WO2005043752A1 - Film acoustically-coupled transformer with increased common mode rejection - Google Patents
Film acoustically-coupled transformer with increased common mode rejection Download PDFInfo
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- WO2005043752A1 WO2005043752A1 PCT/US2004/036089 US2004036089W WO2005043752A1 WO 2005043752 A1 WO2005043752 A1 WO 2005043752A1 US 2004036089 W US2004036089 W US 2004036089W WO 2005043752 A1 WO2005043752 A1 WO 2005043752A1
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- 239000003990 capacitor Substances 0.000 claims abstract description 79
- 230000003071 parasitic effect Effects 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims description 94
- 239000000463 material Substances 0.000 claims description 92
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 230000008859 change Effects 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims 2
- 230000001939 inductive effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 171
- 229920000265 Polyparaphenylene Polymers 0.000 description 26
- 239000013256 coordination polymer Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 20
- 238000002955 isolation Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000004642 Polyimide Substances 0.000 description 15
- 229920001721 polyimide Polymers 0.000 description 15
- 239000002243 precursor Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- 239000010931 gold Substances 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 230000004044 response Effects 0.000 description 12
- 239000004020 conductor Substances 0.000 description 10
- 238000000059 patterning Methods 0.000 description 9
- 229920000052 poly(p-xylylene) Polymers 0.000 description 7
- 238000004804 winding Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- -1 poly(para-xylylene) Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000001131 transforming effect Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 238000006352 cycloaddition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 125000002534 ethynyl group Chemical class [H]C#C* 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
- H03H9/584—Coupled Resonator Filters [CFR]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/0023—Balance-unbalance or balance-balance networks
- H03H9/0095—Balance-unbalance or balance-balance networks using bulk acoustic wave devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Definitions
- Transformers are used in many types of electronic device to perform such functions as transforming impedances, linking single-ended circuitry with balanced circuitry or vice versa and providing electrical isolation.
- an autotransformer does not provide electrical isolation.
- Transformers operating at audio and radio frequencies up to VHF are commonly built as coupled primary and secondary windings around a high permeability core. Current in the windings generates a magnetic flux. The core contains the magnetic flux and increases the coupling between the windings.
- a transformer operable in this frequency range can also be realized using an optical-coupler.
- An opto-coupler used in this mode is referred to in the art as an opto-isolator.
- the input electrical signal is converted to a different form (i.e., a magnetic flux or photons) that interacts with an appropriate transforming structure (i.e., another winding or a light detector), and is re-constituted as an electrical signal at the output.
- an opto-coupler converts an input electrical signal to photons using a light-emitting diode.
- the photons pass through an optical fiber or free space that provides isolation.
- a photodiode illuminated by the photons generates an output electrical signal from the photon stream.
- the output electrical signal is a replica of the input electrical signal.
- Such transformers also tend to be high in cost because they are not capable of being manufactured by a batch process and because they are essentially an off-chip solution. Moreover, although such transformers typically have a bandwidth that is acceptable for use in cellular telephones, they typically have an insertion loss greater than 1 dB, which is too high. Opto-couplers are not used at UHF and microwave frequencies due to the junction capacitance of the input LED, non-linearities inherent in the photodetector, limited power handling capability and insufficient isolation to give good common mode rejection.
- United States patent application serial no. 10/699,481 discloses a film acoustically-coupled transformer (FACT)
- A-10031284-2 based on decoupled stacked bulk acoustic resonators (DSBARs).
- a DSBAR is composed of a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler between the FBARs.
- Figure 1A schematically illustrates an embodiment 100 of such FACT.
- FACT 100 has a first decoupled stacked bulk acoustic resonator (DSBAR) 106 and a second DSBAR 108 suspended above a cavity 104 in a substrate 102.
- DSBAR decoupled stacked bulk acoustic resonator
- DSBAR 106 has a lower FBAR 110, an upper FBAR 120 stacked on lower FBAR 110, and an acoustic coupler 130 between them
- DSBAR 108 has a lower FBAR 150, an upper FBAR 160 stacked on lower FBAR 150, and an acoustic coupler 170 between them.
- Each of the FBARs has opposed planar electrodes and a piezoelectric element between the electrodes.
- FBAR 110 has opposed planar electrodes 112 and 114 with a piezoelectric element 116 between them.
- FACT 100 additionally has a first electrical circuit 141 interconnecting the lower FBAR 110 of DSBAR 106 and the lower FBAR 150 of DSBAR 108 and a second electrical circuit 142 interconnecting the upper FBAR 120 of DSBAR 106 and the upper FBAR 160 of DSBAR 108.
- electrical circuit 141 connects lower FBARs 1 10 and 150 in anti-parallel and to terminals 143 and 1 4 and electrical circuit 142 connects upper FBARs 120 and 160 in series between terminals 1 5 and 146.
- electrical circuit 142 additionally has a center-tap terminal 147 connected to electrodes 122 and 162 of upper FBARs 120 and 160, respectively.
- This embodiment has a 1 :4 impedance transformation ratio between electrical circuit 141 and electrical circuit 142 or a 4:1 impedance transformation ratio between electrical circuit 142 and electrical circuit 141.
- electrical circuit 141 electrically connects the lower FBARs 110 and 150 either in anti- parallel or in series
- electrical circuit 142 electrically connects the upper FBARs either in anti-parallel or in series. All embodiments of the above-described FACT are small in size, are capable of linking single-ended circuitry with balanced circuitry or vice versa, and provide electrical isolation between primary and secondary.
- the embodiments specifically described above are also nominally electrically balanced.
- the embodiment shown in Figure 1 A is of particular interest for a number of applications.
- CMRR common-mode rejection ratio
- One approach to increasing the common-mode rejection ratio is to increase the thickness of the acoustic decoupler.
- increasing the thickness of the acoustic decoupler causes the frequency response of the FACT to exhibit spurious artifacts caused by the ability of the thicker acoustic decoupler to support more than a single acoustic mode. Such spurious response artifacts are undesirable in many applications. What is needed, therefore, is an FACT that has the advantages of the FACT described above, but that has an increased common mode rejection ratio and a smooth frequency response.
- the invention provides a film acoustically-coupled transformer (FACT) that comprises a first decoupled stacked bulk acoustic resonator (DSBAR) and a second DSBAR.
- FACT film acoustically-coupled transformer
- DSBAR first decoupled stacked bulk acoustic resonator
- FBAR film bulk acoustic resonator
- Each FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes.
- the FACT additionally comprises a first electrical circuit connecting the lower FBAR of the first DSBAR to the lower FBAR of the second DSBAR and a second electrical circuit connecting the upper FBAR of the first DSBAR to the upper FBARs of the second DSBAR.
- the acoustic decoupler, one of the electrodes of the lower FBAR adjacent the acoustic decoupler and one of the electrodes of the upper FBAR adjacent the acoustic decoupler constitute a parasitic capacitor.
- the FACT additionally comprises an inductor electrically connected in parallel with the parasitic capacitor. The inductor increases the common-mode rejection ratio of the FACT.
- the invention provides a DSBAR device having a band-pass characteristic characterized by a center frequency.
- the DSBAR device comprises a lower film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and an acoustic decoupler between the FBARs.
- FBAR film bulk acoustic resonator
- Each FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes.
- the acoustic decoupler structured to impose a phase change nominally equal to ⁇ /2 on an acoustic signal equal in frequency to the center frequency.
- Figure 1 A is a schematic drawing of the electrical circuits of an embodiment of a 1 :4 or 4:1 film acoustically- coupled transformer (FACT) in accordance with the prior art.
- Figure 1 B is a schematic diagram showing the parasitic capacitor that exists in the FACT shown in Figure 1A when the center tap is grounded.
- Figure 1 C is a schematic diagram showing the parasitic capacitors that exist in the FACT shown in Figure 1A when the center tap is floating.
- Figure 2A is a schematic diagram of an exemplary grounded center tap embodiment of a film acoustically- coupled transformer (FACT) with high common-mode rejection ratio (CMRR) in accordance with the invention.
- FACT film acoustically- coupled transformer
- CMRR common-mode rejection ratio
- Figure 2B is a schematic diagram of an exemplary floating center tap embodiment of a FACT with high CMRR in accordance with the invention.
- Figure 3A is a schematic diagram of an exemplary grounded center tap embodiment of a FACT with high CMRR in accordance with the invention that provides DC isolation between primary and secondary.
- Figure 3B is a schematic diagram of an exemplary floating center tap embodiment of a FACT with high CMRR in accordance with the invention that provides DC isolation between primary and secondary.
- Figures 4A, 4B and 4C are respectively a plan view and cross-sectional views along the section lines 4B-4B and 4C-4C in Figure 4A of a FACT module with high CMRR that forms the basis of practical embodiments of a FACT in accordance with the invention.
