WO2006027900A1

WO2006027900A1 - Coating and developing apparatus, resist pattern forming method, exposure apparatus and cleaning apparatus

Info

Publication number: WO2006027900A1
Application number: PCT/JP2005/013397
Authority: WO
Inventors: Taro Yamamoto; Masahiro Fukuda; Seiki Ishida
Original assignee: Tokyo Electron Limited
Priority date: 2004-09-10
Filing date: 2005-07-21
Publication date: 2006-03-16
Also published as: TW200632988A; JP4271109B2; TWI270924B; JP2006080403A

Abstract

A coating/developing apparatus by which particles adhered on a semiconductor wafer are removed by a simple structure after resist coating and prior to immersion exposure or after immersion exposure and prior to development. Prior to the immersion exposure, the wafer is cleaned by using a nozzle part provided with slit-shaped parallel suction ports on the both sides of a cleaning liquid discharge port having a length equivalent to substantially the diameter of the wafer. The nozzle part is provided with a U-shaped part, which surrounds the circumference of the wafer, has cleaning liquid discharge ports on the inner sides of an upper plane part and a lower plane part on the both edge parts of the nozzle part, a suction port surrounding the liquid discharge port on the lower plane part, and a suction port on a side plane part. The wafer is cleaned after the immersion exposure and prior to the development by using the nozzle part. Since the cleaning liquid is sucked while being discharged onto the surface or the circumference part of the wafer, a cup around the wafer for recovering the cleaning solution is eliminated. As a result, a space required for the entire coating/developing apparatus can be saved.

Description

Specification

Coating, developing device, resist pattern forming method, exposure device and cleaning device

[0001] The present invention relates to a coating unit that coats a resist on the surface of a semiconductor wafer, a developing unit that supplies a developing solution to a substrate after a liquid layer is formed on the surface and subjected to immersion exposure, and develops the substrate. The present invention relates to an exposure apparatus and a cleaning apparatus that perform immersion exposure on a semiconductor wafer.

Background art

Conventionally, in a photoresist process, which is one of semiconductor manufacturing processes, a resist is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer), the resist is exposed in a predetermined pattern, and then developed. Then, a resist pattern is created. Such processing is generally performed using a system in which an exposure apparatus is connected to a coating / developing apparatus that performs resist coating / development.

[0003] By the way, in recent years, device patterns have been increasingly miniaturized and thin films have been accelerating. Accordingly, there has been an increasing demand for increasing the resolution of exposure. Therefore, while developing the exposure technology using extreme ultraviolet exposure (EUVL) (= Extream Ultra Violet Lithography), electron beam projection exposure (EPL) (Electron Projection Lithography) and fluorine dimer (F2), the existing light sources such as foot In order to improve the resolution by improving the exposure technology using argon fluoride (ArF) or krypton fluoride (KrF), a method of exposing the substrate surface with a liquid phase that transmits light (hereinafter referred to as `` immersion exposure '') t ヽぅ) is being considered! In the semiconductor and manufacturing equipment industries, there is a strong movement to extend the life of ArF lithography equipment as much as possible, and the view that EUV will be postponed further using ArF up to 45nm. Some are. Immersion exposure is a technology that transmits light through ultrapure water, for example, and uses the feature that the wavelength of ArF at 193 nm is substantially 134 nm in water because the wavelength is shorter in water.

[0004] An exposure apparatus that performs this immersion exposure will be briefly described with reference to FIG. First, a wafer held in a horizontal position by a holding mechanism (not shown), for example, the surface of the wafer W and a gap A lens 10 is provided at the tip of the exposure means 1 arranged so as to face each other with a gap, and a solution for forming a liquid layer on the surface of the wafer W, such as water, is supplied to the outside of the lens 10. There are provided a supply port 11 for suctioning and a suction port 12 for sucking and collecting the water supplied to the wafer W, respectively. In this case, while supplying water from the supply port 11 to the surface of the wafer W and collecting the water through the suction port 12, a liquid film (water film) is formed between the lens 10 and the surface of the wafer W. Is done. Light emitted from a light source (not shown) and passed through the lens 10 passes through the liquid film and is irradiated onto the wafer W, whereby a predetermined circuit pattern is transferred to the resist. Next, for example, as shown in FIG. 16, with the liquid film formed between the wafer W, the exposure means 1 is slid sideways to the position corresponding to the next transfer area (shot area) 13. The circuit pattern is sequentially transferred to the surface of the wafer W by arranging the exposure means 1 and repeating the operation of irradiating light. Note that the shot region 13 is shown larger than the actual size.

[0005] However, the photoresist process using the immersion exposure described above has the following problems. That is, it is difficult to completely eliminate particles in a space where force processing is performed in a tailor room where a downflow is formed in wafer processing in the photoresist process. Here, for example, consider a case where particles adhere to the resist of a wafer that has undergone a resist coating process and the wafer undergoes immersion exposure in that state. When a liquid film is formed on the surface of the resist with respect to the wafer, the particles travel along the liquid film and move on the resist surface. As described above, the exposure means moves together with the liquid film, and the resist pattern is sequentially transferred onto the wafer surface. Therefore, even if the part where the particles are attached is a part of the wafer, the exposure is performed by the particles every time it is transferred. It will be disturbed. As a result, transfer of the resist pattern is hindered, and defective portions of the resist pattern are scattered on the wafer.

[0006] On the other hand, as one problem of immersion exposure, there is a concern that the resist is eluted on the liquid film side and the eluted components remain on the wafer. In particular, the liquid film on the wafer is discharged from the periphery after the exposure is completed, but the peripheral part of the wafer has a bevel structure, so that the elution component can remain on the inclined surface of the peripheral part without falling off. The nature is not low.

In addition, a liquid film is formed on the wafer surface, and the liquid film or droplets easily adsorb particles. Therefore, compared to the normal exposure process, there is a higher probability that particles will adhere to the wafer after immersion exposure, and the liquid film used at the time of immersion exposure becomes droplets on the periphery of the wafer. Immediately after remaining on the inclined surface, particles are easily adsorbed on the peripheral edge.

[0008] For these reasons, there is a high possibility that particles are attached to the peripheral portion of the wafer after immersion exposure. Therefore, the wafer is transported when the wafer is returned to the coating and developing apparatus side. It adheres to the arm and is scattered in the processing unit or transferred to another wafer, causing particle contamination. Also, if particles are attached to the surface of the wafer, particles are attached during the heat treatment, and the temperature of the part is different from the temperature of other parts. During the heat treatment for diffusing the acid catalyst into the resist, the adhesion of particles affects the line width of the pattern. Furthermore, the pattern may be damaged by particles adhering to the wafer during the development process.

[0009] As described above, performing immersion exposure has a particular problem with respect to adhesion of particles.

In order to solve the problem, the wafer is cleaned by the cleaning unit to remove the particles after applying the photoresist, before performing immersion exposure, and after performing Z or immersion exposure and before performing heat treatment. It is effective. In this case, coating units and development units are arranged, called process blocks, and so on. In the processing blocks, the throughput is increased by increasing the number of original processing units as much as possible. It is a good idea to place the cleaning unit in the interface block that bridges the process block and the exposure equipment because there are circumstances that must be earned.

By the way, as a unit for cleaning a wafer, as is well known, it is combined with a coating unit and a developing unit, so that the wafer is rotated while supplying a cleaning liquid to the central portion of the wafer, and then shaken and dried. Spin cleaning is common.

