WO2005091392B1 - Micro-reflectors on a substrate for high-density led array - Google Patents

Micro-reflectors on a substrate for high-density led array

Info

Publication number
WO2005091392B1
WO2005091392B1 PCT/US2005/009407 US2005009407W WO2005091392B1 WO 2005091392 B1 WO2005091392 B1 WO 2005091392B1 US 2005009407 W US2005009407 W US 2005009407W WO 2005091392 B1 WO2005091392 B1 WO 2005091392B1
Authority
WO
WIPO (PCT)
Prior art keywords
micro
array module
reflector
substrate
optical array
Prior art date
Application number
PCT/US2005/009407
Other languages
French (fr)
Other versions
WO2005091392A1 (en
Inventor
Mark D Owen
Duwayne R Anderson
Thomas R Mcneil
Alexander F Schreiner
Original Assignee
Phoseon Technology Inc
Mark D Owen
Duwayne R Anderson
Thomas R Mcneil
Alexander F Schreiner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Phoseon Technology Inc, Mark D Owen, Duwayne R Anderson, Thomas R Mcneil, Alexander F Schreiner filed Critical Phoseon Technology Inc
Priority to EP05728618.9A priority Critical patent/EP1735844B1/en
Publication of WO2005091392A1 publication Critical patent/WO2005091392A1/en
Publication of WO2005091392B1 publication Critical patent/WO2005091392B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

Abstract

The present invention provides an optical array module (50) that includes a plurality of semiconductor devices (56) mounted on a thermal substrate formed with a plurality of openings that function as micro-reflectors, wherein each micro-reflector includes a layer of reflective and conductive material (62) to reflect light and to electrically power its associated semiconductor device.

Claims

AMENDED CLAIMS[Received by the International Bureau on 20 October 2005 (20.10.2005): original claims 1-20 replaced by amended claims 1-25]
1. An optical array module, the module being used for applications requiring relatively high optical power density applied to a working surface of a target, for the purpose of performing a material transformation in or of the target, the module comprising: a plurality of micro-reflectors arranged in an MxN array, M>1 and N>1, and a plurality of semiconductor devices, wherein a selected number of such plurality of semiconductor devices are associated with one such micro-reflector, and wherein light emitted laterally from such selected number of semiconductor devices is substantially collected by the one such micro-reflector so as to enhance the optical power density from such selected number of semiconductor devices.
2. The optical array module of claim 1, wherein the micro-reflectors are arranged in an array having a center-to-center spacing of about 3 mm or less.
3. The optical array module of claim 1, wherein the micro-reflectors are about 700 square microns.
4. The optical array module of claim 1, wherein each micro-reflector is formed in a truncated pyramidal shape.
5. The optical array module of claim 4, further comprising a thermally conductive substrate, the substrate having a plurality of openings in its surface, the openings being substantially square at the surface, and having sidewalls cut into the substrate that slope to a base, so as to create a truncated pyramidal shape and wherein each such opening provides for formation of a respective one micro-reflector.
6. The optical array module of claim 1, wherein each micro-reflector has a parabolic shape.
7. The optical array module of claim 1, further including an array of micro-lenses, and one or more micro-reflectors is associated with a respective micro-lens, in connection with collection and collimation of light emitted from one or more such semiconductor devices.
8. The optical array module of claim 1, wherein the micro-reflector includes a layer of reflective material, such reflective material reflecting selected wavelength(s) of light from the semiconductor device.
9. The optical array module of claim 8, wherein the reflective material includes silver or aluminum, whereby selected wavelength(s) in the UV spectra are reflected.
10. The optical array module of claim 8, wherein the reflective material includes gold, whereby selected wavelength(s) in the visible spectra are reflected.
11. The optical array module of claim 1 , further comprising a thermally conductive substrate and a material layered on such substrate, the material having a plurality of openings in its surface, wherein each such opening provides for formation of a respective one micro-reflector.
12. The optical array module of claim 11, wherein the openings enter the substrate.
13. The optical array module of claim 1, wherein the micro-reflector includes a layer of conductive material, the conductive material providing electrical connection for its associated semiconductor devices.
14. The optical array module of claim 13, wherein the micro-reflector includes a layer of reflective material, such reflective material and the conductive material being the same layer.
15. A method of manufacturing an optical array module, comprising: providing a thermally conductive substrate, forming a plurality of openings in the substrate in an MxN array, M>1 and
N>1, providing a layer of reflective material in each opening, and mounting a semiconductor device within each opening so that the layer of reflective material in each opening substantially reflects light emitted laterally from its associated semiconductor device, while also providing electrical connection for its associated semiconductor device.
19
16. The method of claim 15, wherein the openings in the substrate are formed by a crystallographic etching process.
17. The method of claim 16, wherein the openings have sidewalls having a characteristic slope.
18. The method of claim 17, wherein the sidewalls slope at an angle of about 54.7 degrees.
19. The method of claim 15, wherein the openings in the substrate are formed by a machining process.
20. The method of claim 19, wherein the openings have a parabolic shape.
21. The method of claim 15, wherein the openings are formed in an array having a center-to-center spacing of about 800 microns (0.032 in.).
22. The method of claim 15, wherein the substrate is formed from one of silicon, SiC, diamond, A1N, A1203, or BeO.
23. The method of claim 15, wherein providing a layer of reflective material comprises selecting the material so as to reflect light of a selected light spectra.