- Figure 5 is a plan view of a first practical embodiment of a FACT with high CMRR in accordance with the invention.
- Figure 6 is a plan view of a second practical embodiment of a FACT with high CMRR in accordance with the invention.
- Figure 7 is a plan view of a third practical embodiment of a FACT with high CMRR in accordance with the invention that provides DC isolation between primary and secondary.
- Figures 8A, 8B and 8C are respectively a plan view, a side view and a cross-sectional view along the section line 8C-8C in Figure 8A of a fourth practical embodiment of a FACT with high CMRR in accordance with the invention.
- Figures 8D and 8E are plan views of the substrates that constitute part of the FACT shown in Figures 8A-8C.
- Figures 9A and 9B are respectively a plan view and a cross-sectional view along the section line 9B-9B in Figure 9A of a fifth practical embodiment of a FACT with high CMRR in accordance with the invention.
- Figures 10A and 10B are respectively a plan view and a cross-sectional view along the section line 10B-10B in Figure 1 0A of a sixth practical embodiment of a FACT with high CMRR in accordance with the invention that provides DC isolation between primary and secondary.
- Figures 1 1A-11 H are plan views and Figures 1 1 I-11 P are cross-sectional views along the section lines 111-111 through 1 1 P-11 P in Figures 11 A-11 H, respectively, illustrating a process that may be used to fabricate embodiments of the FACT shown in Figures 10A-10B.
- a signal-frequency voltage difference can exist between the electrodes on opposite sides of at least one of the acoustic decouplers 130 and 170 during normal operation.
- Figure 1 B shows FACT 1 O0 shown in Figure 1A in a typical application in which terminal 144 connected to electrodes 112 and 154 is grounded and a center tap terminal 147 connected to electrodes 122 and 162 is also grounded.
- a signal-frequency voltage difference exists between electrodes 114 and 122 on opposite sides of acoustic decoupler 130.
- a capacitor symbol labelled C P and depicted by broken lines represents the parasitic capacitor C P composed of electrodes 114 and 122 and acoustic decoupler 130.
- the capacitance of the parasitic capacitor is a maximum in embodiments in which the thickness of the acoustic decoupler is a minimum, i.e., the thickness of the acoustic decoupler is nominally equal to one quarter of the wavelength of an acoustic signal equal in frequency to the center frequency of the pass band of FACT 100.
- Such an acoustic decoupler imposes a phase change of ⁇ /2 radians on the acoustic signal.
- an element connected to a low impedance at the signal frequency instead of to ground will be regarded as being grounded.
- Figure 1 C shows FACT 100 in another exemplary application in which electrodes 112 and 154 are grounded, and electrical circuit 142 is floating.
- a signal-frequency voltage difference exists between electrodes 114 and 122 on opposite sides of acoustic decoupler 130, and a signal-frequency voltage difference additionally exists between electrodes 154 and 162 on opposite sides of acoustic decoupler 170.
- this voltage difference causes an additional current to flow between electrical circuit 141 and electrical circuit 142. This current flow further impairs the common mode rejection ratio of FACT 100.
- a capacitor symbol labeled C P ' and depicted by broken lines represents the parasitic capacitor C P ' provided by electrodes 154 and 162 and acoustic decoupler 170.
- FIG 2A is a schematic drawing showing an embodiment 200 of a film acoustically-coupled transformer (FACT) in accordance with the invention.
- FACT 200 is for use in an application similar to that described above with reference to Figure 1 B in which electrodes 112 and 154 connected to terminal 144 are grounded and electrodes 122 and 162 connected to center tap terminal 147 are also grounded. Elements of FACT 200 that correspond to elements of FACT 100 described above with reference to Figure 1 B are indicated by the same reference numerals and will not be described again here.
- an inductor 180 is connected between electrode 114 and electrode 122 on opposite sides of acoustic decoupler 130. This connects inductor 180 in parallel with parasitic capacitor C P .
- Inductor 180 significantly increases the common-mode rejection ratio of FACT 200 relative to that of FACT 100 by reducing the current flow between electrical circuit 141 and electrical circuit 142. Inductor 180 additionally improves the input match.
- FACT 200 has a pass band.
- Inductor 180 and the parallel combination of parasitic capacitor C P and the capacitance C 0 between terminals 143 and 144 form a parallel resonant circuit 182 having a resonant frequency in the pass band.
- the resonant frequency is equal to the center frequency of the pass band of FACT 200.
- the impedance of parallel resonant circuit 182 depends on a relationship between the signal frequency and the resonant frequency of the resonant circuit, and is a maximum at the resonant frequency.
- FACT 202 is for use in an application similar to that described above with reference to Figure 1 C in which electrodes 112 and 124 are grounded and electrical circuit 142 is floating. Elements of FACT 202 that correspond to elements of FACT 100 described above with reference to Figure 1 B and of FACT 200 described above with reference to Figure 2A are indicated by the same reference numerals and will not be described again here.
- FACT 202 has an inductor 180 connected between electrode 114 and electrode 122 on opposite sides of acoustic decoupler 130 and an inductor 181 connected between electrode 154 and electrode 162 on opposite sides of acoustic decoupler 170.
- Inductors 180 and 181 significantly increase the common-mode rejection ratio of FACT 202 relative to that of FACT 100 by reducing the current flow between electrical circuit 141 and electrical circuit 142. Inductor 180 additionally improves the input match. Inductor 180 and the parallel combination of parasitic capacitor C P and inter-terminal capacitance C 0 form a parallel resonant circuit 182 having a resonant frequency in the pass band of FACT 202. Inductor 181 and parasitic capacitor C P ' form a parallel resonant circuit 183 having a resonant frequency in the pass band of FACT 202. In one embodiment, parallel resonant circuits 182 and 183 have respective resonant frequencies equal to the center frequency of the pass band of FACT 202.
- the impedance of parallel resonant circuits 182 and 183 depends on a relationship between the signal frequency and the resonant frequency of the respective resonant circuit, and is a maximum at the resonant frequency. At signal frequencies above and below the resonant frequency, the impedance of the parallel resonant circuits 182 and 183 is less than at the resonant frequency, but is substantially greater than that of parasitic capacitors C P and C P ' alone at all signal frequencies in the pass band of FACT 202. Accordingly, the current that flows between electrical circuit 141 and electrical circuit 142 through parallel resonant circuits 182 and 183 is substantially less than that which would flow through parasitic capacitors C P and C P ' alone.
- FIG. 3A is a schematic drawing showing an embodiment 300 of a FACT in accordance with the invention that additionally provides electrical isolation between electrical circuits 141 and 142 at DC voltages up to the breakdown voltage of an isolating capacitor 184 connected in series with inductor 180.
- FACT 300 is for use in an application similar to that described above with reference to Figure 1 B in which electrodes 112 and 154 connected to terminal 144 are grounded and electrodes 122 and 162 connected to center tap terminal 147 are also grounded. Elements of the FACT 300 shown in Figure 3A that correspond to elements of FACT 200 shown in Figure 2A are indicated using the same reference numerals and will not be described again here.
- isolating capacitor 184 and inductor 180 are connected in series between electrode 114 and electrode 122 on opposite sides of acoustic decoupler 130.
- inductor 180 and the parallel combination of parasitic capacitor C P and inter-electrode capacitance C 0 form a parallel resonant circuit 182 that reduces the current flow between electrical circuit 141 and electrical circuit 142.
- Inductor 180 additionally forms a series resonant circuit with isolating capacitor 184.
- the capacitance of isolating capacitor 184 is at least four times that of the parallel combination of parasitic capacitor C P and inter-electrode capacitance C 0 so that the series resonant frequency of inductor 180 and isolating capacitor 184 is at least one octave lower than the parallel resonant frequency of inductor 180 and the parallel combination of parasitic capacitance C P and inter-electrode capacitance C 0 .
- isolating capacitor 184 has a negligible effect on the frequency response of the parallel resonance in the pass band of FACT 300.
- FIG. 3B is a schematic drawing showing an embodiment 302 of a FACT in accordance with the invention.
- FACT 302 is for use in an application similar to that described above with reference to Figure 1 C in which electrodes 112 and 154 are grounded and electrical circuit 142 is floating. Elements of the FACT 302 shown in Figure 3B that correspond to elements of FACT 202 shown in Figure 2B are indicated using the same reference numerals and will not be described again here.
- FACT 302 has inductor 180 and isolating capacitor 184 connected in series between the electrode 114 and electrode 122 on opposite sides of acoustic decoupler 130 and inductor 181 and an isolating capacitor 185 connected in series between electrode 154 and electrode 162 on opposite sides of acoustic decoupler 170.
