WO2005045871A1 - Field emission device with coating layer and method for fabricating the same - Google Patents

Field emission device with coating layer and method for fabricating the same Download PDF

Info

Publication number
WO2005045871A1
WO2005045871A1 PCT/KR2004/002898 KR2004002898W WO2005045871A1 WO 2005045871 A1 WO2005045871 A1 WO 2005045871A1 KR 2004002898 W KR2004002898 W KR 2004002898W WO 2005045871 A1 WO2005045871 A1 WO 2005045871A1
Authority
WO
WIPO (PCT)
Prior art keywords
coating layer
field emission
emission device
nano tube
carbon nano
Prior art date
Application number
PCT/KR2004/002898
Other languages
French (fr)
Inventor
Gwang Bai Kim
Yang Woon Na
Original Assignee
Iljin Diamond Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iljin Diamond Co., Ltd filed Critical Iljin Diamond Co., Ltd
Publication of WO2005045871A1 publication Critical patent/WO2005045871A1/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/304Field-emissive cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30446Field emission cathodes characterised by the emitter material
    • H01J2201/30453Carbon types
    • H01J2201/30469Carbon nanotubes (CNTs)

Definitions

  • the present invention relates to a field emission device provided in a display device or the like and used as an electron emission source, and more particularly, to a field emission device with a coating layer which is capable of improving the low voltage operation and the emission characteristics by coating a carbonaceous matter on a carbon nano tube, and a method for fabricating the same.
  • a field emission device is used as an electron emission source of a display device, a lighting device, a backlight unit, etc.
  • This field emission device is a display device in which, if a strong electric field is formed in an emitter, cold electrons are emitted, move in vacuum, and collide with a fluorescent film, thereby, an Image is formed by lighting a fluorescent substance.
  • the method of forming a carbon nano tube on a substrate for the purpose of improving the field emission characteristics using a physically and chemically stable carbon nano tube.
  • the method of forming a carbon nano tube includes the method of directly growing a carbon nano tube on a substrate using chemical vapor depcsition(CVD) and the method of screen printing using a paste.
  • the degree of vacuum in the panel(chamber) of a field emission device is gradually decreased with the passage of time, and ionized ions, which ionized by collision with residual gases, sputter (ion collision) an electron emission source and an outgassing occurs, thereby the device is damaged and the life span is reduced.
  • a getter is mounted to remove residual gases, but the aforementioned problem still exists.
  • an object of the present invention is to provide a field emission device with a coating layer which is capable of improving the low voltage operation and the emission characteristics by coating amorphous diamond on a carbon nano tube, and a method of making the same.
  • a field emission device with a coating layer according to the present invention wherein the coating layer is formed on the outer surface of a carbon nano tube.
  • the coating layer is formed by preserving carbon containing methane or ethylene for 10 to 60 minutes under a pressure of 40 to 70 Torr in a hydrogen atmosphere in the temperature range from 200 to 500JJEC, with a carbon nano tube to be coated being housed in a coating apparatus.
  • FIG. 1 is a view showing a frame format of a field emission device according to the present invention
  • Fig. 2 is a SEM photograph of the field emission device according to the present invention
  • Fig. 3 is a graph comparatively showing the field emission characteristics of the field emission device according to the present invention
  • Fig. 4 is a photograph comparatively showing a field emission image of the field emission device according to the present invention.
  • FIG. 1 is a view showing a frame format of a field emission device according to the present invention.
  • Fig. 2 is a SEM photograph of the field emission device according to the present invention.
  • Fig. 3 is a graph comparatively showing the field emission characteristics of the field emission device according to the present invention.
