WO2005094205A3 - Very high energy, high stability gas discharge laser surface treatment system - Google Patents

Very high energy, high stability gas discharge laser surface treatment system Download PDF

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Publication number
WO2005094205A3
WO2005094205A3 PCT/US2004/024160 US2004024160W WO2005094205A3 WO 2005094205 A3 WO2005094205 A3 WO 2005094205A3 US 2004024160 W US2004024160 W US 2004024160W WO 2005094205 A3 WO2005094205 A3 WO 2005094205A3
Authority
WO
WIPO (PCT)
Prior art keywords
gas discharge
laser
surface treatment
treatment system
discharge laser
Prior art date
Application number
PCT/US2004/024160
Other languages
French (fr)
Other versions
WO2005094205A2 (en
Inventor
Palash P Das
Bruce E Bolliger
Parthiv Patel
Brian C Klene
Paul C Melcher
Robert B Saethre
Original Assignee
Tcz Gmbh
Palash P Das
Bruce E Bolliger
Parthiv Patel
Brian C Klene
Paul C Melcher
Robert B Saethre
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/631,349 external-priority patent/US7039086B2/en
Priority claimed from US10/781,251 external-priority patent/US7167499B2/en
Application filed by Tcz Gmbh, Palash P Das, Bruce E Bolliger, Parthiv Patel, Brian C Klene, Paul C Melcher, Robert B Saethre filed Critical Tcz Gmbh
Priority to KR1020067001963A priority Critical patent/KR101123820B1/en
Priority to JP2006521997A priority patent/JP2007515774A/en
Priority to EP04821542A priority patent/EP1743405A4/en
Publication of WO2005094205A2 publication Critical patent/WO2005094205A2/en
Publication of WO2005094205A3 publication Critical patent/WO2005094205A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2253—XeCl, i.e. xenon chloride is comprised for lasing around 308 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
    • H01S3/2333—Double-pass amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2366—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media comprising a gas as the active medium

Abstract

A gas discharge laser crystallization apparatus and method for performing a transformation of a crystal makeup or orientation in the substrate of a workpiece is disclosed with may comprise, a multichambers laser system comprising, a first laser unit, and laser timing and control module, the timing and control module operates to create a gas discharge transiting the second discharge region, within plus or minus 3 ns and as a POPO, combining optics combine the out beams, and time creates pulse separation in the combined output a preselected time plus or minus 3 ns.
PCT/US2004/024160 2003-07-30 2004-07-26 Very high energy, high stability gas discharge laser surface treatment system WO2005094205A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020067001963A KR101123820B1 (en) 2003-07-30 2004-07-26 Very high energy, high stability gas discharge laser surface treatment system
JP2006521997A JP2007515774A (en) 2003-07-30 2004-07-26 Ultra high energy high stability gas discharge laser surface treatment system
EP04821542A EP1743405A4 (en) 2003-07-30 2004-07-26 Very high energy, high stability gas discharge laser surface treatment system

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US10/631,349 US7039086B2 (en) 2001-04-09 2003-07-30 Control system for a two chamber gas discharge laser
US10/631,349 2003-07-30
US72299203A 2003-11-26 2003-11-26
US10/722,992 2003-11-26
US10/781,251 2004-02-18
US10/781,251 US7167499B2 (en) 2001-04-18 2004-02-18 Very high energy, high stability gas discharge laser surface treatment system

Publications (2)

Publication Number Publication Date
WO2005094205A2 WO2005094205A2 (en) 2005-10-13
WO2005094205A3 true WO2005094205A3 (en) 2007-08-09

Family

ID=35064205

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/024160 WO2005094205A2 (en) 2003-07-30 2004-07-26 Very high energy, high stability gas discharge laser surface treatment system

Country Status (4)

Country Link
EP (1) EP1743405A4 (en)
JP (2) JP2007515774A (en)
KR (1) KR101123820B1 (en)
WO (1) WO2005094205A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7491954B2 (en) * 2006-10-13 2009-02-17 Cymer, Inc. Drive laser delivery systems for EUV light source
JP2009246345A (en) * 2008-03-12 2009-10-22 Komatsu Ltd Laser system
EP2351170A4 (en) * 2008-10-21 2013-04-10 Cymer Inc Method and apparatus for laser control in a two chamber gas discharge laser
NL2003777A (en) * 2009-01-08 2010-07-13 Asml Netherlands Bv Laser device.
CN113841309A (en) * 2019-05-22 2021-12-24 西默有限公司 Apparatus and method for generating multiple laser beams
CN116776478B (en) * 2023-08-23 2023-11-28 武汉嘉晨电子技术有限公司 Compression rate matching method for BDU buffer cushion and heat conducting pad of automobile

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5329398A (en) * 1992-11-05 1994-07-12 Novatec Laser Systems, Inc. Single grating laser pulse stretcher and compressor
US5991324A (en) * 1998-03-11 1999-11-23 Cymer, Inc. Reliable. modular, production quality narrow-band KRF excimer laser
US6143661A (en) * 1994-11-18 2000-11-07 Semiconductor Energy Laboratory Co., Ltd. Method of processing semiconductor device with laser

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2737814B1 (en) * 1995-08-11 1997-09-12 Soc D Production Et De Rech Ap METHOD AND DEVICE FOR CONTROLLING A LASER SOURCE WITH MULTIPLE LASER MODULES TO OPTIMIZE LASER SURFACE TREATMENT
US6625191B2 (en) * 1999-12-10 2003-09-23 Cymer, Inc. Very narrow band, two chamber, high rep rate gas discharge laser system
US6801560B2 (en) * 1999-05-10 2004-10-05 Cymer, Inc. Line selected F2 two chamber laser system
US8776146B2 (en) * 2004-12-28 2014-07-08 Livetv, Llc Aircraft in-flight entertainment system including a distributed digital radio service and associated methods

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5329398A (en) * 1992-11-05 1994-07-12 Novatec Laser Systems, Inc. Single grating laser pulse stretcher and compressor
US6143661A (en) * 1994-11-18 2000-11-07 Semiconductor Energy Laboratory Co., Ltd. Method of processing semiconductor device with laser
US5991324A (en) * 1998-03-11 1999-11-23 Cymer, Inc. Reliable. modular, production quality narrow-band KRF excimer laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1743405A4 *

Also Published As

Publication number Publication date
EP1743405A4 (en) 2009-11-11
KR101123820B1 (en) 2012-03-15
KR20060052927A (en) 2006-05-19
WO2005094205A2 (en) 2005-10-13
EP1743405A2 (en) 2007-01-17
JP2007515774A (en) 2007-06-14
JP2012191207A (en) 2012-10-04

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