WO2005085829A1 - Feldeffekttransistor für messungen an biokomponenten - Google Patents
Feldeffekttransistor für messungen an biokomponenten Download PDFInfo
- Publication number
- WO2005085829A1 WO2005085829A1 PCT/EP2005/002128 EP2005002128W WO2005085829A1 WO 2005085829 A1 WO2005085829 A1 WO 2005085829A1 EP 2005002128 W EP2005002128 W EP 2005002128W WO 2005085829 A1 WO2005085829 A1 WO 2005085829A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- θate
- layer
- source
- drain
- Prior art date
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
- G01N33/483—Physical analysis of biological material
- G01N33/487—Physical analysis of biological material of liquid biological material
- G01N33/48707—Physical analysis of biological material of liquid biological material by electrical means
- G01N33/48728—Investigating individual cells, e.g. by patch clamp, voltage clamp
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
Definitions
- the invention relates to a device for carrying out measurements on biocomponents, in particular on living cells, with at least one field effect transistor which has a source, a drain and a channel region connecting them on a substrate, on which a ⁇ ate electrode is arranged, which is electrically isolated from the channel area by a thin insulating layer.
- Such a device is known from DE 196 23 517 Cl. It has a field effect transistor; in which the ⁇ ate electrode is connected in an electrically conductive manner via a conductor track to a contact area (pad) bounded by an electrical insulator and which is dimensioned for connection to a living biological cell in a nutrient solution.
- the field effect transistor has a substrate made of silicon, into which a trough-shaped semiconductor layer of a first charge carrier type is embedded. Doped drain and source regions, between which a channel region is formed, are arranged in this semiconductor layer.
- the ⁇ ate electrode consists of polysilicon and covers the entire channel area and the adjacent edges of the drain and source.
- the ⁇ ate electrode forms an equipotential surface which distributes an electrical potential applied to it over the entire channel length extending from the drain to the source, so that the potential also in the saturation mode of the field effect transistor if there is an asymmetrical, one-sided distribution along the channel length sets the free charge carriers in the channel area, to the places where the channel area is most sensitive.
- the device has the disadvantage that its measuring sensitivity is greatly reduced if the contact area connected to the ⁇ ate is only partially covered by the cell, so that the nutrient solution in which the cell is arranged comes into contact with the other areas of the contact area ,
- the decrease in measuring sensitivity is mainly caused by the fact that the biological cell enters the contact area and thus the ⁇ ate electrode, which is essentially capacitively coupled in, corresponds to the output voltage of an equivalent voltage source with a high source resistance. Since the nutrient solution is relatively low-resistance due to the ions contained in it compared to the source resistance, the measurement signal applied to the ⁇ ate is reduced accordingly when the equivalent voltage source is loaded with the electrical resistance of the nutrient solution.
- the cell signal to be measured is then practically short-circuited by the nutrient solution lying at a reference potential, ie the major part of the voltage is not present at the ⁇ ate but falls at the source resistance of the equivalent voltage source. It is also unfavorable that the arrangement formed from the ⁇ ate electrode, the conductor track and the contact area has a relatively large electrical capacitance to the nutrient solution, as a result of which the measurement signal is additionally weakened.
- the ⁇ ate electrode has at least two electrode regions arranged laterally next to one another, which are spaced apart from one another and electrically insulated from one another transversely to the direction in which the channel region connects the source to the drain.
- the ⁇ ate electrode is therefore advantageously divided into a plurality of electrode regions which are electrically insulated from one another and which are offset from one another transversely to a line which connects the source and drain directly to one another and approximately corresponds to the current flow direction in the channel region.
- the ⁇ ate electrode is only partially covered in such a way that at least a first electrode area of the ⁇ ate electrode is in direct contact with the nutrient solution and at least a second electrode area is completely covered by the biocomponent and sealed by it against the nutrient solution, becomes a direct equipotential bonding between the first and the second
- the divided ⁇ ate electrode reduces the capacitive load on the measurement signal due to parasitic capacitances compared to a device with a one-piece ⁇ ate electrode.
