WO2005098942A1 - Ai/ain接合体、パワーモジュール用基板及びパワーモジュール並びにai/ain接合体の製造方法 - Google Patents
Ai/ain接合体、パワーモジュール用基板及びパワーモジュール並びにai/ain接合体の製造方法 Download PDFInfo
- Publication number
- WO2005098942A1 WO2005098942A1 PCT/JP2005/006618 JP2005006618W WO2005098942A1 WO 2005098942 A1 WO2005098942 A1 WO 2005098942A1 JP 2005006618 W JP2005006618 W JP 2005006618W WO 2005098942 A1 WO2005098942 A1 WO 2005098942A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power module
- substrate
- brazing material
- a1za1n
- joined body
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/963—Surface properties, e.g. surface roughness
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/08—Non-oxidic interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/121—Metallic interlayers based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
- C04B2237/128—The active component for bonding being silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/55—Pre-treatments of a coated or not coated substrate other than oxidation treatment in order to form an active joining layer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/59—Aspects relating to the structure of the interlayer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/91—Product with molecular orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49163—Manufacturing circuit on or in base with sintering of base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12472—Microscopic interfacial wave or roughness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12993—Surface feature [e.g., rough, mirror]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
Definitions
- A1ZA1N bonded body power module substrate and power module, and method for manufacturing A1ZA1N bonded body
- the present invention relates to an A1ZA1N joined body, a power module substrate, a power module, and a method for producing an A1ZA1N joined body used in a semiconductor device that controls a large current and a large voltage, such as an electric vehicle and an electric vehicle.
- Patent Document 2 JP 2002-171037 A
- a power module 40 as shown in Fig. 9 is known as an example.
- this power module 40 two power module boards 41 are joined on a radiator 31 by brazing material 33, solder, or the like, and the radiator 31 is screwed on a water-cooled heat sink 37 using a male screw 36. Fixed.
- the first module substrate 41 is formed by laminating a circuit layer 43 that also has an A1 force on one surface of an insulating substrate (hereinafter, referred to as an A1N substrate) 42 that also has an A1N force, and a metal layer that also has an A1 force on the other surface.
- An A1NZA1 joined body 45 in which 44 are stacked and a semiconductor chip 35 mounted on the circuit layer 43 via solder 34 are provided.
- an A1NZA1 joined body using 4N—A1 (aluminum having a purity of 99% or more) may be used. Disclosure of the invention
- the first problem is that when a metal plate is bonded to a ceramic substrate, simply reducing the surface roughness of the ceramic substrate does not provide a sufficiently high bonding strength and cannot improve reliability. was there.
- A1 A1
- a boron nitride (BN) sheet for mold release is laminated and sintered above and below the A1N green sheet.
- BN adheres to the surface layer of the A1N substrate. Therefore, it is difficult to join the metal layer of A1 to the A1N substrate as it is.Before joining the circuit layer or metal layer of A1, it is necessary to remove the surface force BN of the A1N substrate by homing or the like. Is being done.
- a first object of the present invention is to provide a power module substrate and a power module capable of obtaining a high bonding strength between a metal plate and a ceramic substrate, in view of the above-mentioned problem. .
- a first object of the present invention is to provide a power module substrate and a power module capable of obtaining a high bonding strength between a metal plate and a ceramic substrate, in view of the above-mentioned problem. .
- Al is bonded to an A1N substrate, not only the initial bonding strength, but also peeling occurs between the insulating substrate and the radiator even if thermal expansion and contraction are repeated due to the action of a temperature cycle.
- A1NZA1 joint manufacturing method that ensures a sufficient heat-resistant cycle to prevent warping and cracking of the insulating substrate and radiator and provides a sufficient life, and high reliability manufactured using the A1NZA1 joint
- a second object is to provide a body, a power module substrate and a power module using the same.
- the power module substrate of the present invention is a power module substrate in which a metal plate and a ceramic substrate are bonded, and the ceramic substrate has a residual amount of a release agent at a bonding interface with the metal plate. Is less than 5 in the B amount (boron amount) by X-ray fluorescence analysis, and the region where the crystal grain distortion occurs at the bonding interface is 40% or less of the whole.
- the B amount by X-ray fluorescence analysis means the peak height of B-— ⁇ and A1-— ⁇ obtained by X-ray fluorescence analysis, and the peak height of BK a is ZA1—the peak height of Ka X 100000. Defined as the calculated value.
- the strain generation region is a dark region in a crystal grain observed at a bright-field image of a ceramic crystal grain at the interface by a TEM (transmission electron microscope), that is, a region where dislocations are present.
- the ceramic substrate has a residual amount of the release agent at the bonding interface with the metal plate of less than 5 in terms of the B amount, and the entire region where the crystal grains are strained at the bonding interface. Therefore, high bonding strength can be obtained even in the initial state and after the temperature cycle test.
- the reason why the residual amount of the release agent at the bonding interface with the metal plate was set to less than 5 in terms of the B amount by X-ray fluorescence analysis is included when sintering the ceramic substrate! For example, it is to prevent a large amount of BN (boron nitride) from remaining and deteriorating the bondability.
- the power module substrate of the present invention is a single module substrate in which a metal plate and a ceramic substrate are joined together, and the ceramic substrate is provided with a release agent at a joint interface with the metal plate. Residual amount is less than 5 in the amount of B by X-ray fluorescence analysis and It is characterized in that the amount of strain of crystal grains at the joint interface is 0.03% or less.
- the ceramic substrate is such that the amount of the release agent remaining at the bonding interface with the metal plate is less than 5 as the B amount by X-ray fluorescence analysis, and the crystal grains at the bonding interface. Since the amount of strain (crystal size by X-ray diffraction and the amount of strain measured by lattice non-uniform strain) is 0.03% or less, as described later, even after the initial state and the temperature cycle test, The joining strength can be obtained.
- the metal plate may be an aluminum plate
- the ceramic substrate may be an aluminum nitride plate or a key nitride plate.
- the power module of the present invention is a power module in which a semiconductor chip is mounted on a metal plate of the power module substrate.
- the A1ZA1N joined body of the present invention is an A1ZA1N joined body obtained by joining A1 and A1N via a brazing material, wherein the brazing material is infiltrated into a porous layer on the surface of the A1N, At least a part of the infiltrated brazing material has a three-dimensional network structure in the range of about 0.5 to 3 layers of the A1N crystal structure.
- the brazing material infiltrated into the porous layer on the A1N surface that is, the pores between the A1N crystal particles, has a three-dimensional network structure.
- the porous body on the A1N surface and the brazing material forming the three-dimensional network structure are firmly bonded to each other, so that A1 and the brazing material are securely joined to A1N.
- the brazing material wraps around to the back of the A1N crystal and bites tightly.
- the brazing material used for bonding can be reduced and delamination due to temperature cycling can be suppressed. Therefore, high bonding strength can be ensured not only in the initial bonding but also after the heat cycle.
- the thickness of the three-dimensional network structure of the infiltrated brazing material may be increased from the surface of the A1N toward the inside of the A1N. That is, the three-dimensional network structure may be narrowed on the surface side of A1N.
- a power module substrate according to another aspect of the present invention is a power module substrate including an insulating substrate and a radiator provided on one surface side of the insulating substrate.
- the A1ZA1N conjugate is used.
- a chip is mounted on the other surface side of the insulating substrate of the power module substrate.
- An air-cooled or liquid-cooled heat sink may be provided on the one surface side of the insulating substrate.
- These power module substrates or power modules use an A1ZA1N joined body in which A1 and A1N are securely joined via a brazing material. High reliability. When a heat sink is provided, the cooling efficiency is further improved.
- the A1N green compact is sintered to form a porous layer on the surface thereof, and a brazing material is interposed between the porous layer of the obtained A1N sintered body. It is characterized by joining the two by joining the A1 materials.
