WO2005029655A3 - Epitaxial mode-confined vertical cavity surface emitting laser (vcsel) and method of manufacturing same - Google Patents

Epitaxial mode-confined vertical cavity surface emitting laser (vcsel) and method of manufacturing same Download PDF

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Publication number
WO2005029655A3
WO2005029655A3 PCT/US2004/030900 US2004030900W WO2005029655A3 WO 2005029655 A3 WO2005029655 A3 WO 2005029655A3 US 2004030900 W US2004030900 W US 2004030900W WO 2005029655 A3 WO2005029655 A3 WO 2005029655A3
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WO
WIPO (PCT)
Prior art keywords
mode
vcsel
optical
area
vertical cavity
Prior art date
Application number
PCT/US2004/030900
Other languages
French (fr)
Other versions
WO2005029655A2 (en
Inventor
Dennis G Deppe
Original Assignee
Nanosource Inc
Dennis G Deppe
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanosource Inc, Dennis G Deppe filed Critical Nanosource Inc
Publication of WO2005029655A2 publication Critical patent/WO2005029655A2/en
Publication of WO2005029655A3 publication Critical patent/WO2005029655A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction

Abstract

A VCSEL includes an intracavity epitaxial layer including a shallow mesa (150) that alters the optical mode of the vertical cavity, laterally confining the optical mode in an otherwise planar epitaxial cavity. The VCSEL has optical confinement and current confinement within nearly the same active area (120) and can operate with low threshold current, high efficiency, or high speed. A mode confining region (160) may be defined using lithography, eliminating external process variations such as composition or thickness variations from influencing the mode confining region's (160) size. The result is a highly uniform structure across a semiconductor wafer and from wafer to wafer. The optical and current confinement regions are self-aligned because the same steps are used to form both. Alternatively, the optical mode area is substantially different from the current injection area of the active material (120), but these area are concentric or nearly concentric.
PCT/US2004/030900 2003-09-18 2004-09-17 Epitaxial mode-confined vertical cavity surface emitting laser (vcsel) and method of manufacturing same WO2005029655A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US50429903P 2003-09-18 2003-09-18
US60/504,299 2003-09-18
US10/943,617 US20050063440A1 (en) 2003-09-18 2004-09-17 Epitaxial mode-confined vertical cavity surface emitting laser (VCSEL) and method of manufacturing same
US10/943,617 2004-09-17

Publications (2)

Publication Number Publication Date
WO2005029655A2 WO2005029655A2 (en) 2005-03-31
WO2005029655A3 true WO2005029655A3 (en) 2005-07-28

Family

ID=34316623

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/030900 WO2005029655A2 (en) 2003-09-18 2004-09-17 Epitaxial mode-confined vertical cavity surface emitting laser (vcsel) and method of manufacturing same

Country Status (2)

