WO2005068395A3 - High purity silicon carbide articles and methods - Google Patents

High purity silicon carbide articles and methods Download PDF

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Publication number
WO2005068395A3
WO2005068395A3 PCT/US2005/000183 US2005000183W WO2005068395A3 WO 2005068395 A3 WO2005068395 A3 WO 2005068395A3 US 2005000183 W US2005000183 W US 2005000183W WO 2005068395 A3 WO2005068395 A3 WO 2005068395A3
Authority
WO
WIPO (PCT)
Prior art keywords
high purity
methods
silicon carbide
active impurity
purity silicon
Prior art date
Application number
PCT/US2005/000183
Other languages
French (fr)
Other versions
WO2005068395A2 (en
Inventor
Yeshwanth Narendar
Richard F Buckley
Original Assignee
Saint Gobain Ceramics
Yeshwanth Narendar
Richard F Buckley
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics, Yeshwanth Narendar, Richard F Buckley filed Critical Saint Gobain Ceramics
Publication of WO2005068395A2 publication Critical patent/WO2005068395A2/en
Publication of WO2005068395A3 publication Critical patent/WO2005068395A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • C04B38/0051—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof characterised by the pore size, pore shape or kind of porosity
    • C04B38/0054—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof characterised by the pore size, pore shape or kind of porosity the pores being microsized or nanosized
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5035—Silica
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S206/00—Special receptacle or package
    • Y10S206/832—Semiconductor wafer boat

Abstract

A high purity ceramic article having a typical pore size of at least about 15 µm and an active impurity concentration of less than about 400 ppm can be prepared by molding ceramic powder, sintering to vaporize any active impurity components, washing to dissolve any remaining active impurity components with an acid solution, and oxidizing to remove any residual active impurity components.
PCT/US2005/000183 2004-01-06 2005-01-05 High purity silicon carbide articles and methods WO2005068395A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/752,434 2004-01-06
US10/752,434 US7501370B2 (en) 2004-01-06 2004-01-06 High purity silicon carbide wafer boats

Publications (2)

Publication Number Publication Date
WO2005068395A2 WO2005068395A2 (en) 2005-07-28
WO2005068395A3 true WO2005068395A3 (en) 2005-10-06

Family

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Family Applications (1)

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PCT/US2005/000183 WO2005068395A2 (en) 2004-01-06 2005-01-05 High purity silicon carbide articles and methods

Country Status (3)

Country Link
US (1) US7501370B2 (en)
TW (1) TWI295668B (en)
WO (1) WO2005068395A2 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825123B2 (en) * 2003-04-15 2004-11-30 Saint-Goban Ceramics & Plastics, Inc. Method for treating semiconductor processing components and components formed thereby
US7888685B2 (en) * 2004-07-27 2011-02-15 Memc Electronic Materials, Inc. High purity silicon carbide structures
KR100953707B1 (en) * 2004-08-24 2010-04-19 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 Semiconductor processing components and semiconductor processing utilizing same
CN101253614B (en) * 2005-07-08 2011-02-02 埃塞斯特科技有限公司 Workpiece support structures and apparatus for accessing same
JP5050363B2 (en) * 2005-08-12 2012-10-17 株式会社Ｓｕｍｃｏ Heat treatment jig for semiconductor silicon substrate and manufacturing method thereof
WO2007066384A1 (en) * 2005-12-06 2007-06-14 Fujitsu Limited Semiconductor wafer storage case and method of storing wafers
US7727919B2 (en) * 2007-10-29 2010-06-01 Saint-Gobain Ceramics & Plastics, Inc. High resistivity silicon carbide
CN101884099B (en) * 2007-12-20 2012-07-25 圣戈本陶瓷及塑料股份有限公司 Method for treating semiconductor processing components and components formed thereby
KR20100105892A (en) * 2008-02-21 2010-09-30 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 Ceramic paddle
US20110062053A1 (en) * 2009-07-13 2011-03-17 Greene Tweed Of Delaware, Inc. Chimerized Wafer Boat for Use in Semiconductor Chip Processing and Related Methods
CN102639724B (en) * 2009-09-02 2013-11-06 本田技研工业株式会社 Conveyance rack, method for retaining metal ring
US8865607B2 (en) 2010-11-22 2014-10-21 Saint-Gobain Ceramics & Plastics, Inc. Infiltrated silicon carbide bodies and methods of making
JP5890232B2 (en) * 2012-04-06 2016-03-22 株式会社ブリヂストン Method for manufacturing silicon carbide member
WO2016038664A1 (en) * 2014-09-08 2016-03-17 三菱電機株式会社 Semiconductor annealing apparatus
NL2022185B1 (en) * 2018-12-12 2020-07-02 Suss Microtec Lithography Gmbh Substrate cassette
JP7145773B2 (en) * 2019-01-29 2022-10-03 株式会社フジミインコーポレーテッド coated particles
KR102552458B1 (en) * 2019-07-31 2023-07-06 가부시키가이샤 코쿠사이 엘렉트릭 Substrate processing apparatus, substrate support, and method of manufacturing semiconductor device
CN111892419A (en) * 2020-08-03 2020-11-06 福赛特(唐山)新材料有限公司 High-shock-resistance silicon carbide boat and preparation method thereof
CN112021897A (en) * 2020-09-10 2020-12-04 浙江先导热电科技股份有限公司 High-efficient constant temperature cup device
US20220148899A1 (en) * 2020-11-06 2022-05-12 Changxin Memory Technologies, Inc. Wafer boat structure, as well as wafer boat assembly and diffusion furnace with same
CN116013822B (en) * 2023-01-09 2023-11-03 南通三责精密陶瓷有限公司 Purification method of high-purity silicon carbide wafer boat, high-purity silicon dioxide coated silicon carbide wafer boat and production process thereof
CN116516468B (en) * 2023-07-04 2023-10-13 苏州优晶光电科技有限公司 Device and method for simultaneously treating multiple silicon carbide seed crystal coatings