  • Fig. 4 is a photograph comparatively showing a field emission image of the field emission device according to the present invention characteristic of a coating layer 20 formed on the outer surface of a carbon nano tube 10.
  • the present invention is to minimize the damage caused by arcing at a high voltage and reduce the work function of electrons to make an electron emission easier by forming a coating layer 20 on the outer surface of a carbon nano tube IQ preferably at the end thereof.
  • the coating layer 20 is a material having the characteristics such as electron affinity, chemical stability, thermal stability, and high hardness, etc. It is preferable that the coating layer 20 is made of a carbonaceous matter having a lower work function, such as amorphous diamond, diamond like carbon, carbon fiber, boron nitride, aluminum nitride, gallium nitride, graphite or the like, individually or in a combination thereof.
  • a carbonaceous matter having a lower work function such as amorphous diamond, diamond like carbon, carbon fiber, boron nitride, aluminum nitride, gallium nitride, graphite or the like, individually or in a combination thereof.
  • the method of coating the coating layer 2Q sputtering electron beam or laser deposition, chemical vapor deposition, cathodic arc deposition or the like is suitable.
  • the thickness of the coating layer 20 is preferably 1 to lOnm.
  • This range is set in view of the geometrical shape of an electron emission source.
  • Amorphous diamond (work function: l ⁇ 3eV) is coated on the surface of an emitter at a thickness from 1 to lOnm by preserving for 10 to 60 minutes under a pressure of 40 to 70 Torr in a hydrogen atmosphere and a gas (hydrogen content: 0.1 ⁇ 0.5 wt%) contained carbon, such as methane or ethylene, with a coating apparatus set to the temperature range between 200 and 500JJEC.
  • a coating layer 20 is formed at the end of a carbon nano tube 10 and mounted or printed on a display device (not shown), and then if a voltage more than a predetermined level (threshold voltage: turn on voltage) is applied to the display device, an electric field is formed around the tip, whereby electrons start being emitted from the carbon nano tube 10.
  • a voltage more than a predetermined level threshold voltage: turn on voltage
  • Fig. 2 shows a comparison of SEM photographs of the prior art and the present invention.
  • the diameter (??) of the carbon nano tube is 1 to 5nm, and the diameter (??) of the carbon particle is 60 to 70nm, while in the present invention (where a coating layer is formed) the diameter (??) of the carbon nano tube is 10 to 20nm.
  • the diameter (??) of the carbon nano tube of this invention has grown at least twice larger as compared to the comparative example.
  • Fig. 3 is a graph showing the field emission characteristics of the prior art and of the present invention. It can be seen that in the comparative example (where no coating layer is formed), the threshold voltage (turn on voltage) is about 2 V/um, while in the present invention the threshold voltage has reduced to about 1.5 V/um.
  • the emission current of this invention has become better about twice or more at the same voltage as compared to the comparative example, and there is hardly any damage caused by arching even at a high voltage (more than 3kV).
  • FIG. 4 is a view comparatively showing field emission images of the prior art and of the present invention.
  • the coating layer 20 coated on the carbon nano tube 10 is formed of material having a low work function to thus increase the field electron emission efficiency and the coating layer 20 is overally uniformly coated.
  • a coating layer is formed on the outer surface of a carbon nano tube to thus prevent the damage of the carbon nano tube caused by arching.

Abstract

The present invention discloses a field emission device which is printed on a display device or the like and used as an electron emission source. A carbonaceous coating layer is formed on the outer surface of a carbon nano tube to thus prevent the damage of the carbon nano tube caused by arching. By this, the emission characteristics of the field emission device are improved, the life span thereof is lengthened, and the current density of the field emission device is relatively increased to thus improve the brightness.

