WO2005038910A3 - Three-dimensional integrated circuit with integrated heat sinks - Google Patents
Three-dimensional integrated circuit with integrated heat sinks Download PDFInfo
- Publication number
- WO2005038910A3 WO2005038910A3 PCT/US2004/034499 US2004034499W WO2005038910A3 WO 2005038910 A3 WO2005038910 A3 WO 2005038910A3 US 2004034499 W US2004034499 W US 2004034499W WO 2005038910 A3 WO2005038910 A3 WO 2005038910A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- heat
- heat sinks
- integrated circuit
- dimensional
- substrates
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/0554—External layer
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- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13023—Disposition the whole bump connector protruding from the surface
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/1605—Shape
- H01L2224/16057—Shape in side view
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/161—Disposition
- H01L2224/16104—Disposition relative to the bonding area, e.g. bond pad
- H01L2224/16105—Disposition relative to the bonding area, e.g. bond pad the bump connector connecting bonding areas being not aligned with respect to each other
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/161—Disposition
- H01L2224/16108—Disposition the bump connector not being orthogonal to the surface
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
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- H01L2224/81815—Reflow soldering
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
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- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
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- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06551—Conductive connections on the side of the device
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06589—Thermal management, e.g. cooling
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
Abstract
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US51225603P | 2003-10-17 | 2003-10-17 | |
US60/512,256 | 2003-10-17 | ||
US10/965,065 | 2004-10-13 | ||
US10/965,065 US20050104027A1 (en) | 2003-10-17 | 2004-10-13 | Three-dimensional integrated circuit with integrated heat sinks |
Publications (2)
Publication Number | Publication Date |
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WO2005038910A2 WO2005038910A2 (en) | 2005-04-28 |
WO2005038910A3 true WO2005038910A3 (en) | 2005-08-11 |
Family
ID=34468025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/034499 WO2005038910A2 (en) | 2003-10-17 | 2004-10-18 | Three-dimensional integrated circuit with integrated heat sinks |
Country Status (2)
Country | Link |
---|---|
US (1) | US20050104027A1 (en) |
WO (1) | WO2005038910A2 (en) |
Families Citing this family (45)
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US8456015B2 (en) | 2005-06-14 | 2013-06-04 | Cufer Asset Ltd. L.L.C. | Triaxial through-chip connection |
US7534722B2 (en) * | 2005-06-14 | 2009-05-19 | John Trezza | Back-to-front via process |
US7687400B2 (en) * | 2005-06-14 | 2010-03-30 | John Trezza | Side stacking apparatus and method |
US7781886B2 (en) * | 2005-06-14 | 2010-08-24 | John Trezza | Electronic chip contact structure |
US7786592B2 (en) | 2005-06-14 | 2010-08-31 | John Trezza | Chip capacitive coupling |
US7560813B2 (en) * | 2005-06-14 | 2009-07-14 | John Trezza | Chip-based thermo-stack |
US20060278996A1 (en) * | 2005-06-14 | 2006-12-14 | John Trezza | Active packaging |
US20060281303A1 (en) * | 2005-06-14 | 2006-12-14 | John Trezza | Tack & fuse chip bonding |
US7215032B2 (en) * | 2005-06-14 | 2007-05-08 | Cubic Wafer, Inc. | Triaxial through-chip connection |
US7851348B2 (en) | 2005-06-14 | 2010-12-14 | Abhay Misra | Routingless chip architecture |
US20060278966A1 (en) * | 2005-06-14 | 2006-12-14 | John Trezza | Contact-based encapsulation |
US20070281460A1 (en) * | 2006-06-06 | 2007-12-06 | Cubic Wafer, Inc. | Front-end processed wafer having through-chip connections |
US7687397B2 (en) | 2006-06-06 | 2010-03-30 | John Trezza | Front-end processed wafer having through-chip connections |
CN101553903B (en) * | 2006-10-17 | 2012-08-29 | 丘费尔资产股份有限公司 | Wafer via formation |
US7705613B2 (en) * | 2007-01-03 | 2010-04-27 | Abhay Misra | Sensitivity capacitive sensor |
US7598163B2 (en) * | 2007-02-15 | 2009-10-06 | John Callahan | Post-seed deposition process |
US7705632B2 (en) * | 2007-02-15 | 2010-04-27 | Wyman Theodore J Ted | Variable off-chip drive |
US7803693B2 (en) * | 2007-02-15 | 2010-09-28 | John Trezza | Bowed wafer hybridization compensation |
US7670874B2 (en) * | 2007-02-16 | 2010-03-02 | John Trezza | Plated pillar package formation |
US7763973B1 (en) * | 2007-04-05 | 2010-07-27 | Hewlett-Packard Development Company, L.P. | Integrated heat sink for a microchip |
US7850060B2 (en) * | 2007-04-05 | 2010-12-14 | John Trezza | Heat cycle-able connection |
US7748116B2 (en) * | 2007-04-05 | 2010-07-06 | John Trezza | Mobile binding in an electronic connection |
US7960210B2 (en) | 2007-04-23 | 2011-06-14 | Cufer Asset Ltd. L.L.C. | Ultra-thin chip packaging |
US20080261392A1 (en) * | 2007-04-23 | 2008-10-23 | John Trezza | Conductive via formation |
US20090091892A1 (en) * | 2007-09-26 | 2009-04-09 | Rohm Co., Ltd. | Semiconductor Device |
US11217472B2 (en) * | 2010-12-16 | 2022-01-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with multiple isolation layers |
US11804396B2 (en) * | 2010-11-18 | 2023-10-31 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11569117B2 (en) * | 2010-11-18 | 2023-01-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11610802B2 (en) * | 2010-11-18 | 2023-03-21 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes |
US11854857B1 (en) * | 2010-11-18 | 2023-12-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11862503B2 (en) * | 2010-11-18 | 2024-01-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11355380B2 (en) * | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | Methods for producing 3D semiconductor memory device and structure utilizing alignment marks |
US11521888B2 (en) * | 2010-11-18 | 2022-12-06 | Monolithic 3D Inc. | 3D semiconductor device and structure with high-k metal gate transistors |
US11164770B1 (en) * | 2010-11-18 | 2021-11-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
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US9449896B2 (en) | 2014-01-13 | 2016-09-20 | Stmicroelectronics Sa | Device comprising a three-dimensional integrated structure with simplified thermal dissipation, and corresponding fabrication method |
US10573627B2 (en) | 2015-01-09 | 2020-02-25 | Silicon Genesis Corporation | Three dimensional integrated circuit |
US20180175008A1 (en) | 2015-01-09 | 2018-06-21 | Silicon Genesis Corporation | Three dimensional integrated circuit |
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US10403435B2 (en) | 2017-12-15 | 2019-09-03 | Capacitor Sciences Incorporated | Edder compound and capacitor thereof |
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Also Published As
Publication number | Publication date |
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WO2005038910A2 (en) | 2005-04-28 |
US20050104027A1 (en) | 2005-05-19 |
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