- Figure 6 is a plot of luminous efficiency versus wavelength for various diodes including those according to the present invention, and in comparison to theoretical maxima.
- the invention is a light emitting diode formed in the Group III nitride material system, often on silicon carbide (SiC) substrates.
- the diodes according to the present invention have an area greater than 100,000 square microns and, as set forth in the following discussion and in the drawings, properties such as a radiant flux at 20 milliamps current of at least 29 milliwatts at the diode's dominant wavelength between 390 and 540 nanometers.
- diodes of this size will typically have at least one side that is at least 400 microns in length, with exemplary diodes forming a square with each side being 420 microns.
- the diodes In the blue frequencies, the diodes have a radiant flux at 20 milliamps current of at least 29 milliwatts at the dominant wavelength between 450 and 460 nanometers.
- the diode In the green frequencies, the diode has a radiant flux of at least 12 milliwatts at its dominant wavelength between 530 and 540 nanometers.
- FIG. 1 is a cross sectional view of a light emitting diode broadly designated at 20 having the performance characteristics of the present invention.
- the diode 20 includes a transparent silicon carbide substrate 21 which is preferably a single crystal and has a polytype selected from the 3C, 4H, 6H, and 15R polytypes of silicon carbide with 4H often being preferred in the context of the present invention.
- Figure 1 illustrates the diode 20 in the "flip chip” orientation (i.e., mounted for use with the active layers below the substrate), the substrate 21 appears at the top of the diode 20 rather than the bottom. In this orientation, the SiC substrate becomes the primary emitting surface of the LED.
- light emitting diodes can be placed in a number of different positions and orientations in end use.
- the terms, "top,” and “bottom,” are relative and generally indicate the orientation of the device in a structural sense.
- references to layers being "on” one another can include layers that are above, but not in direct contact with, other layers. The meaning will be clear in context.
- the diode includes at least one, and preferably several, layers that form the light emitting ("active") portions. These layers are selected from the Group III nitride material system. Two layers are shown in Figure 1, an n-type layer 22 and a p-type layer 23. These opposite conductivity type layers provide the opportunity for current to flow through the diode and the resulting combination of electrons and holes that generate the emitted photons.
- Group III nitride layers are illustrated in Figure 1, it will be understood that in other contexts, additional layers can be used including superlattice structures and multiple quantum wells, hi particular, buffer layers are often included for providing a crystal and electronic transition from the SiC substrate to the Group III light emitting layers.
- additional layers can be used including superlattice structures and multiple quantum wells, hi particular, buffer layers are often included for providing a crystal and electronic transition from the SiC substrate to the Group III light emitting layers.
- Such structures are well-understood in this art and can be practiced in the context of the present invention without undue experimentation.
- the embodiment illustrated in Figure 1 also includes a mirror layer 24 which is typically formed of silver (Ag) or a silver-platinum (Ag/Pt) alloy.
- the silver-based layer also provides electrical contact to the active layers 22, 23.
- a barrier layer 25 typically formed of a titanium tungsten (TiW) alloy, or platinum, or both, or of titanium tungsten nitride (TiWN), encloses the silver-based layer 24 in order to prevent undesired migration and reaction of silver with other portions of the device.
- a solder layer 26 is attached to the barrier layer 25 typically, but not exclusively, based upon the method of making the diode.
- the metal or semiconductor support layer 27 can be omitted, with or without the solder layer 26.
- the backside ohmic contact 30 is positioned against the mirror and barrier metals 24, 25.
- the active layers are typically selected from the Group III nitride material system, with gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), and aluminum indium gallium nitride (AlInGaN) being appropriate selections.
- Diodes according to the invention have an area greater than 100,000 square microns. Examples include, but are not limited to diodes that have at least one side that is at least 400 microns in length and that are square or rectangular in their geometry.
- Diodes according to the invention can also incorporate lenticular surfaces.
- Figure 2 is a comparative plot of radiant flux in milliwatts (mW) as against dominant wavelength in nanometers (nm) for diodes according to the present invention. Data points for other diodes are plotted using the diamond shapes (lower curve), while the larger diodes according to the present invention are plotted using the squares (upper curve).
- the respective diodes are operated and evaluated at 20 milliamps (mA) current.
- the current density at any given current is lower.
- the lower current density typically produces a higher light output from the light emitting layer.
- forward voltage decreases as chip area increases at any given current.
- diodes according to the present invention demonstrate forward voltage as low as 2.9 volts versus 3.1 volts for diodes according to the '965 application.
