WO2005069372A8 - Carbon nanotube conductor for trench capacitors - Google Patents

Carbon nanotube conductor for trench capacitors

Info

Publication number
WO2005069372A8
WO2005069372A8 PCT/US2003/040295 US0340295W WO2005069372A8 WO 2005069372 A8 WO2005069372 A8 WO 2005069372A8 US 0340295 W US0340295 W US 0340295W WO 2005069372 A8 WO2005069372 A8 WO 2005069372A8
Authority
WO
WIPO (PCT)
Prior art keywords
trench
carbon nanotube
carbon nanotubes
conductor
substrate
Prior art date
Application number
PCT/US2003/040295
Other languages
French (fr)
Other versions
WO2005069372A1 (en
Inventor
Toshiharu Furukawa
Mark C Hakey
Steven J Holmes
David V Horak
Charles W Koburger Iii
Larry A Nesbit
Original Assignee
Ibm
Toshiharu Furukawa
Mark C Hakey
Steven J Holmes
David V Horak
Charles W Koburger Iii
Larry A Nesbit
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Toshiharu Furukawa, Mark C Hakey, Steven J Holmes, David V Horak, Charles W Koburger Iii, Larry A Nesbit filed Critical Ibm
Priority to US10/596,022 priority Critical patent/US7932549B2/en
Priority to AU2003301031A priority patent/AU2003301031A1/en
Priority to PCT/US2003/040295 priority patent/WO2005069372A1/en
Publication of WO2005069372A1 publication Critical patent/WO2005069372A1/en
Publication of WO2005069372A8 publication Critical patent/WO2005069372A8/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/948—Energy storage/generating using nanostructure, e.g. fuel cell, battery

Abstract

A trench-type storage device includes a trench in a substrate (100), with bundles of carbon nanotubes (202) lining the trench and a trench conductor (300) filling the trench. A trench dielectric (200) may be formed between the carbon nanotubes and the sidewall of the trench. The bundles of carbon nanotubes form an open cylinder structure lining the trench. The device is formed by providing a carbon nanotube catalyst structure on the substrate and patterning the trench in the substrate; the carbon nanotubes are then grown down into the trench to line the trench with the carbon nanotube bundles, after which the trench is filled with the trench conductor.
PCT/US2003/040295 2003-12-18 2003-12-18 Carbon nanotube conductor for trench capacitors WO2005069372A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/596,022 US7932549B2 (en) 2003-12-18 2003-12-18 Carbon nanotube conductor for trench capacitors
AU2003301031A AU2003301031A1 (en) 2003-12-18 2003-12-18 Carbon nanotube conductor for trench capacitors
PCT/US2003/040295 WO2005069372A1 (en) 2003-12-18 2003-12-18 Carbon nanotube conductor for trench capacitors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2003/040295 WO2005069372A1 (en) 2003-12-18 2003-12-18 Carbon nanotube conductor for trench capacitors

Publications (2)

Publication Number Publication Date
WO2005069372A1 WO2005069372A1 (en) 2005-07-28
WO2005069372A8 true WO2005069372A8 (en) 2005-11-03

Family

ID=34793577

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/040295 WO2005069372A1 (en) 2003-12-18 2003-12-18 Carbon nanotube conductor for trench capacitors

Country Status (3)

Country Link
US (1) US7932549B2 (en)
AU (1) AU2003301031A1 (en)
WO (1) WO2005069372A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090057089A (en) 2006-09-04 2009-06-03 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Control of carbon nanostructure growth in an interconnect structure
US8912522B2 (en) * 2009-08-26 2014-12-16 University Of Maryland Nanodevice arrays for electrical energy storage, capture and management and method for their formation
US10032569B2 (en) * 2009-08-26 2018-07-24 University Of Maryland, College Park Nanodevice arrays for electrical energy storage, capture and management and method for their formation
US8436447B2 (en) * 2010-04-23 2013-05-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US9793039B1 (en) * 2011-05-04 2017-10-17 The Board Of Trustees Of The University Of Alabama Carbon nanotube-based integrated power inductor for on-chip switching power converters
US9324634B2 (en) 2011-11-08 2016-04-26 International Business Machines Corporation Semiconductor interconnect structure having a graphene-based barrier metal layer
US9685258B2 (en) 2012-11-09 2017-06-20 Northrop Grumman Systems Corporation Hybrid carbon nanotube shielding for lightweight electrical cables
US9590514B1 (en) 2013-03-15 2017-03-07 The Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama Carbon nanotube-based integrated power converters
US9406888B2 (en) 2013-08-07 2016-08-02 GlobalFoundries, Inc. Carbon nanotube device

