WO2005084183A2 - Electronic interconnect devices - Google Patents

Electronic interconnect devices Download PDF

Info

Publication number
WO2005084183A2
WO2005084183A2 PCT/US2004/004748 US2004004748W WO2005084183A2 WO 2005084183 A2 WO2005084183 A2 WO 2005084183A2 US 2004004748 W US2004004748 W US 2004004748W WO 2005084183 A2 WO2005084183 A2 WO 2005084183A2
Authority
WO
WIPO (PCT)
Prior art keywords
carbon nanotubes
composite substrate
substrate material
conducting
percent
Prior art date
Application number
PCT/US2004/004748
Other languages
French (fr)
Other versions
WO2005084183A3 (en
Inventor
Donald P. Cullen
Original Assignee
Macdermid, Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macdermid, Incorporated filed Critical Macdermid, Incorporated
Priority to EP04821363A priority Critical patent/EP1634342B1/en
Priority to JP2006517073A priority patent/JP4374019B2/en
Publication of WO2005084183A2 publication Critical patent/WO2005084183A2/en
Publication of WO2005084183A3 publication Critical patent/WO2005084183A3/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0242—Shape of an individual particle
    • H05K2201/026—Nanotubes or nanowires
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0323—Carbon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1142—Conversion of conductive material into insulating material or into dissolvable compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application

