WO2005048296A3 - Nanotube-based switching elements with multiple controls and circuits made from same - Google Patents
Nanotube-based switching elements with multiple controls and circuits made from same Download PDFInfo
- Publication number
- WO2005048296A3 WO2005048296A3 PCT/US2004/027455 US2004027455W WO2005048296A3 WO 2005048296 A3 WO2005048296 A3 WO 2005048296A3 US 2004027455 W US2004027455 W US 2004027455W WO 2005048296 A3 WO2005048296 A3 WO 2005048296A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nanotube
- switching elements
- output node
- multiple controls
- based switching
- Prior art date
Links
- 239000002071 nanotube Substances 0.000 title abstract 6
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/80—Interconnections, e.g. terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/17—Memory cell being a nanowire transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/021—Composite material
- H01H1/027—Composite material containing carbon particles or fibres
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/708—Integrated with dissimilar structures on a common substrate with distinct switching device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/943—Information storage or retrieval using nanostructure
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002535634A CA2535634A1 (en) | 2003-08-13 | 2004-08-12 | Nanotube-based switching elements with multiple controls and circuits made from same |
JP2006523453A JP2007502545A (en) | 2003-08-13 | 2004-08-12 | Nanotube-based exchange element with a plurality of control devices and circuit produced from said element |
EP04809611A EP1665278A4 (en) | 2003-08-13 | 2004-08-12 | Nanotube-based switching elements with multiple controls and circuits made from same |
CN200480029801.5A CN1868002B (en) | 2003-08-13 | 2004-08-12 | Nanotube-based switching elements with multiple controls and circuits made from same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49488903P | 2003-08-13 | 2003-08-13 | |
US60/494,889 | 2003-08-13 | ||
US56133004P | 2004-04-12 | 2004-04-12 | |
US60/561,330 | 2004-04-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005048296A2 WO2005048296A2 (en) | 2005-05-26 |
WO2005048296A3 true WO2005048296A3 (en) | 2006-03-30 |
Family
ID=34594565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/027455 WO2005048296A2 (en) | 2003-08-13 | 2004-08-12 | Nanotube-based switching elements with multiple controls and circuits made from same |
Country Status (7)
Country | Link |
---|---|
US (6) | US6990009B2 (en) |
EP (1) | EP1665278A4 (en) |
JP (1) | JP2007502545A (en) |
CA (1) | CA2535634A1 (en) |
HK (1) | HK1138101A1 (en) |
TW (1) | TWI355073B (en) |
WO (1) | WO2005048296A2 (en) |
Families Citing this family (130)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6835591B2 (en) * | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
US7259410B2 (en) * | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
US6706402B2 (en) * | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US6919592B2 (en) | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
US6643165B2 (en) | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
US6924538B2 (en) * | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
US7176505B2 (en) * | 2001-12-28 | 2007-02-13 | Nantero, Inc. | Electromechanical three-trace junction devices |
US6784028B2 (en) * | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
US7335395B2 (en) * | 2002-04-23 | 2008-02-26 | Nantero, Inc. | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US6933222B2 (en) * | 2003-01-02 | 2005-08-23 | Intel Corporation | Microcircuit fabrication and interconnection |
US7858185B2 (en) * | 2003-09-08 | 2010-12-28 | Nantero, Inc. | High purity nanotube fabrics and films |
US7560136B2 (en) * | 2003-01-13 | 2009-07-14 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US7666382B2 (en) | 2004-12-16 | 2010-02-23 | Nantero, Inc. | Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof |
US7294877B2 (en) | 2003-03-28 | 2007-11-13 | Nantero, Inc. | Nanotube-on-gate FET structures and applications |
EP1609188A4 (en) * | 2003-03-28 | 2007-11-07 | Nantero Inc | Nanotube-on-gate fet structures and applications |
EP1631812A4 (en) * | 2003-05-14 | 2010-12-01 | Nantero Inc | Sensor platform using a horizontally oriented nanotube element |
US7274064B2 (en) * | 2003-06-09 | 2007-09-25 | Nanatero, Inc. | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
CA2528804A1 (en) | 2003-06-09 | 2005-01-06 | Nantero, Inc | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
JP3731589B2 (en) * | 2003-07-18 | 2006-01-05 | ソニー株式会社 | Imaging device and synchronization signal generator |
US7245520B2 (en) * | 2004-08-13 | 2007-07-17 | Nantero, Inc. | Random access memory including nanotube switching elements |
US7115960B2 (en) * | 2003-08-13 | 2006-10-03 | Nantero, Inc. | Nanotube-based switching elements |
US7583526B2 (en) * | 2003-08-13 | 2009-09-01 | Nantero, Inc. | Random access memory including nanotube switching elements |
US7289357B2 (en) * | 2003-08-13 | 2007-10-30 | Nantero, Inc. | Isolation structure for deflectable nanotube elements |
WO2005017967A2 (en) | 2003-08-13 | 2005-02-24 | Nantero, Inc. | Nanotube device structure and methods of fabrication |
JP2007502545A (en) * | 2003-08-13 | 2007-02-08 | ナンテロ,インク. | Nanotube-based exchange element with a plurality of control devices and circuit produced from said element |