However, in order to collect the scattered cleaning liquid, such a drying apparatus needs to be provided with a cup body in which a recess is formed all around the lower side of the table on which the wafer is placed. The Furthermore, if a suction device or the like is provided to reliably capture the scattered cleaning liquid in the cup, the cleaning unit will be further increased in size. Thus processing such cleaning units It is not realistic because it requires a lot of space to place in the block, and the interface block must save space as much as possible! / Therefore, it is difficult to adopt a design with such a large washing unit.

[0012] In Patent Document 1, after the cleaning liquid is discharged from above the both ends of the wafer to flow on the wafer, it is sucked together with the suction mechanism force developer provided above the center of the wafer. And drying apparatus is disclosed. However, even with such an apparatus, the edge force of the wafer will cause the used cleaning liquid to flow down. For this reason, it is necessary to provide a cup body having an opening on the upper side so as to surround the wafer, and this cup body hinders downsizing of the apparatus.

[0013] Patent Document 1: Japanese Patent Application Laid-Open No. 2004-95708 (Pages 8, 9, 12, and 20)

Disclosure of the invention

Problems to be solved by the invention

[0014] The present invention has been made based on such circumstances, and an object of the present invention is a photoresist process including immersion exposure, which is performed after resist application and before immersion exposure. It is possible to remove particles adhering to the wafer after immersion exposure and before development with a simple structure, while satisfying the requirement of removing particles derived by immersion exposure, a coating and developing device Another object is to provide a technique that does not hinder the space saving of the exposure apparatus. Another object of the present invention is to provide a cleaning apparatus capable of cleaning a wafer with a simple structure.

Means for solving the problem

[0015] The present invention relates to a coating unit for applying a resist to the surface of a semiconductor wafer, and an image unit for supplying a developing solution to the semiconductor wafer after being subjected to immersion exposure by forming a liquid layer on the surface and developing it. And a cleaning unit for cleaning the semiconductor wafer after applying a resist and before immersion exposure, the cleaning unit holding a semiconductor wafer horizontally, and the wafer holding unit The cleaning liquid discharge port is formed so as to be opposed to the surface of the semiconductor wafer held on the substrate and has a length corresponding to the approximate diameter of the semiconductor wafer, and the cleaning liquid discharge port force is used to suck the cleaning liquid discharged to the surface of the semiconductor wafer. A suction port having a length substantially the same as that of the cleaning liquid discharge port is disposed on both sides of the cleaning liquid discharge port. A nozzle unit including the rotation unit that rotates the wafer holding unit relative to the nozzle unit around a vertical axis, and a cleaning position that faces the surface of the semiconductor wafer held by the wafer holding unit. And a moving mechanism that moves the surface force of the semiconductor wafer between the retracted position and the retracted position.

In the present invention, the “cleaning liquid discharge port” is not limited to a slit-like discharge port, and includes a discharge hole group in which a large number of discharge holes are arranged. If the cleaning liquid discharge port is made longer than the “length corresponding to the approximate diameter of the semiconductor wafer,” the discharge liquid cleaning liquid that protrudes from the wafer will only spill, and there is no technical meaning. The case where the length is longer than the “length corresponding to the approximate diameter of” is also included in the scope of the right of the present invention.

[0017] Further, for example, after applying a resist on the surface of a semiconductor wafer using the coating and developing apparatus, a liquid layer is formed on the surface of the semiconductor wafer, and immersion exposure is performed, and then development is performed on the surface of the wafer. According to a resist pattern forming method for supplying and developing a liquid, a cleaning process is performed in which a semiconductor wafer is cleaned after resist coating and before immersion exposure. The cleaning process holds the semiconductor wafer on the wafer. A step of horizontally holding the nozzle portion, a step of relatively positioning the nozzle portion so as to oppose the surface of the semiconductor wafer, and a cleaning liquid discharge locker provided in the nozzle portion. The cleaning liquid is sucked from the suction port provided in the nozzle part while being discharged onto the surface of the wafer, and the band-shaped region along the diameter of the semiconductor wafer is cleaned. By following rotation resist pattern forming method characterized by comprising the steps of cleaning the band-like region in the same manner as in the step at each rotational position is carried out. In the resist pattern forming method, the cleaning liquid may be discharged while the wafer is continuously rotated.

[0018] In another invention, a coating unit that coats a resist on the surface of a semiconductor wafer, and development in which a developer is supplied to the semiconductor wafer that has been subjected to immersion exposure by forming a liquid layer on the surface and developed. And a cleaning unit for cleaning the semiconductor wafer after immersion exposure and before development. The cleaning unit includes a wafer holding unit for holding the semiconductor wafer horizontally, and the wafer holding unit on the vertical axis. A rotation mechanism for rotating the device around, a U-shaped portion formed so as to surround a peripheral portion of the semiconductor wafer held by the wafer holding portion, and the U-shaped portion An upper cleaning liquid discharge port and a lower cleaning liquid discharge port for discharging the cleaning liquid from the inside of the upper surface portion and the lower surface portion of the semiconductor wafer to the peripheral surfaces on both sides of the semiconductor wafer, respectively, When the central portion side of the semiconductor wafer as viewed from the lower cleaning liquid discharge port is the front, the lower suction port surrounding the lower cleaning liquid discharge port from at least the front side and the three sides, and the side surface portion of the U-shaped portion. A side suction port for sucking the cleaning liquid, and a moving mechanism for moving the U-shaped portion between a cleaning position surrounding the peripheral edge of the semiconductor wafer and a retracted position retracted from the cleaning position And characterized by comprising

For example, the U-shaped portions may be provided so as to face each other in the diameter direction of the semiconductor wafer. Further, the lower cleaning liquid discharge port is formed as an elongated discharge port in which the inner force of the semiconductor wafer extends outward, and the lower suction port is a part extending along the discharge port on both sides of the lower cleaning liquid discharge port. May be provided.

[0020] Using the coating and developing apparatus, for example, after applying a resist on the surface of a semiconductor wafer, a liquid layer is formed on the surface of the semiconductor wafer and subjected to immersion exposure, and then the image liquid is applied to the surface of the wafer. According to the resist pattern forming method for supplying and developing, the semiconductor wafer includes a cleaning process for cleaning after immersion exposure and before developing, and the cleaning process is performed horizontally on the wafer holder. Holding the wafer, and then positioning the U-shaped portion relatively so as to surround the peripheral edge of the semiconductor wafer held by the wafer holding portion. A step of discharging the cleaning liquid from the provided upper cleaning liquid discharge port and the lower cleaning liquid discharge port to the peripheral edges of the both surfaces of the semiconductor wafer, a suction port surrounding the lower cleaning liquid discharge port, and a side surface portion of the U-shaped portion From the suction port provided in A step of sucking the cleaning solution while the step of discharging the cleaning solution is being performed, and a step of rotating the wafer holding unit to clean the peripheral portion of the entire circumference of the semiconductor wafer. A resist pattern forming method including the above is performed. In the resist pattern forming method, the cleaning liquid may be discharged while continuously rotating the wafer, not limited to rotating the wafer intermittently.

