WO2005050699A3 - Method of forming a semiconductor package and structure thereof - Google Patents

Method of forming a semiconductor package and structure thereof Download PDF

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Publication number
WO2005050699A3
WO2005050699A3 PCT/US2004/029845 US2004029845W WO2005050699A3 WO 2005050699 A3 WO2005050699 A3 WO 2005050699A3 US 2004029845 W US2004029845 W US 2004029845W WO 2005050699 A3 WO2005050699 A3 WO 2005050699A3
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WO
WIPO (PCT)
Prior art keywords
conductive layer
wire bond
forming
mold
electrically coupled
Prior art date
Application number
PCT/US2004/029845
Other languages
French (fr)
Other versions
WO2005050699A2 (en
Inventor
Dave S Mahadevan
Michael E Chapman
Arvind S Salian
Original Assignee
Freescale Semiconductor Inc
Dave S Mahadevan
Michael E Chapman
Arvind S Salian
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc, Dave S Mahadevan, Michael E Chapman, Arvind S Salian filed Critical Freescale Semiconductor Inc
Priority to EP04817765A priority Critical patent/EP1668699A2/en
Priority to JP2006528047A priority patent/JP4608494B2/en
Publication of WO2005050699A2 publication Critical patent/WO2005050699A2/en
Publication of WO2005050699A3 publication Critical patent/WO2005050699A3/en
Priority to KR1020067005846A priority patent/KR101076972B1/en

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract

An electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed by forming a conductive layer (42, 64) over a mold encapsulant (35, 62). The conductive layer (42, 64) may be electrically coupled using a wire to the leadframe (10, 52) of the semiconductor package (2, 50). The electrical coupling can be performed by wire bonding two device portions (2, 4, 6, 8) of a leadframe (10) together and then cutting the wire bond (32) by forming a groove (40) in the overlying mold encapsulant (35) to form two wires (33). The conductive layer (42) is then electrically coupled to each of the two wires (33). In another embodiment, a looped wire bond (61) is formed on top of a semiconductor die (57). After mold encapsulation, portions of the mold encapsulant (62) are removed to expose portions of the looped wire bond (61). The conductive layer (64) is then formed over the mold encapsulant (62) and the exposed portion of the looped wire bond (61) so that the conductive layer (64) is electrically coupled to the looped wire bond (61).
PCT/US2004/029845 2003-09-25 2004-09-14 Method of forming a semiconductor package and structure thereof WO2005050699A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP04817765A EP1668699A2 (en) 2003-09-25 2004-09-14 Method of forming a semiconductor package and structure thereof
JP2006528047A JP4608494B2 (en) 2003-09-25 2004-09-14 Method for forming semiconductor package and structure thereof
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