Definitions

  • the present invention relates to a method of fabricating an electronic interconnect device using direct imaging of dielectric composite material by the inclusion of a conducting material in the composite material that becomes nonconducting through exposure to electromagnetic radiation.
  • Nanotubes have been identified as materials of interest for a variety of applications. Nanotubes have been contemplated for use in such products as compact fuel cells, fluorescent lights, and sensors.
  • Carbon nanotubes are two-dimensional sheets of graphite that are rolled and joined into tubular structures. In graphite, the orbits of its outer electrons form three lobes that flare outward at 120-degree angles.
  • Graphene a singe atomic layer of graphite, consists of a two-dimensional honeycomb structure of bonded carbon atoms. Each lobe bonds with a lobe of a neighboring carbon atom, forming a honeycomb pattern, forming bonds between the carbon atoms that are stronger than those of diamond.
  • Graphite becomes extremely stiff, when the opposite edges of a.rectangular sheet are connected to form a cylinder (nanotube).
  • Carbon nanotubes generally have diameters in the range of from 1 to 100 nanometers and may range in length up to about 100 micrometers, although other diameters and lengths are possible.
  • Carbon nanotubes can have either a single-wall construction (SWNT) or a multi-wall construction (MWNT).
  • SWNT single-wall construction
  • MWNT multi-wall construction
  • Single-wall carbon nanotubes are more pure conductors than multi-wall carbon nanotubes and generally have a diameter of approximately 1 to 4 nanometers.
  • multi-wall carbon nanotubes generally have a diameter of approximately 2 to 40 nanometers.
  • Multi-wall carbon nanotubes can range from metallic to insulating, and because there may be differences between each tube in a multi-wall construction, single-wall carbon nanotubes are preferred for many applications.
  • Single-walled carbon nanotubes can be either metals or semiconductors, and their electrical properties can rival, or even exceed, the best metals or semiconductors known. The remarkable electrical properties of single-walled carbon nanotubes stem from the unusual electronic structure of the graphene.
  • Nanotubes can be either conductors or semiconductors, depending on how the tube is rolled up.
  • Carbon nanotubes are grown by combining a source of carbon with a catalytic nanostructured material, such as iron or cobalt, at elevated temperatures.
  • Sources of carbon employed to date include bulk graphite, hydrocarbons and carbon monoxide.
  • the catalyst has a high solubility for carbon.
  • the carbon in the particle links up to form graphene and wraps around the catalyst to form a cylinder.
  • Subsequent growth occurs from the continuous addition of carbon to the base of the tube at the nanoparticle/tube interface.
  • Creating the proper conditions from growth can be done in a variety of ways, including bulk synthesis techniques, such as arc synthesis and laser assisted growth.
  • An alternative technique is to grow the nanotubes directly on the substrate, for example, by using chemical vapor deposition.
  • Nanotubes may be rendered non-conductive through the application of electromagnetic radiation.
  • the radiation may be applied in such a manner as to cause partial or full destruction of the tubular structure, resulting in a loss of bulk conductivity.
  • researchers have determined that single-walled nanotubes ignite when exposed to a conventional photographic flash, as described by Ajayan et al., "Nanotubes in a Flash - Ignition and Reconstruction", Science, Vol. 296, April 26, 2002, the subject matter of which is herein incorporated by reference in its entirety. This photoeffect occurs for single-walled carbon nanotubes prepared by carbon arc, laser ablation, or chemical vapor deposition techniques upon expose to a camera flash at close range.
  • U.S. Patent No. 6,420,092 to Yang et al. discloses a fabrication method for a dielectric material with a low dielectric constant using a low dielectric constant nanotube.
  • the inventors found that using a nanotube for a dielectric layer results in low dielectric constant because of the existence of pores throughout the structure of the nanotube.
  • the nanotube was also found to have good thermal stability because it does not easily absorb moisture due to the low polarity of the nanotube wall.
  • the inventors of the 6,420,092 patent determined that the formation of the dielectric layer with a nanotube stabilizes the quality of the dielectric layer.
  • the use of the substrate material of the instant invention has an advantage over traditional electronic interconnection fabrication methods, because the process for forming circuits is a one-step exposure to electromagnetic radiation rather than the multi-step process used in conventional manufacturing.
  • Another advantage to the use of the novel material of the invention is the density of electronic interconnections that can be achieved. Limits on conventional circuitry are imposed by material processing limits greater than the resolution of radiation sources. In contrast, the distance between conducting and non-conducting areas of the material formed by the instant invention is limited only by the resolution of the exposing radiation.
  • the present invention comprises a method of making a composite substrate material comprising an insulating dielectric material, fibrous reinforcing material and a conducting material, and subsequently selectively exposing the conducting material in the composite substrate material to electromagnetic radiation to render portions of the conducting material non-conducting.
  • the conducting material consists of single-walled carbon nanotubes.
  • the carbon nanotubes function as both the conducting material and the fibrous reinforcing material.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS OF THE INVENTION The inventor has discovered that the addition of nanotubes to conventional composite substrate materials, comprising an insulating dielectric material and fibrous reinforcing material, produces a substrate that can be used to form a circuit in a printed wiring board in a one-step exposure to radiation, rather than the multi-step process used in conventional manufacturing.
  • the composite substrate material of the instant invention generally comprises an insulating dielectric material, a fibrous reinforcing material, and a conducting material. Other materials, including fillers may optionally be present in compositions of the instant invention.
  • the insulating dielectric material is generally selected from the group consisting of epoxy resins, polyamides, polyimides, tetrafluoroethylene (Teflon®), and liquid crystal materials. Other materials would also be known to those skilled in the art.
  • the fibrous reinforcing material is generally selected from the group consisting of glass fibers, carbon fibers, paper, and aromatic polyamide fibers, (i.e., Kevlar®). Other materials would also be known to those skilled in the art.
  • the fibrous reinforcing material is generally present in the composition at a concentration of about 25 to about 75 percent by volume, preferably about 40 to about 50 percent by volume.
  • the conducting material in the composition generally comprises carbon (graphite) nanotubes.
  • the carbon nanotubes are generally present in the composition at a concentration of about 40 to about 95 percent by volume, preferably about 70 to about 80 percent by volume.
  • the carbon nanotubes can also function as the fibrous reinforcing material due to their physical strength.
  • the carbon nanotubes are preferably present in the composition at a concentration of about 80 to about 99 percent by volume.
  • compositions of the instant invention can also be utilized in compositions of the instant invention to achieve the desired result.
  • Flow agents such as surfactants and silanes can be included in compositions of the invention.
  • Fillers such as barium sulfate, can also be added.
  • the composite substrate material is selectively exposed to electromagnetic radiation in a negative pattern to that of an intended electronic interconnect circuit.
  • Selective exposure of the composite substrate is accomplished by use of a laser or focused electron beam as the source of electromagnetic radiation or by exposing the composite substrate material though a phototool or photomask.
  • electromagnetic radiation i.e., light
  • the substrate can then be used as a circuit path, or as one layer comprising an electronic interconnection substrate.
  • the electromagnetic radiation is applied in such a manner as to cause partial or full destruction of the tubular nanotube structure, resulting in a loss of bulk conductivity.
  • the composite substrate material may comprise one of a series of circuit layers that may subsequently be joined using traditional innerlayer connectivity methods, including lamination, via formation, and plated through hole formation. Other methods would also be known to one skilled in the art.