In another invention, a coating unit for applying a resist to the surface of a semiconductor wafer, and a developer is supplied to the semiconductor wafer that has been subjected to immersion exposure by forming a liquid layer on the surface and developed. And a cleaning unit for cleaning the semiconductor wafer after immersion exposure and before development. The cleaning unit includes a wafer holding unit for holding the semiconductor wafer horizontally, and a wafer holding unit. A cleaning liquid discharge port that is formed to face the surface of the held semiconductor wafer and has a length substantially equivalent to the diameter of the semiconductor wafer, and the cleaning liquid discharged from the cleaning liquid discharge port to the surface of the semiconductor wafer is sucked. Therefore, the wafer holding unit is disposed relative to the nozzle unit, and the nozzle unit is disposed along both sides of the cleaning liquid discharge port and includes a suction port having substantially the same length as the cleaning liquid discharge port. A rotation mechanism that rotates about a vertical axis, a U-shaped portion that is provided at both ends of the nozzle portion and that surrounds the periphery of the semiconductor wafer held by the wafer holding portion, and U-shaped A lower cleaning liquid discharge port that discharges the cleaning liquid from the inside of the lower surface portion of the semiconductor wafer to the peripheral edge of the back surface of the semiconductor wafer, a suction port that is provided on a side surface portion of the U-shaped portion and sucks the cleaning liquid, and the nozzle portion. And a moving mechanism for moving between a cleaning position facing the surface of the semiconductor wafer held by the wafer holding unit and a retreat position where the surface force of the semiconductor wafer is retracted.

[0022] The coating / developing apparatus may include a suction die for sucking a cleaning liquid on a lower surface portion of the U-shaped portion. For example, the suction port is provided so as to surround the lower cleaning liquid discharge port from at least three sides of the front and both sides when the central portion side of the semiconductor wafer is viewed from the front as viewed from the lower cleaning liquid discharge port. Here, the lower cleaning liquid discharge port is formed as an elongated discharge port extending from the inner side to the outer side of the semiconductor wafer, and the lower suction port is a part extending along the discharge port on both sides of the lower cleaning liquid discharge port. With, you can.

[0023] Further, for example, after applying a resist on the surface of a semiconductor wafer using the coating and developing apparatus, a liquid layer is formed on the surface of the semiconductor wafer, and immersion exposure is performed, and then development is performed on the surface of the wafer. According to a resist pattern forming method for supplying and developing a liquid, the semiconductor wafer includes a cleaning process for cleaning after immersion exposure and before developing, and the cleaning process includes a wafer holding unit. And horizontally positioning the nozzle portion so that the nozzle portion faces the semiconductor wafer and the U-shaped portions provided at both ends of the nozzle portion surround the peripheral portion of the semiconductor wafer. And a cleaning liquid discharge port force provided in the nozzle portion, while discharging the cleaning liquid onto the surface of the semiconductor wafer. A step of sucking the cleaning liquid from a suction port provided in the groove portion to clean the band-shaped region along the diameter of the semiconductor wafer, and a cleaning liquid from the inside of the lower surface portion of the U-shaped portion to the peripheral edge of the back surface of the semiconductor wafer. A suction loca provided on the side surface of the U-shaped portion while discharging the cleaning liquid, and subsequently rotating the wafer holding portion sequentially to form a belt-like region at each rotational position and the back surface periphery of the semiconductor wafer. And a step of washing the portion in the same manner as in the above step. In the resist pattern forming method, the cleaning liquid may be discharged while the wafer is continuously rotated, without being limited to rotating the wafer sequentially and intermittently.

Further, in each of the coating and developing devices described above, a rotating mechanism is provided so as to intermittently rotate the wafer holding unit in order to sequentially wash, for example, the band-shaped region along the diameter of the semiconductor wafer by the nozzle unit. It may be controlled. In this case, the cleaning liquid may be discharged from the cleaning liquid discharge port in the process of sequentially rotating the wafer intermittently. However, the cleaning liquid may be discharged from the cleaning liquid discharge port without continuously rotating the wafer. Furthermore, each of the coating and developing devices described above is configured to reciprocate for reciprocally moving the nozzle portion relative to the wafer holding portion in the tangential direction of the semiconductor wafer when the cleaning solution is discharged from the cleaning solution discharge locuser. An operation mechanism may be provided. Here, the moving mechanism may also serve as the reciprocating mechanism.

Furthermore, the coating and developing apparatus described above includes, for example, a processing block including the coating unit and the developing unit, and an interface block interposed between the processing block and an exposure machine that performs immersion exposure on the semiconductor wafer. The cleaning unit may be provided in an interface block.

[0026] Further, each of the coating and developing devices described above includes an interface interposed between a processing block including the coating unit and the developing unit, and an exposure machine that performs immersion exposure on the processing block and the semiconductor wafer. The cleaning unit may be provided in an interface block.

[0027] The resist pattern forming method includes a step of reciprocating the nozzle portion relative to the wafer holding portion in the tangential direction of the semiconductor wafer when the cleaning solution is discharged from the cleaning solution discharge port. May be included. Furthermore, the resist pattern type described above The forming method may include a step of heating the semiconductor wafer after immersion exposure and before development, and the cleaning step may be performed before the step of heating.

[0028] According to another invention, the above-described cleaning unit is provided in an exposure apparatus that performs immersion exposure by forming a liquid layer on the surface of a semiconductor wafer coated with a resist.

[0029] Still another invention is characterized in that the cleaning device comprises the above-described cleaning unit.

The invention's effect

[0030] According to the present invention, since the wafer surface is cleaned by the cleaning unit after the resist coating and before the immersion exposure, the particles adhering to the wafer surface during the immersion exposure. Therefore, it is possible to avoid problems caused by moving on each liquid exposure layer on the liquid layer, and the resist pattern can be accurately transferred. Then, the cleaning liquid is sucked out from the cleaning liquid discharge port with a length corresponding to the approximate diameter of the wafer while the cleaning liquid is also sucked into the wafer surface. There is no. Therefore, in the cleaning unit, it is not necessary to provide a cup body for collecting the cleaning liquid around the wafer holding portion, so that the unit can be saved in space, and as a result, enlargement of the coating and developing apparatus can be avoided.

[0031] According to another invention, the periphery of the wafer is cleaned after immersion exposure, and after immersion exposure, droplets remain on the periphery of the wafer and particles are likely to adhere. By cleaning the peripheral edge of the wafer, particle contamination in the process after immersion exposure can be prevented. Then, the peripheral portion of the wafer is sandwiched by the U-shaped portion formed so as to surround the peripheral portion of the wafer, the cleaning liquid is discharged from the upper surface portion of the U-shaped portion to the peripheral portion of the wafer and sucked from the side surface portion, The cleaning liquid is discharged from the lower cleaning liquid discharge port on the lower surface of the U-shaped part to the back side of the peripheral edge of the wafer, and is sucked by the suction port that surrounds the discharge port from three sides. The shape-type force will not spill. Therefore, it is not necessary to provide a cup body for collecting the cleaning liquid around the wafer holding unit, so that the space for the cleaning unit can be saved, and as a result, enlargement of the coating and developing apparatus can be avoided.