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834387A (en) * 1992-07-08 1998-11-10 The Carborundum Company Ceramic comprising silicon carbide with controlled porosity
EP1184355A1 (en) * 2000-02-15 2002-03-06 Toshiba Ceramics Co., Ltd. METHOD FOR MANUFACTURING Si-SiC MEMBER FOR SEMICONDUCTOR HEAT TREATMENT
JP2002338366A (en) * 2001-05-21 2002-11-27 Tokai Konetsu Kogyo Co Ltd High purity silicon carbide heating element and method of producing the same
CA2466183A1 (en) * 2001-11-08 2003-05-15 Bridgestone Corporation Method of producing sintered silicon carbide jig used for producing semiconductor and sintered silicon carbide jig obtained by the same production method

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1900053A (en) 1928-11-22 1933-03-07 United Shoe Machinery Corp Rack
US2233434A (en) 1937-12-06 1941-03-04 William F Smith Ceramic support
GB893041A (en) 1958-04-03 1962-04-04 Wacker Chemie Gmbh Process for the manufacture of shaped bodies of silicon carbide
US3219182A (en) 1963-06-17 1965-11-23 Jackes Evans Mfg Company Stacking clip
GB1394106A (en) 1972-08-12 1975-05-14 Tarabanov A S Method of preparing an antifriction material
US3951587A (en) 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
SE8004352L (en) 1979-06-14 1980-12-15 Atomic Energy Authority Uk TRANSMISSION ELEMENT AND SYSTEM
US4900531A (en) 1982-06-22 1990-02-13 Harry Levin Converting a carbon preform object to a silicon carbide object
DE3338755A1 (en) 1982-10-28 1984-05-03 Toshiba Ceramics Co., Ltd., Tokio/Topkyo SHAPED BODY BASED ON SILICON CARBIDE FOR USE IN SEMICONDUCTOR PRODUCTION
JPS60246264A (en) 1984-05-23 1985-12-05 東芝セラミツクス株式会社 Manufacture of silicon carbide material
JPS6212666A (en) 1985-07-09 1987-01-21 東芝セラミツクス株式会社 Manufacture of oven core pipe for semiconductor
US5021367A (en) 1987-06-25 1991-06-04 General Electric Company Fiber-containing composite
US4944904A (en) 1987-06-25 1990-07-31 General Electric Company Method of obtaining a fiber-containing composite
US5043303A (en) 1987-09-28 1991-08-27 General Electric Company Filament-containing composite
US4978567A (en) * 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
US4998879A (en) 1988-04-29 1991-03-12 Norton Company High purity diffusion furnace components
US4981822A (en) 1989-02-17 1991-01-01 General Electric Company Composite containing coated fibrous material
US4889686A (en) 1989-02-17 1989-12-26 General Electric Company Composite containing coated fibrous material
FR2643898B1 (en) 1989-03-02 1993-05-07 Europ Propulsion PROCESS FOR THE MANUFACTURE OF A COMPOSITE MATERIAL WITH A CERAMIC MATRIX WITH IMPROVED TENACITY
FR2668480B1 (en) 1990-10-26 1993-10-08 Propulsion Ste Europeenne PROCESS FOR THE ANTI-OXIDATION PROTECTION OF A COMPOSITE MATERIAL CONTAINING CARBON, AND MATERIAL THUS PROTECTED.
US5589116A (en) * 1991-07-18 1996-12-31 Sumitomo Metal Industries, Ltd. Process for preparing a silicon carbide sintered body for use in semiconductor equipment
US5238619A (en) 1992-03-30 1993-08-24 General Electric Company Method of forming a porous carbonaceous preform from a water-based slurry
CA2099788A1 (en) * 1992-07-31 1994-02-01 Michael A. Pickering Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom
JP3250628B2 (en) 1992-12-17 2002-01-28 東芝セラミックス株式会社 Vertical semiconductor heat treatment jig
US5417803A (en) 1993-09-29 1995-05-23 Intel Corporation Method for making Si/SiC composite material
