WO2005123373A3 - Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same - Google Patents

Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same Download PDF

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Publication number
WO2005123373A3
WO2005123373A3 PCT/US2005/020100 US2005020100W WO2005123373A3 WO 2005123373 A3 WO2005123373 A3 WO 2005123373A3 US 2005020100 W US2005020100 W US 2005020100W WO 2005123373 A3 WO2005123373 A3 WO 2005123373A3
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WO
WIPO (PCT)
Prior art keywords
nanostructures
compositions
post
incorporating same
devices
Prior art date
Application number
PCT/US2005/020100
Other languages
French (fr)
Other versions
WO2005123373A2 (en
Inventor
Jeffery A Whiteford
Rhett Brewer
Mihai Buretea
Jian Chen
Chu Karen Cruden
Xiangfeng Duan
William P Freeman
David Heald
Francisco Leon
Chao Liu
Andreas Meisel
Kyu S Min
J Wallace Parce
Erik Scher
Original Assignee
Nanosys Inc
Jeffery A Whiteford
Rhett Brewer
Mihai Buretea
Jian Chen
Chu Karen Cruden
Xiangfeng Duan
William P Freeman
David Heald
Francisco Leon
Chao Liu
Andreas Meisel
Kyu S Min
J Wallace Parce
Erik Scher
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanosys Inc, Jeffery A Whiteford, Rhett Brewer, Mihai Buretea, Jian Chen, Chu Karen Cruden, Xiangfeng Duan, William P Freeman, David Heald, Francisco Leon, Chao Liu, Andreas Meisel, Kyu S Min, J Wallace Parce, Erik Scher filed Critical Nanosys Inc
Priority to KR1020077000514A priority Critical patent/KR101424966B1/en
Priority to JP2007527681A priority patent/JP5253806B2/en
Priority to AU2005254490A priority patent/AU2005254490B2/en
Priority to CN2005800187089A priority patent/CN101426639B/en
Priority to EP05784268.4A priority patent/EP1776225A4/en
Priority to CA002567907A priority patent/CA2567907A1/en
Publication of WO2005123373A2 publication Critical patent/WO2005123373A2/en
Publication of WO2005123373A3 publication Critical patent/WO2005123373A3/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/28—Compounds of silicon
    • C09C1/30—Silicic acid
    • C09C1/3081—Treatment with organo-silicon compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C3/00—Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
    • C09C3/006—Combinations of treatments provided for in groups C09C3/04 - C09C3/12
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C3/00—Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
    • C09C3/06—Treatment with inorganic compounds
    • C09C3/063—Coating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C3/00—Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
    • C09C3/12—Treatment with organosilicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/45—Aggregated particles or particles with an intergrown morphology
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/54—Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2989—Microcapsule with solid core [includes liposome]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
    • Y10T428/2995—Silane, siloxane or silicone coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
    • Y10T428/2996—Glass particles or spheres
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2998—Coated including synthetic resin or polymer

Abstract

Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure and for reversibly modifying nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.