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0740348B1 (en) * 1995-04-24 2002-02-27 Infineon Technologies AG Semiconductor memory structure, using a ferroelectric dielectric and method of formation
US6286226B1 (en) * 1999-09-24 2001-09-11 Agere Systems Guardian Corp. Tactile sensor comprising nanowires and method for making the same
US6340822B1 (en) 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6333598B1 (en) * 2000-01-07 2001-12-25 The United States Of America As Represented By The Secretary Of The Navy Low gate current field emitter cell and array with vertical thin-film-edge emitter
US6384468B1 (en) * 2000-02-07 2002-05-07 International Business Machines Corporation Capacitor and method for forming same
DE10006964C2 (en) 2000-02-16 2002-01-31 Infineon Technologies Ag Electronic component with a conductive connection between two conductive layers and method for producing an electronic component
KR100487069B1 (en) * 2000-04-12 2005-05-03 일진나노텍 주식회사 Supercapacitor using electrode of new material and manufacturing method the same
KR100360476B1 (en) * 2000-06-27 2002-11-08 삼성전자 주식회사 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
DE10036897C1 (en) * 2000-07-28 2002-01-03 Infineon Technologies Ag Field effect transistor used in a switching arrangement comprises a gate region between a source region and a drain region
US7078308B2 (en) * 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7090819B2 (en) * 2001-02-12 2006-08-15 William Marsh Rice University Gas-phase process for purifying single-wall carbon nanotubes and compositions thereof
US6720719B2 (en) * 2001-03-06 2004-04-13 Thomson Licensing S. A. Resistive coating for a tensioned focus mask CRT
JP4697829B2 (en) * 2001-03-15 2011-06-08 ポリマテック株式会社 Carbon nanotube composite molded body and method for producing the same
US6576525B2 (en) * 2001-03-19 2003-06-10 International Business Machines Corporation Damascene capacitor having a recessed plate
US6737939B2 (en) * 2001-03-30 2004-05-18 California Institute Of Technology Carbon nanotube array RF filter
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
US6599808B2 (en) 2001-09-12 2003-07-29 Intel Corporation Method and device for on-chip decoupling capacitor using nanostructures as bottom electrode
TW506083B (en) 2001-11-28 2002-10-11 Ind Tech Res Inst Method of using nano-tube to increase semiconductor device capacitance
JP2005517537A (en) 2002-02-11 2005-06-16 レンセラー・ポリテクニック・インスティチュート Highly organized directional assembly of carbon nanotube structure
US6515325B1 (en) * 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same
US20030211724A1 (en) * 2002-05-10 2003-11-13 Texas Instruments Incorporated Providing electrical conductivity between an active region and a conductive layer in a semiconductor device using carbon nanotubes
US6548313B1 (en) * 2002-05-31 2003-04-15 Intel Corporation Amorphous carbon insulation and carbon nanotube wires
AU2003282558A1 (en) * 2002-10-11 2004-05-04 Massachusetts Institute Of Technology Nanopellets and method of making nanopellets
US7105851B2 (en) * 2003-09-24 2006-09-12 Intel Corporation Nanotubes for integrated circuits

Also Published As

Publication number Publication date
AU2003301031A1 (en) 2005-08-03
US7932549B2 (en) 2011-04-26
US20090014767A1 (en) 2009-01-15
WO2005069372A1 (en) 2005-07-28

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