24. The method of claim 16, wherein each micro-reflector is formed in a truncated pyramidal shape.
25. A system, the system providing for performance of material transformation in or of a target, the target having a working surface to which the system is required to apply a relatively high optical power density, the system comprising an optical array module, the module having: a plurality of micro-reflectors, arranged in an MxN array, M>1 and N>1, and a plurality of semiconductor devices, wherein a selected number of such plurality of semiconductor devices are associated with one such micro-reflector, and wherein light emitted laterally from such selected number of semiconductor devices is substantially collected by the one such micro-reflector so as to enhance the optical power density from such selected number of semiconductor devices, whereby the optical power density applied to the working surface is increased.
20
PCT/US2005/009407 2004-03-18 2005-03-18 Micro-reflectors on a substrate for high-density led array WO2005091392A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP05728618.9A EP1735844B1 (en) 2004-03-18 2005-03-18 Use of a high-density light emitting diode array comprising micro-reflectors for curing applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US55462804P 2004-03-18 2004-03-18
US60/554,628 2004-03-18

Publications (2)

Publication Number Publication Date
WO2005091392A1 WO2005091392A1 (en) 2005-09-29
WO2005091392B1 true WO2005091392B1 (en) 2005-12-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/009407 WO2005091392A1 (en) 2004-03-18 2005-03-18 Micro-reflectors on a substrate for high-density led array

Country Status (4)

Country Link
US (3) US7638808B2 (en)
EP (1) EP1735844B1 (en)
TW (1) TWI312583B (en)
WO (1) WO2005091392A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8496356B2 (en) 2002-05-08 2013-07-30 Phoseon Technology, Inc. High efficiency solid-state light source and methods of use and manufacture
US8637332B2 (en) 2004-03-18 2014-01-28 Phoseon Technology, Inc. Micro-reflectors on a substrate for high-density LED array

Families Citing this family (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100472823C (en) * 2003-10-15 2009-03-25 日亚化学工业株式会社 Light-emitting device
EP1678442B8 (en) 2003-10-31 2013-06-26 Phoseon Technology, Inc. Led light module and manufacturing method
TWI257718B (en) 2004-03-18 2006-07-01 Phoseon Technology Inc Direct cooling of LEDs
EP1743384B1 (en) * 2004-03-30 2015-08-05 Phoseon Technology, Inc. Led array having array-based led detectors
DE602005027201D1 (en) * 2004-04-12 2011-05-12 Phoseon Technology Inc HIGH DENSITY LED ARRAY
US8077305B2 (en) * 2004-04-19 2011-12-13 Owen Mark D Imaging semiconductor structures using solid state illumination
ITRM20040633A1 (en) * 2004-12-23 2005-03-23 St Microelectronics Srl MULTI-SOURCE OPTICAL TRANSMITTER AND PHOTON DISPLAY DEVICE.
KR101288758B1 (en) 2004-12-30 2013-07-23 포세온 테크날러지 인코퍼레이티드 Methods and systems relating to light sources for use in industrial processes
JP4814540B2 (en) * 2005-03-23 2011-11-16 スタンレー電気株式会社 Method for manufacturing phosphor
KR20080006634A (en) * 2005-04-28 2008-01-16 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Light source comprising led arranged in recess
US7470921B2 (en) * 2005-09-20 2008-12-30 Summit Business Products, Inc. Light-emitting diode device
US8251689B2 (en) * 2005-09-20 2012-08-28 Summit Business Products, Inc. Ultraviolet light-emitting diode device
US7521726B2 (en) 2006-03-15 2009-04-21 Illinois Tool Works Inc. Collimated LED array with reflector
KR20080032882A (en) * 2006-10-11 2008-04-16 삼성전기주식회사 Light emitting diode package
KR20080048112A (en) * 2006-11-28 2008-06-02 삼성전자주식회사 Light emitting diode, backlight unit and liquid crystal display having the same
JP5179766B2 (en) * 2007-03-08 2013-04-10 スタンレー電気株式会社 Semiconductor light emitting device and manufacturing method thereof
US20090002669A1 (en) * 2007-06-29 2009-01-01 Optical Associates, Inc. Ultraviolet light-emitting diode exposure apparatus for microfabrication
TWM332938U (en) * 2007-08-17 2008-05-21 Lighthouse Technology Co Ltd Surface mount type light emitting diode package device
EP2031657A1 (en) * 2007-08-31 2009-03-04 ILED Photoelectronics, Inc. Package structure for a high-luminance light source
WO2009063382A1 (en) * 2007-11-13 2009-05-22 Koninklijke Philips Electronics N.V. A lighting panel
US7830592B1 (en) * 2007-11-30 2010-11-09 Sipix Imaging, Inc. Display devices having micro-reflectors
US8237892B1 (en) 2007-11-30 2012-08-07 Sipix Imaging, Inc. Display device with a brightness enhancement structure
US7959282B2 (en) * 2007-12-20 2011-06-14 Summit Business Products, Inc. Concentrated energy source
KR100983582B1 (en) * 2007-12-31 2010-10-11 엘지디스플레이 주식회사 Apparatus and method for exposure and method for pattrning thin layer using the same
US8395836B2 (en) * 2008-03-11 2013-03-12 Sipix Imaging, Inc. Luminance enhancement structure for reflective display devices
US8437069B2 (en) * 2008-03-11 2013-05-07 Sipix Imaging, Inc. Luminance enhancement structure for reflective display devices