[0032] According to still another invention, since the peripheral portion and the surface of the wafer are cleaned by the cleaning unit after the immersion exposure, the dissolved product remains on the surface of the wafer after the immersion exposure. However, it can be removed by the cleaning unit, and the particle contamination in the process after immersion exposure can be prevented. In the cleaning unit, as described above, there is no possibility that the cleaning liquid spills due to the surface force of the wafer, and the U-shaped portion formed so as to surround the peripheral edge of the wafer is used to discharge the cleaning liquid. Since suction is performed, there is no risk of the spilling of the U-shaped force cleaning solution, and an increase in the size of the coating and developing device can be avoided.

Furthermore, according to the exposure apparatus of the present invention, since the cleaning unit described above is provided, wafers before immersion exposure and after Z or immersion exposure can be cleaned, and the exposure apparatus can be increased in size. Can be avoided.

[0034] Since the cleaning apparatus of the present invention uses the above-described cleaning unit, it can be small and have a simple configuration.

Brief Description of Drawings

FIG. 1 is a plan view showing a coating and developing apparatus according to an embodiment of the present invention.

FIG. 2 is an overall perspective view showing a coating and developing apparatus according to an embodiment of the present invention.

FIG. 3 is a perspective view showing an interface portion of the coating and developing apparatus.

FIG. 4 is a perspective view showing a nozzle portion constituting a cleaning unit incorporated in the coating and developing apparatus.

FIG. 5 is a bottom view showing an example of a top plate in the nozzle portion.

FIG. 6 is a longitudinal sectional view of the nozzle part.

FIG. 7 is a cross-sectional plan view of a U-shaped part in the nozzle part.

FIG. 8 is an explanatory view showing the dynamics of the nozzle part and the wafer before cleaning.

FIG. 9 is a longitudinal sectional view of the nozzle part during cleaning.

FIG. 10 is a side view of the nozzle portion during cleaning.

FIG. 11 is an explanatory diagram showing the dynamics of the nozzle part and the wafer after completion of cleaning.

FIG. 12 is an explanatory view showing a cleaning region of a U-shaped part in the nozzle part.

FIG. 13 is a perspective view showing a cleaning unit of a resist pattern forming apparatus according to another embodiment of the present invention. FIG. 14 is a perspective view showing a cleaning unit of a resist pattern forming apparatus according to another embodiment of the present invention.

FIG. 15 is an explanatory view showing exposure means for immersion exposure of a wafer.

FIG. 16 is an explanatory view showing a state in which the wafer surface is subjected to immersion exposure by the exposure means. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, an example of the entire configuration of a resist pattern forming apparatus including a cleaning unit for cleaning a wafer after applying a resist to the wafer and before immersion exposure according to the present invention will be described with reference to FIGS. explain. FIG. 1 is a plan view showing a resist pattern forming apparatus in which a coating / developing apparatus including a wafer cleaning unit according to an embodiment of the present invention is connected to an exposure apparatus that performs immersion exposure, and FIG. It is the same perspective view. In the figure, B1 is a carrier mounting portion for loading and unloading the carrier 2 having a wafer W force, eg, 13 wafers, and a carrier station 20 having a mounting portion 20a on which a plurality of carriers 2 can be placed side by side. An opening / closing part 21 provided on the front wall as viewed from the carrier station 20 and a delivery means A1 for taking out the wafer W from the carrier 2 through the opening / closing part 21 are provided.

[0037] A processing unit (processing block) B 2 surrounded by a housing 22 is connected to the back side of the carrier mounting unit B1, and the front side force is also sequentially heated and cooled in this processing unit B2. The main transfer means A2 and A3 that deliver wafers W between each of the three shelf units Ul, U2, U3 and the liquid processing units U4, U5 are arranged alternately. And That is, the shelf units Ul, U2, U3 and the main transfer means A2, A3 are arranged in a line in the front-rear direction when viewed from the carrier mounting part B1, and an opening for wafer transfer (not shown) is provided at each connection site. Thus, the wafer W can freely move in the processing block B2 from the shelf unit U1 on one end side to the shelf unit U3 on the other end side. The main transport means A2 and A3 are arranged on one side of the shelf units Ul, U2 and U3 arranged in a line in the front and rear direction as viewed from the carrier mounting part B1, and on one side of the right side liquid processing units U4 and U5, which will be described later, for example. It is placed in a space surrounded by a partition wall 23 composed of a part and a back part forming one side on the left side. In the figure, reference numeral 24 denotes a temperature / humidity adjustment unit equipped with a temperature control device for the treatment liquid used in each unit, a duct for temperature / humidity adjustment, and the like.

[0038] The shelf units Ul, U2, and U3 are pre-treatments for processing performed in the liquid processing units U4 and U5. Various units for processing and post-processing are stacked in multiple stages, for example, 10 stages, and the combination is a heating unit (PABX not shown) that heats the wafer W (beta), and cools the wafer W A cooling unit and the like are included. In addition, as shown in Fig. 2, for example, the liquid processing units U4 and U5 are provided with an antireflection film coating unit (BARC) 26, a resist coating unit (COT) 27, and a wafer W on the chemical solution storage section such as resist and developer. The development unit (DEV) 28 and the like for supplying a developing solution to the developing process are stacked in a plurality of stages, for example, five stages.

[0039] An exposure unit B4 is connected to an inner side of the shelf unit U3 in the processing unit B2 via an interface unit (interface block) B3. Specifically, as shown in FIG. 3, the interface unit B3 is composed of a first transfer chamber 3A and a second transfer chamber 3B that are provided between the processing unit B2 and the exposure unit B4. A first wafer transfer unit 31 and a second wafer transfer unit 32 are provided, respectively. The first wafer transfer unit 31 includes an arm 31A that can move up and down, rotate about the lead straight axis, and move forward and backward. The second wafer transfer section 32 includes an arm 32A that can be moved up and down and rotated about a vertical axis.

[0040] Furthermore, the first transfer chamber 3A has a transfer unit (TRS3) 37, each having a cooling plate, for example, on the right side when viewed from the carrier mounting unit B1 side with the first wafer transfer unit 31 in between. Two high-accuracy temperature control units (CPL2) 39 and a heating / cooling unit (PEB) 38 for post-exposure beta (PEB) processing of a wafer W that has been subjected to immersion exposure are provided, for example, stacked one above the other. On the other hand, two buffer cassettes (SBU) 34 and 35 for temporarily storing a plurality of, for example, 13 wafers W are provided on the left side, for example, continuously in the vertical direction.

[0041] Further, in the second transfer chamber 3B, a stage 4 is provided on the left side of the central portion as a wafer holding portion related to the cleaning unit as viewed from the carrier placement portion B1 side. The cleaning queue refers to a group of components that contribute to the cleaning process of the wafer W. In this embodiment, all the components are provided in the second transfer chamber 3B. The stage 4 is provided on a drive mechanism 41 including a rotation mechanism installed in the lower part of the second transfer chamber 3B via a shaft portion 42 standing in the vertical direction. Stage 4 is a vacuum chucking force that sucks and attracts the center of the back side of Ueno and W, and holds the Ueno and W by the drive mechanism 41. It is configured to rotate around the vertical axis. This stage 4 also serves as a delivery stage for delivering the wafer and W from the arm 40A on the developing and developing apparatus side from the arm 40 on the exposure section B4 side.

[0042] A nozzle unit 5 relating to the cleaning unit is provided further to the left of the stage 4 (Y direction in Fig. 3) when viewed from the carrier mounting unit B1 side. The nozzle portion 5 includes a top plate 51 and U-shaped portions 52 and 52 provided at both ends of the top plate 51, respectively, and the top plate 51 is directed toward the stage 4 in a horizontal posture. It is configured to be horizontally movable in a direction orthogonal to the longitudinal direction of 51.

