WO2005053893A2 - Laser thin film poly-silicon annealing optical system - Google Patents
Laser thin film poly-silicon annealing optical system Download PDFInfo
- Publication number
- WO2005053893A2 WO2005053893A2 PCT/US2004/037618 US2004037618W WO2005053893A2 WO 2005053893 A2 WO2005053893 A2 WO 2005053893A2 US 2004037618 W US2004037618 W US 2004037618W WO 2005053893 A2 WO2005053893 A2 WO 2005053893A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- workpiece
- laser
- output light
- light pulse
- laser output
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0738—Shaping the laser spot into a linear shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Definitions
- the present invention relates to pulsed lasers system for use in manufacturing processes involving treatment of surfaces and/or substrates with laser light over large areas and at high repetition rates, high power and pulse to pulse dose stability and more specifically to thin line optical pulse delivery systems.
- the assembly 20 comprises a laser output beam 22, e.g., the output of a XeCl LS 1000 excimer laser made by Lambda Physik.
- the laser beam 22 is passed through an attenuator 24, which comprises a pair of attenuator plates 26.
- the beam 22 is then expanded in the long axis by a long axis expansion optic 30, including a first telescope lens 32 and a second telescope lens 34, together forming an expanding telescopic element in the long axis of the beam 22.
- FIG. 3 shows a possible lens combination 30 for both magnifying the beam in the short axis and expanding the beam in the long axis, which may comprise, e.g., a cylindrical convex lens 32 followed by a cylindrical concave lens resulting in a ling shaped beam 120 thinned in the axis of a scanning direction and elongated orthogonally to the scanning direction.
- a possible lens combination 30 for both magnifying the beam in the short axis and expanding the beam in the long axis which may comprise, e.g., a cylindrical convex lens 32 followed by a cylindrical concave lens resulting in a ling shaped beam 120 thinned in the axis of a scanning direction and elongated orthogonally to the scanning direction.
- a lens assembly illustrative of the effect of beam homogenization carried out in the long axis beam homogenizer 40 and the short axis beam homogenizer 50 according to aspects of an embodiment of the present invention, including a substrate 140, which may be made of a suitable material capable of optically tolerating the DUV light at the required intensity levels, e.g., MgF 2 or CaF 2 with a thickness of, e.g., about 1.2 mm and on wither side arrays of cylindrical refractive, plano-convex cylindrical microlenses, with, e.g., a lens pitch in the array of, e.g., about 300 microns, resulting in a divergence angle of, e.g., about 1°, and a far-field flat-top intensity distribution.
- a substrate 140 which may be made of a suitable material capable of optically tolerating the DUV light at the required intensity levels, e.g., MgF 2 or CaF 2 with a thickness of,
- Voutsas also notes that if dL is the lateral growth length and dc is the width of the central, nucleated region: w52de ⁇ 2dL ⁇ dc where w is the beam width. Voutsas also notes, that for optimum utilization of the beamlet, it is required that de ⁇ O and dc — ). Also according to Voutsas, the nucleated, "center" region can be effectively eliminated, e.g., by essentially decreasing the beamlet width, while the beam edge region may be restricted but never practically eliminated.
- a high energy, high repetition rate workpiece surface heating method and apparatus may comprise a pulsed XeF laser operating at or above 4000 Hz and producing a laser output light pulse beam at a center wavelength of about 351 nm; an optical system narrowing the laser output light pulse beam to less than 20 ⁇ m in a short axis of the laser output light pulse beam and expanding the laser output light pulse beam to form in a long axis of the beam a workpiece covering extent of the long axis; the optical system including a field stop intermediate the laser and the workpiece; the workpiece comprising a layer to be heated; wherein the optical system focuses the laser output light pulse beam at a field stop with a magnification sufficient to maintain an intensity profile that has sufficiently steep sidewalls to allow the field stop to maintain a sufficiently steep beam profile at the workpiece without blocking the beam profile at too high an intensity level.
- the apparatus may also have a high average power in the laser ouput light pulse beam as delivered to the workpiece and a linebow correction mechanism in a short axis optical assembly.
- the linebow correction mechanism may comprise a plurality of weak cross cylinders.
- the system may comprise a catadioptric projection system. The linewidth due to laser diffraction and divergence maybe less than geometric limitations.
- the system may project adjacent peaks of the nominal XeF spectrum to improve overall depth of focus through the separate center wavelengths of each respective adjacent peak having a different focal plane at the workpiece.
- the system may comprise a linebow is correction mechanism within a field stop optical assembly correcting linebow at the field stop plane and within a workpiece projection optical assembly correcting linebow at the workpiece plane.
- FIG. 8 shows schematically aspects of embodiments of the present invention
- FIG. 9 shows schematically aspects of embodiments of the present invention
- FIG.' s 10a and 10b show beam intensity profiles
- FIG. 11 shows a beam intensity profile
- FIG.' s 12A and 12B show beam intensity profiles
- FIG. 13 shows an optical arrangement according to aspect of an embodiment of the present invention.
- DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS Applicants propose a directional SLS system that has simple optics for crystallization and activation, produces or can produce essentially grains that extend the length of the workpiece, yielding a mobility of 200-400 and a throughput of 35 sheets per hour.