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8384007B2 (en) 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US9515218B2 (en) * 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US8441414B2 (en) * 2008-12-05 2013-05-14 Sipix Imaging, Inc. Luminance enhancement structure with Moiré reducing design
US8651704B1 (en) 2008-12-05 2014-02-18 Musco Corporation Solid state light fixture with cooling system with heat rejection management
TWI462350B (en) * 2008-12-24 2014-11-21 Ind Tech Res Inst Light emitting device with multi-chips
US20100165620A1 (en) * 2008-12-29 2010-07-01 Phoseon Technology, Inc. Reflector channel
US9025234B2 (en) * 2009-01-22 2015-05-05 E Ink California, Llc Luminance enhancement structure with varying pitches
US8120836B2 (en) * 2009-03-09 2012-02-21 Sipix Imaging, Inc. Luminance enhancement structure for reflective display devices
US8714780B2 (en) * 2009-04-22 2014-05-06 Sipix Imaging, Inc. Display devices with grooved luminance enhancement film
KR101092063B1 (en) * 2009-04-28 2011-12-12 엘지이노텍 주식회사 Light emitting device package and method for fabricating the same
US8797633B1 (en) 2009-07-23 2014-08-05 Sipix Imaging, Inc. Display device assembly and manufacture thereof
US8456589B1 (en) 2009-07-27 2013-06-04 Sipix Imaging, Inc. Display device assembly
US20110116262A1 (en) * 2009-11-13 2011-05-19 Phoseon Technology, Inc. Economical partially collimating reflective micro optical array
CN102074637B (en) * 2009-11-19 2013-06-05 深圳市光峰光电技术有限公司 Method and structure for encapsulating solid-state luminous chips and light source device using encapsulation structure
JP5421799B2 (en) * 2010-01-18 2014-02-19 パナソニック株式会社 LED unit
US8809820B2 (en) 2010-01-27 2014-08-19 Heraeus Noblelight Fusion Uv Inc. Micro-channel-cooled high heat load light emitting device
EP2610014B1 (en) * 2010-01-27 2018-01-03 Heraeus Noblelight Fusion UV Inc. Micro-channel-cooled high heat load light emitting device
AT509562A1 (en) * 2010-02-24 2011-09-15 Thallner Erich LIGHTING DEVICE AND METHOD FOR PRODUCING SUCH A
WO2011109442A2 (en) * 2010-03-02 2011-09-09 Oliver Steven D Led packaging with integrated optics and methods of manufacturing the same
CN103222073B (en) 2010-08-03 2017-03-29 财团法人工业技术研究院 Light-emitting diode chip for backlight unit, package structure for LED and to form above-mentioned method
CN103109587B (en) 2010-09-06 2016-10-19 贺利氏特种光源有限责任公司 The coating process of optoelectronic chip-on-board module
DE102011107892A1 (en) 2011-07-18 2013-01-24 Heraeus Noblelight Gmbh Method for coating e.g. chip-on-board UV-LED module utilized in solar cell, involves curing and cross-linking liquid silicone with optoelectronic components and carriers, and removing carrier with hardened silicone coating from mold
TWI446578B (en) * 2010-09-23 2014-07-21 Epistar Corp Light-emitting element and the manufacturing method thereof
KR101883839B1 (en) * 2010-12-07 2018-08-30 엘지이노텍 주식회사 Light emitting device module and bcklight unit including the same
US20120170014A1 (en) * 2011-01-04 2012-07-05 Northwestern University Photolithography system using a solid state light source
DE102011107893A1 (en) * 2011-07-18 2013-01-24 Heraeus Noblelight Gmbh Optoelectronic module with improved optics
DE102011079403A1 (en) * 2011-07-19 2013-01-24 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component
WO2013061228A1 (en) * 2011-10-28 2013-05-02 Koninklijke Philips Electronics N.V. Light emitting device with integral shaped reflector
TWI449466B (en) 2011-12-26 2014-08-11 Ind Tech Res Inst Light devices
US20130170174A1 (en) 2011-12-29 2013-07-04 Intematix Technology Center Corp. Multi-cavities light emitting device
EP2613354B1 (en) * 2012-01-03 2020-05-06 Epistar Corporation Multi-cavaties light emitting device
WO2013104963A1 (en) * 2012-01-10 2013-07-18 Koninklijke Philips N.V. Light emitting array with improved light output efficiency
DE102012202102A1 (en) * 2012-02-13 2013-08-14 Osram Gmbh Lighting device has reflecting partition wall which is arranged between volume emitter LED chips which are arranged on common substrate
JP6150894B2 (en) * 2012-08-20 2017-06-21 ヘレウス ノーブルライト アメリカ エルエルシー Microchannel cooling type high heat load light emitting device
US9178123B2 (en) 2012-12-10 2015-11-03 LuxVue Technology Corporation Light emitting device reflective bank structure
US9029880B2 (en) 2012-12-10 2015-05-12 LuxVue Technology Corporation Active matrix display panel with ground tie lines
US9159700B2 (en) 2012-12-10 2015-10-13 LuxVue Technology Corporation Active matrix emissive micro LED display
US20140357425A1 (en) * 2013-05-31 2014-12-04 Nike, Inc. Golf ball with visible light-cured coating and method
US9082926B2 (en) 2013-06-18 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor optical emitting device with metallized sidewalls
TWI536613B (en) * 2013-12-16 2016-06-01 隆達電子股份有限公司 Solid-state light emitting module
AT515372B1 (en) * 2014-01-29 2019-10-15 At & S Austria Tech & Systemtechnik Ag Method for producing a printed circuit board
