WO2005043599A3 - Electron beam treatment apparatus - Google Patents
Electron beam treatment apparatus Download PDFInfo
- Publication number
- WO2005043599A3 WO2005043599A3 PCT/US2004/036406 US2004036406W WO2005043599A3 WO 2005043599 A3 WO2005043599 A3 WO 2005043599A3 US 2004036406 W US2004036406 W US 2004036406W WO 2005043599 A3 WO2005043599 A3 WO 2005043599A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chamber
- cathode
- anode
- voltage
- working distance
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/025—Electron guns using a discharge in a gas or a vapour as electron source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/067—Replacing parts of guns; Mutual adjustment of electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/077—Electron guns using discharge in gases or vapours as electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/248—Components associated with the control of the tube
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2004800316668A CN1875452B (en) | 2003-10-30 | 2004-10-29 | Electron beam treatment apparatus |
JP2006538427A JP5242055B2 (en) | 2003-10-30 | 2004-10-29 | Operation method of electron beam processing apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/698,726 US7049606B2 (en) | 2003-10-30 | 2003-10-30 | Electron beam treatment apparatus |
US10/698,726 | 2003-10-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005043599A2 WO2005043599A2 (en) | 2005-05-12 |
WO2005043599A3 true WO2005043599A3 (en) | 2005-07-14 |
Family
ID=34550733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/036406 WO2005043599A2 (en) | 2003-10-30 | 2004-10-29 | Electron beam treatment apparatus |
Country Status (6)
Country | Link |
---|---|
US (1) | US7049606B2 (en) |
JP (1) | JP5242055B2 (en) |
KR (1) | KR101068790B1 (en) |
CN (1) | CN1875452B (en) |
TW (1) | TWI318416B (en) |
WO (1) | WO2005043599A2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10320597A1 (en) * | 2003-04-30 | 2004-12-02 | Aixtron Ag | Method and device for depositing semiconductor layers with two process gases, one of which is preconditioned |
US8164057B2 (en) * | 2006-10-24 | 2012-04-24 | Dov Shachal | Interface, a method for observing an object within a non-vacuum environment and a scanning electron microscope |
KR100895630B1 (en) * | 2007-10-01 | 2009-05-06 | 박흥균 | Electron Beam Source |
US8981294B2 (en) | 2008-07-03 | 2015-03-17 | B-Nano Ltd. | Scanning electron microscope, an interface and a method for observing an object within a non-vacuum environment |
US10658161B2 (en) * | 2010-10-15 | 2020-05-19 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
WO2014128699A1 (en) | 2013-02-20 | 2014-08-28 | B-Nano Ltd. | Scanning electron microscope |
KR102118604B1 (en) * | 2018-12-14 | 2020-06-03 | 박흥균 | Line Type Ion Beam Emission Device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6212059A (en) * | 1985-07-10 | 1987-01-21 | Matsushita Electric Works Ltd | Luminous radiation electron tube |
US4721885A (en) * | 1987-02-11 | 1988-01-26 | Sri International | Very high speed integrated microelectronic tubes |
US5003178A (en) * | 1988-11-14 | 1991-03-26 | Electron Vision Corporation | Large-area uniform electron source |
US6429445B1 (en) * | 1999-08-16 | 2002-08-06 | Samsung Electronics Co., Ltd. | Electron beam irradiating apparatus having cathode plate formed of non-metal conductive material |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4581118A (en) * | 1983-01-26 | 1986-04-08 | Materials Research Corporation | Shaped field magnetron electrode |
US5094885A (en) * | 1990-10-12 | 1992-03-10 | Genus, Inc. | Differential pressure cvd chuck |
US5421888A (en) * | 1992-05-12 | 1995-06-06 | Sony Corporation | Low pressure CVD apparatus comprising gas distribution collimator |
US5302238A (en) * | 1992-05-15 | 1994-04-12 | Micron Technology, Inc. | Plasma dry etch to produce atomically sharp asperities useful as cold cathodes |
US5350480A (en) * | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
US6607991B1 (en) * | 1995-05-08 | 2003-08-19 | Electron Vision Corporation | Method for curing spin-on dielectric films utilizing electron beam radiation |
JPH11176765A (en) * | 1997-12-05 | 1999-07-02 | Samsung Electron Co Ltd | Method of forming shallow junction with suppressed ion implantation damage |
US6037717A (en) * | 1999-01-04 | 2000-03-14 | Advanced Ion Technology, Inc. | Cold-cathode ion source with a controlled position of ion beam |
US6214183B1 (en) * | 1999-01-30 | 2001-04-10 | Advanced Ion Technology, Inc. | Combined ion-source and target-sputtering magnetron and a method for sputtering conductive and nonconductive materials |
JP2001023959A (en) * | 1999-07-05 | 2001-01-26 | Mitsubishi Electric Corp | Plasma processing apparatus |
US6407399B1 (en) * | 1999-09-30 | 2002-06-18 | Electron Vision Corporation | Uniformity correction for large area electron source |