- the system 160 may include an oscillator laser system 162 and an amplifier laser system 164.
- the pulsed laser output light beam producing system 160 may be configured as a master-oscillator, power amplifier system in which the output pulse 180 of the oscillator system is line narrowed, e.g., with a line narrowing module or line narrowing package as is known in the art or may be a power oscillator in which line narrowing is not used.
- the MO may comprises an unstable resonator, comprising a concave mirror 170 and a convex mirror 172, illustratively shown to be aligned for off-axis oscillation to produce an output beam 180 by electrical discharge between a cathode 174 and an anode 176 in the gas discharge chamber of the oscillator laser system 162.
- a bowtie effect is created, i.e., an expansion of the beam in the short axis of the beam towards the longitudinal ends of the beam in the long axis of the beam.
- the, e.g., 20 ⁇ m grows to, e.g., between about 40 ⁇ m and 60 ⁇ m.
- this beam growth of between about 2X and 12X, depending on beam linewidth in the center of the long axis of the beam is not acceptable.
- the system contemplated can, e.g., have an N.A.
- FIG. 10A shows an example of an intensity profile in the short axis of a beam delivered according to aspects of an embodiment of the present invention to the mask plane, showing a side wall slope of 0.02 ⁇ m from 10% to 90%> and a beam linewidth of about 130 ⁇ m FWHM.
- FIG. IB shows a beam trimmed/chopped by the field stop slit (mask) to form a beam with about lOO ⁇ m FWHM and a slope of 0.01 ⁇ m from 10% to 90%) exiting the mask.
- LWD ⁇ FF of the mask is approximately equal to RED(LW DIFF )-
- the linewidth divergence LW D ⁇ V is approximately equal to f sl of the system times ⁇ s the short axis divergence of the laser beam.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04810725.4A EP1689552B1 (en) | 2003-11-26 | 2004-11-12 | Laser thin film poly-silicon annealing optical system |
JP2006541258A JP5183927B2 (en) | 2003-11-26 | 2004-11-12 | Optical system for annealing polysilicon thin film by laser. |
KR1020067012238A KR101167324B1 (en) | 2003-11-26 | 2004-11-12 | Laser thin film poly-silicon annealing optical system |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72299203A | 2003-11-26 | 2003-11-26 | |
US10/722,992 | 2003-11-26 | ||
US10/781,251 | 2004-02-18 | ||
US10/781,251 US7167499B2 (en) | 2001-04-18 | 2004-02-18 | Very high energy, high stability gas discharge laser surface treatment system |
US10/884,101 | 2004-07-01 | ||
US10/884,101 US7009140B2 (en) | 2001-04-18 | 2004-07-01 | Laser thin film poly-silicon annealing optical system |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005053893A2 true WO2005053893A2 (en) | 2005-06-16 |
WO2005053893A3 WO2005053893A3 (en) | 2005-07-07 |
Family
ID=34657986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/037618 WO2005053893A2 (en) | 2003-11-26 | 2004-11-12 | Laser thin film poly-silicon annealing optical system |
Country Status (5)
Country | Link |
---|---|
US (3) | US7009140B2 (en) |
EP (2) | EP2375513A3 (en) |
JP (1) | JP5183927B2 (en) |
KR (1) | KR101167324B1 (en) |
WO (1) | WO2005053893A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108759794A (en) * | 2018-05-14 | 2018-11-06 | 仲杏英 | Multi-use architecture graticule lamp |
Families Citing this family (91)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7009140B2 (en) * | 2001-04-18 | 2006-03-07 | Cymer, Inc. | Laser thin film poly-silicon annealing optical system |
US7415056B2 (en) * | 2006-03-31 | 2008-08-19 | Cymer, Inc. | Confocal pulse stretcher |
US7564888B2 (en) * | 2004-05-18 | 2009-07-21 | Cymer, Inc. | High power excimer laser with a pulse stretcher |
US7247813B2 (en) * | 2004-10-13 | 2007-07-24 | Advanced Lcd Technologies Development Center Co., Ltd. | Crystallization apparatus using pulsed laser beam |
FR2878185B1 (en) * | 2004-11-22 | 2008-11-07 | Sidel Sas | PROCESS FOR MANUFACTURING CONTAINERS COMPRISING A HEATING STEP BY MEANS OF A COHERENT ELECTROMAGNETIC RADIATION BEAM |
US7425296B2 (en) * | 2004-12-03 | 2008-09-16 | Pressco Technology Inc. | Method and system for wavelength specific thermal irradiation and treatment |
US10857722B2 (en) * | 2004-12-03 | 2020-12-08 | Pressco Ip Llc | Method and system for laser-based, wavelength specific infrared irradiation treatment |