Abstract

An improved method of fabricating an electronic interconnect device using direct imaging of dielectric composite material by the inclusion of a conducting material in the composite material that becomes non-conducting through exposure to electromagnetic radiation. The conducting material generally comprises single-wall carbon nanotubes.

Description

METHOD OF FABRICATING ELECTRONIC INTERCONNECT DEVICES USING DIRECT IMAGING OF DIELECTRIC COMPOSITE MATERIAL FIELD OF THE INVENTION The present invention relates to a method of fabricating an electronic interconnect device using direct imaging of dielectric composite material by the inclusion of a conducting material in the composite material that becomes nonconducting through exposure to electromagnetic radiation.
BACKGROUND OF THE INVENTION Since the 1970s, carbon nanotubes (or nanofibers) have been identified as materials of interest for a variety of applications. Nanotubes have been contemplated for use in such products as compact fuel cells, fluorescent lights, and sensors.
Carbon nanotubes are two-dimensional sheets of graphite that are rolled and joined into tubular structures. In graphite, the orbits of its outer electrons form three lobes that flare outward at 120-degree angles. Graphene, a singe atomic layer of graphite, consists of a two-dimensional honeycomb structure of bonded carbon atoms. Each lobe bonds with a lobe of a neighboring carbon atom, forming a honeycomb pattern, forming bonds between the carbon atoms that are stronger than those of diamond. Graphite becomes extremely stiff, when the opposite edges of a.rectangular sheet are connected to form a cylinder (nanotube). Carbon nanotubes generally have diameters in the range of from 1 to 100 nanometers and may range in length up to about 100 micrometers, although other diameters and lengths are possible.
Carbon nanotubes can have either a single-wall construction (SWNT) or a multi-wall construction (MWNT). Single-wall carbon nanotubes are more pure conductors than multi-wall carbon nanotubes and generally have a diameter of approximately 1 to 4 nanometers. On the other hand, multi-wall carbon nanotubes generally have a diameter of approximately 2 to 40 nanometers. Multi-wall carbon nanotubes can range from metallic to insulating, and because there may be differences between each tube in a multi-wall construction, single-wall carbon nanotubes are preferred for many applications. Experiments and theory have shown that single-walled carbon nanotubes can be either metals or semiconductors, and their electrical properties can rival, or even exceed, the best metals or semiconductors known. The remarkable electrical properties of single-walled carbon nanotubes stem from the unusual electronic structure of the graphene. Nanotubes can be either conductors or semiconductors, depending on how the tube is rolled up.
Carbon nanotubes are grown by combining a source of carbon with a catalytic nanostructured material, such as iron or cobalt, at elevated temperatures. Sources of carbon employed to date include bulk graphite, hydrocarbons and carbon monoxide. At elevated temperatures, the catalyst has a high solubility for carbon. The carbon in the particle links up to form graphene and wraps around the catalyst to form a cylinder. Subsequent growth occurs from the continuous addition of carbon to the base of the tube at the nanoparticle/tube interface. Creating the proper conditions from growth can be done in a variety of ways, including bulk synthesis techniques, such as arc synthesis and laser assisted growth. An alternative technique is to grow the nanotubes directly on the substrate, for example, by using chemical vapor deposition. Nanotubes may be rendered non-conductive through the application of electromagnetic radiation. The radiation may be applied in such a manner as to cause partial or full destruction of the tubular structure, resulting in a loss of bulk conductivity. Researchers have determined that single-walled nanotubes ignite when exposed to a conventional photographic flash, as described by Ajayan et al., "Nanotubes in a Flash - Ignition and Reconstruction", Science, Vol. 296, April 26, 2002, the subject matter of which is herein incorporated by reference in its entirety. This photoeffect occurs for single-walled carbon nanotubes prepared by carbon arc, laser ablation, or chemical vapor deposition techniques upon expose to a camera flash at close range. Ignition and burning occur when local increases in temperature are sufficient to initiate the oxidation of the carbon and propagate as more heat is released by the exothermic reaction. Heat confinement in nanostructures can thus lead to drastic structural reformation and, under oxidizing environments, induce ignition under conditions not expected for bulk materials. The heat pulse is created by light absorption by the nanotubes from a proximal light flash. Carbon nanotubes can be good conductors of electricity. They are currently used in lithium batteries, because their ability to conduct electricity facilitates recharging. Carbon nanotubes have also been suggested for use in electrochemical capacitors. U.S. Patent No. 6,031,711 to Tennent et al., the subject matter of which is herein incorporated by reference in its entirety, discloses the use of graphitic nanofibers, including tubular fullerenes, nanotubes, and fibrils, which have been functionalized by chemical substitution, as electrodes in electrochemical capacitors.
Single-wall carbon nanotubes have also been suggested for use in molecular logic and memory devices. U.S. Patent No. 6,423,583 to Avouris et al., the subject matter of which is herein incorporated by reference in its entirety, discloses a method of permanently modifying a single-wall carbon nanotube or a multi-wall carbon nanotube by using current induced electrical breakdown to eliminate individual nanotubes having a particular characteristic. The method is used to tailor properties of a composite nanotube by changing the proportion of component nanotubes. Similarly, published U.S. Patent Application No. 2002/0173083 Al to Avouris et al., the subject matter of which is herein incorporated by reference in its entirety, discloses a method of electrically-induced breakdown of a plurality of stray nanotubes.