Country Link
US (1) US20050063440A1 (en)
WO (1) WO2005029655A2 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7140816B2 (en) * 2004-07-20 2006-11-28 H&S Tool, Inc. Multi-functional tube milling head
US7706692B2 (en) * 2004-09-29 2010-04-27 Finisar Corporation Consumer electronics with optical communication interface
US7548675B2 (en) * 2004-09-29 2009-06-16 Finisar Corporation Optical cables for consumer electronics
KR101015500B1 (en) * 2004-10-11 2011-02-24 삼성전자주식회사 High power laser device having tunnel junction and laser pumping unit for the laser device
EP1734591B1 (en) * 2005-06-16 2013-05-22 STMicroelectronics S.r.l. Optical radiation emitting device and method for manufacturing this device
US7729618B2 (en) * 2005-08-30 2010-06-01 Finisar Corporation Optical networks for consumer electronics
US7860398B2 (en) * 2005-09-15 2010-12-28 Finisar Corporation Laser drivers for closed path optical cables
US7712976B2 (en) * 2006-04-10 2010-05-11 Finisar Corporation Active optical cable with integrated retiming
US7876989B2 (en) * 2006-04-10 2011-01-25 Finisar Corporation Active optical cable with integrated power
US8083417B2 (en) 2006-04-10 2011-12-27 Finisar Corporation Active optical cable electrical adaptor
US7778510B2 (en) 2006-04-10 2010-08-17 Finisar Corporation Active optical cable electrical connector
US8769171B2 (en) * 2007-04-06 2014-07-01 Finisar Corporation Electrical device with electrical interface that is compatible with integrated optical cable receptacle
US8244124B2 (en) 2007-04-30 2012-08-14 Finisar Corporation Eye safety mechanism for use in optical cable with electrical interfaces
JP5167860B2 (en) * 2008-02-26 2013-03-21 住友電気工業株式会社 Surface emitting semiconductor laser and method for fabricating surface emitting laser
JP5322800B2 (en) * 2009-06-18 2013-10-23 キヤノン株式会社 Vertical cavity surface emitting laser
US8290014B2 (en) * 2010-03-11 2012-10-16 Junesand Carl Active photonic device
US9118162B2 (en) 2011-01-14 2015-08-25 University Of Central Florida Research Foundation, Inc. Composite semiconductor light source pumped by a spontaneous light emitter
US8774246B1 (en) 2011-01-14 2014-07-08 University Of Central Florida Research Foundation, Inc. Semiconductor light sources including selective diffusion for optical and electrical confinement
JP5717485B2 (en) * 2011-03-16 2015-05-13 キヤノン株式会社 Surface emitting laser, surface emitting laser array, and image forming apparatus
US9705283B1 (en) 2014-05-20 2017-07-11 University Of Central Florida Research Foundation, Inc. Diffused channel semiconductor light sources
US10033156B2 (en) 2016-07-13 2018-07-24 University Of Central Florida Research Foundation, Inc. Low resistance vertical cavity light source with PNPN blocking
US10483719B2 (en) 2016-07-13 2019-11-19 University Of Central Florida Research Foundation, Inc. Semiconductor devices with depleted heterojunction current blocking regions
CN109891692B (en) 2016-09-28 2021-09-10 菲尼萨公司 Implant regrowth VCSEL and VCSEL array with heterogeneous combination of different VCSEL types
US20190252858A1 (en) * 2018-02-12 2019-08-15 Oepic Semiconductors, Inc. Epitaxial planarization of tunnel junction and alike vcsel array and method therefor
CN112615255B (en) * 2019-10-04 2022-03-25 全新光电科技股份有限公司 Vertical cavity surface laser transmitter (VCSEL) with tunneling junction layer
US11616343B2 (en) * 2020-05-21 2023-03-28 Lumentum Operations Llc Vertical-cavity surface-emitting laser with a tunnel junction
DE102022109446A1 (en) 2022-04-19 2023-10-19 Trumpf Photonic Components Gmbh Method for producing a semiconductor component and such a semiconductor component

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5568499A (en) * 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
US5960024A (en) * 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6324192B1 (en) * 1995-09-29 2001-11-27 Coretek, Inc. Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same
US20020080836A1 (en) * 2000-12-23 2002-06-27 Applied Optoelectronics, Inc. Vertical-cavity surface-emitting laser with metal mirror and method of fabrication of same
US6493373B1 (en) * 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6515305B2 (en) * 2000-09-18 2003-02-04 Regents Of The University Of Minnesota Vertical cavity surface emitting laser with single mode confinement
US6542527B1 (en) * 1998-08-27 2003-04-01 Regents Of The University Of Minnesota Vertical cavity surface emitting laser

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5493577A (en) * 1994-12-21 1996-02-20 Sandia Corporation Efficient semiconductor light-emitting device and method
US5903590A (en) * 1996-05-20 1999-05-11 Sandia Corporation Vertical-cavity surface-emitting laser device
US6169756B1 (en) * 1997-12-23 2001-01-02 Lucent Technologies Inc. Vertical cavity surface-emitting laser with optical guide and current aperture
US6075804A (en) * 1998-01-28 2000-06-13 Picolight Incorporated Semiconductor device having an oxide defined aperture
US6901099B1 (en) * 2001-06-29 2005-05-31 Optical Communication Products, Inc. Antiguide single mode vertical cavity laser
US6680963B2 (en) * 2001-07-24 2004-01-20 Lux Net Corporation Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement
US6534331B2 (en) * 2001-07-24 2003-03-18 Luxnet Corporation Method for making a vertical-cavity surface emitting laser with improved current confinement
US6553053B2 (en) * 2001-07-25 2003-04-22 Luxnet Corporation Vertical cavity surface emitting laser having improved light output function

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5568499A (en) * 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
US6324192B1 (en) * 1995-09-29 2001-11-27 Coretek, Inc. Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same
US5960024A (en) * 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6493373B1 (en) * 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6542527B1 (en) * 1998-08-27 2003-04-01 Regents Of The University Of Minnesota Vertical cavity surface emitting laser
US6515305B2 (en) * 2000-09-18 2003-02-04 Regents Of The University Of Minnesota Vertical cavity surface emitting laser with single mode confinement
US20020080836A1 (en) * 2000-12-23 2002-06-27 Applied Optoelectronics, Inc. Vertical-cavity surface-emitting laser with metal mirror and method of fabrication of same

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US20050063440A1 (en) 2005-03-24
WO2005029655A2 (en) 2005-03-31

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