WO2005104252A2 - Semiconductor light emitting devices including flexible film having therein an optical element, and methods of assembling same - Google Patents

Semiconductor light emitting devices including flexible film having therein an optical element, and methods of assembling same Download PDF

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Publication number
WO2005104252A2
WO2005104252A2 PCT/US2005/001714 US2005001714W WO2005104252A2 WO 2005104252 A2 WO2005104252 A2 WO 2005104252A2 US 2005001714 W US2005001714 W US 2005001714W WO 2005104252 A2 WO2005104252 A2 WO 2005104252A2
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WO
WIPO (PCT)
Prior art keywords
light emitting
semiconductor light
flexible film
optical element
cavity
Prior art date
Application number
PCT/US2005/001714
Other languages
French (fr)
Other versions
WO2005104252A3 (en
WO2005104252A8 (en
Inventor
Gerald H. Negley
Original Assignee
Cree, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34960456&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2005104252(A2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority to KR1020067020036A priority Critical patent/KR101052096B1/en
Priority to EP05711668.3A priority patent/EP1730791B1/en
Priority to CN2005800101016A priority patent/CN1938872B/en
Priority to EP10179454.3A priority patent/EP2259351B1/en
Priority to KR1020117026477A priority patent/KR101190414B1/en
Application filed by Cree, Inc. filed Critical Cree, Inc.
Priority to JP2007506144A priority patent/JP5027652B2/en
Priority to KR1020107015549A priority patent/KR101143207B1/en
Priority to CA002554586A priority patent/CA2554586A1/en
Publication of WO2005104252A2 publication Critical patent/WO2005104252A2/en
Publication of WO2005104252A3 publication Critical patent/WO2005104252A3/en
Publication of WO2005104252A8 publication Critical patent/WO2005104252A8/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • This invention relates to semiconductor light emitting devices and fabricating methods therefor, and more particularly to packaging and packaging methods for semiconductor light emitting devices.
  • a semiconductor light emitting device includes a semiconductor light emitting element having one or more semiconductor layers that are configured to emit coherent and/or incoherent light upon energization thereof. It is also known that the semiconductor light emitting element generally is packaged to provide external electrical connections, heat sinking, lenses or waveguides, environmental protection and/or other functions for the semiconductor light emitting device. Packaging may be provided, at least in part, by at least partially surrounding the semiconductor light emitting device with a dome-shaped transparent plastic shell.
  • a two-piece package for a semiconductor light emitting device wherein the semiconductor light emitting element is mounted on a substrate of, for example, alumina, aluminum nitride and/or other materials, which include electrical traces thereon, to provide external connections for the semiconductor light emitting element
  • semiconductor light emitting element A second substrate, which, for example, may be silver plated copper, is mounted on the first substrate, for example using glue, surrounding the semiconductor light emitting element.
  • a lens may be placed on the second substrate over the semiconductor light emitting element.
  • Phosphors may be included in a semiconductor light emitting device using many conventional techniques. In one technique, phosphor is coated inside and/or outside the plastic shell. In other techniques, phosphor is coated on the semiconductor light emitting device itself, for example using electrophoretic deposition. In still other techniques, a drop of a material such as epoxy that contains phosphor therein may be placed inside the plastic shell, oh the semiconductor light emitting device and/or between the device and the shell. This technique may be referred to as a "glob top".
  • the phosphor coatings may also incorporate an index matching material and/or a separate index matching material may be provided.
  • LEDs that employ phosphor coatings are described, for example, in U.S. Patents, 6,252,254; 6,069,440; 5,858,278; 5,813,753; 5,277,840; and 5,959,316.
  • the packaging for a semiconductor light emitting device may be costly and, in some cases, more costly than the semiconductor light emitting element itself.
  • the assembly process also may be costly, time consuming and/or subject to failures.
  • Some embodiments of the present invention provide semiconductor light emitting devices that include a substrate having a face, a flexible film that includes therein an optical element, on the face, and a semiconductor light emitting element between the substrate and the flexible film and configured to emit light through the optical element.
  • an optical coupling media such as optical el; is provided between the optical element and the semiconductor light emitting element.
  • the face includes a cavity therein, and the semiconductor light emitting element is in the cavity.
  • the flexible film extends onto the face beyond the cavity, and the optical element overlies the cavity.
  • an optical coupling media is provided in the cavity.
  • Semiconductor light emitting devices may be assembled, according to various embodiments of the present invention, by mounting a semiconductor light emitting element on a substrate face, and attaching a flexible film that includes therein an optical element to the substrate face such that, in operation, the semiconductor light emitting element emits lights through the optical element.
  • An optical coupling media may be placed between the semiconductor light emitting element and the optical coupling element.
  • the optical element includes (i.e., comprises) a lens.
  • the optical element includes a prism.
  • the flexible film includes a first face adjacent the substrate and a second face remote from the substrate, and the optical element includes a first optical element on the first face, and a second optical element on the second face, both of which are located such that the light emitting element emits light through the first optical element and the second optical element.
  • the optical element includes phosphor and/or other optical emission enhancing and/or converting elements.
  • the optical element includes an optical scattering element. Combinations and subcombinations of these and/or other optical elements also may be provided.
  • an optical coupling media may be provided between the optical element and the semiconductor light emitting element in any of these embodiments.
  • the flexible film also may be provided according to various embodiments of the present invention.
  • at least a portion of the flexible film that overlies the cavity is transparent to the light, and at least a portion of the flexible film that extends onto the face beyond the cavity is opaque to the light.
  • at least a portion of the flexible film that overlies the cavity includes a first material and at least a portion of the flexible film that extends onto the face beyond the cavity includes a second material.
  • the semiconductor light emitting element includes a wire that extends towards and contacts the flexible film in the cavity, and the flexible film includes a - —transparent conductor in the cavity that electrically connects to the wire.
  • an attachment element also is provided that is configured to attach the flexible film and the substrate to one another.
  • Many conventional attachment techniques can be used to provide an attachment element.
  • Some embodiments of the present invention may be configured to incorporate phosphor into the semiconductor light emitting device.
  • phosphor is provided on the flexible film between the lens and the semiconductor light emitting element.
  • the lens includes a concave inner surface adjacent the semiconductor light emitting element, and the phosphor includes a conformal phosphor layer on the concave inner surface.
  • the optical element includes a lens that overlies the cavity and protrudes away from the cavity, the flexible film further includes a protruding element between the lens and the light emitting element that protrudes towards the cavity, and a conformal phosphor coating is provided on the protruding element. Combinations and subcombinations of these and/or other configurations of phosphor alsojmay be provided. Moreover, an optical coupling media may be provided between the phosphor and the semiconductor light emitting element in any of these embodiments.
  • the semiconductor light emitting element includes a wire that extends towards the flexible substrate. In some of these embodiments, the optical element includes a prism that is configured to reduce shadowing by the wire, of the light that is emitted from the semiconductor light emitting element.
  • Each semiconductor light emitting element may be included in its own individual cavity and/or multiple semiconductor light emitting elements may be included in a single cavity.
  • the same phosphor may be included on the flexible film for each optical element.
  • different phosphors may be used. For example, a first phosphor layer and a first semiconductor light emitting element may be configured to generate red light, a second phosphor layer and a second semiconductor light emitting element may be configured to generate blue light, and a ⁇ third phosphor layer and a third semiconductor light emitting element may be configured to generate green light.
  • Figure 1 is an exploded cross-sectional view of semiconductor light emitting devices and fabrication methods therefor, according to various embodiments of the present invention.
  • Figures 2-12 are cross-sectional views of semiconductor light emitting devices according to various embodiments of the present invention.
  • Figure 13 is a perspective view of a semiconductor light emitting device according to various embodiments of the present invention.
  • FIG. 1 is an exploded cross-sectional view of semiconductor light emitting devices and assembling methods therefor, according to various embodiments of the present invention.
  • these semiconductor light emitting devices 100 include a substrate 110 having a face 110a, a flexible film 120 that includes therein an optical element 130, on the face 110a, and a semiconductor light emitting element 140 between the substrate 110 and the flexible film 120, and configured to emit light 160 through the optical element.
  • An attachment element 150 may be used to attach the flexible film 120 and the substrate 110 to one another ;
  • the substrate 110 may include alumina, aluminum nitride, metal and/or other materials that are conventionally used for mounting semiconductor light emitting elements thereon.
  • the substrate 110 can be a solid metal block, as described in copending Application Serial No. 10/659,108 to Negley et al., entitled Solid Metal Block Mounting Substrates for Semiconductor Light Emitting Devices, and Oxidizing Methods for Fabricating Same, filed September 9, 2003, assigned to the assignee of the present invention, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein.
  • the design of substrates 110 are well known to those having skill in the art and need not be described further herein.
  • the semiconductor light emitting element 140 may include a light emitting diode, laser diode and/or other semiconductor device which includes one or more semiconductor layers, which may include silicon, silicon carbide, gallium nitride and/or other semiconductor materials, a substrate which may include sapphire, silicon, silicon carbide and/or other microelectronic substrates, and one or more contact layerswhich may include metal and/or other conductive layers. In some embodiments, ultraviolet, blue and/or green LEDs may be provided.
  • semiconductor light emitting devices 140 are well known to those having skill in the art and need not be described in detail herein.
  • the light emitting elements 140 may be gallium nitride-based LEDs or lasers fabricated on a silicon carbide substrate such as those devices manufactured and sold by Cree, Inc. of Durham, North Carolina.
  • the present invention may be suitable for use with LEDs and/or lasers as described in United States Patent Nos.
  • 10/659,241 entitled Phosphor-Coated Light Emitting Diodes Including Tapered Side-walls and Fabrication Methods Therefor, filed September 9, 2003, the disclosure of which is incorporated by reference herein as if set forth fully, may also be suitable for use in embodiments of the present invention.
  • the LEDs and/or lasers may be configured to operate such that light emission occurs through the substrate.
  • the substrate may be patterned so as to enhance light output of the devices as is described, for example, in the above-cited U.S. Patent Publication No. US 2002/0123164 Al.
  • the flexible film 120 can provide a cover slip that can be made of a flexible material such as a conventional Room Temperature Vulcanizing (RTN) silicone rubber. Other silicone-based and/or flexible materials may be used. By being made of a flexible material, the flexible film 120 can conform to the substrate 110 as it expands and contracts during operations. Moreover, the flexible film 120 can be made by simple low-cost techniques such as transfer molding, injection molding and/or other conventional techniques that are well known ⁇ -to those having skill in the art.
  • RTN Room Temperature Vulcanizing
  • the flexible film 120 includes therein an optical element 130.
  • the optical element can include a lens, a prism, an optical emission enhancing and/or converting element, such as a phosphor, an optical scattering element and or other optical element.
  • One or more optical elements 130 also may be provided, as will be described in detail below.
  • an optical coupling media 170 such as an optical coupling gel and/or other index matching maLenai, may oe provi ⁇ e ⁇ Detween the optical element 13U and the semiconductor light emitting device 140, in some embodiments.
  • the attachment element 150 can be embodied as an adhesive that may be placed around the periphery of the substrate 110, around the periphery of the flexible film 120 and/or at selected portions thereof, such as at the corners thereof.
  • the substrate 110 may be coined around the flexible film 120, to provide an attachment element 150.
  • Other conventional attaching techniques may be used.
  • Figure 1 also illustrates methods of assembling semiconductor light emitting devices 100 according to various embodiments of the present invention.