- a porous layer is formed on the surface of the A1N sintered body joined to the A1 material via the brazing material. It penetrates into the pores of the porous layer of the A1N sintered body and solidifies in the pores. Therefore, the brazing material is entrapped inside the A1N sintered body, and the two are securely joined.
- the A1 material may be brazed after removing the fragile porous layer near the outermost layer surface of the A1N sintered body. In this case, the brazing material penetrates into the pores of the porous layer of the A1N sintered body.
- the fragile porous layer on the outermost layer surface of the A1N sintered body is processed and removed, and the surface layer of the A1N sintered body is not easily separated even when a force is applied to the joint surface. Therefore, peeling at the joining surface of the A1ZA1N joined body can be prevented.
- a method of manufacturing an A1ZA1N joined body according to another aspect of the present invention is characterized in that heating and pressurizing are performed in a state where a brazing material is disposed between the porous layer of the A1N sintered body and the A1 material.
- the A1ZA1N joined body is formed on the surface of the A1N sintered body by vacuum heating.
- the air in the pores of the porous layer thus removed is removed, so that the brazing material can easily enter the pores. Further, the bonding surface between the brazing material and the A1N sintered body is not easily oxidized. Further, by applying pressure, the brazing material can be pushed into the pores of the porous layer of the A1N sintered body against the surface tension of the brazing material.
- the bonding surface is placed in a vacuum state and then heated to generate a liquid phase in the brazing material, and further pressurized to impregnate the porous layer of the A1N sintered body with the liquid phase brazing material.
- a liquid phase is generated in the brazing material after the joining surface of the A1N sintered body is placed in a vacuum state, so that the porous layer formed on the surface of the A1N sintered body is formed. After the air in the pores is completely removed, the infiltration of the molten brazing material starts. Therefore, the brazing material permeates every corner in the pores of the porous layer. Further, by being pressed, the brazing material is pushed into small gaps in the pores against the surface tension of the brazing material.
- the A1N sintered body and the A1 material may be joined via the porous layer of the A1N sintered body by cooling and solidifying the melt of the brazing material placed between the A1ZA1Ns.
- the melt of the brazing material is cooled and solidified, whereby the A1N sintered body is sintered. It firmly adheres to the inside of the body's porous layer.
- the metal plate and the ceramic substrate constituting the power module substrate are joined with high strength, and have excellent reliability even in an environmental test such as a temperature cycle test. Therefore, high bonding strength can be obtained even in the initial state and after the temperature cycle test, and a power module having high reliability can be obtained even in an environment where temperature changes are severe.
- the A1ZA1N bonded body of the present invention not only the initial bonding strength but also peeling may occur between the insulating substrate and the radiator even if thermal expansion and contraction are repeated due to the action of the temperature cycle.
- a sufficient life cycle can be obtained by securing a heat-resistant cycle sufficient to prevent warping or cracking of the insulating substrate or the radiator. Therefore, a highly reliable A1NZA1 joined body, and a ceramic circuit board and a power module using the same can be obtained.
- FIG. 1 is a cross-sectional view illustrating a power module according to a first embodiment of the present invention.
- FIG. 2 is a graph showing distortion with respect to Houng conditions under the first embodiment of the present invention.
- FIG. 3 is a graph for explaining the relationship between the amount of residual BN and the amount of surface damage with respect to the degree of Hoening in the first embodiment of the present invention.
- FIG. 4 is a conceptual diagram showing an A1NZA1 conjugate according to a second embodiment of the present invention.
- FIG. 5 is a conceptual diagram showing a joint surface between an A1N insulator and A1 in a second embodiment of the present invention.
- FIG. 6 is a conceptual diagram showing an A1N insulator after green sintering according to a second embodiment of the present invention.
- FIG. 7 is a conceptual diagram showing an A1N insulator according to a second embodiment of the present invention.
- FIG. 8 is a conceptual diagram showing a power module substrate and a power module using an A1NZA1 assembly according to a third embodiment of the present invention.
- FIG. 9 is a conceptual diagram showing a power module substrate and a power module using a conventional A1NZA1 joined body.
- FIGS. 1 and 2 a first embodiment of a power module substrate and a power module according to the present invention will be described with reference to FIGS. 1 and 2.
- the power module substrate and the power module using the power module according to the present embodiment mount a Si chip (semiconductor chip) 5 having a power element for power supply.
- Si chip semiconductor chip
- the structure of the power module substrate and the power module will be described together with the manufacturing process.
- A1N ceramic substrate 1 for example, 50mm X 30mm, thickness 0.635mm
- Al for example, purity 99.9% or more
- metal circuit board 2 for example, purity 99.9% or more
- A1 for example, purity 99.9% or more
- metal for example, purity 99.9% or more
- brazing material for example, A1-Si foil, 50 mm X 30 mm, thickness 0.1 mm or less.
- the strain generation region is a region in which a dark portion in a crystal grain, that is, a crystal having a dislocation portion of 40% or more is observed by TEM (transmission electron microscope) observation (bright field image) of the ceramic crystal grain at the interface.
- the amount of the release agent remaining at the bonding interface between the ceramic substrate 1 and the metal circuit board 2 is reduced to less than 5 by the amount of B by X-ray fluorescence analysis, and as shown in FIG.
- the crystallite size due to folding and the amount of strain determined by measuring the lattice non-uniform strain may be 0.03% or less.
- the metal circuit board 2 is bonded to the upper surface of the ceramic substrate 1 via a brazing material, and the A1 metal plate 3 is similarly bonded to the lower surface of the ceramic substrate 1 via the same brazing material.
- the brazing material is laminated between the ceramic substrate 1 and the metal circuit board 2 and the metal plate 3, and bonded by applying a load and heating at 600 ° C. or higher in a vacuum or a reducing atmosphere.
- a resist is printed on the metal circuit board 2 of the A1ZA1NZA1 joined body thus obtained, a predetermined circuit pattern is formed by etching, and a power module substrate is manufactured.
- a Si chip 5 is adhered to the upper surface of the metal circuit board 2 of the power module substrate with a solder 8, and the power module substrate is soldered onto the heat sink 4 via the metal plate 3. Glue with 8.
- the power module of the present embodiment is manufactured.
- the residual amount of the release agent at the bonding interface between the ceramic substrate 1 and the metal circuit board 2 is less than 5 as the B amount by X-ray fluorescence analysis, and
- the region where the crystal grain strain occurs at the bonding interface is 40% or less of the whole or the crystal grain strain is 0.03% or less, the bonding strength after the temperature cycle test is higher than the test result of the example described later. Strength can be obtained.
- the residual amount of the release agent at the bonding interface between the ceramic substrate 1 and the metal circuit board 2 is less than 5 in terms of the B amount by X-ray fluorescence analysis, the release amount included in sintering the ceramic substrate 1 It is possible to prevent a large amount of BN of the mold agent from remaining at the interface and deteriorating the bondability.
- Fig. 3 there is a trade-off between the residual amount of the release agent and the amount of damage on the surface (joining interface) of the ceramic substrate 1 depending on the degree of honing, and the residual amount and the amount of damage are small. This is because high bonding strength can be obtained in the ⁇ state.
- FIG. 4 is a cross-sectional view showing an A1NZA1 joined body (insulating substrate) 10 according to a second embodiment of the present invention.
- A1 plates (conductive layers) 12 and 13 are joined via a brazing material layer 14.
- the A1N substrate 11 of the A1NZA1 joined body 10 is formed in a desired size, and is, for example, about 0.3 to 1.5 mm.
- the shape of the A1NZA1 joined body 10 is generally rectangular, but may be other shapes. These configurations can also be applied to the first embodiment described above.
- the A1 plates 12 and 13 contain 99.99% by mass or more of A1. A1 content of 99.99 mass% or less By setting the upper side, the stress relaxation effect of the A1 plates 12 and 13 is improved, and the warpage of the A1 NZA1 joined body 10 and the cracking of the A1N substrate 11 when exposed to a temperature change are suppressed.