PCT/US2005/020100 2004-06-08 2005-06-07 Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same WO2005123373A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020077000514A KR101424966B1 (en) 2004-06-08 2005-06-07 Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
JP2007527681A JP5253806B2 (en) 2004-06-08 2005-06-07 Post-deposition encapsulation of nanostructures, compositions, devices and systems comprising said nanostructures
AU2005254490A AU2005254490B2 (en) 2004-06-08 2005-06-07 Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
CN2005800187089A CN101426639B (en) 2004-06-08 2005-06-07 Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
EP05784268.4A EP1776225A4 (en) 2004-06-08 2005-06-07 Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
CA002567907A CA2567907A1 (en) 2004-06-08 2005-06-07 Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US57823604P 2004-06-08 2004-06-08
US60/578,236 2004-06-08
US63257004P 2004-11-30 2004-11-30
US60/632,570 2004-11-30

Publications (2)

Publication Number Publication Date
WO2005123373A2 WO2005123373A2 (en) 2005-12-29
WO2005123373A3 true WO2005123373A3 (en) 2009-04-16

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PCT/US2005/020100 WO2005123373A2 (en) 2004-06-08 2005-06-07 Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same

Country Status (8)

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US (2) US7267875B2 (en)
EP (1) EP1776225A4 (en)
JP (1) JP5253806B2 (en)
CN (2) CN102054527B (en)
AU (1) AU2005254490B2 (en)
CA (1) CA2567907A1 (en)
TW (2) TW201341440A (en)
WO (1) WO2005123373A2 (en)

Families Citing this family (195)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4789809B2 (en) * 2004-01-15 2011-10-12 サムスン エレクトロニクス カンパニー リミテッド Matrix doped with nanocrystals
US7645397B2 (en) * 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
US7968273B2 (en) 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7776758B2 (en) 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
CA2567930A1 (en) 2004-06-08 2005-12-22 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
TW201341440A (en) * 2004-06-08 2013-10-16 Sandisk Corp Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
US8563133B2 (en) * 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US8088483B1 (en) * 2004-06-08 2012-01-03 Nanosys, Inc. Process for group 10 metal nanostructure synthesis and compositions made using same
US8089152B2 (en) * 2004-09-16 2012-01-03 Nanosys, Inc. Continuously variable graded artificial dielectrics using nanostructures
US8558311B2 (en) * 2004-09-16 2013-10-15 Nanosys, Inc. Dielectrics using substantially longitudinally oriented insulated conductive wires
US20080157665A1 (en) * 2005-02-25 2008-07-03 Optimax Technology Corporation Optical Thin Films with Nano-Corrugated Surface Topologies by a Simple Coating Method
US20070044295A1 (en) * 2005-05-12 2007-03-01 Nanosys, Inc. Use of nanoparticles in film formation and as solder
JP5424638B2 (en) * 2005-05-27 2014-02-26 ザ・ガバナーズ・オブ・ザ・ユニバーシティー・オブ・アルバータ Process for the preparation of nanocrystalline silicon and independent silicon nanoparticles in SiO2
US9297092B2 (en) 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US8845927B2 (en) 2006-06-02 2014-09-30 Qd Vision, Inc. Functionalized nanoparticles and method
US8718437B2 (en) * 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
KR100678477B1 (en) * 2005-06-15 2007-02-02 삼성전자주식회사 Nanocrystal nonvolatile memory devices and method of fabricating the same
KR20080035685A (en) * 2005-08-19 2008-04-23 나노시스, 인크. Electronic grade metal nanostructures
DK1943016T3 (en) 2005-10-14 2012-10-01 Vive Crop Prot Inc Composite nanoparticles, nanoparticles and processes for their preparation
US20070096083A1 (en) * 2005-10-27 2007-05-03 Intel Corporation Substrate core polymer nanocomposite with nanoparticles and randomly oriented nanotubes and method
US20100068828A1 (en) * 2005-12-08 2010-03-18 Shawn Thomas Method of forming a structure having a giant resistance anisotropy or low-k dielectric
US7449538B2 (en) 2005-12-30 2008-11-11 Hynix Semiconductor Inc. Hard mask composition and method for manufacturing semiconductor device
KR100745745B1 (en) * 2006-02-21 2007-08-02 삼성전기주식회사 Nano-composite material and the maunfacturing method for the same