  • a semiconductor light emitting element 140 is mounted on a substrate face 110a.
  • a flexible film 120 that includes therein an optical element 130 is attached to the substrate face 110a, for example using an attachment element 150, such that, in operation, the semiconductor light emitting element emits light 160 through the optical element 130.
  • an optical coupling media 170 is placed between the semiconductor light emitting element 140 and the optical element 130.
  • Figure 2 is a cross-sectional view of semiconductor light emitting devices according to other embodiments of the present invention.
  • the substrate face 110a includes a cavity 110b therein.
  • the flexible film 120 extends onto the face 110a beyond the cavity 110b.
  • the optical element 130 overlies the cavity 110b, and the semiconductor light emitting element 140 is in the cavity 110b, and is configured to emit light 160 through the optical element 130.
  • the optical element 130 includes a concave lens.
  • an optical coupling media 170 is provided in the cavity 110b between the optical element 130 and the semiconductor light emitting element 140. In some embodiments, the optical coupling media 170 fills the cavity 110b.
  • Figure 3 is a cross-sectional view of other embodiments of the presentinvention.
  • two optical elements 130 and 330 are included in the flexible film 120.
  • a first optical element 130 includes a lens and a second optical element 330 includes a prism.
  • Light from the semiconductor light emitting element 140 passes through the prism 330 and through the lens 130.
  • An optical coupling media 170 also may be provided.
  • the optical coupling media 170 fills the cavity 110b.
  • the optical coupling media 170 may have a sufficient difference in index of refraction difference from the prism such that the prism can reduce shadowing.
  • the semiconductor light emitting element includes a wire 140a that extends towards the flexible film 120, and the prism 330 is configured to reduce shadowing by the wire 140a of the light that is emitted from the semiconductor light emitting element 140. More uniform light emissions thereby may be provided, with reduced shadowing of the wire 140a.
  • wire is used herein in a generic sense to encompass any electrical connection for the semiconductor light emitting element 140.
  • FIG 4 is a cross-sectional view of other embodiments of the present invention.
  • phosphor 410 is provided on the flexible film 120 between the lens 130 and the semiconductor light emitting element 140.
  • the phosphor 410 can ' include cerium-doped Yttrium Aluminum Garnet (YAG) and/or other conventional phosphors.
  • the phosphor comprises Cesium doped Yttrium Aluminum Garnet (YAG:Ce).
  • YAG:Ce Cesium doped Yttrium Aluminum Garnet
  • nano- phosphors may be used.
  • Phosphors are well known to those having skill in the art and need not be described further herein.
  • An optical coupling media 170 also may be provided that may fill the cavity 110b.
  • Figure 5 illustrates yet other embodiments of the present invention.
  • the lens 130 includes a concave inner surface 130a adjacent the semiconductor light emitting element 140, and the phosphor 410 includes a conformal phosphor layer on the concave inner surface 130a.
  • An optical coupling media 170 also may be provided that may fill the cavity 110b.
  • Figure 6 is a cross-sectional view of other embodiments. As shown in Figure 6, at least a portion 120d of the flexible film 120 that overlies the cavity 110b is transparent to the light. Moreover, at least a portion 120c of the flexible film 120 that extends onto the face 110a beyond the cavity 110b is opaque to the light, as shown by the dotted portions 120c of the flexible film 120. The opaque regions 120c can reduce or prevent bouncing of light rays, and thereby potentially produce a more desirable ⁇ -light pattern.
  • An optical coupling media 170 also may be provided that may fill the- ⁇ r ' cavity 110b.
  • Figure 7 is a cross-sectional view of other embodiments of the present invention wherein the flexible film 120 may be fabricated of multiple materials.
  • At least a portion 120d of the flexible film 120 that overlies the cavity 110b includes a first material
  • at least a portion 120c of the flexible film 120 that extends onto the face 110a beyond the cavity 110b includes a second material.
  • 1 wo or more mate ⁇ als may be used in the flexible film 120 in some embodiments, to provide different characteristics for the portion of the flexible film 120 through which light is emitted and through which light is not emitted.
  • Multiple materials may be used for other purposes in other embodiments.
  • an inflexible and/or flexible plastic lens may be attached to a flexible film.
  • Such a flexible film 120 with multiple materials may be fabricated using conventional multiple molding techniques, for example.
  • the first material that is molded may not be fully cured, so as to provide a satisfactory bond that attaches to the second material that is subsequently molded.
  • the same material may be used for the optical element and the flexible film, wherein the optical element is formed and then the flexible film is formed surrounding the optical " element.
  • An optical coupling media 170 also may be provided that may fill the cavity 110b.
  • Figure 8 is a cross-sectional view of other embodiments of the present invention.
  • the semiconductor light emitting element 140 includes a wire 140a, that extends towards and contacts the flexible film 120 in the cavity 110b.
  • the flexible film 120 includes a transparent conductor 810 which can include Indium Tin Oxide (ITO) and/or other conventional transparent conductors.
  • ITO Indium Tin Oxide
  • the transparent conductor 810 extends in the cavity 110b and electrically connects to the wire. Reduced shadowing by the contact 140a thereby may be provided.
  • a wire bond to the substrate 110, and the potential consequent light distortion, may be reduced or eliminated.
  • An optical coupling media 170 also may be provided that may fill the cavity 110b.
  • Figure 9 is a cross-sectional view of other embodiments of the present invention.
  • the optical element 130 includes a lens that overlies the cavity 110b and protrudes away from the cavity 110b.
  • the flexible film 120 further includes a protruding element 930 between the lens 130 and the light emitting • "element 140 that protrudes towards the cavity 110b.
  • a conformal phosphor layer 410 is provided on the protruding element 930.
  • optical coupling media 170 in the device may be displaced. Arrangements of Figure 9 may thus provide more uniform phosphor coating at desired distances from the light emitting element 140, so as to provide more uniform illumination.
  • the optical coupling media 170 may fill the cavity 110b.
  • ⁇ gures r ⁇ ana n illustrate semiconductor light emitting devices including multiple semiconductor light emitting elements and/or multiple optical elements according to various embodiments of the present invention.
  • the optical element 130 is a first optical element
  • the semiconductor light emitting element 140 is a first semiconductor light emitting element.
  • the flexible film 120 also includes therein a second optical element 130' that is spaced apart from the first optical element 130, and the device further includes a second semiconductor light emitting element 140' between the substrate 110 and the flexible film 120, and configured to emit light through the second optical element 130'.
  • a third optical element 130" and a third semiconductor light emitting element 140" also may be provided.
  • the optical elements 130, 130' and 130" may be the same and/or different from one another, and the semiconductor-light emitting elements 140, 140' and 140" may be the same and/or different from one another.
  • the cavity 110b is a first cavity, and second and third cavities 110b', 110b", respectively, are provided for the second and third semiconductor light emitting elements 140', 140", respectively.
  • the cavities 110b, 110b' and 110b" may be the same and/or may have different configurations from one another.
  • An optical coupling media 170 also may be provided that may fill the cavity or cavities.
  • the phosphor 410 may be a first phosphor layer, and second and/or third phosphor layers 410' and 410", respectively, may be provided on the flexible film 120 between the second optical element 130' and the second semiconductor light emitting element 140', and between the third optical element 130" and the third semiconductor light emitting element 140", respectively.
  • the phosphor layers 410, 410', 410" may be the same, may be different and/or may be eliminated.
  • the first phosphor layer 410 and the first semiconductor light emitting element 140 areconfigured to generate red light
  • the second phosphor layer 410' and the second semiconductor light emitting element 140' are configured to generate blue light
  • the third phosphor layer 410" and the third semiconductor light emitting element 140" are configured to generate green light.
  • a Red, Green, Blue (RGB) light emitting element that can emit white light thereby may be provided in some embodiments.
  • Figure 11 is a cross-sectional view of other embodiments of the present invention. In these embodiments, a single cavity 1100 is provided for the first, second and third semiconductor light emitting elements 140, 140' and 140", respectively.
  • FIG. 12 is a cross-sectional view of yet other embodiments of the present invention.
  • the optical element 1230 comprises a lens having phosphor dispersed therein. Lenses including phosphor dispersed therein are described, for example, in Application Serial No. 10/659,240 to Negley et al., entitled Transmissive Optical Elements Including Transparent Plastic Shell Having a Phosphor Dispersed Therein, and Methods of Fabricating Same, filed September 9, 2003, assigned to the assignee of the present invention, the disclosure of which is hereby incorporated hereini-iy reference in its entirety as if set forth fully herein.
  • An optical coupling media 170 also may be provided that may fill the cavity 110b. '
  • an optical scattering element may be embedded in the lens as shown in Figure 12, and/or provided as a separating layer as shown, for example, in Figure 9, in addition or instead of phosphor.
  • Figure 13 is a perspective view of semiconductor light emitting devices according to other embodiments of the present invention.
  • the substrate 110 is attached to a conventional package 1310.
  • An optical coupling media 170 also may be provided.
  • the flexible film 120 that wasdescribed above may be made of a flexible material such as RTV,- GE RTV 615 marketed by GE, UR 234 marketed by Thermoset/Lord Corp. and/or other conventional flexible materials, and in some embodiment may be between about
  • the flexible film 120 incorporates one or more optical elements 130 to achieve a desired optical design. Being made of a flexible material, the flexible film 120 can conform to the semiconductor light emitting device as it expands and contracts. Moreover, in some embodiments, the flexible film can be fabricated by simple low cost techniques such as transfer molding, injection molding and/or other techniques, and may include multiple optical elements and/or other features on either side of the flexible film membrane. This may permit a "single" placement of a complex optical element upon a package (or substrate to a package) that can include multiple LED emitters.
  • LED packages use a lens molded from rigid plastic or glass.
  • a hard encapsulant is used to encapsulate the chip and form the optical element, or a lens is applied upon an optical coupling media, such as an optical gel, for example Nye optical gel.
  • the hard encapsulant may be plagued by optical degradation and high stress on LED chips, and power LED chips in particular, and the optical coupling media may also potentially create problems because this gel may be expose ⁇ on the surface of the part which may result in trapping of dust/debris on the exposed material due to the stickiness of the gel.
  • flexible films 120 according to some embodiments of the present invention can be the terminating surface of the package using an optical coupling media 170, and also includes the optical elements 130, such as one or more optical lens.
  • the ability to place one unit can potentially provide a benefit when using a package that has multiple LEDs in it.
  • the single placement of a flexible film 130 can be provided.
  • Still other features can be incorporated into the flexible film 130.
  • a filled region including a phosphor and/or an optical coupling media 170 may be incorporated to give the features of a paint-on lens for making white light.
  • a paint-on lens for making white light is described in Application Serial No.
  • Some embodiments of the present invention can reduce or minimize the volume of optical coupling media 170, by providing a protrusion such as was described, for example, in Figure 9. By reducing the amount of optical coupling media 170, a more uniform light emission may be provided. Thus, these and or other embodiments of the present invention can reduce or eliminate angular-dependent radiation patterns of light output from the light emitting device, such as angular dependence of Color Correlated Temperature (CCT).
  • CCT Color Correlated Temperature

Abstract

Semiconductor light emitting devices include a substrate having a face, a flexible film that includes therein an optical element, on the face, and a semiconductor light emitting element between the substrate and the flexible film and configured to emit light through the optical element. The face can include a cavity therein, and the semiconductor light emitting element may be in the cavity. The flexible film extends onto the face beyond the cavity, and the optical element overlies the cavity.