- diodes according to the present invention offer the capability for brighter displays using power levels equivalent to current diodes or, as may be desired or necessary, brightness equivalent to current diodes at lower power and higher efficiency.
- Figure 2 shows three diodes according to the present invention that emit at a wavelength of approximately 450 nanometers (i.e., blue at a dominant wavelength of 453-456 nm) and produce a radiant flux of between about 29 and 31 milliwatts. This compares (vertical dotted line) to an output of about 25-26 milliwatts for the somewhat smaller diodes ("XT300;" about 90,000 square microns). In particular, when based on the smaller chip sizes, the invention represents an increase of about 14 percent in radiant flux.
- Radiant flux (e.g. Figure 2) is measured by placing an encapsulated lamp of the Tl-% type in an integrating sphere attached to a spectrometer, with the Labsphere Omni LTS spectrometer for visible LEDs being an exemplary measurement device. Radiant flux is measured in units of power (Watts). The other comparative factors — e.g. external quantum efficiency, power efficiency, and brightness enhancement — are all based on these radiant flux measurements.
- the improvement is about 2-3 milliwatts at each data point representing an increase of about 25 percent as compared to the XT300 diodes.
- the diodes have a radiant flux of at least 12 mW at dominant wavelengths between 520 and 540 nm; 13 mW between 524 and 535 nm; and 15 mW between 524 and 527 nm.
- Figure 3 offers similar comparative data expressed as external quantum efficiency.
- Figure 3 plots data points from the XT300 diodes as diamonds and from the improved diodes according to the present invention as squares.
- saturation refers to the observed point at which an increase in current no longer increases the LED's output (whether expressed as an external quantum efficiency or radiant flux).
- lower current density has a larger positive effect on green LEDs.
- the current density will be a function of the size of the chip.
- a larger area LED exhibits a proportionally smaller current density at 20 milliamps (or any other given current). This means that the saturation point for the larger-size green LEDs according to the invention will increase as compared to smaller-area green LEDs. This is illustrated in Figure 5.
- Figure 4 plots optical power efficiency (as used herein, milliwatts of light output per milliwatts of electrical power applied) for smaller-area diodes (shown as squares) and diodes according to the present invention (shown as diamonds). These are again plotted against the dominant wavelength in nanometers.
- the absolute increase in optical power efficiency is from 40 percent for the comparative diodes to 50-54 percent for the diodes according to the invention. This 10 percent absolute increase represents a 20 percent relative increase as between the two diodes.
- Figure 5 is a comparative plot of brightness enhancement (arbitrary units) as against chip size for diodes, including those according to the present invention.
- the compared diodes are not limited to chip sizes of 300 microns per side, the 300 micron side size is an appropriate breaking point for comparison purposes, particularly with respect to diodes according to the present invention.
- the diodes emitting in the blue frequencies are plotted using the diamond shapes and the lower line, and those emitting in the green frequencies (about 530 nanometers) are plotted using the open squares and the upper line.
- Figure 5 is also normalized using the output of a 300 by 300 nanometer chip. Accordingly, Figure 5 clearly demonstrates that both the blue and green emitting LEDs according to the invention offer strikingly enhanced comparative output.
- the more linear nature of the results for the green-emitting diodes reflects lower absorption of green in the crystal and the advantage of lower current density with a larger area.
- the performance of the blue LEDs tends to level out or tail over based upon a higher absorption and lesser advantage based on the lower current density.
- Figure 5 also illustrates that diodes according to the present invention have their greatest increase in brightness enhancement at areas between about 100,000 and 200,000 square microns.
- Figure 6 is a plot of luminous efficiency (lumens per watt) for diodes according to the present invention and in comparison to other diodes and to theoretical maxima.
- the output and performance of a light emitting diode can be characterized using several related, but not identical, parameters.
- Luminous efficiency as plotted in Figure 6 is equal to the energy conversion efficiency of the light emitting diode in converting electrical power into luminous flux.
- For an LED power (in watts) is the product of the forward current and the forward voltage. Luminous efficiency is accordingly expressed as lumens per watt.
- the human eye is sensitive to light having wavelengths of between about 410 and 720 nm (the "visible" spectrum). Furthermore, within the visible spectrum, the eye responds differently to different wavelengths. As a result, the luminous flux is related to — and differs from — the radiant flux by a factor equivalent to the sensitivity of the human eye.
- the solid bold line in Figure 6 illustrates the theoretical maximum luminous efficiency observable by the human eye. At any given wavelength, the theoretical maximum is the "highest" point on the plot of Figure 6.