KR101194839B1 (en) * 2006-02-28 2012-10-25 삼성전자주식회사 Memory device comprising nanocrystals and method for producing the same
US8849087B2 (en) 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
NZ594660A (en) * 2006-03-13 2013-09-27 Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors
US9105776B2 (en) * 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
US8017860B2 (en) * 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
WO2007136350A1 (en) * 2006-05-22 2007-11-29 Nanyang Technological University Organic memory device and method of its manufacture
US9212056B2 (en) 2006-06-02 2015-12-15 Qd Vision, Inc. Nanoparticle including multi-functional ligand and method
WO2008121153A2 (en) * 2006-08-17 2008-10-09 University Of Utah Research Foundation Dendrimers and methods of making and using thereof
JP4509080B2 (en) * 2006-09-28 2010-07-21 信越化学工業株式会社 Silsesquioxane compound mixture, hydrolyzable silane compound, production method thereof, resist composition using the same, pattern formation method, and substrate processing method
JP2008166729A (en) * 2006-12-08 2008-07-17 Canon Anelva Corp Substrate heat treatment apparatus, and semiconductor manufacturing method
US20080150004A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US20080150009A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US8686490B2 (en) * 2006-12-20 2014-04-01 Sandisk Corporation Electron blocking layers for electronic devices
US20080150003A1 (en) * 2006-12-20 2008-06-26 Jian Chen Electron blocking layers for electronic devices
US7847341B2 (en) 2006-12-20 2010-12-07 Nanosys, Inc. Electron blocking layers for electronic devices
US20080246076A1 (en) * 2007-01-03 2008-10-09 Nanosys, Inc. Methods for nanopatterning and production of nanostructures
US20090136785A1 (en) * 2007-01-03 2009-05-28 Nanosys, Inc. Methods for nanopatterning and production of magnetic nanostructures
US8836212B2 (en) * 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
WO2008140831A2 (en) * 2007-01-18 2008-11-20 Trustees Of Dartmouth College Iron/iron oxide nanoparticle and use thereof
US7494903B2 (en) * 2007-01-29 2009-02-24 Eastman Kodak Company Doped nanoparticle semiconductor charge transport layer
US20080193766A1 (en) * 2007-02-13 2008-08-14 Northern Nanotechnologies Control of Transport to and from Nanoparticle Surfaces
WO2008140651A2 (en) * 2007-03-13 2008-11-20 Olson Arthur J Self-assembled polyhedra
US20080237540A1 (en) * 2007-03-19 2008-10-02 Nanosys, Inc. Methods for encapsulating nanocrystals
US20100155749A1 (en) * 2007-03-19 2010-06-24 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
US20100110728A1 (en) * 2007-03-19 2010-05-06 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
KR100900569B1 (en) 2007-03-29 2009-06-02 국민대학교산학협력단 Method of forming floating gate and method of fabricating non-volatile memory device using the same
US7659210B2 (en) * 2007-05-14 2010-02-09 Micron Technology, Inc. Nano-crystal etch process
US7666763B2 (en) * 2007-05-29 2010-02-23 Canon Anelva Corporation Nanosilicon semiconductor substrate manufacturing method and semiconductor circuit device using nanosilicon semiconductor substrate manufactured by the method
US20080300918A1 (en) * 2007-05-29 2008-12-04 Commercenet Consortium, Inc. System and method for facilitating hospital scheduling and support
ES2435200T3 (en) * 2007-06-15 2013-12-16 Mayaterials, Inc. Multifunctional silsesquioxanes for new coating applications
US7868198B2 (en) * 2007-06-15 2011-01-11 Laine Richard M Multi-functional silsesquioxanes for novel coating applications
WO2009002551A1 (en) * 2007-06-26 2008-12-31 Qd Vision, Inc. Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
US8530000B2 (en) * 2007-09-19 2013-09-10 Micron Technology, Inc. Methods of forming charge-trapping regions
JP2009087782A (en) * 2007-09-28 2009-04-23 Dainippon Printing Co Ltd Manufacturing method of electroluminescent element
US8287942B1 (en) 2007-09-28 2012-10-16 Stion Corporation Method for manufacture of semiconductor bearing thin film material
US8759671B2 (en) * 2007-09-28 2014-06-24 Stion Corporation Thin film metal oxide bearing semiconductor material for single junction solar cell devices
US8187434B1 (en) 2007-11-14 2012-05-29 Stion Corporation Method and system for large scale manufacture of thin film photovoltaic devices using single-chamber configuration