- the thickness of the A1 plates 12 and 13 is not limited, but is, for example, 0.25 to 0.6 mm.
- the A1N substrate 11 has a thickness of, for example, 0.635 mm
- the A1 plates 12, 13 have a thickness of, for example, 0.4 mm.
- the A1 plates 12 and 13 may be bonded to the entire surface of the A1N substrate 11, or may be formed only in a portion excluding the peripheral portion of the A1N substrate 11, as shown in FIG. These configurations can be applied to the first embodiment described above.
- the thickness of the brazing material 14 is not limited, but is, for example, 0.005 to 0.05 mm. A more specific example is about 0.03 mm.
- the material of the brazing material 14 is not limited, but is preferably an Al—Si system, an Al—Ge system, an Al—Mn system, an Al—Cu system, an Al—Mg system, an Al—Si—Mg system, or an A1 Cu—Mn system. , And one or more selected from aluminum alloy brazing materials such as Al-Cu-Mg-Mn.
- the A1 content of each brazing material is 70 to 98% by mass. Among these, an Al—Si brazing material is particularly preferable.
- Al-Si brazing material is an alloy containing 95 to 75% by mass of Al and 3 to 20% by mass of Si, and has a melting point (eutectic point) of 577 ° C. These configurations can be applied to the first embodiment described above.
- the A1ZA1N joined body 10 has a porous layer 21 on its surface, and at least a part of a space (pore) forming the porous body has a three-dimensional network structure.
- the void force forming the three-dimensional network structure becomes wider as the force moves from the surface of the A1N material to the inside of the A1N material.
- the region having the three-dimensional network structure is approximately 0.5 layer or more and three layers or less of the A1N crystal, and the pores (voids) forming the three-dimensional network structure are impregnated with the brazing material 14 and solidified.
- one layer indicates a thickness corresponding to the particle size of A1N crystal grains, and the particle size of A1N crystal grains is about 1 ⁇ m or more and about 15 ⁇ m or less.
- the thicknesses of the A1 plates 12 and 13 joined to the front and back of the insulated EA1N substrate 11 be equal.
- the A1 plates 12 and 13 are preferably bonded to both sides of the EA1N substrate 11. If the thickness is different, or if the A1 plate is bonded to only one side, the EA1N substrate 11 is likely to be warped. However, it may be applied to only one side if necessary
- the porous layer 21 is formed. Since some of the holes have a three-dimensional network structure, the crystal grains of the A1N substrate 11 and the brazing material 14 filled in the pores of the three-dimensional network structure engage with each other, and the A1 plates 12, 13 and the A1N substrate 11 is securely joined.
- brazing filler metal 14 is dispersed and bonded in the three-dimensional network structure, the stress of the A1N surface, the A1 plate and the A1N substrate that constitute the A1ZA1N bonded body, and the stress of the A1N surface crystal grains even if the A1N substrate repeatedly expands and contracts
- the joints are dispersed at the anchor portion, and stable joining can be ensured not only at the initial joining of the joined body but also after the thermal sitar.
- the brazing material wraps around to the back of the A1N crystal and bites.
- pores up to the range corresponding to approximately three layers of crystal grains as a three-dimensional network structure and not using a fragile layer deep in the A1N substrate, it is possible to reduce the amount of brazing material used and suppress peeling due to temperature cycles. Is done.
- the brazing material is securely joined to the A1N by the anchor effect. As a result, peeling due to a temperature cycle can be suppressed.
- the A1N substrate 11 has a porous layer 21 in which at least a part of its surface forms a three-dimensional network structure (not shown), and a fragile porous layer 23 formed on the surface of the porous layer 21.
- the surface layer of the material 22 of the A1N substrate after sintering is hollowed to remove BN (not shown) attached to the surface layer of the A1N substrate 11 and to form the BN on the outermost surface of the A1N substrate 11
- the fragile porous layer 23 thus removed is removed. If necessary, the fragile porous layer 23 may be ground before hoeing.
- Houng uses a pressure of 500 hPa (0.
- the maximum roughness Ry (jl S B0601—1994) is obtained under the conditions of not less than 49 KgZcm 2 ) and not more than 2500 hPa (2.47 KgZcm 2 ), so that the force becomes 50 to 3.30 m.
- the honing pressure to 2500 hPa or less, as shown in FIG. 7, it is suppressed that the surface irregularities of the crystal structure of the porous layer 21 of the surface layer of the A1N substrate 11 are crushed and become flat.
- the Houning pressure to 500 hPa or more, the BN after the porous layer of the A1N surface layer is green-sintered can be sufficiently removed, and the A1N substrate 11 has an opening through which the brazing material enters the surface layer. Sufficiently formed between the particles, the penetration of the brazing material is facilitated, and the surface irregularities of the crystal structure of the porous layer 21 are maintained.
- a sheet-shaped brazing material 14, an A1N substrate 11, a sheet-shaped brazing material 14, and an A1 plate 12 are sequentially stacked on the A1 plate 13. These are heated in a vacuum to a temperature of 600 ° C. or more and a melting point of the A1 plates 12 and 13 to melt the brazing material 14 to a liquid phase.
- a pressure of 50 to 3001 ⁇ 1 ⁇ 2 (approximately 0.5 to 3 kg / cm 2) is applied to the joint surface between the A1 plates 12 and 13 and the substrate 11, and the holes in the three-dimensional network structure (vacuum state
- the brazing material 14 in the liquid phase is infiltrated into the pores that have been made into a liquid phase, and then the melt is cooled to about 500 ° C at a cooling rate of 0.5 to 1.0 ° CZ.
- the A1N substrate 11 and the A1 plates 12 and 13 are joined via the A1N porous layer 21.
- the pressure at the time of bonding is appropriately 50 kPa or more in order to prevent uneven bonding, and is preferably 300 kPa or less from the viewpoint of preventing cracking of the A1N substrate 11 during bonding.
- a liquid phase is surely generated in the brazing material. 600 ° C or more Force
- the substrate After brazing, the substrate is cooled to room temperature, and then the A1 plates 12 and 13 on one side are etched in a predetermined pattern to form a circuit, thereby obtaining a power module substrate.
- the brazing material 14 since the porous layer 21 is previously formed on the surface of the A1N substrate 11 to be joined to the A1 plates 12 and 13, When the A1 plates 12 and 13 are joined, the brazing material 14 becomes a liquid phase and penetrates into the pores of the porous layer 21 of the A1N substrate 11 and solidifies, so that the brazing material 14 reliably eats into the A1N substrate 11. It is securely joined.
- the brazing material bites into the A1N joint surface very strongly, so that even if force is applied to the joint surface, the A1N surface Since the surface layer is difficult to peel off, the peeling of the bonding surface of the A1ZA1N bonded body is suppressed.
- the brazing material 14 is placed on the surface of the A1N substrate 11 that contacts the A1 plates 12 and 13, the pressure and vacuum heating are performed, so that the air in the pores of the porous layer 21 formed on the surface of the A1N substrate 11 Is removed, and penetration of the brazing material 14 into the pores is facilitated. Further, the bonding surface between the brazing material 14 and the A1N substrate 11 is not oxidized. Further, by applying pressure, the molten brazing material 14 is pushed into the pores against its surface tension.
- the brazing material is pushed into small gaps in the pores against the surface tension of the brazing material 14.
- the melt of the brazing material 14 is cooled and solidified, so that the brazing material 14 becomes The inside of the porous layer 21 of the substrate 11 is firmly fixed.
- FIG. 8 is a diagram showing the power module 30.
- the power module 30 includes one or more rectangular power module substrates 32 fixed to one main surface of a heat radiator 31 with a brazing material 33 and a power module.
- a semiconductor chip 35 is mounted on an upper surface of a substrate 32 by solder 34.
- the heat radiator 31 is a plate material that also has an A1-based alloy plate force, and its thickness is not limited.