Description

Description FIELD EMISSION DEVICE WITH COATING LAYER AND METHOD FOR FABRICATING THE SAME
[1] Technical Field
[2] The present invention relates to a field emission device provided in a display device or the like and used as an electron emission source, and more particularly, to a field emission device with a coating layer which is capable of improving the low voltage operation and the emission characteristics by coating a carbonaceous matter on a carbon nano tube, and a method for fabricating the same.
[3] Background Art
[4] Generally, a field emission device is used as an electron emission source of a display device, a lighting device, a backlight unit, etc. This field emission device is a display device in which, if a strong electric field is formed in an emitter, cold electrons are emitted, move in vacuum, and collide with a fluorescent film, thereby, an Image is formed by lighting a fluorescent substance.
[5] In the conventional field emission device, there is a possibility that residual gas particles in vacuum may be ionized by collision with electrons and gas ions may collide with a micro-tip and damage it. Besides, there is a drawback that the life span and performance of the field emission device is deteriorated since fluorescent particles fall off and pollute the micro-tip.
[6] Therefore, as means for solving the drawback of the field emission device, proposed was the method of forming a carbon nano tube on a substrate for the purpose of improving the field emission characteristics using a physically and chemically stable carbon nano tube. Especially, the method of forming a carbon nano tube includes the method of directly growing a carbon nano tube on a substrate using chemical vapor depcsition(CVD) and the method of screen printing using a paste.
[7] By the way, the degree of vacuum in the panel(chamber) of a field emission device is gradually decreased with the passage of time, and ionized ions, which ionized by collision with residual gases, sputter (ion collision) an electron emission source and an outgassing occurs, thereby the device is damaged and the life span is reduced. Thus, in order to prevent such a deterioration of the degree of vacuum, a getter is mounted to remove residual gases, but the aforementioned problem still exists.
[8] Disclosure of the Invention
[9] Therefore, an object of the present invention is to provide a field emission device with a coating layer which is capable of improving the low voltage operation and the emission characteristics by coating amorphous diamond on a carbon nano tube, and a method of making the same. [10] To achieve the above object, there is provided a field emission device with a coating layer according to the present invention, wherein the coating layer is formed on the outer surface of a carbon nano tube. [11] Furthermore, the coating layer is formed by preserving carbon containing methane or ethylene for 10 to 60 minutes under a pressure of 40 to 70 Torr in a hydrogen atmosphere in the temperature range from 200 to 500JJEC, with a carbon nano tube to be coated being housed in a coating apparatus. [ 12] Brief Description of the Drawings
[13] The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. [14] In the drawings :
[15] Fig. 1 is a view showing a frame format of a field emission device according to the present invention; [16] Fig. 2 is a SEM photograph of the field emission device according to the present invention; [17] Fig. 3 is a graph comparatively showing the field emission characteristics of the field emission device according to the present invention; and ; and to the prior art [18] Fig. 4 is a photograph comparatively showing a field emission image of the field emission device according to the present invention. [19] B est Mode for Carrying Out the Invention
[20] Hereinafter, a preferred embodiment of the present invention will be described in detail. [21] Fig. 1 is a view showing a frame format of a field emission device according to the present invention. Fig. 2 is a SEM photograph of the field emission device according to the present invention. Fig. 3 is a graph comparatively showing the field emission characteristics of the field emission device according to the present invention. Fig. 4 is a photograph comparatively showing a field emission image of the field emission device according to the present invention characteristic of a coating layer 20 formed on the outer surface of a carbon nano tube 10. [22] First, the present invention is to minimize the damage caused by arcing at a high voltage and reduce the work function of electrons to make an electron emission easier by forming a coating layer 20 on the outer surface of a carbon nano tube IQ preferably at the end thereof.
[23] At this time, the coating layer 20 is a material having the characteristics such as electron affinity, chemical stability, thermal stability, and high hardness, etc. It is preferable that the coating layer 20 is made of a carbonaceous matter having a lower work function, such as amorphous diamond, diamond like carbon, carbon fiber, boron nitride, aluminum nitride, gallium nitride, graphite or the like, individually or in a combination thereof.