US8193055B1 (en) 2007-12-18 2012-06-05 Sandisk Technologies Inc. Method of forming memory with floating gates including self-aligned metal nanodots using a polymer solution
US7723186B2 (en) * 2007-12-18 2010-05-25 Sandisk Corporation Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer
US9331209B2 (en) * 2008-01-09 2016-05-03 Faquir C Jain Nonvolatile memory and three-state FETs using cladded quantum dot gate structure
US8440903B1 (en) 2008-02-21 2013-05-14 Stion Corporation Method and structure for forming module using a powder coating and thermal treatment process
JP5446052B2 (en) * 2008-02-28 2014-03-19 株式会社村田製作所 Zinc oxide ultrafine particle dispersion solution, method for producing the zinc oxide ultrafine particle dispersion solution, and zinc oxide thin film
US8075723B1 (en) 2008-03-03 2011-12-13 Stion Corporation Laser separation method for manufacture of unit cells for thin film photovoltaic materials
US8772078B1 (en) 2008-03-03 2014-07-08 Stion Corporation Method and system for laser separation for exclusion region of multi-junction photovoltaic materials
US20090243048A1 (en) * 2008-03-25 2009-10-01 Joel Dufourcq Metallic nanocrystal encapsulation
US20090246510A1 (en) * 2008-03-25 2009-10-01 Commissariat A L'energie Atomique Metallic nanocrystal patterning
US7960715B2 (en) * 2008-04-24 2011-06-14 University Of Iowa Research Foundation Semiconductor heterostructure nanowire devices
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
JP2011524064A (en) 2008-05-06 2011-08-25 キユーデイー・ビジヨン・インコーポレーテツド Solid state lighting device containing quantum confined semiconductor nanoparticles
US20110056564A1 (en) * 2008-05-09 2011-03-10 Korgel Brian A Nanoparticles and methods of making and using
US7939454B1 (en) 2008-05-31 2011-05-10 Stion Corporation Module and lamination process for multijunction cells
US8642138B2 (en) 2008-06-11 2014-02-04 Stion Corporation Processing method for cleaning sulfur entities of contact regions
US9087943B2 (en) * 2008-06-25 2015-07-21 Stion Corporation High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
US8207008B1 (en) 2008-08-01 2012-06-26 Stion Corporation Affixing method and solar decal device using a thin film photovoltaic
US7855089B2 (en) * 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
US8236597B1 (en) 2008-09-29 2012-08-07 Stion Corporation Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
US8394662B1 (en) 2008-09-29 2013-03-12 Stion Corporation Chloride species surface treatment of thin film photovoltaic cell and manufacturing method
US8501521B1 (en) 2008-09-29 2013-08-06 Stion Corporation Copper species surface treatment of thin film photovoltaic cell and manufacturing method
US8026122B1 (en) 2008-09-29 2011-09-27 Stion Corporation Metal species surface treatment of thin film photovoltaic cell and manufacturing method
US8008112B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
US8476104B1 (en) 2008-09-29 2013-07-02 Stion Corporation Sodium species surface treatment of thin film photovoltaic cell and manufacturing method
US8008110B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method
US8383450B2 (en) * 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
US7947524B2 (en) * 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US7863074B2 (en) * 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
US7910399B1 (en) * 2008-09-30 2011-03-22 Stion Corporation Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
US8741689B2 (en) * 2008-10-01 2014-06-03 Stion Corporation Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials
US20110018103A1 (en) 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8435826B1 (en) 2008-10-06 2013-05-07 Stion Corporation Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8168463B2 (en) 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
CN102246275B (en) * 2008-10-29 2014-04-30 英诺瓦莱特公司 Methods of forming multi-doped junctions on a substrate
US8540889B1 (en) 2008-11-19 2013-09-24 Nanosys, Inc. Methods of generating liquidphobic surfaces
US8344243B2 (en) * 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
US11198270B2 (en) 2008-12-30 2021-12-14 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