- the substrate 32 for the first module may be the same as that of the second embodiment.
- an A1N substrate 11 having a thickness of 0.3 to 1.5 mm, and first and second A1 plates 12 and 13 joined to both surfaces of the A1N substrate 11 are provided.
- the first and second A1 plates 12, 13 are, for example, 0.25-0.6 mm thick. Is done.
- the power module substrate 32 has, for example, a rectangular shape with a side of 30 mm or less.
- the power module substrate 32 is brazed to the radiator 31 with a brazing material.
- a brazing material it is preferable to use one or two or more of Al-Si-based, Al-Cu-based, Al-Mg-based, Al-Mn-based and Al-Ge-based brazing materials.
- a sheet of an opening material and the power module substrate 32 are stacked in this order on the radiator 31, a load of 50 to 300 kPa is applied to them, and a vacuum is applied.
- the melting point of the brazing material 33 is preferably 500 to 630 ° C., which is lower than the melting point of the brazing material 14, for example, about 575 ° C. (however, the melting point is a point beyond the liquidus).
- the brazing material 14 joining the A1N substrate 11 and the A1 plates 12 and 13 is not completely melted, and the radiator 31 and the first A1 plate 13 can be joined.
- male screws 36 are inserted into mounting holes formed in the corners of the heat radiator 31, and these male screws 36 are attached to female screws formed in the water-cooled heat sink 37.
- the heat sink 31 is tightly joined to a water-cooled heat sink 37 which also has the other surface force, for example, A1 alloy force.
- the power module 30 configured as described above has the same effects as the above-described second embodiment.
- the difference in the amount of shrinkage at the edge of the first module substrate 32 generated during a thermal cycle can be suppressed to a relatively small amount, and the thermal cycle life of the power module 30 can be extended. Can be. As a result, the reliability as a power module can be improved.
- the power module substrate according to the present invention will be specifically described with reference to examples.
- samples of A1N ceramic substrate l 50 mm ⁇ 30 mm, thickness of 0.635 mm
- A1 metal circuit board 2 100 mm x 5 mm width, thickness 0.4 mm
- A1 metal plate 3 50 mm X 30mm width, thickness 0.4mm
- A1-Si foil 5 Omm X 5 mm width, thickness 0.1 mm
- the joining was performed by applying a load and heating in a vacuum or a reducing atmosphere at 600 ° C or more.
- a portion other than the joint portion of the metal circuit board 2 of A1 was bent at 90 degrees to obtain a sample for the joint strength measurement (peeling method).
- the power module substrate manufactured from the above sample was evaluated by an ultrasonic inspection method in terms of the initial state and the bondability after a temperature cycle.
- the joint strength measurement sample also at the initial stage and after a temperature cycle (temperature cycle conditions: using equipment manufactured by Tabai Espec Corp., after 3,000 cycles at 40 ° C X 15 min to 125 ° C X 15 min (air tank))
- the bonding strength was measured.
- the bondability in the initial state and after temperature cycling is good enough if there is no peeling ( ⁇ ), the peeling is less than lmm at the end of the A1 joint ( ⁇ ), and the peeling is more than lmm. Was evaluated as insufficient (X).
- the amount of B was determined by X-ray fluorescence spectroscopy.
- the peak heights of BK and A1-K were determined, and the peak height of ⁇ - ⁇ / the peak height of Al-Ka ⁇ 100000.
- the peak height of each element in X-ray fluorescence spectroscopy was measured under the following conditions.
- Measurement 20 range: 64 to 128 °
- the ceramic substrate has a residual amount of the release agent at the bonding interface with the metal plate of less than 5 in B amount by X-ray fluorescence analysis, Since the area where crystal grain strain occurs is 40% or less of the whole or the amount of crystal grain strain at the joint interface is 0.03% or less, high bonding strength can be obtained even in the initial state and after a temperature cycle test. . Therefore, it is possible to obtain a power module having high reliability even under severe environmental temperature changes and under environmental conditions.
- A1N substrate bonded by changing the pressure of Houng before bonding is subjected to a temperature cycle test (45 to 125 ° C), and the presence or absence of peeling is checked every 1000 cycles with an ultrasonic inspection device.
- the maximum number of temperature cycles was defined as the life.
- the depth of the three-dimensional network structure can be determined by observing the cross section near the A1NZA1 interface with a scanning electron microscope (SEM), and determining the penetration depth of Si contained in the A1 component into the A1N substrate by EPMA (electron beam analyzer). ) was measured by elemental surface analysis.
- the maximum roughness Ry was measured by a surface roughness meter (trade name: Surftest 501, manufactured by Mitutoyo), and the specific surface area was measured by a laser microscope (trade name: VK8550, manufactured by KEYENCE) at a magnification of 500 times.
- the depth of the three-dimensional network structure may be measured by heat-treating the sample to oxidize the A1 surface, and then measuring the penetration depth of the oxygen element by surface analysis.
- the sample whose A1 exposure has begun to be polished may be further polished, and the step until the A1N completely disappears may be defined as the penetration depth.
- the depth of the three-dimensional network structure is 0.2, 0.3, 4.0, and the maximum roughness, respectively.
- the specific surface area which is the ratio of the surface area in consideration of the unevenness of the substrate to the plane area of the substrate surface, is 2.0. It is less than or more than 2.7, indicating an unstable state. As a result, peeling after a temperature cycle occurred less than 2000 times (lifetime 1000 times).
- the depth of the three-dimensional network structure is 0.7 to 2.9 layers, the maximum roughness is 1.5 to 3.3 m, and the specific surface area is 2.0. ⁇ 2.7 are formed.
- the comparative example of the conventional product had a life of 1000 times, whereas in Examples 1 to 4, the peeling of the bonding surface did not occur until 3000 cycles, and the life was tripled.
- the force shown when the three-dimensional network structure is about three layers of the A1N crystal structure is approximately 0.5 to 3 As long as it exists in the range of layers!
- processing conditions described in the above embodiment are merely examples, and other processing conditions may be used.
- the power module substrate and the power module of the present invention high bonding strength between the metal plate and the ceramic substrate is obtained, and industrial applicability is recognized. Further, according to the method for manufacturing an A1NZA1 joined body according to the present invention, a highly reliable A1NZA1 joined body manufactured using the same, and a power module substrate and a power module using the same, a sufficient heat-resistant cycle is ensured. A sufficient life can be obtained.