DE202015009236U1 (en) * 2014-03-07 2016-12-27 Sensor Electronic Technology, Inc. Ultraviolet Oberflächenilluminator
US10456488B2 (en) 2014-03-07 2019-10-29 Sensor Electronic Technology, Inc. Ultraviolet transparent structure for ultraviolet illumination using scattered and focused radiation
USD780704S1 (en) * 2014-08-27 2017-03-07 Mitsubishi Electric Corporation Light source module
USD768584S1 (en) * 2014-11-13 2016-10-11 Mitsubishi Electric Corporation Light source module
US10520251B2 (en) 2015-01-15 2019-12-31 Heraeus Noblelight America Llc UV light curing systems, and methods of designing and operating the same
US9664371B2 (en) 2015-01-15 2017-05-30 Heraeus Noblelight America Llc Lamp head assemblies and methods of assembling the same
US9644831B2 (en) 2015-01-15 2017-05-09 Heraeus Noblelight America Llc Intelligent manifold assemblies for a light source, light sources including intelligent manifold assemblies, and methods of operating the same
US9648705B2 (en) 2015-01-15 2017-05-09 Heraeus Noblelight America Llc Intelligent lamp head assemblies, light sources including intelligent lamp head assemblies, and methods of operating the same
US10027866B2 (en) * 2015-08-05 2018-07-17 Whirlpool Corporation Refrigerators having internal content cameras, and methods of operating the same
US10209005B2 (en) 2015-10-05 2019-02-19 Sunlite Science & Technology, Inc. UV LED systems and methods
EP3420601B1 (en) * 2016-02-26 2023-08-02 Magic Leap, Inc. Optical system
KR20190085516A (en) 2016-12-09 2019-07-18 어플라이드 머티어리얼스, 인코포레이티드 Collimated LED Light - Field Display
CN106970508A (en) * 2017-05-25 2017-07-21 苏州灯龙光电科技有限公司 A kind of parallel exposing machine light source module
US10490599B2 (en) 2017-07-13 2019-11-26 Applied Materials, Inc. Collimated, directional micro-LED light field display
KR102498252B1 (en) * 2017-09-26 2023-02-10 삼성전자주식회사 Display including luminous chips and manufacturing method thereof
EP3599759A1 (en) * 2018-07-23 2020-01-29 Aptiv Technologies Limited Camera with 2-component element
TWI708404B (en) * 2019-08-16 2020-10-21 錼創顯示科技股份有限公司 Micro light emitting device and micro light emitting diode device substrate

Family Cites Families (180)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1218852A (en) * 1968-04-02 1971-01-13 English Electric Co Ltd High voltage thyristor equipment
US4435732A (en) * 1973-06-04 1984-03-06 Hyatt Gilbert P Electro-optical illumination control system
US3936686A (en) * 1973-05-07 1976-02-03 Moore Donald W Reflector lamp cooling and containing assemblies
US4011575A (en) 1974-07-26 1977-03-08 Litton Systems, Inc. Light emitting diode array having a plurality of conductive paths for each light emitting diode
JPS57180005A (en) * 1981-04-30 1982-11-05 Hitachi Ltd Silicon carbide electric insulator with low dielectric constant
JPS58199576A (en) * 1982-05-14 1983-11-19 Sanyo Electric Co Ltd Light emitting diode indicator
DE3315785A1 (en) * 1983-04-30 1984-11-08 Robert Bosch Gmbh, 7000 Stuttgart MOTOR VEHICLE LIGHT
AU2935384A (en) 1983-06-24 1985-01-03 Screen Printing Supplies Pty. Ltd. Heat curing apparatus
US4595289A (en) 1984-01-25 1986-06-17 At&T Bell Laboratories Inspection system utilizing dark-field illumination
US4530040A (en) 1984-03-08 1985-07-16 Rayovac Corporation Optical focusing system
WO1986002045A1 (en) * 1984-09-27 1986-04-10 Sanyo Electric Co., Ltd. Optical printing head for optical printing apparatus
FR2589629B1 (en) * 1985-11-05 1987-12-18 Radiotechnique Compelec OPTO-ELECTRONIC COMPONENT FOR SURFACE MOUNTING AND MANUFACTURING METHOD THEREOF
US4684801A (en) 1986-02-28 1987-08-04 Carroll Touch Inc. Signal preconditioning for touch entry device
KR880014692A (en) * 1987-05-30 1988-12-24 강진구 Semiconductor Light Emitting Device with Reflector
US4935665A (en) * 1987-12-24 1990-06-19 Mitsubishi Cable Industries Ltd. Light emitting diode lamp
GB2224374A (en) 1988-08-24 1990-05-02 Plessey Co Plc Temperature control of light-emitting devices
FR2639749B1 (en) * 1988-11-29 1992-11-27 Cibie Projecteurs FLEXIBLE LIGHTING STRIP WITH LIGHT EMITTING DIODES
DE8815418U1 (en) 1988-12-12 1989-02-16 Isensee-Electronic-Gmbh, 7012 Fellbach, De
ATE149743T1 (en) * 1990-04-27 1997-03-15 Omron Tateisi Electronics Co LIGHT EMITTING SEMICONDUCTOR DEVICE WITH FRESNEL LENS
US5150623A (en) * 1990-07-17 1992-09-29 The Boeing Company Inspection device for flush head bolts and rivets
US5119174A (en) * 1990-10-26 1992-06-02 Chen Der Jong Light emitting diode display with PCB base
US5195102A (en) 1991-09-13 1993-03-16 Litton Systems Inc. Temperature controlled laser diode package
JP3025109B2 (en) * 1992-03-11 2000-03-27 シャープ株式会社 Light source and light source device
US5397867A (en) 1992-09-04 1995-03-14 Lucas Industries, Inc. Light distribution for illuminated keyboard switches and displays
JPH06301304A (en) * 1993-02-19 1994-10-28 Minolta Camera Co Ltd Fixing device
US6118383A (en) * 1993-05-07 2000-09-12 Hegyi; Dennis J. Multi-function light sensor for vehicle
FR2707223B1 (en) 1993-07-07 1995-09-29 Valeo Vision Improved signaling light with light-emitting diodes.
