WO2005034194A3 - Repairing damage to low-k dielectric materials using silylating agents - Google Patents

Repairing damage to low-k dielectric materials using silylating agents Download PDF

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Publication number
WO2005034194A3
WO2005034194A3 PCT/US2004/031995 US2004031995W WO2005034194A3 WO 2005034194 A3 WO2005034194 A3 WO 2005034194A3 US 2004031995 W US2004031995 W US 2004031995W WO 2005034194 A3 WO2005034194 A3 WO 2005034194A3
Authority
WO
WIPO (PCT)
Prior art keywords
subjected
films
organosilicate glass
film
etchant
Prior art date
Application number
PCT/US2004/031995
Other languages
French (fr)
Other versions
WO2005034194A2 (en
Inventor
Anil S Bhanap
Teresa A Ramos
Nancy Iwamoto
Roger Y Leung
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/940,686 external-priority patent/US8475666B2/en
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Priority to EP04817126A priority Critical patent/EP1676303A2/en
Priority to CN200480023744.XA priority patent/CN1839468B/en
Priority to JP2006534058A priority patent/JP2007508691A/en
Publication of WO2005034194A2 publication Critical patent/WO2005034194A2/en
Publication of WO2005034194A3 publication Critical patent/WO2005034194A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobocity of the organosilicate glass dielectric film.
PCT/US2004/031995 2003-10-08 2004-09-24 Repairing damage to low-k dielectric materials using silylating agents WO2005034194A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP04817126A EP1676303A2 (en) 2003-10-08 2004-09-24 Repairing damage to low-k dielectric materials using silylating agents
CN200480023744.XA CN1839468B (en) 2003-10-08 2004-09-24 Repairing damage to low-K dielectric materials using silylating agents
JP2006534058A JP2007508691A (en) 2003-10-08 2004-09-24 Repair of damage in low dielectric constant dielectric materials using silylating agents

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US51002403P 2003-10-08 2003-10-08
US60/510,024 2003-10-08
US10/940,686 US8475666B2 (en) 2004-09-15 2004-09-15 Method for making toughening agent materials
US10/940,686 2004-09-15

Publications (2)

Publication Number Publication Date
WO2005034194A2 WO2005034194A2 (en) 2005-04-14
WO2005034194A3 true WO2005034194A3 (en) 2005-09-15

Family

ID=34426157

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/031995 WO2005034194A2 (en) 2003-10-08 2004-09-24 Repairing damage to low-k dielectric materials using silylating agents

Country Status (3)