[0043] Note that the arm 40 on the exposure unit B4 side is configured to be movable up and down, rotatable about a vertical axis, and movable back and forth.

[0044] Next, the nozzle portion 5 constituting a part of the cleaning unit and its peripheral portion will be described with reference to Figs. As shown in FIG. 4, the top plate 51 of the nozzle unit 5 has a length in the longitudinal direction longer than the diameter of the wafer W, and is configured as a belt-like plate.

FIG. 5 is a view of the top plate 51 as viewed from the lower surface, and a plurality of discharge holes 53 are provided linearly along the longitudinal direction at the center of the top plate 51. The length between both ends of these discharge holes 53 group is set to be substantially the same as the diameter of wafer W, and the diameter of each of these discharge holes 53 is more preferably O.lm m to 3 mm. Is 0.5 to lmm. In this example, the cleaning liquid discharge port 54 is formed by a large number of the 53 discharge holes 53. The cleaning liquid discharge port 54 may be a slit having a length substantially the same as the diameter of the wafer W.

On both sides of the cleaning liquid discharge port 54, suction ports 55 and 56 having a length substantially equal to the length of the cleaning liquid discharge port 54 are formed in a slit shape along the cleaning liquid discharge port 54, respectively. The width of the suction ports 55 and 56 is preferably 0.05 mm to 1.0 mm, more preferably 5.0 to 10.0 mm. The distance between the cleaning liquid discharge port 54 and the suction ports 55 and 56 is preferably 2.0 to 20.0 mm, more preferably 5.0 to LO.Omm.

FIG. 6 is a longitudinal sectional view of the nozzle portion 5 shown in FIG. 4 as seen by cutting the bottom surface of the top plate 51 and the U-shaped portion 52. As shown in FIG. 6, the cleaning liquid discharge port 54 communicates with the cleaning liquid supply pipe 54a at the center in the longitudinal direction of the top panel 51 via a passage in the top panel 51. The cleaning liquid supply pipe 54a is connected to the cleaning liquid supply pipe 54a via the valve 54b. It is connected to the cleaning liquid supply source 54c. The suction ports 55 and 56 are The suction pipes 55a and 56a located on both sides of the cleaning liquid supply pipe 54a are connected to the cleaning liquid supply pipe 54a through a passage in the plate 51. Connected to the suction means 55c. In Fig. 6, each passage in the top plate 51 looks like one (a total of three), but it actually extends in the length direction of the top plate 51 along the way, and the cleaning liquid discharge port 54, suction port It is formed as a space communicating with 55 or suction port 56.

[0047] Both ends of the top plate 51 can be roughly folded downward at a right angle, and the lower end of the top plate 51 is folded inward at a right angle so that the inner side of the folded portion is slightly inside. If this is called the top plate 51, this nozzle portion 5 can be referred to as a structure in which U-shaped portions 52, 52 are provided at both ends of the top plate 51. Proceed.

FIG. 7 is a transverse plan view showing the U-shaped part 52. The portions of the U-shaped portion 52 that face each other up and down are referred to as the upper surface portion and the lower surface portion, respectively, and the lower surface portion denoted by reference numeral 60 when the central portion side of the wafer W as viewed from the U-shaped portion 52 is the front side for convenience. A slit-like cleaning liquid discharge port 61 having a length of about 10 mm, for example, extending in the front-rear direction is formed at the center in the left-right direction. Note that the upper surface portion corresponds to both end portions of the top plate 51, and is not labeled. The rear end side of the cleaning liquid discharge port 61 is located directly below the peripheral edge of the wafer W, and the peripheral edge of the back surface of the wafer W can be cleaned by the cleaning liquid discharge port 61. A suction port 62 is provided around the cleaning liquid discharge port 61 so as to surround the front and both sides of the cleaning liquid outlet 61 in a U shape. The suction port 62 is connected to the cleaning liquid discharge port 61 on both sides of the cleaning liquid discharge port 61. It is formed so as to extend to approximately the same length along.

[0049] The cleaning liquid discharge port 61 corresponds to the lower surface cleaning liquid discharge port, and may have a plurality of discharge holes arranged in the length direction without being slit-shaped. The suction port 62 sucks the cleaning liquid discharged from the cleaning liquid discharge port 61 to the back side of the wafer W. If the suction is surely performed even if it is not a continuous U-shaped suction port, It may be a discontinuous, for example, U-shaped suction port. Here, the width of the slit of the cleaning liquid discharge port 61 is preferably 0.05 to 1.0 mm, and more preferably 0.1 to 0.5 mm. The distance between the second cleaning liquid discharge port 61 and the suction port 62 is preferably 2.0 to 20.0 mm, more preferably 5.0 to 10.0 mm. It is.

[0050] A connection unit 63 is joined to the lower surface portion 60 of each U-shaped portion 52, and a cleaning liquid supply pipe 64 and a suction pipe 65 are connected to the connection unit 63. The cleaning liquid discharge port 61 in the lower surface portion 60 communicates with the cleaning liquid supply pipe 64 through a passage formed in the connection unit 63, and the suction port 62 is a passage different from the passage formed in the connection unit 63. It communicates with the suction pipe 65 via the. The proximal ends of the cleaning liquid supply pipe 64 and the suction pipe 65 are connected to the cleaning liquid supply source 54c and the suction means 55c shown in FIG. 6, respectively.

[0051] Further, a suction port 66 (see FIG. 6) for sucking the cleaning liquid on the upper side and the lower side of the wafer W is formed on the side surface portion of each U-shaped portion 52. The suction port 66 is a suction pipe 67. To the suction means 55c shown in FIG.

[0052] Returning to FIG. 4, the nozzle unit 5 has a force such as a ball screw mechanism via the arm 57. The moving mechanism 58 also cleans the wafer W by the moving mechanism 58, and does not obstruct the delivery of the wafer W in the stage 4. It is now possible to move horizontally between the retracted position.

[0053] The operation of the above-described embodiment will be described focusing on the process of cleaning Ueno and W. Now, assuming that exposure exposure is performed on the wafer W as described in FIG. 15 in the background art section in the exposure unit B4, this wafer W is transferred by the transfer unit 40 (see FIG. 1). (Fig. 8 (a)), and placed on stage 4 so that its center and the center of wafer W coincide. The stage 4 sucks and sucks the center of the back surface of the wafer W, so that the wafer W is held horizontally on the stage 4. After the arm of the transfer unit 40 is retracted (FIG. 8 (b)), the nozzle unit 5 is transferred by the moving mechanism 58 to the cleaning position, that is, the UNO, W It is conveyed to the position where the peripheral edge of is inserted through the space. In this cleaning position, the U-shaped portion 52 surrounds the periphery of the wafer and W, and the cleaning liquid discharge port 54 formed linearly on the top plate 51 matches the diameter of the wafer W. (Fig. 8 (c) and Fig. 4).