US5420768A (en) 1993-09-13 1995-05-30 Kennedy; John Portable led photocuring device
US5424544A (en) 1994-04-29 1995-06-13 Texas Instruments Incorporated Inter-pixel thermal isolation for hybrid thermal detectors
US5632551A (en) * 1994-07-18 1997-05-27 Grote Industries, Inc. LED vehicle lamp assembly
DE4429913C1 (en) 1994-08-23 1996-03-21 Fraunhofer Ges Forschung Device and method for plating
US5698866A (en) * 1994-09-19 1997-12-16 Pdt Systems, Inc. Uniform illuminator for phototherapy
US6330017B1 (en) 1994-10-12 2001-12-11 Ricoh Co., Ltd. Light emitting diode array head including focusing lenses
US5555038A (en) 1994-10-28 1996-09-10 Bausch & Lomb Incorporated Unitary lens for eyewear
US5660461A (en) 1994-12-08 1997-08-26 Quantum Devices, Inc. Arrays of optoelectronic devices and method of making same
US5522225A (en) 1994-12-19 1996-06-04 Xerox Corporation Thermoelectric cooler and temperature sensor subassembly with improved temperature control
US5554849A (en) 1995-01-17 1996-09-10 Flir Systems, Inc. Micro-bolometric infrared staring array
US5623510A (en) * 1995-05-08 1997-04-22 The United States Of America As Represented By The United States Department Of Energy Tunable, diode side-pumped Er: YAG laser
US5609778A (en) * 1995-06-02 1997-03-11 International Business Machines Corporation Process for high contrast marking on surfaces using lasers
DE19619155C2 (en) 1995-12-22 1998-11-12 Heraeus Kulzer Gmbh Irradiation device for curing plastics, as well as processes and uses
SG42307A1 (en) 1996-01-09 1997-08-15 Peng Seng Toh Measurement and inspection of leads on integrated circuit packages
US5719589A (en) * 1996-01-11 1998-02-17 Motorola, Inc. Organic light emitting diode array drive apparatus
US5806965A (en) * 1996-01-30 1998-09-15 R&M Deese, Inc. LED beacon light
IL118872A (en) 1996-07-16 2000-06-01 Orbot Instr Ltd Optical inspection method and apparatus
US5880828A (en) * 1996-07-26 1999-03-09 Hitachi Electronics Engineering Co., Ltd. Surface defect inspection device and shading correction method therefor
US6058012A (en) 1996-08-26 2000-05-02 Compaq Computer Corporation Apparatus, method and system for thermal management of an electronic system having semiconductor devices
US5857767A (en) 1996-09-23 1999-01-12 Relume Corporation Thermal management system for L.E.D. arrays
US5715270A (en) * 1996-09-27 1998-02-03 Mcdonnell Douglas Corporation High efficiency, high power direct diode laser systems and methods therefor
US5910706A (en) * 1996-12-18 1999-06-08 Ultra Silicon Technology (Uk) Limited Laterally transmitting thin film electroluminescent device
TW402856B (en) * 1996-12-26 2000-08-21 Palite Corp LED illuminator
CA2197706A1 (en) 1997-02-14 1998-08-14 Peter Ehbets Method of fabricating apodized phase mask
US5877899A (en) * 1997-05-13 1999-03-02 Northeast Robotics Llc Imaging system and method for imaging indicia on wafer
DE19721311C1 (en) 1997-05-21 1998-12-03 Eka Ges Fuer Medizinisch Tech Irradiation device for the polymerization of light-curing plastics
US6319425B1 (en) * 1997-07-07 2001-11-20 Asahi Rubber Inc. Transparent coating member for light-emitting diodes and a fluorescent color light source
US6459919B1 (en) 1997-08-26 2002-10-01 Color Kinetics, Incorporated Precision illumination methods and systems
US6577332B2 (en) * 1997-09-12 2003-06-10 Ricoh Company, Ltd. Optical apparatus and method of manufacturing optical apparatus
US6163036A (en) 1997-09-15 2000-12-19 Oki Data Corporation Light emitting element module with a parallelogram-shaped chip and a staggered chip array
US6273596B1 (en) * 1997-09-23 2001-08-14 Teledyne Lighting And Display Products, Inc. Illuminating lens designed by extrinsic differential geometry
US6346771B1 (en) 1997-11-19 2002-02-12 Unisplay S.A. High power led lamp
TW408497B (en) * 1997-11-25 2000-10-11 Matsushita Electric Works Ltd LED illuminating apparatus
JPH11186594A (en) 1997-12-25 1999-07-09 Hitachi Cable Ltd Light-emitting diode array
US6200134B1 (en) 1998-01-20 2001-03-13 Kerr Corporation Apparatus and method for curing materials with radiation
EP0935145A1 (en) 1998-02-04 1999-08-11 IMS Industrial Micro System AG Optical signal and display device
US6239702B1 (en) 1998-03-10 2001-05-29 Raytheon Company Electromagnetic energy detection
US6088185A (en) 1998-06-05 2000-07-11 Seagate Technology, Inc. Rotational vibration detection using a velocity sense coil
