WO2005059617A3 - Projection objective having a high aperture and a planar end surface - Google Patents

Projection objective having a high aperture and a planar end surface Download PDF

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Publication number
WO2005059617A3
WO2005059617A3 PCT/EP2004/014062 EP2004014062W WO2005059617A3 WO 2005059617 A3 WO2005059617 A3 WO 2005059617A3 EP 2004014062 W EP2004014062 W EP 2004014062W WO 2005059617 A3 WO2005059617 A3 WO 2005059617A3
Authority
WO
WIPO (PCT)
Prior art keywords
projection objective
end surface
planar end
high aperture
optical element
Prior art date
Application number
PCT/EP2004/014062
Other languages
French (fr)
Other versions
WO2005059617A2 (en
Inventor
Susanne Beder
Wolfgang Singer
Original Assignee
Zeiss Carl Smt Ag
Susanne Beder
Wolfgang Singer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/734,623 external-priority patent/US6995930B2/en
Application filed by Zeiss Carl Smt Ag, Susanne Beder, Wolfgang Singer filed Critical Zeiss Carl Smt Ag
Priority to EP04803712A priority Critical patent/EP1697798A2/en
Priority to JP2006543484A priority patent/JP5106858B2/en
Priority to KR1020067011811A priority patent/KR101200654B1/en
Priority to US11/151,465 priority patent/US7466489B2/en
Publication of WO2005059617A2 publication Critical patent/WO2005059617A2/en
Publication of WO2005059617A3 publication Critical patent/WO2005059617A3/en
Priority to US12/269,686 priority patent/US7782538B2/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/18—Optical objectives specially designed for the purposes specified below with lenses having one or more non-spherical faces, e.g. for reducing geometrical aberration
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B13/00—Measuring arrangements characterised by the use of fluids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B17/00—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/082—Catadioptric systems using three curved mirrors
    • G02B17/0828—Catadioptric systems using three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

Abstract

A projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective suitable for microlithography projection exposure machines has a plurality of optical elements transparent for radiation at an operating wavelength of the projection objective. At least one optical element is a high-index optical element made from a high-index material with a refractive index n ≥ 1.6 at the operating wavelength.
PCT/EP2004/014062 2003-12-15 2004-12-10 Projection objective having a high aperture and a planar end surface WO2005059617A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP04803712A EP1697798A2 (en) 2003-12-15 2004-12-10 Projection objective having a high aperture and a planar end surface
JP2006543484A JP5106858B2 (en) 2003-12-15 2004-12-10 Projection objective having a high numerical aperture and a planar end face
KR1020067011811A KR101200654B1 (en) 2003-12-15 2004-12-10 Projection objective having a high aperture and a planar end surface
US11/151,465 US7466489B2 (en) 2003-12-15 2005-06-14 Projection objective having a high aperture and a planar end surface
US12/269,686 US7782538B2 (en) 2003-12-15 2008-11-12 Projection objective having a high aperture and a planar end surface

Applications Claiming Priority (24)

Application Number Priority Date Filing Date Title
US10/734,623 2003-12-15
US10/734,623 US6995930B2 (en) 1999-12-29 2003-12-15 Catadioptric projection objective with geometric beam splitting
US53062303P 2003-12-19 2003-12-19
US60/530,623 2003-12-19
US53097803P 2003-12-22 2003-12-22
US60/530,978 2003-12-22
US53624804P 2004-01-14 2004-01-14
US60/536,248 2004-01-14
US54496704P 2004-02-13 2004-02-13
US60/544,967 2004-02-13
US56800604P 2004-05-04 2004-05-04
US60/568,006 2004-05-04
US58750404P 2004-07-14 2004-07-14
US60/587,504 2004-07-14
US59177504P 2004-07-27 2004-07-27
US60/591,775 2004-07-27
US59220804P 2004-07-29 2004-07-29
US60/592,208 2004-07-29
US61282304P 2004-09-24 2004-09-24
US60/612,823 2004-09-24
US61767404P 2004-10-13 2004-10-13
US60/617,674 2004-10-13
DE102004051730.4 2004-10-22
DE102004051730 2004-10-22

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/734,623 Continuation-In-Part US6995930B2 (en) 1999-12-29 2003-12-15 Catadioptric projection objective with geometric beam splitting

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/151,465 Continuation-In-Part US7466489B2 (en) 2003-12-15 2005-06-14 Projection objective having a high aperture and a planar end surface

Publications (2)

Publication Number Publication Date
WO2005059617A2 WO2005059617A2 (en) 2005-06-30
WO2005059617A3 true WO2005059617A3 (en) 2006-02-09

Family

ID=34705483

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/014062 WO2005059617A2 (en) 2003-12-15 2004-12-10 Projection objective having a high aperture and a planar end surface

Country Status (4)

Country Link
EP (1) EP1697798A2 (en)
JP (1) JP5106858B2 (en)
KR (1) KR101200654B1 (en)
WO (1) WO2005059617A2 (en)

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US9250537B2 (en) 2004-07-12 2016-02-02 Nikon Corporation Immersion exposure apparatus and method with detection of liquid on members of the apparatus
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
US9366972B2 (en) 2002-11-12 2016-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
US9477160B2 (en) 2003-05-13 2016-10-25 Asml Netherland B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

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