CN101562049B (en) * | 2003-08-13 | 2012-09-05 | 南泰若股份有限公司 | Nanotube-based switching elements with multiple controls and circuits made thereof |
US7375369B2 (en) * | 2003-09-08 | 2008-05-20 | Nantero, Inc. | Spin-coatable liquid for formation of high purity nanotube films |
US7504051B2 (en) * | 2003-09-08 | 2009-03-17 | Nantero, Inc. | Applicator liquid for use in electronic manufacturing processes |
US7528437B2 (en) * | 2004-02-11 | 2009-05-05 | Nantero, Inc. | EEPROMS using carbon nanotubes for cell storage |
US7508039B2 (en) * | 2004-05-04 | 2009-03-24 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University | Carbon nanotube (CNT) multiplexers, circuits, and actuators |
KR100620658B1 (en) * | 2004-05-17 | 2006-09-14 | 주식회사 하이닉스반도체 | Nano tube cell and cell array circuit having the nano tube cell and double bitline sensing architecture |
WO2006076037A2 (en) * | 2004-05-24 | 2006-07-20 | Trustees Of Boston University | Controllable nanomechanical memory element |
US7658869B2 (en) * | 2004-06-03 | 2010-02-09 | Nantero, Inc. | Applicator liquid containing ethyl lactate for preparation of nanotube films |
US7556746B2 (en) * | 2004-06-03 | 2009-07-07 | Nantero, Inc. | Method of making an applicator liquid for electronics fabrication process |
US7709880B2 (en) * | 2004-06-09 | 2010-05-04 | Nantero, Inc. | Field effect devices having a gate controlled via a nanotube switching element |
US7167026B2 (en) * | 2004-06-18 | 2007-01-23 | Nantero, Inc. | Tri-state circuit using nanotube switching elements |
US7330709B2 (en) * | 2004-06-18 | 2008-02-12 | Nantero, Inc. | Receiver circuit using nanotube-based switches and logic |
US7329931B2 (en) * | 2004-06-18 | 2008-02-12 | Nantero, Inc. | Receiver circuit using nanotube-based switches and transistors |
US7161403B2 (en) | 2004-06-18 | 2007-01-09 | Nantero, Inc. | Storage elements using nanotube switching elements |
US7288970B2 (en) * | 2004-06-18 | 2007-10-30 | Nantero, Inc. | Integrated nanotube and field effect switching device |
US7164744B2 (en) * | 2004-06-18 | 2007-01-16 | Nantero, Inc. | Nanotube-based logic driver circuits |
US7652342B2 (en) * | 2004-06-18 | 2010-01-26 | Nantero, Inc. | Nanotube-based transfer devices and related circuits |
WO2006121461A2 (en) * | 2004-09-16 | 2006-11-16 | Nantero, Inc. | Light emitters using nanotubes and methods of making same |
ATE463034T1 (en) * | 2004-09-22 | 2010-04-15 | Nantero Inc | RANDOM ACCESS MEMORY USING NANOTUBE SWITCHING ELEMENTS |
US20100147657A1 (en) * | 2004-11-02 | 2010-06-17 | Nantero, Inc. | Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches |
US7567414B2 (en) * | 2004-11-02 | 2009-07-28 | Nantero, Inc. | Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches |
US20060141678A1 (en) * | 2004-12-29 | 2006-06-29 | Stephen Montgomery | Forming a nanotube switch and structures formed thereby |
US8362525B2 (en) * | 2005-01-14 | 2013-01-29 | Nantero Inc. | Field effect device having a channel of nanofabric and methods of making same |
US7824946B1 (en) | 2005-03-11 | 2010-11-02 | Nantero, Inc. | Isolated metal plug process for use in fabricating carbon nanotube memory cells |
US9287356B2 (en) | 2005-05-09 | 2016-03-15 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US7835170B2 (en) | 2005-05-09 | 2010-11-16 | Nantero, Inc. | Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks |
US9911743B2 (en) | 2005-05-09 | 2018-03-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US7781862B2 (en) * | 2005-05-09 | 2010-08-24 | Nantero, Inc. | Two-terminal nanotube devices and systems and methods of making same |
US8102018B2 (en) * | 2005-05-09 | 2012-01-24 | Nantero Inc. | Nonvolatile resistive memories having scalable two-terminal nanotube switches |
US8008745B2 (en) * | 2005-05-09 | 2011-08-30 | Nantero, Inc. | Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements |
US8217490B2 (en) * | 2005-05-09 | 2012-07-10 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8183665B2 (en) | 2005-11-15 | 2012-05-22 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8013363B2 (en) * | 2005-05-09 | 2011-09-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US9196615B2 (en) * | 2005-05-09 | 2015-11-24 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8513768B2 (en) * | 2005-05-09 | 2013-08-20 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US7479654B2 (en) * | 2005-05-09 | 2009-01-20 | Nantero, Inc. | Memory arrays using nanotube articles with reprogrammable resistance |
TWI324773B (en) * | 2005-05-09 | 2010-05-11 | Nantero Inc | Non-volatile shadow latch using a nanotube switch |
US7394687B2 (en) * | 2005-05-09 | 2008-07-01 | Nantero, Inc. | Non-volatile-shadow latch using a nanotube switch |
US7782650B2 (en) * | 2005-05-09 | 2010-08-24 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US7598127B2 (en) * | 2005-05-12 | 2009-10-06 | Nantero, Inc. | Nanotube fuse structure |
US7915122B2 (en) * | 2005-06-08 | 2011-03-29 | Nantero, Inc. | Self-aligned cell integration scheme |
US7541216B2 (en) * | 2005-06-09 | 2009-06-02 | Nantero, Inc. | Method of aligning deposited nanotubes onto an etched feature using a spacer |
US7402770B2 (en) * | 2005-06-10 | 2008-07-22 | Lsi Logic Corporation | Nano structure electrode design |
US20060292716A1 (en) * | 2005-06-27 | 2006-12-28 | Lsi Logic Corporation | Use selective growth metallization to improve electrical connection between carbon nanotubes and electrodes |