U.S. Patent No. 6,472,705 to Bethune et al., the subject matter of which is herein incorporated by reference in its entirety, discloses the use of single-wall carbon nanotubes in microelectronic devices, such as Field effect transistors, wherein the insulating layer contains at least one closed cage molecule, such as fullerenes. Carbon nanotubes are defined as elongated fullerenes.
U.S. Patent No. 6,420,092 to Yang et al., the subject matter of which is herein incorporated by reference in its entirety, discloses a fabrication method for a dielectric material with a low dielectric constant using a low dielectric constant nanotube. The inventors found that using a nanotube for a dielectric layer results in low dielectric constant because of the existence of pores throughout the structure of the nanotube. The nanotube was also found to have good thermal stability because it does not easily absorb moisture due to the low polarity of the nanotube wall. The inventors of the 6,420,092 patent determined that the formation of the dielectric layer with a nanotube stabilizes the quality of the dielectric layer.
Traditional electronic interconnection fabrication techniques for printed wiring boards require multiple processing steps. In addition, the density of electronic interconnections is practically limited by the ability of the composite material to dissipate heat. The inventor of the present invention has determined that the addition of single-walled carbon nanotubes to conventional composite substrate materials produces an improved composite material that enables the formation of circuits on the composite substrate material through a one-step exposure to electromagnetic radiation.
The use of the substrate material of the instant invention has an advantage over traditional electronic interconnection fabrication methods, because the process for forming circuits is a one-step exposure to electromagnetic radiation rather than the multi-step process used in conventional manufacturing. Another advantage to the use of the novel material of the invention is the density of electronic interconnections that can be achieved. Limits on conventional circuitry are imposed by material processing limits greater than the resolution of radiation sources. In contrast, the distance between conducting and non-conducting areas of the material formed by the instant invention is limited only by the resolution of the exposing radiation.
SUMMARY OF THE INVENTION The present invention comprises a method of making a composite substrate material comprising an insulating dielectric material, fibrous reinforcing material and a conducting material, and subsequently selectively exposing the conducting material in the composite substrate material to electromagnetic radiation to render portions of the conducting material non-conducting. Preferably the conducting material consists of single-walled carbon nanotubes.
In an alternate embodiment, the carbon nanotubes function as both the conducting material and the fibrous reinforcing material. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS OF THE INVENTION The inventor has discovered that the addition of nanotubes to conventional composite substrate materials, comprising an insulating dielectric material and fibrous reinforcing material, produces a substrate that can be used to form a circuit in a printed wiring board in a one-step exposure to radiation, rather than the multi-step process used in conventional manufacturing.
The composite substrate material of the instant invention generally comprises an insulating dielectric material, a fibrous reinforcing material, and a conducting material. Other materials, including fillers may optionally be present in compositions of the instant invention.
The insulating dielectric material is generally selected from the group consisting of epoxy resins, polyamides, polyimides, tetrafluoroethylene (Teflon®), and liquid crystal materials. Other materials would also be known to those skilled in the art.
The fibrous reinforcing material is generally selected from the group consisting of glass fibers, carbon fibers, paper, and aromatic polyamide fibers, (i.e., Kevlar®). Other materials would also be known to those skilled in the art. The fibrous reinforcing material is generally present in the composition at a concentration of about 25 to about 75 percent by volume, preferably about 40 to about 50 percent by volume.
The conducting material in the composition generally comprises carbon (graphite) nanotubes. The carbon nanotubes are generally present in the composition at a concentration of about 40 to about 95 percent by volume, preferably about 70 to about 80 percent by volume.
In an alternative embodiment, the carbon nanotubes can also function as the fibrous reinforcing material due to their physical strength. In this instance, the carbon nanotubes are preferably present in the composition at a concentration of about 80 to about 99 percent by volume.
Various other components can also be utilized in compositions of the instant invention to achieve the desired result. Flow agents, such as surfactants and silanes can be included in compositions of the invention. Fillers, such as barium sulfate, can also be added.
The composite substrate material is selectively exposed to electromagnetic radiation in a negative pattern to that of an intended electronic interconnect circuit.
Selective exposure of the composite substrate is accomplished by use of a laser or focused electron beam as the source of electromagnetic radiation or by exposing the composite substrate material though a phototool or photomask. Upon exposure to electromagnetic radiation (i.e., light), the physical properties of the affected carbon nanotubes change and become non-conducting, thereby forming alternating areas of conducting and insulating substrate. The substrate can then be used as a circuit path, or as one layer comprising an electronic interconnection substrate. The electromagnetic radiation is applied in such a manner as to cause partial or full destruction of the tubular nanotube structure, resulting in a loss of bulk conductivity.
The composite substrate material may comprise one of a series of circuit layers that may subsequently be joined using traditional innerlayer connectivity methods, including lamination, via formation, and plated through hole formation. Other methods would also be known to one skilled in the art.