US5846611A (en) 1993-10-27 1998-12-08 Societe Europeene De Propulsion Chemical vapor infiltration process of a material within a fibrous substrate with creation of a temperature gradient in the latter
FR2714076B1 (en) 1993-12-16 1996-03-15 Europ Propulsion Method for densifying porous substrates by chemical vapor infiltration of silicon carbide.
US5509555A (en) 1994-06-03 1996-04-23 Massachusetts Institute Of Technology Method for producing an article by pressureless reactive infiltration
JPH07328360A (en) * 1994-06-08 1995-12-19 Tokai Konetsu Kogyo Co Ltd Porous silicon carbide heater
US5538230A (en) 1994-08-08 1996-07-23 Sibley; Thomas Silicon carbide carrier for wafer processing
US5514439A (en) * 1994-10-14 1996-05-07 Sibley; Thomas Wafer support fixtures for rapid thermal processing
US5628938A (en) 1994-11-18 1997-05-13 General Electric Company Method of making a ceramic composite by infiltration of a ceramic preform
JP3218164B2 (en) 1995-05-31 2001-10-15 東京エレクトロン株式会社 Support boat for object to be processed, heat treatment apparatus and heat treatment method
JP3122364B2 (en) 1996-02-06 2001-01-09 東京エレクトロン株式会社 Wafer boat
EP0884769A1 (en) 1996-02-29 1998-12-16 Tokyo Electron Limited Heat-treating boat for semiconductor wafer
US5904892A (en) * 1996-04-01 1999-05-18 Saint-Gobain/Norton Industrial Ceramics Corp. Tape cast silicon carbide dummy wafer
US6776289B1 (en) 1996-07-12 2004-08-17 Entegris, Inc. Wafer container with minimal contact
DE69722873T2 (en) * 1996-08-27 2004-05-19 Asahi Glass Co., Ltd. High corrosion resistant silicon carbide product
US6024898A (en) 1996-12-30 2000-02-15 General Electric Company Article and method for making complex shaped preform and silicon carbide composite by melt infiltration
JPH10228974A (en) * 1997-02-14 1998-08-25 Tokai Konetsu Kogyo Co Ltd Silicon carbide heater for air heater
US5770324A (en) * 1997-03-03 1998-06-23 Saint-Gobain Industrial Ceramics, Inc. Method of using a hot pressed silicon carbide dummy wafer
JPH10253259A (en) * 1997-03-12 1998-09-25 Tokai Konetsu Kogyo Co Ltd Material of roller for roller hearth furnace and manufacture thereof
JP3494554B2 (en) 1997-06-26 2004-02-09 東芝セラミックス株式会社 Jig for semiconductor and manufacturing method thereof
US6379575B1 (en) 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
DE19749462C1 (en) 1997-11-10 1999-03-04 Deutsch Zentr Luft & Raumfahrt Moulded body reinforced with carbon fibres
JPH11209115A (en) 1998-01-23 1999-08-03 Toyo Tanso Kk High purity c/c composite and its production
JP2000044223A (en) 1998-07-28 2000-02-15 Toshiba Ceramics Co Ltd Production of silicon carbide
AU759804B2 (en) 1998-09-28 2003-05-01 Skeleton Technologies Ag Method of manufacturing a diamond composite and a composite produced by same
US6171400B1 (en) 1998-10-02 2001-01-09 Union Oil Company Of California Vertical semiconductor wafer carrier
FR2784695B1 (en) 1998-10-20 2001-11-02 Snecma DENSIFICATION OF POROUS STRUCTURES BY CHEMICAL STEAM INFILTRATION
TW460617B (en) 1998-11-06 2001-10-21 United Microelectronics Corp Method for removing carbon contamination on surface of semiconductor substrate
US6162543A (en) * 1998-12-11 2000-12-19 Saint-Gobain Industrial Ceramics, Inc. High purity siliconized silicon carbide having high thermal shock resistance
US6225594B1 (en) 1999-04-15 2001-05-01 Integrated Materials, Inc. Method and apparatus for securing components of wafer processing fixtures