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05728866A EP1737034A4 (en) | 2004-04-05 | 2005-04-04 | AI / AIN CONNECTING MATERIAL, BASE PLATE FOR A POWER MODULE, POWER MODULE AND PROCESS FOR PRODUCING AN AI / AIN COMPOUND MATERIAL |
JP2006512070A JP4918856B2 (ja) | 2004-04-05 | 2005-04-04 | パワーモジュール用基板及びパワーモジュール |
US10/599,622 US7532481B2 (en) | 2004-04-05 | 2005-04-04 | Al/AlN joint material, base plate for power module, power module, and manufacturing method of Al/AlN joint material |
KR1020067023091A KR101108454B1 (ko) | 2004-04-05 | 2005-04-04 | Al/AlN 접합체, 전력 모듈용 기판 및 전력 모듈, 그리고 Al/AlN 접합체의 제조 방법 |
US12/138,025 US20080248326A1 (en) | 2004-04-05 | 2008-06-12 | Ai/ain joint material, base plate for power module, power module, and manufacturing method of ai/ain joint material |
US12/784,330 US8164909B2 (en) | 2004-04-05 | 2010-05-20 | Al/AlN joint material, base plate for power module, power module, and manufacturing method of Al/AlN joint material |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004110879 | 2004-04-05 | ||
JP2004-110879 | 2004-04-05 | ||
JP2004-221700 | 2004-07-29 | ||
JP2004221700 | 2004-07-29 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/599,622 A-371-Of-International US7532481B2 (en) | 2004-04-05 | 2005-04-04 | Al/AlN joint material, base plate for power module, power module, and manufacturing method of Al/AlN joint material |
US12/138,025 Division US20080248326A1 (en) | 2004-04-05 | 2008-06-12 | Ai/ain joint material, base plate for power module, power module, and manufacturing method of ai/ain joint material |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005098942A1 true WO2005098942A1 (ja) | 2005-10-20 |
Family
ID=35125362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/006618 WO2005098942A1 (ja) | 2004-04-05 | 2005-04-04 | Ai/ain接合体、パワーモジュール用基板及びパワーモジュール並びにai/ain接合体の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7532481B2 (ja) |
EP (1) | EP1737034A4 (ja) |
JP (2) | JP4918856B2 (ja) |
KR (2) | KR101108454B1 (ja) |
WO (1) | WO2005098942A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007311529A (ja) * | 2006-05-18 | 2007-11-29 | Mitsubishi Materials Corp | パワーモジュール |
JP2008021716A (ja) * | 2006-07-11 | 2008-01-31 | Mitsubishi Materials Corp | パワーモジュール用基板の製造方法およびパワーモジュール用基板並びにパワーモジュール |
JP2008041945A (ja) * | 2006-08-07 | 2008-02-21 | Mitsubishi Materials Corp | パワーモジュール用基板の製造方法およびパワーモジュール用基板並びにパワーモジュール |
JP2008244118A (ja) * | 2007-03-27 | 2008-10-09 | Hitachi Metals Ltd | 半導体モジュール |
WO2009066692A1 (ja) * | 2007-11-19 | 2009-05-28 | Mitsubishi Materials Corporation | パワーモジュール用基板の製造方法、パワーモジュール用基板、及びパワーモジュール |
JP2009164413A (ja) * | 2008-01-08 | 2009-07-23 | Mitsubishi Materials Corp | パワーモジュール用基板及びパワーモジュール |
JP2010141056A (ja) * | 2008-12-10 | 2010-06-24 | Mitsubishi Materials Corp | セラミックス基板及びその製造方法 |
JP2012169318A (ja) * | 2011-02-10 | 2012-09-06 | Showa Denko Kk | 絶縁回路基板、ならびにパワーモジュール用ベースおよびその製造方法 |
JP2015046491A (ja) * | 2013-08-28 | 2015-03-12 | 住友電気工業株式会社 | ワイドバンドギャップ半導体装置および半導体モジュールの製造方法、ならびにワイドバンドギャップ半導体装置および半導体モジュール |
KR20160031497A (ko) * | 2013-08-26 | 2016-03-22 | 미쓰비시 마테리알 가부시키가이샤 | 접합체 및 파워 모듈용 기판 |
WO2023163061A1 (ja) * | 2022-02-25 | 2023-08-31 | 京セラ株式会社 | 配線基板、電子装置及び電子モジュール |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4014528B2 (ja) * | 2003-03-28 | 2007-11-28 | 日本碍子株式会社 | ヒートスプレッダモジュールの製造方法及びヒートスプレッダモジュール |
WO2006019099A1 (ja) * | 2004-08-17 | 2006-02-23 | Mitsubishi Materials Corporation | 絶縁基板、パワーモジュール用基板並びにそれらの製造方法およびそれらを用いたパワーモジュール |
JP4207896B2 (ja) * | 2005-01-19 | 2009-01-14 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
JP4378334B2 (ja) * | 2005-09-09 | 2009-12-02 | 日本碍子株式会社 | ヒートスプレッダモジュール及びその製造方法 |
TWI449137B (zh) * | 2006-03-23 | 2014-08-11 | Ceramtec Ag | 構件或電路用的攜帶體 |
US8198540B2 (en) * | 2006-06-06 | 2012-06-12 | Mitsubishi Materials Corporation | Power element mounting substrate, method of manufacturing the same, power element mounting unit, method of manufacturing the same, and power module |
JP4868547B2 (ja) * | 2006-06-08 | 2012-02-01 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 熱伝導モジュールとその製造方法、並びに、高熱伝導で柔軟なシートの製造方法 |
JP4629016B2 (ja) * | 2006-10-27 | 2011-02-09 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板およびヒートシンク付パワーモジュール用基板の製造方法並びにパワーモジュール |
WO2008083853A1 (de) * | 2007-01-10 | 2008-07-17 | Osram Gesellschaft mit beschränkter Haftung | Elektronisches bauelementmodul und verfahren zu dessen herstellung |
JP2010524698A (ja) * | 2007-04-24 | 2010-07-22 | セラムテック アクチエンゲゼルシャフト | 少なくとも1つの非プレート状の構成要素を備えた複合体を製造する方法 |
JP5181618B2 (ja) * | 2007-10-24 | 2013-04-10 | 宇部興産株式会社 | 金属箔積層ポリイミド樹脂基板 |
JP5070014B2 (ja) * | 2007-11-21 | 2012-11-07 | 株式会社豊田自動織機 | 放熱装置 |
JP2009130060A (ja) * | 2007-11-21 | 2009-06-11 | Toyota Industries Corp | 放熱装置 |
EP2296177B1 (en) * | 2008-06-06 | 2021-04-14 | Mitsubishi Materials Corporation | Method for manufacturing a power module substrate |
DE102008055134A1 (de) * | 2008-12-23 | 2010-07-01 | Robert Bosch Gmbh | Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils |
EP2477217B1 (en) * | 2009-09-09 | 2019-05-08 | Mitsubishi Materials Corporation | Method for producing substrate for power module with heat sink, substrate for power module with heat sink, and power module |
US9414512B2 (en) * | 2009-10-22 | 2016-08-09 | Mitsubishi Materials Corporation | Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module |
JP5515947B2 (ja) * | 2010-03-29 | 2014-06-11 | 株式会社豊田自動織機 | 冷却装置 |
CN102593009B (zh) * | 2011-01-11 | 2016-02-17 | 三菱综合材料株式会社 | 电源模块用基板的制造方法、电源模块用基板和电源模块 |
