WO2005043599A3 - Electron beam treatment apparatus - Google Patents

Electron beam treatment apparatus Download PDF

Info

Publication number
WO2005043599A3
WO2005043599A3 PCT/US2004/036406 US2004036406W WO2005043599A3 WO 2005043599 A3 WO2005043599 A3 WO 2005043599A3 US 2004036406 W US2004036406 W US 2004036406W WO 2005043599 A3 WO2005043599 A3 WO 2005043599A3
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
cathode
anode
voltage
working distance
Prior art date
Application number
PCT/US2004/036406
Other languages
French (fr)
Other versions
WO2005043599A2 (en
Inventor
Alexander T Demos
Hari K Ponnekanti
Jun Zhao
Helen R Armer
Original Assignee
Applied Materials Inc
Alexander T Demos
Hari K Ponnekanti
Jun Zhao
Helen R Armer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Alexander T Demos, Hari K Ponnekanti, Jun Zhao, Helen R Armer filed Critical Applied Materials Inc
Priority to JP2006538427A priority Critical patent/JP5242055B2/en
Priority to CN2004800316668A priority patent/CN1875452B/en
Publication of WO2005043599A2 publication Critical patent/WO2005043599A2/en
Publication of WO2005043599A3 publication Critical patent/WO2005043599A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/025—Electron guns using a discharge in a gas or a vapour as electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/067—Replacing parts of guns; Mutual adjustment of electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/077—Electron guns using discharge in gases or vapours as electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube

Abstract

One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode (122) having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode (126) having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder (130) disposed inside the chamber facing the anode; (e) a source of negative voltage (129) whose output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode (131); (g) a gas inlet (129) adapted to admit gas into the chamber at an introduction rate; and (h) a pump (139) adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.
PCT/US2004/036406 2003-10-30 2004-10-29 Electron beam treatment apparatus WO2005043599A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006538427A JP5242055B2 (en) 2003-10-30 2004-10-29 Operation method of electron beam processing apparatus
CN2004800316668A CN1875452B (en) 2003-10-30 2004-10-29 Electron beam treatment apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/698,726 US7049606B2 (en) 2003-10-30 2003-10-30 Electron beam treatment apparatus
US10/698,726 2003-10-30

Publications (2)

Publication Number Publication Date
WO2005043599A2 WO2005043599A2 (en) 2005-05-12
WO2005043599A3 true WO2005043599A3 (en) 2005-07-14

Family

ID=34550733

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/036406 WO2005043599A2 (en) 2003-10-30 2004-10-29 Electron beam treatment apparatus

Country Status (6)

Country Link
US (1) US7049606B2 (en)
JP (1) JP5242055B2 (en)
KR (1) KR101068790B1 (en)
CN (1) CN1875452B (en)
TW (1) TWI318416B (en)
WO (1) WO2005043599A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10320597A1 (en) * 2003-04-30 2004-12-02 Aixtron Ag Method and device for depositing semiconductor layers with two process gases, one of which is preconditioned
EP2080014B1 (en) 2006-10-24 2016-08-31 B-Nano Ltd. An interface, a method for observing an object within a non-vacuum environment and a scanning electron microscope
KR100895630B1 (en) * 2007-10-01 2009-05-06 박흥균 Electron Beam Source
US8981294B2 (en) 2008-07-03 2015-03-17 B-Nano Ltd. Scanning electron microscope, an interface and a method for observing an object within a non-vacuum environment
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
JP2016513349A (en) 2013-02-20 2016-05-12 ビー−ナノ リミテッド Scanning electron microscope
KR102118604B1 (en) * 2018-12-14 2020-06-03 박흥균 Line Type Ion Beam Emission Device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212059A (en) * 1985-07-10 1987-01-21 Matsushita Electric Works Ltd Luminous radiation electron tube
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
US5003178A (en) * 1988-11-14 1991-03-26 Electron Vision Corporation Large-area uniform electron source
US6429445B1 (en) * 1999-08-16 2002-08-06 Samsung Electronics Co., Ltd. Electron beam irradiating apparatus having cathode plate formed of non-metal conductive material

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Publication number Priority date Publication date Assignee Title
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
US5094885A (en) * 1990-10-12 1992-03-10 Genus, Inc. Differential pressure cvd chuck
US5421888A (en) * 1992-05-12 1995-06-06 Sony Corporation Low pressure CVD apparatus comprising gas distribution collimator
US5302238A (en) * 1992-05-15 1994-04-12 Micron Technology, Inc. Plasma dry etch to produce atomically sharp asperities useful as cold cathodes
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
US6607991B1 (en) * 1995-05-08 2003-08-19 Electron Vision Corporation Method for curing spin-on dielectric films utilizing electron beam radiation
JPH11176765A (en) * 1997-12-05 1999-07-02 Samsung Electron Co Ltd Method of forming shallow junction with suppressed ion implantation damage
US6037717A (en) * 1999-01-04 2000-03-14 Advanced Ion Technology, Inc. Cold-cathode ion source with a controlled position of ion beam
US6214183B1 (en) * 1999-01-30 2001-04-10 Advanced Ion Technology, Inc. Combined ion-source and target-sputtering magnetron and a method for sputtering conductive and nonconductive materials
JP2001023959A (en) * 1999-07-05 2001-01-26 Mitsubishi Electric Corp Plasma processing apparatus
US6407399B1 (en) * 1999-09-30 2002-06-18 Electron Vision Corporation Uniformity correction for large area electron source
JP2002190260A (en) * 2000-10-13 2002-07-05 Toshiba Corp Cathode-ray tube device
US20040089535A1 (en) * 2002-08-16 2004-05-13 The Regents Of The University Of California. Process and apparatus for pulsed dc magnetron reactive sputtering of thin film coatings on large substrates using smaller sputter cathodes
US6831284B2 (en) * 2002-11-21 2004-12-14 Applied Materials, Inc. Large area source for uniform electron beam generation
EP1617994B1 (en) * 2003-04-21 2017-03-01 Rynel, Inc. Methods for the attachment of materials to polyurethane foam, and articles made using them

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212059A (en) * 1985-07-10 1987-01-21 Matsushita Electric Works Ltd Luminous radiation electron tube
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
US5003178A (en) * 1988-11-14 1991-03-26 Electron Vision Corporation Large-area uniform electron source
US6429445B1 (en) * 1999-08-16 2002-08-06 Samsung Electronics Co., Ltd. Electron beam irradiating apparatus having cathode plate formed of non-metal conductive material

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 011, no. 179 (E - 514) 9 June 1987 (1987-06-09) *

Also Published As

Publication number Publication date
JP2007510311A (en) 2007-04-19
JP5242055B2 (en) 2013-07-24
CN1875452A (en) 2006-12-06
KR20060122875A (en) 2006-11-30
WO2005043599A2 (en) 2005-05-12
KR101068790B1 (en) 2011-09-30
US20050092935A1 (en) 2005-05-05
CN1875452B (en) 2010-06-16
US7049606B2 (en) 2006-05-23
TW200515461A (en) 2005-05-01
TWI318416B (en) 2009-12-11

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