JP2007110064A (en) * | 2005-09-14 | 2007-04-26 | Ishikawajima Harima Heavy Ind Co Ltd | Laser annealing method and device thereof |
US7317179B2 (en) * | 2005-10-28 | 2008-01-08 | Cymer, Inc. | Systems and methods to shape laser light as a homogeneous line beam for interaction with a film deposited on a substrate |
US7471455B2 (en) | 2005-10-28 | 2008-12-30 | Cymer, Inc. | Systems and methods for generating laser light shaped as a line beam |
US7920616B2 (en) * | 2005-11-01 | 2011-04-05 | Cymer, Inc. | Laser system |
US20090296758A1 (en) * | 2005-11-01 | 2009-12-03 | Cymer, Inc. | Laser system |
US7885309B2 (en) | 2005-11-01 | 2011-02-08 | Cymer, Inc. | Laser system |
US7999915B2 (en) * | 2005-11-01 | 2011-08-16 | Cymer, Inc. | Laser system |
US7746913B2 (en) | 2005-11-01 | 2010-06-29 | Cymer, Inc. | Laser system |
US7715459B2 (en) * | 2005-11-01 | 2010-05-11 | Cymer, Inc. | Laser system |
US7778302B2 (en) * | 2005-11-01 | 2010-08-17 | Cymer, Inc. | Laser system |
JP5506194B2 (en) * | 2005-11-01 | 2014-05-28 | サイマー インコーポレイテッド | Laser system |
US7630424B2 (en) * | 2005-11-01 | 2009-12-08 | Cymer, Inc. | Laser system |
US7643529B2 (en) | 2005-11-01 | 2010-01-05 | Cymer, Inc. | Laser system |
US20090296755A1 (en) * | 2005-11-01 | 2009-12-03 | Cymer, Inc. | Laser system |
US8183498B2 (en) * | 2006-05-01 | 2012-05-22 | Tcz, Llc | Systems and method for optimization of laser beam spatial intensity profile |
US8927898B2 (en) * | 2006-05-01 | 2015-01-06 | Tcz, Llc | Systems and method for optimization of laser beam spatial intensity profile |
US7848835B2 (en) * | 2006-06-02 | 2010-12-07 | Cymer, Inc. | High power laser flat panel workpiece treatment system controller |
US7433372B2 (en) * | 2006-06-05 | 2008-10-07 | Cymer, Inc. | Device and method to stabilize beam shape and symmetry for high energy pulsed laser applications |
US20070278193A1 (en) * | 2006-06-05 | 2007-12-06 | Cymer, Inc. | Device and method to create a low divergence, high power laser beam for material processing applications |
US8803027B2 (en) * | 2006-06-05 | 2014-08-12 | Cymer, Llc | Device and method to create a low divergence, high power laser beam for material processing applications |
US7615722B2 (en) * | 2006-07-17 | 2009-11-10 | Coherent, Inc. | Amorphous silicon crystallization using combined beams from optically pumped semiconductor lasers |
FR2913210B1 (en) * | 2007-03-02 | 2009-05-29 | Sidel Participations | IMPROVEMENTS IN THE HEATING OF PLASTIC MATERIALS BY INFRARED RADIATION |
FR2917005B1 (en) * | 2007-06-11 | 2009-08-28 | Sidel Participations | HEATING FACILITY FOR PREFORMING BODIES FOR BLOWING CONTAINERS |
DE102008033358B4 (en) | 2007-07-19 | 2014-04-03 | Coherent Gmbh | Device and method for redistributing the beam parameter product of a laser beam |
DE102007044298B3 (en) * | 2007-09-17 | 2009-02-26 | Coherent Gmbh | Method and arrangement for generating a laser beam with a linear beam cross section |
US8723073B2 (en) * | 2008-02-07 | 2014-05-13 | Cymer, Llc | Illumination apparatus and method for controlling energy of a laser source |
WO2011066548A1 (en) * | 2009-11-30 | 2011-06-03 | Uvt Tech Systems, Inc. | Laser doping |
JP5518612B2 (en) * | 2010-07-20 | 2014-06-11 | 株式会社ディスコ | Optical apparatus and laser processing apparatus including the same |
KR101777289B1 (en) * | 2010-11-05 | 2017-09-12 | 삼성디스플레이 주식회사 | Crystallization apparatus using Sequential Lateral Solidification |
JP5787382B2 (en) | 2011-02-28 | 2015-09-30 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Illumination system of microlithographic projection exposure apparatus |
US8937770B2 (en) * | 2012-07-24 | 2015-01-20 | Coherent Gmbh | Excimer laser apparatus projecting a beam with a selectively variable short-axis beam profile |
TWI499146B (en) | 2012-12-17 | 2015-09-01 | Ind Tech Res Inst | Beam generating apparatus |
US9842665B2 (en) | 2013-02-21 | 2017-12-12 | Nlight, Inc. | Optimization of high resolution digitally encoded laser scanners for fine feature marking |
US9413137B2 (en) | 2013-03-15 | 2016-08-09 | Nlight, Inc. | Pulsed line beam device processing systems using laser diodes |
US10226837B2 (en) | 2013-03-15 | 2019-03-12 | Nlight, Inc. | Thermal processing with line beams |
KR102163606B1 (en) * | 2013-03-27 | 2020-10-08 | 고쿠리쓰다이가쿠호진 규슈다이가쿠 | Laser annealing device |
CN103236400B (en) * | 2013-03-29 | 2015-07-08 | 京东方科技集团股份有限公司 | Production method of low-temperature polysilicon thin film and production method of thin-film transistor |