Description

SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING FLEXIBLE FILM HAVING THEREIN AN OPTICAL ELEMENT, AND METHODS OF
ASSEMBLING SAME
Field of the Invention
This invention relates to semiconductor light emitting devices and fabricating methods therefor, and more particularly to packaging and packaging methods for semiconductor light emitting devices.
Background of the Invention Semiconductor light emitting devices, such as Light Emitting Diodes (LEDs) or laser diodes, are widely used for many applications. As is well known to those having skill in the art, a semiconductor light emitting device includes a semiconductor light emitting element having one or more semiconductor layers that are configured to emit coherent and/or incoherent light upon energization thereof. It is also known that the semiconductor light emitting element generally is packaged to provide external electrical connections, heat sinking, lenses or waveguides, environmental protection and/or other functions for the semiconductor light emitting device. Packaging may be provided, at least in part, by at least partially surrounding the semiconductor light emitting device with a dome-shaped transparent plastic shell.
For example, it is known to provide a two-piece package for a semiconductor light emitting device wherein the semiconductor light emitting element is mounted on a substrate of, for example, alumina, aluminum nitride and/or other materials, which include electrical traces thereon, to provide external connections for the
"semiconductor light emitting element. A second substrate, which, for example, may be silver plated copper, is mounted on the first substrate, for example using glue, surrounding the semiconductor light emitting element. A lens may be placed on the second substrate over the semiconductor light emitting element. Light emitting diodes with two-piece packages as described above are described in Application Serial No. 10/446,532 to Loh, entitled Power Surface Mount Light Emitting Die Package, filed May 27, 2003, assigned to the assignee of the present invention, the disclosure oi wnicn is Hereby incorporated herein by reference in its entirety as if set forth fully herein.
It is often desirable to incorporate phosphor into a semiconductor light emitting device, to enhance the emitted radiation in a particular frequency band and/or to convert at least some of the radiation to another frequency band. Phosphors may be included in a semiconductor light emitting device using many conventional techniques. In one technique, phosphor is coated inside and/or outside the plastic shell. In other techniques, phosphor is coated on the semiconductor light emitting device itself, for example using electrophoretic deposition. In still other techniques, a drop of a material such as epoxy that contains phosphor therein may be placed inside the plastic shell, oh the semiconductor light emitting device and/or between the device and the shell. This technique may be referred to as a "glob top". The phosphor coatings may also incorporate an index matching material and/or a separate index matching material may be provided. LEDs that employ phosphor coatings are described, for example, in U.S. Patents, 6,252,254; 6,069,440; 5,858,278; 5,813,753; 5,277,840; and 5,959,316.
Unfortunately, the packaging for a semiconductor light emitting device may be costly and, in some cases, more costly than the semiconductor light emitting element itself. Moreover, the assembly process also may be costly, time consuming and/or subject to failures.
Summary of the Invention
Some embodiments of the present invention provide semiconductor light emitting devices that include a substrate having a face, a flexible film that includes therein an optical element, on the face, and a semiconductor light emitting element between the substrate and the flexible film and configured to emit light through the optical element. In some embodiments, an optical coupling media, such as optical el;, is provided between the optical element and the semiconductor light emitting element. In some embodiments, the face includes a cavity therein, and the semiconductor light emitting element is in the cavity. The flexible film extends onto the face beyond the cavity, and the optical element overlies the cavity. In some embodiments, an optical coupling media is provided in the cavity. Semiconductor light emitting devices may be assembled, according to various embodiments of the present invention, by mounting a semiconductor light emitting element on a substrate face, and attaching a flexible film that includes therein an optical element to the substrate face such that, in operation, the semiconductor light emitting element emits lights through the optical element. An optical coupling media may be placed between the semiconductor light emitting element and the optical coupling element. Many different configurations of optical elements may be provided according to various embodiments of the present invention. In some embodiments, the optical element includes (i.e., comprises) a lens. In other embodiments, the optical element includes a prism. In other embodiments, the flexible film includes a first face adjacent the substrate and a second face remote from the substrate, and the optical element includes a first optical element on the first face, and a second optical element on the second face, both of which are located such that the light emitting element emits light through the first optical element and the second optical element. In some embodiments, the optical element includes phosphor and/or other optical emission enhancing and/or converting elements. In still other embodiments, the optical element includes an optical scattering element. Combinations and subcombinations of these and/or other optical elements also may be provided. Moreover, an optical coupling media may be provided between the optical element and the semiconductor light emitting element in any of these embodiments.
Many configurations of the flexible film also may be provided according to various embodiments of the present invention. For example, in some embodiments, at least a portion of the flexible film that overlies the cavity is transparent to the light, and at least a portion of the flexible film that extends onto the face beyond the cavity is opaque to the light. In other embodiments, at least a portion of the flexible film that overlies the cavity includes a first material and at least a portion of the flexible film that extends onto the face beyond the cavity includes a second material. In still other embodiments, the semiconductor light emitting element includes a wire that extends towards and contacts the flexible film in the cavity, and the flexible film includes a - —transparent conductor in the cavity that electrically connects to the wire.
Combinations and subcombinations of these and/or other configurations of flexible film also may be provided.
In other embodiments, an attachment element also is provided that is configured to attach the flexible film and the substrate to one another. Many conventional attachment techniques can be used to provide an attachment element. Some embodiments of the present invention may be configured to incorporate phosphor into the semiconductor light emitting device. In some embodiments, phosphor is provided on the flexible film between the lens and the semiconductor light emitting element. In other embodiments, the lens includes a concave inner surface adjacent the semiconductor light emitting element, and the phosphor includes a conformal phosphor layer on the concave inner surface. In yet other embodiments, the optical element includes a lens that overlies the cavity and protrudes away from the cavity, the flexible film further includes a protruding element between the lens and the light emitting element that protrudes towards the cavity, and a conformal phosphor coating is provided on the protruding element. Combinations and subcombinations of these and/or other configurations of phosphor alsojmay be provided. Moreover, an optical coupling media may be provided between the phosphor and the semiconductor light emitting element in any of these embodiments. In still other embodiments of the present invention, the semiconductor light emitting element includes a wire that extends towards the flexible substrate. In some of these embodiments, the optical element includes a prism that is configured to reduce shadowing by the wire, of the light that is emitted from the semiconductor light emitting element.
Multiple semiconductor light emitting elements and/or optical elements may be incorporated in a semiconductor light emitting device according to various embodiments of the present invention. Each semiconductor light emitting element may be included in its own individual cavity and/or multiple semiconductor light emitting elements may be included in a single cavity. Moreover, in some embodiments, the same phosphor may be included on the flexible film for each optical element. In other embodiments, different phosphors may be used. For example, a first phosphor layer and a first semiconductor light emitting element may be configured to generate red light, a second phosphor layer and a second semiconductor light emitting element may be configured to generate blue light, and a^ third phosphor layer and a third semiconductor light emitting element may be configured to generate green light. Combinations and subcombinations of these and/or other multiple semiconductor light emitting elements and/or multiple optical elements also may be provided. Finally, combinations and subcombinations of these and/or other optical elements, flexible films, phosphor and/or multiple elements may be provided, according to various embodiments of the present invention. Brief Description of the Drawings
Figure 1 is an exploded cross-sectional view of semiconductor light emitting devices and fabrication methods therefor, according to various embodiments of the present invention.
Figures 2-12 are cross-sectional views of semiconductor light emitting devices according to various embodiments of the present invention.
Figure 13 is a perspective view of a semiconductor light emitting device according to various embodiments of the present invention.
Detailed Description "The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like numbers refer to like elements throughout. It will be understood that when an element such as a layer, region or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. It will be understood that if part of an element, such as a surface, is referred to as "inner," it is farther from the outside of the device than other parts of the element. Furthermore, relative terms such as "beneath" or "overlies" may be used herein to describe a relationship of one layer or region to another layer or region relative to a substrate or base layer as illustrated in the figures. It will be understood that these terms are intended to encompass different orientationsof the device in addition to the orientation depicted in the figures. Finally, the term "directly" means that there are no intervening elements. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. IJtiese terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first region, layer or section discussed below could be termed a second region, layer or section, and, similarly, a second without departing from the teachings of the present invention. Figure 1 is an exploded cross-sectional view of semiconductor light emitting devices and assembling methods therefor, according to various embodiments of the present invention. Referring to Figure 1, these semiconductor light emitting devices 100 include a substrate 110 having a face 110a, a flexible film 120 that includes therein an optical element 130, on the face 110a, and a semiconductor light emitting element 140 between the substrate 110 and the flexible film 120, and configured to emit light 160 through the optical element. An attachment element 150 may be used to attach the flexible film 120 and the substrate 110 to one another ;
Still referring to Figure 1, the substrate 110 may include alumina, aluminum nitride, metal and/or other materials that are conventionally used for mounting semiconductor light emitting elements thereon. In other embodiments, the substrate 110 can be a solid metal block, as described in copending Application Serial No. 10/659,108 to Negley et al., entitled Solid Metal Block Mounting Substrates for Semiconductor Light Emitting Devices, and Oxidizing Methods for Fabricating Same, filed September 9, 2003, assigned to the assignee of the present invention, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein. The design of substrates 110 are well known to those having skill in the art and need not be described further herein.
The semiconductor light emitting element 140 may include a light emitting diode, laser diode and/or other semiconductor device which includes one or more semiconductor layers, which may include silicon, silicon carbide, gallium nitride and/or other semiconductor materials, a substrate which may include sapphire, silicon, silicon carbide and/or other microelectronic substrates, and one or more contact layerswhich may include metal and/or other conductive layers. In some embodiments, ultraviolet, blue and/or green LEDs may be provided. The design and fabrication of semiconductor light emitting devices 140 are well known to those having skill in the art and need not be described in detail herein.
For example, the light emitting elements 140 may be gallium nitride-based LEDs or lasers fabricated on a silicon carbide substrate such as those devices manufactured and sold by Cree, Inc. of Durham, North Carolina. The present invention may be suitable for use with LEDs and/or lasers as described in United States Patent Nos. 6,201,262; 6,187,606; 6,120,600; 5,912,477; 5,739,554; 5,631,190; 5,604,135; 5,523,589; 5,416,342; 5,393,993; 5,338,944; 5,210,051; 5,027,168; 5,027,168; 4,966,862 and/or 4,918,497, the disclosures of which are incorporated herein by reference as if set forth fully herein. Other suitable LEDs and/or lasers are described in published U.S. Patent Publication No. US 2003/0006418 Al entitled Group III Nitride Based Light Emitting Diode Structures With a Quantum Well and Superlattice, Group III Nitride Based Quantum Well Structures and Group III Nitride Based Superlattice Structures, published January 9, 2003, as well as published U.S. Patent Publication No. US 2002/0123164 Al entitled Light Emitting Diodes Including Modifications for Light Extraction and Manufacturing Methods Therefor. Furthermore, phosphor coated LEDs, such as those described in U.S. Application Serial No. 10/659,241 , entitled Phosphor-Coated Light Emitting Diodes Including Tapered Side-walls and Fabrication Methods Therefor, filed September 9, 2003, the disclosure of which is incorporated by reference herein as if set forth fully, may also be suitable for use in embodiments of the present invention. The LEDs and/or lasers may be configured to operate such that light emission occurs through the substrate. In such embodiments, the substrate may be patterned so as to enhance light output of the devices as is described, for example, in the above-cited U.S. Patent Publication No. US 2002/0123164 Al.