US7538040B2 (en) * | 2005-06-30 | 2009-05-26 | Nantero, Inc. | Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers |
WO2007030484A2 (en) * | 2005-09-06 | 2007-03-15 | Nantero, Inc. | Nanotube fabric-based sensor systems and methods of making same |
KR100723384B1 (en) * | 2005-09-06 | 2007-05-30 | 삼성에스디아이 주식회사 | Nano wire electromechanical device and fabrication method of the same |
US7446044B2 (en) * | 2005-09-19 | 2008-11-04 | California Institute Of Technology | Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same |
JP5037804B2 (en) * | 2005-09-30 | 2012-10-03 | 富士通株式会社 | Electronic devices using vertically aligned carbon nanotubes |
US7525833B2 (en) * | 2005-10-21 | 2009-04-28 | Hewlett-Packard Development Company, L.P. | Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers |
US7885103B2 (en) | 2005-11-22 | 2011-02-08 | Agate Logic, Inc. | Non-volatile electromechanical configuration bit array |
US8063455B2 (en) * | 2005-11-22 | 2011-11-22 | Agate Logic, Inc. | Multi-terminal electromechanical nanocsopic switching device with control and release electrodes |
US7385839B2 (en) * | 2005-12-01 | 2008-06-10 | International Business Machines Corporation | Memory devices using carbon nanotube (CNT) technologies |
WO2007130919A2 (en) * | 2006-05-01 | 2007-11-15 | The Regents Of The University Of California | Nano-electro-mechanical memory cells and devices |
US7781267B2 (en) * | 2006-05-19 | 2010-08-24 | International Business Machines Corporation | Enclosed nanotube structure and method for forming |
EP2104108A1 (en) * | 2006-08-08 | 2009-09-23 | Nantero, Inc. | Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches |
GB0618045D0 (en) * | 2006-09-13 | 2006-10-25 | Cavendish Kinetics Ltd | Non-volatile memory bitcell |
WO2008039372A2 (en) * | 2006-09-22 | 2008-04-03 | Carnegie Mellon University | Assembling and applying nano-electro-mechanical systems |
KR100834829B1 (en) * | 2006-12-19 | 2008-06-03 | 삼성전자주식회사 | Multi-bit electro-mechanical memory device and method manufacturing the same |
WO2008112764A1 (en) | 2007-03-12 | 2008-09-18 | Nantero, Inc. | Electromagnetic and thermal sensors using carbon nanotubes and methods of making same |
TWI461350B (en) * | 2007-05-22 | 2014-11-21 | Nantero Inc | Triodes using nanofabric articles and methods of making the same |
US8134220B2 (en) * | 2007-06-22 | 2012-03-13 | Nantero Inc. | Two-terminal nanotube devices including a nanotube bridge and methods of making same |
US7701013B2 (en) * | 2007-07-10 | 2010-04-20 | International Business Machines Corporation | Nanoelectromechanical transistors and methods of forming same |
US7550354B2 (en) * | 2007-07-11 | 2009-06-23 | International Business Machines Corporation | Nanoelectromechanical transistors and methods of forming same |
US8065634B1 (en) | 2007-09-28 | 2011-11-22 | The Board Of Trustees Of The Leland Stanford Junior University | System and method for analyzing a nanotube logic circuit |
EP2062515B1 (en) * | 2007-11-20 | 2012-08-29 | So, Kwok Kuen | Bowl and basket assembly and salad spinner incorporating such an assembly |
US9019756B2 (en) | 2008-02-14 | 2015-04-28 | Cavendish Kinetics, Ltd | Architecture for device having cantilever electrode |
US7612270B1 (en) * | 2008-04-09 | 2009-11-03 | International Business Machines Corporation | Nanoelectromechanical digital inverter |
WO2009135017A1 (en) * | 2008-04-30 | 2009-11-05 | Cavendish Kinetics Inc. | Four-terminal multiple-time programmable memory bitcell and array architecture |
US8587989B2 (en) * | 2008-06-20 | 2013-11-19 | Nantero Inc. | NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same |
US8222127B2 (en) | 2008-07-18 | 2012-07-17 | Micron Technology, Inc. | Methods of forming structures having nanotubes extending between opposing electrodes and structures including same |
US9263126B1 (en) | 2010-09-01 | 2016-02-16 | Nantero Inc. | Method for dynamically accessing and programming resistive change element arrays |
US8357921B2 (en) | 2008-08-14 | 2013-01-22 | Nantero Inc. | Integrated three-dimensional semiconductor system comprising nonvolatile nanotube field effect transistors |
EP2329203A2 (en) * | 2008-10-02 | 2011-06-08 | Carrier Corporation | Refrigerant system with adaptive hot gas reheat |
TW201017769A (en) * | 2008-10-17 | 2010-05-01 | Univ Nat Chiao Tung | Transistor structure with suspension type nano-channel and the manufacturing method thereof |
US7915637B2 (en) | 2008-11-19 | 2011-03-29 | Nantero, Inc. | Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same |
KR101539669B1 (en) * | 2008-12-16 | 2015-07-27 | 삼성전자주식회사 | Method of forming core-shell type structure and method of manufacturing transistor using the same |
KR20100094192A (en) * | 2009-02-18 | 2010-08-26 | 삼성전자주식회사 | Static random access memory using carbon nanotube thin films |
US8253171B1 (en) | 2009-08-27 | 2012-08-28 | Lockheed Martin Corporation | Two terminal nanotube switch, memory array incorporating the same and method of making |
US8350360B1 (en) | 2009-08-28 | 2013-01-08 | Lockheed Martin Corporation | Four-terminal carbon nanotube capacitors |
US20110056812A1 (en) * | 2009-09-08 | 2011-03-10 | Kaul Anupama B | Nano-electro-mechanical switches using three-dimensional sidewall-conductive carbon nanofibers and method for making the same |