- FIGS. 4A-4C are respectively a plan view and two cross-sectional views of an embodiment 400 of a film acoustically-coupled transformer (FACT) module that forms part of practical embodiments of a FACT with a high common-mode rejection ratio to be described below.
- FACT film acoustically-coupled transformer
- FACT module 400 is composed of a substrate 102 and decoupled stacked bulk acoustic resonators (DSBARs) 106 and 108.
- DSBARs decoupled stacked bulk acoustic resonators
- Each DSBAR is composed of a lower film bulk acoustic resonator (FBAR), an upper FBAR and an acoustic decoupler between the FBARs.
- FACT module 400 is additionally composed of an electrical circuit that connects the lower FBAR 11 0 of DSBAR 106 to the lower FBAR 150 of DSBAR 108, and an electrical circuit that connects the upper FBAR 120 of DSBAR 106 to the upper FBAR 160 of DSBAR 108.
- lower FBAR 110 is composed of opposed planar electrodes 112 and 114 and a piezoelectric element 116 between the electrodes
- upper FBAR 120 is composed of opposed planar electrodes 122 and 124 and a piezoelectric element 126 between the electrodes.
- lower FBAR 150 is composed of opposed planar electrodes 152 and 154 and a piezoelectric element 156 between the electrodes
- upper FBAR 160 is composed of opposed planar electrodes 162 and 164 and a piezoelectric element 166 between the electrodes.
- acoustic decoupler 130 is located between lower FBAR 110 and upper FBAR 120; specifically, between electrode 114 of lower FBAR 110 and electrode 122 of upper FBAR 120. Acoustic decoupler 130 controls the coupling of acoustic energy between FBARs 110 and 120.
- Acoustic decoupler 130 couples less acoustic energy between the FBARs 110 and 120 than would be coupled if the FBARs were in direct contact with one another
- acoustic decoupler 170 is located between FBARs 150 and 160; specifically, between electrode 154 of lower FBAR 150 and electrode 162 of upper FBAR 160.
- Acoustic decoupler 170 controls the coupling of acoustic energy between FBARs 150 and 160.
- Acoustic decoupler 170 couples less acoustic energy between the FBARs 150 and 160 than would be coupled if the FBARs were in direct contact with one another.
- acoustic decouplers 130 and 170 determines the bandwidth of the passband of FACT module 400.
- acoustic decouplers 130 and 170 are respective parts of an acoustic decoupling layer 131.
- Acoustic decoupling layer 131 is a layer of acoustic decoupling material.
- One important property of the acoustic decoupling material of acoustic decoupling layer 131 is an acoustic impedance significantly different from than that of FBARs 110, 120, 150 and 160.
- Such an acoustic decoupling layer imposes a phase change of an odd integral multiple of ⁇ /2 radians on an acoustic signal having a frequency nominally equal to the center frequency of the pass band of FACT module 400.
- An acoustic decoupling layer that differs from the nominal thickness by approximately ⁇ 10% of ⁇ J4 can alternatively be used. A thickness tolerance outside this range can be used with some degradation in performance, but the thickness of acoustic decoupling layer 131 should differ significantly from an integral multiple of ⁇ J2.
- Such an embodiment of the acoustic decoupling layer will be referred to as a minimum-thickness acoustic decoupling layer.
- a minimum-thickness acoustic decoupling layer imposes a phase change of ⁇ /2 radians on an acoustic signal having a frequency nominally equal to the center frequency of the pass band of FACT module 400.
- the frequency response of embodiments of the FACT module having a minimum-thickness acoustic decoupling layer lacks the above-mentioned spurious response artifacts exhibited by embodiments in which the nominal thickness of the acoustic decoupling layer is greater than the minimum.
- a smooth frequency response has hitherto been obtained at the expense of parasitic capacitor C P having a substantially greater capacitance, and embodiments having a smooth frequency response have therefore typically had a low common-mode rejection ratio.
- Embodiments of the FACT in accordance with the invention use an inductor to reduce the effect of the high parasitic capacitance resulting from a minimum- thickness acoustic decoupling layer.
- embodiments of the FACT in accordance with the invention have both a high CMRR and the smooth frequency response provided by the minimum-thickness acoustic decoupling layer.
- An inductor, or an inductor and a blocking capacitor in series may be connected between the electrodes located on opposite sides of the acoustic decoupler in any device, such as an acoustically-coupled transformer or a band-pass filter, that incorporates one or more DSBARs to reduce effect of the parasitic capacitance between the constituent FBARs on the properties of the device.
- any device such as an acoustically-coupled transformer or a band-pass filter, that incorporates one or more DSBARs to reduce effect of the parasitic capacitance between the constituent FBARs on the properties of the device.
- Such devices will be referred to generically as DSBAR devices.
- acoustic decoupling material of acoustic decoupling layer 131 that provides acoustic decouplers 130 and 170.
- the acoustic decoupling material must also be capable of withstanding the temperatures of the fabrication operations performed after acoustic decoupling layer 131 has been deposited on electrodes 114 and 154 to form acoustic decouplers 130 and 170.
- Electrodes 122, 124, 162 and 164 and piezoelectric elements 126 and 166 are deposited by sputtering after acoustic decoupling layer 131 has been deposited. Temperatures as high as 300 °C are reached during these deposition processes. Thus, a plastic that remains stable at such temperatures is used as the acoustic decoupling material.
- a polyimide is used as the acoustic decoupling material of layer 131. Polyimide is sold under the trademark Kapton® by E. I. du Pont de Nemours and Company.
- acoustic decouplers 130 and 170 are composed of layer 131 of polyimide applied to electrodes 114 and 154 by spin coating.
- Polyimide has an acoustic impedance of about 4 megarayleigh (Mrayl).
- a poly(para-xylylene) is used as the acoustic decoupling material of layer 131.
- acoustic decouplers 130 and 170 are composed of layer 131 of poly(para-xylylene) applied to electrodes 114 and 154 by vacuum deposition.
- Poly(para-xylylene) is also known in the art as parylene.
- the dimer precursor di- para-xylylene from which parylene is made and equipment for performing vacuum deposition of layers of parylene are available from many suppliers. Parylene has an acoustic impedance of about 2.8 Mrayl.
- the acoustic decoupling material of acoustic decoupling layer 131 is a crosslinked polyphenylene polymer.
- acoustic decoupling layer 131 is a layer of a crosslinked polyphenylene ⁇ polymer
- Crosslinked polyphenylene polymers have been developed as low dielectric constant dielectric materials for use in integrated circuits and consequently remain stable at the high temperatures to which acoustic decoupling layer 131 is subject during the subsequent fabrication of FBARs 120 and 160.
- the inventors have discovered that crosslinked polyphenylene polymers additionally have a calculated acoustic impedance of about 2 Mrayl.
- This acoustic impedance is in the range of acoustic impedances that provides FACT module 400 with a useful pass bandwidth.
- Precursor solutions containing various oligomers that polymerize to form respective crosslinked polyphenylene polymers are sold by The Dow Chemical Company, Midland, Ml, under the trademark SiLK. The precursor solutions are applied by spin coating.
- the oligomers that polymerize to form crosslinked polyphenylene polymers are prepared from biscyclopentadienone- and aromatic acetylene-containing monomers. Using such monomers forms soluble oligomers without the need for undue substitution.
- the precursor solution contains a specific oligomer dissolved in gamma- butyrolactone and cyclohexanone solvents. The percentage of the oligomer in the precursor solution determines the layer thickness when the precursor solution is spun on. After application, applying heat evaporates the solvents, then cures the oligomer to form a cross-linked polymer.
- a spun-on layer of the precursor solution is capable of producing a high-quality film of the crosslinked polyphenylene polymer with a thickness of the order of 200 nm, which is a typical thickness of acoustic decoupling layer 131.
- acoustic decouplers 130 and 170 are composed of acoustic decoupling layers (not shown) of acoustic decoupling materials having different acoustic impedances as described in United States patent application serial no. XX/XXX,XXX of John D. Larson III and Stephen Ellis entitled Pass Bandwidth Control in Decoupled Stacked Bulk Acoustic Resonator Devices.
- the acoustic impedances and thicknesses of the acoustic decoupling layers collectively define the acoustic impedance of, and phase change imposed by, acoustic decouplers 130 and 170.
- the acoustic impedance of the acoustic decouplers in turn defines the pass bandwidth of FACT module 400.
- the acoustic decouplers were composed of an acoustic decoupling layer of crosslinked polyphenylene polymer atop of an acoustic decoupling layer of polyimide.
- Such acoustic decouplers provide an embodiment of FACT module 400 with a pass bandwidth intermediate between the pass bandwidths of embodiments in which the acoustic decouplers are composed of single acoustic decoupling layer 131 of polyimide or are composed of single acoustic decoupling layer 131 of the crosslinked polyphenylene polymer.