DE102011103746A1 (de) * | 2011-05-31 | 2012-12-06 | Ixys Semiconductor Gmbh | Verfahren zum Fügen von Metall-Keramik-Substraten an Metallkörpern |
JP5801639B2 (ja) * | 2011-07-28 | 2015-10-28 | 昭和電工株式会社 | 電子素子搭載用基板 |
JP5764506B2 (ja) * | 2012-02-08 | 2015-08-19 | 美濃窯業株式会社 | セラミックス多孔体−金属断熱材及びその製造方法 |
JP2013201256A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Lighting & Technology Corp | 配線基板装置、発光モジュール、照明装置および配線基板装置の製造方法 |
JP5614423B2 (ja) * | 2012-03-29 | 2014-10-29 | 三菱マテリアル株式会社 | パワーモジュール用基板及びその製造方法 |
JP2013229579A (ja) * | 2012-03-30 | 2013-11-07 | Mitsubishi Materials Corp | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板及びパワーモジュール |
JP6189015B2 (ja) * | 2012-04-19 | 2017-08-30 | 昭和電工株式会社 | 放熱装置および放熱装置の製造方法 |
TWI589382B (zh) | 2012-09-21 | 2017-07-01 | 三菱綜合材料股份有限公司 | 鋁構件與銅構件之接合構造 |
JP5614485B2 (ja) * | 2012-10-16 | 2014-10-29 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール、及びヒートシンク付パワーモジュール用基板の製造方法 |
KR102154882B1 (ko) | 2012-12-25 | 2020-09-10 | 미쓰비시 마테리알 가부시키가이샤 | 파워 모듈 |
EP2940720B1 (en) * | 2012-12-25 | 2021-04-14 | Mitsubishi Materials Corporation | Power module |
JP6085968B2 (ja) * | 2012-12-27 | 2017-03-01 | 三菱マテリアル株式会社 | 金属部材付パワーモジュール用基板、金属部材付パワーモジュール、及び金属部材付パワーモジュール用基板の製造方法 |
KR101429429B1 (ko) * | 2013-02-28 | 2014-08-11 | 주식회사 티앤머티리얼스 | 가압함침형 다층방열기판 및 그 제조방법 |
JP6201771B2 (ja) * | 2014-01-16 | 2017-09-27 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板の製造方法 |
CN106068251B (zh) * | 2014-03-07 | 2019-12-27 | 日本碍子株式会社 | 接合体的制造方法 |
JP6921532B2 (ja) * | 2014-03-07 | 2021-08-18 | 日本碍子株式会社 | 接合体の製造方法及び接合体 |
CN106165090B (zh) * | 2014-04-25 | 2020-07-03 | 三菱综合材料株式会社 | 功率模块用基板单元及功率模块 |
JP6790372B2 (ja) | 2016-02-05 | 2020-11-25 | 富士電機株式会社 | 半導体装置 |
WO2017217221A1 (ja) * | 2016-06-16 | 2017-12-21 | 三菱電機株式会社 | 半導体実装用放熱ベース板およびその製造方法 |
US20190157235A1 (en) * | 2016-07-28 | 2019-05-23 | Mitsubishi Electric Corporation | Semiconductor device |
KR102378938B1 (ko) | 2016-08-10 | 2022-03-25 | 주식회사 아모센스 | 고주파 기판의 제조 방법 |
JP6809294B2 (ja) * | 2017-03-02 | 2021-01-06 | 三菱電機株式会社 | パワーモジュール |
JP6911805B2 (ja) * | 2018-03-27 | 2021-07-28 | 三菱マテリアル株式会社 | ヒートシンク付き絶縁回路基板の製造方法 |
US10882130B2 (en) | 2018-04-17 | 2021-01-05 | Watlow Electric Manufacturing Company | Ceramic-aluminum assembly with bonding trenches |
US10971428B2 (en) | 2019-06-20 | 2021-04-06 | Semiconductor Components Industries, Llc | Semiconductor baseplates |
DE102019216605A1 (de) * | 2019-10-29 | 2021-04-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Formschlüssiger und/oder kraftschlüssiger Materialverbund |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH069275A (ja) * | 1992-06-25 | 1994-01-18 | Ngk Spark Plug Co Ltd | 窒化アルミニウム焼結体及びこれを用いた半導体装置用基板 |
JPH08109069A (ja) * | 1994-10-11 | 1996-04-30 | Toshiba Corp | 窒化アルミニウム焼結体 |
JPH1067586A (ja) * | 1996-08-27 | 1998-03-10 | Dowa Mining Co Ltd | パワーモジュール用回路基板およびその製造方法 |
JP2002171037A (ja) * | 2000-09-22 | 2002-06-14 | Toshiba Corp | セラミックス回路基板およびその製造方法 |
JP2003017627A (ja) * | 2001-06-28 | 2003-01-17 | Toshiba Corp | セラミックス回路基板およびそれを用いた半導体モジュール |
Family Cites Families (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4055451A (en) * | 1973-08-31 | 1977-10-25 | Alan Gray Cockbain | Composite materials |
JPS57181356A (en) * | 1981-04-30 | 1982-11-08 | Hitachi Ltd | Sintered aluminum nitride body with high heat conductivity |
EP0097944B1 (en) * | 1982-06-29 | 1988-06-01 | Kabushiki Kaisha Toshiba | Method for directly bonding ceramic and metal members and laminated body of the same |
US5165983A (en) * | 1984-09-30 | 1992-11-24 | Kabushiki Kaisha Toshiba | Method for production of aluminum nitride ceramic plate |
US4963409A (en) * | 1986-02-14 | 1990-10-16 | E. I. Du Pont De Nemours And Company | Stain resistant polymers and textiles |
EP0235682B2 (en) * | 1986-02-20 | 1997-11-12 | Kabushiki Kaisha Toshiba | Aluminium nitride sintered body having conductive metallized layer |
US5529852A (en) * | 1987-01-26 | 1996-06-25 | Sumitomo Electric Industries, Ltd. | Aluminum nitride sintered body having a metallized coating layer on its surface |
JPH01203270A (ja) * | 1988-02-08 | 1989-08-16 | Sumitomo Electric Ind Ltd | 高熱伝導性窒化アルミニウム焼結体及びその製造法 |
AU4504089A (en) | 1988-10-05 | 1990-05-01 | Michael Feygin | An improved apparatus and method for forming an integral object from laminations |
JPH03103369A (ja) * | 1989-09-13 | 1991-04-30 | Eagle Ind Co Ltd | セラミックス・金属接合体の製造方法 |
EP1020914B1 (en) * | 1989-10-09 | 2004-04-28 | Mitsubishi Materials Corporation | Ceramic substrate used for fabricating electric or electronic circuit |
JPH03234045A (ja) | 1990-02-09 | 1991-10-18 | Toshiba Corp | 窒化アルミニウム基板およびこれを用いた半導体モジュール |
DE69031039T2 (de) * | 1990-04-16 | 1997-11-06 | Denki Kagaku Kogyo Kk | Keramische leiterplatte |
JPH0585869A (ja) * | 1991-04-18 | 1993-04-06 | Nippon Steel Corp | 窒化アルミニウムセラミツクスの表面処理方法 |
US5213877A (en) * | 1991-05-02 | 1993-05-25 | Mitsubishi Materials Corporation | Ceramic substrate used for fabricating electric or electronic circuit |
WO2004074210A1 (ja) * | 1992-07-03 | 2004-09-02 | Masanori Hirano | セラミックス-金属複合体およびその製造方法 |
DE69517248T2 (de) * | 1994-07-15 | 2000-10-12 | Mitsubishi Materials Corp | Keramik-Gehäuse mit hoher Wärmeabstrahlung |
KR100232660B1 (ko) * | 1995-03-20 | 1999-12-01 | 니시무로 타이죠 | 질화규소 회로기판 |
JP4077888B2 (ja) * | 1995-07-21 | 2008-04-23 | 株式会社東芝 | セラミックス回路基板 |
US6033787A (en) * | 1996-08-22 | 2000-03-07 | Mitsubishi Materials Corporation | Ceramic circuit board with heat sink |
JP3512977B2 (ja) * | 1996-08-27 | 2004-03-31 | 同和鉱業株式会社 | 高信頼性半導体用基板 |
JP3682552B2 (ja) * | 1997-03-12 | 2005-08-10 | 同和鉱業株式会社 | 金属−セラミックス複合基板の製造方法 |