[24] Further, as the method of coating the coating layer 2Q sputtering, electron beam or laser deposition, chemical vapor deposition, cathodic arc deposition or the like is suitable. The thickness of the coating layer 20 is preferably 1 to lOnm.
[25] This range is set in view of the geometrical shape of an electron emission source. The higher the aspect ratio of the geometrical shape is, that is, the sharper the tip of the electron emission source is, the better the electron emission gets, because if the coating thickness is too large, the aspect ratio becomes lower.
[26] Meantime, the process of forming a coating layer using plasma chemical vapor deposition will be described. Amorphous diamond (work function: l~3eV) is coated on the surface of an emitter at a thickness from 1 to lOnm by preserving for 10 to 60 minutes under a pressure of 40 to 70 Torr in a hydrogen atmosphere and a gas (hydrogen content: 0.1~0.5 wt%) contained carbon, such as methane or ethylene, with a coating apparatus set to the temperature range between 200 and 500JJEC.
[27] Although the coating layer formation process has been described with respect to plasma chemical vapor deposition and amorphous diamond, it will be readily apparent that other coating methods and coating materials falling in the range of the above description are contemplated as being within the scope of the present invention, as defined by the following claims.
[28] The operating procedure of the present invention will be described. A coating layer 20 is formed at the end of a carbon nano tube 10 and mounted or printed on a display device (not shown), and then if a voltage more than a predetermined level (threshold voltage: turn on voltage) is applied to the display device, an electric field is formed around the tip, whereby electrons start being emitted from the carbon nano tube 10.
[29] In this case, it is judged that the coating layer 20 prevents the damage caused by the residual gases and the outgassing caused upon a heat treatment being adsorbed and collided with the carbon nano tube 10 in the display device. [30] Fig. 2 shows a comparison of SEM photographs of the prior art and the present invention.
[31] In a comparative example (where no coating layer is formed), the diameter (??) of the carbon nano tube is 1 to 5nm, and the diameter (??) of the carbon particle is 60 to 70nm, while in the present invention (where a coating layer is formed) the diameter (??) of the carbon nano tube is 10 to 20nm.
[32] At this time, it can be seen that the diameter (??) of the carbon nano tube of this invention has grown at least twice larger as compared to the comparative example.
[33] Fig. 3 is a graph showing the field emission characteristics of the prior art and of the present invention. It can be seen that in the comparative example (where no coating layer is formed), the threshold voltage (turn on voltage) is about 2 V/um, while in the present invention the threshold voltage has reduced to about 1.5 V/um.
[34] Further, it can be seen that the emission current of this invention has become better about twice or more at the same voltage as compared to the comparative example, and there is hardly any damage caused by arching even at a high voltage (more than 3kV).
[35] Fig. 4 is a view comparatively showing field emission images of the prior art and of the present invention.
[36] It can be seen that in the comparative example (where no coating layer is formed), about 8mA of an emission current is generated at 1.5 kV, while in the present invention (where a coating layer is formed) about 20 mA of an emission current is generated at 1.5 kV.
[37] This is because the coating layer 20 coated on the carbon nano tube 10 is formed of material having a low work function to thus increase the field electron emission efficiency and the coating layer 20 is overally uniformly coated.
[38] Conclusively, as shown in Figs. 2 to 4, the field electron emission efficiency has increased since the material at the sharp tip of the electron emission source is made of material having a low work function, the coating layer has become overally uniform by means of coating, and the damage caused by collision with residual gas atoms and ions is reduced by means of the coating layer.
[39] Industrial Applicability
[40] As described above, according to the field emission device with a coating layer and the method of making the same, a coating layer is formed on the outer surface of a carbon nano tube to thus prevent the damage of the carbon nano tube caused by arching. By this, the emission characteristics of the field emission device are improved, the life span thereof is lengthened, and the current density of the field emission device is relatively increased to thus improve the brightness.