US8343575B2 (en) 2008-12-30 2013-01-01 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US10214686B2 (en) 2008-12-30 2019-02-26 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
JP5423952B2 (en) * 2009-03-04 2014-02-19 セイコーエプソン株式会社 Photoelectric conversion device and electronic device
KR101783487B1 (en) 2009-05-01 2017-10-23 나노시스, 인크. Functionalized matrixes for dispersion of nanostructures
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
US8383479B2 (en) 2009-07-21 2013-02-26 Sandisk Technologies Inc. Integrated nanostructure-based non-volatile memory fabrication
JP5158375B2 (en) * 2009-07-27 2013-03-06 シャープ株式会社 Semiconductor nanoparticle phosphor
WO2011020098A1 (en) 2009-08-14 2011-02-17 Qd Vision, Inc. Lighting devices, an optical component for a lighting device, and methods
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
CA2775324C (en) 2009-09-23 2018-05-15 Crystalplex Corporation Passivated nanoparticles
EP2488360A4 (en) * 2009-10-14 2013-06-05 Univ California Nanocomposite and method of making thereof
US8809096B1 (en) 2009-10-22 2014-08-19 Stion Corporation Bell jar extraction tool method and apparatus for thin film photovoltaic materials
GB0921596D0 (en) 2009-12-09 2010-01-27 Isis Innovation Particles for the treatment of cancer in combination with radiotherapy
US8859880B2 (en) 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
US8263494B2 (en) 2010-01-25 2012-09-11 Stion Corporation Method for improved patterning accuracy for thin film photovoltaic panels
CN102834404B (en) * 2010-03-01 2016-03-09 赢创德固赛有限公司 The part of polyhedral oligomeric silsesquioxane (POSS)-connection
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
KR101650841B1 (en) * 2010-04-27 2016-08-25 삼성전자주식회사 Non-volatile memory device having vertical structure
US9029834B2 (en) 2010-07-06 2015-05-12 International Business Machines Corporation Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectric
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
US8628997B2 (en) 2010-10-01 2014-01-14 Stion Corporation Method and device for cadmium-free solar cells
KR20200039806A (en) 2010-11-10 2020-04-16 나노시스, 인크. Quantum dot films, lighting devices, and lighting methods
US8728200B1 (en) 2011-01-14 2014-05-20 Stion Corporation Method and system for recycling processing gas for selenization of thin film photovoltaic materials
US8998606B2 (en) 2011-01-14 2015-04-07 Stion Corporation Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices
US8771822B2 (en) * 2011-01-18 2014-07-08 Wisconsin Alumni Research Foundation Methods for the growth of three-dimensional nanorod networks
WO2012134629A1 (en) 2011-04-01 2012-10-04 Qd Vision, Inc. Quantum dots, method, and devices
US20140339497A1 (en) * 2011-06-20 2014-11-20 Crystalplex Corporation Stabilized nanocrystals
US8436445B2 (en) 2011-08-15 2013-05-07 Stion Corporation Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices
US8808567B2 (en) 2011-11-03 2014-08-19 Baker Hughes Incorporated Magnetic nanoparticles and magnetorheological fluid comprising same
US9283619B2 (en) * 2011-11-03 2016-03-15 Baker Hughes Incorporated Polarizable nanoparticles comprising coated metal nanoparticles and electrorheological fluid comprising same
US9139770B2 (en) 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
TWI596188B (en) 2012-07-02 2017-08-21 奈米系統股份有限公司 Highly luminescent nanostructures and methods of producing same
DE102012110668A1 (en) * 2012-11-07 2014-05-08 Osram Opto Semiconductors Gmbh Converter material, method for producing a converter material and optoelectronic component
US8877586B2 (en) * 2013-01-31 2014-11-04 Sandisk 3D Llc Process for forming resistive switching memory cells using nano-particles
JP6250785B2 (en) 2013-03-14 2017-12-20 ナノシス・インク． Solvent-free quantum dot exchange method
US9133394B2 (en) 2013-03-14 2015-09-15 Nanosys, Inc. Polyhedral oligomeric silsesquioxane nanocrystal stabilization ligands
US9951272B2 (en) 2013-04-19 2018-04-24 Samsung Research America, Inc. Method of making semiconductor nanocrystals
JP2017501530A (en) 2013-10-17 2017-01-12 ナノシス・インク． Light emitting diode (LED) device
EP3066523B1 (en) 2013-11-05 2020-02-26 Nanosys, Inc. Backlight unit for display devices adapted to reduce light leakage