CN103236399A (en) | 2013-04-12 | 2013-08-07 | 上海和辉光电有限公司 | Method and device for improving polycrystalline silicon crystallization rate |
US9726859B1 (en) | 2014-03-16 | 2017-08-08 | Navitar Industries, Llc | Optical assembly for a wide field of view camera with low TV distortion |
US9494772B1 (en) | 2014-03-16 | 2016-11-15 | Hyperion Development, LLC | Optical assembly for a wide field of view point action camera with low field curvature |
US9316820B1 (en) | 2014-03-16 | 2016-04-19 | Hyperion Development, LLC | Optical assembly for a wide field of view point action camera with low astigmatism |
US9316808B1 (en) | 2014-03-16 | 2016-04-19 | Hyperion Development, LLC | Optical assembly for a wide field of view point action camera with a low sag aspheric lens element |
US10139595B1 (en) | 2014-03-16 | 2018-11-27 | Navitar Industries, Llc | Optical assembly for a compact wide field of view digital camera with low first lens diameter to image diagonal ratio |
US10386604B1 (en) | 2014-03-16 | 2019-08-20 | Navitar Industries, Llc | Compact wide field of view digital camera with stray light impact suppression |
US9995910B1 (en) | 2014-03-16 | 2018-06-12 | Navitar Industries, Llc | Optical assembly for a compact wide field of view digital camera with high MTF |
US9091843B1 (en) | 2014-03-16 | 2015-07-28 | Hyperion Development, LLC | Optical assembly for a wide field of view point action camera with low track length to focal length ratio |
US10545314B1 (en) | 2014-03-16 | 2020-01-28 | Navitar Industries, Llc | Optical assembly for a compact wide field of view digital camera with low lateral chromatic aberration |
US10069271B2 (en) | 2014-06-02 | 2018-09-04 | Nlight, Inc. | Scalable high power fiber laser |
US10310201B2 (en) | 2014-08-01 | 2019-06-04 | Nlight, Inc. | Back-reflection protection and monitoring in fiber and fiber-delivered lasers |
US9837783B2 (en) | 2015-01-26 | 2017-12-05 | Nlight, Inc. | High-power, single-mode fiber sources |
US10050404B2 (en) | 2015-03-26 | 2018-08-14 | Nlight, Inc. | Fiber source with cascaded gain stages and/or multimode delivery fiber with low splice loss |
US9835835B1 (en) | 2015-04-10 | 2017-12-05 | Navitar Industries, Llc | Projection zoom lens and camera |
CN107924023B (en) | 2015-07-08 | 2020-12-01 | 恩耐公司 | Fibers having suppressed center refractive index for increased beam parameter product |
CN108369315B (en) | 2015-09-24 | 2020-08-04 | 恩耐公司 | Apparatus and method for controlling beam parameter product |
KR102440115B1 (en) | 2015-11-13 | 2022-09-05 | 삼성디스플레이 주식회사 | Method of excimer laser annealing |
US11179807B2 (en) | 2015-11-23 | 2021-11-23 | Nlight, Inc. | Fine-scale temporal control for laser material processing |
EP3978184A1 (en) | 2015-11-23 | 2022-04-06 | NLIGHT, Inc. | Method and apparatus for fine-scale temporal control for laser beam material processing |
US10466494B2 (en) * | 2015-12-18 | 2019-11-05 | Nlight, Inc. | Reverse interleaving for laser line generators |
JP6644422B2 (en) * | 2016-03-09 | 2020-02-12 | 住友重機械工業株式会社 | Laser processing equipment |
US10663742B2 (en) * | 2016-09-29 | 2020-05-26 | Nlight, Inc. | Method and system for cutting a material using a laser having adjustable beam characteristics |
US10668535B2 (en) * | 2016-09-29 | 2020-06-02 | Nlight, Inc. | Method of forming three-dimensional objects |
US10646963B2 (en) * | 2016-09-29 | 2020-05-12 | Nlight, Inc. | Use of variable beam parameters to control a melt pool |
US10661391B2 (en) * | 2016-09-29 | 2020-05-26 | Nlight, Inc. | Method of forming pores in three-dimensional objects |
US10656440B2 (en) * | 2016-09-29 | 2020-05-19 | Nlight, Inc. | Fiber optical beam delivery device producing output exhibiting intensity distribution profile having non-zero ellipticity |
US10673198B2 (en) * | 2016-09-29 | 2020-06-02 | Nlight, Inc. | Fiber-coupled laser with time varying beam characteristics |
US10668567B2 (en) * | 2016-09-29 | 2020-06-02 | Nlight, Inc. | Multi-operation laser tooling for deposition and material processing operations |
US10732439B2 (en) * | 2016-09-29 | 2020-08-04 | Nlight, Inc. | Fiber-coupled device for varying beam characteristics |
US10423015B2 (en) * | 2016-09-29 | 2019-09-24 | Nlight, Inc. | Adjustable beam characteristics |
US10673197B2 (en) * | 2016-09-29 | 2020-06-02 | Nlight, Inc. | Fiber-based optical modulator |
