WO2006036599A3 - Light emitting diodes exhibiting both high reflectivity and high light extraction - Google Patents
Light emitting diodes exhibiting both high reflectivity and high light extraction Download PDFInfo
- Publication number
- WO2006036599A3 WO2006036599A3 PCT/US2005/033210 US2005033210W WO2006036599A3 WO 2006036599 A3 WO2006036599 A3 WO 2006036599A3 US 2005033210 W US2005033210 W US 2005033210W WO 2006036599 A3 WO2006036599 A3 WO 2006036599A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- array
- light emitting
- internally generated
- emitting diode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/952,112 US7352006B2 (en) | 2004-09-28 | 2004-09-28 | Light emitting diodes exhibiting both high reflectivity and high light extraction |
US10/952,112 | 2004-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006036599A2 WO2006036599A2 (en) | 2006-04-06 |
WO2006036599A3 true WO2006036599A3 (en) | 2006-08-10 |
Family
ID=36119385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/033210 WO2006036599A2 (en) | 2004-09-28 | 2005-09-16 | Light emitting diodes exhibiting both high reflectivity and high light extraction |
Country Status (2)
Country | Link |
---|---|
US (1) | US7352006B2 (en) |
WO (1) | WO2006036599A2 (en) |
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DE102004013915A1 (en) * | 2004-03-22 | 2005-10-13 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Mercury low-pressure discharge lamp for plant lighting |
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US7837348B2 (en) | 2004-05-05 | 2010-11-23 | Rensselaer Polytechnic Institute | Lighting system using multiple colored light emitting sources and diffuser element |
US8154030B2 (en) * | 2004-10-01 | 2012-04-10 | Finisar Corporation | Integrated diode in a silicon chip scale package |
US7256483B2 (en) * | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
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JP4476912B2 (en) * | 2005-09-29 | 2010-06-09 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
KR101316415B1 (en) * | 2005-10-17 | 2013-10-08 | 엘지이노텍 주식회사 | Nitride semiconductor light-emitting device and manufacturing method thereof |
US7479660B2 (en) * | 2005-10-21 | 2009-01-20 | Perkinelmer Elcos Gmbh | Multichip on-board LED illumination device |
DE102005061204A1 (en) * | 2005-12-21 | 2007-07-05 | Perkinelmer Elcos Gmbh | Lighting device, lighting control device and lighting system |
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JP5250856B2 (en) * | 2006-06-13 | 2013-07-31 | 豊田合成株式会社 | Method for manufacturing gallium nitride compound semiconductor light emitting device |
US7703942B2 (en) * | 2006-08-31 | 2010-04-27 | Rensselaer Polytechnic Institute | High-efficient light engines using light emitting diodes |
US20080087875A1 (en) * | 2006-10-11 | 2008-04-17 | Feng-Hsu Fan | Protection for the epitaxial structure of metal devices |
US7889421B2 (en) * | 2006-11-17 | 2011-02-15 | Rensselaer Polytechnic Institute | High-power white LEDs and manufacturing method thereof |
JP2010512662A (en) | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Transparent light emitting diode |
DE102007015492B4 (en) * | 2007-01-30 | 2011-03-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Illumination device for an image capture device at the distal end of an endoscope |
US7985979B2 (en) | 2007-12-19 | 2011-07-26 | Koninklijke Philips Electronics, N.V. | Semiconductor light emitting device with light extraction structures |
JP2010073841A (en) * | 2008-09-18 | 2010-04-02 | Sony Corp | Optical package element, display device, and electronic apparatus |
KR101550922B1 (en) * | 2009-03-10 | 2015-09-07 | 엘지이노텍 주식회사 | light emitting device |
US8455903B2 (en) * | 2009-04-20 | 2013-06-04 | 3M Innovative Properties Company | Non-radiatively pumped wavelength converter |