JP2015102857A (en) * 2013-11-28 2015-06-04 富士フイルム株式会社 Light conversion member, backlight unit, liquid crystal display device, and method for manufacturing light conversion member
EP3971262B1 (en) 2014-05-29 2024-04-24 Tectus Corporation Dispersion system for quantum dots
GB201416354D0 (en) * 2014-09-16 2014-10-29 Ecole Polytech Monolayer nanocapsules
TWI502762B (en) * 2014-12-22 2015-10-01 Ind Tech Res Inst Compound solar cell and method for forming sulfide thin film consisting of sulfide single-crystal nanoparticles
KR102515198B1 (en) * 2014-12-23 2023-03-29 타호 리서치 리미티드 Via blocking layer
US10984735B2 (en) 2015-04-17 2021-04-20 Nanosys, Inc. White point uniformity in display devices
CN107922832B (en) 2015-08-19 2021-05-25 3M创新有限公司 Perfluoroether stabilized quantum dots
US10249808B2 (en) 2015-09-08 2019-04-02 The Regents Of The University Of California Surface doping of nanostructures
US9882108B2 (en) 2015-09-08 2018-01-30 The Regents Of The University Of California Nanostructured layers of thermoelectric materials
US10797215B2 (en) 2015-09-08 2020-10-06 Boris Russ Graded thermoelectric materials
CN108026443B (en) 2015-09-15 2020-07-10 3M创新有限公司 Additive stabilized composite nanoparticles
KR20180054676A (en) 2015-09-15 2018-05-24 쓰리엠 이노베이티브 프로퍼티즈 캄파니 Additive-stabilized composite nanoparticles
FI129889B (en) * 2015-10-09 2022-10-31 Inkron Ltd Dielectric siloxane particle films and devices having the same
US9658489B1 (en) 2015-12-31 2017-05-23 Nanosys, Inc. Backlight units for display devices
US10899961B2 (en) 2016-02-17 2021-01-26 3M Innovative Properties Company Quantum dots with stabilizing fluorochemical copolymers
CA3024847A1 (en) 2016-05-19 2017-11-23 Crystalplex Corporation Cadmium-free quantum dots, tunable quantum dots, quantum dot containing polymer, articles, films, and 3d structure containing them and methods of making and using them
KR20190033071A (en) 2016-07-20 2019-03-28 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Stabilized styrene polymers for quantum dots
WO2018017513A1 (en) 2016-07-20 2018-01-25 3M Innovative Properties Company Stabilizing styrenic polymer for quantum dots
DE102016117885A1 (en) 2016-09-22 2018-04-12 Osram Opto Semiconductors Gmbh Method for producing a decoupling element for an optoelectronic component and decoupling element
US11320577B2 (en) 2016-10-31 2022-05-03 Nanosys, Inc. Radiation absorbing element for increasing color gamut of quantum dot based display devices
WO2018144548A1 (en) 2017-01-31 2018-08-09 Nanosys, Inc. Rapid thickening of aminosilicones to promote emulsion stability and adhesion of uv-curable quantum dot enhancement film emulsions
KR102601056B1 (en) 2017-02-14 2023-11-10 삼성디스플레이 주식회사 Quantum dot, color conversion panel and display device including the same
US20200115630A1 (en) 2017-03-14 2020-04-16 3M Innovative Properties Company Additive stabilized composite nanoparticles
US11407937B2 (en) 2017-05-10 2022-08-09 Nanosys, Inc. In-situ cross-linking of emulsified quantum dot-containing domains within a carrier resin
WO2018208807A1 (en) 2017-05-10 2018-11-15 Nanosys, Inc. Silicone copolymers as emulsification additives for quantum dot resin premix
US10961448B2 (en) 2017-06-05 2021-03-30 Nanosys, Inc. Acid stabilization of quantum dot-resin concentrates and premixes
US11021651B2 (en) 2017-06-07 2021-06-01 Nanosys, Inc. Thiolated hydrophilic ligands for improved quantum dot reliability in resin films
WO2018237236A1 (en) 2017-06-23 2018-12-27 Austin Smith Homogeneous anaerobically stable quantum dot concentrates
CN111164129B (en) 2017-08-16 2024-03-12 昭荣化学工业株式会社 PEG-based ligands with enhanced dispersibility and improved properties
US10935842B2 (en) 2017-08-25 2021-03-02 Nanosys, Inc. Nanostructure based display devices
US11092850B2 (en) 2017-08-25 2021-08-17 Nanosys, Inc. Using multiple excitation wavelengths in nanostructure based display devices
US11029559B2 (en) 2017-08-25 2021-06-08 Nanosys, Inc. Nanostructure based display devices
KR20190043085A (en) * 2017-10-17 2019-04-25 엘지디스플레이 주식회사 Luminous body, light emitting film, light emitting diode and light emitting device having the luminous body
WO2019084119A1 (en) 2017-10-27 2019-05-02 Nanosys, Inc. Application of polyfunctional ligands for improving performance and stability of quantum dot inks
