WO2005067634A3 - Advanced multi-pressure worpiece processing - Google Patents
Advanced multi-pressure worpiece processing Download PDFInfo
- Publication number
- WO2005067634A3 WO2005067634A3 PCT/US2005/000423 US2005000423W WO2005067634A3 WO 2005067634 A3 WO2005067634 A3 WO 2005067634A3 US 2005000423 W US2005000423 W US 2005000423W WO 2005067634 A3 WO2005067634 A3 WO 2005067634A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pressure
- preheating
- process chamber
- treatment
- worpiece
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112005000153T DE112005000153T5 (en) | 2004-01-06 | 2005-01-06 | Advanced multi-pressure workpiece processing |
JP2006549413A JP2007518278A (en) | 2004-01-06 | 2005-01-06 | Advanced multi-pressure workpiece machining |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53449504P | 2004-01-06 | 2004-01-06 | |
US60/534,495 | 2004-01-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005067634A2 WO2005067634A2 (en) | 2005-07-28 |
WO2005067634A3 true WO2005067634A3 (en) | 2005-09-15 |
Family
ID=34794284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/000423 WO2005067634A2 (en) | 2004-01-06 | 2005-01-06 | Advanced multi-pressure worpiece processing |
Country Status (7)
Country | Link |
---|---|
US (1) | US20050205210A1 (en) |
JP (1) | JP2007518278A (en) |
KR (1) | KR20060127019A (en) |
CN (1) | CN1910308A (en) |
DE (1) | DE112005000153T5 (en) |
TW (1) | TWI257647B (en) |
WO (1) | WO2005067634A2 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101460659B (en) * | 2006-06-02 | 2011-12-07 | 应用材料股份有限公司 | Gas flow control by differential pressure measurements |
CN104934353B (en) * | 2014-03-18 | 2018-01-19 | 北京北方华创微电子装备有限公司 | Transmission system, reaction chamber and semiconductor processing equipment |
US10428426B2 (en) * | 2016-04-22 | 2019-10-01 | Applied Materials, Inc. | Method and apparatus to prevent deposition rate/thickness drift, reduce particle defects and increase remote plasma system lifetime |
US11592394B2 (en) * | 2016-08-12 | 2023-02-28 | Wisconsin Alumni Research Foundation | Methods and systems for transmission and detection of free radicals |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
KR102405723B1 (en) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | High pressure and high temperature annealing chamber |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
SG11202003355QA (en) | 2017-11-11 | 2020-05-28 | Micromaterials Llc | Gas delivery system for high pressure processing chamber |
CN111432920A (en) | 2017-11-17 | 2020-07-17 | 应用材料公司 | Condenser system for high pressure processing system |
WO2019173006A1 (en) | 2018-03-09 | 2019-09-12 | Applied Materials, Inc. | High pressure annealing process for metal containing materials |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
CN113658891A (en) * | 2021-08-19 | 2021-11-16 | 上海稷以科技有限公司 | Wafer processing device |
WO2023043043A1 (en) * | 2021-09-17 | 2023-03-23 | 주식회사 플라즈맵 | Plasma processing apparatus |
KR102611478B1 (en) * | 2021-09-17 | 2023-12-08 | 주식회사 플라즈맵 | Apparatus for plasma treatment |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4824545A (en) * | 1987-09-18 | 1989-04-25 | Leybold Aktiengesellschaft | Apparatus for coating substrates |
US6106634A (en) * | 1999-02-11 | 2000-08-22 | Applied Materials, Inc. | Methods and apparatus for reducing particle contamination during wafer transport |
US20020006689A1 (en) * | 1995-12-14 | 2002-01-17 | Mitsutoshi Miyasaka | Thin film semiconductor device and method for producing the same |
US6409932B2 (en) * | 2000-04-03 | 2002-06-25 | Matrix Integrated Systems, Inc. | Method and apparatus for increased workpiece throughput |
US20030133773A1 (en) * | 2002-01-14 | 2003-07-17 | Applied Materials, Inc. | Semiconductor wafer preheating |
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US3125232A (en) * | 1964-03-17 | Transfer device | ||