US10670872B2 (en) * | 2016-09-29 | 2020-06-02 | Nlight, Inc. | All-fiber optical beam switch |
US10656427B2 (en) * | 2016-09-29 | 2020-05-19 | Nlight, Inc. | Multicore fiber-coupled optical probing techniques |
US10649241B2 (en) * | 2016-09-29 | 2020-05-12 | Nlight, Inc. | Multi-function semiconductor and electronics processing |
US10661342B2 (en) * | 2016-09-29 | 2020-05-26 | Nlight, Inc. | Additive manufacturing systems and methods for the same |
US10684487B2 (en) * | 2016-09-29 | 2020-06-16 | Nlight, Inc. | Frequency-converted optical beams having adjustable beam characteristics |
US10673199B2 (en) * | 2016-09-29 | 2020-06-02 | Nlight, Inc. | Fiber-based saturable absorber |
US10739621B2 (en) * | 2016-09-29 | 2020-08-11 | Nlight, Inc. | Methods of and systems for materials processing using optical beams |
US10668537B2 (en) * | 2016-09-29 | 2020-06-02 | Nlight, Inc. | Systems for and methods of temperature control in additive manufacturing |
US10730785B2 (en) * | 2016-09-29 | 2020-08-04 | Nlight, Inc. | Optical fiber bending mechanisms |
CN106783536B (en) * | 2016-11-29 | 2021-11-30 | 京东方科技集团股份有限公司 | Laser annealing equipment, polycrystalline silicon thin film and preparation method of thin film transistor |
KR20200111868A (en) | 2019-03-19 | 2020-10-05 | 삼성디스플레이 주식회사 | Display device including polycrystalline silicon layer, method of manufacturing polycrystalline silicon layer, and method of manufacturing display device |
DE102019118676B4 (en) * | 2019-07-10 | 2021-10-21 | Innovavent Gmbh | Optical system for homogenizing the intensity of light radiation and system for processing a semiconductor material layer |
CN110444998B (en) * | 2019-08-02 | 2020-05-22 | 航天科工微电子系统研究院有限公司 | Method for aligning, installing and adjusting unstable cavity solid laser |
KR20210057265A (en) * | 2019-11-11 | 2021-05-21 | 삼성전자주식회사 | laser annealing apparatus and manufacturing method of semiconductor device using the same |
CN112951745B (en) * | 2021-03-04 | 2023-02-17 | 重庆京东方显示技术有限公司 | Laser annealing equipment |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020191654A1 (en) | 2001-01-29 | 2002-12-19 | Brian Klene | Laser lithography light source with beam delivery |
Family Cites Families (103)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4223279A (en) | 1977-07-18 | 1980-09-16 | Mathematical Sciences Northwest, Inc. | Pulsed electric discharge laser utilizing water dielectric blumlein transmission line |
US4410992A (en) | 1980-03-26 | 1983-10-18 | Laser Science, Inc. | Generation of pulsed laser radiation at a finely controlled frequency by transient regerative amplification |
US4550408A (en) | 1981-02-27 | 1985-10-29 | Heinrich Karning | Method and apparatus for operating a gas laser |
US4455658A (en) | 1982-04-20 | 1984-06-19 | Sutter Jr Leroy V | Coupling circuit for use with a transversely excited gas laser |
DE3406677A1 (en) | 1984-02-24 | 1985-09-05 | Fa. Carl Zeiss, 7920 Heidenheim | DEVICE FOR COMPENSATING THE EMISSION OF A LASER BEAM |
US4606034A (en) * | 1985-02-19 | 1986-08-12 | Board Of Trustees, University Of Illinois | Enhanced laser power output |
US4891820A (en) | 1985-12-19 | 1990-01-02 | Rofin-Sinar, Inc. | Fast axial flow laser circulating system |
US5315611A (en) | 1986-09-25 | 1994-05-24 | The United States Of America As Represented By The United States Department Of Energy | High average power magnetic modulator for metal vapor lasers |
US5189678A (en) | 1986-09-29 | 1993-02-23 | The United States Of America As Represented By The United States Department Of Energy | Coupling apparatus for a metal vapor laser |
JPS6384789A (en) * | 1986-09-26 | 1988-04-15 | Semiconductor Energy Lab Co Ltd | Light working method |
US5023884A (en) | 1988-01-15 | 1991-06-11 | Cymer Laser Technologies | Compact excimer laser |
US4959840A (en) | 1988-01-15 | 1990-09-25 | Cymer Laser Technologies | Compact excimer laser including an electrode mounted in insulating relationship to wall of the laser |
US5025446A (en) | 1988-04-01 | 1991-06-18 | Laserscope | Intra-cavity beam relay for optical harmonic generation |
US5005180A (en) | 1989-09-01 | 1991-04-02 | Schneider (Usa) Inc. | Laser catheter system |
US5025445A (en) | 1989-11-22 | 1991-06-18 | Cymer Laser Technologies | System for, and method of, regulating the wavelength of a light beam |
US5471965A (en) | 1990-12-24 | 1995-12-05 | Kapich; Davorin D. | Very high speed radial inflow hydraulic turbine |