US6536923B1 (en) 1998-07-01 2003-03-25 Sidler Gmbh & Co. Optical attachment for a light-emitting diode and brake light for a motor vehicle
US6290382B1 (en) 1998-08-17 2001-09-18 Ppt Vision, Inc. Fiber bundle combiner and led illumination system and method
JP3195294B2 (en) 1998-08-27 2001-08-06 スタンレー電気株式会社 Vehicle lighting
US6291839B1 (en) 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
US6115184A (en) 1998-11-13 2000-09-05 Xerox Corporation Light collector for an LED array
US6534791B1 (en) 1998-11-27 2003-03-18 Lumileds Lighting U.S., Llc Epitaxial aluminium-gallium nitride semiconductor substrate
US6065854A (en) 1999-01-07 2000-05-23 Integrated Systems Engineering Inc. LED modular display system
US6325524B1 (en) 1999-01-29 2001-12-04 Agilent Technologies, Inc. Solid state based illumination source for a projection display
US20010042866A1 (en) 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
EP1031326A1 (en) 1999-02-05 2000-08-30 Jean-Michel Decaudin Device for photo-activation of photosensitive composite materials especially in dentistry
US6320206B1 (en) 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US6155699A (en) 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
JP2000349348A (en) 1999-03-31 2000-12-15 Toyoda Gosei Co Ltd Short wavelength led lamp unit
EP1175276B1 (en) 1999-04-07 2004-06-23 MV Research Limited Material inspection
US6357904B1 (en) 1999-04-19 2002-03-19 Nec Corporation Linear illumination device
DE19918370B4 (en) 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED white light source with lens
US6439888B1 (en) 1999-05-03 2002-08-27 Pls Liquidating Llc Optical source and method
JP4332933B2 (en) * 1999-06-10 2009-09-16 ソニー株式会社 Inspection device
DE19931689A1 (en) * 1999-07-08 2001-01-11 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Planar LED assembly on thermally-conductive board, increases cooling, component packing density and life, whilst permitting active device integration to form display- or illumination panel in or on e.g. vehicle
US6366017B1 (en) 1999-07-14 2002-04-02 Agilent Technologies, Inc/ Organic light emitting diodes with distributed bragg reflector
TW457732B (en) 1999-08-27 2001-10-01 Lumileds Lighting Bv Luminaire, optical element and method of illuminating an object
JP4131891B2 (en) 1999-09-03 2008-08-13 ローム株式会社 Lens array and method for manufacturing lens array
EP1089069A3 (en) 1999-10-01 2001-08-29 CorkOpt Limited Linear illumination
US6788895B2 (en) 1999-12-10 2004-09-07 Altera Corporation Security mapping and auto reconfiguration
US6225139B1 (en) * 2000-01-24 2001-05-01 Chan Tsung-Wen Manufacturing method of an led of a type of round concave cup with a flat bottom
US6318886B1 (en) 2000-02-11 2001-11-20 Whelen Engineering Company High flux led assembly
US7320593B2 (en) * 2000-03-08 2008-01-22 Tir Systems Ltd. Light emitting diode light source for curing dental composites
US6419384B1 (en) 2000-03-24 2002-07-16 Buztronics Inc Drinking vessel with indicator activated by inertial switch
US6328456B1 (en) * 2000-03-24 2001-12-11 Ledcorp Illuminating apparatus and light emitting diode
EP1158761A1 (en) 2000-05-26 2001-11-28 GRETAG IMAGING Trading AG Photographic image acquisition device using led chips
GB2365430B (en) 2000-06-08 2002-08-28 Ciba Sc Holding Ag Acylphosphine photoinitiators and intermediates
DE60143152D1 (en) 2000-06-29 2010-11-11 Koninkl Philips Electronics Nv OPTOELECTRIC ELEMENT
JP4142234B2 (en) 2000-07-04 2008-09-03 株式会社エンプラス Surface light source device and liquid crystal display device
DE10038213A1 (en) 2000-08-04 2002-03-07 Osram Opto Semiconductors Gmbh Radiation source and method of making a lens mold
EP1891909B1 (en) 2000-08-04 2017-04-19 Kerr Corporation Apparatus for curing materials with light radiation
WO2002015281A2 (en) * 2000-08-17 2002-02-21 Power Signal Technologies, Inc. Glass-to-metal hermetically sealed led array
CN1259732C (en) * 2000-09-29 2006-06-14 欧姆龙株式会社 Optical device for optical element and equipment using the same
EP1366552B1 (en) * 2000-09-29 2011-11-09 Panasonic Electric Works Co., Ltd. Semiconductor device with protective functions
US6998281B2 (en) 2000-10-12 2006-02-14 General Electric Company Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics
US7714301B2 (en) 2000-10-27 2010-05-11 Molecular Devices, Inc. Instrument excitation source and calibration method
US6525335B1 (en) 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