Claims

What is claimed is:
1. A composite substrate material comprising an insulating dielectric material, a fibrous reinforcing material, and a conducting material, wherein said conducting material comprises carbon nanotubes.
2. A composition substrate material according to claim 1, wherein the insulating dielectric material isi selected from the group consisting of epoxy resins, polyimides, tetrafluoroethylene, and liquid crystal materials.
3. A composite substrate material according to claim 1, wherein the fibrous reinforcing material is selected from the group consisting of glass fibers, carbon fibers, paper, and aromatic polyamide fibers.
4. A composite substrate material according to claim 1, wherein said carbon nanotubes have a diameter of less than 100 nanometers.
5. A composite substrate material according to claim 4, wherein said carbon nanotubes have a diameter of less than 10 nanometers.
6. A composite substrate material according to claim 1, wherein said carbon nanotubes consist of single-walled carbon nanotubes.
7. A composite substrate material according to claim 1, wherein said carbon nanotubes are present in said composite substrate material in an amount of about 25 to about 75 percent by volume.
8. A composite substrate material according to claim 7, wherein said carbon nanotubes are present in said composite substrate material in an amount of about 40 to about 50 percent by volume.
9. A composite substrate material according to claim 1, wherein at least some of said carbon nanotubes in said composite substrate material are selectively rendered non-conductive.
10. A composite substrate material according to claim 9, wherein at least some of said carbon nanotubes are selectively rendered non-conductive by use of a laser or a photomask.
11. A composite substrate according to claim 1, wherein both the fibrous reinforcing material and the conducting material comprise carbon nanotubes.
12. A composite substrate material according to claim 11, wherein said carbon nanotubes are present in said composite substrate material in an amount of about 80 to about 99 percent by volume.
13. A composite substrate material according to claim 9, wherein a distance between conducting and non-conducting areas of the composite substrate material is limited only by resolution of a source of electromagnetic radiation. (
14. A method of fabricating an electronic interconnect device comprising the steps of: a) mixing together an insulating dielectric material, a fibrous reinforcing material, and a conducting material, wherein said conducting material comprises carbon nanotubes, to form a composite substrate material; b) selectively exposing said conducting material in said composite substrate material to electromagnetic radiation to render portions of the carbon nanotubes non-conducting.
15. A method according to claim 14, wherein said insulating dielectric material is selected from the group consisting of epoxy resins, polyimides, tetrafluoroethylene, and liquid crystal materials.
16. A method according to claim 14, wherein said fibrous reinforcing material is selected from the group consisting of glass fibers, carbon fibers, paper, and aromatic polyamide fibers.
17. A method according to claim 14, wherein said carbon nanotubes have a diameter of less than 100 nanometers.
18. A method according to claim 17, wherein said carbon nanotubes have a diameter of less than 10 nanometers.
19. A method according to claim 14, wherein said carbon nanotubes consist of single-walled carbon nanotubes.
20. A method to claim 14, wherein said carbon nanotubes are present in said composite substrate material in an amount of about 25 to about 75 percent by volume.
21. A method according to claim 20, wherein said carbon nanotubes are present in said composite substrate material in an amount of about 40 to about 50 percent by volume.
22. A method according to claim 14, wherein said carbon nanotubes are selectively rendered non-conductive by use of a laser or a photomask.
23.- A method according to claim 14, wherein both the fibrous reinforcing material and the conducting material comprise carbon nanotubes.
24. A method according to claim 23, wherein said carbon nanotubes are present in said composite substrate material in an amount of about 80 to about 99 percent by volume.
25. A method according to claim 22, wherein a distance between conducting and non-conducting areas of the composite substrate material is limited only by resolution of a source of electromagnetic radiation.
PCT/US2004/004748 2003-02-24 2004-02-17 Electronic interconnect devices WO2005084183A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04821363A EP1634342B1 (en) 2003-02-24 2004-02-17 Method of fabricating electronic interconnect devices using direct imaging of dielectric material
JP2006517073A JP4374019B2 (en) 2003-02-24 2004-02-17 Fabrication of electronic connection devices using direct imaging of dielectric composites.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/372,747 US6762073B1 (en) 2003-02-24 2003-02-24 Method of fabricating electronic interconnect devices using direct imaging of dielectric composite material
US10/372,747 2003-02-24