US8351239B2 (en) * | 2009-10-23 | 2013-01-08 | Nantero Inc. | Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array |
US8729412B2 (en) | 2009-11-11 | 2014-05-20 | University Of Utah Research Foundation | Nanoelectromechanical logic devices |
US8493081B2 (en) | 2009-12-08 | 2013-07-23 | Magna Closures Inc. | Wide activation angle pinch sensor section and sensor hook-on attachment principle |
US9234979B2 (en) | 2009-12-08 | 2016-01-12 | Magna Closures Inc. | Wide activation angle pinch sensor section |
US8222704B2 (en) * | 2009-12-31 | 2012-07-17 | Nantero, Inc. | Compact electrical switching devices with nanotube elements, and methods of making same |
US8435798B2 (en) * | 2010-01-13 | 2013-05-07 | California Institute Of Technology | Applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices |
US8405189B1 (en) | 2010-02-08 | 2013-03-26 | Lockheed Martin Corporation | Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors |
WO2011103558A1 (en) | 2010-02-22 | 2011-08-25 | Nantero, Inc. | Logic elements comprising carbon nanotube field effect transistor (cntfet) devices and methods of making same |
US8125824B1 (en) | 2010-09-02 | 2012-02-28 | Lockheed Martin Corporation | Nanotube random access memory (NRAM) and transistor integration |
SG180162A1 (en) | 2010-11-04 | 2012-05-30 | Agency Science Tech & Res | A switching device and a method for forming a switching device |
TWI419834B (en) * | 2011-01-10 | 2013-12-21 | Nat Univ Kaohsiung | Semiconductor device having circuit of embedded induced magnetic field used as carbon nanotube switch |
US8611137B2 (en) * | 2011-11-23 | 2013-12-17 | Altera Corporation | Memory elements with relay devices |
US8564027B2 (en) * | 2012-01-27 | 2013-10-22 | International Business Machines Corporation | Nano-devices formed with suspended graphene membrane |
US9111634B2 (en) | 2012-07-13 | 2015-08-18 | Freescale Semiconductor, Inc. | Methods and structures for multiport memory devices |
US9007732B2 (en) | 2013-03-15 | 2015-04-14 | Nantero Inc. | Electrostatic discharge protection circuits using carbon nanotube field effect transistor (CNTFET) devices and methods of making same |
US10654718B2 (en) * | 2013-09-20 | 2020-05-19 | Nantero, Inc. | Scalable nanotube fabrics and methods for making same |
EP2887354B1 (en) | 2013-12-20 | 2019-08-07 | IMEC vzw | Nano-electro-mechanical based memory |
EP2887355A1 (en) * | 2013-12-20 | 2015-06-24 | IMEC vzw | Data storage cell and memory arrangement |
CN105810750B (en) * | 2014-12-29 | 2019-02-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of carbon nanotube neuron chip and preparation method thereof |
US9299430B1 (en) | 2015-01-22 | 2016-03-29 | Nantero Inc. | Methods for reading and programming 1-R resistive change element arrays |
US9941001B2 (en) | 2016-06-07 | 2018-04-10 | Nantero, Inc. | Circuits for determining the resistive states of resistive change elements |
US9934848B2 (en) | 2016-06-07 | 2018-04-03 | Nantero, Inc. | Methods for determining the resistive states of resistive change elements |
US10748608B2 (en) * | 2018-10-12 | 2020-08-18 | At&T Intellectual Property I, L.P. | Memristive device and method based on ion migration over one or more nanowires |
CN110197829B (en) * | 2019-05-28 | 2021-06-11 | 华中科技大学 | 3D NAND flash memory device and preparation method of coated silicon nanotube thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5578976A (en) * | 1995-06-22 | 1996-11-26 | Rockwell International Corporation | Micro electromechanical RF switch |
US5677823A (en) * | 1993-05-06 | 1997-10-14 | Cavendish Kinetics Ltd. | Bi-stable memory element |
US6160230A (en) * | 1999-03-01 | 2000-12-12 | Raytheon Company | Method and apparatus for an improved single pole double throw micro-electrical mechanical switch |
US20030021966A1 (en) * | 2001-07-25 | 2003-01-30 | Segal Brent M. | Electromechanical memory array using nanotube ribbons and method for making same |
US6597048B1 (en) * | 2000-12-26 | 2003-07-22 | Cornell Research Foundation | Electrostatically charged microstructures |
Family Cites Families (135)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US725520A (en) * | 1902-08-06 | 1903-04-14 | Frederick C Weber | Method of reducing metallic oxids with metallic aluminium. |
US3332301A (en) | 1964-11-24 | 1967-07-25 | Origineers Inc | Gear drive |
US3303205A (en) | 1965-04-01 | 1967-02-07 | Merck & Co Inc | Process for introduction of a hydroxyalkyl substituent at the 17 position in steroidcompounds |
JPS51129144A (en) * | 1975-05-02 | 1976-11-10 | Toshiba Corp | Memory divice of non volatile information |
US4128773A (en) * | 1977-11-07 | 1978-12-05 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
US4460978A (en) * | 1981-11-19 | 1984-07-17 | Mostek Corporation | Nonvolatile static random access memory cell |
CH670914A5 (en) | 1986-09-10 | 1989-07-14 | Landis & Gyr Ag | |
JP2930168B2 (en) | 1992-10-09 | 1999-08-03 | シャープ株式会社 | Driving method of ferroelectric memory device |
US5682345A (en) | 1995-07-28 | 1997-10-28 | Micron Quantum Devices, Inc. | Non-volatile data storage unit method of controlling same |
US6183714B1 (en) * | 1995-09-08 | 2001-02-06 | Rice University | Method of making ropes of single-wall carbon nanotubes |
US5818748A (en) | 1995-11-21 | 1998-10-06 | International Business Machines Corporation | Chip function separation onto separate stacked chips |