- the device advantageously enables a relatively high sensitivity to measurement and detection even if the biocomponent only covers the ⁇ ate electrode in some areas.
- the electrical potentials present at the individual electrode areas can be coupled into the sub-area of the channel area in which the channel area has its greatest sensitivity, in particular when the field effect transistor is operating in the saturation area.
- the device is preferably designed such that the biocomponent to be measured can be immobilized directly on the ⁇ ate electrode. The device enables high-resistance signal tapping at the biocomponent.
- the device has at least three, in particular at least five and preferably at least seven, of the electrode regions in a row next to one another. If the biocomponent only partially covers the ⁇ ate electrode, this can result in an even greater overall measurement sensitivity and measurement reliability with different arrangements of the biocomponent relative to the ⁇ ate electrode.
- the edges of the drain and the source adjoining the channel region run approximately parallel to one another, with mutually facing electrode edges of mutually adjacent electrode regions each running approximately at right angles to the edges of the drain and / or the source adjoining the channel region.
- the dividing lines between mutually adjacent electrode regions then run approximately in the direction in which the electrical current flows in the channel region.
- an electrical insulator preferably designed as an oxide layer, is in each case on the drain and the source.
- Layer is arranged, the thickness of which is a factor of at least 10, optionally 30 and preferably 50 greater than the thickness of the insulating layer, the electrode regions and optionally the insulating layer laterally directly adjoining the edge of the insulator layer facing the channel region.
- the area that covers the individual electrode areas on the channel area is less than or equal to the area covered by a focal contact of a biological cell that can be immobilized on the ⁇ ate electrode, and if the area that covers the individual electrode areas on the Channel areas cover in particular between 0.5 ⁇ m 2 . and 5 ⁇ m 2 . is.
- the insulating layer is designed as a silicon oxide layer, in particular as a silicon dioxide layer
- the ⁇ ate electrode is designed as a noble metal layer, in particular as a palladium layer, with a between the insulating layer and the ⁇ ate electrode
- Poly-silicon layer is arranged, which in the between adjacent electrode areas
- the ⁇ ate electrode can then be structured during the manufacture of the device by the intermediary of the intermediate layer.
- the channel region on the doped semiconductor layer (this can be formed by the substrate or a trough-shaped region on the substrate), in order to subsequently produce the electrically insulating silicon oxide layer ( ⁇ ateoxide) on the channel region.
- a poly-silicon layer is then applied over the entire surface and then structured in such a way that it only adheres to the
- the ⁇ ate electrode is later to be arranged. Structured layers to form conductor tracks are now applied to the substrate. Electrically insulating layers are arranged between the individual layers of the conductor track layers. A passivation layer is applied as the top layer. Then, depressions are etched over the locations at which the polysilicon is located, which extend as far as the polysilicon layer serving as an etching stop. If the ⁇ ate electrode should only partially cover the bottom of the wells, the poly-silicon layer is structured in the wells. Then a metallization made of a precious metal is applied over the entire surface.
- silicon diffuses from the poly-silicon layer into the noble metal layer and forms a noble metal silicide in a region of the noble metal layer that is spaced from the surface of the noble metal layer.
- the noble metal adheres better to the poly-silicon layer than to the rest of the surface, so that it can be structured mechanically, for example with the aid of ultrasound waves, in accordance with the structure of the poly-silicon layer.
- the precious metal only comes off at those points that are not in contact with the poly-silicon layer.
- the device according to the invention is preferably designed such that the biocomponent can be brought into direct contact with the ⁇ ate electrode arranged on the channel area, i.e. the biocomponent is preferably located on the side of the ⁇ ate electrode facing away from the channel area directly above the channel area during the measurement. This results in a small parasitic capacitance at the ⁇ ate electrode.
- the ⁇ ate electrode preferably adjoins a measuring chamber or a trough for receiving the biocomponent (s) and, if appropriate, a nutrient solution containing them.
- the individual electrode regions are each connected via a conductor track to an electrical contact element (pad) which is arranged for contacting the biocomponent in a contact region for the biocomponent spaced from the ⁇ ate electrode.