Publications (2)

Publication Number Publication Date
WO2005084183A2 true WO2005084183A2 (en) 2005-09-15
WO2005084183A3 WO2005084183A3 (en) 2005-11-24

Family

ID=32681771

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/004748 WO2005084183A2 (en) 2003-02-24 2004-02-17 Electronic interconnect devices

Country Status (7)

Country Link
US (1) US6762073B1 (en)
EP (1) EP1634342B1 (en)
JP (1) JP4374019B2 (en)
CN (1) CN100487940C (en)
ES (1) ES2367024T3 (en)
TW (1) TWI238682B (en)
WO (1) WO2005084183A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2743291A1 (en) * 2012-12-14 2014-06-18 Plastic Components and Modules Automotive S.p.A. Method for the production of a component or a structural part on-board a vehicle adapted to integrate electrical devices and connections, and composite material for the realization of said component or structural part

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4943703B2 (en) * 2005-12-26 2012-05-30 日本電信電話株式会社 Tunnel junction forming method and tunnel junction forming apparatus
EP2448383B1 (en) * 2010-10-26 2013-09-11 C.R.F. Società Consortile Per Azioni Process for producing conductive and/or piezoresistive traces on a polymeric substrate

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW210422B (en) 1991-06-04 1993-08-01 Akzo Nv
US5576162A (en) 1996-01-18 1996-11-19 Eastman Kodak Company Imaging element having an electrically-conductive layer
RU98120524A (en) 1996-05-15 2000-10-10 Хайперион Каталайзис Интернэшнл GRAPHITE NANOFIBERS IN ELECTROCHEMICAL CAPACITORS
US6057637A (en) * 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
US6683783B1 (en) 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
EP1361592B1 (en) * 1997-09-30 2006-05-24 Noritake Co., Ltd. Method of manufacturing an electron-emitting source
DE69908016T2 (en) * 1998-04-09 2004-08-19 Enterprise Ireland Composition containing nanotubes and an organic compound
US6472705B1 (en) 1998-11-18 2002-10-29 International Business Machines Corporation Molecular memory & logic
US6420092B1 (en) 1999-07-14 2002-07-16 Cheng-Jer Yang Low dielectric constant nanotube
US6297063B1 (en) 1999-10-25 2001-10-02 Agere Systems Guardian Corp. In-situ nano-interconnected circuit devices and method for making the same
KR20010055501A (en) * 1999-12-10 2001-07-04 김순택 Method for forming cathode of field emission display
US6599961B1 (en) * 2000-02-01 2003-07-29 University Of Kentucky Research Foundation Polymethylmethacrylate augmented with carbon nanotubes
US7335603B2 (en) 2000-02-07 2008-02-26 Vladimir Mancevski System and method for fabricating logic devices comprising carbon nanotube transistors
US6669256B2 (en) * 2000-03-08 2003-12-30 Yoshikazu Nakayama Nanotweezers and nanomanipulator
US6423583B1 (en) 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
JP2002225167A (en) * 2001-02-01 2002-08-14 Mitsumi Electric Co Ltd Glass-epoxy substrate and magnetic head device
WO2002072333A1 (en) 2001-03-12 2002-09-19 Easter Mark R Methods of making compositions comprising thermoplastic and curable polymers and articles made from such methods
JP2004529840A (en) * 2001-03-26 2004-09-30 エイコス・インコーポレーテッド Carbon nanotubes in structures and repair compositions
US6689835B2 (en) * 2001-04-27 2004-02-10 General Electric Company Conductive plastic compositions and method of manufacture thereof
CA2450014A1 (en) * 2001-06-08 2002-12-19 Eikos, Inc. Nanocomposite dielectrics