Still referring to Figure 1, the flexible film 120 can provide a cover slip that can be made of a flexible material such as a conventional Room Temperature Vulcanizing (RTN) silicone rubber. Other silicone-based and/or flexible materials may be used. By being made of a flexible material, the flexible film 120 can conform to the substrate 110 as it expands and contracts during operations. Moreover, the flexible film 120 can be made by simple low-cost techniques such as transfer molding, injection molding and/or other conventional techniques that are well known ■ -to those having skill in the art.
As described above, the flexible film 120 includes therein an optical element 130. The optical element can include a lens, a prism, an optical emission enhancing and/or converting element, such as a phosphor, an optical scattering element and or other optical element. One or more optical elements 130 also may be provided, as will be described in detail below. Moreover, as shown in Figure 1, an optical coupling media 170, such as an optical coupling gel and/or other index matching maLenai, may oe proviαeα Detween the optical element 13U and the semiconductor light emitting device 140, in some embodiments.
Still referring to Figure 1, the attachment element 150 can be embodied as an adhesive that may be placed around the periphery of the substrate 110, around the periphery of the flexible film 120 and/or at selected portions thereof, such as at the corners thereof. In other embodiments, the substrate 110 may be coined around the flexible film 120, to provide an attachment element 150. Other conventional attaching techniques may be used.
Figure 1 also illustrates methods of assembling semiconductor light emitting devices 100 according to various embodiments of the present invention. As shown in Figure I, a semiconductor light emitting element 140 is mounted on a substrate face 110a. "A flexible film 120 that includes therein an optical element 130 is attached to the substrate face 110a, for example using an attachment element 150, such that, in operation, the semiconductor light emitting element emits light 160 through the optical element 130. In some embodiments, an optical coupling media 170 is placed between the semiconductor light emitting element 140 and the optical element 130.
Figure 2 is a cross-sectional view of semiconductor light emitting devices according to other embodiments of the present invention. In these embodiments, the substrate face 110a includes a cavity 110b therein. The flexible film 120 extends onto the face 110a beyond the cavity 110b. The optical element 130 overlies the cavity 110b, and the semiconductor light emitting element 140 is in the cavity 110b, and is configured to emit light 160 through the optical element 130. In Figure 2, the optical element 130 includes a concave lens. In some embodiments, an optical coupling media 170 is provided in the cavity 110b between the optical element 130 and the semiconductor light emitting element 140. In some embodiments, the optical coupling media 170 fills the cavity 110b.
Figure 3 is a cross-sectional view of other embodiments of the presentinvention. As shown in Figure 3, two optical elements 130 and 330, are included in the flexible film 120. A first optical element 130 includes a lens and a second optical element 330 includes a prism. Light from the semiconductor light emitting element 140 passes through the prism 330 and through the lens 130. An optical coupling media 170 also may be provided. In some embodiments, the optical coupling media 170 fills the cavity 110b. The optical coupling media 170 may have a sufficient difference in index of refraction difference from the prism such that the prism can reduce shadowing. As shown in Figure 3, the semiconductor light emitting element includes a wire 140a that extends towards the flexible film 120, and the prism 330 is configured to reduce shadowing by the wire 140a of the light that is emitted from the semiconductor light emitting element 140. More uniform light emissions thereby may be provided, with reduced shadowing of the wire 140a. It will be understood that the term "wire" is used herein in a generic sense to encompass any electrical connection for the semiconductor light emitting element 140.
Figure 4 is a cross-sectional view of other embodiments of the present invention. As shown in Figure 4, phosphor 410 is provided on the flexible film 120 between the lens 130 and the semiconductor light emitting element 140. The phosphor 410 can'include cerium-doped Yttrium Aluminum Garnet (YAG) and/or other conventional phosphors. In some embodiments, the phosphor comprises Cesium doped Yttrium Aluminum Garnet (YAG:Ce). In other embodiments, nano- phosphors may be used. Phosphors are well known to those having skill in the art and need not be described further herein. An optical coupling media 170 also may be provided that may fill the cavity 110b.
Figure 5 illustrates yet other embodiments of the present invention. In these embodiments, the lens 130 includes a concave inner surface 130a adjacent the semiconductor light emitting element 140, and the phosphor 410 includes a conformal phosphor layer on the concave inner surface 130a. An optical coupling media 170 also may be provided that may fill the cavity 110b.
Figure 6 is a cross-sectional view of other embodiments. As shown in Figure 6, at least a portion 120d of the flexible film 120 that overlies the cavity 110b is transparent to the light. Moreover, at least a portion 120c of the flexible film 120 that extends onto the face 110a beyond the cavity 110b is opaque to the light, as shown by the dotted portions 120c of the flexible film 120. The opaque regions 120c can reduce or prevent bouncing of light rays, and thereby potentially produce a more desirable ■ -light pattern. An optical coupling media 170 also may be provided that may fill the- ~r' cavity 110b. Figure 7 is a cross-sectional view of other embodiments of the present invention wherein the flexible film 120 may be fabricated of multiple materials. As shown in Figure 7, at least a portion 120d of the flexible film 120 that overlies the cavity 110b includes a first material, and at least a portion 120c of the flexible film 120 that extends onto the face 110a beyond the cavity 110b includes a second material. 1 wo or more mateπals may be used in the flexible film 120 in some embodiments, to provide different characteristics for the portion of the flexible film 120 through which light is emitted and through which light is not emitted. Multiple materials may be used for other purposes in other embodiments. For example, an inflexible and/or flexible plastic lens may be attached to a flexible film. Such a flexible film 120 with multiple materials may be fabricated using conventional multiple molding techniques, for example. In some embodiments, the first material that is molded may not be fully cured, so as to provide a satisfactory bond that attaches to the second material that is subsequently molded. In other embodiments, the same material may be used for the optical element and the flexible film, wherein the optical element is formed and then the flexible film is formed surrounding the optical" element. An optical coupling media 170 also may be provided that may fill the cavity 110b.
Figure 8 is a cross-sectional view of other embodiments of the present invention. In these embodiments, the semiconductor light emitting element 140 includes a wire 140a, that extends towards and contacts the flexible film 120 in the cavity 110b. The flexible film 120 includes a transparent conductor 810 which can include Indium Tin Oxide (ITO) and/or other conventional transparent conductors. The transparent conductor 810 extends in the cavity 110b and electrically connects to the wire. Reduced shadowing by the contact 140a thereby may be provided. Moreover, a wire bond to the substrate 110, and the potential consequent light distortion, may be reduced or eliminated. An optical coupling media 170 also may be provided that may fill the cavity 110b.
Figure 9 is a cross-sectional view of other embodiments of the present invention. As shown in Figure 9, the optical element 130 includes a lens that overlies the cavity 110b and protrudes away from the cavity 110b. The flexible film 120 further includes a protruding element 930 between the lens 130 and the light emitting • "element 140 that protrudes towards the cavity 110b. As shown in Figure 9, a conformal phosphor layer 410 is provided on the protruding element 930. By providing the protruding element 930 on the back of the lens 130, optical coupling media 170 in the device may be displaced. Arrangements of Figure 9 may thus provide more uniform phosphor coating at desired distances from the light emitting element 140, so as to provide more uniform illumination. The optical coupling media 170 may fill the cavity 110b. πgures rυ ana n illustrate semiconductor light emitting devices including multiple semiconductor light emitting elements and/or multiple optical elements according to various embodiments of the present invention. For example, as shown in Figure 10, the optical element 130 is a first optical element, and the semiconductor light emitting element 140 is a first semiconductor light emitting element. The flexible film 120 also includes therein a second optical element 130' that is spaced apart from the first optical element 130, and the device further includes a second semiconductor light emitting element 140' between the substrate 110 and the flexible film 120, and configured to emit light through the second optical element 130'. Moreover, a third optical element 130" and a third semiconductor light emitting element 140" also may be provided. The optical elements 130, 130' and 130" may be the same and/or different from one another, and the semiconductor-light emitting elements 140, 140' and 140" may be the same and/or different from one another. Moreover, in embodiments of Figure 10, the cavity 110b is a first cavity, and second and third cavities 110b', 110b", respectively, are provided for the second and third semiconductor light emitting elements 140', 140", respectively. The cavities 110b, 110b' and 110b" may be the same and/or may have different configurations from one another. An optical coupling media 170 also may be provided that may fill the cavity or cavities. As also shown in Figure 10, the phosphor 410 may be a first phosphor layer, and second and/or third phosphor layers 410' and 410", respectively, may be provided on the flexible film 120 between the second optical element 130' and the second semiconductor light emitting element 140', and between the third optical element 130" and the third semiconductor light emitting element 140", respectively. The phosphor layers 410, 410', 410" may be the same, may be different and/or may be eliminated. In particular, in some embodiments of the present invention, the first phosphor layer 410 and the first semiconductor light emitting element 140 areconfigured to generate red light, the second phosphor layer 410' and the second semiconductor light emitting element 140' are configured to generate blue light, and the third phosphor layer 410" and the third semiconductor light emitting element 140" are configured to generate green light. A Red, Green, Blue (RGB) light emitting element that can emit white light thereby may be provided in some embodiments. .Figure 11 is a cross-sectional view of other embodiments of the present invention. In these embodiments, a single cavity 1100 is provided for the first, second and third semiconductor light emitting elements 140, 140' and 140", respectively. An optical coupling media 170 also may be provided that may fill the cavity 1100. Figure 12 is a cross-sectional view of yet other embodiments of the present invention. In Figure 12, the optical element 1230 comprises a lens having phosphor dispersed therein. Lenses including phosphor dispersed therein are described, for example, in Application Serial No. 10/659,240 to Negley et al., entitled Transmissive Optical Elements Including Transparent Plastic Shell Having a Phosphor Dispersed Therein, and Methods of Fabricating Same, filed September 9, 2003, assigned to the assignee of the present invention, the disclosure of which is hereby incorporated hereini-iy reference in its entirety as if set forth fully herein. An optical coupling media 170 also may be provided that may fill the cavity 110b. '
In still other embodiments of the present invention, an optical scattering element may be embedded in the lens as shown in Figure 12, and/or provided as a separating layer as shown, for example, in Figure 9, in addition or instead of phosphor.
Figure 13 is a perspective view of semiconductor light emitting devices according to other embodiments of the present invention. The substrate 110 is attached to a conventional package 1310. An optical coupling media 170 also may be provided.
It will be understood by those having skill in the art that various embodiments of the invention have been described individually in connection with Figures 1-13. However, combinations and subcombinations of the embodiments of Figures 1-13 may be provided according to various embodiments of the present invention.
Additional discussion of various embodiments of the present invention now will be provided. In particular, in some embodiments, the flexible film 120 that wasdescribed above may be made of a flexible material such as RTV,- GE RTV 615 marketed by GE, UR 234 marketed by Thermoset/Lord Corp. and/or other conventional flexible materials, and in some embodiment may be between about
25μm and about 500μm thick. The flexible film 120 incorporates one or more optical elements 130 to achieve a desired optical design. Being made of a flexible material, the flexible film 120 can conform to the semiconductor light emitting device as it expands and contracts. Moreover, in some embodiments, the flexible film can be fabricated by simple low cost techniques such as transfer molding, injection molding and/or other techniques, and may include multiple optical elements and/or other features on either side of the flexible film membrane. This may permit a "single" placement of a complex optical element upon a package (or substrate to a package) that can include multiple LED emitters.