- an electrical contact element pad
- the device has a plurality of the field effect transistors, these field effect transistors preferably being arranged next to one another on a common semiconductor substrate in the form of a matrix. The device then enables spatially resolved measurement signal detection on the biocomponents.
- At least one electrode region of the ⁇ ate electrode and / or a stimulation electrode which is present in addition to the electrode regions and is adjacent to these is connected to an electrical stimulation device for the biocomponent.
- the stimulation device has an electrical voltage source; which can be connected to the electrode area and / or stimulation electrode via an electrical switch.
- the propagation of electrical signals and / or signal patterns within the cell culture can be examined on cell cultures which have a plurality of nerve cells networked with one another.
- an electrical stimulation potential is first applied to the at least one electrode area and / or the stimulation electrode, then removed again in order to then measure the response of the cell (s) to the stimulation potential with the aid of the electrode areas.
- FIG. 1 is a three-dimensional partial view of a device having a field effect transistor for carrying out measurements on biocomponents, the device being shown in cross section in the area of the field effect transistor,
- FIG. 2 shows a plan view of the device shown in FIG. 1 in the region of the field effect transistor, a structured ⁇ ate coating being recognizable
- Fig. 3 is a partial plan view of the device in the ⁇ use position, and 4 shows a cross section through the device, wherein parasitic capacitances are shown schematically.
- a device for carrying out extracellular cell potential measurements on living biological cells has a semiconductor chip; in which at least one field effect transistor 1 is integrated, which is connected to a measuring amplifier not shown in the drawing.
- the semiconductor chip has a doped semiconductor layer 2 of a first charge carrier type; which is formed by the substrate of the semiconductor chip.
- the semiconductor layer 2 is embedded in the semiconductor substrate as a trough-shaped doped region (well).
- Doped regions of a second charge carrier type are arranged on the semiconductor layer 2, one region of which forms the source 3a and the other region forms the drain 3b of the transistor 1 when the latter is connected to the measuring amplifier.
- the source 3a and the drain 3b are embedded in the surface of the semiconductor layer 2 and are laterally spaced apart from one another by a channel region 4 located between them.
- the source 3a is connected to a source contact 5a and the drain 3b is connected to a drain contact 5b, which are connected to the measuring amplifier. 1 that the source contact 5a is also connected to the semiconductor layer 2 (substrate).
- An insulating layer 6 is arranged on the channel region 4, which is designed as a thin oxide layer and extends continuously over the channel region 4 and the border regions 7a, 7b of the source 3a and the drain 3b adjoining it on both sides.
- a structured poly-silicon layer is applied to the insulating layer ⁇ , on which an ⁇ ate electrode, generally designated 8, is arranged, which is formed by a metallization.
- the metallization consists of a corrosion-resistant noble metal, preferably palladium.
- a metal silicide layer is formed in the transition region from the poly-silicon layer to the ⁇ ate electrode 8.
- the ⁇ ate electrode 8 adheres well to the polysilicon layer or is firmly connected to it.
- the ⁇ te electrode 8 borders directly on a receiving space 9 which is designed to receive living cells 14 located in a nutrient solution 15.
- the ⁇ ate electrode 8 has a plurality of electrode regions 10 arranged laterally next to one another; the parallel to the
- Double arrow 1 1 marked direction in which the channel area 4 the source 3a with the
- Drain 3b connects, spaced apart and electrically isolated from each other.
- the individual electrode regions 10 are each approximately rectangular in shape and extend in the direction 1 1 in which the channel region 4
- Source 3a connects to the drain 3b, without interruption via the channel region 4.
- electrode regions 10 each cover the edge region 7a of the source 3a adjoining the channel region 4 and the opposite end of the edge region 7b of the drain 3b adjoining the channel region 4.