- the acoustic decoupling material of acoustic decoupling layer 131 has an acoustic impedance substantially greater than the materials of FBARs 110 and 120. No materials having this property are known at this time, but such materials may become available in future, or lower acoustic impedance FBAR materials may become available in future.
- acoustic decouplers 130 and 170 each include a Bragg structure composed of a low acoustic impedance Bragg element sandwiched between high acoustic impedance Bragg elements.
- the low acoustic impedance Bragg element is a layer of a low acoustic impedance material whereas the high acoustic impedance Bragg elements are each a layer of high acoustic impedance material.
- the acoustic impedances of the Bragg elements are characterized as "low” and “high” with respect to one another and additionally with respect to the acoustic impedance of the piezoelectric material of layers 116, 126, 156 and 166. At least one of the Bragg elements additionally has a high electrical resistivity and a low dielectric permittivity to provide electrical isolation between input and output of FACT module 40O.
- Each of the layers constituting the Bragg elements has a nominal thickness equal to an odd integral multiple of one quarter of the wavelength in the material of the layer of an acoustic signal equal in frequency to the center frequency of FACT module 40O. Layers that differ from the nominal thickness by approximately ⁇ 10% of one quarter of the wavelength can alternatively be used.
- the low acoustic impedance Bragg element is a layer of silicon dioxide (Si0 2 ), which has an acoustic impedance of about 1 3 Mrayl
- each of the high acoustic impedance Bragg elements is a layer of the same material as electrodes 114, 122, 154 and 162, e.g., molybdenum, which has an acoustic impedance of about 63 Mrayl.
- Using the same material for th e high acoustic impedance Bragg elements and the electrodes of FBARs 110, 120, 150 and 160 allows the high acoustic impedance Bragg elements additionally to serve as the electrodes of the FBARs adjacent the acoustic coupling elements.
- DSBAR 106 and DSBAR 108 are located adjacent one another suspended over cavity 104 defined in a substrate 102. Suspending the DSBARs over a cavity allows the stacked FBARs in each DSBAR to resonate mechanically. Other suspension schemes that allow the stacked FBARs to resonate mechanically are possible.
- the DSBARs can be located over a mismatched acoustic Bragg reflector (not shown) formed in or on substrate 102, as disclosed by Lakin in United States patent no. 6,107,721.
- a bonding pad 138 located on the major surface of substrate 102 provides the signal terminal 143 of electrical circuit 141 of FACT module 400.
- a bonding pad 132 located on the major surface of substrate 102 and a bonding pad 172 located on the major surface of piezoelectric layer 117 that provides piezoelectric elements 116 and 156 collectively constitute the ground terminal 144 of electrical circuit 141.
- An interconnection pad 176 located on the major surface of the substrate, an electrical trace 177 extending from electrode 152 to interconnection pad 176, an interconnection pad 136 in electrical contact with interconnection pad 176, an electrical trace 137 extending from electrode 114 to interconnection pad 136, and an electrical trace 139 extending from interconnection pad 176 to bonding pad 138 constitute the part of electrical circuit 141 that electrically connects electrode 114 of FBAR 110 to electrode 152 of FBAR 150 and to signal terminal 143.
- Electrical trace 133 extending from electrode 112 to bonding pad 132, electrical trace 167 extending from bonding pad 132 to bonding pad 172 and electrical trace 173 extending from electrode 154 to bonding pad 172 constitute the part of electrical circuit 141 that electrically connects electrode 1 12 of FBAR 1 10 to electrode 154 of FBAR 150.
- Bonding pad 134 and bonding pad 174 located on the major surface of the piezoelectric layer 127 that provides piezoelectric elements 126 and 166 constitute signal terminals 145 and 146 of electrical circuit 142.
- Bonding pad 178 located on the major surface of acoustic decoupling layer 131 constitutes center-tap terminal 147 of electrical circuit
- Bonding pads 163 and 1 68 located on the major surface of piezoelectric layer 127 provide additional ground connections.
- An electrical trace 171 that extends between electrode 122 and electrode 162 over the surface of the acoustic decoupling layer 131 and an electrical trace 179 that extends between electrical trace 171 and bonding pad 178 constitute the part of electrical circuit 142 that connects FBAR 120 and FBAR 160 in series and to center-tap terminal 147.
- An electrical trace 135 that extends between electrode 124 and bonding pad 134 and an electrical trace 175 that extends between electrode 154 and bonding pad 174 constitute the part of electrical circuit 142 that connects FBAR 120 and FBAR 160 to signal terminals 145 and 146.
- Electrical trace 169 extends between bonding pad 163 and bonding pad 168 that provide the ground terminals of electrical circuit 142. In this embodiment electrical trace 169 additionally extends to bonding pad 178 to connect center tap terminal 147 ( Figure 2A) to the ground of electrical circuit 142.
- Thousands of FACT modules similar to FACT module 400 are fabricated at a time by wafer-scale fabrication. Such wafer-scale fabrication makes the FACT modules inexpensive to fabricate. An exemplary fabrication process that, with different masks, can be used to fabricate embodiments of FACT module 400 will be described below.
- Figure 5 is a plan view of a first practical embodiment 500 of a FACT with increased CMRR in accordance with the invention.
- FACT' 500 is composed of FACT module 400, a daughter board 511 and inductor 180 ( Figure 2A) embodied in the example shown as a surface-mount inductor 513.
- inductor 180 defined in a conductive layer on the major surface 515 of daughter board 511 are bonding pads 521, 522, 523, 524, 525, 526, 527 and 528, terminal pads 531, 532, 533, 534, 535, 536, 537, and 538 and attachment pads 541 and 543.
- a trace 551 that extends between bonding pad 521 and terminal pad 531; a trace 552 that extends between bonding pad 522 and terminal pad 532; a trace 553 that extends between bonding pad 523 and terminal pad 533; a trace 554 that extends between bonding pad 524 and terminal pad 534; a trace 555 that extends between bonding pad 525 and terminal pad 535; a trace 556 that extends between bonding pad 526 and terminal pad 536; a trace 557 that extends between bonding pad 527 and terminal pad 537; and a trace 558 that extends between bonding pad 528 and terminal pad 538. Also defined in the conductive layer of daughter board 511 are a trace 561 that extends between bonding pad
- FACT module 400 is mounted on the major surface 515 of daughter board 511 with bonding pads 172, 138, 132,
- Bonding wires 571 , 572, 573, 574, 575, 576, 577 and 578 extend between, and electrically connect, bonding pads 172, 138, 132, 163, 134, 178, 174 and 168, respectively, of FACT module 400 and bonding pads 521 , 522, 523, 524, 525, 526,
- FACT module 400 is configured with terminal pads (not shown) located on the major surface (not shown) of substrate 102 opposite major surface 103 in a manner similar to that described below with reference to
- terminal pads are electrically connected by vias (not shown) extending through the substrate to bonding pads 172, 138, 132, 163, 134, 178, 174 and 168.
- Bonding pads 521 , 522, 523, 524, 525, 526, 527 and 529, respectively, are located on the major surface 515 of daughter board 511 in positions corresponding to the positions of the terminal pads on FACT module 400.
- FACT module 400 is then mounted on daughter board 511 with the terminal pads on the FACT module connected to the bonding pads on the daughter board using solder bumps or another suitable connection technique.
- Surface-mount inductor 513 is mounted on attachment pads 541 and 543.
- a non surface-mount inductor may be electrically connected to attachment pads 541 and 543.
- one end of inductor 513 is electrically connected to electrode 122 of FBAR 120 ( Figure 4B) by attachment pad 541, trace 561 , bonding pad 526, bonding wire 576, bonding pad 178, trace 179 and part of trace 171 ( Figure 4A).
- the other end of inductor 513 is electrically connected to electrode 114 of FBAR 110 by attachment pad 543, trace 563, bonding pad 522, bonding wire 572, bonding pad 138, trace 139, interconnection pads 176 and 136 and trace 137.
- inductor 513 is connected to electrodes 114 and 122 on opposite sides of acoustic decoupler 130 in a manner similar to that shown in Figure 2A.
- FACT 500 structured for operation at a frequency of about 1.9 GHz
- acoustic decouplers 130 and 170 had a nominal thickness equal to one quarter of the wavelength in the acoustic decoupling material of an acoustic signal equal in frequency to the center frequency of the pass band of the FACT
- the parasitic capacitor Cp between electrodes 114 and 122 was about 1 pF
- the capacitance C 0 between input terminals 143 and 144 ( Figure 2A) was about 1.2 pF
- the inductance of inductor 513 was about 3.2 nH.
- FIG. 6 is a plan view of a second practical embodiment 502 of a FACT with increased CMRR in accordance with the invention. Elements of FACT 502 that correspond to FACT module 500 shown in Figure 5 and FACT module 400 shown in Figures 4A-4C are indicated using the same reference numerals and will not be described again here.