Claims

Claims
[1] A field emission device with a coating layer, wherein the coating layer is formed on the outer surface of a carbon nano tube. [2] The field emission device of claim 1, wherein the coating layer is made of one selected from the group consisting of amorphous diamond, diamond like carbon, carbon fiber, boron nitride, aluminum nitride, gallium nitride, graphite, etc. or in a combination thereof. [3] The field emission device of claim 1, wherein the coating layer is formed by sputtering, electron beam or laser deposition, chemical vapor deposition, cathodic arc deposition or the like. [4] The field emission device of claim 1, wherein the thickness of the coating layer is 1 to lOnm. [5] A method for fabricating a field emission device with a coating layer, wherein the coating layer is formed by preserving carbon containing methane or ethylene for 10 to 60 minutes under a pressure of 40 to 70 Torr in a hydrogen atmosphere in the temperature range from 200 to 50Q with a carbon nano tube to be coated being housed in a coating apparatus.
PCT/KR2004/002898 2003-11-10 2004-11-10 Field emission device with coating layer and method for fabricating the same WO2005045871A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2003-0079196 2003-11-10
KR20030079196A KR100561491B1 (en) 2003-11-10 2003-11-10 Plate field emission device with coating layer

Publications (1)

Publication Number Publication Date
WO2005045871A1 true WO2005045871A1 (en) 2005-05-19

Family

ID=34567687

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2004/002898 WO2005045871A1 (en) 2003-11-10 2004-11-10 Field emission device with coating layer and method for fabricating the same

Country Status (3)

Country Link
KR (1) KR100561491B1 (en)
TW (1) TW200516627A (en)
WO (1) WO2005045871A1 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008068351A3 (en) * 2006-12-08 2008-07-31 Thales Sa Cold cathode electronic tube with optical control
WO2010056521A1 (en) * 2008-10-30 2010-05-20 Sandisk 3D, Llc Electronic devices including carbon-based films, and methods of forming such devices
US7781950B2 (en) 2006-06-23 2010-08-24 Tsinghua University Field emission element having carbon nanotube and manufacturing method thereof
US8076834B2 (en) 2007-08-23 2011-12-13 E.I. Du Pont De Nemours And Company Field emission device with protecting vapor
US8133793B2 (en) 2008-05-16 2012-03-13 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US8183121B2 (en) 2009-03-31 2012-05-22 Sandisk 3D Llc Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
US8421050B2 (en) 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
US8466044B2 (en) 2008-08-07 2013-06-18 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods forming the same
US8569730B2 (en) 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US8835892B2 (en) 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
CN104124122A (en) * 2014-07-31 2014-10-29 国家纳米科学中心 Method for improving carbon nanotube field emitting performance through diamond-like carbon film
CN104975201A (en) * 2014-04-14 2015-10-14 现代自动车株式会社 Nanocarbon-reinforced aluminium composite materials and method for manufacturing the same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101100816B1 (en) * 2005-07-29 2012-01-02 삼성에스디아이 주식회사 Electron emission source for emitting thermal electron, electron emission device having the same, flat display apparatus having the same, and method of manufacturing the same
KR101636915B1 (en) 2010-09-03 2016-07-07 삼성전자주식회사 Semiconductor compound structure and method of manufacturing the same using graphene or carbon nanotubes, and seciconductor device including the semiconductor compound
JP6539414B2 (en) 2015-07-07 2019-07-03 バリュー エンジニアリング リミテッドValue Engineering,Ltd. Ion implanter repeller, cathode, chamber wall, slit member, and ion generator including the same
KR101945528B1 (en) * 2016-07-07 2019-02-08 티디에스 주식회사 Method for manufacturing a high-definition field emission device and the field emission device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208029A (en) * 1999-01-13 2000-07-28 Matsushita Electric Ind Co Ltd Electron emitting material, electron emitting element and its manufacture
JP2000285792A (en) * 1999-03-31 2000-10-13 Canon Inc Electron emitting element and image forming device using the same
JP2002093305A (en) * 2000-07-12 2002-03-29 Akio Hiraki Electron emitting negative electrode
JP2002203471A (en) * 2000-12-19 2002-07-19 Iimu Jisuun Field emitter
JP2003217516A (en) * 2002-01-10 2003-07-31 Samsung Electronics Co Ltd Field emission element having carbon nano-tube covered by protection film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208029A (en) * 1999-01-13 2000-07-28 Matsushita Electric Ind Co Ltd Electron emitting material, electron emitting element and its manufacture
JP2000285792A (en) * 1999-03-31 2000-10-13 Canon Inc Electron emitting element and image forming device using the same
JP2002093305A (en) * 2000-07-12 2002-03-29 Akio Hiraki Electron emitting negative electrode
JP2002203471A (en) * 2000-12-19 2002-07-19 Iimu Jisuun Field emitter
JP2003217516A (en) * 2002-01-10 2003-07-31 Samsung Electronics Co Ltd Field emission element having carbon nano-tube covered by protection film

