WO2006023612A3 - Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers - Google Patents

Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers Download PDF

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Publication number
WO2006023612A3
WO2006023612A3 PCT/US2005/029339 US2005029339W WO2006023612A3 WO 2006023612 A3 WO2006023612 A3 WO 2006023612A3 US 2005029339 W US2005029339 W US 2005029339W WO 2006023612 A3 WO2006023612 A3 WO 2006023612A3
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WO
WIPO (PCT)
Prior art keywords
photoresist
wafers
sub
measurement
induced changes
Prior art date
Application number
PCT/US2005/029339
Other languages
French (fr)
Other versions
WO2006023612A2 (en
Inventor
Henry A Hill
Original Assignee
Zetetic Inst
Henry A Hill
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Filing date
Publication date
Application filed by Zetetic Inst, Henry A Hill filed Critical Zetetic Inst
Publication of WO2006023612A2 publication Critical patent/WO2006023612A2/en
Publication of WO2006023612A3 publication Critical patent/WO2006023612A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Abstract

A method of processing a substrate on which a layer of photoresist has been applied, the method involving: exposing the layer of photoresist to patterned radiation to generate exposure-induced changes in the layer of photoresist which form patterns having one or more features; and before developing the exposed photoresist, interferometrically obtaining measurements of the pattern in the exposed layer of photoresist for determining locations of the one or more features of the pattern.
PCT/US2005/029339 2004-08-19 2005-08-18 Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers WO2006023612A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US60299904P 2004-08-19 2004-08-19
US60/602,999 2004-08-19
US61848304P 2004-10-13 2004-10-13
US60/618,483 2004-10-13
US62470704P 2004-11-03 2004-11-03
US60/624,707 2004-11-03

Publications (2)

Publication Number Publication Date
WO2006023612A2 WO2006023612A2 (en) 2006-03-02
WO2006023612A3 true WO2006023612A3 (en) 2006-12-28

Family

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PCT/US2005/029339 WO2006023612A2 (en) 2004-08-19 2005-08-18 Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers

Country Status (3)

Country Link
US (1) US7324216B2 (en)
TW (1) TW200612212A (en)
WO (1) WO2006023612A2 (en)

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Also Published As

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US7324216B2 (en) 2008-01-29
TW200612212A (en) 2006-04-16
US20060050283A1 (en) 2006-03-09
WO2006023612A2 (en) 2006-03-02

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