GB2369428B (en) 2000-11-22 2004-11-10 Imperial College Detection system
CA2332190A1 (en) 2001-01-25 2002-07-25 Efos Inc. Addressable semiconductor array light source for localized radiation delivery
US7075112B2 (en) 2001-01-31 2006-07-11 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
US6541800B2 (en) 2001-02-22 2003-04-01 Weldon Technologies, Inc. High power LED
US6547249B2 (en) 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
AT5495U1 (en) * 2001-04-09 2002-07-25 Bartenbach Christian LUMINAIRE FOR LIGHTING ROOMS WITH A VARIETY OF LEDS
US6457823B1 (en) 2001-04-13 2002-10-01 Vutek Inc. Apparatus and method for setting radiation-curable ink
US6755647B2 (en) 2001-04-26 2004-06-29 New Photonics, Llc Photocuring device with axial array of light emitting diodes and method of curing
US6607286B2 (en) 2001-05-04 2003-08-19 Lumileds Lighting, U.S., Llc Lens and lens cap with sawtooth portion for light emitting diode
US6630689B2 (en) 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
DE10125341B4 (en) * 2001-05-23 2006-11-23 Ivoclar Vivadent Ag Irradiation device and light curing device
US6578986B2 (en) * 2001-06-29 2003-06-17 Permlight Products, Inc. Modular mounting arrangement and method for light emitting diodes
US6785001B2 (en) 2001-08-21 2004-08-31 Silicon Light Machines, Inc. Method and apparatus for measuring wavelength jitter of light signal
US20030043582A1 (en) 2001-08-29 2003-03-06 Ball Semiconductor, Inc. Delivery mechanism for a laser diode array
US6586761B2 (en) 2001-09-07 2003-07-01 Intel Corporation Phase change material memory device
JP4067802B2 (en) * 2001-09-18 2008-03-26 松下電器産業株式会社 Lighting device
US6561808B2 (en) * 2001-09-27 2003-05-13 Ceramoptec Industries, Inc. Method and tools for oral hygiene
WO2003030274A1 (en) * 2001-09-27 2003-04-10 Nichia Corporation Light-emitting device and its manufacturing method
US6942018B2 (en) * 2001-09-28 2005-09-13 The Board Of Trustees Of The Leland Stanford Junior University Electroosmotic microchannel cooling system
KR100444986B1 (en) 2001-09-29 2004-08-21 삼성전자주식회사 Illumination system and a projector imploying it
US6498355B1 (en) 2001-10-09 2002-12-24 Lumileds Lighting, U.S., Llc High flux LED array
US6561640B1 (en) 2001-10-31 2003-05-13 Xerox Corporation Systems and methods of printing with ultraviolet photosensitive resin-containing materials using light emitting devices
US6966677B2 (en) 2001-12-10 2005-11-22 Galli Robert D LED lighting assembly with improved heat management
US6480389B1 (en) 2002-01-04 2002-11-12 Opto Tech Corporation Heat dissipation structure for solid-state light emitting device package
JP3991730B2 (en) 2002-03-13 2007-10-17 チッソ株式会社 Polymerizable compound and polymer thereof
US6724473B2 (en) * 2002-03-27 2004-04-20 Kla-Tencor Technologies Corporation Method and system using exposure control to inspect a surface
US6796698B2 (en) 2002-04-01 2004-09-28 Gelcore, Llc Light emitting diode-based signal light
US6882331B2 (en) 2002-05-07 2005-04-19 Jiahn-Chang Wu Projector with array LED matrix light source
KR20050044865A (en) 2002-05-08 2005-05-13 포세온 테크날러지 인코퍼레이티드 High efficiency solid-state light source and methods of use and manufacture
US7659547B2 (en) * 2002-05-22 2010-02-09 Phoseon Technology, Inc. LED array
DE10223201C1 (en) 2002-05-24 2003-05-28 Fraunhofer Ges Forschung Optical detection device for optical data has primary detection diode and secondary detection diodes coupled to respective read-out circuits with different read-out rates
US6573536B1 (en) 2002-05-29 2003-06-03 Optolum, Inc. Light emitting diode light source
GB2396331A (en) 2002-12-20 2004-06-23 Inca Digital Printers Ltd Curing ink
US20040134603A1 (en) 2002-07-18 2004-07-15 Hideo Kobayashi Method and apparatus for curing adhesive between substrates, and disc substrate bonding apparatus
US7279069B2 (en) 2002-07-18 2007-10-09 Origin Electric Company Limited Adhesive curing method, curing apparatus, and optical disc lamination apparatus using the curing apparatus
KR101047246B1 (en) 2002-07-25 2011-07-06 조나단 에스. 담 Method and apparatus for using curing LED
JP2004079750A (en) * 2002-08-16 2004-03-11 Fuji Photo Film Co Ltd Light emitting device
WO2004038759A2 (en) 2002-08-23 2004-05-06 Dahm Jonathan S Method and apparatus for using light emitting diodes
US7084935B2 (en) * 2002-08-28 2006-08-01 Adaptive Micro Systems, Llc Display device with molded light guide