Next, a cleaning liquid such as pure water is supplied from the cleaning liquid discharge port 54 of the top plate 51 to the surface of the wafer W, and the suction ports 55 and 56 on both sides of the cleaning liquid discharge port 54 are in a suction state. Also in the U-shaped part 52, the peripheral edge of the wafer W is back from the cleaning liquid discharge port 61 on the lower surface part 60. While pure water is supplied to the surface side, the suction port 62 on the lower surface portion and the suction port 66 on the side surface portion are in the suction state, and thus the cleaning of the surface and the peripheral portion of the wafer W is started. Note that the suction timing is slightly before the supply of pure water.

[0055] The state of cleaning on the surface of the wafer W will be described. FIG. 9 is a schematic longitudinal front view of the top plate 51 cut along the width direction when the wafer W is cleaned. Pure water is discharged from the cleaning liquid discharge port 54 onto the surface of Weno and W. The discharged pure water diffuses to both sides of the cleaning liquid discharge port 54 while filling between the surface of the wafer W and the lower surface of the top plate 51, for example. Here, since suction is performed from the suction ports 55 and 56 on both sides, pure water is sucked into the suction ports 55 and 56 and does not spill from the wafer W.

Further, the state of cleaning at the peripheral portion of the wafer W will be described. As shown in FIG. 10, the cleaning liquid is applied to the back surface of the peripheral portion of the wafer W from the slit-like lower cleaning liquid discharge port 61 in the U-shaped portion 52. Be sprayed. At this time, since suction is performed from the suction port 66 on the side surface of the U-shaped portion 52, a part of the cleaning liquid sprayed on the back surface is sucked into the suction port 66 along the suction flow. A part of the cleaning liquid sprayed on the back surface falls to the lower side, but a suction port provided in a U shape on the front side of the lower cleaning liquid discharge port 61 (the center side of the wafer W) and on both sides. Inhaled from 62. Further, the cleaning liquid sprayed and scattered from the edge of the cleaning liquid discharge port 54 on the top plate 51 side to the peripheral edge of the wafer W is sucked from the suction port 66 on the side surface portion. For this reason, the back of the peripheral portion of Ueno and W is cleaned without the cleaning liquid spilling from the U-shaped portion 52.

In this cleaning liquid process, the nozzle unit 5 is reciprocated by the moving mechanism 58 horizontally along the tangential direction of the wafer W as shown in FIG. 11 (a). It is done while being moved. FIG. 12 shows an example of the positional relationship between the peripheral edge of the wafer W and the lower cleaning liquid discharge port 61 and the suction port 62 in the U-shaped portion 52 in this reciprocating movement, and corresponds to this reciprocating movement range. In FIG. 12, the band-like region indicated by the dotted line 200 is cleaned.

At this time, the end portions of the cleaning liquid discharge port 54 and the lower cleaning liquid discharge port 61 of the top plate 51 are disengaged from the peripheral edge of the wafer W, and the cleaning liquid from these discharge ports 54 and 61 is respectively a lower surface portion of the U-shaped portion 52. And The air is blown out toward the top surface, but is sucked in from the suction port 66 on the side surface portion and the suction port 62 on the bottom surface portion 60, and does not spill from the nozzle portion 5. The central angle Θ of the wafer W corresponding to the movement region of the cleaning liquid discharge ports 54 and 61 when the nozzle unit 5 reciprocates is set to 30 degrees, for example, but is not limited to this angle. As for the reciprocating movement, the reciprocating movement is performed once so as to cover one side of the belt-like region, but may be performed reciprocating twice or more.

[0059] When the belt-like region on the wafer W is cleaned as described above, the discharge of the cleaning liquid is stopped, and the stage 4 is moved by the central angle Θ of the wafer W corresponding to the moving region of the cleaning liquid discharge ports 54 and 61. Then, the wafer W is rotated (FIG. 11 (b)), and then the cleaning liquid is discharged to clean the wafer W, specifically the band-like region. Then, the wafer W is sequentially rotated by an angle Θ, and cleaning is performed at each position. When cleaning at the final angle position (Fig. 11 (c)) is completed, the nozzle unit 5 is retracted from the wafer W (Fig. 11). (d)) The arm of the transfer unit 32 of the interface unit B3 receives the wafer W from the stage 4 (FIG. 11 (e)) and transfers it to the unit for performing PEB in the interface unit B3.

[0060] In the drawing, the force widely described between the wafer W and the top plate 51 for the sake of convenience is actually about 0.5 to 5 mm during this period, and the cleaning liquid supplied to the surface of the wafer W is applied to the surface. All the liquid is sucked from the suction ports 55 and 56, and the cleaning liquid on the back side of the peripheral portion of the wafer W is also sucked from the suction port 66 on the side surface of the U-shaped portion 52. It does not remain. In the present invention, a drying mechanism for spraying a drying gas onto the surface of the wafer W may be provided integrally with the nozzle unit 5 or separately. As the drying mechanism, for example, a configuration in which a drying gas supply port is provided along the longitudinal direction on both sides of the suction ports 55 and 56 of the top plate 51 of the nozzle unit 5 can be employed.

[0061] According to the above-described embodiment, the periphery of the wafer is cleaned after immersion exposure. After immersion exposure, droplets remain on the periphery of the wafer so that particles are likely to adhere. However, by cleaning the periphery of the wafer, it is possible to prevent particle contamination in the process after immersion exposure. Further, even if a dissolved product generated during immersion exposure remains on the surface of the wafer, it can be removed, and particle contamination in the process after immersion exposure can be prevented. The wafer W after immersion exposure is cleaned before development. However, in a system that develops the wafer W without heating, for example, it is necessary to carry out it before development.

[0062] Since the cleaning liquid is sucked from the suction ports 55 and 56 arranged on both sides while discharging the cleaning liquid from the cleaning liquid discharge port 54 having a length corresponding to the approximate diameter of the wafer W to the surface of the wafer W, The cleaning liquid does not spill over the surface force of the wafer. Further, as already described in detail, since the cleaning liquid discharged to the peripheral edge of wafer W is also sucked from the suction ports 62 and 66 of the U-shaped part 52, the cleaning liquid does not spill from the U-shaped part 52. For this reason, it is not necessary to install a cup body for collecting the cleaning liquid around the space, so that space can be saved. Therefore, even if a coating and developing apparatus incorporating the cleaning unit is used, an increase in size can be prevented.

[0063] Further, as in the above-described embodiment, it is preferable in that the nozzle part 5 is reciprocated, whereby it is possible to perform reliable cleaning without the possibility of generating an unwashed part, but the nozzle part 5 is reciprocated. For example, the wafer W may be rotated intermittently at a fine angular pitch without being moved, and the cleaning liquid may be discharged at each angular position, or the wafer W may be rotated at a low rotational speed such that the cleaning liquid does not spill. Make sure that the cleaning solution is discharged while the is rotating continuously.

[0064] In the U-shaped portion 52, the distance between the lower surface portion 60 and the wafer W may be reduced so that the gap between them is filled with the cleaning liquid. A configuration may be adopted in which a space is formed between the two and the cleaning liquid is scattered. In these cases, it is important to arrange the suction port so that the cleaning solution can be sucked without dropping. In view of this point force, if the three sides of the lower cleaning liquid discharge port 61 are surrounded by the suction port 62 as in the embodiment and the suction port 66 is provided on the side surface, the discharge is performed as detailed in the explanation of the operation. This is a desirable configuration because the cleaning liquid discharged from the outlet 61 can be reliably sucked.