TWI648846B (en) * 2017-12-20 2019-01-21 友達光電股份有限公司 Light detector
US11275205B2 (en) 2018-07-24 2022-03-15 Nanosys, Inc. Methods of improving efficiency of displays using quantum dots with integrated optical elements
WO2020040982A1 (en) 2018-08-21 2020-02-27 Nanosys, Inc. Quantum dots with charge-transporting ligands
US11428988B2 (en) 2018-08-31 2022-08-30 Nanosys, Inc. Increasing color gamut performance and efficiency in quantum dot color conversion layers
KR102053921B1 (en) * 2019-03-13 2019-12-09 영창케미칼 주식회사 New fine silicon etching pattern forming method in a semiconductor manufacturing process
KR20210154190A (en) 2019-04-19 2021-12-20 나노시스, 인크. flexible electroluminescent device
EP3948412A1 (en) 2019-05-08 2022-02-09 Nanosys, Inc. Nanostructure based display devices with improved light extraction efficiency
KR20220035152A (en) 2019-07-11 2022-03-21 나노시스, 인크. Blue Luminescent Nanocrystals with Cubic Shape and Fluoride Passivation
JP2023509641A (en) 2020-01-08 2023-03-09 ナノシス・インク． Quantum dots with donor-acceptor ligands
EP4132892A2 (en) * 2020-04-06 2023-02-15 Gelest, Inc. Gradient glass-like ceramic structures and bottom-up fabrication method thereof
JP2023551766A (en) 2020-10-22 2023-12-13 ナノシス・インク． Electroluminescent device with hybrid transport layer
WO2022087220A1 (en) 2020-10-22 2022-04-28 Nanosys, Inc. Electroluminescent devices with organic transport layers
JP7335520B2 (en) * 2021-06-21 2023-08-30 日亜化学工業株式会社 WAVELENGTH CONVERSION MEMBER, LIGHT EMITTING DEVICE AND IMAGE DISPLAY DEVICE
WO2023287886A1 (en) 2021-07-13 2023-01-19 Nanosys, Inc. Tunable illumination device
US11751492B2 (en) 2021-09-24 2023-09-05 International Business Machines Corporation Embedded memory pillar
KR20230139665A (en) 2022-03-28 2023-10-05 삼성에스디아이 주식회사 Curable composition, cured layer using the composition, color filter including the cured layer and display device including the color filter
WO2023220050A1 (en) 2022-05-09 2023-11-16 Nanosys, Inc. Microled-based display device and method of manufacturing same
WO2024043081A1 (en) * 2022-08-23 2024-02-29 信越化学工業株式会社 Ink composition, production method for ink composition, and production method for color filter
CN115394568B (en) * 2022-09-13 2023-05-26 湖南师范大学 Cellulose-based hydrogel flexible electrolyte containing spiropyran

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159620A (en) * 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
US6297095B1 (en) * 2000-06-16 2001-10-02 Motorola, Inc. Memory device that includes passivated nanoclusters and method for manufacture

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043940A (en) 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
WO1993010564A1 (en) 1991-11-22 1993-05-27 The Regents Of The University Of California Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers
US5505928A (en) 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US6048616A (en) 1993-04-21 2000-04-11 Philips Electronics N.A. Corp. Encapsulated quantum sized doped semiconductor particles and method of manufacturing same
AU5177896A (en) * 1995-04-24 1996-11-18 Silicon Resources, Inc. Compositions and methods for dehydrating, passivating and se aling systems
US5690807A (en) 1995-08-03 1997-11-25 Massachusetts Institute Of Technology Method for producing semiconductor particles
US5714766A (en) 1995-09-29 1998-02-03 International Business Machines Corporation Nano-structure memory device
US6036774A (en) 1996-02-26 2000-03-14 President And Fellows Of Harvard College Method of producing metal oxide nanorods
US5897945A (en) 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
EP0792688A1 (en) 1996-03-01 1997-09-03 Dow Corning Corporation Nanoparticles of silicon oxide alloys
US5764568A (en) 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
CN1200429C (en) * 1996-11-15 2005-05-04 株式会社日立制作所 Memory device
US5997832A (en) 1997-03-07 1999-12-07 President And Fellows Of Harvard College Preparation of carbide nanorods
US6413489B1 (en) 1997-04-15 2002-07-02 Massachusetts Institute Of Technology Synthesis of nanometer-sized particles by reverse micelle mediated techniques
US6054349A (en) 1997-06-12 2000-04-25 Fujitsu Limited Single-electron device including therein nanocrystals