US8455904B2 (en) | 2009-04-20 | 2013-06-04 | 3M Innovative Properties Company | Non-radiatively pumped wavelength converter |
US8513110B2 (en) * | 2009-06-14 | 2013-08-20 | Jayna Sheats | Processes and structures for beveled slope integrated circuits for interconnect fabrication |
CN102481014B (en) * | 2009-09-03 | 2013-12-25 | 埃科莱布美国股份有限公司 | Electrolytic degradation systems and methods usable in industrial applications |
KR101039931B1 (en) * | 2009-10-21 | 2011-06-09 | 엘지이노텍 주식회사 | Light emitting device and method for fabricating the same |
US20110121726A1 (en) * | 2009-11-23 | 2011-05-26 | Luminus Devices, Inc. | Solid-state lamp |
JP5849215B2 (en) | 2010-06-21 | 2016-01-27 | パナソニックIpマネジメント株式会社 | Ultraviolet semiconductor light emitting device |
WO2012049607A1 (en) * | 2010-10-12 | 2012-04-19 | Koninklijke Philips Electronics N.V. | Pec biasing technique for leds |
KR101209449B1 (en) * | 2011-04-29 | 2012-12-07 | 피에스아이 주식회사 | Full-color LED display device and manufacturing method thereof |
US9653643B2 (en) | 2012-04-09 | 2017-05-16 | Cree, Inc. | Wafer level packaging of light emitting diodes (LEDs) |
US9178123B2 (en) | 2012-12-10 | 2015-11-03 | LuxVue Technology Corporation | Light emitting device reflective bank structure |
US9159700B2 (en) | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
US9029880B2 (en) | 2012-12-10 | 2015-05-12 | LuxVue Technology Corporation | Active matrix display panel with ground tie lines |
US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
US10516084B2 (en) | 2014-10-31 | 2019-12-24 | eLux, Inc. | Encapsulated fluid assembly emissive elements |
US11306897B2 (en) | 2015-02-09 | 2022-04-19 | Ecosense Lighting Inc. | Lighting systems generating partially-collimated light emissions |
US9869450B2 (en) | 2015-02-09 | 2018-01-16 | Ecosense Lighting Inc. | Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector |
US10801696B2 (en) | 2015-02-09 | 2020-10-13 | Ecosense Lighting Inc. | Lighting systems generating partially-collimated light emissions |
JP2018028647A (en) * | 2016-08-20 | 2018-02-22 | セイコーエプソン株式会社 | Wavelength conversion element, light source device, and projector |
KR20180060704A (en) * | 2016-11-29 | 2018-06-07 | 광주과학기술원 | Micro-Display of having verically Stacking Structure and Method of forming the same |
JP7079106B2 (en) * | 2018-01-24 | 2022-06-01 | シャープ株式会社 | Image display element and manufacturing method of image display element |
EP3906581A4 (en) * | 2019-01-02 | 2022-11-16 | Lumiode, Inc. | System and method of fabricating display structures |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Citations (3)
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US20040160154A1 (en) * | 2002-11-26 | 2004-08-19 | Teiichiro Nishimura | Light emitting device and display unit using it |
US20050087754A1 (en) * | 2003-04-15 | 2005-04-28 | Erchak Alexei A. | Light emitting systems |
US20050173714A1 (en) * | 2004-02-06 | 2005-08-11 | Ho-Shang Lee | Lighting system with high and improved extraction efficiency |
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-
2004
- 2004-09-28 US US10/952,112 patent/US7352006B2/en not_active Expired - Fee Related
-
2005
- 2005-09-16 WO PCT/US2005/033210 patent/WO2006036599A2/en active Application Filing
Patent Citations (3)
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US20040160154A1 (en) * | 2002-11-26 | 2004-08-19 | Teiichiro Nishimura | Light emitting device and display unit using it |
US20050087754A1 (en) * | 2003-04-15 | 2005-04-28 | Erchak Alexei A. | Light emitting systems |
US20050173714A1 (en) * | 2004-02-06 | 2005-08-11 | Ho-Shang Lee | Lighting system with high and improved extraction efficiency |
Also Published As
Publication number | Publication date |
---|---|
US20060071225A1 (en) | 2006-04-06 |
WO2006036599A2 (en) | 2006-04-06 |
US7352006B2 (en) | 2008-04-01 |
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