KR100269350B1 (en) | 1991-11-26 | 2000-10-16 | 구본준 | Manufacturing Method of Thin Film Transistor |
JPH06124913A (en) * | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | Laser treatment |
US5416391A (en) | 1992-07-31 | 1995-05-16 | Correa; Paulo N. | Electromechanical transduction of plasma pulses |
US5643801A (en) * | 1992-11-06 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method and alignment |
US5359620A (en) | 1992-11-12 | 1994-10-25 | Cymer Laser Technologies | Apparatus for, and method of, maintaining a clean window in a laser |
JP2706716B2 (en) * | 1993-04-16 | 1998-01-28 | 株式会社 半導体エネルギー研究所 | Film processing apparatus and film processing method |
US5313481A (en) | 1993-09-29 | 1994-05-17 | The United States Of America As Represented By The United States Department Of Energy | Copper laser modulator driving assembly including a magnetic compression laser |
US5778016A (en) | 1994-04-01 | 1998-07-07 | Imra America, Inc. | Scanning temporal ultrafast delay methods and apparatuses therefor |
US5448580A (en) | 1994-07-05 | 1995-09-05 | The United States Of America As Represented By The United States Department Of Energy | Air and water cooled modulator |
US6300176B1 (en) | 1994-07-22 | 2001-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method |
JP3535241B2 (en) | 1994-11-18 | 2004-06-07 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
US5618461A (en) * | 1994-11-30 | 1997-04-08 | Micron Technology, Inc. | Reflectance method for accurate process calibration in semiconductor wafer heat treatment |
EP1207407A2 (en) * | 1995-04-07 | 2002-05-22 | Rikagaku Kenkyusho | Radiation beam position monitor and position measurement method |
US5863017A (en) | 1996-01-05 | 1999-01-26 | Cymer, Inc. | Stabilized laser platform and module interface |
JP3917231B2 (en) | 1996-02-06 | 2007-05-23 | 株式会社半導体エネルギー研究所 | Laser irradiation apparatus and laser irradiation method |
JP3301054B2 (en) * | 1996-02-13 | 2002-07-15 | 株式会社半導体エネルギー研究所 | Laser irradiation device and laser irradiation method |
JPH09321311A (en) * | 1996-05-24 | 1997-12-12 | Sony Corp | Manufacture of thin film semiconductor device |
CA2256699C (en) | 1996-05-28 | 2003-02-25 | The Trustees Of Columbia University In The City Of New York | Crystallization processing of semiconductor film regions on a substrate, and devices made therewith |
US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
US5736709A (en) * | 1996-08-12 | 1998-04-07 | Armco Inc. | Descaling metal with a laser having a very short pulse width and high average power |
US5771258A (en) | 1997-02-11 | 1998-06-23 | Cymer, Inc. | Aerodynamic chamber design for high pulse repetition rate excimer lasers |
US5982800A (en) | 1997-04-23 | 1999-11-09 | Cymer, Inc. | Narrow band excimer laser |
US5991324A (en) | 1998-03-11 | 1999-11-23 | Cymer, Inc. | Reliable. modular, production quality narrow-band KRF excimer laser |
US6128323A (en) | 1997-04-23 | 2000-10-03 | Cymer, Inc. | Reliable modular production quality narrow-band high REP rate excimer laser |
US6192064B1 (en) | 1997-07-01 | 2001-02-20 | Cymer, Inc. | Narrow band laser with fine wavelength control |
US6094448A (en) | 1997-07-01 | 2000-07-25 | Cymer, Inc. | Grating assembly with bi-directional bandwidth control |
US6014398A (en) | 1997-10-10 | 2000-01-11 | Cymer, Inc. | Narrow band excimer laser with gas additive |
US6330261B1 (en) | 1997-07-18 | 2001-12-11 | Cymer, Inc. | Reliable, modular, production quality narrow-band high rep rate ArF excimer laser |
US6018537A (en) | 1997-07-18 | 2000-01-25 | Cymer, Inc. | Reliable, modular, production quality narrow-band high rep rate F2 laser |
US5852621A (en) | 1997-07-21 | 1998-12-22 | Cymer, Inc. | Pulse laser with pulse energy trimmer |
US6721340B1 (en) | 1997-07-22 | 2004-04-13 | Cymer, Inc. | Bandwidth control technique for a laser |
US6317447B1 (en) | 2000-01-25 | 2001-11-13 | Cymer, Inc. | Electric discharge laser with acoustic chirp correction |
US6671294B2 (en) | 1997-07-22 | 2003-12-30 | Cymer, Inc. | Laser spectral engineering for lithographic process |
US6757316B2 (en) | 1999-12-27 | 2004-06-29 | Cymer, Inc. | Four KHz gas discharge laser |
US6853653B2 (en) | 1997-07-22 | 2005-02-08 | Cymer, Inc. | Laser spectral engineering for lithographic process |
US6067306A (en) | 1997-08-08 | 2000-05-23 | Cymer, Inc. | Laser-illuminated stepper or scanner with energy sensor feedback |