FR2793311B1 (en) 1999-05-05 2001-07-27 Snecma DEVICE FOR LOADING WORKPIECES TO BE HEAT TREATED
US6383298B1 (en) 1999-06-04 2002-05-07 Goodrich Corporation Method and apparatus for pressure measurement in a CVI/CVD furnace
EP1061042A1 (en) 1999-06-15 2000-12-20 Iljin Nanotech Co., Ltd. Method for gas phase purification of carbon nanotubes by thermal treatment in diffusion furnace
US6099645A (en) 1999-07-09 2000-08-08 Union Oil Company Of California Vertical semiconductor wafer carrier with slats
US6395203B1 (en) 1999-08-30 2002-05-28 General Electric Company Process for producing low impurity level ceramic
US6296716B1 (en) 1999-10-01 2001-10-02 Saint-Gobain Ceramics And Plastics, Inc. Process for cleaning ceramic articles
US6277194B1 (en) 1999-10-21 2001-08-21 Applied Materials, Inc. Method for in-situ cleaning of surfaces in a substrate processing chamber
US6890861B1 (en) 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
JP3749518B2 (en) 2000-07-24 2006-03-01 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Method for cleaning ceramic articles
US20020130061A1 (en) 2000-11-02 2002-09-19 Hengst Richard R. Apparatus and method of making a slip free wafer boat
US6841273B2 (en) 2000-12-27 2005-01-11 Toshiba Ceramics Co., Ltd. Silicon/silicon carbide composite and process for manufacturing the same
JP2002226274A (en) * 2001-01-25 2002-08-14 Ngk Insulators Ltd Corrosion resistant ceramic material, method for manufacturing the same and product for manufacturing semiconductor
JP2002324830A (en) 2001-02-20 2002-11-08 Mitsubishi Electric Corp Holding tool for substrate heat treatment, substrate heat treating equipment method for manufacturing semiconductor device, method for manufacturing the holding tool for substrate heat treatment and method for deciding structure of the holding tool for substrate heat treatment
US20020170487A1 (en) 2001-05-18 2002-11-21 Raanan Zehavi Pre-coated silicon fixtures used in a high temperature process
US6488497B1 (en) 2001-07-12 2002-12-03 Saint-Gobain Ceramics & Plastics, Inc. Wafer boat with arcuate wafer support arms
US6536608B2 (en) 2001-07-12 2003-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single cast vertical wafer boat with a Y shaped column rack
US6811040B2 (en) 2001-07-16 2004-11-02 Rohm And Haas Company Wafer holding apparatus
JP3924714B2 (en) 2001-12-27 2007-06-06 東京エレクトロン株式会社 Wafer cassette
US20030198749A1 (en) 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834387A (en) * 1992-07-08 1998-11-10 The Carborundum Company Ceramic comprising silicon carbide with controlled porosity
EP1184355A1 (en) * 2000-02-15 2002-03-06 Toshiba Ceramics Co., Ltd. METHOD FOR MANUFACTURING Si-SiC MEMBER FOR SEMICONDUCTOR HEAT TREATMENT
JP2002338366A (en) * 2001-05-21 2002-11-27 Tokai Konetsu Kogyo Co Ltd High purity silicon carbide heating element and method of producing the same
CA2466183A1 (en) * 2001-11-08 2003-05-15 Bridgestone Corporation Method of producing sintered silicon carbide jig used for producing semiconductor and sintered silicon carbide jig obtained by the same production method

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US20050148455A1 (en) 2005-07-07
TW200535115A (en) 2005-11-01
WO2005068395A2 (en) 2005-07-28
TWI295668B (en) 2008-04-11
US7501370B2 (en) 2009-03-10

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