JPS6362233A (en) * | 1986-09-03 | 1988-03-18 | Mitsubishi Electric Corp | Reactive ion etching apparatus |
US5868854A (en) * | 1989-02-27 | 1999-02-09 | Hitachi, Ltd. | Method and apparatus for processing samples |
JP3466607B2 (en) * | 1989-09-13 | 2003-11-17 | ソニー株式会社 | Sputtering equipment |
US5135391A (en) * | 1990-04-24 | 1992-08-04 | Micron Technology, Inc. | Semiconductor processing gas diffuser plate |
KR100238627B1 (en) * | 1993-01-12 | 2000-01-15 | 히가시 데쓰로 | Plasma processing apparatus |
DE4427984C2 (en) * | 1994-08-08 | 2003-07-03 | Unaxis Deutschland Holding | Device for feeding in and out of workpieces in a coating chamber |
US5830272A (en) * | 1995-11-07 | 1998-11-03 | Sputtered Films, Inc. | System for and method of providing a controlled deposition on wafers |
US5863170A (en) * | 1996-04-16 | 1999-01-26 | Gasonics International | Modular process system |
US5944940A (en) * | 1996-07-09 | 1999-08-31 | Gamma Precision Technology, Inc. | Wafer transfer system and method of using the same |
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US6228773B1 (en) * | 1998-04-14 | 2001-05-08 | Matrix Integrated Systems, Inc. | Synchronous multiplexed near zero overhead architecture for vacuum processes |
JP2000021871A (en) * | 1998-06-30 | 2000-01-21 | Tokyo Electron Ltd | Plasma treating method |
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DE19835154A1 (en) * | 1998-08-04 | 2000-02-10 | Leybold Systems Gmbh | Apparatus for vacuum coating of substrates, in particular, those with spherical surfaces comprises two vacuum chambers which are located adjacent to one another and have rotating transport arms |
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JP2002026108A (en) * | 2000-07-12 | 2002-01-25 | Tokyo Electron Ltd | Transfer mechanism for works, processing system and method of using transfer mechanism |
US6564811B2 (en) * | 2001-03-26 | 2003-05-20 | Intel Corporation | Method of reducing residue deposition onto ash chamber base surfaces |
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US7013834B2 (en) * | 2002-04-19 | 2006-03-21 | Nordson Corporation | Plasma treatment system |
-
2005
- 2005-01-05 US US11/030,362 patent/US20050205210A1/en not_active Abandoned
- 2005-01-06 WO PCT/US2005/000423 patent/WO2005067634A2/en active Application Filing
- 2005-01-06 TW TW094100328A patent/TWI257647B/en not_active IP Right Cessation
- 2005-01-06 DE DE112005000153T patent/DE112005000153T5/en not_active Withdrawn
- 2005-01-06 JP JP2006549413A patent/JP2007518278A/en not_active Withdrawn
- 2005-01-06 KR KR1020067013473A patent/KR20060127019A/en not_active Application Discontinuation
- 2005-01-06 CN CNA2005800020057A patent/CN1910308A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4824545A (en) * | 1987-09-18 | 1989-04-25 | Leybold Aktiengesellschaft | Apparatus for coating substrates |
US20020006689A1 (en) * | 1995-12-14 | 2002-01-17 | Mitsutoshi Miyasaka | Thin film semiconductor device and method for producing the same |
US6106634A (en) * | 1999-02-11 | 2000-08-22 | Applied Materials, Inc. | Methods and apparatus for reducing particle contamination during wafer transport |
US6409932B2 (en) * | 2000-04-03 | 2002-06-25 | Matrix Integrated Systems, Inc. | Method and apparatus for increased workpiece throughput |
US20030133773A1 (en) * | 2002-01-14 | 2003-07-17 | Applied Materials, Inc. | Semiconductor wafer preheating |
Also Published As
Publication number | Publication date |
---|---|
DE112005000153T5 (en) | 2006-11-16 |
TWI257647B (en) | 2006-07-01 |
JP2007518278A (en) | 2007-07-05 |
CN1910308A (en) | 2007-02-07 |
KR20060127019A (en) | 2006-12-11 |
TW200535928A (en) | 2005-11-01 |
WO2005067634A2 (en) | 2005-07-28 |
US20050205210A1 (en) | 2005-09-22 |
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