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781950B2 (en) 2006-06-23 2010-08-24 Tsinghua University Field emission element having carbon nanotube and manufacturing method thereof
US7993180B2 (en) 2006-06-23 2011-08-09 Tsinghua University Manufacturing method of field emission element having carbon nanotubes
WO2008068351A3 (en) * 2006-12-08 2008-07-31 Thales Sa Cold cathode electronic tube with optical control
US8427039B2 (en) 2006-12-08 2013-04-23 Thales Optically controlled cold-cathode electron tube
US8076834B2 (en) 2007-08-23 2011-12-13 E.I. Du Pont De Nemours And Company Field emission device with protecting vapor
US8133793B2 (en) 2008-05-16 2012-03-13 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US8680503B2 (en) 2008-05-16 2014-03-25 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US8569730B2 (en) 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US8466044B2 (en) 2008-08-07 2013-06-18 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods forming the same
US8421050B2 (en) 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
WO2010059362A1 (en) * 2008-10-30 2010-05-27 Sandisk 3D, Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
WO2010059368A1 (en) * 2008-10-30 2010-05-27 Sandisk 3D, Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
WO2010056521A1 (en) * 2008-10-30 2010-05-20 Sandisk 3D, Llc Electronic devices including carbon-based films, and methods of forming such devices
US8835892B2 (en) 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
US8183121B2 (en) 2009-03-31 2012-05-22 Sandisk 3D Llc Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
CN104975201A (en) * 2014-04-14 2015-10-14 现代自动车株式会社 Nanocarbon-reinforced aluminium composite materials and method for manufacturing the same
CN104124122A (en) * 2014-07-31 2014-10-29 国家纳米科学中心 Method for improving carbon nanotube field emitting performance through diamond-like carbon film

Also Published As

Publication number Publication date
KR100561491B1 (en) 2006-03-20
KR20050045216A (en) 2005-05-17
TW200516627A (en) 2005-05-16

Similar Documents

Publication Publication Date Title
WO2005045871A1 (en) Field emission device with coating layer and method for fabricating the same
US5463271A (en) Structure for enhancing electron emission from carbon-containing cathode
US5977697A (en) Field emission devices employing diamond particle emitters
US6903500B2 (en) Field emitter device comprising carbon nanotube having protective membrane
Talin et al. Electron field emission from amorphous tetrahedrally bonded carbon films
KR101281168B1 (en) Field emission electrode, method for preparing the same and field emission device comprising the same
JPS63210099A (en) Preparation of diamond film
WO1997039469A1 (en) Energetic-electron emitters
EP0938739A1 (en) Carbon cone and carbon whisker field emitters
US20080277592A1 (en) Cold-cathode-based ion source element
KR100735792B1 (en) Discharge lamp
Zhang et al. Improvement of the field emission of carbon nanotubes by hafnium coating and annealing
JPH10261371A (en) Phosphor and display tube
WO2008103438A1 (en) Field emission device with anode coating
CN108987215B (en) Method for improving field emission performance of graphene sheet-carbon nanotube array composite material
Okuyama Growth of metallic whisker crystals incorporated with field electron emission
US20050266764A1 (en) Method of stabilizing field emitter
US6593683B1 (en) Cold cathode and methods for producing the same
Kojima et al. Growth of high-quality carbon nanotubes by grid-inserted plasma-enhanced chemical vapor deposition for field emitters
RU2218299C1 (en) A method to production of carbon nanopipes
Luo et al. Field emission characteristics of BN nanofilms grown on GaN substrates
JP3715790B2 (en) Method for producing impregnated cathode for discharge tube
KR20050048852A (en) Field emitter having thin and uniform protective layer
KR200429141Y1 (en) Cold Cathode Fluorescent Lamp Having A Electrode Coated With Diamond-Like Carbon
JPS58150247A (en) Aging method of cathode ray tube

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase