WO2005083797A1 - Multi-state memory cell with asymmetric charge trapping - Google Patents
Multi-state memory cell with asymmetric charge trapping Download PDFInfo
- Publication number
- WO2005083797A1 WO2005083797A1 PCT/US2005/004765 US2005004765W WO2005083797A1 WO 2005083797 A1 WO2005083797 A1 WO 2005083797A1 US 2005004765 W US2005004765 W US 2005004765W WO 2005083797 A1 WO2005083797 A1 WO 2005083797A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- control gate
- trapping layer
- drain
- source
- trapping
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000002347 injection Methods 0.000 claims abstract description 11
- 239000007924 injection Substances 0.000 claims abstract description 11
- 150000004767 nitrides Chemical class 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002159 nanocrystal Substances 0.000 claims description 2
- 238000007667 floating Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7887—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007500871A JP4866835B2 (en) | 2004-02-24 | 2005-02-15 | Multi-level memory cell that traps charge asymmetrically |
EP05713587A EP1719185A1 (en) | 2004-02-24 | 2005-02-15 | Multi-state memory cell with asymmetric charge trapping |
CN2005800056006A CN1922737B (en) | 2004-02-24 | 2005-02-15 | Multi-state memory cell with asymmetric charge trapping |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/785,785 US7072217B2 (en) | 2004-02-24 | 2004-02-24 | Multi-state memory cell with asymmetric charge trapping |
US10/785,785 | 2004-02-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005083797A1 true WO2005083797A1 (en) | 2005-09-09 |
Family
ID=34861685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/004765 WO2005083797A1 (en) | 2004-02-24 | 2005-02-15 | Multi-state memory cell with asymmetric charge trapping |
Country Status (7)
Country | Link |
---|---|
US (4) | US7072217B2 (en) |
EP (2) | EP1719185A1 (en) |
JP (2) | JP4866835B2 (en) |
KR (1) | KR100852849B1 (en) |
CN (1) | CN1922737B (en) |
TW (1) | TWI267990B (en) |
WO (1) | WO2005083797A1 (en) |
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TW200532925A (en) | 2005-10-01 |
CN1922737B (en) | 2010-05-05 |
US20060203554A1 (en) | 2006-09-14 |
US20100039869A1 (en) | 2010-02-18 |
JP2011066436A (en) | 2011-03-31 |
JP2007523501A (en) | 2007-08-16 |
US20050185466A1 (en) | 2005-08-25 |
TWI267990B (en) | 2006-12-01 |
CN1922737A (en) | 2007-02-28 |
KR100852849B1 (en) | 2008-08-18 |
KR20060118596A (en) | 2006-11-23 |
US7072217B2 (en) | 2006-07-04 |
US7616482B2 (en) | 2009-11-10 |
US7577027B2 (en) | 2009-08-18 |
US7911837B2 (en) | 2011-03-22 |
EP1719185A1 (en) | 2006-11-08 |
EP2416367A2 (en) | 2012-02-08 |
US20060203555A1 (en) | 2006-09-14 |
JP4866835B2 (en) | 2012-02-01 |
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