AU3360897A (en) * 1997-07-04 1999-01-25 Universiteit Utrecht A metal particle, its preparation and use, and a material or device comprising the metal particle
JP3727449B2 (en) 1997-09-30 2005-12-14 シャープ株式会社 Method for producing semiconductor nanocrystal
AUPP004497A0 (en) * 1997-10-28 1997-11-20 University Of Melbourne, The Stabilized particles
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US5990479A (en) 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US5938934A (en) * 1998-01-13 1999-08-17 Dow Corning Corporation Dendrimer-based nanoscopic sponges and metal composites
US6139626A (en) 1998-09-04 2000-10-31 Nec Research Institute, Inc. Three-dimensionally patterned materials and methods for manufacturing same using nanocrystals
FR2795843B1 (en) * 1999-06-30 2001-09-28 Imc PROCESS FOR THE DELOCALIZED EDITING OF MUSICAL SHEET MUSIC
AU782000B2 (en) 1999-07-02 2005-06-23 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
US6306736B1 (en) 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US6413819B1 (en) 2000-06-16 2002-07-02 Motorola, Inc. Memory device and method for using prefabricated isolated storage elements
US6344403B1 (en) 2000-06-16 2002-02-05 Motorola, Inc. Memory device and method for manufacture
WO2002003430A2 (en) * 2000-06-29 2002-01-10 California Institute Of Technology Aerosol process for fabricating discontinuous floating gate microelectronic devices
EP2360298A3 (en) 2000-08-22 2011-10-05 President and Fellows of Harvard College Method for depositing a semiconductor nanowire
JP2004510678A (en) 2000-10-04 2004-04-08 ザ　ボード　オブ　トラスティーズ　オブ　ザ　ユニバーシティ　オブ　アーカンソー Synthesis of colloidal nanocrystals
DE60125969T2 (en) * 2000-10-27 2007-10-25 The Regents Of The University Of Michigan, Ann Arbor Precisely defined nanosized building blocks for organic / inorganic nanocomposites
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
AU2904602A (en) 2000-12-11 2002-06-24 Harvard College Nanosensors
US6674932B1 (en) * 2000-12-14 2004-01-06 Hewlett-Packard Development Company, L.P. Bistable molecular mechanical devices with a middle rotating segment activated by an electric field for electronic switching, gating, and memory applications
CA2455938C (en) 2001-07-30 2012-04-17 The Board Of Trustees Of The University Of Arkansas Colloidal nanocrystals with high photoluminescence quantum yields and methods of preparing the same
US7175961B2 (en) * 2001-10-24 2007-02-13 Hewlett-Packard Development Company, L.P. Photopatternable molecular circuitry
US7700200B2 (en) 2002-03-29 2010-04-20 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US20040026684A1 (en) 2002-04-02 2004-02-12 Nanosys, Inc. Nanowire heterostructures for encoding information
JP4056817B2 (en) 2002-07-23 2008-03-05 光正 小柳 Method for manufacturing nonvolatile semiconductor memory element
CA2497451A1 (en) 2002-09-05 2004-03-18 Nanosys, Inc. Organic species that facilitate charge transfer to or from nanostructures
AU2003279708A1 (en) 2002-09-05 2004-03-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
CA2518352A1 (en) 2003-03-11 2005-03-10 Nanosys, Inc. Process for producing nanocrystals and nanocrystals produced thereby
WO2005017962A2 (en) 2003-08-04 2005-02-24 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
KR20060079209A (en) 2003-09-04 2006-07-05 나노시스, 인크. Methods of processing nanocrystals, and compositions, devices and systems including same
US8664640B2 (en) 2003-10-06 2014-03-04 Massachusetts Institute Of Technology Non-volatile memory device including semiconductor charge-trapping material particles
US20050202615A1 (en) 2004-03-10 2005-09-15 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
US7595528B2 (en) 2004-03-10 2009-09-29 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
CA2567930A1 (en) 2004-06-08 2005-12-22 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
TW201341440A (en) * 2004-06-08 2013-10-16 Sandisk Corp Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159620A (en) * 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
US6297095B1 (en) * 2000-06-16 2001-10-02 Motorola, Inc. Memory device that includes passivated nanoclusters and method for manufacture

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US7267875B2 (en) 2007-09-11
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