WO2005067027A1 - Replacement gate flow facilitating high yield and incorporation of etch stop layers and/or stressed films - Google Patents
Replacement gate flow facilitating high yield and incorporation of etch stop layers and/or stressed films Download PDFInfo
- Publication number
- WO2005067027A1 WO2005067027A1 PCT/US2004/044077 US2004044077W WO2005067027A1 WO 2005067027 A1 WO2005067027 A1 WO 2005067027A1 US 2004044077 W US2004044077 W US 2004044077W WO 2005067027 A1 WO2005067027 A1 WO 2005067027A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gate electrode
- sacrificial
- etch stop
- stop layer
- nitride
- Prior art date
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04816054.3A EP1719163B1 (en) | 2003-12-30 | 2004-12-24 | Replacement gate flow facilitating high yield and incorporation of etch stop layers and/or stressed films |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/749,196 | 2003-12-30 | ||
US10/749,196 US7078282B2 (en) | 2003-12-30 | 2003-12-30 | Replacement gate flow facilitating high yield and incorporation of etch stop layers and/or stressed films |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005067027A1 true WO2005067027A1 (en) | 2005-07-21 |
Family
ID=34711035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/044077 WO2005067027A1 (en) | 2003-12-30 | 2004-12-24 | Replacement gate flow facilitating high yield and incorporation of etch stop layers and/or stressed films |
Country Status (6)
Country | Link |
---|---|
US (2) | US7078282B2 (en) |
EP (1) | EP1719163B1 (en) |
KR (1) | KR100856436B1 (en) |
CN (1) | CN1902740A (en) |
TW (1) | TWI278026B (en) |
WO (1) | WO2005067027A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103730342A (en) * | 2012-10-10 | 2014-04-16 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
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US20070020860A1 (en) * | 2003-06-26 | 2007-01-25 | Rj Mears, Llc | Method for Making Semiconductor Device Including a Strained Superlattice and Overlying Stress Layer and Related Methods |
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- 2004-12-24 EP EP04816054.3A patent/EP1719163B1/en active Active
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- 2004-12-24 CN CNA2004800395299A patent/CN1902740A/en active Pending
- 2004-12-24 KR KR1020067013083A patent/KR100856436B1/en active IP Right Grant
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Also Published As
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CN1902740A (en) | 2007-01-24 |
US7078282B2 (en) | 2006-07-18 |
KR20060103479A (en) | 2006-09-29 |
US20060237804A1 (en) | 2006-10-26 |
EP1719163B1 (en) | 2014-12-17 |
TW200522171A (en) | 2005-07-01 |
US20050145894A1 (en) | 2005-07-07 |
TWI278026B (en) | 2007-04-01 |
KR100856436B1 (en) | 2008-09-04 |
EP1719163A1 (en) | 2006-11-08 |
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