Conventionally, LED packages use a lens molded from rigid plastic or glass. Either a hard encapsulant is used to encapsulate the chip and form the optical element, or a lens is applied upon an optical coupling media, such as an optical gel, for example Nye optical gel. The hard encapsulant may be plagued by optical degradation and high stress on LED chips, and power LED chips in particular, and the optical coupling media may also potentially create problems because this gel may be exposeϋ on the surface of the part which may result in trapping of dust/debris on the exposed material due to the stickiness of the gel. In contrast, flexible films 120 according to some embodiments of the present invention can be the terminating surface of the package using an optical coupling media 170, and also includes the optical elements 130, such as one or more optical lens. The ability to place one unit (the flexible film with multiple optical elements) can potentially provide a benefit when using a package that has multiple LEDs in it. Instead of placing a lens for each LED, the single placement of a flexible film 130 can be provided. Still other features can be incorporated into the flexible film 130. For example, on the opposing side of the optical lens, a filled region including a phosphor and/or an optical coupling media 170 may be incorporated to give the features of a paint-on lens for making white light. A paint-on lens for making white light is described in Application Serial No. 10/666,399 to Michael Leung, entitled Molded Chip Fabrication Method and Apparatus, filed September 18, 2003, assigned to the assignee of the present invention, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein. - • - ■• ■ ■ Some embodiments of the present invention can reduce or minimize the volume of optical coupling media 170, by providing a protrusion such as was described, for example, in Figure 9. By reducing the amount of optical coupling media 170, a more uniform light emission may be provided. Thus, these and or other embodiments of the present invention can reduce or eliminate angular-dependent radiation patterns of light output from the light emitting device, such as angular dependence of Color Correlated Temperature (CCT). Thus, light intensity and the x, y uiirυmaαcuy vaiues/ coordinates rrom all surfaces ot the device can remain relatively constant in some embodiments. This may be advantageous when used for illumination applications, such as in a room, where a spotlight effect is not desirable. In the drawings and specification, there have been disclosed embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims.

Claims

What is Claimed is:
1. A semiconductor light emitting device comprising: a substrate having a face; a flexible film that includes therein an optical element, on the face; and a semiconductor light emitting element between the substrate and the flexible film and configured to emit light through the optical element.
2. A device according to Claim 1 wherein the face includes a cavity therein, wherein the flexible film extends onto the face beyond the cavity, wherein the optical element overlies the cavity and wherein the semiconductor light emitting element is in the cavity.
A device according to Claim 1 wherein the optical element comprises a lens.
4. A device according to Claim 1 wherein the optical element comprises a prism.
5. A device according to Claim 4 wherein the semiconductor light emitting element includes a wire that extends towards the flexible substrate and wherein the prism is configured to reduce shadowing by the wire, of the light that is emitted from the semiconductor light emitting element.
6. A device according to Claim 3 further comprising phosphor on the flexible film between the lens and the semiconductor light emitting element.
7. A device according to Claim 6 wherein the lens includes a concave • "inner surface adjacent the semiconductor light emitting element and;. wherein the phosphor comprises a conformal phosphor layer on the concave inner surface.
8. A device according to Claim 2 wherein at least a portion of the flexible film that overlies the cavity is transparent to the light and wherein at least a portion of the flexible film that extends onto the face beyond the cavity is opaque to the light. y. A device according to Claim 2 wherein at least a portion of the flexible film that overlies the cavity comprises a first material and wherein at least a portion of the flexible film that extends onto the face beyond the cavity comprises a second material.
10. A device according to Claim 2 wherein the semiconductor light emitting element includes a wire that extends towards and contacts the flexible film in the cavity and wherein the flexible film includes a transparent conductor in the cavity that electrically connects to the wire.
11. A device according to Claim 2 wherein the optical element comprises a lens that overlies the cavity and protrudes away from the cavity, the flexible film further comprising a protruding element between the lens and the semiconductor light emitting element that protrudes towards the cavity.
12. A device according to Claim 11 further comprising a conformal phosphor layer on the protruding element.
13. A device according to Claim 1 wherein the flexible film includes a first face adjacent the substrate and a second face remote from the substrate and wherein the optical element comprises a first optical element on the first face and a second optical element on the second face, both of which are located such that the light emitting element emits light through the first optical element and the second optical element.
14. A device according to Claim 1 further comprising an attachment element that is configured to attach the flexible film and the substrate to one another.
15. A device according to Claim 1 wherein the optical element is a first optical element and the semiconductor light emitting element is a first semiconductor light emitting element, the flexible film including therein a second optical element that is spaced apart from the first optical element, the device further comprising a second semiconductor light einitting element between the substrate and the flexible film and configured to emit light through the second optical element.
16. A device according to Claim 15 wherein the face includes first and second cavities therein, wherein the flexible film extends onto the face beyond the first and second cavities, wherein the first optical element overlies the first cavity, wherein the first semiconductor light emitting element is in the first cavity, wherein the second optical element overlies the second cavity and wherein the second semiconductor light emitting element is in the second cavity.
17. A device according to Claim 16 further comprising a first phosphor layer on the flexible film between the first optical element and the first semiconductor • light, emitting element and a second phosphor layer on the flexible filrn between the second" optical element and the second semiconductor light emitting element.
18. A device according to Claim 17 wherein the first and second phosphor layers comprise different phosphors.
19. A device according to Claim 15 wherein the face includes a cavity therein, wherein the flexible film extends onto the face beyond the cavity, wherein the first optical element overlies the cavity, wherein the first semiconductor light emitting element is in the cavity, wherein the second optical element overlies the cavity and wherein the second semiconductor light emitting element is in the cavity.
20. A device according to Claim 19 further comprising a first phosphor layer on the flexible film between the first optical element and the first semiconductor light emitting element and a second phosphor layer on the flexible film between the second optical element and the second semiconductor light emitting element.
21. A device according to Claim 20 wherein the first and^second phosphors- layers comprise different phosphors.
22. A device according to Claim 1 wherein the semiconductor light emitting element comprises a light emitting diode.
23. A device according to Claim 15 wherein the flexible film includes therein a third optical element that is spaced apart from the first and second optical elements, the device further comprising a third semiconductor light emitting element between the substrate and the flexible film and configured to emit light through the third optical element.
24. A device according to Claim 23 further comprising a first phosphor layer on the flexible film between the first optical element and the first semiconductor light emitting element, a second phosphor layer on the flexible film between the second optical element and the second semiconductor light emitting element and a third phosphor layer on the flexible film between the third optical element and the third semiconductor light emitting element.
25. A device according to Claim 24 wherein the first phosphor layer and the first semiconductor light emitting element are configured to generate red light, the second phosphor layer and the second semiconductor light emitting element are configured to generate blue light and the third phosphor layer and the third semiconductor light emitting element are configured to generate green light.
26. A device according to Claim 1 wherein the optical element comprises phosphor.
27. A device according to Claim 26 wherein the optical element comprises a lens having phosphor dispersed therein.
28. A device according to Claim 1 wherein the optical element comprises an optical emission enhancing and/or converting element.
29. A device according to Claim 1 wherein the optical element comprises an optical scattering element.
30. A device according to Claim 1 further comprising an optical coupling media between the optical element and the semiconductor light emitting element.
31. A device according to Claim 2 further comprising an optical coupling media in the cavity between the optical element and the semiconductor light emitting element.
32. A device according to Claim 6 further comprising an optical coupling media between the phosphor and the semiconductor light emitting element.
33. A device according to Claim 11 further comprising an optical coupling media between the protruding element and the semiconductor light emitting element.
34. A device according to Claim 12 further comprising an optical coupling media hetween the conformal phosphor layer and the semiconductor light emitting element.
35. A method of assembling a semiconductor light emitting device comprising: mounting a semiconductor light emitting element on a substrate face; and attaching a flexible film that includes therein an optical element, to the substrate face, such that, in operation, the semiconductor light emitting element emits light through the optical element.
36. A method according to Claim 35 : wherein the face includes a cavity therein; wherein mounting a semiconductor light emitting element on a substrate face comprises mounting a semiconductor light emitting element in the cavity; and wherein attaching a flexible film comprises attaching a flexible film that includes therein an optical element, to the substrate face, such that the flexible film -extends onto the face beyond the cavity and the optical element overlies the cavity. -
37. A method according to Claim 35 wherein the optical element comprises a lens, a prism, phosphor, an optical emission enhancing and/or converting element and/or an optical scattering element.
8. A method according to Claim 35 wherein attaching a flexible film is preceded by forming a phosphor layer on the flexible film, adjacent the optical element.
39. A method according to Claim 35 wherein attaching a flexible film is preceded by: forming the optical element; and forming the flexible film surrounding the optical element.
40. A method according to Claim 35 wherein attaching a flexible film is preceded by: '
"forming the optical element from a first material; and forming the flexible film from a second material that is attached to the first material.
41. A method according to Claim 35 wherein attaching a flexible film is preceded by forming a transparent conductor on the flexible film.
42. A method according to Claim 35 wherein mounting a semiconductor light emitting device on a substrate face comprises: mounting a plurality of semiconductor light emitting elements on a substrate face; and wherein attaching a flexible film comprises attaching a flexible film that includes a plurality of optical elements to the substrate face, such that, in operation, a respective semiconductor light emitting element emits light through a respective optical element.
43. A method according to Claim 42 wherein mounting a plurality of semiconductor light emitting elements on a substrate face comprises mounting a plurality of semiconductor light emitting elements in a corresponding plurality of cavities in the substrate face.
44. A method according to Claim 42 wherein mounting a plurality of semiconductor light emitting elements on a substrate face comprises mounting a plurality of semiconductor light emitting elements in a single cavity in the substrate face.
45. A method according to Claim 35 wherein the following is performed between mounting a semiconductor light emitting element and attaching a flexible film: placing an optical coupling media between the semiconductor light emitting element and the optical element.
46. A method according to Claim 36 wherein the following is performed between mounting a semiconductor light emitting element and attaching a flexible film: " placing an optical coupling media in the cavity.