US6261703B1 (en) * | 1997-05-26 | 2001-07-17 | Sumitomo Electric Industries, Ltd. | Copper circuit junction substrate and method of producing the same |
JPH1135380A (ja) * | 1997-07-17 | 1999-02-09 | Toshiba Mach Co Ltd | セラミックスと金属の接合方法 |
JP3307862B2 (ja) * | 1997-10-06 | 2002-07-24 | 同和鉱業株式会社 | セラミック基板 |
JP3739913B2 (ja) * | 1997-11-06 | 2006-01-25 | ソニー株式会社 | 窒化アルミニウム−アルミニウム系複合材料及びその製造方法 |
JP4304749B2 (ja) * | 1998-02-24 | 2009-07-29 | 住友電気工業株式会社 | 半導体装置用部材の製造方法 |
JP3987201B2 (ja) * | 1998-05-01 | 2007-10-03 | 日本碍子株式会社 | 接合体の製造方法 |
JP2000082774A (ja) * | 1998-06-30 | 2000-03-21 | Sumitomo Electric Ind Ltd | パワ―モジュ―ル用基板およびその基板を用いたパワ―モジュ―ル |
JP4018264B2 (ja) * | 1998-10-16 | 2007-12-05 | Dowaホールディングス株式会社 | アルミニウム−窒化アルミニウム絶縁基板の製造方法 |
JP2001148451A (ja) * | 1999-03-24 | 2001-05-29 | Mitsubishi Materials Corp | パワーモジュール用基板 |
EP1056321B1 (en) * | 1999-05-28 | 2007-11-14 | Denki Kagaku Kogyo Kabushiki Kaisha | Ceramic substrate circuit and its manufacturing process |
JP2001044577A (ja) * | 1999-07-28 | 2001-02-16 | Denki Kagaku Kogyo Kk | 回路基板 |
EP1122780A3 (en) * | 2000-01-31 | 2004-01-02 | Ngk Insulators, Ltd. | Laminated radiation member, power semiconductor apparatus and method for producing the same |
US6888236B2 (en) * | 2000-03-07 | 2005-05-03 | Ibiden Co., Ltd. | Ceramic substrate for manufacture/inspection of semiconductor |
JP4756200B2 (ja) * | 2000-09-04 | 2011-08-24 | Dowaメタルテック株式会社 | 金属セラミックス回路基板 |
EP1201623B1 (en) * | 2000-10-27 | 2016-08-31 | Kabushiki Kaisha Toshiba | Silicon nitride ceramic substrate and silicon nitride ceramic circuit board using the substrate |
JP2002203932A (ja) * | 2000-10-31 | 2002-07-19 | Hitachi Ltd | 半導体パワー素子用放熱基板とその導体板及びヒートシンク材並びにロー材 |
JP4248173B2 (ja) * | 2000-12-04 | 2009-04-02 | 株式会社東芝 | 窒化アルミニウム基板およびそれを用いた薄膜基板 |
JP4015023B2 (ja) * | 2001-02-22 | 2007-11-28 | 日本碍子株式会社 | 電子回路用部材及びその製造方法並びに電子部品 |
JP4434545B2 (ja) * | 2001-03-01 | 2010-03-17 | Dowaホールディングス株式会社 | 半導体実装用絶縁基板及びパワーモジュール |
US7069645B2 (en) * | 2001-03-29 | 2006-07-04 | Ngk Insulators, Ltd. | Method for producing a circuit board |
JP3559252B2 (ja) * | 2001-05-02 | 2004-08-25 | 日本特殊陶業株式会社 | スパークプラグの製造方法 |
US6692818B2 (en) * | 2001-06-07 | 2004-02-17 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing circuit board and circuit board and power conversion module using the same |
DE10142615A1 (de) * | 2001-08-31 | 2003-04-10 | Siemens Ag | Leistungselektronikeinheit |
US6794723B2 (en) * | 2001-09-12 | 2004-09-21 | Ngk Insulators, Ltd. | Matrix type piezoelectric/electrostrictive device and manufacturing method thereof |
US7270885B1 (en) * | 2001-11-14 | 2007-09-18 | Marlene Rossing, legal representative | Method for brazing ceramic-containing bodies, and articles made thereby |
US6884511B1 (en) * | 2001-11-14 | 2005-04-26 | M Cubed Technologies, Inc. | Method for brazing ceramic-containing bodies, and articles made thereby |
US6692816B2 (en) * | 2001-11-28 | 2004-02-17 | 3M Innovative Properties Company | Abrasion resistant electrode and device |
TW519311U (en) * | 2002-01-11 | 2003-01-21 | Hon Hai Prec Ind Co Ltd | Electrical connector |
JP4692708B2 (ja) * | 2002-03-15 | 2011-06-01 | Dowaメタルテック株式会社 | セラミックス回路基板およびパワーモジュール |
JP3798721B2 (ja) * | 2002-03-29 | 2006-07-19 | 東芝セラミックス株式会社 | 半導体熱処理用反射板およびこの半導体熱処理用反射板の製造方法 |
JP3922538B2 (ja) * | 2002-04-18 | 2007-05-30 | 日立金属株式会社 | セラミックス回路基板の製造方法 |
ATE552717T1 (de) * | 2002-04-19 | 2012-04-15 | Mitsubishi Materials Corp | Leiterplatte, prozess zu ihrer herstellung und stromversorgungsmodul |
JP4113971B2 (ja) * | 2002-07-30 | 2008-07-09 | 株式会社豊田自動織機 | 低膨張材料及びその製造方法 |
US7057896B2 (en) * | 2002-08-21 | 2006-06-06 | Matsushita Electric Industrial Co., Ltd. | Power module and production method thereof |
JP4324704B2 (ja) * | 2002-09-13 | 2009-09-02 | Dowaメタルテック株式会社 | 金属−セラミックス複合部材の製造装置、製造用鋳型、並びに製造方法 |
JP3960542B2 (ja) * | 2002-09-13 | 2007-08-15 | シャープ株式会社 | 電子写真感光体およびその製造方法 |
JP3935037B2 (ja) * | 2002-09-30 | 2007-06-20 | Dowaホールディングス株式会社 | アルミニウム−セラミックス接合基板の製造方法 |
JP3740116B2 (ja) * | 2002-11-11 | 2006-02-01 | 三菱電機株式会社 | モールド樹脂封止型パワー半導体装置及びその製造方法 |
JP2004253736A (ja) * | 2003-02-21 | 2004-09-09 | Ngk Insulators Ltd | ヒートスプレッダモジュール |
WO2004079455A1 (ja) * | 2003-03-04 | 2004-09-16 | Mitsubishi Chemical Corporation | 電子写真感光体用基体、該基体の製造方法および該基体を用いた電子写真感光体 |
JP3967278B2 (ja) * | 2003-03-07 | 2007-08-29 | 日本碍子株式会社 | 接合部材及び静電チャック |
JP4014528B2 (ja) * | 2003-03-28 | 2007-11-28 | 日本碍子株式会社 | ヒートスプレッダモジュールの製造方法及びヒートスプレッダモジュール |
EP1518847B1 (en) * | 2003-09-29 | 2013-08-28 | Dowa Metaltech Co., Ltd. | Aluminum/ceramic bonding substrate and method for producing same |
KR101051197B1 (ko) * | 2003-09-29 | 2011-07-21 | 니혼도꾸슈도교 가부시키가이샤 | 박막 전자부품용 세라믹 기판 및 그 제조방법 및 이것을사용한 박막 전자부품 |
US20060035413A1 (en) * | 2004-01-13 | 2006-02-16 | Cookson Electronics, Inc. | Thermal protection for electronic components during processing |
US20050151555A1 (en) * | 2004-01-13 | 2005-07-14 | Cookson Electronics, Inc. | Cooling devices and methods of using them |
-
2005
- 2005-04-04 JP JP2006512070A patent/JP4918856B2/ja active Active
- 2005-04-04 WO PCT/JP2005/006618 patent/WO2005098942A1/ja active Application Filing
- 2005-04-04 US US10/599,622 patent/US7532481B2/en active Active
- 2005-04-04 EP EP05728866A patent/EP1737034A4/en not_active Ceased
- 2005-04-04 KR KR1020067023091A patent/KR101108454B1/ko active IP Right Grant
- 2005-04-04 KR KR1020117025146A patent/KR20110124372A/ko not_active Application Discontinuation
-
2008
- 2008-06-12 US US12/138,025 patent/US20080248326A1/en not_active Abandoned
-
2010
- 2010-05-20 US US12/784,330 patent/US8164909B2/en active Active