US6445006B1 (en) * | 1995-12-20 | 2002-09-03 | Advanced Technology Materials, Inc. | Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same |
US6122191A (en) * | 1996-05-01 | 2000-09-19 | Cypress Semiconductor Corporation | Semiconductor non-volatile device including embedded non-volatile elements |
US6809462B2 (en) | 2000-04-05 | 2004-10-26 | Sri International | Electroactive polymer sensors |
US6159620A (en) * | 1997-03-31 | 2000-12-12 | The Regents Of The University Of California | Single-electron solid state electronic device |
US6011744A (en) | 1997-07-16 | 2000-01-04 | Altera Corporation | Programmable logic device with multi-port memory |
US6221330B1 (en) * | 1997-08-04 | 2001-04-24 | Hyperion Catalysis International Inc. | Process for producing single wall nanotubes using unsupported metal catalysts |
ATA119098A (en) | 1998-07-09 | 1999-05-15 | Ims Ionen Mikrofab Syst | METHOD FOR PRODUCING A CARBON FILM ON A SUBSTRATE |
US6097243A (en) | 1998-07-21 | 2000-08-01 | International Business Machines Corporation | Device and method to reduce power consumption in integrated semiconductor devices using a low power groggy mode |
US6097241A (en) | 1998-07-21 | 2000-08-01 | International Business Machines Corporation | ASIC low power activity detector to change threshold voltage |
US6346189B1 (en) | 1998-08-14 | 2002-02-12 | The Board Of Trustees Of The Leland Stanford Junior University | Carbon nanotube structures made using catalyst islands |
US7416699B2 (en) * | 1998-08-14 | 2008-08-26 | The Board Of Trustees Of The Leland Stanford Junior University | Carbon nanotube devices |
US6232706B1 (en) * | 1998-11-12 | 2001-05-15 | The Board Of Trustees Of The Leland Stanford Junior University | Self-oriented bundles of carbon nanotubes and method of making same |
US6472705B1 (en) * | 1998-11-18 | 2002-10-29 | International Business Machines Corporation | Molecular memory & logic |
US6250984B1 (en) * | 1999-01-25 | 2001-06-26 | Agere Systems Guardian Corp. | Article comprising enhanced nanotube emitter structure and process for fabricating article |
DE60028343T2 (en) | 1999-02-12 | 2007-05-24 | Board Of Trustees Operating Michigan State University, East Lansing | NANO CAPSULES WITH LOADED PARTICLES, THEIR USE AND METHOD FOR THEIR MANUFACTURE |
US6314019B1 (en) * | 1999-03-29 | 2001-11-06 | Hewlett-Packard Company | Molecular-wire crossbar interconnect (MWCI) for signal routing and communications |
US6518156B1 (en) * | 1999-03-29 | 2003-02-11 | Hewlett-Packard Company | Configurable nanoscale crossbar electronic circuits made by electrochemical reaction |
US7030408B1 (en) * | 1999-03-29 | 2006-04-18 | Hewlett-Packard Development Company, L.P. | Molecular wire transistor (MWT) |
US6128214A (en) * | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
US6256767B1 (en) * | 1999-03-29 | 2001-07-03 | Hewlett-Packard Company | Demultiplexer for a molecular wire crossbar network (MWCN DEMUX) |
US6345362B1 (en) | 1999-04-06 | 2002-02-05 | International Business Machines Corporation | Managing Vt for reduced power using a status table |
EP2239794A3 (en) * | 1999-07-02 | 2011-03-23 | President and Fellows of Harvard College | Nanoscopic wire-based devices, arrays, and methods of their manufacture |
US6198655B1 (en) * | 1999-12-10 | 2001-03-06 | The Regents Of The University Of California | Electrically addressable volatile non-volatile molecular-based switching devices |
EP1247089B1 (en) | 1999-12-15 | 2008-07-23 | Board Of Trustees Of The Leland Stanford Junior University | Carbon nanotube devices |
US6346846B1 (en) | 1999-12-17 | 2002-02-12 | International Business Machines Corporation | Methods and apparatus for blowing and sensing antifuses |
JP3572329B2 (en) | 1999-12-22 | 2004-09-29 | エルピーダメモリ株式会社 | A data latch circuit and an operation method of the data latch circuit. |
US6625740B1 (en) | 2000-01-13 | 2003-09-23 | Cirrus Logic, Inc. | Dynamically activating and deactivating selected circuit blocks of a data processing integrated circuit during execution of instructions according to power code bits appended to selected instructions |
US7335603B2 (en) * | 2000-02-07 | 2008-02-26 | Vladimir Mancevski | System and method for fabricating logic devices comprising carbon nanotube transistors |
US7139743B2 (en) * | 2000-04-07 | 2006-11-21 | Washington University | Associative database scanning and information retrieval using FPGA devices |
EP1170799A3 (en) | 2000-07-04 | 2009-04-01 | Infineon Technologies AG | Electronic device and method of manufacture of an electronic device |
CN1251962C (en) * | 2000-07-18 | 2006-04-19 | Lg电子株式会社 | Method of horizontal growth of carbon nanotube and field effect transistor using carbon nanotube |
KR100862131B1 (en) * | 2000-08-22 | 2008-10-09 | 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 | Semiconductor nanowires manufacturing method |
US6376787B1 (en) | 2000-08-24 | 2002-04-23 | Texas Instruments Incorporated | Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer |
WO2002032682A1 (en) * | 2000-10-19 | 2002-04-25 | Brother Kogyo Kabushiki Kaisha | Tape cassette and tape unit |
US6504118B2 (en) | 2000-10-27 | 2003-01-07 | Daniel J Hyman | Microfabricated double-throw relay with multimorph actuator and electrostatic latch mechanism |
US6548841B2 (en) * | 2000-11-09 | 2003-04-15 | Texas Instruments Incorporated | Nanomechanical switches and circuits |
JP3587248B2 (en) | 2000-12-20 | 2004-11-10 | 日本電気株式会社 | Scan flip-flops |
