WO2005083762A1 - Gate electrode dopant activation method for semiconductor manufacturing - Google Patents
Gate electrode dopant activation method for semiconductor manufacturing Download PDFInfo
- Publication number
- WO2005083762A1 WO2005083762A1 PCT/US2005/004318 US2005004318W WO2005083762A1 WO 2005083762 A1 WO2005083762 A1 WO 2005083762A1 US 2005004318 W US2005004318 W US 2005004318W WO 2005083762 A1 WO2005083762 A1 WO 2005083762A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polycrystalline layer
- layer
- dopant
- doped
- range
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05722937A EP1719158A1 (en) | 2004-02-23 | 2005-02-10 | Gate electrode dopant activation method for semiconductor manufacturing |
JP2006554137A JP5028093B2 (en) | 2004-02-23 | 2005-02-10 | Method for activating gate electrode dopant for semiconductor manufacturing |
KR1020067019046A KR101118330B1 (en) | 2004-02-23 | 2005-02-10 | Gate electrode dopant activation method for semiconductor manufacturing |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/784,904 | 2004-02-23 | ||
US10/784,904 US7078302B2 (en) | 2004-02-23 | 2004-02-23 | Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005083762A1 true WO2005083762A1 (en) | 2005-09-09 |
Family
ID=34861538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/004318 WO2005083762A1 (en) | 2004-02-23 | 2005-02-10 | Gate electrode dopant activation method for semiconductor manufacturing |
Country Status (6)
Country | Link |
---|---|
US (2) | US7078302B2 (en) |
EP (1) | EP1719158A1 (en) |
JP (1) | JP5028093B2 (en) |
KR (1) | KR101118330B1 (en) |
CN (1) | CN100524630C (en) |
WO (1) | WO2005083762A1 (en) |
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-
2004
- 2004-02-23 US US10/784,904 patent/US7078302B2/en active Active
-
2005
- 2005-02-10 KR KR1020067019046A patent/KR101118330B1/en not_active IP Right Cessation
- 2005-02-10 EP EP05722937A patent/EP1719158A1/en not_active Withdrawn
- 2005-02-10 CN CNB2005800051040A patent/CN100524630C/en not_active Expired - Fee Related
- 2005-02-10 WO PCT/US2005/004318 patent/WO2005083762A1/en active Application Filing
- 2005-02-10 JP JP2006554137A patent/JP5028093B2/en not_active Expired - Fee Related
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2006
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KR20070020426A (en) | 2007-02-21 |
US20060286763A1 (en) | 2006-12-21 |
US7078302B2 (en) | 2006-07-18 |
KR101118330B1 (en) | 2012-03-12 |
CN100524630C (en) | 2009-08-05 |
US20050186765A1 (en) | 2005-08-25 |
JP5028093B2 (en) | 2012-09-19 |
EP1719158A1 (en) | 2006-11-08 |
US7611976B2 (en) | 2009-11-03 |
CN1922717A (en) | 2007-02-28 |
JP2007523491A (en) | 2007-08-16 |
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