US7008795B2 (en) * 2002-09-20 2006-03-07 Mitsubishi Electric Research Labs, Inc. Multi-way LED-based chemochromic sensor
US6822991B2 (en) 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
US6880954B2 (en) 2002-11-08 2005-04-19 Smd Software, Inc. High intensity photocuring system
WO2004049462A1 (en) 2002-11-26 2004-06-10 Stockeryale, (Irl), Limited An illuminator and production method
US6708501B1 (en) * 2002-12-06 2004-03-23 Nanocoolers, Inc. Cooling of electronics by electrically conducting fluids
TW571449B (en) 2002-12-23 2004-01-11 Epistar Corp Light-emitting device having micro-reflective structure
US7465909B2 (en) 2003-01-09 2008-12-16 Con-Trol-Cure, Inc. UV LED control loop and controller for causing emitting UV light at a much greater intensity for UV curing
US7211299B2 (en) 2003-01-09 2007-05-01 Con-Trol-Cure, Inc. UV curing method and apparatus
US7175712B2 (en) 2003-01-09 2007-02-13 Con-Trol-Cure, Inc. Light emitting apparatus and method for curing inks, coatings and adhesives
US6930371B2 (en) * 2003-02-03 2005-08-16 International Rectifier Corporation Temperature-sensing diode
EP1590994B1 (en) * 2003-02-07 2016-05-18 Panasonic Intellectual Property Management Co., Ltd. Metal base wiring board for retaining light emitting elements, light emitting source, lighting apparatus, and display apparatus
GB0304761D0 (en) 2003-03-01 2003-04-02 Integration Technology Ltd Ultraviolet curing
US20040184270A1 (en) * 2003-03-17 2004-09-23 Halter Michael A. LED light module with micro-reflector cavities
US20040183081A1 (en) 2003-03-20 2004-09-23 Alexander Shishov Light emitting diode package with self dosing feature and methods of forming same
US20040195947A1 (en) 2003-04-04 2004-10-07 Clark Jason Wilfred High brightness LED fixture for replacing high intensity dishcharge (HID) lamps
US6903380B2 (en) 2003-04-11 2005-06-07 Weldon Technologies, Inc. High power light emitting diode
US20040206970A1 (en) 2003-04-16 2004-10-21 Martin Paul S. Alternating current light emitting device
CA2522616A1 (en) 2003-04-24 2004-11-11 Chromnomotion Imaging Applications, Inc. Solid state light engine optical system
ATE474332T1 (en) 2003-05-02 2010-07-15 Univ College Cork Nat Univ Ie LIGHT-EMITTING MEASUREMENT STRUCTURES WITH HIGH HEIGHT-TO-WIDTH RATIO AND QUASI-PARABOLIC SIDEWALLS AND PRODUCTION THEREOF
US7095053B2 (en) 2003-05-05 2006-08-22 Lamina Ceramics, Inc. Light emitting diodes packaged for high temperature operation
JP2005056653A (en) 2003-08-01 2005-03-03 Fuji Photo Film Co Ltd Light source device
JP4314911B2 (en) 2003-08-20 2009-08-19 スタンレー電気株式会社 Vehicle headlamp
US7102172B2 (en) * 2003-10-09 2006-09-05 Permlight Products, Inc. LED luminaire
ES2405759T3 (en) 2003-10-10 2013-06-03 Federal Signal Corporation Light assembly
WO2005043598A2 (en) 2003-10-31 2005-05-12 Phoseon Technology, Inc. Use of potting gels for fabricating microoptic arrays
EP1678442B8 (en) 2003-10-31 2013-06-26 Phoseon Technology, Inc. Led light module and manufacturing method
WO2005043954A2 (en) 2003-10-31 2005-05-12 Phoseon Technology, Inc. Series wiring of highly reliable light sources
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
TWI257718B (en) 2004-03-18 2006-07-01 Phoseon Technology Inc Direct cooling of LEDs
WO2005091392A1 (en) 2004-03-18 2005-09-29 Phoseon Technology, Inc. Micro-reflectors on a substrate for high-density led array
EP1743384B1 (en) 2004-03-30 2015-08-05 Phoseon Technology, Inc. Led array having array-based led detectors
DE602005027201D1 (en) 2004-04-12 2011-05-12 Phoseon Technology Inc HIGH DENSITY LED ARRAY
US8077305B2 (en) 2004-04-19 2011-12-13 Owen Mark D Imaging semiconductor structures using solid state illumination
KR101288758B1 (en) 2004-12-30 2013-07-23 포세온 테크날러지 인코퍼레이티드 Methods and systems relating to light sources for use in industrial processes
US7642527B2 (en) 2005-12-30 2010-01-05 Phoseon Technology, Inc. Multi-attribute light effects for use in curing and other applications involving photoreactions and processing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8496356B2 (en) 2002-05-08 2013-07-30 Phoseon Technology, Inc. High efficiency solid-state light source and methods of use and manufacture
US8637332B2 (en) 2004-03-18 2014-01-28 Phoseon Technology, Inc. Micro-reflectors on a substrate for high-density LED array

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