[0065] Further, focusing on the fact that particles are likely to adhere to the peripheral portion of the wafer W after immersion exposure, a cleaning unit that cleans only the peripheral portion of the wafer W without cleaning the surface of the wafer W is provided. It may be used. In this case, for example, as shown in FIG. 14, U-shaped portions 71 and 72 having the same structure facing each other can be horizontally moved by moving mechanisms 73 and 74, respectively. Figure 4 shows the lower and side faces of the U-shaped parts 71 and 72. The upper surface portion may have the same structure as the lower surface portion, for example, or a suction port provided only with a cleaning liquid discharge port for discharging the cleaning liquid to the surface of the peripheral portion of Ueno and W. It is good also as a structure which does not provide. In such a configuration, the cleaning liquid discharge port on the upper surface side corresponds to the upper cleaning liquid discharge port in the present invention.

Furthermore, in the present invention, for example, a cleaning unit for cleaning the wafer W before immersion exposure may be provided in the interface unit B3. In this case, the nozzle portion 5 having the same structure as that shown in FIG. 4 may be used to have the same configuration as in the previous embodiment, but the surface of the wafer W is particularly cleaned before immersion exposure. Since it is important, the U-shaped portion 52 may be removed from the nozzle portion 5 shown in FIG. In this case, the force due to the suction force of the suction port, for example, rotating the wafer W continuously or intermittently without reciprocating the nozzle portion 5 from the viewpoint of reliably suctioning the cleaning liquid. Is preferred. Alternatively, in the nozzle unit 5 shown in FIG. 4, the cleaning liquid outlet 61 and the suction port 62 on the lower surface side of the U-shaped part 52 may be excluded.

FIG. 13 shows an example in which a cleaning unit for cleaning the wafer W before the immersion exposure is provided in the previous embodiment shown in FIG. 1 and FIG. The This cleaning unit is also powered by the stage 81, the drive mechanism 82, the nozzle part 83 that does not have a U-shaped part, and the stage 81 moves from the arm of the transfer part 32 on the interface B3 side to the transfer part 40 of the exposure part B4 side. It also serves as a delivery stage where wafers W are delivered to the chamber. The nozzle portion 83 is moved between a cleaning position located on the wafer W and a retracted position retracted from the wafer W by a moving mechanism (not shown).

[0068] In the processing section B2 of the coating and developing apparatus, liquid cleaning, heating, and cooling system processing units are arranged as densely as possible to reduce the size and improve throughput. It is better to install it at the interface unit B3 than at the processing unit B2.

[0069] The cleaning unit described so far is an invention of the cleaning device itself, and in this case, there is an effect that a small and simple structure can be obtained. Further, such a cleaning unit is provided on the exposure unit B4 side without being provided in the coating / developing apparatus, and is an invention of an exposure apparatus provided with a cleaning unit for cleaning the wafer W before immersion exposure and Z or after immersion exposure. Also In this case, the above-described effects can be obtained.

Claims

The scope of the claims

[1] An application unit for applying a resist to the surface of a semiconductor wafer;

A developing unit for forming a liquid layer on the surface and supplying the developer to the semiconductor wafer after immersion exposure;

And a cleaning unit that cleans the semiconductor wafer after applying resist and before immersion exposure.

The washing unit is

A wafer holding unit for holding a semiconductor wafer horizontally;

It is formed so as to face the surface of the semiconductor wafer held by the wafer holding unit, and is discharged to the surface of the semiconductor wafer from the cleaning liquid discharge port having a length substantially corresponding to the diameter of the semiconductor wafer. A nozzle portion that is disposed along both sides of the cleaning liquid discharge port for sucking the cleaning liquid, and includes a suction port having a length substantially the same as the cleaning liquid discharge port;

A rotation mechanism for rotating the wafer holding portion around the vertical axis relative to the nozzle portion;

A moving mechanism for moving the nozzle portion between a cleaning position facing the surface of the semiconductor wafer held by the wafer holding portion and a retreating position where the surface force of the semiconductor wafer is retreated. Development device.

[2] The rotation mechanism is controlled to intermittently rotate the wafer holding unit in order to sequentially wash the band-like region along the diameter of the semiconductor wafer by the nozzle unit.

The coating and developing apparatus according to claim 1, wherein:

[3] The cleaning liquid discharge locusr also includes a reciprocating mechanism for reciprocating the nozzle part relative to the wafer holding part in the tangential direction of the semiconductor wafer when the cleaning liquid is being discharged.

The coating and developing apparatus according to claim 1, wherein:

[4] A processing block including the coating unit and the developing unit, and an interface block interposed between the processing block and an exposure machine that performs immersion exposure on the semiconductor wafer, and the cleaning unit includes an interface Provided in the block The coating and developing apparatus according to claim 1, wherein:

[5] An exposure apparatus that forms a liquid layer on the surface of a semiconductor wafer coated with a resist and performs immersion exposure.

A cleaning unit according to claim 1 is provided.

An exposure apparatus characterized by that.

[6] A cleaning apparatus comprising the cleaning unit according to claim 1.

[7] An application unit for applying a resist to the surface of the semiconductor wafer;

A cleaning unit for cleaning a semiconductor wafer after immersion exposure and before development,

The washing unit is

A wafer holding unit for holding a semiconductor wafer horizontally;

A rotation mechanism for rotating the wafer holder around the straight axis;

A U-shaped part formed so as to surround a peripheral part of the semiconductor wafer held by the wafer holding part;

An upper cleaning liquid discharge port and a lower cleaning liquid discharge port for discharging a cleaning liquid from the inside of the upper surface portion and the lower surface portion of the U-shaped portion to both peripheral edges of the semiconductor wafer;

Provided to suck the cleaning liquid to the lower surface portion of the U-shaped portion, and when the central portion side of the semiconductor wafer as viewed from the lower cleaning liquid outlet is the front, the lower cleaning liquid discharge port is at least the front side and A lower suction port surrounded from three sides on both sides,

A side suction port for suctioning a cleaning liquid, a cleaning position surrounding the peripheral edge of the semiconductor wafer, and a retracted position where the U-shaped part is retracted from the cleaning position; A moving mechanism for moving between

A coating and developing apparatus comprising:

8. The coating and developing apparatus according to claim 7, wherein the U-shaped portions are provided so as to face each other in the diameter direction of the semiconductor wafer.

[9] The lower cleaning solution discharge port is a long and narrow discharge port that extends the inner force of the semiconductor wafer to the outside. Formed,

The lower suction port has a portion extending along the discharge port on both sides of the lower cleaning solution discharge port.

The coating and developing apparatus according to claim 7.

[10] The rotation mechanism is controlled to intermittently rotate the wafer holding unit in order to sequentially wash the band-like region along the diameter of the semiconductor wafer by the nozzle unit.

The coating and developing apparatus according to claim 7.

[11] The cleaning liquid discharge locus includes a reciprocating mechanism for reciprocating the nozzle part relative to the wafer holding part in the tangential direction of the semiconductor wafer when the cleaning liquid is being discharged.

The coating and developing apparatus according to claim 7.

[12] A processing block including the coating unit and the developing unit, and an interface block interposed between the processing block and an exposure machine that performs immersion exposure on the semiconductor wafer, and the cleaning unit includes an interface Provided in the block

The coating and developing apparatus according to claim 7.

[13] An exposure apparatus that forms a liquid layer on the surface of a semiconductor wafer coated with a resist and performs immersion exposure.