- Adjacent electrode regions 10 are each spaced apart from one another by a narrow space which, when viewed from the top of the semiconductor chip, runs approximately at right angles to the edges of the source 3a and the drain 3b adjacent to the channel region 4. Parallel to these edges, the electrode regions 10 are offset in a straight line from one another, so that overall there is an approximately rectangular elongated ⁇ ate electrode 8 consisting of several electrode regions 10 arranged in a row, the dimensions of which are adapted to those of a biological cell. It can be seen in FIG. 2 that the source 3a and the drain 3b each extend without interruption over all electrode regions 10 of the ⁇ ate electrode 8.
- An electrical insulator layer 12a, 12b which is designed as a thick oxide layer (field oxide layer) and has a greater thickness than the insulating layer ⁇ , is arranged on the source 3a and the drain 3b at a distance from the channel region 4.
- the electrode areas 10 and the insulating layer ⁇ laterally adjoin at one end to the insulator layer 12a located on the source 3a and at the other end to the insulator layer 12b located on the drain 3b.
- Fig. 3 shows a plan view of the device in the ⁇ use position. It can be clearly seen that a biological cell 14 is immobilized on the surface of the semiconductor chip, which is arranged in a nutrient solution 15 (FIG. 4), which is at an electrical reference potential, for example that at which, via a reference electrode not shown in the drawing Source contact 5a applied potential.
- the cell 14 is positioned relative to the ⁇ ate electrode 8 such that it completely covers some of the electrode regions 10.
- the cell adheres to these electrode areas 10 and to the surface areas of the semiconductor chip that delimit them and are electrically insulated from the electrode areas 10 such that the cell 14 seals these electrode areas 10 against the nutrient solution 15.
- the remaining electrode regions 10 have contact with the nutrient solution 15 at least in regions and are therefore at the reference potential applied to the nutrient solution 15. Since the ⁇ ate electrode 8 is subdivided into several electrode regions 10, it is avoided that the cell potential coupled from the cell 1 via the cell membrane into the electrode regions 10 sealed by the cell 14 against the nutrient solution 15 is drawn to the comparatively low-resistance reference potential. The device therefore enables an accurate measurement of cell potential changes even when the ⁇ ate electrode 8 is only partially covered by the cell 14.
- the device therefore enables a high measurement sensitivity and broadband, largely distortion-free measurement signal acquisition.
- FIG 4 also shows an ohmic equivalent resistance R Sea ⁇ , which simulates the seal resistance via which the area of the cell membrane, which is arranged within the contact area of the cell and is spaced from the edge of the contact area, is connected to the electrical capacitance, that is formed between the area of the passivation layer 1 3 and the semiconductor layer 2 located outside the contact area of the cell.
- the cell 14 seals against the surface of the passivation layer 13 when it is attached to it.
- the distance between the cell membrane and the passivation layer 13 is greatly enlarged for reasons of clarity.
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- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Biomedical Technology (AREA)
- Molecular Biology (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Hematology (AREA)
- Medicinal Chemistry (AREA)
- Food Science & Technology (AREA)