- Figure 6 plots the luminous efficiency curve for an aluminum indium gallium phosphide (AlLiGaP) light emitting diode as the series of triangles with emissions between about 570 and 650 nm.
- AlLiGaP aluminum indium gallium phosphide
- Diodes according to the invention are plotted as the diamond shapes in Figure
- the invention is a blue light emitting diode with a luminous efficiency above 15 lumens per watt at a dominant wavelength between 450 and 460 nm.
- the invention is a green light emitting diode with a luminous efficiency greater than 100 lumens per watt at a dominant wavelength between 520 and 540 nanometers.
- the term "dominant wavelength" describes a measure of the hue sensation produced in the human eye by a light emitting diode.
- the dominant wavelength is determined by drawing a straight line through the color coordinates of a reference illuminant and the measured chromaticity coordinates of the LED in the International Commission on Illumination (CIE) 1931 chromaticity diagram. The intersection of the straight-line on the boundary of the chromaticity diagram gives the dominant wavelength.
- CIE International Commission on Illumination
- the peak wavelength is the wavelength at the maximum spectral power.
- the peak wavelength may have less significance for practical purposes because two different light emitting diodes may have the same peak wavelength, but different color perception.
- Radiant flux which is also referred to as the radiant power, is the rate (d ⁇ /dt) at which the radiation field transfers radiant energy from one region to another. As noted above, if theta ( ⁇ ) is the radiant energy, the unit of radiant power is the watt. [0071] An appropriate discussion of these and other optical characteristics of light emitting diodes is set forth in the Labsphere Technical Guide, "The Radiometry of Light Emitting Diodes,” from Labsphere Inc. of North Sutton New Hampshire. [0072] As known to those familiar with light emitting diodes and their packages, of the photons generated by current injected through the diode, less than 100% escape externally from the diode.
- EQE (%) (radiant flux) x (wavelength ⁇ ) x 100 (1240) x (drive current)
- the light emitting area or surface is defined as the "footprint" of the device.
- area means the largest area of semiconductor or substrate material within the die or chip, because this largest dimension is the one that the circuit or device designer must deal with in using the individual light emitting diode.
- the area is the larger of either (i) the largest semiconductor area in the diode or (ii) the substrate area of the diode that must or will be packaged, hi almost all circumstances, area (ii) is greater or equal to area (i).
Abstract
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Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007533557A JP2008514031A (en) | 2004-09-22 | 2005-09-15 | High power group III light emitting diode |
CN2005800320282A CN101027784B (en) | 2004-09-22 | 2005-09-15 | High output group III nitride light emitting diodes |
KR1020097017903A KR20090103960A (en) | 2004-09-22 | 2005-09-15 | High output group iii nitride light emitting diodes |
EP05808877.4A EP1792352B1 (en) | 2004-09-22 | 2005-09-15 | High output group iii nitride light emitting diodes |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/951,042 US7259402B2 (en) | 2004-09-22 | 2004-09-22 | High efficiency group III nitride-silicon carbide light emitting diode |
US10/951,042 | 2004-09-22 | ||
US11/037,965 US8513686B2 (en) | 2004-09-22 | 2005-01-18 | High output small area group III nitride LEDs |
US11/037,965 | 2005-01-18 | ||
US11/082,470 US8174037B2 (en) | 2004-09-22 | 2005-03-17 | High efficiency group III nitride LED with lenticular surface |
US11/082,470 | 2005-03-17 | ||
US11/112,429 | 2005-04-22 | ||
US11/112,429 US7737459B2 (en) | 2004-09-22 | 2005-04-22 | High output group III nitride light emitting diodes |
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WO2006036604A1 true WO2006036604A1 (en) | 2006-04-06 |
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US (2) | US7737459B2 (en) |
EP (1) | EP1792352B1 (en) |
JP (1) | JP2008514031A (en) |
KR (1) | KR20070046181A (en) |
TW (1) | TWI314787B (en) |
WO (1) | WO2006036604A1 (en) |
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Also Published As
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US9905731B2 (en) | 2018-02-27 |
JP2008514031A (en) | 2008-05-01 |
EP1792352B1 (en) | 2017-11-01 |
US20060060872A1 (en) | 2006-03-23 |
US20100244052A1 (en) | 2010-09-30 |
EP1792352A1 (en) | 2007-06-06 |
TW200623465A (en) | 2006-07-01 |
TWI314787B (en) | 2009-09-11 |
US7737459B2 (en) | 2010-06-15 |
KR20070046181A (en) | 2007-05-02 |
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