An exposure apparatus comprising the cleaning unit according to claim 7.

[14] A cleaning apparatus comprising the cleaning unit according to [7].

[15] a coating unit for coating a resist on the surface of a semiconductor wafer;

The washing unit is

A wafer holding unit for holding a semiconductor wafer horizontally;

A cleaning liquid discharge port that is formed to face the surface of the semiconductor wafer held by the wafer holding unit, and has a length corresponding to the approximate diameter of the semiconductor wafer, and a halfway from the cleaning liquid discharge port In order to suck the cleaning liquid discharged on the surface of the conductor wafer I, a nozzle part is disposed along both sides of the cleaning liquid discharge port, and includes a suction port having substantially the same length as the cleaning liquid discharge port. When,

A U-shaped part that is provided at both ends of the nozzle part and is formed so as to surround the peripheral part of the semiconductor wafer held by the wafer holding part;

A lower cleaning liquid discharge port for discharging a cleaning liquid from the inside of the lower surface of the U-shaped part to the peripheral edge of the back surface of the semiconductor wafer;

A suction port for sucking a cleaning liquid provided on a side surface portion of the U-shaped portion; a cleaning position where the nozzle portion faces the surface of the semiconductor wafer held by the wafer holding portion; and a surface force of the semiconductor wafer is retracted And a moving mechanism for moving between the retracted position and the coating / developing apparatus.

[16] Provided in the lower surface portion of the U-shaped portion for sucking the cleaning liquid, and when the central portion side of the semiconductor wafer as viewed from the lower cleaning liquid discharge port is the front, the lower cleaning liquid discharge port is slightly Both have suction ports that surround the front and both sides

16. The coating and developing apparatus according to claim 15, wherein

[17] The lower cleaning liquid discharge port is formed as an elongated discharge port that also extends the inner force of the semiconductor wafer to the outside.

16. The coating and developing apparatus according to claim 15, wherein

[18] The rotation mechanism is controlled to intermittently rotate the wafer holding unit in order to sequentially wash the band-like region along the diameter of the semiconductor wafer by the nozzle unit.

16. The coating and developing apparatus according to claim 15, wherein

[19] The cleaning liquid discharge locus includes a reciprocating mechanism for reciprocating the nozzle part relative to the wafer holding part in the tangential direction of the semiconductor wafer when the cleaning liquid is being discharged. 16. The coating and developing apparatus according to claim 15, wherein

[20] The moving mechanism also serves as the reciprocating mechanism.

20. The coating and developing apparatus according to claim 19,

[21] A processing block including the coating unit and the developing unit, and an interface block interposed between the processing block and an exposure machine that performs immersion exposure on the semiconductor wafer, and the cleaning unit includes an interface Provided in the block

16. The coating and developing apparatus according to claim 15, wherein

[22] An exposure apparatus that forms a liquid layer on the surface of a semiconductor wafer coated with a resist and performs immersion exposure.

An exposure apparatus comprising the cleaning unit according to claim 15.

[23] A cleaning apparatus comprising the cleaning unit according to [15].

[24] After applying a resist on the surface of the semiconductor wafer, forming a liquid layer on the surface of the semiconductor wafer, performing immersion exposure, and then supplying a developing solution to the surface of the wafer to develop a resist pattern In the method

A cleaning process is performed to clean semiconductor wafers after resist coating and before immersion exposure.

The washing step includes

A step of horizontally holding the semiconductor wafer on the wafer holder;

Thereafter, the step of relatively positioning the nozzle portion according to claim 1 so as to face the surface of the semiconductor wafer;

Next, the cleaning liquid is sucked from the suction port provided in the nozzle part while discharging the cleaning liquid to the surface of the semiconductor wafer from the cleaning liquid discharge port provided in the nozzle part. Cleaning the area;

Subsequently, the wafer holding unit is sequentially rotated, and the band-like region at each rotation position is cleaned in the same manner as in the above-described step,

A resist pattern forming method comprising:

[25] The cleaning liquid discharge loca includes a step of reciprocally moving the nozzle part relative to the wafer holding part in the tangential direction of the semiconductor wafer when the cleaning liquid is being discharged. 25. The resist pattern forming method according to claim 24.

[26] The semiconductor wafer includes a step of heating after immersion exposure and before development, and the cleaning step is performed before the step of heating.

25. The resist pattern forming method according to claim 24.

[27] After applying a resist on the surface of the semiconductor wafer, forming a liquid layer on the surface of the semiconductor wafer, performing immersion exposure, and then supplying a developing solution to the surface of the wafer to develop a resist pattern In the method

A cleaning process for cleaning a semiconductor wafer after immersion exposure and before developing is performed.

A step of horizontally holding the semiconductor wafer on the wafer holder;

Next, the step of relatively positioning the U-shaped portion described in claim 2 so as to surround a peripheral portion of the semiconductor wafer held by the wafer holding portion;

Subsequently, a step of discharging the cleaning liquid from the upper cleaning liquid discharge port and the lower cleaning liquid discharge port provided in the U-shaped part to the peripheral edges of the semiconductor wafer, respectively,

A step of sucking the cleaning liquid while the step of discharging the cleaning liquid is performed from the suction port surrounding the lower cleaning liquid discharge port and the suction port provided on the side surface of the U-shaped portion. When,

Rotating the wafer holder to clean the periphery of the entire circumference of the semiconductor wafer;

A resist pattern forming method comprising:

[28] The cleaning liquid discharge locaer includes a step of reciprocally moving the nozzle part relative to the wafer holding part in the tangential direction of the semiconductor wafer when the cleaning liquid is being discharged. The resist pattern formation method as described in any one of.

[29] The semiconductor wafer includes a step of heating after immersion exposure and before development, and the cleaning step is performed before the step of heating.

28. The resist pattern forming method according to claim 27.

[30] After applying a resist to the surface of the semiconductor wafer, a liquid layer is formed on the surface of the semiconductor wafer, immersion exposure is performed, and then a developing solution is supplied to the surface of the wafer to develop the resist pattern. In the formation method,

A step of horizontally holding the semiconductor wafer on the wafer holder;

Next, the step of causing the nozzle portion described in claim 15 to face the semiconductor wafer and relatively positioning the U-shaped portions provided at both ends of the nozzle portion so as to surround the periphery of the semiconductor wafer;

Thereafter, the cleaning liquid is sucked from the suction port provided in the nozzle part while the cleaning liquid is discharged from the cleaning liquid discharge port provided in the nozzle part to the surface of the semiconductor wafer. Cleaning the area;

A step of suctioning the cleaning liquid from the suction side provided on the side surface of the U-shaped part while discharging the cleaning liquid from the inside of the lower surface of the U-shaped part to the peripheral edge of the back surface of the semiconductor wafer; Sequentially cleaning the belt-like region at each rotational position and the peripheral edge of the back surface of the semiconductor wafer in the same manner as described above,

A resist pattern forming method comprising:

[31] The cleaning liquid discharge locaer comprising a step of reciprocally moving the nozzle portion relative to the wafer holding portion in the tangential direction of the semiconductor wafer when the cleaning liquid is being discharged. The resist pattern formation method as described in any one of.

[32] The semiconductor wafer includes a step of heating after immersion exposure and before development, and the cleaning step is performed before the step of heating.

31. The resist pattern forming method according to claim 30, wherein