US6188710B1 (en) | 1997-10-10 | 2001-02-13 | Cymer, Inc. | Narrow band gas discharge laser with gas additive |
US5953360A (en) | 1997-10-24 | 1999-09-14 | Synrad, Inc. | All metal electrode sealed gas laser |
US5978406A (en) | 1998-01-30 | 1999-11-02 | Cymer, Inc. | Fluorine control system for excimer lasers |
US6151349A (en) | 1998-03-04 | 2000-11-21 | Cymer, Inc. | Automatic fluorine control system |
US6240117B1 (en) | 1998-01-30 | 2001-05-29 | Cymer, Inc. | Fluorine control system with fluorine monitor |
US6016325A (en) | 1998-04-27 | 2000-01-18 | Cymer, Inc. | Magnetic modulator voltage and temperature timing compensation circuit |
KR100292048B1 (en) | 1998-06-09 | 2001-07-12 | 구본준, 론 위라하디락사 | Manufacturing Method of Thin Film Transistor Liquid Crystal Display |
US6618421B2 (en) | 1998-07-18 | 2003-09-09 | Cymer, Inc. | High repetition rate gas discharge laser with precise pulse timing control |
US6477193B2 (en) | 1998-07-18 | 2002-11-05 | Cymer, Inc. | Extreme repetition rate gas discharge laser with improved blower motor |
US6208675B1 (en) | 1998-08-27 | 2001-03-27 | Cymer, Inc. | Blower assembly for a pulsed laser system incorporating ceramic bearings |
US6067311A (en) | 1998-09-04 | 2000-05-23 | Cymer, Inc. | Excimer laser with pulse multiplier |
US6567450B2 (en) | 1999-12-10 | 2003-05-20 | Cymer, Inc. | Very narrow band, two chamber, high rep rate gas discharge laser system |
US6208674B1 (en) | 1998-09-18 | 2001-03-27 | Cymer, Inc. | Laser chamber with fully integrated electrode feedthrough main insulator |
EP1744349A3 (en) * | 1998-10-05 | 2007-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device |
US6212211B1 (en) | 1998-10-09 | 2001-04-03 | Cymer, Inc. | Shock wave dissipating laser chamber |
WO2000046402A1 (en) | 1999-02-05 | 2000-08-10 | Amersham Pharmacia Biotech Uk Limited | Genomic analysis method |
US6219368B1 (en) | 1999-02-12 | 2001-04-17 | Lambda Physik Gmbh | Beam delivery system for molecular fluorine (F2) laser |
CN1156894C (en) * | 1999-03-05 | 2004-07-07 | 精工爱普生株式会社 | Method for producing thin film semiconductor device |
JP4588153B2 (en) * | 1999-03-08 | 2010-11-24 | 株式会社半導体エネルギー研究所 | Laser irradiation device |
US6393042B1 (en) * | 1999-03-08 | 2002-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer and laser irradiation apparatus |
US6782031B1 (en) | 1999-03-19 | 2004-08-24 | Cymer, Inc. | Long-pulse pulse power system for gas discharge laser |
US6104735A (en) | 1999-04-13 | 2000-08-15 | Cymer, Inc. | Gas discharge laser with magnetic bearings and magnetic reluctance centering for fan drive assembly |
US6164116A (en) | 1999-05-06 | 2000-12-26 | Cymer, Inc. | Gas module valve automated test fixture |
US6625191B2 (en) | 1999-12-10 | 2003-09-23 | Cymer, Inc. | Very narrow band, two chamber, high rep rate gas discharge laser system |
US6381257B1 (en) | 1999-09-27 | 2002-04-30 | Cymer, Inc. | Very narrow band injection seeded F2 lithography laser |
US6535531B1 (en) | 2001-11-29 | 2003-03-18 | Cymer, Inc. | Gas discharge laser with pulse multiplier |
US6882674B2 (en) | 1999-12-27 | 2005-04-19 | Cymer, Inc. | Four KHz gas discharge laser system |
US6865210B2 (en) | 2001-05-03 | 2005-03-08 | Cymer, Inc. | Timing control for two-chamber gas discharge laser system |
US6414979B2 (en) | 2000-06-09 | 2002-07-02 | Cymer, Inc. | Gas discharge laser with blade-dielectric electrode |
US6795474B2 (en) | 2000-11-17 | 2004-09-21 | Cymer, Inc. | Gas discharge laser with improved beam path |
US6549551B2 (en) | 1999-09-27 | 2003-04-15 | Cymer, Inc. | Injection seeded laser with precise timing control |
KR100327087B1 (en) | 1999-06-28 | 2002-03-13 | 구본준, 론 위라하디락사 | Laser annealing method |
JP2001023918A (en) * | 1999-07-08 | 2001-01-26 | Nec Corp | Semiconductor thin-film forming apparatus |
US6573531B1 (en) | 1999-09-03 | 2003-06-03 | The Trustees Of Columbia University In The City Of New York | Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures |
JP2001091970A (en) | 1999-09-22 | 2001-04-06 | Sony Corp | Method for manufacturing liquid crystal display panel |
US6359922B1 (en) | 1999-10-20 | 2002-03-19 | Cymer, Inc. | Single chamber gas discharge laser with line narrowed seed beam |
US6532247B2 (en) | 2000-02-09 | 2003-03-11 | Cymer, Inc. | Laser wavelength control unit with piezoelectric driver |
US6408260B1 (en) | 2000-02-16 | 2002-06-18 | Cymer, Inc. | Laser lithography quality alarm system |