- inductor 180 is embodied as a spiral trace 514 defined in the conductive layer of daughter board
- daughter board 511 is a multi-layer board and trace 565 is at a level below the major surface
- FIG. 7 is a plan view of a third practical embodiment 504 of a FACT with increased CMRR in accordance with the invention.
- FACT 504 provides DC isolation between electrical circuits 141 and 142 ( Figure 3A). Elements of FACT 504 that correspond to FACT module 500 shown in Figure 5 and FACT module 400 shown in Figures 4A-4C are indicated using the same reference numerals and will not be described again here.
- FACT 504 is composed of FACT module 400, daughterboard 511 , inductor 180 ( Figure 3A) embodied in the example shown as surface-mount inductor 513, and isolating capacitor 184 ( Figure 3A) embodied in the example shown as a surface-mount capacitor 517.
- inductor 180 Figure 3A
- isolating capacitor 184 Figure 3A
- a surface-mount capacitor 517 Additionally defined in a conductive layer on the major surface 515 of daughter board 511 are attachment pads 545 and 547 and conductive traces 565 and 567. Conductive trace 565 extends between attachment pad 543 and attachment pad 545 and conductive trace 567 extends between attachment pad 547 and bonding pad 522.
- Surface-mount inductor 513 is mounted on attachment pads 541 and 543 as described above.
- Surface-mount capacitor 517 is mounted on attachment pads 545 and 547.
- a non surface-mount inductor may be electrically connected to attachment pads 541 and 543 and/or a non surface-mount isolating capacitor may be electrically connected to attachment pads 545 and 547.
- An inductor defined in the conductive layer of daughter board 511 similar to spiral trace 514 described above with reference to Figure 6 may be substituted for attachment pads 541 and 543 and surface-mount inductor 513.
- one end of inductor 513 is electrically connected to electrode 122 of FBAR 120 ( Figure 4B) by attachment pad 541 , trace 561 , bonding pad 526, bonding wire 576, bonding pad 178, trace 179 ( Figure 4A) and part of trace 171 ( Figure 4A).
- inductor 513 is electrically connected to one end of isolating capacitor 517 by attachment pad 543, trace 565 and attachment pad 545.
- the other end of isolating capacitor 517 is connected to electrode 114 of FBAR 110 by attachment pad 547, trace 567, bonding pad 522, bonding wire 572, bonding pad 138, trace 139, interconnection pad 176, interconnection pad 136 and trace 137.
- inductor 513 and isolating capacitor 517 connected jn series are connected to electrodes 114 and 122 on opposite sides of acoustic decoupler 130 in a manner similar to that shown in Figure 3A.
- isolating capacitor 517 had a capacitance of about 8 pF and a breakdown voltage greater than the maximum DC voltage specified between electrical circuits 141 and 142 ( Figure 3A).
- Each of FACTs 500, 60O and 700 is used by mounting daughter board 511 on the printed circuit board of a host electronic device (not shown), such as a cellular telephone, and making electrical connections between terminal pads 531, 532, 533, 534, 535, 536, 537 and 538 and corresponding pads on the printed circuit board.
- FIGS. 8A, 8B and 8C are respectively a plan view, a side view and a cross-sectional view along the section line 8C-8C in Figure 8A of a fourth practical embodiment 600 of a FACT with high CMRR in accordance with the invention.
- FACT 600 DSBARs 106 and 108, electrical circuits 141 and 142 and inductor 181 are enclosed in a hermetic enclosure of which the substrate of the FACT module forms part.
- FIGs 8D and 8E are respectively plan views of an embodiment 601 of FACT module 400 and an auxiliary substrate 611 that, together with an annular gasket 607, form FACT 600.
- Elements of FACT BOO that correspond to FACT module 400 shown in Figures 4A-4C are indicated using the same reference numerals and will not be described again here.
- FACT 600 is composed of embodiment 601 of FACT module 400 described above with reference to Figures 4A- 4C, auxiliary substrate 61 1 , annular gasket 607, and inductor 180 ( Figure 2A) embodied in the example shown as surface-mount inductor 613.
- Figure 8D is a plan view of FACT module 601 that forms part of FACT 600.
- FACT module 601 has a substrate 602 that is extended in the - and /-directions relative to the substrate 102 of the embodiment of FACT module 400 described above with reference to Figures 4A-4C.
- An annular pad 605 is located on the major surface 609 of substrate 602 surrounding DSBARs 106 and 108 ( Figure 4A) and bonding pads 172, 138, 132, 163, 134, 178, 174 and 168. Bonding pads 132 and 138 and interconnection pad 176 are located on major surface 609.
- Annular gasket 607 typically has a dimension in the z-direction greater than the sum of the z-direction dimensions of DSBAR 106 or DSBAR 108 and surface-mount inductor 613 and is located on annular pad 605.
- a terminal pad is located on the major surface 615 of substrate 602 opposite each of bonding pads 172, 138, 132, 163, 134, 178, 174 and 1 68.
- Major surface 615 is opposite major surface 609.
- a conductive via extends through substrate 602 from each of the connection pads 132, 138, 178, 168 and 172 to its respective attachment pad.
- the locations of vias 621 , 622, 623, 624, 625, 626, 627 and 628 are indicated by broken lines in Figure 8D.
- Figure 8B shows terminal pads 631 and 638 located on major surface 615.
- the cross-sectional view of Figure 8C shows terminal pads 632 and 636 located on major surface 615 opposite bonding pads 138 and 178, respectively, and electrically connected to bonding pads 138 and 178, respectively, by vias 622 and 626, respectively, that extend through substrate 602.
- cylindrical interconnection posts 672 and 676 are located on the surface of bonding pads 138 and 178, respectively. Interconnection posts 672 and 676 have a dimension in the z-direction greater than or equal to the dimension of gasket 607 in the z-direction.
- Figure 6E shows the major surface 617 of auxiliary substrate 611.
- Major surface 617 is opposite major surface
- annular pad 619 Located on major surface 617 are annular pad 619, connection pads 682 and 686, attachment pads 641 and 642 and electrical traces 661 and 663.
- annular pad 619, connection pads 682 and 686, attachment pads 641 and 642 and electrical traces 661 and 663 are defined in a conductive layer (not shown) located on major surface 617.
- Annular pad 619 is similar in shape and dimensions to annular pad 605 on substrate 602 and engages with gasket 607 when FACT 600 is assembled.
- Connection pads 682 and 686 are similar in shape and dimensions to bonding pads 138 and 178 and are arranged on major surface 617 relative to annular pad 619 such that they engage with interconnection posts 672 and 676, respectively, when annular pad 619 is engaged with gasket 607.
- the positions of interconnection posts 672 and 672 and of gasket 607 at engagement are indicated by broken lines in Figure 6E.
- Electrical trace 661 extends from connection pad 686 to attachment pad 641 and electrical trace 663 extends from connection pad 682 to attachment pad 643.
- Surface-mount inductor 613 is mounted on attachment pads 641 and 643. Alternatively, a non surface-mount inductor may be electrically connected to attachment pads 641 and 643.
- inductor 613 is electrically connected to electrode 122 of FBAR 120 ( Figure 2B) by attachment pad 641, trace 661 , connection pad 686, interconnection post 676, bonding pad 178, trace 179 and part of trace 171 ( Figure 4A). Additionally, the other end of inductor 613 is electrically connected to electrode 114 of FBAR 110 ( Figure 2B) by attachment pad 643, trace 663, connection pad 682, interconnection post 672, bonding pad 138, trace 139, interconnection pads 176 and 136 and trace 137. Thus, inductor 613 is connected to electrodes 114 and 122 on opposite sides of acoustic decoupler 130 in a manner similar to that shown in Figure 2A.
- An inductor similar to spiral trace 514 described above with reference to Figure 6 may be defined in the conductive layer of auxiliary substrate 611 and substituted for attachment pads 641 and 643 and surface-mount inductor 613. Additional attachment pads similar to attachment pads 545 and 547 described above with reference to Figure 7 may additionally be defined in the conductive layer of auxiliary substrate 611. Electrical traces additionally defined in the conductive layer electrically connect a surface-mount or other type of isolating capacitor mounted on the additional attachment pads in series with the inductor between connection pads 682 and 686 to provide DC isolation between electrical circuits 141 and 142 in a manner similar to that described above with reference to Figures 3A, 3B and 7.
- gasket 607 is formed of a non-hermetic material coated with a layer of sealing material and interconnection posts 672 and 676 are formed of a non-conductive material coated with a layer of electrically- conductive material as described in United States patent application serial no. 10/890,343 of Larson III et al., assigned to the assignee of this disclosure.
- the same material or different materials may be used as the non-hermetic material and the non-conductive material.
