WO2005048262A3 - Mram architecture with a flux closed data storage layer - Google Patents

Mram architecture with a flux closed data storage layer Download PDF

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Publication number
WO2005048262A3
WO2005048262A3 PCT/US2004/005874 US2004005874W WO2005048262A3 WO 2005048262 A3 WO2005048262 A3 WO 2005048262A3 US 2004005874 W US2004005874 W US 2004005874W WO 2005048262 A3 WO2005048262 A3 WO 2005048262A3
Authority
WO
WIPO (PCT)
Prior art keywords
data storage
storage layer
memory cells
magnetic
magnetic memory
Prior art date
Application number
PCT/US2004/005874
Other languages
French (fr)
Other versions
WO2005048262A2 (en
Inventor
David Tsang
Robert Paul Morris
Original Assignee
Applied Spintronics Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Spintronics Tech Inc filed Critical Applied Spintronics Tech Inc
Publication of WO2005048262A2 publication Critical patent/WO2005048262A2/en
Publication of WO2005048262A3 publication Critical patent/WO2005048262A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Abstract

A method and system for providing and using a magnetic memory are disclosed. The method and system` include providing a plurality of magnetic memory cells (11) and providing at least one magnetic write line (82) coupled with the plurality of magnetic memory cells (11). Each of the magnetic memory cells (11) includes a magnetic element (110) having a data storage layer (1103). The data storage layer stores data magnetically. The magnetic write lines are magnetostatically coupled with at least the data storage layer (1103) of the magnetic element (11) of the corresponding magnetic memory cells (11). Consequently, flux closure is substantially achieved for the data storage layer of each of the plurality of magnetic memory cells (11).
PCT/US2004/005874 2003-10-16 2004-02-27 Mram architecture with a flux closed data storage layer WO2005048262A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/688,664 2003-10-16
US10/688,664 US6909633B2 (en) 2002-12-09 2003-10-16 MRAM architecture with a flux closed data storage layer

Publications (2)

Publication Number Publication Date
WO2005048262A2 WO2005048262A2 (en) 2005-05-26
WO2005048262A3 true WO2005048262A3 (en) 2005-08-04

Family

ID=34590648

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/005874 WO2005048262A2 (en) 2003-10-16 2004-02-27 Mram architecture with a flux closed data storage layer

Country Status (2)

Country Link
US (1) US6909633B2 (en)
WO (1) WO2005048262A2 (en)

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US7528457B2 (en) * 2006-04-14 2009-05-05 Magic Technologies, Inc. Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R
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US7855911B2 (en) * 2008-05-23 2010-12-21 Seagate Technology Llc Reconfigurable magnetic logic device using spin torque
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US7881098B2 (en) 2008-08-26 2011-02-01 Seagate Technology Llc Memory with separate read and write paths
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US8039913B2 (en) * 2008-10-09 2011-10-18 Seagate Technology Llc Magnetic stack with laminated layer
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US20100102405A1 (en) * 2008-10-27 2010-04-29 Seagate Technology Llc St-ram employing a spin filter
US8045366B2 (en) 2008-11-05 2011-10-25 Seagate Technology Llc STRAM with composite free magnetic element
US8043732B2 (en) 2008-11-11 2011-10-25 Seagate Technology Llc Memory cell with radial barrier
US7826181B2 (en) * 2008-11-12 2010-11-02 Seagate Technology Llc Magnetic memory with porous non-conductive current confinement layer
US8289756B2 (en) 2008-11-25 2012-10-16 Seagate Technology Llc Non volatile memory including stabilizing structures
US7826259B2 (en) * 2009-01-29 2010-11-02 Seagate Technology Llc Staggered STRAM cell
US7999338B2 (en) 2009-07-13 2011-08-16 Seagate Technology Llc Magnetic stack having reference layers with orthogonal magnetization orientation directions
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KR20120056019A (en) * 2010-11-24 2012-06-01 삼성전자주식회사 Oscillator and methods of manufacturing and operating the same
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US9123884B2 (en) * 2011-09-22 2015-09-01 Agency For Science, Technology And Research Magnetoresistive device and a writing method for a magnetoresistive device
KR101683440B1 (en) * 2015-05-13 2016-12-07 고려대학교 산학협력단 Magnetic memory device
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US6740947B1 (en) * 2002-11-13 2004-05-25 Hewlett-Packard Development Company, L.P. MRAM with asymmetric cladded conductor

Also Published As

Publication number Publication date
US20040130929A1 (en) 2004-07-08
WO2005048262A2 (en) 2005-05-26
US6909633B2 (en) 2005-06-21

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