- Urology & Nephrology (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/591,413 US7470962B2 (en) | 2004-03-02 | 2005-03-01 | Field effect transistor for measuring biocomponents |
JP2007501193A JP2007526466A (ja) | 2004-03-02 | 2005-03-01 | バイオコンポーネントを測定するための電解効果トランジスタ |
EP05715622A EP1740935A1 (de) | 2004-03-02 | 2005-03-01 | Feldeffekttransistor für messungen an biokomponenten |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004010635.5 | 2004-03-02 | ||
DE102004010635A DE102004010635B4 (de) | 2004-03-02 | 2004-03-02 | Vorrichtung zur Durchführung von Messungen an Biokomponenten |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005085829A1 true WO2005085829A1 (de) | 2005-09-15 |
Family
ID=34894962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2005/002128 WO2005085829A1 (de) | 2004-03-02 | 2005-03-01 | Feldeffekttransistor für messungen an biokomponenten |
Country Status (6)
Country | Link |
---|---|
US (1) | US7470962B2 (de) |
EP (1) | EP1740935A1 (de) |
JP (1) | JP2007526466A (de) |
CN (1) | CN100516861C (de) |
DE (1) | DE102004010635B4 (de) |
WO (1) | WO2005085829A1 (de) |
Cited By (1)
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CN103558254A (zh) * | 2013-11-15 | 2014-02-05 | 中国科学院上海微系统与信息技术研究所 | 一种基于垂直结构隧穿场效应晶体管的生物传感器及其制备方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5150893B2 (ja) * | 2006-07-13 | 2013-02-27 | 国立大学法人富山大学 | 酸化還元物質の信号増幅検出方法及びその測定装置 |
JP2009250631A (ja) * | 2008-04-01 | 2009-10-29 | Mitsumi Electric Co Ltd | センサ製造方法 |
JP5181837B2 (ja) * | 2008-05-28 | 2013-04-10 | ミツミ電機株式会社 | センサ及びその製造方法 |
US9459234B2 (en) * | 2011-10-31 | 2016-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”) | CMOS compatible BioFET |
CN102520044A (zh) * | 2011-11-07 | 2012-06-27 | 浙江工业大学 | 基于标准cmos工艺的细胞膜电位传感器 |
US10309924B2 (en) | 2013-06-07 | 2019-06-04 | Cornell University | Floating gate based sensor apparatus and related floating gate based sensor applications |
DE102014008606B3 (de) * | 2014-06-10 | 2015-08-27 | Universität Rostock | Elektrophysiologische Messanordnung und elektrophysiologisches Messverfahren |
CN104792848B (zh) * | 2015-01-23 | 2017-11-24 | 南京华印半导体有限公司 | 一种基于印刷晶体管的pH检测标签 |
TWI619941B (zh) * | 2015-12-28 | 2018-04-01 | 國立臺灣大學 | 生物感測器裝置 |
WO2020191672A1 (zh) * | 2019-03-27 | 2020-10-01 | 京东方科技集团股份有限公司 | 生物检测芯片、生物检测装置及其检测方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3835339A1 (de) * | 1987-10-16 | 1989-04-27 | Fraunhofer Ges Forschung | Anordnung zur untersuchung von ionen, atomen und molekuelen in gasen und fluessigkeiten |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2541081B2 (ja) * | 1992-08-28 | 1996-10-09 | 日本電気株式会社 | バイオセンサ及びバイオセンサの製造・使用方法 |
DE19601488C1 (de) * | 1996-01-17 | 1997-05-28 | Itt Ind Gmbh Deutsche | Verfahren zum Herstellen einer Meßeinrichtung sowie danach hergestellte Meßeinrichtung |
DE19623517C1 (de) * | 1996-06-12 | 1997-08-21 | Siemens Ag | MOS-Transistor für biotechnische Anwendungen |
KR20010041147A (ko) * | 1998-02-20 | 2001-05-15 | 해리 제이. 레온 하르트 | 분자 생물학적 분석 및 진단을 위한 진보된 능동 장치 및 방법 |
DE19827957C2 (de) * | 1998-05-27 | 2000-06-29 | Micronas Intermetall Gmbh | Verfahren und Vorrichtung zur Messung einer Zustandsgröße |
CA2338456A1 (en) * | 1998-07-23 | 2000-02-03 | Symbiosis Gmbh | Assembly and apparatus for extracellular electrophysiological recordings and their use |
DE19840157C2 (de) * | 1998-09-03 | 2000-10-05 | Axel Lorke | Ortsaufgelöster Potential-Sensor und -Stimulator auf Halbleiterbasis |
WO2000051191A1 (en) * | 1999-02-22 | 2000-08-31 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | A hybrid electrical device with biological components |