- the same material or different materials may be used as the sealing material and the conductive material.
- gasket 607 is formed of a material that bonds with silicon as described in
- FACT 600 is used by mounting it on the printed circuit board of a host electronic device (not shown) and attaching terminal pads 5631 -638 to corresponding pads on the printed circuit boards using solder bumps or another suitable attachment process.
- An exemplary process for fabricating FACT 600 will now be described. Although the fabrication of a single FACT will be described, the processes to be described are typically applied to wafers in which thousands of devices identical to FACT 600 are formed.
- FACT module 602 is fabricated using a process similar to that described below with reference to Figures 11 A-11P, but using different masks.
- Patterning one of the metal layers, typically the first metal layer, deposited in the course of the FACT module fabrication process additionally defines annular pad 604 on the major surface 609 of substrate 602.
- Interconnection posts 672 and 676 and gasket 607 are formed on bonding pads 138 and 178 and annular pad 609, respectively, of substrate 602 by depositing a layer of compliant material, such as polyimide on major surface 609.
- the layer of compliant material is patterned by photolithography and a developing solvent to define interconnection posts 672 and 676 and gasket 607.
- the interconnection posts and the gasket are then coated with a coating material.
- a seed layer e.g., a layer of titanium
- interconnection posts 672 and 676 and gasket 607 are electroplated with a relatively thick layer of an electrically-conductive material, such as gold.
- the coating makes gasket 607 and interconnection posts 672 and 676 electrically conductive and additionally makes gasket 607 impervious to gases such as air and water vapor. Vias are formed in substrate 602 at locations underlying bonging pads 172, 138, 132, 163, 134, 178, 174 and 168 are formed in substrate 602.
- Photolithography and anisotropic etching are used, or another suitable fabrication technique is used, to form holes that respectively extend through substrate 602 and, where present, the layers deposited on substrate 602, to the overlying bonding pads.
- the holes are then filled with conductive material, such as copper or gold.
- a layer (not shown) of electrically-conducting material, such as gold, is then deposited on the major surface 615 of substrate 602.
- the layer is patterned to define a terminal pad electrically connected to each of the vias and, hence, to a respective one of connection pads 172, 138, 132, 163, 134, 178, 174 and 168.
- gold is deposited by evaporation on major surface 615.
- the gold is patterned to define the terminal pads.
- Terminal pads 631 , 632, 636 and 638 are shown in Figures 8B and 8C.
- a layer of electrically-conducting material (not shown) is deposited on the major surface 617 of auxiliary substrate 611 by a suitable deposition technique.
- Auxiliary substrate 611 is typically part of a wafer of silicon, ceramic or another material. Ceramic has the advantage of having low electrical losses at microwave frequencies.
- the electrically-conductive material is typically gold, another electrically-conductive material.
- the layer of electrically-conducting material may be composed of two or more layers of different materials.
- Connection pads 682 and 686, attachment pads 641 and 643, electrical traces 661 and 663 and annular pad 619 are defined in the electrically-conducting layer using a suitable process such as photolithography and etching or a lift-off process.
- the locations and shapes of connection pads 682 and 686 and the location and shape of annular pad 61 9 on auxiliary substrate 611 respectively correspond to the locations and cross- sectional shapes of interconnection posts 672 and 676 and the location and shape of gasket 607 on substrate 602.
- the shape of connection pads 682 and 686 may differ from the cross-sectional shape of interconnection posts 672 and 676, respectively.
- Surface-mount inductor 613 is mounted on attachment pads 641 and 643 using a conventional surface-mount attachment technique.
- the capacitor is additionally mounted on its respective attachment pads.
- the inductor 180 is embodied as a spiral or serpentine trace defined in the electrically-conductive layer deposited on auxiliary substrate 611 , no inductor mounting process is performed.
- Auxiliary substrate 611 is inverted and is disposed opposite substrate 602 with annular pad 619 and attachment pads
- Auxiliary substrate 611 is then pressed against and bonded to substrate 602. Pressing the substrates together puts interconnection posts 672 and 676 in contact with connection pads 682 and 686, respectively, and puts gasket 607 in contact with annular pad 619. As the substrates are pressed together, the compliant material of the interconnection posts enables the interconnection posts to deform without fracturing or otherwise failing, and the compliant material of gasket 607 enables the gasket to deform without fracturing or otherwise failing.
- substrates 602 and 611 are bonded while being pressed together. Various known or future-developed bonding techniques may be used to bond substrates 602 and 611.
- thermal compression bonding is used.
- the electrically conductive material used to coat interconnection posts 672 and 676 and gasket 607 is gold (Au).
- Au gold
- a layer of tin (Sn) is deposited on the gold-coated interconnection posts and gasket.
- Substrates 602 and 611 are then pressed together until interconnection posts 672 and 676 and gasket 607 make intimate contact with connection pads 682 and 686 and annular pad 619, respectively, and the assembly is heated until the gold and tin coating on the interconnection posts and gasket begins to melt. At this point, the coating material adheres to the material of annular pad 619 and connection pads 682 and 686. The assembly is then allowed to cool.
- the molten coating material solidifies as the assembly cools, and the solidified material forms a bond between connection pads 682 and 686 and interconnection posts 672 and 676, respectively, and between gasket 607 and annular pad 619.
- the additional layer of tin on the gold-coated interconnection posts and gasket helps form a stronger bond during the thermal compression bonding.
- the compliant materials of interconnection posts 672 and 676 and gasket 607 ensure that interconnection posts 672 and 676 and gasket 607 on substrate 611 intimately contact connection pads 682 and 686 and annular pad 619 on auxiliary substrate 611.
- interconnection posts 672 and 676 and gasket 607 allow interconnection posts 672 and 676 and gasket 607 to deform until interconnection posts 672 and 676 form a low-resistance electrical contact with connection pads 682 and 686, respectively, and gasket 607 contacts annular pad 619 along its entire periphery.
- gasket 607 deforms to allow the substrates 602 and 611 to be further pressed together until the interconnection posts makes intimate contact with their respective contact pads.
- interconnection posts 672 and 676 or portions of gasket 607 may deform to allow the entire periphery of the gasket to make intimate physical contact with annular pad 619. Intimate physical contact between the interconnection posts and their respective contact pads and between the gasket and annular pad 619 during bonding helps to ensure that the interconnection posts provides a reliable, low-impedance electrical conduction between electrodes 114 and 112 and inductor 613 and that gasket 607 provides a reliable hermetic seal for the chamber bounded by substrates 602 and 611 and gasket 607.
- FACT 600 is used by mounting it on the printed circuit board of a host electronic device using the terminal pads, such as terminal pads 631 , 632, 636 and 638 on the major surface 615 of substrate 602.
- terminal pads such as terminal pads 631 , 632, 636 and 638 on the major surface 615 of substrate 602.
- an additional interconnection post (not shown) is located on bonding pad 172 to provide an electrical connection to auxiliary substrate 611 from electrode 154.
- connection pad (not shown) corresponding to the additional interconnection post and mounting pads for mounting an additional surface-mount inductor (and an optional additional isolation capacitor) are defined in the conductive layer of auxiliary substrate 611.
- An additional electrical trace (not shown) connects the other end of the additional inductor to connection pad 686 directly or via the additional isolation capacitor.
- Figures 9A and 9B are respectively a plan view and a cross-sectional view along the section line 9B-9B in Figure
- FACT 700 a film acoustically-coupled transformer (FACT) with increased CMRR in accordance with the invention.
- FACT 700 an inductor is connected between electrodes 114 and 122 in an arrangement similar to that shown in Figure 2A.
- the inductor is located on the substrate that forms part of an embodiment of FACT module 400 described above with reference to Figures 4A-4C.
- Elements of FACT 700 that correspond to FACT module 400 described above with reference to Figures 4A-4C are indicated using the same reference numerals and will not be described again here.
- FACT 700 is composed of an embodiment 701 of FACT module 400 described above with reference to Figures 4A-4C.
- substrate 702 is extended in the -x-direction relative to the substrate 102 of the embodiment of FACT module 400.
- Piezoelectric layer 717 and acoustic decoupling layer 731 additionally extend over the extended portion of substrate 702.
- Inductor 180 ( Figure 2A) is embodied as a spiral inductor 713 defined in a conductive layer located on the surface of acoustic decoupling layer 731.
- An electrical trace 763 extends in the -x-direction over the major surface of piezoelectric layer 717 from electrode 114 to an interconnection pad 741.
- Acoustic decoupling layer 731 covers trace 763, but a window 733 defined in acoustic decoupling layer 731 provides access to interconnection pad 741.
- Spiral inductor 713 is structured as a spiral trace 714 located on the surface of acoustic decoupling layer 731.
- An interconnection pad 743 that electrically contacts interconnection pad 741 through window 733 is located at the inner end of spiral trace 714.