PCT/US2005/001714 2004-03-29 2005-01-19 Semiconductor light emitting devices including flexible film having therein an optical element, and methods of assembling same WO2005104252A2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
CA002554586A CA2554586A1 (en) 2004-03-29 2005-01-19 Semiconductor light emitting devices including flexible film having therein an optical element, and methods of assembling same
EP05711668.3A EP1730791B1 (en) 2004-03-29 2005-01-19 Semiconductor light emitting device including flexible film having therein an optical element, and method of assembling the same
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006148051A (en) * 2004-06-30 2006-06-08 Mitsubishi Chemicals Corp Light emitting device, backlight unit for illumination and display device and display device
WO2007023411A1 (en) * 2005-08-24 2007-03-01 Philips Intellectual Property & Standards Gmbh Light emitting diodes and lasers diodes with color converters
EP1850399A1 (en) * 2006-04-25 2007-10-31 ILED Photoelectronics Inc. Sealing structure for a white light emitting diode
EP2038939A1 (en) * 2006-06-27 2009-03-25 Cree, Inc. Efficient emitting led package and method for efficiently emitting light
JP2009538532A (en) * 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Lighting device
EP2151873A3 (en) * 2004-10-25 2010-03-24 Cree, Inc. Solid metal block semiconductor light emitting device mounting substrates and packages
EP2216585A1 (en) * 2007-12-07 2010-08-11 Sony Corporation Light source apparatus and display apparatus
JP2010533976A (en) * 2007-07-18 2010-10-28 キユーデイー・ビジヨン・インコーポレーテツド Quantum dot-based light sheet useful for solid-state lighting
WO2012128911A1 (en) * 2011-03-18 2012-09-27 Osram Sylvania Inc. Led package using phosphor containing elements and light source containing same
WO2012135502A1 (en) * 2011-03-31 2012-10-04 Xicato, Inc. Grid structure on a transmissive layer of an led-based illumination module
WO2012154446A1 (en) * 2011-05-12 2012-11-15 3M Innovative Properties Company Optical structure for remote phosphor led

Families Citing this family (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521667B2 (en) * 2003-06-23 2009-04-21 Advanced Optical Technologies, Llc Intelligent solid state lighting
US7145125B2 (en) 2003-06-23 2006-12-05 Advanced Optical Technologies, Llc Integrating chamber cone light using LED sources
US7355284B2 (en) 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
GB2425449B (en) * 2005-04-26 2007-05-23 City Greening Engineering Comp Irrigation system
US7646035B2 (en) * 2006-05-31 2010-01-12 Cree, Inc. Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices
US8835952B2 (en) 2005-08-04 2014-09-16 Cree, Inc. Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants
US7329907B2 (en) * 2005-08-12 2008-02-12 Avago Technologies, Ecbu Ip Pte Ltd Phosphor-converted LED devices having improved light distribution uniformity
CN101460779A (en) 2005-12-21 2009-06-17 科锐Led照明技术公司 Lighting device
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US7777166B2 (en) * 2006-04-21 2010-08-17 Cree, Inc. Solid state luminaires for general illumination including closed loop feedback control
US7722220B2 (en) 2006-05-05 2010-05-25 Cree Led Lighting Solutions, Inc. Lighting device
EP2027602A4 (en) * 2006-05-23 2012-11-28 Cree Inc Lighting device and method of making
US7763478B2 (en) 2006-08-21 2010-07-27 Cree, Inc. Methods of forming semiconductor light emitting device packages by liquid injection molding
JP2010506402A (en) 2006-10-02 2010-02-25 イルミテックス, インコーポレイテッド LED system and method
US7889421B2 (en) 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
US20080121911A1 (en) * 2006-11-28 2008-05-29 Cree, Inc. Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same
TWI460881B (en) 2006-12-11 2014-11-11 Univ California Transparent light emitting diodes
US8652040B2 (en) 2006-12-19 2014-02-18 Valencell, Inc. Telemetric apparatus for health and environmental monitoring
US8157730B2 (en) 2006-12-19 2012-04-17 Valencell, Inc. Physiological and environmental monitoring systems and methods
US7968900B2 (en) * 2007-01-19 2011-06-28 Cree, Inc. High performance LED package
US9061450B2 (en) * 2007-02-12 2015-06-23 Cree, Inc. Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
US7709853B2 (en) * 2007-02-12 2010-05-04 Cree, Inc. Packaged semiconductor light emitting devices having multiple optical elements
US7972030B2 (en) 2007-03-05 2011-07-05 Intematix Corporation Light emitting diode (LED) based lighting systems
US7964888B2 (en) * 2007-04-18 2011-06-21 Cree, Inc. Semiconductor light emitting device packages and methods
TW200843050A (en) * 2007-04-27 2008-11-01 jin-quan Bai Thin-type image sensing chip package
US20080283864A1 (en) * 2007-05-16 2008-11-20 Letoquin Ronan P Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices
JP5773646B2 (en) 2007-06-25 2015-09-02 キユーデイー・ビジヨン・インコーポレーテツド Compositions and methods comprising depositing nanomaterials
CN101743488B (en) * 2007-07-17 2014-02-26 科锐公司 Optical elements with internal optical features and methods of fabricating same
US8791631B2 (en) 2007-07-19 2014-07-29 Quarkstar Llc Light emitting device
US8251903B2 (en) 2007-10-25 2012-08-28 Valencell, Inc. Noninvasive physiological analysis using excitation-sensor modules and related devices and methods
US10256385B2 (en) * 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US7829358B2 (en) 2008-02-08 2010-11-09 Illumitex, Inc. System and method for emitter layer shaping
US8177382B2 (en) * 2008-03-11 2012-05-15 Cree, Inc. Apparatus and methods for multiplanar optical diffusers and display panels for using the same
US20090250626A1 (en) * 2008-04-04 2009-10-08 Hexatech, Inc. Liquid sanitization device
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
JP2011524064A (en) 2008-05-06 2011-08-25 キユーデイー・ビジヨン・インコーポレーテツド Solid state lighting device containing quantum confined semiconductor nanoparticles
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
US8240875B2 (en) 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
US20100004518A1 (en) 2008-07-03 2010-01-07 Masimo Laboratories, Inc. Heat sink for noninvasive medical sensor
US7928458B2 (en) * 2008-07-15 2011-04-19 Visera Technologies Company Limited Light-emitting diode device and method for fabricating the same
US7728399B2 (en) * 2008-07-22 2010-06-01 National Semiconductor Corporation Molded optical package with fiber coupling feature
US8630691B2 (en) 2008-08-04 2014-01-14 Cercacor Laboratories, Inc. Multi-stream sensor front ends for noninvasive measurement of blood constituents
US7932529B2 (en) * 2008-08-28 2011-04-26 Visera Technologies Company Limited Light-emitting diode device and method for fabricating the same
US8853712B2 (en) 2008-11-18 2014-10-07 Cree, Inc. High efficacy semiconductor light emitting devices employing remote phosphor configurations
US8004172B2 (en) 2008-11-18 2011-08-23 Cree, Inc. Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes and methods of assembling same
US9052416B2 (en) 2008-11-18 2015-06-09 Cree, Inc. Ultra-high efficacy semiconductor light emitting devices
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8788002B2 (en) 2009-02-25 2014-07-22 Valencell, Inc. Light-guiding devices and monitoring devices incorporating same
JP5789199B2 (en) 2009-02-25 2015-10-07 ヴァレンセル,インコーポレイテッド Headset and earbud
US8096671B1 (en) 2009-04-06 2012-01-17 Nmera, Llc Light emitting diode illumination system
US20110006163A1 (en) * 2009-07-13 2011-01-13 David Wait Segmented parabolic concentrator for space electric power
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
DE102009039982A1 (en) * 2009-09-03 2011-03-10 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component
JP5936810B2 (en) * 2009-09-11 2016-06-22 ローム株式会社 Light emitting device
US20110062469A1 (en) * 2009-09-17 2011-03-17 Koninklijke Philips Electronics N.V. Molded lens incorporating a window element
US8203161B2 (en) * 2009-11-23 2012-06-19 Koninklijke Philips Electronics N.V. Wavelength converted semiconductor light emitting device
KR20120120187A (en) * 2009-12-30 2012-11-01 뉴포트 코포레이션 Led device architecture employing novel optical coating and method of manufacture
US9991427B2 (en) * 2010-03-08 2018-06-05 Cree, Inc. Photonic crystal phosphor light conversion structures for light emitting devices
JP2012019075A (en) * 2010-07-08 2012-01-26 Sony Corp Light-emitting element and display device
JP2012019074A (en) 2010-07-08 2012-01-26 Sony Corp Light-emitting element and display device
US8835199B2 (en) * 2010-07-28 2014-09-16 GE Lighting Solutions, LLC Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration
US9140429B2 (en) 2010-10-14 2015-09-22 Cree, Inc. Optical element edge treatment for lighting device
US8944632B2 (en) * 2010-10-15 2015-02-03 Douglas Tveit LED lighting system and method for external surfaces
US9648673B2 (en) 2010-11-05 2017-05-09 Cree, Inc. Lighting device with spatially segregated primary and secondary emitters
US8491140B2 (en) 2010-11-05 2013-07-23 Cree, Inc. Lighting device with multiple emitters and remote lumiphor
US20130242273A1 (en) * 2010-12-09 2013-09-19 Koninklijke Philips Electronics N.V. Lighting apparatus for generating light
US8888701B2 (en) 2011-01-27 2014-11-18 Valencell, Inc. Apparatus and methods for monitoring physiological data during environmental interference
KR20120133264A (en) * 2011-05-31 2012-12-10 삼성전자주식회사 Lens for light emitting diode, light emitting diode module comprising the same and method for manufacturing light emitting diode module using the same
WO2013019494A2 (en) 2011-08-02 2013-02-07 Valencell, Inc. Systems and methods for variable filter adjustment by heart rate metric feedback
TWM428490U (en) * 2011-09-27 2012-05-01 Lingsen Precision Ind Ltd Optical module packaging unit
US9864121B2 (en) 2011-11-22 2018-01-09 Samsung Electronics Co., Ltd. Stress-resistant component for use with quantum dots
JP6514894B2 (en) * 2011-11-23 2019-05-15 クォークスター・エルエルシー Light emitting device for propagating light asymmetrically
WO2013085874A1 (en) 2011-12-05 2013-06-13 Cooledge Lighting Inc. Control of luminous intensity distribution from an array of point light sources
RU2502917C2 (en) * 2011-12-30 2013-12-27 Закрытое Акционерное Общество "Научно-Производственная Коммерческая Фирма "Элтан Лтд" Light diode source of white light with combined remote photoluminiscent converter
WO2013109390A1 (en) 2012-01-16 2013-07-25 Valencell, Inc. Reduction of physiological metric error due to inertial cadence
US10390762B2 (en) 2012-01-16 2019-08-27 Valencell, Inc. Physiological metric estimation rise and fall limiting
US9388959B2 (en) 2012-03-02 2016-07-12 Osram Sylvania Inc. White-light emitter having a molded phosphor sheet and method of making same
US8591076B2 (en) 2012-03-02 2013-11-26 Osram Sylvania Inc. Phosphor sheet having tunable color temperature
CN103375708B (en) * 2012-04-26 2015-10-28 展晶科技(深圳)有限公司 Light-emitting diode lamp source device
JP6042545B2 (en) 2012-08-23 2016-12-14 国立大学法人東京農工大学 Highly transparent aluminum nitride single crystal layer and device comprising the same
US9915410B2 (en) 2012-09-13 2018-03-13 Quarkstar Llc Light-emitting devices with reflective elements
US9291763B2 (en) 2012-09-13 2016-03-22 Quarkstar Llc Light-emitting device with remote scattering element and total internal reflection extractor element
WO2014138591A1 (en) 2013-03-07 2014-09-12 Quarkstar Llc Illumination device with multi-color light-emitting elements
US9299883B2 (en) 2013-01-29 2016-03-29 Hexatech, Inc. Optoelectronic devices incorporating single crystalline aluminum nitride substrate
US20140209950A1 (en) * 2013-01-31 2014-07-31 Luxo-Led Co., Limited Light emitting diode package module
US9752757B2 (en) 2013-03-07 2017-09-05 Quarkstar Llc Light-emitting device with light guide for two way illumination
WO2014159954A1 (en) 2013-03-14 2014-10-02 Hexatech, Inc. Power semiconductor devices incorporating single crystalline aluminum nitride substrate
US10811576B2 (en) 2013-03-15 2020-10-20 Quarkstar Llc Color tuning of light-emitting devices
US9470395B2 (en) 2013-03-15 2016-10-18 Abl Ip Holding Llc Optic for a light source
US9587790B2 (en) 2013-03-15 2017-03-07 Cree, Inc. Remote lumiphor solid state lighting devices with enhanced light extraction
CN103346243B (en) * 2013-07-12 2016-08-31 广东洲明节能科技有限公司 Carry heat sink and the LED light source of long-distance fluorescent powder structure and production method thereof
US9099575B2 (en) 2013-07-16 2015-08-04 Cree, Inc. Solid state lighting devices and fabrication methods including deposited light-affecting elements
TWI582344B (en) * 2013-08-05 2017-05-11 鴻海精密工業股份有限公司 Lens and light source device incorporating the same
TWI650851B (en) * 2013-12-10 2019-02-11 新加坡商新加坡恒立私人有限公司 Wafer level optical module and manufacturing method thereof
KR20150105169A (en) * 2014-03-06 2015-09-16 교우세라 커넥터 프로덕츠 가부시키가이샤 Lighting apparatus
US10147854B2 (en) * 2014-05-10 2018-12-04 Sensor Electronic Technology, Inc. Packaging for ultraviolet optoelectronic device
USD774006S1 (en) * 2014-08-27 2016-12-13 Mitsubishi Electric Corporation Light source module
KR102347528B1 (en) 2015-01-14 2022-01-05 삼성디스플레이 주식회사 Flexible display device
DE102015107580A1 (en) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Radiation-emitting optoelectronic component
WO2017070463A1 (en) 2015-10-23 2017-04-27 Valencell, Inc. Physiological monitoring devices and methods that identify subject activity type
US10945618B2 (en) 2015-10-23 2021-03-16 Valencell, Inc. Physiological monitoring devices and methods for noise reduction in physiological signals based on subject activity type
WO2018009736A1 (en) 2016-07-08 2018-01-11 Valencell, Inc. Motion-dependent averaging for physiological metric estimating systems and methods
DE102017101729A1 (en) * 2017-01-30 2018-08-02 Osram Opto Semiconductors Gmbh Radiation-emitting device
US11511467B2 (en) 2017-09-19 2022-11-29 Lumileds Llc Light emitting device and manufacturing method thereof
JP7007560B2 (en) * 2017-09-28 2022-01-24 日亜化学工業株式会社 Light source device
WO2019204058A1 (en) * 2018-04-18 2019-10-24 Urban Gary M Colored silicone gels for tinting landscape lighting
KR102452424B1 (en) * 2019-03-22 2022-10-11 엘지이노텍 주식회사 Vehicle lighting module and lighting apparatus having thereof
CN117605970A (en) * 2019-03-22 2024-02-27 Lg伊诺特有限公司 Lighting device
DE102020115536A1 (en) * 2019-06-21 2020-12-24 Lg Display Co., Ltd. Light guide film, backlight unit and display device
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
CH717330B1 (en) * 2020-07-27 2021-10-29 Polycontact Ag Optics for a lighting device and lighting device.
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
CN112071875B (en) * 2020-09-15 2023-04-07 深圳市华星光电半导体显示技术有限公司 Display device and manufacturing method thereof

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152618A (en) * 1977-04-05 1979-05-01 Tokyo Shibaura Electric Co., Ltd. Light-emitting display device including light diffusing film
US4168102A (en) * 1976-10-12 1979-09-18 Tokyo Shibaura Electric Co., Ltd. Light-emitting display device including a light diffusing bonding layer
JPS5776885A (en) * 1980-10-31 1982-05-14 Nec Corp Optical semiconductor device
JPH08116094A (en) * 1994-10-14 1996-05-07 Shichizun Denshi:Kk Surface mount type light emitting element
JPH11251638A (en) * 1998-03-03 1999-09-17 Yamaha Corp Brightness adjustable device
US20020088987A1 (en) * 2000-12-26 2002-07-11 Kazunori Sakurai Optical device and method for manufacturing the same, and electronic apparatus
WO2003007663A1 (en) * 2001-07-10 2003-01-23 Trustees Of Princeton University Micro-lens arrays for display intensity enhancement
JP2003318448A (en) * 2002-02-19 2003-11-07 Nichia Chem Ind Ltd Light emitting device and its forming method
US20030209714A1 (en) * 2000-10-12 2003-11-13 General Electric Company Solid state lighting device with reduced form factor including led with directional emission and package with microoptics
US20040130912A1 (en) * 2002-12-20 2004-07-08 Citizen Electronics Co., Ltd. Light guide plate and support unit for the same

Family Cites Families (128)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6418A (en) * 1849-05-01 Improvement in the preparation of flour for bread-making
US123164A (en) * 1872-01-30 Improvement in fishing-apparatus
US4154219A (en) * 1977-03-11 1979-05-15 E-Systems, Inc. Prismatic solar reflector apparatus and method of solar tracking
JPS5570080A (en) * 1978-11-21 1980-05-27 Nec Corp Preparation of luminous display device
US4545366A (en) * 1984-09-24 1985-10-08 Entech, Inc. Bi-focussed solar energy concentrator
US4711972A (en) * 1985-07-05 1987-12-08 Entech, Inc. Photovoltaic cell cover for use with a primary optical concentrator in a solar energy collector
JP2593703B2 (en) * 1987-12-24 1997-03-26 三菱電線工業株式会社 Light-emitting diode lighting
US5132045A (en) * 1988-03-16 1992-07-21 Mitsubishi Rayon Co., Ltd. Acrylic phosphor paste compositions and phosphor coatings obtained therefrom
US4918497A (en) * 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US5027168A (en) * 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5338944A (en) * 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
JPH07307492A (en) * 1994-05-11 1995-11-21 Mitsubishi Cable Ind Ltd Led aggregate module and its manufacture
US5604135A (en) * 1994-08-12 1997-02-18 Cree Research, Inc. Method of forming green light emitting diode in silicon carbide
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5631190A (en) * 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US6061111A (en) * 1995-11-30 2000-05-09 Sony Corporation Reflective LCD having orientation film formed on quarter wavelayer and planarizing film formed on reflector layer
JP2947156B2 (en) * 1996-02-29 1999-09-13 双葉電子工業株式会社 Phosphor manufacturing method
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US5861503A (en) * 1997-04-30 1999-01-19 The Regents Of The University Of California Process for producing 8-fluoropurines
US6031179A (en) * 1997-05-09 2000-02-29 Entech, Inc. Color-mixing lens for solar concentrator system and methods of manufacture and operation thereof
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
TW393785B (en) * 1997-09-19 2000-06-11 Siemens Ag Method to produce many semiconductor-bodies
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JPH11163412A (en) * 1997-11-25 1999-06-18 Matsushita Electric Works Ltd Led illuminator
US6252254B1 (en) * 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
KR100702273B1 (en) * 1998-09-28 2007-03-30 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Lighting system
US6204523B1 (en) * 1998-11-06 2001-03-20 Lumileds Lighting, U.S., Llc High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range
JP2000200929A (en) * 1998-12-29 2000-07-18 San Arrow Kk Dot matrix light emitting display body
US6521916B2 (en) * 1999-03-15 2003-02-18 Gentex Corporation Radiation emitter device having an encapsulant with different zones of thermal conductivity
US6489637B1 (en) * 1999-06-09 2002-12-03 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
US6075200A (en) * 1999-06-30 2000-06-13 Entech, Inc. Stretched Fresnel lens solar concentrator for space power
US6483196B1 (en) * 2000-04-03 2002-11-19 General Electric Company Flip chip led apparatus
DE10023353A1 (en) * 2000-05-12 2001-11-29 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing it
US6577073B2 (en) * 2000-05-31 2003-06-10 Matsushita Electric Industrial Co., Ltd. Led lamp
US6518600B1 (en) * 2000-11-17 2003-02-11 General Electric Company Dual encapsulation for an LED
JP2002176660A (en) * 2000-12-08 2002-06-21 Univ Tokyo Image display means and image display device
US6411046B1 (en) * 2000-12-27 2002-06-25 Koninklijke Philips Electronics, N. V. Effective modeling of CIE xy coordinates for a plurality of LEDs for white LED light control
AUPR245601A0 (en) * 2001-01-10 2001-02-01 Silverbrook Research Pty Ltd An apparatus (WSM09)
US6891200B2 (en) 2001-01-25 2005-05-10 Matsushita Electric Industrial Co., Ltd. Light-emitting unit, light-emitting unit assembly, and lighting apparatus produced using a plurality of light-emitting units
CN1368764A (en) * 2001-01-31 2002-09-11 广镓光电股份有限公司 Structure of hihg-brightness blue light emitting crystal grain
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6541800B2 (en) * 2001-02-22 2003-04-01 Weldon Technologies, Inc. High power LED
CN1185720C (en) * 2001-03-05 2005-01-19 全新光电科技股份有限公司 LED with substrate coated with metallic reflection film and its preparing process
CN1212676C (en) * 2001-04-12 2005-07-27 松下电工株式会社 Light source device using LED, and method of producing same
US20020151941A1 (en) * 2001-04-16 2002-10-17 Shinichi Okawa Medical illuminator, and medical apparatus having the medical illuminator
JP3940596B2 (en) * 2001-05-24 2007-07-04 松下電器産業株式会社 Illumination light source
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP2002374007A (en) * 2001-06-15 2002-12-26 Toyoda Gosei Co Ltd Light-emitting apparatus
TW552726B (en) * 2001-07-26 2003-09-11 Matsushita Electric Works Ltd Light emitting device in use of LED
JP3912090B2 (en) * 2001-12-04 2007-05-09 ソニー株式会社 Display device and portable terminal device using the same
CN1218410C (en) * 2002-01-14 2005-09-07 联铨科技股份有限公司 Nitride LED with spiral metal electrode and its making process
ITUD20020059A1 (en) * 2002-03-12 2003-09-12 Seima Italiana Spa OPTICAL LIGHTING DEVICE AND METHOD OF PRODUCTION OF LIGHTING DEVICES OR SIMILAR ADOPTING SUCH DEVICE
US6791120B2 (en) * 2002-03-26 2004-09-14 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
CN1198339C (en) * 2002-04-04 2005-04-20 国联光电科技股份有限公司 Structure of light-emitting diode and method for making the same
CN2548263Y (en) * 2002-04-20 2003-04-30 富士康(昆山)电脑接插件有限公司 Optical element packing case
TW546799B (en) * 2002-06-26 2003-08-11 Lingsen Precision Ind Ltd Packaged formation method of LED and product structure
US7078737B2 (en) * 2002-09-02 2006-07-18 Matsushita Electric Industrial Co., Ltd. Light-emitting device
US7264378B2 (en) * 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
AU2003276867A1 (en) * 2002-09-19 2004-04-08 Cree, Inc. Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor
US6869753B2 (en) * 2002-10-11 2005-03-22 Agilent Technologies, Inc. Screen printing process for light emitting base layer
US7465414B2 (en) 2002-11-14 2008-12-16 Transitions Optical, Inc. Photochromic article
US20060056031A1 (en) * 2004-09-10 2006-03-16 Capaldo Kevin P Brightness enhancement film, and methods of making and using the same
EP2264798B1 (en) * 2003-04-30 2020-10-14 Cree, Inc. High powered light emitter packages with compact optics
US7005679B2 (en) * 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US7482638B2 (en) * 2003-08-29 2009-01-27 Philips Lumileds Lighting Company, Llc Package for a semiconductor light emitting device
US7029935B2 (en) * 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7183587B2 (en) * 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7190387B2 (en) * 2003-09-11 2007-03-13 Bright View Technologies, Inc. Systems for fabricating optical microstructures using a cylindrical platform and a rastered radiation beam
US7192692B2 (en) * 2003-09-11 2007-03-20 Bright View Technologies, Inc. Methods for fabricating microstructures by imaging a radiation sensitive layer sandwiched between outer layers
US7867695B2 (en) * 2003-09-11 2011-01-11 Bright View Technologies Corporation Methods for mastering microstructures through a substrate using negative photoresist
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP4458804B2 (en) * 2003-10-17 2010-04-28 シチズン電子株式会社 White LED
US6841804B1 (en) * 2003-10-27 2005-01-11 Formosa Epitaxy Incorporation Device of white light-emitting diode
DE602004028648D1 (en) * 2003-11-25 2010-09-23 Panasonic Elec Works Co Ltd LIGHT-EMITTING COMPONENT WITH A LIGHT DIODE CHIP
US20050168689A1 (en) * 2004-01-30 2005-08-04 Knox Carol L. Photochromic optical element
US7808706B2 (en) * 2004-02-12 2010-10-05 Tredegar Newco, Inc. Light management films for displays
US7262912B2 (en) * 2004-02-12 2007-08-28 Bright View Technologies, Inc. Front-projection screens including reflecting layers and optically absorbing layers having apertures therein, and methods of fabricating the same