JP2002190260A (en) * | 2000-10-13 | 2002-07-05 | Toshiba Corp | Cathode-ray tube device |
US20040089535A1 (en) * | 2002-08-16 | 2004-05-13 | The Regents Of The University Of California. | Process and apparatus for pulsed dc magnetron reactive sputtering of thin film coatings on large substrates using smaller sputter cathodes |
US6831284B2 (en) * | 2002-11-21 | 2004-12-14 | Applied Materials, Inc. | Large area source for uniform electron beam generation |
EP1617994B1 (en) * | 2003-04-21 | 2017-03-01 | Rynel, Inc. | Methods for the attachment of materials to polyurethane foam, and articles made using them |
-
2003
- 2003-10-30 US US10/698,726 patent/US7049606B2/en not_active Expired - Fee Related
-
2004
- 2004-10-29 CN CN2004800316668A patent/CN1875452B/en not_active Expired - Fee Related
- 2004-10-29 JP JP2006538427A patent/JP5242055B2/en active Active
- 2004-10-29 TW TW093133114A patent/TWI318416B/en not_active IP Right Cessation
- 2004-10-29 WO PCT/US2004/036406 patent/WO2005043599A2/en active Application Filing
- 2004-10-29 KR KR1020067010458A patent/KR101068790B1/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6212059A (en) * | 1985-07-10 | 1987-01-21 | Matsushita Electric Works Ltd | Luminous radiation electron tube |
US4721885A (en) * | 1987-02-11 | 1988-01-26 | Sri International | Very high speed integrated microelectronic tubes |
US5003178A (en) * | 1988-11-14 | 1991-03-26 | Electron Vision Corporation | Large-area uniform electron source |
US6429445B1 (en) * | 1999-08-16 | 2002-08-06 | Samsung Electronics Co., Ltd. | Electron beam irradiating apparatus having cathode plate formed of non-metal conductive material |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 011, no. 179 (E - 514) 9 June 1987 (1987-06-09) * |
Also Published As
Publication number | Publication date |
---|---|
CN1875452A (en) | 2006-12-06 |
JP5242055B2 (en) | 2013-07-24 |
CN1875452B (en) | 2010-06-16 |
TWI318416B (en) | 2009-12-11 |
US20050092935A1 (en) | 2005-05-05 |
KR20060122875A (en) | 2006-11-30 |
US7049606B2 (en) | 2006-05-23 |
JP2007510311A (en) | 2007-04-19 |
WO2005043599A2 (en) | 2005-05-12 |
KR101068790B1 (en) | 2011-09-30 |
TW200515461A (en) | 2005-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE0302045D0 (en) | Work piece processing by pulsed electric discharges in solid-gas plasmas | |
SE0501602L (en) | Plasma generating device, plasma surgical device, use of a plasma surgical device and method for forming a plasma | |
SE0102134D0 (en) | Plasma generation method and apparatus | |
AU5144399A (en) | Apparatus and method for atmospheric pressure 3-dimensional ion trapping | |
ATE310318T1 (en) | PLASMA SYSTEM WORKING AT ATMOSPHERIC PRESSURE | |
EP2372743A3 (en) | Charged particle beam system with an ion generator | |
ATE505285T1 (en) | DEVICE FOR GENERATING A NEGATIVELY CHARGED REDUCING ION GAS | |
DE60221535D1 (en) | TWO-FREQUENCY PLASMA RATE REACTOR WITH INDEPENDENT CONTROL FOR DENSITY, CHEMICAL AND ION ENERGY | |
ATE518409T1 (en) | APPARATUS AND PROCESS FOR GENERATING, ACCELERATING AND SPREADING BEAMS OF ELECTRONS AND PLASMA | |
EP1286382A3 (en) | Atmospheric pressure plasma treatment apparatus and method | |
WO2003009363A1 (en) | Plasma processor and plasma processing method | |
ATE511206T1 (en) | CHARGE CARRIER PARTICLE BEAM SYSTEM | |
CA2333721A1 (en) | Pulsed ion source for ion trap mass spectrometer | |
WO2002078042A3 (en) | Neutral particle beam processing apparatus | |
SG144714A1 (en) | Removal of surface oxides by electron attachment for wafer bumping applications | |
WO2002015236A3 (en) | Wafer area pressure control | |
RU2009119420A (en) | METHOD AND DEVICE FOR PRODUCING POSITIVE AND / OR NEGATIVELY IONIZED ANALYZED GASES FOR GAS ANALYSIS | |
WO2007076280A3 (en) | Side-specific treatment of textiles using plasmas | |
TW200735726A (en) | Plasma gun and plasma gun film forming apparatus provided with the same | |
ATE371950T1 (en) | DEVICE FOR GENERATING X-RAYS USING A LIQUID METAL ANODE | |
WO2002078044A3 (en) | Method of processing a surface of a workpiece | |
WO2005043599A3 (en) | Electron beam treatment apparatus | |
WO2003071004A3 (en) | Method for the plasma cleaning of the surface of a material coated with an organic substance and the installation for carrying out said method | |
TW200501346A (en) | Ion doping apparatus, ion doping method and semiconductor device | |
WO2007065896B1 (en) | Removable liners for charged particle beam systems |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200480031666.8 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2006538427 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020067010458 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 1020067010458 Country of ref document: KR |
|
122 | Ep: pct application non-entry in european phase |