- An electrical trace 761 extends in the -x-direction over the surface of acoustic decoupling layer 731 from electrode 122 to the outer end of spiral trace 714.
- Figures 10A and 10B are respectively a plan view and a cross-sectional view along the section line 10B- 10B in Figure 10A of a sixth practical embodiment 704 of a film acoustically-coupled transformer (FACT) with increased CMRR in accordance with the invention.
- FACT film acoustically-coupled transformer
- FACT 704 an inductor and a capacitor are connected in series between electrodes 114 and 122 in an arrangement similar to that shown in Figure 3A.
- the capacitor and the inductor are located on the substrate that forms part of an embodiment of FACT module 400 described above with reference to Figures 4A-4C.
- Elements of FACT 700 that correspond to FACT module 400 described above with reference to Figures 4A-4C and FACT 700 described above with reference to Figures 9A and 9B are indicated using the same reference numerals and will not be described again here.
- FACT 704 is composed of the above-described embodiment 701 of FACT module 400 in which substrate 702 is extended in the -x-direction and piezoelectric layer 717 and acoustic decoupling layer 731 extend over the extended portion of substrate 702.
- Inductor 180 ( Figure 3A) is embodied as a spiral inductor 713 defined in a conductive layer located on the surface of acoustic decoupling layer 731.
- Capacitor 184 ( Figure 3A) is embodied as a parallel-plate capacitor 715 having part of acoustic decoupling layer 731 as its dielectric.
- One plate 718 of parallel-plate capacitor 715 is located on the major surface of piezoelectric layer 717.
- An electrical trace 763 extends in the -x-direction over the major surface of piezoelectric layer 717 from electrode 114 to plate 718.
- An electrical trace 765 extends at about 45 degrees to the x-direction over the major surface of piezoelectric layer 717 from an interconnection pad 745 located outside plate 718 to interconnection pad 741 located at the center of spiral inductor 713.
- Acoustic decoupling layer 731 covers trace 763, trace 765 and plate 718, but window 733 and a window 735 defined in acoustic decoupling layer 731 provide access to interconnection pad 741 and interconnection pad 745, respectively.
- the other plate 719 of capacitor 715 and spiral inductor 713 are located on the major surface of acoustic decoupling layer 731.
- Spiral inductor 71 3 is structured as spiral trace 714 located on the major surface of acoustic decoupling layer 731.
- An electrical trace 761 extends on over the surface of acoustic decoupling layer 731 from electrode 122 to the outer end of spiral trace 714.
- Interconnection pad 743 that electrically contacts interconnection pad 741 through window 733 is located at the inner end of spiral trace 714.
- An electrical trace 767 extends in the y-direction over the major surface of acoustic decoupling layer 731 from plate 719 to interconnection pad 747.
- Interconnection pad 747 electrically contacts interconnection pad 745 through window 735 to complete the series conn ection of inductor 713 and capacitor 715 between electrodes 114 and 122.
- cavity 104 is extended so that it additionally underlies spiral inductor 713. This increases the separation between the inductor and the material of substrate 702, which reduces electrical losses.
- substrate 702, piezoelectric layer 717 and acoustic decoupling layer 731 are additionally extended in the +x-direction (not shown).
- An additional spiral inductor is located on the additional extension of the substrate in the +x-direction and is connected between electrodes 154 and 162 as shown in Figure 2B.
- an additional spiral inductor connected in series with an additional parallel-plate capacitor are located on the additional extension of the substrate in the -t-x-direction and are connected between electrodes 154 and 162 as shown in Figure 3B.
- a process that can be used to fabricate FACT 704 described above with reference to Figures 10A and 10B will be described next with reference to the plan views of Figures 11 A-11 H and the cross-sectional views of Figures 111-11 P.
- the pass band of the embodiment of FACT 704 whose fabrication will be described has a nominal center frequency of about 1.9 GHz.
- Embodiments for operation at other frequencies are similar in structure and fabrication but will have thicknesses and lateral dimensions different from those exemplified below.
- the process may be also be used to fabricate embodiments of the FACT 700 described above with reference to Figures 9A and 9B and the various embodiments of the FACT module 400 primarily described above with reference to Figures 4A- 4C.
- Thousands of FACTs similar to FACT 704 are fabricated at a time by wafer-scale fabrication. Such wafer-scale fabrication makes the FACTs inexpensive to fabricate.
- a wafer of single-crystal silicon is provided. A portion of the wafer constitutes, for each FACT being fabricated, a substrate corresponding to the substrate 702 of FACT 704.
- Figures 11A-11 H and Figures 11I-11 P illustrate, and the following description describes, the fabrication of FACT 704 in and on a portion of the wafer.
- FACT 704 As FACT 704 is fabricated, the other FACTs on the wafer are similarly fabricated.
- the portion of the wafer that constitutes the substrate 702 of FACT 704 is selectively wet etched to form a cavity.
- a layer of fill material (not shown) is deposited on the surface of the wafer with a thickness sufficient to fill each cavity.
- the surface of the wafer is then planarized, leaving each cavity filled with fill material.
- Figures 11 A and 111 show cavity 104 in substrate 702 filled with fill material 105.
- the fill material was phosphosilicate glass (PSG) and was deposited using conventional low- pressure chemical vapor deposition (LPCVD).
- the fill material may alternatively be deposited by sputtering or by spin coating.
- a first metal layer is deposited on the surface of substrate 702 and fill material 105.
- the first metal layer is patterned as shown in Figures 11 B and 11 J to define electrode 112, electrode 152, bonding pad 132, bonding pad 138 and interconnection pad 176.
- the patterning also defines in the first metal layer electrical trace 133 extending between electrode 112 and bonding pad 132, electrical trace 177 extending between electrode 152 and interconnection pad 177, and electrical trace 139 extending between interconnection pad 176 and bonding pad 138.
- Electrode 112 and electrode 152 typically have an asymmetrical shape in a plane parallel to the major surface of the wafer. An asymmetrical shape minimizes lateral modes in FBAR 110 and FBAR 150 ( Figure 2A) of which the electrodes form part.
- Electrode 1 12 and electrode 152 leave part of the surface of fill material 105 exposed so that the fill material can later be removed by etching, as will be described below.
- electrodes 114 and 154 are defined in a second metal layer
- electrodes 122 and 162 are defined in a third metal layer
- electrodes 124 and 164 are defined in a fourth metal layer, as will be described below.
- electrodes 112 and 1 14 of FBAR 110 have the same shape, size, orientation and position
- electrodes 122 and 124 of FBAR 120 have the same shape, size, orientation and position
- electrodes 152 and 154 of FBAR 150 have the same shape, size, orientation and position
- electrodes 162 and 164 of FBAR 160 have the same shape, size, orientation and position.
- electrodes 114 and 122 additionally have the same shape, size, orientation and position
- electrodes 154 and 162 additionally have the same shape, size, orientation and position.
- the material of each of the metal layers was molybdenum deposited by sputtering to a thickness of about 300 nm.
- the electrodes defined in each of the metal layers were pentagonal each with an area of about 12,000 square ⁇ m. Other electrode areas give other characteristic impedances.
- Other refractory metals such as tungsten, niobium and titanium may alternatively be used as the material of the metal layers.
- the metal layers may each alternatively comprise layers of more than one material.
- One factor to be considered in choosing the material of the electrodes of FACT 704 is the acoustic properties of the electrode material: the acoustic properties of the material(s) of the remaining metal parts of FACT 704 are less important than other properties such as electrical conductivity.
- material(s) of the remaining metal parts of FACT 704 may be different from the material of the electrodes.
- a layer of piezoelectric material is deposited and is patterned as shown in Figures 11 C and 11 K to define a piezoelectric layer 717 that provides piezoelectric element 116 of FBAR 110 and piezoelectric element 156 of FBAR
- Piezoelectric layer 717 extends over substrate 702 beyond the extent of cavity 104 to provide support for spiral inductor 713 and capacitor 715. Piezoelectric layer 717 is patterned to expose part of the surface of fill material 105, bonding pads 132 and 138 and interconnection pad 176. Piezoelectric layer 717 is additionally patterned to define windows 119 that provide access to additional parts of the surface of the fill material.
- the piezoelectric material deposited to form piezoelectric layer 717 and piezoelectric layer 727 described below was aluminum nitride deposited by sputtering to a thickness of about 1.4 Qm. The piezoelectric material was patterned by wet etching in potassium hydroxide or by chlorine-based dry etching.
- piezoelectric layers include zinc oxide, cadmium sulfide and poled ferroelectric materials such as perovskite ferroelectric materials, including lead zirconium titanate, lead meta niobate and barium titanate.