US6368945B1 (en) | 2000-03-16 | 2002-04-09 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification |
US6466365B1 (en) | 2000-04-07 | 2002-10-15 | Corning Incorporated | Film coated optical lithography elements and method of making |
US6509547B1 (en) * | 2000-04-07 | 2003-01-21 | Resonetics, Inc. | Method for laser stripping of optical fiber and flat cable |
JP2001308313A (en) | 2000-04-21 | 2001-11-02 | Nec Corp | Charge transfer device and solid-state image pickup device using it |
US6451631B1 (en) * | 2000-08-10 | 2002-09-17 | Hitachi America, Ltd. | Thin film crystal growth by laser annealing |
US6839372B2 (en) | 2000-11-17 | 2005-01-04 | Cymer, Inc. | Gas discharge ultraviolet laser with enclosed beam path with added oxidizer |
US6750972B2 (en) | 2000-11-17 | 2004-06-15 | Cymer, Inc. | Gas discharge ultraviolet wavemeter with enhanced illumination |
US6582827B1 (en) | 2000-11-27 | 2003-06-24 | The Trustees Of Columbia University In The City Of New York | Specialized substrates for use in sequential lateral solidification processing |
US6538737B2 (en) | 2001-01-29 | 2003-03-25 | Cymer, Inc. | High resolution etalon-grating spectrometer |
US7009140B2 (en) * | 2001-04-18 | 2006-03-07 | Cymer, Inc. | Laser thin film poly-silicon annealing optical system |
TW558861B (en) * | 2001-06-15 | 2003-10-21 | Semiconductor Energy Lab | Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device |
US7107033B2 (en) * | 2002-04-17 | 2006-09-12 | Paratek Microwave, Inc. | Smart radio incorporating Parascan® varactors embodied within an intelligent adaptive RF front end |
JP2004119919A (en) | 2002-09-30 | 2004-04-15 | Hitachi Ltd | Semiconductor thin film and method for manufacturing the same |
-
2004
- 2004-07-01 US US10/884,101 patent/US7009140B2/en not_active Expired - Lifetime
- 2004-11-12 JP JP2006541258A patent/JP5183927B2/en active Active
- 2004-11-12 WO PCT/US2004/037618 patent/WO2005053893A2/en active Application Filing
- 2004-11-12 EP EP11155113.1A patent/EP2375513A3/en not_active Withdrawn
- 2004-11-12 EP EP04810725.4A patent/EP1689552B1/en active Active
- 2004-11-12 KR KR1020067012238A patent/KR101167324B1/en active IP Right Grant
-
2005
- 2005-08-11 US US11/201,877 patent/US7884303B2/en not_active Expired - Fee Related
-
2010
- 2010-12-27 US US12/979,292 patent/US8362391B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020191654A1 (en) | 2001-01-29 | 2002-12-19 | Brian Klene | Laser lithography light source with beam delivery |
Non-Patent Citations (7)
Title |
---|
"On-Chip bottom gate polysilicon and amorphous silicon thin-film transistors rs-ing excimer laser annealed silicon nitride gate", JPN. J. APPL. PHYS., vol. 29, no. 10, 1990, pages L1775 - L1777 |
B. CROWTHER ET AL.: "A fly's eye condenser system for uniform illumination", PROC. OF SPIE, INTERNATIONAL OPTICAL DESIGN CONFERENCE, vol. 4832, 2002, pages 4832 - 35 |
K. SHIMIZU ET AL.: "high-performance poly-si thin-film transistors with excimer 1aser annealed silicon nitride gate", JPN. J. APPL. PHYS., vol. 32, no. 1B, 1993, pages 452 - 57 |
M. FURUTA ET AL.: "Bottom-gate poly-si thin film transistors using XeCl excimer laser and ion doping techniques", IEEE TRANS. ELECTRON DEVICES, vol. 40, no. 14, 1993, pages 1964 - 69 |
See also references of EP1689552A4 |
Y. OZAKI ET AL.: "Cylindrical fly's eye lens for intensity redistribution of an excimer laser beam", APPLIED OPTICS, vol. 28, no. 1, January 1989 (1989-01-01), pages 106 |
Y. SUN ET AL.: "Excimer laser annealing process for polisilicon TFT AMLCD application", RECORD OF 1994 INT. DISP. RES. CONF., 1994, pages 134 - 47 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108759794A (en) * | 2018-05-14 | 2018-11-06 | 仲杏英 | Multi-use architecture graticule lamp |
Also Published As
Publication number | Publication date |
---|---|
JP2007512709A (en) | 2007-05-17 |
KR20060126666A (en) | 2006-12-08 |
US7884303B2 (en) | 2011-02-08 |
US8362391B2 (en) | 2013-01-29 |
KR101167324B1 (en) | 2012-07-19 |
EP1689552B1 (en) | 2016-10-05 |
US20110163077A1 (en) | 2011-07-07 |
EP2375513A3 (en) | 2017-07-19 |
EP1689552A4 (en) | 2008-12-03 |
US7009140B2 (en) | 2006-03-07 |
US20050269300A1 (en) | 2005-12-08 |
US20050035103A1 (en) | 2005-02-17 |
EP1689552A2 (en) | 2006-08-16 |
EP2375513A2 (en) | 2011-10-12 |
JP5183927B2 (en) | 2013-04-17 |
WO2005053893A3 (en) | 2005-07-07 |
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