JP2002203768A (en) | 2000-12-28 | 2002-07-19 | Toshiba Corp | Exposure method, exposure system and recording medium |
US6625047B2 (en) | 2000-12-31 | 2003-09-23 | Texas Instruments Incorporated | Micromechanical memory element |
US6423583B1 (en) | 2001-01-03 | 2002-07-23 | International Business Machines Corporation | Methodology for electrically induced selective breakdown of nanotubes |
WO2002079514A1 (en) * | 2001-01-10 | 2002-10-10 | The Trustees Of Boston College | Dna-bridged carbon nanotube arrays |
US6373771B1 (en) | 2001-01-17 | 2002-04-16 | International Business Machines Corporation | Integrated fuse latch and shift register for efficient programming and fuse readout |
US6803840B2 (en) * | 2001-03-30 | 2004-10-12 | California Institute Of Technology | Pattern-aligned carbon nanotube growth and tunable resonator apparatus |
US6777982B2 (en) * | 2001-04-03 | 2004-08-17 | Carnegie Mellon University | Molecular scale latch and associated clocking scheme to provide gain, memory and I/O isolation |
US6426687B1 (en) | 2001-05-22 | 2002-07-30 | The Aerospace Corporation | RF MEMS switch |
US6673424B1 (en) * | 2001-06-19 | 2004-01-06 | Arizona Board Of Regents | Devices based on molecular electronics |
JP2003017074A (en) | 2001-07-02 | 2003-01-17 | Honda Motor Co Ltd | Fuel cell |
WO2004065671A1 (en) | 2003-01-13 | 2004-08-05 | Nantero, Inc. | Carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US6911682B2 (en) | 2001-12-28 | 2005-06-28 | Nantero, Inc. | Electromechanical three-trace junction devices |
US6835591B2 (en) | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
US6574130B2 (en) | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
WO2004065657A1 (en) | 2003-01-13 | 2004-08-05 | Nantero, Inc. | Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US6643165B2 (en) | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
US6924538B2 (en) * | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
US7259410B2 (en) * | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US6884734B2 (en) | 2001-11-20 | 2005-04-26 | International Business Machines Corporation | Vapor phase etch trim structure with top etch blocking layer |
US6835613B2 (en) | 2001-12-06 | 2004-12-28 | University Of South Florida | Method of producing an integrated circuit with a carbon nanotube |
US7176505B2 (en) * | 2001-12-28 | 2007-02-13 | Nantero, Inc. | Electromechanical three-trace junction devices |
US6784028B2 (en) * | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
EP1468423A2 (en) | 2002-01-18 | 2004-10-20 | California Institute Of Technology | Array-based architecture for molecular electronics |
EP1341184B1 (en) | 2002-02-09 | 2005-09-14 | Samsung Electronics Co., Ltd. | Memory device utilizing carbon nanotubes and method of fabricating the memory device |
US6889216B2 (en) | 2002-03-12 | 2005-05-03 | Knowm Tech, Llc | Physical neural network design incorporating nanotechnology |
US7049625B2 (en) | 2002-03-18 | 2006-05-23 | Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. | Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell |
SE0200868D0 (en) * | 2002-03-20 | 2002-03-20 | Chalmers Technology Licensing | Theoretical model for a nanorelay and same relay |
US6946410B2 (en) | 2002-04-05 | 2005-09-20 | E. I. Du Pont De Nemours And Company | Method for providing nano-structures of uniform length |
US6760245B2 (en) | 2002-05-01 | 2004-07-06 | Hewlett-Packard Development Company, L.P. | Molecular wire crossbar flash memory |
WO2003099709A2 (en) | 2002-05-21 | 2003-12-04 | Eikos, Inc. | Method for patterning carbon nanotube coating and carbon nanotube wiring |
US6794914B2 (en) | 2002-05-24 | 2004-09-21 | Qualcomm Incorporated | Non-volatile multi-threshold CMOS latch with leakage control |
US6759693B2 (en) * | 2002-06-19 | 2004-07-06 | Nantero, Inc. | Nanotube permeable base transistor |
US6774052B2 (en) * | 2002-06-19 | 2004-08-10 | Nantero, Inc. | Method of making nanotube permeable base transistor |
TWI282092B (en) | 2002-06-28 | 2007-06-01 | Brilliance Semiconductor Inc | Nonvolatile static random access memory cell |
JP4338948B2 (en) | 2002-08-01 | 2009-10-07 | 株式会社半導体エネルギー研究所 | Method for producing carbon nanotube semiconductor device |
JP4004891B2 (en) * | 2002-08-19 | 2007-11-07 | 富士フイルム株式会社 | CCD type solid-state imaging device |
US6809465B2 (en) * | 2002-08-23 | 2004-10-26 | Samsung Electronics Co., Ltd. | Article comprising MEMS-based two-dimensional e-beam sources and method for making the same |
JP4547852B2 (en) | 2002-09-04 | 2010-09-22 | 富士ゼロックス株式会社 | Manufacturing method of electrical parts |
US7051945B2 (en) * | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
JP3906139B2 (en) | 2002-10-16 | 2007-04-18 | 株式会社東芝 | Magnetic random access memory |
US20040087162A1 (en) | 2002-10-17 | 2004-05-06 | Nantero, Inc. | Metal sacrificial layer |
US20040075159A1 (en) | 2002-10-17 | 2004-04-22 | Nantero, Inc. | Nanoscopic tunnel |
US20040077107A1 (en) | 2002-10-17 | 2004-04-22 | Nantero, Inc. | Method of making nanoscopic tunnel |
WO2005000739A1 (en) * | 2002-10-29 | 2005-01-06 | President And Fellows Of Harvard College | Carbon nanotube device fabrication |
AU2003298716A1 (en) | 2002-11-27 | 2004-06-23 | Molecular Nanosystems, Inc. | Nanotube chemical sensor based on work function of electrodes |
US7858185B2 (en) * | 2003-09-08 | 2010-12-28 | Nantero, Inc. | High purity nanotube fabrics and films |