- a second metal layer is deposited on piezoelectric layer 717 and is patterned as shown in Figures 11 D and 11 L to define electrode 114, electrode 154, plate 718 of capacitor 715 ( Figure 10A), bonding pad 172, interconnection pad 136 in electrical contact with interconnection pad 176, and interconnection pads 741 and 745.
- the patterning additionally defines in the second metal layer electrical trace 137 extending between electrode 114 and interconnection pad 136, electrical trace 173 extending between electrode 154 and bonding pad 172, electrical trace
- a layer of acoustic decoupling material is then deposited and is patterned as shown in Figures 11 E and 11 M to define acoustic decoupling layer 731 that provides acoustic decoupler 130 and acoustic decoupler 170. Acoustic decoupling layer 731 extends over substrate 702 beyond the extent of cavity 104 to provide the dielectric of capacitor
- Acoustic decoupling layer 731 is patterned to cover at least electrode 114 and electrode 154, and to expose part of the surface of fill material 105, bonding pads 132, 138 and 172, and interconnection pads 136 and 176. Acoustic decoupling layer 731 is additionally patterned to define windows 119 that provide access to additional parts of the surface of the fill material, and to define windows 733 and 735 that provide access to interconnection pads 741 and 745, respectively.
- the acoustic decoupling material was polyimide with a thickness of about 200 nm, i.e., one quarter of the center frequency wavelength in the polyimide.
- the polyimide was deposited to form acoustic decoupling layer 731 by spin coating, and was patterned by photolithography. Polyimide is photosensitive so that no photoresist is needed. As noted above, other plastic materials can be used as the acoustic decoupling material.
- the acoustic decoupling material can be deposited by methods other than spin coating. In an embodiment in which the acoustic decoupling material was polyimide, after depositing and patterning the polyimide, the wafer was baked initially at a temperature of about 250 °C in air and finally at a temperature of about 415 °C in an inert atmosphere, such as a nitrogen atmosphere, before further processing was performed.
- a third metal layer is deposited on acoustic decoupling layer 731 and is patterned as shown in Figures 11 F and
- electrode 11 N to define electrode 122, electrode 162, spiral trace 714 constituting spiral inductor 713, plate 719 of capacitor 715 ( Figure 10A), bonding pad 178, interconnection pad 743 at the inner end of spiral trace 714 in electrical contact with interconnection pad 741 and interconnection pad 747 in electrical contact with interconnection pad 745.
- the patterning also defines in the third metal layer electrical trace 171 extending between electrode 122 and electrode 162, electrical trace 179 extending between electrical trace 171 and bonding pad 178, electrical trace 761 extending between electrode 122 and the outer end of spiral trace 714, and electrical trace 767 extending between plate 719 and interconnection pad 747.
- a layer of piezoelectric material is deposited and is patterned as shown in Figures 11 G and 110 to define piezoelectric layer 727 that provides piezoelectric element 126 of FBAR 120 and piezoelectric element 166 of FBAR
- Piezoelectric layer 727 is patterned to expose inductor 713, capacitor 715, bonding pads 132, 138, 178 and 172, interconnection pads 136 and 176 and part of the surface of fill material 105. Piezoelectric layer 727 is additionally patterned to define the windows 1 19 that provide access to additional parts of the surface of the fill material.
- a fourth metal layer is deposited and is patterned as shown in Figures 11 H and 11 P to define electrode 124, electrode 164, bonding pad 163, bonding pad 134, bonding pad 174 and bonding pad 168.
- the patterning also defines in the fourth metal layer electrical trace 135 extending from electrode 124 to bonding pad 134, electrical trace 175 extending from electrode 164 to bonding pad 174, and electrical trace 169 extending from bonding pad 163 and bonding pad 168 to bonding pad 178.
- the wafer is then isotropically wet etched to remove fill material 105 from cavity 104. As noted above, portions of the surface of fill material 105 remain exposed through, for example, windows 119. The etch process leaves FACT 704 suspended over cavity 104, as shown in Figures 10A and 10B.
- the etchant used to remove fill material 105 was dilute hydrofluoric acid.
- a gold protective layer is deposited on the exposed surfaces of bonding pads 172, 138, 132, 163, 134, 178, 174 and 168.
- the wafer is then divided into individual FACTs, including FACT 704.
- Each FACT is then mounted in a package and electrical connections are made between bonding pads 172, 132, 163, 134, 178, 174 and 168 of the FACT and pads that are part of the package.
- FACT 704 is packaged in a hermetic package similar to that described above with reference to Figures 8A-8E. However, components different from inductor 180 and, optionally, capacitor 184 are mounted on the surface of the auxiliary substrate.
- the acoustic decoupling material of acoustic decoupling layer 731 is a crosslinked polyphenylene polymer
- the precursor solution for the crosslinked polyphenylene polymer is spun on in a manner similar to that described above with reference to Figure 1 1 E and 11 M, but is not patterned.
- the formulation of the crosslinked polyphenylene polymer and the spin speed are selected so that the crosslinked polyphenylene polymer forms a layer with a thickness of about 187 nm.
- the wafer is then baked at a temperature in the range from about 385 °C to about 450 °C in an inert ambient, such as under vacuum or in a nitrogen atmosphere, before further processing is performed.
- the bake first drives off the organic solvents from the precursor solution, and then causes the oligomer to cross link as described above to form the crosslinked polyphenylene polymer.
- the third metal layer is then deposited on the layer of crosslinked polyphenylene polymer in a manner similar to that described above with reference to Figure 11 F, but is initially patterned in a manner similar to that shown in Figure
- the initially-patterned third metal layer has the same extent as acoustic decoupling layer 731 and has windows in the following locations: over part of the surface of fill material 105, over bonding pads 132, 138 and 172, and in the intended locations of windows 1 19, 733 and 735 in acoustic decoupling layer 731.
- the layer of crosslinked polyphenylene polymer is then patterned as shown in Figure 11 E with the initially- patterned third metal layer as a hard etch mask.
- the patterning defines the following features in the layer of crosslinked polyphenylene polymer: the extent of acoustic decoupling layer 731 , windows that provide access to part of the surface of fill material 105 and to bonding pads 132, 138 and 172, windows 733 and 735 that provide access to interconnection pads 741 and 745, respectively, and windows 119 that provide access to additional parts of the surface of the fill material.
- the patterning is performed with an oxygen plasma etch.
- the third metal layer is then re-patterned as shown in Figures 11 F and 11 N to define electrode 122, electrode 162, spiral trace 714 constituting spiral inductor 713, plate 719 of capacitor 715 ( Figure 10A), bonding pad 178, interconnection pad 743 at the inner end of spiral trace 714 in electrical contact with interconnection pad 741 and interconnection pad 747 in electrical contact with interconnection pad 745.
- the re-patterning also defines in the third metal layer electrical trace 171 extending between electrode 122 and electrode 162, electrical trace 179 extending between electrical trace 171 and bonding pad 1 78, electrical trace 761 extending between electrode 122 and the outer end of spiral trace 714, and electrical trace 767 extending between plate 719 and interconnection pad 747.
- Fabrication of the embodiment of FACT 704 with an acoustic decoupling layer of crosslinked polyphenylene polymer is completed by performing the processing described above with reference to Figures 11 G, 11 H, 110 and 11 P.
- the precursor solution for the crosslinked polyphenylene polymer was one sold by The Dow
- the precursor solution may be any suitable one of the precursor solutions sold by The Dow Chemical Company under the trademark SiLK.
- a layer of an adhesion promoter was deposited before the precursor solution was spun on.
- Precursor solutions containing oligomers that, when cured, form a crosslinked polyphenylene polymer having an acoustic impedance of about 2 Mrayl may be available from other suppliers now or in the future and may also be used.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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GB0605770A GB2422059B (en) | 2003-10-30 | 2004-10-29 | Film acoustically-coupled transformer with increased common mode rejection |
DE112004002038T DE112004002038B4 (en) | 2003-10-30 | 2004-10-29 | Acoustically coupled film transformer with increased common-mode rejection |
JP2006538339A JP4796501B2 (en) | 2003-10-30 | 2004-10-29 | Thin film acoustic coupling transformer with increased common mode rejection. |
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US10/699,481 | 2003-10-30 | ||
US10/699,481 US6946928B2 (en) | 2003-10-30 | 2003-10-30 | Thin-film acoustically-coupled transformer |
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PCT/US2004/035906 WO2005046052A1 (en) | 2003-10-30 | 2004-10-29 | Impedance transformation ratio control in film acoustically-coupled transformers |
PCT/US2004/036089 WO2005043752A1 (en) | 2003-10-30 | 2004-10-29 | Film acoustically-coupled transformer with increased common mode rejection |
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US (5) | US6946928B2 (en) |
EP (1) | EP1528675B1 (en) |
JP (3) | JP4648680B2 (en) |
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