US6602399B1 (en) * | 2000-03-22 | 2003-08-05 | Max-Planck-Gesellschaft Zur Forderung Der Wissenchaften E.V. | Signal recording of a receptor-effector-system by an extracellular planar potential-sensitive electrode |
KR100991573B1 (ko) * | 2000-12-11 | 2010-11-04 | 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 | 나노센서 |
JP2003322633A (ja) * | 2002-05-01 | 2003-11-14 | Seiko Epson Corp | センサセル、バイオセンサ及びこれらの製造方法 |
EP1367659B1 (de) * | 2002-05-21 | 2012-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Organischer Feldeffekt-Transistor |
US7989851B2 (en) * | 2002-06-06 | 2011-08-02 | Rutgers, The State University Of New Jersey | Multifunctional biosensor based on ZnO nanostructures |
US7135728B2 (en) * | 2002-09-30 | 2006-11-14 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
AU2003285092A1 (en) * | 2002-10-29 | 2004-05-25 | Cornell Research Foundation, Inc. | Chemical-sensitive floating gate field effect transistor |
IL152746A0 (en) * | 2002-11-11 | 2003-06-24 | Yissum Res Dev Co | Biosensor for molecules |
TWI253502B (en) * | 2003-08-26 | 2006-04-21 | Ind Tech Res Inst | A structure and manufacturing process of a nano device transistor for a biosensor |
JP4669213B2 (ja) * | 2003-08-29 | 2011-04-13 | 独立行政法人科学技術振興機構 | 電界効果トランジスタ及び単一電子トランジスタ並びにそれを用いたセンサ |
DE10361136B4 (de) * | 2003-12-23 | 2005-10-27 | Infineon Technologies Ag | Halbleiterdiode und IGBT |
US7692249B2 (en) * | 2004-01-21 | 2010-04-06 | Intel Corporation | End functionalization of carbon nanotubes |
US8110868B2 (en) * | 2005-07-27 | 2012-02-07 | Infineon Technologies Austria Ag | Power semiconductor component with a low on-state resistance |
KR100714924B1 (ko) * | 2005-09-29 | 2007-05-07 | 한국전자통신연구원 | 나노갭 전극소자의 제작 방법 |
-
2004
- 2004-03-02 DE DE102004010635A patent/DE102004010635B4/de not_active Expired - Fee Related
-
2005
- 2005-03-01 US US10/591,413 patent/US7470962B2/en not_active Expired - Fee Related
- 2005-03-01 JP JP2007501193A patent/JP2007526466A/ja active Pending
- 2005-03-01 CN CNB2005800068268A patent/CN100516861C/zh not_active Expired - Fee Related
- 2005-03-01 WO PCT/EP2005/002128 patent/WO2005085829A1/de active Application Filing
- 2005-03-01 EP EP05715622A patent/EP1740935A1/de not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3835339A1 (de) * | 1987-10-16 | 1989-04-27 | Fraunhofer Ges Forschung | Anordnung zur untersuchung von ionen, atomen und molekuelen in gasen und fluessigkeiten |
Non-Patent Citations (3)
Title |
---|
BAUMANN W H ET AL: "Microelectronic sensor system for microphysiological application on living cells", SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 55, no. 1, 25 April 1999 (1999-04-25), pages 77 - 89, XP004175066, ISSN: 0925-4005 * |
KRAUSE M ET AL: "Extended gate electrode arrays for extracellular signal recordings", SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 70, no. 1-3, 1 November 2000 (2000-11-01), pages 101 - 107, XP004224587, ISSN: 0925-4005 * |
STETT A ET AL: "TWO-WAY SILICON-NEURON INTERFACE BY ELECTRICAL INDUCTION", PHYSICAL REVIEW E. STATISTICAL PHYSICS, PLASMAS, FLUIDS, AND RELATED INTERDISCIPLINARY TOPICS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 55, no. 2, February 1997 (1997-02-01), pages 1779 - 1782, XP000913528, ISSN: 1063-651X * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103558254A (zh) * | 2013-11-15 | 2014-02-05 | 中国科学院上海微系统与信息技术研究所 | 一种基于垂直结构隧穿场效应晶体管的生物传感器及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1926428A (zh) | 2007-03-07 |
DE102004010635B4 (de) | 2006-10-05 |
US7470962B2 (en) | 2008-12-30 |
JP2007526466A (ja) | 2007-09-13 |
US20070284630A1 (en) | 2007-12-13 |
DE102004010635A1 (de) | 2005-09-29 |
EP1740935A1 (de) | 2007-01-10 |
CN100516861C (zh) | 2009-07-22 |
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