US7666382B2 (en) * | 2004-12-16 | 2010-02-23 | Nantero, Inc. | Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof |
CN1720345A (en) | 2003-01-13 | 2006-01-11 | 南泰若股份有限公司 | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
DE10301480B4 (en) | 2003-01-16 | 2006-04-20 | Infineon Technologies Ag | Method of making semiconductor device pins |
US6919740B2 (en) | 2003-01-31 | 2005-07-19 | Hewlett-Packard Development Company, Lp. | Molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits, and more complex circuits composed, in part, from molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits |
US6918284B2 (en) | 2003-03-24 | 2005-07-19 | The United States Of America As Represented By The Secretary Of The Navy | Interconnected networks of single-walled carbon nanotubes |
US6944054B2 (en) * | 2003-03-28 | 2005-09-13 | Nantero, Inc. | NRAM bit selectable two-device nanotube array |
US7075141B2 (en) * | 2003-03-28 | 2006-07-11 | Nantero, Inc. | Four terminal non-volatile transistor device |
US7113426B2 (en) * | 2003-03-28 | 2006-09-26 | Nantero, Inc. | Non-volatile RAM cell and array using nanotube switch position for information state |
US7294877B2 (en) * | 2003-03-28 | 2007-11-13 | Nantero, Inc. | Nanotube-on-gate FET structures and applications |
US6958665B2 (en) * | 2003-04-02 | 2005-10-25 | Raytheon Company | Micro electro-mechanical system (MEMS) phase shifter |
US6995046B2 (en) * | 2003-04-22 | 2006-02-07 | Nantero, Inc. | Process for making byte erasable devices having elements made with nanotubes |
US7045421B2 (en) * | 2003-04-22 | 2006-05-16 | Nantero, Inc. | Process for making bit selectable devices having elements made with nanotubes |
EP1631812A4 (en) * | 2003-05-14 | 2010-12-01 | Nantero Inc | Sensor platform using a horizontally oriented nanotube element |
US20040238907A1 (en) | 2003-06-02 | 2004-12-02 | Pinkerton Joseph F. | Nanoelectromechanical transistors and switch systems |
CA2528804A1 (en) * | 2003-06-09 | 2005-01-06 | Nantero, Inc | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
US7115960B2 (en) * | 2003-08-13 | 2006-10-03 | Nantero, Inc. | Nanotube-based switching elements |
JP2007502545A (en) * | 2003-08-13 | 2007-02-08 | ナンテロ,インク. | Nanotube-based exchange element with a plurality of control devices and circuit produced from said element |
CN101562049B (en) * | 2003-08-13 | 2012-09-05 | 南泰若股份有限公司 | Nanotube-based switching elements with multiple controls and circuits made thereof |
WO2005017967A2 (en) * | 2003-08-13 | 2005-02-24 | Nantero, Inc. | Nanotube device structure and methods of fabrication |
US7245520B2 (en) * | 2004-08-13 | 2007-07-17 | Nantero, Inc. | Random access memory including nanotube switching elements |
US7289357B2 (en) * | 2003-08-13 | 2007-10-30 | Nantero, Inc. | Isolation structure for deflectable nanotube elements |
US20050035369A1 (en) * | 2003-08-15 | 2005-02-17 | Chun-Chieh Lin | Structure and method of forming integrated circuits utilizing strained channel transistors |
US7375369B2 (en) * | 2003-09-08 | 2008-05-20 | Nantero, Inc. | Spin-coatable liquid for formation of high purity nanotube films |
US20050052894A1 (en) * | 2003-09-09 | 2005-03-10 | Nantero, Inc. | Uses of nanofabric-based electro-mechanical switches |
US6969651B1 (en) | 2004-03-26 | 2005-11-29 | Lsi Logic Corporation | Layout design and process to form nanotube cell for nanotube memory applications |
US7658869B2 (en) * | 2004-06-03 | 2010-02-09 | Nantero, Inc. | Applicator liquid containing ethyl lactate for preparation of nanotube films |
US7164744B2 (en) * | 2004-06-18 | 2007-01-16 | Nantero, Inc. | Nanotube-based logic driver circuits |
US7288970B2 (en) * | 2004-06-18 | 2007-10-30 | Nantero, Inc. | Integrated nanotube and field effect switching device |
US7167026B2 (en) * | 2004-06-18 | 2007-01-23 | Nantero, Inc. | Tri-state circuit using nanotube switching elements |
US7652342B2 (en) * | 2004-06-18 | 2010-01-26 | Nantero, Inc. | Nanotube-based transfer devices and related circuits |
US7161403B2 (en) * | 2004-06-18 | 2007-01-09 | Nantero, Inc. | Storage elements using nanotube switching elements |
US7330709B2 (en) * | 2004-06-18 | 2008-02-12 | Nantero, Inc. | Receiver circuit using nanotube-based switches and logic |
US7329931B2 (en) * | 2004-06-18 | 2008-02-12 | Nantero, Inc. | Receiver circuit using nanotube-based switches and transistors |
US6955937B1 (en) | 2004-08-12 | 2005-10-18 | Lsi Logic Corporation | Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell |
US7567414B2 (en) * | 2004-11-02 | 2009-07-28 | Nantero, Inc. | Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches |
US7598544B2 (en) * | 2005-01-14 | 2009-10-06 | Nanotero, Inc. | Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same |
US8362525B2 (en) * | 2005-01-14 | 2013-01-29 | Nantero Inc. | Field effect device having a channel of nanofabric and methods of making same |
US20060276056A1 (en) * | 2005-04-05 | 2006-12-07 | Nantero, Inc. | Nanotube articles with adjustable electrical conductivity and methods of making the same |
US7479654B2 (en) * | 2005-05-09 | 2009-01-20 | Nantero, Inc. | Memory arrays using nanotube articles with reprogrammable resistance |
US7394687B2 (en) * | 2005-05-09 | 2008-07-01 | Nantero, Inc. | Non-volatile-shadow latch using a nanotube switch |
-
2004
- 2004-08-12 JP JP2006523453A patent/JP2007502545A/en not_active Ceased