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of EP1634342A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2743291A1 (en) * 2012-12-14 2014-06-18 Plastic Components and Modules Automotive S.p.A. Method for the production of a component or a structural part on-board a vehicle adapted to integrate electrical devices and connections, and composite material for the realization of said component or structural part

Also Published As

Publication number Publication date
WO2005084183A3 (en) 2005-11-24
EP1634342B1 (en) 2011-06-15
TWI238682B (en) 2005-08-21
US6762073B1 (en) 2004-07-13
CN100487940C (en) 2009-05-13
CN1860625A (en) 2006-11-08
EP1634342A2 (en) 2006-03-15
JP2007524560A (en) 2007-08-30
JP4374019B2 (en) 2009-12-02
EP1634342A4 (en) 2008-03-05
ES2367024T3 (en) 2011-10-27
TW200428916A (en) 2004-12-16

Similar Documents

Publication Publication Date Title
JP3823784B2 (en) Nanowire and manufacturing method thereof, and nanonetwork using the same, manufacturing method of nanonetwork, carbon structure, and electronic device
Shoukat et al. Carbon nanotubes: a review on properties, synthesis methods and applications in micro and nanotechnology
CN100393427C (en) Method for assembling nano objects
KR100779642B1 (en) Process for producing carbon nanotube device
Krishnan et al. Energetic graphene oxide: Challenges and opportunities
CN1898804B (en) Rectifying device and electronic circuit employing same, and process for producing rectifying device
JP2002264097A (en) Carbon nanotube structure body and its manufacturing method
JP5245110B2 (en) Electrode, transparent conductive film, and manufacturing method thereof
EP1650808A1 (en) Electronic element, integrated circuit and process for fabricating the same
JP2005041835A (en) Carbon nanotube structure, method for producing the same, carbon nanotube transfer and solution
JP2002346996A (en) Method of manufacturing carbon nanotube structure as well as carbon nanotube structure and carbon nanotube device using the same
JP4419507B2 (en) Capacitor manufacturing method
Vázquez et al. Microwave-assisted purification of HIPCO carbon nanotubes
JP2004142097A (en) Carbon nanotube pattern forming method and carbon nanotube layer formation method by utilizing chemical self-organizing method
JP2009193964A (en) Methods for preparing cnt film, cnt film with sandwich structure, anode including cnt film and organic light-emitting diode including anode and cnt device
JP3843736B2 (en) Carbon nanotube device, method for producing the same, and method for purifying carbon nanotube
JP2005277096A (en) Semiconductor interconnection constituted by use of metal film containing carbon nanotube and its manufacturing method, and method of manufacturing metal film containing carbon nanotube
US6762073B1 (en) Method of fabricating electronic interconnect devices using direct imaging of dielectric composite material
JP2000207953A (en) Nanocable and its manufacture
Wei et al. Carbon nanotube–magnesium oxide cube networks
Soma et al. Carbon nanotubes: Their role in engineering applications and challenges ahead
Noh et al. Novel hybridization approaches for graphene-based nanocomposites
JP4442335B2 (en) Decoupling element, manufacturing method thereof, and printed circuit board using the same
Subramanian et al. Meshes and Networks of Multiwalled Carbon Nanotubes
Martinez Functional Nanocomposites of Spinnable Carbon Nanotubes Synthesis, Processing and Applications

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2004821363

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2006517073

Country of ref document: JP

AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

WWE Wipo information: entry into national phase

Ref document number: 20048077760

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWP Wipo information: published in national office

Ref document number: 2004821363

Country of ref document: EP

DPEN Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101)