- 2010-12-06 JP JP2010271931A patent/JP5387547B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH069275A (ja) * | 1992-06-25 | 1994-01-18 | Ngk Spark Plug Co Ltd | 窒化アルミニウム焼結体及びこれを用いた半導体装置用基板 |
JPH08109069A (ja) * | 1994-10-11 | 1996-04-30 | Toshiba Corp | 窒化アルミニウム焼結体 |
JPH1067586A (ja) * | 1996-08-27 | 1998-03-10 | Dowa Mining Co Ltd | パワーモジュール用回路基板およびその製造方法 |
JP2002171037A (ja) * | 2000-09-22 | 2002-06-14 | Toshiba Corp | セラミックス回路基板およびその製造方法 |
JP2003017627A (ja) * | 2001-06-28 | 2003-01-17 | Toshiba Corp | セラミックス回路基板およびそれを用いた半導体モジュール |
Non-Patent Citations (1)
Title |
---|
See also references of EP1737034A4 * |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007311529A (ja) * | 2006-05-18 | 2007-11-29 | Mitsubishi Materials Corp | パワーモジュール |
JP2008021716A (ja) * | 2006-07-11 | 2008-01-31 | Mitsubishi Materials Corp | パワーモジュール用基板の製造方法およびパワーモジュール用基板並びにパワーモジュール |
JP2008041945A (ja) * | 2006-08-07 | 2008-02-21 | Mitsubishi Materials Corp | パワーモジュール用基板の製造方法およびパワーモジュール用基板並びにパワーモジュール |
JP2008244118A (ja) * | 2007-03-27 | 2008-10-09 | Hitachi Metals Ltd | 半導体モジュール |
US8116084B2 (en) | 2007-11-19 | 2012-02-14 | Mitsubishi Materials Corporation | Method for manufacturing power module substrate, power module substrate, and power module |
JP2009147316A (ja) * | 2007-11-19 | 2009-07-02 | Mitsubishi Materials Corp | パワーモジュール用基板の製造方法、パワーモジュール用基板、及びパワーモジュール |
WO2009066692A1 (ja) * | 2007-11-19 | 2009-05-28 | Mitsubishi Materials Corporation | パワーモジュール用基板の製造方法、パワーモジュール用基板、及びパワーモジュール |
JP2009164413A (ja) * | 2008-01-08 | 2009-07-23 | Mitsubishi Materials Corp | パワーモジュール用基板及びパワーモジュール |
JP2010141056A (ja) * | 2008-12-10 | 2010-06-24 | Mitsubishi Materials Corp | セラミックス基板及びその製造方法 |
JP2012169318A (ja) * | 2011-02-10 | 2012-09-06 | Showa Denko Kk | 絶縁回路基板、ならびにパワーモジュール用ベースおよびその製造方法 |
KR20160031497A (ko) * | 2013-08-26 | 2016-03-22 | 미쓰비시 마테리알 가부시키가이샤 | 접합체 및 파워 모듈용 기판 |
KR101676230B1 (ko) | 2013-08-26 | 2016-11-14 | 미쓰비시 마테리알 가부시키가이샤 | 접합체 및 파워 모듈용 기판 |
US9530717B2 (en) | 2013-08-26 | 2016-12-27 | Mitsubishi Materials Corporation | Bonded body and power module substrate |
JP2015046491A (ja) * | 2013-08-28 | 2015-03-12 | 住友電気工業株式会社 | ワイドバンドギャップ半導体装置および半導体モジュールの製造方法、ならびにワイドバンドギャップ半導体装置および半導体モジュール |
US9640619B2 (en) | 2013-08-28 | 2017-05-02 | Sumitomo Electric Industries, Ltd. | Methods of manufacturing wide band gap semiconductor device and semiconductor module, and wide band gap semiconductor device and semiconductor module |
WO2023163061A1 (ja) * | 2022-02-25 | 2023-08-31 | 京セラ株式会社 | 配線基板、電子装置及び電子モジュール |
Also Published As
Publication number | Publication date |
---|---|
JP5387547B2 (ja) | 2014-01-15 |
EP1737034A1 (en) | 2006-12-27 |
US20080248326A1 (en) | 2008-10-09 |
JP4918856B2 (ja) | 2012-04-18 |
KR20110124372A (ko) | 2011-11-16 |
KR20070013293A (ko) | 2007-01-30 |
US20070274047A1 (en) | 2007-11-29 |
JPWO2005098942A1 (ja) | 2008-03-06 |
KR101108454B1 (ko) | 2012-01-31 |
US20100230473A1 (en) | 2010-09-16 |
EP1737034A4 (en) | 2010-11-03 |
US7532481B2 (en) | 2009-05-12 |
US8164909B2 (en) | 2012-04-24 |
JP2011091417A (ja) | 2011-05-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005098942A1 (ja) | Ai/ain接合体、パワーモジュール用基板及びパワーモジュール並びにai/ain接合体の製造方法 | |
EP2911192B1 (en) | Substrate for power module with heat sink, power module with heat sink, and method for producing substrate for power module with heat sink | |
JP4241397B2 (ja) | 回路基板の製造方法 | |
EP3041042B1 (en) | Method of producing bonded body and method of producing power module substrate | |
WO2015046280A1 (ja) | Cu/セラミックス接合体、Cu/セラミックス接合体の製造方法、及び、パワーモジュール用基板 | |
KR20170044105A (ko) | 접합체, 히트 싱크가 부착된 파워 모듈용 기판, 히트 싱크, 접합체의 제조 방법, 히트 싱크가 부착된 파워 모듈용 기판의 제조 방법, 및 히트 싱크의 제조 방법 | |
KR20110015544A (ko) | 파워 모듈용 기판, 파워 모듈, 및 파워 모듈용 기판의 제조 방법 | |
KR20170046649A (ko) | 접합체, 히트 싱크가 부착된 파워 모듈용 기판, 히트 싱크, 접합체의 제조 방법, 히트 싱크가 부착된 파워 모듈용 기판의 제조 방법, 및 히트 싱크의 제조 방법 | |
WO2020044593A1 (ja) | 銅/セラミックス接合体、絶縁回路基板、及び、銅/セラミックス接合体の製造方法、及び、絶縁回路基板の製造方法 | |
KR20180077204A (ko) | 세라믹스/알루미늄 접합체, 절연 회로 기판, 파워 모듈, led 모듈, 열전 모듈 | |
TWI700263B (zh) | 陶瓷-鋁接合體、電力模組用基板、及電力模組 | |
CN108780784B (zh) | 带Ag基底层的金属部件、带Ag基底层的绝缘电路基板、半导体装置、带散热器的绝缘电路基板及带Ag基底层的金属部件的制造方法 | |
TWI813593B (zh) | 接合體及絕緣電路基板 | |
JP5664038B2 (ja) | パワーモジュール用基板、パワーモジュール用基板の製造方法及びパワーモジュール | |
JP6790945B2 (ja) | 絶縁回路基板の製造方法、及び、ヒートシンク付き絶縁回路基板の製造方法 | |
JP5741793B2 (ja) | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、パワーモジュール用基板の製造方法及びヒートシンク付パワーモジュール用基板の製造方法 | |
WO2017090422A1 (ja) | セラミックス/アルミニウム接合体、絶縁回路基板、パワーモジュール、ledモジュール、熱電モジュール | |
TW201843783A (zh) | 接合體之製造方法、絕緣電路基板之製造方法及附有散熱片絕緣電路基板之製造方法 | |
WO2020044594A1 (ja) | 銅/セラミックス接合体、絶縁回路基板、及び、銅/セラミックス接合体の製造方法、及び、絶縁回路基板の製造方法 | |
EP3753912A1 (en) | Method for manufacturing ceramic/al-sic composite material joined body, and method for manufacturing heat sink-equipped substrate for power module | |
TW201934523A (zh) | 陶瓷/鋁-碳化矽複合材料接合體之製造方法、及附散熱塊之功率模組用基板之製造方法 | |
JP6850984B2 (ja) | 銅/セラミックス接合体、絶縁回路基板、及び、銅/セラミックス接合体の製造方法、絶縁回路基板の製造方法 | |
JP5966790B2 (ja) | ヒートシンク付パワーモジュール用基板の製造方法 | |
JP2018030738A (ja) | セラミックス基板とアルミニウム含浸炭化珪素多孔質体との接合体の製造方法 | |
JP2019145604A (ja) | ヒートシンク付パワーモジュール用基板の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2006512070 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10599622 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005728866 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020067023091 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2005728866 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020067023091 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 10599622 Country of ref document: US |