Country Link
JP (1) JP2007508691A (en)
CN (1) CN1839468B (en)
WO (1) WO2005034194A2 (en)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7709371B2 (en) 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
EP1588411A4 (en) 2003-01-25 2008-10-01 Honeywell Int Inc Repair and restoration of damaged dielectric materials and films
US8475666B2 (en) 2004-09-15 2013-07-02 Honeywell International Inc. Method for making toughening agent materials
SG141441A1 (en) * 2004-09-15 2008-04-28 Honeywell Int Inc Treating agent materials
JP4591032B2 (en) * 2004-10-15 2010-12-01 Ｊｓｒ株式会社 Surface hydrophobizing composition, surface hydrophobizing method, and semiconductor device manufacturing method
US9659769B1 (en) 2004-10-22 2017-05-23 Novellus Systems, Inc. Tensile dielectric films using UV curing
JP5019714B2 (en) * 2005-01-31 2012-09-05 大陽日酸株式会社 Damage recovery method for low dielectric constant films
US7678712B2 (en) * 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials
US8889233B1 (en) 2005-04-26 2014-11-18 Novellus Systems, Inc. Method for reducing stress in porous dielectric films
US8980769B1 (en) 2005-04-26 2015-03-17 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US20070054501A1 (en) * 2005-08-23 2007-03-08 Battelle Memorial Institute Process for modifying dielectric materials
JP5247999B2 (en) * 2005-09-29 2013-07-24 東京エレクトロン株式会社 Substrate processing method and computer-readable storage medium
TW200721311A (en) 2005-10-11 2007-06-01 Toshiba Kk Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device
DE602007000498D1 (en) 2006-04-11 2009-03-12 Shinetsu Chemical Co Silicon-containing, film-forming composition, silicon-containing film, silicon-containing, film-carrying substrate and structuring method
JP5178511B2 (en) * 2006-04-19 2013-04-10 大陽日酸株式会社 Insulation film damage recovery method
JP2008091600A (en) * 2006-10-02 2008-04-17 Sony Corp Method for manufacturing semiconductor device
JP4999419B2 (en) * 2006-10-12 2012-08-15 東京エレクトロン株式会社 Substrate processing method, substrate processing system, and computer-readable storage medium
US10037905B2 (en) 2009-11-12 2018-07-31 Novellus Systems, Inc. UV and reducing treatment for K recovery and surface clean in semiconductor processing
US8465991B2 (en) 2006-10-30 2013-06-18 Novellus Systems, Inc. Carbon containing low-k dielectric constant recovery using UV treatment
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
US20080206997A1 (en) * 2007-02-26 2008-08-28 Semiconductor Energy Laboratory Co., Ltd. Method for Manufacturing Insulating Film and Method for Manufacturing Semiconductor Device
JP4413947B2 (en) 2007-06-21 2010-02-10 株式会社東芝 Manufacturing method of semiconductor device
JP5119832B2 (en) 2007-09-27 2013-01-16 富士通株式会社 Interface roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device
JP2009094183A (en) 2007-10-05 2009-04-30 Nec Electronics Corp Method of manufacturing hydrophobic porous membrane
US9050623B1 (en) 2008-09-12 2015-06-09 Novellus Systems, Inc. Progressive UV cure
SG174296A1 (en) * 2009-03-10 2011-10-28 Air Liquide Cyclic amino compounds for low-k silylation
US20110214909A1 (en) * 2010-03-05 2011-09-08 International Business Machines Corporation Hydrophobic Silane Coating for Preventing Conductive Anodic Filament (CAF) Growth in Printed Circuit Boards
CN102856251A (en) * 2012-09-21 2013-01-02 复旦大学 Method for removing hydroxylation on surface of low dielectric constant medium
CN104143524A (en) * 2013-05-07 2014-11-12 中芯国际集成电路制造(上海)有限公司 Manufacturing method for semiconductor device
CN107345137A (en) * 2016-05-04 2017-11-14 Oci有限公司 The etching solution of particle appearance can be suppressed
US9847221B1 (en) 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
TWI766488B (en) * 2020-12-19 2022-06-01 逢甲大學 Organic polymer film and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03124048A (en) * 1989-10-06 1991-05-27 Fujitsu Ltd Manufacture of semiconductor device
US5576247A (en) * 1992-07-31 1996-11-19 Matsushita Electric Industrial Co., Ltd. Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture
US6479374B1 (en) * 1998-04-01 2002-11-12 Asahi Kasei Kabushiki Kaisha Method of manufacturing interconnection structural body
US6518205B1 (en) * 1998-07-07 2003-02-11 Alliedsignal Inc. Multifunctional reagents for the surface modification of nanoporous silica films

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135498A (en) * 1997-10-29 1999-05-21 Hitachi Ltd Manufacturing method and device for semiconductor device
JP3266195B2 (en) * 1999-03-23 2002-03-18 日本電気株式会社 Method for manufacturing semiconductor device
JP2001237200A (en) * 2000-02-24 2001-08-31 Hitachi Ltd Method of manufacturing semiconductor integrated circuit
JP2002353308A (en) * 2001-05-28 2002-12-06 Toshiba Corp Semiconductor device and its manufacturing method
CN1179613C (en) * 2001-09-20 2004-12-08 联华电子股份有限公司 Surface treatment method to improve adhesive force of organic low dielectric constant layer
JP3648480B2 (en) * 2001-12-26 2005-05-18 株式会社東芝 Semiconductor device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03124048A (en) * 1989-10-06 1991-05-27 Fujitsu Ltd Manufacture of semiconductor device
US5576247A (en) * 1992-07-31 1996-11-19 Matsushita Electric Industrial Co., Ltd. Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture
US6479374B1 (en) * 1998-04-01 2002-11-12 Asahi Kasei Kabushiki Kaisha Method of manufacturing interconnection structural body
US6518205B1 (en) * 1998-07-07 2003-02-11 Alliedsignal Inc. Multifunctional reagents for the surface modification of nanoporous silica films

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 015, no. 330 (E - 1103) 22 August 1991 (1991-08-22) *

Also Published As

Publication number Publication date
WO2005034194A2 (en) 2005-04-14
CN1839468B (en) 2010-11-24
JP2007508691A (en) 2007-04-05
CN1839468A (en) 2006-09-27

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