WO2005086633A3 - Buried-contact solar cells with self-doping contacts - Google Patents

Buried-contact solar cells with self-doping contacts Download PDF

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Publication number
WO2005086633A3
WO2005086633A3 PCT/US2005/003738 US2005003738W WO2005086633A3 WO 2005086633 A3 WO2005086633 A3 WO 2005086633A3 US 2005003738 W US2005003738 W US 2005003738W WO 2005086633 A3 WO2005086633 A3 WO 2005086633A3
Authority
WO
WIPO (PCT)
Prior art keywords
buried
self
contact solar
solar cells
contact
Prior art date
Application number
PCT/US2005/003738
Other languages
French (fr)
Other versions
WO2005086633A2 (en
Inventor
James Gee
Peter Hacke
Original Assignee
Advent Solar Inc
James Gee
Peter Hacke
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advent Solar Inc, James Gee, Peter Hacke filed Critical Advent Solar Inc
Priority to CN2005800041566A priority Critical patent/CN1981376B/en
Priority to CA002596961A priority patent/CA2596961A1/en
Priority to EP05752100A priority patent/EP1733426A4/en
Priority to JP2006552305A priority patent/JP2007521669A/en
Priority to AU2005220701A priority patent/AU2005220701A1/en
Publication of WO2005086633A2 publication Critical patent/WO2005086633A2/en
Publication of WO2005086633A3 publication Critical patent/WO2005086633A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A buried-contact solar cell, in-process buried-contact solar cell components and methods for making buried contact solar cells wherein a self-doping contact material is placed in a plurality of buried-contact surface grooves. By combining groove doping and metallization steps, the resulting solar cell is simpler and more economical to manufacture.
PCT/US2005/003738 2004-02-05 2005-02-04 Buried-contact solar cells with self-doping contacts WO2005086633A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2005800041566A CN1981376B (en) 2004-02-05 2005-02-04 Buried-contact solar cells with self-doping contacts
CA002596961A CA2596961A1 (en) 2004-02-05 2005-02-04 Buried-contact solar cells with self-doping contacts
EP05752100A EP1733426A4 (en) 2004-02-05 2005-02-04 Buried-contact solar cells with self-doping contacts
JP2006552305A JP2007521669A (en) 2004-02-05 2005-02-04 Buried contact solar cell with self-doping contact
AU2005220701A AU2005220701A1 (en) 2004-02-05 2005-02-04 Buried-contact solar cells with self-doping contacts

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US54245404P 2004-02-05 2004-02-05
US54239004P 2004-02-05 2004-02-05
US60/542,454 2004-02-05
US60/542,390 2004-02-05
US11/050,182 US7335555B2 (en) 2004-02-05 2005-02-03 Buried-contact solar cells with self-doping contacts
US11/050,182 2005-02-03

Publications (2)

Publication Number Publication Date
WO2005086633A2 WO2005086633A2 (en) 2005-09-22
WO2005086633A3 true WO2005086633A3 (en) 2006-10-19

Family

ID=34831069

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/003738 WO2005086633A2 (en) 2004-02-05 2005-02-04 Buried-contact solar cells with self-doping contacts

Country Status (8)

Country Link
US (1) US7335555B2 (en)
EP (1) EP1733426A4 (en)
JP (1) JP2007521669A (en)
KR (1) KR20060125887A (en)
CN (1) CN1981376B (en)
AU (1) AU2005220701A1 (en)
CA (1) CA2596961A1 (en)
WO (1) WO2005086633A2 (en)

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Publication number Priority date Publication date Assignee Title
US8309949B2 (en) 2005-01-20 2012-11-13 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate

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