US7355284B2 (en) * 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
JP4980570B2 (en) * 2005-02-01 2012-07-18 富士通東芝モバイルコミュニケーションズ株式会社 Electronic equipment and illumination member
US20060285332A1 (en) 2005-06-15 2006-12-21 Goon Wooi K Compact LED package with reduced field angle
KR20070007648A (en) * 2005-07-11 2007-01-16 삼성전자주식회사 Two-way light transmission reflective-transmissive prism sheet and two-way back light assembly and liquid crystal display device comprising the same
US7324276B2 (en) * 2005-07-12 2008-01-29 Bright View Technologies, Inc. Front projection screens including reflecting and refractive layers of differing spatial frequencies
JPWO2007026776A1 (en) 2005-08-30 2009-03-12 三菱レイヨン株式会社 Light deflection sheet and manufacturing method thereof
US7622803B2 (en) 2005-08-30 2009-11-24 Cree, Inc. Heat sink assembly and related methods for semiconductor vacuum processing systems
WO2007061815A1 (en) 2005-11-18 2007-05-31 Cree, Inc. Solid state lighting device
US7502169B2 (en) * 2005-12-07 2009-03-10 Bright View Technologies, Inc. Contrast enhancement films for direct-view displays and fabrication methods therefor
US7420742B2 (en) * 2005-12-07 2008-09-02 Bright View Technologies, Inc. Optically transparent electromagnetic interference (EMI) shields for direct-view displays
US7213940B1 (en) * 2005-12-21 2007-05-08 Led Lighting Fixtures, Inc. Lighting device and lighting method
CN101460779A (en) * 2005-12-21 2009-06-17 科锐Led照明技术公司 Lighting device
BRPI0620397A2 (en) 2005-12-22 2011-11-16 Cree Led Lighting Solutions lighting device
JP2009524247A (en) * 2006-01-20 2009-06-25 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Shifting spectral content in solid-state light-emitting devices by spatially separating Lumiphor films
US8513875B2 (en) 2006-04-18 2013-08-20 Cree, Inc. Lighting device and lighting method
US7777166B2 (en) * 2006-04-21 2010-08-17 Cree, Inc. Solid state luminaires for general illumination including closed loop feedback control
US7722220B2 (en) * 2006-05-05 2010-05-25 Cree Led Lighting Solutions, Inc. Lighting device
JP2009538532A (en) 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Lighting device
EP2027602A4 (en) * 2006-05-23 2012-11-28 Cree Inc Lighting device and method of making
JP2009538536A (en) 2006-05-26 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Solid state light emitting device and method of manufacturing the same
US8596819B2 (en) 2006-05-31 2013-12-03 Cree, Inc. Lighting device and method of lighting
US7763478B2 (en) * 2006-08-21 2010-07-27 Cree, Inc. Methods of forming semiconductor light emitting device packages by liquid injection molding
WO2008024385A2 (en) * 2006-08-23 2008-02-28 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
CN101675298B (en) * 2006-09-18 2013-12-25 科锐公司 Lighting devices, lighting assemblies, fixtures and methods using same
WO2008036873A2 (en) * 2006-09-21 2008-03-27 Cree Led Lighting Solutions, Inc. Lighting assemblies, methods of installing same, and methods of replacing lights
JP5351034B2 (en) * 2006-10-12 2013-11-27 クリー インコーポレイテッド LIGHTING DEVICE AND MANUFACTURING METHOD THEREOF
WO2008051957A2 (en) * 2006-10-23 2008-05-02 Cree Led Lighting Solutions, Inc. Lighting devices and methods of installing light engine housings and/or trim elements in lighting device housings
US8029155B2 (en) * 2006-11-07 2011-10-04 Cree, Inc. Lighting device and lighting method
TWI496315B (en) * 2006-11-13 2015-08-11 Cree Inc Lighting device, illuminated enclosure and lighting methods
CN101611258A (en) * 2006-11-14 2009-12-23 科锐Led照明科技公司 Light engine assemblies
WO2008061084A1 (en) * 2006-11-14 2008-05-22 Cree Led Lighting Solutions, Inc. Lighting assemblies and components for lighting assemblies
US8096670B2 (en) * 2006-11-30 2012-01-17 Cree, Inc. Light fixtures, lighting devices, and components for the same
WO2008070607A1 (en) * 2006-12-04 2008-06-12 Cree Led Lighting Solutions, Inc. Lighting assembly and lighting method
WO2008070604A1 (en) * 2006-12-04 2008-06-12 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
US7709853B2 (en) * 2007-02-12 2010-05-04 Cree, Inc. Packaged semiconductor light emitting devices having multiple optical elements
US9061450B2 (en) * 2007-02-12 2015-06-23 Cree, Inc. Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
US7964888B2 (en) * 2007-04-18 2011-06-21 Cree, Inc. Semiconductor light emitting device packages and methods
US7967480B2 (en) 2007-05-03 2011-06-28 Cree, Inc. Lighting fixture
TWI448644B (en) 2007-05-07 2014-08-11 Cree Inc Light fixtures
CN101711326B (en) 2007-05-08 2012-12-05 科锐公司 Lighting device and lighting method
US7999283B2 (en) 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
US20090108269A1 (en) * 2007-10-26 2009-04-30 Led Lighting Fixtures, Inc. Illumination device having one or more lumiphors, and methods of fabricating same
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US8177382B2 (en) * 2008-03-11 2012-05-15 Cree, Inc. Apparatus and methods for multiplanar optical diffusers and display panels for using the same

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168102A (en) * 1976-10-12 1979-09-18 Tokyo Shibaura Electric Co., Ltd. Light-emitting display device including a light diffusing bonding layer
US4152618A (en) * 1977-04-05 1979-05-01 Tokyo Shibaura Electric Co., Ltd. Light-emitting display device including light diffusing film
JPS5776885A (en) * 1980-10-31 1982-05-14 Nec Corp Optical semiconductor device
JPH08116094A (en) * 1994-10-14 1996-05-07 Shichizun Denshi:Kk Surface mount type light emitting element
JPH11251638A (en) * 1998-03-03 1999-09-17 Yamaha Corp Brightness adjustable device
US20030209714A1 (en) * 2000-10-12 2003-11-13 General Electric Company Solid state lighting device with reduced form factor including led with directional emission and package with microoptics
US20020088987A1 (en) * 2000-12-26 2002-07-11 Kazunori Sakurai Optical device and method for manufacturing the same, and electronic apparatus
WO2003007663A1 (en) * 2001-07-10 2003-01-23 Trustees Of Princeton University Micro-lens arrays for display intensity enhancement
JP2003318448A (en) * 2002-02-19 2003-11-07 Nichia Chem Ind Ltd Light emitting device and its forming method
US20040130912A1 (en) * 2002-12-20 2004-07-08 Citizen Electronics Co., Ltd. Light guide plate and support unit for the same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 006, no. 155 (E-125), 17 August 1982 (1982-08-17) & JP 57 076885 A (NEC CORP), 14 May 1982 (1982-05-14) *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 09, 30 September 1996 (1996-09-30) & JP 08 116094 A (SHICHIZUN DENSHI:KK), 7 May 1996 (1996-05-07) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 14, 22 December 1999 (1999-12-22) & JP 11 251638 A (YAMAHA CORP), 17 September 1999 (1999-09-17) *
PATENT ABSTRACTS OF JAPAN vol. 2003, no. 12, 5 December 2003 (2003-12-05) & JP 2003 318448 A (NICHIA CHEM IND LTD), 7 November 2003 (2003-11-07) *

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006148051A (en) * 2004-06-30 2006-06-08 Mitsubishi Chemicals Corp Light emitting device, backlight unit for illumination and display device and display device
US8598606B2 (en) 2004-10-25 2013-12-03 Cree, Inc. Solid metal block semiconductor light emitting device mounting substrates and packages
EP2151873A3 (en) * 2004-10-25 2010-03-24 Cree, Inc. Solid metal block semiconductor light emitting device mounting substrates and packages
US7906793B2 (en) 2004-10-25 2011-03-15 Cree, Inc. Solid metal block semiconductor light emitting device mounting substrates
US7863642B2 (en) 2005-08-24 2011-01-04 Koninklijke Philips Electronics N.V. Light emitting diodes and lasers diodes with color converters
WO2007023411A1 (en) * 2005-08-24 2007-03-01 Philips Intellectual Property & Standards Gmbh Light emitting diodes and lasers diodes with color converters
EP1850399A1 (en) * 2006-04-25 2007-10-31 ILED Photoelectronics Inc. Sealing structure for a white light emitting diode
JP2009538532A (en) * 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Lighting device
EP2038939A1 (en) * 2006-06-27 2009-03-25 Cree, Inc. Efficient emitting led package and method for efficiently emitting light
EP2038939B1 (en) * 2006-06-27 2016-07-13 Cree, Inc. Efficient emitting led package and method for efficiently emitting light
JP2010533976A (en) * 2007-07-18 2010-10-28 キユーデイー・ビジヨン・インコーポレーテツド Quantum dot-based light sheet useful for solid-state lighting
EP2216585A1 (en) * 2007-12-07 2010-08-11 Sony Corporation Light source apparatus and display apparatus
EP2216585A4 (en) * 2007-12-07 2011-04-06 Sony Corp Light source apparatus and display apparatus
US8770773B2 (en) 2007-12-07 2014-07-08 Dexerials Corporation Light source device and display device
US8525207B2 (en) 2008-09-16 2013-09-03 Osram Sylvania Inc. LED package using phosphor containing elements and light source containing same
WO2012128911A1 (en) * 2011-03-18 2012-09-27 Osram Sylvania Inc. Led package using phosphor containing elements and light source containing same
WO2012135502A1 (en) * 2011-03-31 2012-10-04 Xicato, Inc. Grid structure on a transmissive layer of an led-based illumination module
US8899767B2 (en) 2011-03-31 2014-12-02 Xicato, Inc. Grid structure on a transmissive layer of an LED-based illumination module
WO2012154446A1 (en) * 2011-05-12 2012-11-15 3M Innovative Properties Company Optical structure for remote phosphor led

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