- 2004-08-12 WO PCT/US2004/027455 patent/WO2005048296A2/en active Application Filing
- 2004-08-12 EP EP04809611A patent/EP1665278A4/en not_active Withdrawn
- 2004-08-12 CA CA002535634A patent/CA2535634A1/en not_active Abandoned
- 2004-08-13 US US10/918,085 patent/US6990009B2/en not_active Expired - Fee Related
- 2004-08-13 US US10/917,932 patent/US20050035786A1/en not_active Abandoned
- 2004-08-13 TW TW093124279A patent/TWI355073B/en active
-
2005
- 2005-08-04 US US11/197,196 patent/US7339401B2/en active Active
-
2008
- 2008-01-09 US US11/971,476 patent/US7542334B2/en active Active
- 2008-10-06 US US12/246,009 patent/US7782652B2/en active Active
- 2008-10-06 US US12/246,013 patent/US7710157B2/en active Active
-
2010
- 2010-04-21 HK HK10103906.5A patent/HK1138101A1/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5677823A (en) * | 1993-05-06 | 1997-10-14 | Cavendish Kinetics Ltd. | Bi-stable memory element |
US5578976A (en) * | 1995-06-22 | 1996-11-26 | Rockwell International Corporation | Micro electromechanical RF switch |
US6160230A (en) * | 1999-03-01 | 2000-12-12 | Raytheon Company | Method and apparatus for an improved single pole double throw micro-electrical mechanical switch |
US6597048B1 (en) * | 2000-12-26 | 2003-07-22 | Cornell Research Foundation | Electrostatically charged microstructures |
US20030021966A1 (en) * | 2001-07-25 | 2003-01-30 | Segal Brent M. | Electromechanical memory array using nanotube ribbons and method for making same |
Non-Patent Citations (4)
Title |
---|
CHOI ET AL: "Carbon-nanotube-based nonvolatile memory with oxide-nitride-oxide film and nanoscale channel", APPLIED PHYSICS LETTERS, vol. 82, no. 2, 13 January 2003 (2003-01-13), pages 275 - 277, XP012034087 * |
DEQUESNES ET AL: "Calculation of pull-in voltages for carbon-nanotube-based nanoelectromechanical switches", NANOTECHNOLOGY, vol. 13, 22 January 2002 (2002-01-22), pages 120 - 131, XP002298965 * |
KINARET ET AL: "A carbon-nanotube-based nanorelay", APPLIED PHYSICS LETTERS, vol. 82, no. 8, 24 February 2003 (2003-02-24), pages 1287 - 1289, XP001162338 * |
RUECKES ET AL: "Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing", SCIENCE, vol. 289, no. 5476, 7 July 2000 (2000-07-07), pages 94 - 97, XP000925696 * |
Also Published As
Publication number | Publication date |
---|---|
JP2007502545A (en) | 2007-02-08 |
TW200515597A (en) | 2005-05-01 |
US20050035786A1 (en) | 2005-02-17 |
US7339401B2 (en) | 2008-03-04 |
EP1665278A2 (en) | 2006-06-07 |
EP1665278A4 (en) | 2007-11-07 |
HK1138101A1 (en) | 2010-08-13 |
US20050270824A1 (en) | 2005-12-08 |
US7710157B2 (en) | 2010-05-04 |
US20100073031A1 (en) | 2010-03-25 |
US6990009B2 (en) | 2006-01-24 |
US7542334B2 (en) | 2009-06-02 |
US20050036365A1 (en) | 2005-02-17 |
US7782652B2 (en) | 2010-08-24 |
US20080186756A1 (en) | 2008-08-07 |
CA2535634A1 (en) | 2005-05-26 |
WO2005048296A2 (en) | 2005-05-26 |
US20090091352A1 (en) | 2009-04-09 |
TWI355073B (en) | 2011-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005048296A3 (en) | Nanotube-based switching elements with multiple controls and circuits made from same | |
WO2005084164A3 (en) | Nanotube-based switching elements and logic circuits | |
WO2006033681A3 (en) | Receiver circuit using nanotube-based switches and logic | |
Kvatinsky et al. | MRL—Memristor ratioed logic | |
WO2006007196A3 (en) | Nanotube-based transfer devices and related circuits | |
Wu et al. | Strain‐gated piezotronic logic nanodevices | |
WO2006033683A3 (en) | Receiver circuit using nanotube-based switches and transistors | |
ATE419676T1 (en) | SWITCHING DEVICE WITH INTEGRATED NANOTUBE AND FIELD EFFECT TECHNOLOGY | |
US8669785B2 (en) | Logic circuits using neuristors | |
JP4618164B2 (en) | Switch circuit | |
KR20090113035A (en) | Convertible logic circuit comprising carbon natube transistor having ambipolar charateristic | |
JP6245171B2 (en) | Semiconductor device and programming method | |
EP1594176A4 (en) | Switching device | |
CN108292916A (en) | Output circuit | |
JP2001312893A5 (en) | ||
WO1999003204A1 (en) | Sr flip flop | |
Jeong et al. | Performance of single-electron transistor logic composed of multi-gate single-electron transistors | |
CN108336991A (en) | Level shift circuit | |
CN109660236A (en) | Hysteresis circuitry and its composition electrification reset structure | |
CN103795396A (en) | Circuit structure for eliminating short circuit currents | |
KR102119470B1 (en) | Operating method for electromechanical switching device | |
JP2008099287A (en) | Magnetic transistor circuit representing data '0' and '1' of binary system | |
WO2011002612A3 (en) | Circuit structure and method for programming and re-programming a low power, multiple states, electronic fuse(e-fuse) | |
Sikder et al. | Design optimization study of reconfigurable interconnects | |
CN105634446B (en) | A kind of non-volatile set-reset flip-floop circuit based on memristor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200480029801.5 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DPEN | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101) | ||
ENP | Entry into the national phase |
Ref document number: 2535634 Country of ref document: CA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006523453 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004809611 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2004809611 Country of ref document: EP |